JP3320401B2 - Method for manufacturing semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technique for manufacturing a semiconductor wafer and a semiconductor device, and more particularly to a layout design technique for a mask pattern serving as an original of a predetermined pattern constituting a semiconductor device.

[0002]

2. Description of the Related Art Conventionally, in a normal mask, a mask pattern formed on a mask substrate is the same as a pattern that a designer intends to form on a semiconductor wafer.

Therefore, when creating mask pattern data, the geometric rules and electrical rules of the pattern to be formed on the semiconductor wafer are satisfied with respect to the data of the mask pattern formed on the mask substrate. It is checked whether or not the mask pattern is correct, and based on the result of the check, the mask pattern data is corrected manually or by a computer, and the mask pattern data suitable for the design is created.

The layout design technique is described in, for example, Sangyo Tosho, published in 1984, "Introduction to MOS LSI Design", pp. 212-214.

[0005]

In recent years, in semiconductor devices, the dimensions of elements, wirings, and the like formed on a semiconductor wafer have tended to be reduced.

Accordingly, there is a demand for improving the resolution of a pattern transferred onto a semiconductor wafer.

As a technique for improving the resolution of a pattern transferred onto a semiconductor wafer, for example, there is a phase shift method.

The phase shift method is a technique for improving the resolution by giving a phase difference to light transmitted through a phase shift mask and utilizing interference between transmitted lights.

In the case of the phase shift method, a pattern formed on a mask substrate and a pattern to be formed on a semiconductor wafer may be partially different. This will be described with reference to FIGS.

FIG. 37 shows a pattern 50 to be formed on a semiconductor wafer. The pattern 50 includes patterns 50a to 50d.
The dimension between a and 50d and the dimension between patterns 50b and 50d are, for example, the minimum dimension of about 0.35 μm that cannot be resolved by i-line.

Now, as shown in FIG. 38, a pattern 51 (51a to 51d) formed on a mask substrate is
It is assumed that the pattern has the same shape as the pattern 50 shown in FIG. 37 to be formed on the semiconductor wafer.

Then, as shown in FIG. 39, it is assumed that phase shift pattern films 52a and 52b are arranged on the patterns 51a and 51c of the pattern 51, respectively.

In this case, the phase shift pattern film 52a,
Since the light transmitted through the patterns 51a and 51c on which the 52b is disposed and the light transmitted through the patterns 51b and 51d on which the phase shift pattern films 52a and 52b are not disposed have opposite phases, no problem occurs.

However, since the light transmitted through the pattern 51b and the light transmitted through the pattern 51d have the same phase, the pattern 51b and the pattern 51d are left as they are.
Unnecessary patterns are transferred between the steps. This problem cannot be avoided only by changing the arrangement of the phase shift pattern films 52a and 52b.

Therefore, in this case, the pattern 51 formed on the mask substrate is changed as follows, for example.

That is, as shown in FIG. 40, these patterns 51b, 51d are interposed between the patterns 51b, 51d.
An auxiliary pattern 53a that connects the
As shown in the figure, three wiring patterns 5 running parallel to each other
A pattern 54 including 4a to 54c is formed.

Then, as shown in FIG.
4, the phase shift pattern films 52a and 52b are arranged on the patterns 54a and 54c, respectively.
On the pattern 54b, the auxiliary pattern 53a (FIG. 40)
(See FIG. 3) is disposed at the position where the phase shift pattern film 52c is disposed.

With this configuration, a phase difference is generated between the region having the phase shift pattern film 52c and the region not having the phase shift pattern film 52c in the light transmitted through the pattern 54b.
The pattern 50 shown in FIG. 37 can be transferred.

As described above, in the case of the phase shift mask, the pattern 54 formed on the mask substrate is partially different from the pattern 50 to be formed on the semiconductor wafer.

By the way, as described above, conventionally, on the assumption that the pattern formed on the mask substrate and the pattern to be formed on the semiconductor wafer are equal, the data of the pattern formed on the mask substrate is On the other hand, a check is performed to determine whether the geometrical rules, electrical rules, and the like of the pattern to be formed on the semiconductor wafer are satisfied.

However, if the conventional check method is applied to data creation of a mask pattern of a phase shift mask, for example, it is determined that a short circuit occurs even though the pattern 54b on the mask substrate shown in FIG. 42 is correct. Will be done. This is because this pattern must be separated on the semiconductor wafer.

That is, conventionally, when a pattern formed on a mask substrate and a pattern to be formed on a semiconductor wafer are different from each other, for example, as in a phase shift mask, a check is performed when creating data of the mask pattern. There was a problem that could not be done.

The present invention has been made in view of the above problems, and an object of the present invention is to provide a technique capable of inspecting the quality of pattern data of a phase shift mask.

The above and other objects and novel features of the present invention will become apparent from the description of the specification and the accompanying drawings.

