JP3305663B2 - Transport box for semiconductor substrates - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a transfer box for semiconductor substrates, and more particularly to a transfer box for storing and transferring substrates such as Si wafers, glass substrates, and metal-coated substrates in advanced industries such as semiconductor, liquid crystal, and precision machine industries. It relates to a transport box (carrier box).

[0002]

2. Description of the Related Art Conventionally, air cleaning in a clean room will be described with reference to FIG. 18 by taking air cleaning in a semiconductor manufacturing factory as an example. In FIG. 18, first, coarse particles are removed by a pre-filter 2, then air-conditioned by an air conditioner 3, and dust is removed by a medium-performance filter 4. Next, fine particles are removed by a HEPA filter (high-performance filter) 6 installed on the ceiling of the clean room 5, and the clean room 5 is maintained in a class of 100 to 1,000 ("cleaning design" p.11). 24, Summer 1988). 7 _-1 , 7
_-2 indicates a fan, and arrows indicate the flow of air. Since the conventional air cleaning in a clean room is intended to remove fine particles, it has been configured as shown in FIG. Such a configuration is effective for removing fine particles, but is not effective for removing gaseous harmful components.

On the other hand, in a large room type clean room as shown in FIG. 18, there is a problem that the cost is too high for ultra-cleaning (BREAK THROUGH, 5).
No. p. 38-41, 1993). By the way, in the semiconductor industry, the quality and precision of products are increasing more and more, and accordingly, gaseous substances are involved as contaminants in addition to fine particles (particles) as a matter of course. That is, conventionally, only removal of fine particles has been sufficient, but control of gaseous substances (gaseous harmful components) will be important in the future. This is because the conventional clean room filter shown in FIG. 18 removes only fine particles, and gaseous harmful components from outside air are introduced into the clean room without being removed. .

That is, in a clean room, fine particles (particulate matter) or a conventional dust filter (eg, HEP)
A, ULPA filters) are not trapped and removed, but are introduced into the clean room. The exhaust gases from automobiles, and hydrocarbons (H.A.) caused by degassing from polymer resin products widely used as consumer products. C.) or basic (alkaline) like NH ₃ , amine, etc.
Gaseous substances such as gas pose a problem as gaseous harmful components. Of these, H. C. As a gaseous harmful component, an extremely low concentration in ordinary air (indoor air and outside air) causes contamination, and thus it is necessary to remove it. Recently, degassing from polymer resins of components and equipment used in clean rooms (eg, wafer storage boxes) has been described in H.A. C. It is a problem as an emission source (Japan Machinery Federation, 1994 report, March 1995, p.41-49,19)
95).

[0005] These gaseous substances also pose a problem when they are generated during work in a clean room. That is, as a cause of the gaseous substance, a gaseous substance introduced from the outside air in a normal clean room (a gaseous substance in the outside air is introduced because a gaseous substance cannot be removed by a filter in the clean room). Since the gaseous substances generated in the clean room are added, the gaseous substances in the clean room have a higher concentration than the outside air, and contaminate the wafer base material and the substrate. That is, the contaminants (fine particles,
If the gaseous harmful component) adheres to the substrate surface of a wafer, semi-finished product, or product, the fine particles cause a disconnection or short circuit of a circuit (pattern) on the substrate surface to cause a defect. Further, as a gaseous substance, C. Causes an increase in the contact angle when adhered to the wafer (substrate) surface; C. Affects the affinity (fit-in) between the substrate and the resist. When the affinity deteriorates, the film thickness of the resist is adversely affected, or the adhesion between the substrate and the resist is adversely affected (Air Purification, Vol. 33, No. 1, pp. 16-21, 199).
5). H. C. Causes degradation of the breakdown voltage (reliability) of the oxide film of the wafer (Proceedings of the 39th Joint Lecture on Applied Physics, p. 686, 1992).

[0006] NH ₃ causes the formation of ammonium salts and the like, and causes clouding (defective resolution) on wafers (Realize Inc., latest technology course, collection of materials, semiconductor process seminar, October 29, 1996, p.15). ~ 2
5, 1996). For these reasons, these gaseous contaminants as well as fine particles reduce the productivity (yield) of semiconductor products. In particular, the above gaseous substances as gaseous harmful components have been
In BR>, since the clean room air circulation is increased from the viewpoint of energy saving, the concentration of gaseous substances in the clean room is concentrated and is considerably higher than that of the outside air. Contaminates the surface. The degree of this contamination can be represented by the contact angle between the substrate and the substrate. A base material or a substrate having a large contact angle, even when formed on the surface thereof, has a low adhesion strength of the film (poor adaptability), leading to a decrease in yield.

Here, the contact angle refers to the contact angle of wetting with