[0025]

SUMMARY OF THE INVENTION Among the inventions disclosed in the present application, the outline of a representative one will be briefly described.
It is as follows.

That is, the present invention provides a mask manufactured based on actual pattern data corresponding to a pattern formed on a semiconductor wafer, auxiliary pattern data stored separately from the actual pattern data, and phase shift pattern data. A pattern is formed on a semiconductor wafer by a substrate.

Further, the present invention provides a step of laying out actual pattern data formed on a semiconductor wafer, a step of inspecting the actual pattern data, and a step different from the actual pattern data. A step of forming a pattern on a semiconductor wafer using a phase shift mask manufactured based on the auxiliary pattern data and the phase shift pattern data.

The present invention also provides a step of laying out actual pattern data, a step of inspecting the actual pattern data, a step of laying out auxiliary pattern data different from the actual pattern data, A step of laying out data, and a step of forming a pattern on a semiconductor wafer using a phase shift mask manufactured based on the actual pattern data, the auxiliary pattern data, and the phase shift pattern data. .

Further, according to the present invention, a step of laying out actual pattern data and storing the actual pattern data in the first means, and a step of laying out auxiliary pattern data, wherein the second means is different from the first means. Storing the phase shift pattern data, the step of laying out the phase shift pattern data, the actual pattern data, the auxiliary pattern data, and a phase shift mask manufactured based on the phase shift pattern data. Forming a pattern.

Further, the present invention provides a step of inspecting actual pattern data formed on a mask, and a step of synthesizing the actual pattern data, auxiliary pattern data, and phase shift pattern data to generate expected pattern data. Comparing the expected pattern data with the actual pattern data; and forming a pattern on a semiconductor wafer using a phase shift mask manufactured based on the actual pattern data, the auxiliary pattern data, and the phase shift pattern data. And a process.

According to the first aspect, the pattern data of the phase shift mask is divided into an actual pattern data layer, an auxiliary pattern data layer, and a phase shift pattern data layer, and only the actual pattern is checked to thereby obtain a conventional pattern. Using the inspection method as it is, the quality of the actual pattern created by the layout design of the pattern of the phase shift mask can be determined.

Then, a combined pattern of the actual pattern, the auxiliary pattern, and the phase shift pattern after the check is created, and an expected pattern assumed to be formed on a semiconductor wafer or the like is created by the combined pattern. By comparing the expected pattern with the actual pattern after the inspection, it is possible to determine the quality of the auxiliary pattern and the phase shift pattern of the phase shift mask.

According to the second aspect, for example, the pattern data in the phase shift pattern data layer is further separated by a difference in graphic operation processing, so that the separated data layers can be processed independently. So you can
Data processing can be facilitated.

[0034]

(Embodiment 1) FIG. 1 is a flowchart for explaining a mask pattern data generating method according to an embodiment of the present invention, and FIG. 2 is a layout layer during the pattern data generating step. FIG. 3 is a plan view of an essential part showing an example of a pattern to be transferred onto a semiconductor wafer, and FIG. 4 is a view for explaining a data storage state of a layout layer during a pattern data creation process. FIGS. 5 and 6 are explanatory diagrams schematically showing examples of respective pattern data stored in the pattern data layer, and FIGS. 7 to 9 and 15 are expected patterns when the pattern of FIG. 3 is formed. FIG. 10 is an explanatory view for explaining a comparison process between a mask pattern and an actual pattern, FIG. 10 is a plan view of a main part of a mask pattern formed on a mask substrate, FIG. 11 is a sectional view taken along line AA of FIG. FIG. 16 is an explanatory diagram for explaining the blow-don process, FIGS. 13 and 17 are plan views of a main part of a mask pattern and a phase shift pattern for forming the pattern of FIG. 3, and FIG. 14 is a line BB of FIG. Cross section of the
FIG. 18 is a sectional view taken along line CC of FIG.

The mask pattern data creating method according to the first embodiment is, for example, a phase shift mask pattern data creating method. Note that the mask also includes a reticle.

FIG. 2 shows the layout layer 1 during the pattern data creation step of the phase shift mask according to the first embodiment.
3 shows a data storage state of the data.

As shown in FIG. 2, the layout layer 1 is divided into a plurality of pattern data layers 2 to 5.

At this stage, the pattern data layer 2
1 to 5 are data layers for manufacturing one phase shift mask.

For example, the pattern data layer 3 is divided into pattern data layers 3a and 3b as required for data processing. Also, for example, the pattern data layer 4 is separated into pattern data layers 4a and 4b as required for data processing.

In the first embodiment from such a state, for example, the following is performed. In the following description, an example of transferring the wiring patterns 6a to 6d shown in FIG. 3 onto a semiconductor wafer (not shown) will be described with reference to FIG. The steps will be described with reference to FIGS.

First, in the first embodiment, as shown in FIG. 4, the pattern data layers 2, 3a, 3b, 4a,
4b and 5 are laid out separately for the actual pattern data layer 7, the auxiliary pattern data layer 8, and the phase shift pattern layer 9 (101).

The actual pattern data layer 7 is a data layer in which data of an actual pattern having the same shape as the pattern to be formed on the semiconductor wafer is stored.

The auxiliary pattern data layer 8 is a data layer which is not transferred to the semiconductor wafer, but stores data of an auxiliary pattern necessary for forming a pattern on the semiconductor wafer.

Further, the phase shift pattern data layer 9
Is a data layer in which data of a phase shift pattern for causing a phase difference in transmitted light is stored.

For example, the wiring patterns 6a to 6 shown in FIG.
In the case of forming d, for example, data of the real pattern F1, the auxiliary pattern H1, and the phase shift pattern S as shown in FIG. 5 are stored in the real pattern data layer 7a, the auxiliary pattern data layer 8a, and the phase shift pattern data layer 9a. It is desirable that each is stored.

In the first embodiment, for example, as shown in FIGS. 4 and 6, the phase shift pattern data layer 9a is composed of the first and second phase shift pattern data layers 9a.
a1 and 9a2.

The reason for this is that the first phase shift pattern S1 and the second phase shift pattern S2 shown in FIG. The Blowdon amount is a difference between a mask dimension and a drawing dimension, and is an amount of enlargement or reduction of a pattern on data.

That is, since the first and second phase shift patterns S1 and S2 are different from each other in the amount of enlargement or the manner of enlargement, it is easier to process if the data layers are divided and can be processed independently. It is.

For example, the entire first phase shift pattern S1 may be isotropically enlarged. However, the second phase shift pattern S2 may have different enlarged dimension amounts between the horizontal direction and the vertical direction in FIG.

This corresponds to the second phase shift pattern S shown in FIG.
2 is set in anticipation of the margin for alignment with the mask pattern, while the vertical dimension is shown in FIG.
Is set based on the dimension between the patterns 6b and 6d shown in FIG.

However, Broaddon lays out the actual pattern extracted online from the actual pattern data layer 7a as the first phase shift pattern S1, creates a correct phase shift pattern S, and then stores the data of the correct phase shift pattern S. It is better to apply it when creating drawing data of a phase shift pattern based on. This is because waste can be reduced.

Such an actual pattern data layer 7, auxiliary pattern data layer 8, and phase shift pattern data layer 9
Can be processed independently of each other, and can be combined.

Then, the synthesized pattern and the like are displayed on a display (not shown) or the like, and are visible.

Subsequently, it is checked whether or not the geometric rules and the electrical rules are satisfied only for the actual pattern data of the actual pattern data layer 7 in the same manner as in the conventional method (102). ).

And if it is not satisfied,
The correction of the data of the actual pattern and the inspection are repeated until it is satisfied.

Incidentally, as a result of the check, an inappropriate part is displayed on the above-mentioned display.

When it is necessary to correct the data of the auxiliary pattern and the phase shift pattern due to the correction of the actual pattern, such correction is also performed.

On the other hand, if the check passes, the data of the correct actual pattern obtained through the check and correction steps, the data of the auxiliary pattern, and the data of the phase shift pattern are combined, and the combined pattern is obtained. Based on this data, data of an expected pattern to be transferred onto a semiconductor wafer is created (103).

Subsequently, the data of the expected pattern is compared with the data of the correct actual pattern obtained through the inspection and correction steps (104).

Here, when the data of the expected pattern does not match the data of the actual pattern, the correction of the pattern data and the check are repeated until the data match.

For example, it is assumed that the data of the actual pattern F1, the auxiliary pattern H1, and the phase shift pattern S shown in FIG. 7 have been created. That is, there is no second phase shift pattern that should be originally present. In this case, the following data processing is performed.

First, for example, the data of the composite pattern SY4 is created from the data of the composite pattern SY2 of the actual pattern F1 and the auxiliary pattern H1, and the data of the composite pattern SY3 of the first phase shift pattern S1 and the second phase shift pattern. I do.

Subsequently, based on the data of the composite pattern SY4, data of the expected pattern EX1 as shown in FIG. 9 is created, and the data of the expected pattern EX1 and the data of the actual pattern F1 are compared.

In this case, since the data of the expected pattern EX1 does not match the data of the actual pattern F1, it can be determined that one or both of the auxiliary pattern H1 and the phase shift pattern S have an error. Here, since the second phase shift pattern has an error, it is corrected.

Further, as shown in FIG. 8, when there is no auxiliary pattern, the definition of the phase shift method is violated, so that neither the data of the synthesized pattern of the actual pattern, the auxiliary pattern nor the phase shifter pattern nor the data of the expected pattern is generated. .

Here, the data of the auxiliary pattern and the first phase shift pattern are erroneous and are corrected.

On the other hand, when the data of the expected pattern and the data of the actual pattern match, the drawing data of the mask pattern is created based on the data of the composite pattern of the actual pattern and the auxiliary pattern, and the first and second patterns are created. The drawing data of the phase shift pattern is created based on the composite pattern of the phase shift pattern (105).

Then, a mask pattern and a phase shift pattern are formed on the mask substrate by the photolithography technique using the drawing data to manufacture a phase shift mask (106).

For example, it is assumed that the data of the actual pattern F1, the auxiliary pattern H1, and the phase shift pattern S shown in FIG. 9 have been created. That is, the desired state shown in FIG. In this case, the following data processing is performed.

First, the actual pattern F1 and the auxiliary pattern H1
The data of the composite pattern SY6 is created from the data of the composite pattern SY2 of the first phase shift pattern S1 and the data of the composite pattern SY5 of the second phase shift pattern S2.

Subsequently, the data of the expected pattern EX2 created based on the data of the composite pattern SY6 and the data of the actual pattern F1 are compared.

In this case, since the data of the expected pattern EX2 matches the data of the actual pattern F1, it can be determined that the data of the auxiliary pattern H1 and the data of the phase shift pattern S are correct.

Therefore, the actual pattern F1 and the auxiliary pattern H
The drawing data of the mask pattern is created based on the data of the composite pattern SY2 with the mask pattern 1.

Then, based on the drawing data of the created mask pattern, a mask pattern 10 as shown in FIGS. 10 and 11 is formed on the mask substrate 11 by a photolithography technique or the like.

The mask pattern 10 is a pattern for forming a light-shielding area 10 a and a transmissive area 10 b indicated by oblique lines on the mask substrate 11. The light shielding region 10a is made of, for example, chrome (Cr). The mask substrate 11 is made of, for example, quartz or the like.

The first and second phase shift patterns S1
, S2, the drawing data of the phase shift pattern is created based on the data of the composite pattern SY5.

When drawing data of a phase shift pattern is prepared, as shown in FIG. 12, different amounts of blowdon are applied to the data of the first and second phase shift patterns S1 and S2, respectively. The pattern data is synthesized, and the drawing data of the phase shift pattern is created based on the data of the synthesized pattern SY7.

Then, based on the drawing data of the generated phase shift pattern, a phase shift pattern film 12a as shown in FIGS. 13 and 14 is formed at a predetermined position on the mask substrate 11 by photolithography or the like. Then, the phase shift mask 13 is manufactured.

It should be noted that the phase shift pattern film 12a can be disposed on the mask substrate 11 with the presence or absence thereof reversed.

Also, for example, the actual pattern F1 shown in FIG.
, The data of the auxiliary pattern H1 and the data of the phase shift pattern S are also created by performing the same processing as above.
The data of the expected pattern EX2 matches the data of the actual pattern F1.

Therefore, also in this case, the drawing data of the mask pattern is created based on the data of the composite pattern SY2 of the actual pattern F1 and the auxiliary pattern H1.

The first and second phase shift patterns S1
, S2, the drawing data of the phase shift pattern is created based on the data of the composite pattern SY8.

In this case as well, when drawing data of the phase shift pattern is created, as shown in FIG. 16, the data of the first and second phase shift patterns S1 and S2 are applied with different amounts of blown. These pattern data are synthesized, and drawing data of a phase shift pattern is created based on the data of the synthesized pattern SY9.

Then, based on the created mask pattern drawing data and phase shift pattern drawing data, the mask pattern 10 and the phase shift pattern film 12b as shown in FIGS. Formed on the substrate 11,
The phase shift mask 13 is manufactured.

It is also possible to invert the presence / absence of the phase shift pattern film 12b and arrange it on the mask substrate 11.

As described above, according to the first embodiment, the following effects can be obtained. (1) Separating the layout layer 1 of the phase shift mask into the actual pattern data layer 7, the auxiliary pattern data layer 8, and the phase shift pattern data layer 9, and checking the quality of only the actual pattern data to obtain the phase shift The quality of the data of the actual pattern in the pattern data of the mask can be determined by using the conventional inspection method as it is.

Then, data of a composite pattern of the actual pattern, the auxiliary pattern, and the phase shift pattern after the check is created, and the data of the predicted pattern expected to be formed on the semiconductor wafer by the composite pattern. By comparing the data of the expected pattern with the data of the actual pattern after the inspection, it is possible to determine the quality of the data of the auxiliary pattern and the phase shift pattern of the phase shift mask.

Therefore, it is possible to inspect the quality of the pattern data of the phase shift mask. (2) According to the above (1), the reliability of the pattern data of the phase shift mask 13 can be improved. (3). By further separating the pattern data in the pattern data layer according to differences in graphic operation processing such as Blowdon, the separated data can be processed independently, thus facilitating data processing. And automatic processing by a computer or the like can be promoted.

(Embodiment 2) FIG. 19 is a plan view of a main portion of a pattern to be transferred onto a semiconductor wafer for explaining a mask pattern data generating method according to another embodiment of the present invention. 24 to FIG. 24 are explanatory diagrams for explaining a comparison process between an expected pattern and an actual pattern when the pattern of FIG. 19 is formed, and FIG. 25 is a diagram showing a mask pattern and a phase shift pattern for forming the pattern of FIG. FIG. 26 is a sectional view taken along line DD of FIG.

In the second embodiment, for example, in the case where the wiring patterns 6e and 6f shown in FIG. 19 are transferred onto a semiconductor wafer, a method of generating mask pattern data will be described with reference to FIGS. This will be described with reference to FIG.

However, in the second embodiment, the wiring patterns 6e and 6f are, for example, patterns having a line width of about 1 μm which can be fully imaged by i-line.
The interval of f is, for example, about 0.35 μm.

In this case, since there is no need to provide an auxiliary pattern, an example in which there is no auxiliary pattern will be described in the second embodiment.

In the second embodiment, since steps 101 to 102 in FIG. 1 are the same as those in the first embodiment, the description will be started from step 103 in FIG.

For example, it is assumed that data of the actual pattern F2 and the phase shift pattern S3 shown in FIG. 20 have been created.
That is, there is a case where the phase shift pattern S3 is missing. In this case, the following data processing is performed.

First, in the same manner as in the first embodiment, the expected pattern EX created based on the data of the composite pattern SY10 of the actual pattern F2 and the phase shift pattern S3.
3 and the data of the real pattern F2 are compared (103, 104).

In this case, since the data of the expected pattern EX3 does not match the data of the actual pattern F2, it can be determined that there is an error in the phase shift pattern S3. Therefore,
Here, the phase shift pattern S3 is corrected.

Further, for example, the actual pattern F2 shown in FIG.
Assume that data of the phase shift pattern S4 has been created. That is, this is the case where the phase shift pattern S4 exactly the same as the actual pattern F2 is created.

In this case, the expected pattern is not generated because it is contrary to the definition of the phase shift method. Further, as shown in FIG. 22, even when there is no phase shift pattern, the expected pattern is not generated because it is contrary to the definition of the phase shift method. In these cases, the phase shift pattern is modified.

On the other hand, when the data of the actual pattern F2 and the phase shift pattern S5 shown in FIG. 23 or FIG. 24 are created, the data of the expected pattern EX4 and the data of the actual pattern F2 match. It can be determined that the shift pattern S5 is correct (103, 1
04).

Therefore, in this case, the drawing data of the mask pattern is created based on the data of the actual pattern F2, and the drawing data of the phase shift pattern is created based on the data of the phase shift pattern S5 (10).
5).

When the drawing data of the phase shift pattern is created, a predetermined amount of broaddon is applied to the data of the phase shift pattern S5, as in the first embodiment.

Then, based on the created mask pattern drawing data and phase shift pattern drawing data, the mask pattern 10 and the phase shift pattern film 12c as shown in FIGS. 25 and 26 are masked by photolithography or the like. Formed on the substrate 11,
The phase shift mask 13 is manufactured (106).

Incidentally, it is also possible to dispose the phase shift pattern film 12c on the mask substrate 11 by inverting the existence thereof.

As described above, according to the second embodiment, the same effects as in the first embodiment can be obtained.

(Embodiment 3) FIG. 27 is a plan view of a main portion of a pattern to be transferred onto a semiconductor wafer for explaining a method of creating mask pattern data according to another embodiment of the present invention. 30 to 30 are explanatory diagrams for explaining a comparison process between an expected pattern and an actual pattern when forming the pattern of FIG. 27, and FIGS. 31 and 34 are mask patterns and phase shifts for forming the pattern of FIG. FIG. 32 is a sectional view taken along line EE of FIG. 31, and FIG. 35 is a sectional view taken along line KK of FIG.

In the third embodiment, for example, in the case where the connection hole pattern 14 shown in FIG. 27 is transferred onto a semiconductor wafer, the method of generating mask pattern data will be described with reference to FIGS. This will be described with reference to 35.

In the third embodiment, since steps 101 to 102 in FIG. 1 are the same as those in the first embodiment, the description will be started from step 103 in FIG.

For example, it is assumed that the data of the actual pattern F3, the auxiliary pattern H2, and the phase shift pattern S6 shown in FIG. 28 have been created. That is, the phase shift pattern S6
This is the case when there is a lack in a part of.

In this case, an expected pattern is not generated because it is contrary to the definition of the phase shift method. Also, for example, FIG.
As shown in FIG. 9, even when there is no phase shift pattern, the definition of the phase shift method is violated, so that no expected pattern is generated. Therefore, in these cases, the phase shift pattern is corrected.

On the other hand, for example, the actual pattern F3 shown in FIG.
Assume that data of the auxiliary pattern H2 and the phase shift pattern S6 have been created.

In this case, when the data of the expected pattern EX5 is compared with the data of the actual pattern F2, they match, so that the auxiliary pattern H2 and the phase shift patterns S6, S6,
S7 can be determined to be correct (103, 104).

Therefore, in this case, the drawing data of the mask pattern is created based on the data of the combined pattern of the actual pattern F3 and the auxiliary pattern H2, and the drawing of the phase shift pattern is performed based on the data of the phase shift pattern S7. Data is created (105).

When the drawing data of the phase shift pattern is created, a predetermined amount of broaddon is applied to the data of the phase shift pattern S7, as in the first embodiment.

Based on the drawing data of the created mask pattern and the drawing data of the phase shift pattern, the mask pattern 10 and the phase shift pattern film 12d as shown in FIGS. 31 and 32 are masked by photolithography or the like. Formed on the substrate 11,
The phase shift mask 13 is manufactured (106).

It is also possible to invert the presence or absence of the phase shift pattern film 12d and arrange it on the mask substrate 11.

Also, for example, the actual pattern F3 shown in FIG.
When the data of the auxiliary pattern H2 and the data of the phase shift pattern S8 are created, the data of the expected pattern EX5 and the data of the actual pattern F2 are identical (103, 104).

Therefore, in this case as well, the drawing data of the mask pattern is created based on the data of the composite pattern of the actual pattern F3 and the auxiliary pattern H2, and the drawing of the phase shift pattern is performed based on the data of the phase shift pattern S8. Data is created (105).

Based on the mask pattern drawing data and the phase shift pattern drawing data, the mask pattern 1 shown in FIGS.
0 and the phase shift pattern film 12e are formed on the mask substrate 11 by a photolithography technique or the like, and the phase shift mask 13 is manufactured (106).

It is also possible to invert the presence / absence of the phase shift pattern film 12 e and arrange it on the mask substrate 11.

As described above, also in the third embodiment, the same effect as in the first embodiment can be obtained.

Although the invention made by the inventor has been specifically described based on the embodiments, the present invention is not limited to the first to third embodiments, and the present invention is not limited thereto. It goes without saying that various changes can be made.

For example, in the first to third embodiments,
If the comparison between the expected pattern data and the actual pattern data indicates that they do not match, the data of the auxiliary pattern or the phase shift pattern is corrected, and then the data of the expected pattern is created again. Although the case of comparing and inspecting the data of the actual pattern and the data of the actual pattern has been described, the present invention is not limited to this, and various changes can be made.

That is, as shown in FIG. 36, when it is determined that the data of the expected pattern does not match the data of the actual pattern, it is determined whether to correct the data of the actual pattern (104a).

If it is necessary to correct the data of the actual pattern, the data of the actual pattern is corrected, and the process returns to the step 101.

On the other hand, when it is not necessary to correct the data of the actual pattern, the data of the auxiliary pattern or the phase shift pattern is corrected, and the process returns to the step 103.

In this case, it is possible to cope with the case where the actual pattern data is changed after the comparison inspection between the expected pattern data and the actual pattern data is performed.

Further, for example, the following may be performed. That is, when it is determined that the data of the expected pattern does not match the data of the actual pattern, only the data of the actual pattern is inspected after correcting the data of the auxiliary pattern or the phase shift pattern.

When an error is found in the data of the actual pattern, it is corrected. On the other hand, if there is no error in the actual pattern data, an expected pattern is created again, and the expected pattern data and the actual pattern data are compared and inspected.

In this case, in the correction after the comparison inspection between the data of the expected pattern and the data of the actual pattern, even if the actual pattern is changed by mistake, for example, the error can be detected. Can be further improved.

[0130]

Advantageous effects obtained by typical ones of the inventions disclosed in the present application will be briefly described.
It is as follows. (1) According to the present invention described above, the pattern data of the phase shift mask is divided into the actual pattern data layer, the auxiliary pattern data layer, and the phase shift pattern data layer, and only the actual pattern is checked, whereby the phase shift mask is obtained. During the creation of the pattern data, the quality of the actual pattern in the pattern data of the phase shift mask can be determined using the conventional inspection method as it is.

Then, a combined pattern of the actual pattern, the auxiliary pattern, and the phase shift pattern after the check is created, and an expected pattern assumed to be formed on a semiconductor wafer or the like is created by the combined pattern. By comparing the expected pattern with the actual pattern after the inspection, it is possible to determine the quality of the auxiliary pattern and the phase shift pattern of the phase shift mask.

That is, it is possible to inspect the quality of the pattern data of the phase shift mask. Therefore, it is possible to improve the reliability of the pattern data of the phase shift mask. (2) According to the present invention described above, for example, by further separating the pattern data in the phase shift pattern data layer by a difference in graphic operation processing, the separated data layer can be processed independently. Therefore, data processing can be facilitated, and automatic processing by a computer or the like can be promoted.

[Brief description of the drawings]

FIG. 1 is a flowchart illustrating a mask pattern data creation method according to an embodiment of the present invention.

FIG. 2 is an explanatory diagram illustrating a data storage state of a layout layer during the pattern data creation step.

FIG. 3 is a main part plan view showing an example of a pattern to be transferred onto a semiconductor wafer.

FIG. 4 is an explanatory diagram illustrating a data storage state of a layout layer during the pattern data creation step.

FIG. 5 is an explanatory diagram schematically showing an example of each pattern stored in a pattern data layer.

FIG. 6 is an explanatory diagram schematically showing an example of each pattern stored in a pattern data layer.

FIG. 7 is an explanatory diagram illustrating a comparison process between an expected pattern and an actual pattern when forming the pattern of FIG. 3;

FIG. 8 is an explanatory diagram illustrating a comparison process between an expected pattern and an actual pattern when the pattern of FIG. 3 is formed.

FIG. 9 is an explanatory diagram illustrating a comparison process between an expected pattern and an actual pattern when the pattern of FIG. 3 is formed.

FIG. 10 is a plan view of a main part of a mask pattern formed on a mask substrate.

FIG. 11 is a sectional view taken along line AA of FIG. 10;

FIG. 12 is an explanatory diagram for explaining a blowdon process.

FIG. 13 is a plan view of a main part of a mask pattern and a phase shift pattern formed on a mask substrate.

14 is a sectional view taken along line BB of FIG.

FIG. 15 is an explanatory diagram illustrating a comparison process between an expected pattern and an actual pattern when forming the pattern of FIG. 3;

FIG. 16 is an explanatory diagram for explaining a blowdon process.

FIG. 17 is a plan view of a principal part of a mask pattern and a phase shift pattern formed on a mask substrate.

18 is a sectional view taken along line CC of FIG.

FIG. 19 is a plan view of a main portion of a pattern to be transferred onto a semiconductor wafer for describing a method of creating pattern data of a mask according to another embodiment of the present invention.

20 is an explanatory diagram illustrating a comparison process between an expected pattern and an actual pattern when forming the data of the pattern in FIG. 19;

FIG. 21 is an explanatory diagram illustrating a comparison process between an expected pattern and an actual pattern when forming the data of the pattern in FIG. 19;

FIG. 22 is an explanatory diagram illustrating a comparison process between an expected pattern and an actual pattern when forming the data of the pattern in FIG. 19;

FIG. 23 is an explanatory diagram illustrating a comparison process between an expected pattern and an actual pattern when forming the data of the pattern in FIG. 19;

FIG. 24 is an explanatory diagram illustrating a comparison process between an expected pattern and an actual pattern when forming the data of the pattern in FIG. 19;

FIG. 25 is a plan view of a principal part of a mask pattern and a phase shift pattern for forming the pattern of FIG. 19;

26 is a sectional view taken along line DD of FIG. 25.

FIG. 27 is a plan view of a main portion of a pattern to be transferred onto a semiconductor wafer for describing a method of generating pattern data of a mask according to another embodiment of the present invention.

FIG. 28 is an explanatory diagram for explaining a comparison process between an expected pattern and an actual pattern when forming the data of the pattern in FIG. 27;

FIG. 29 is an explanatory diagram for explaining a comparison process between an expected pattern and an actual pattern when forming the data of the pattern in FIG. 27;

FIG. 30 is an explanatory diagram for explaining a comparison process between an expected pattern and an actual pattern when forming the data of the pattern in FIG. 27;

FIG. 31 is a plan view of a principal part of a mask pattern and a phase shift pattern for forming the pattern of FIG. 27;

32 is a sectional view taken along line EE in FIG. 32.

FIG. 33 is an explanatory diagram for explaining a comparison process between an expected pattern and an actual pattern when forming the data of the pattern in FIG. 27;

FIG. 34 is a plan view of a principal part of a mask pattern and a phase shift pattern for forming the pattern of FIG. 27;

35 is a sectional view taken along line KK of FIG. 34.

FIG. 36 is a flowchart illustrating a method of generating mask pattern data according to another embodiment of the present invention.

FIG. 37 is an explanatory diagram for explaining that a mask pattern on a conventional phase shift mask is different from a pattern to be formed on a semiconductor wafer.

FIG. 38 is an explanatory diagram for explaining that a mask pattern on a conventional phase shift mask is different from a pattern to be formed on a semiconductor wafer.

FIG. 39 is an explanatory diagram for explaining that a mask pattern on a conventional phase shift mask is different from a pattern to be formed on a semiconductor wafer.

FIG. 40 is an explanatory diagram for explaining that a mask pattern on a conventional phase shift mask is different from a pattern to be formed on a semiconductor wafer.

FIG. 41 is an explanatory diagram for explaining that a mask pattern on a conventional phase shift mask is different from a pattern to be formed on a semiconductor wafer.

FIG. 42 is an explanatory diagram for explaining that a mask pattern on a conventional phase shift mask is different from a pattern to be formed on a semiconductor wafer.

[Explanation of symbols]

 Reference Signs List 1 layout layer 2 pattern data layer 3 pattern data layer 3a pattern data layer 3b pattern data layer 4 pattern data layer 4a pattern data layer 4b pattern data layer 5 pattern data layer 6a wiring pattern 6b wiring pattern 6c wiring pattern 6d wiring pattern 6e wiring pattern 6f Wiring pattern 7 Actual pattern data layer 7a Actual pattern data layer 8 Auxiliary pattern data layer 8a Auxiliary pattern data layer 9 Phase shift pattern data layer 9a Phase shift pattern data layer 9a1 First phase shift pattern data layer 9a2 Second phase shift pattern data Layer 10 Mask pattern 10a Light shielding area 10b Transmission area 11 Mask substrate 12a Phase shift pattern film 12b Phase shift pattern film 12c Phase shift pattern film 12d Phase shift pattern film 12e Phase shift pattern film 13 Phase shift mask 14 Connection hole pattern SY2 synthesis pattern SY3 synthesis pattern SY4 synthesis pattern SY5 synthesis pattern SY6 synthesis pattern SY7 synthesis pattern SY8 synthesis pattern SY9 synthesis pattern SY10 synthesis pattern F1 real pattern F2 real pattern F3 actual pattern H1 auxiliary pattern H2 auxiliary pattern S phase shift pattern S1 first phase shift pattern S2 second phase shift pattern S3 phase shift pattern S4 phase shift pattern S5 phase shift pattern S6 phase shift pattern S7 phase shift pattern S8 phase shift pattern EX1 Expected pattern EX2 Expected pattern EX3 Expected pattern EX4 Expected pattern EX5 Expected pattern 50 patterns 50a pattern 50b pattern 50 c pattern 50d pattern 51 pattern 51a pattern 51b pattern 51c pattern 51d pattern 52a phase shift pattern film 52b phase shift pattern film 52c phase shift pattern film 53a auxiliary pattern 54 pattern 54a pattern 54b pattern 54c pattern

Continuation of the front page (72) Inventor Masamichi Ishihara 2326 Imai, Ome-shi, Tokyo Inside the Device Development Center, Hitachi, Ltd. (56) References JP-A-3-89346 (JP, A) (58) Fields investigated ( Int.Cl. ⁷ , DB name) G03F 1/00-1/16

Claims (3)

(57) [Claims] 1. A method according to claim 1, wherein said pattern is transferred to a semiconductor wafer.
Real pattern ray that is the corresponding aperture or light blocking pattern
Out the actual pattern data
To store the pattern in the data layer and transfer the pattern to the semiconductor wafer.
Opening or shading pattern added to the actual pattern
The layout of the auxiliary pattern is performed.
A step of storing data in an auxiliary pattern data layer, and a mask in which the actual pattern and the auxiliary pattern are arranged
A phase difference occurs in the light transmitted through the mask according to the pattern.
Layout of the phase shift pattern to
The phase shift pattern data is transferred to the phase shift pattern layer.
Storing the data of the actual pattern, the data of the auxiliary pattern, and the like.
And a semiconductor wafer from the data of the phase shift pattern.
Creates data of the expected pattern that is assumed to be
And comparing the expected pattern with the actual pattern
And an actual pattern created through the inspection step.
Pattern data obtained by combining the data of
Mask pattern drawing data from the data
From the phase shift pattern data created through the process
Creating drawing data of a phase shift pattern; and a mask substrate based on the drawing data of the mask pattern.
Forming a mask pattern on the phase shift pattern;
Phase shift pattern on the mask substrate based on the
Forming a phase shift mask by forming a semiconductor wafer, and using the manufactured phase shift mask to form a semiconductor wafer.
Forming a pattern on the substrate.
A method for manufacturing a semiconductor device. 2. A method of manufacturing a semiconductor device according to claim 1, before Symbol semiconductor device whether electrical rule is satisfied, wherein the drawing checking to Turkey the real pattern data Production method. 3. The method of manufacturing a semiconductor device according to claim 1 , wherein the phase shift pattern data is
The method of manufacturing a semiconductor device comprising the Turkey is divided into two or more data layers.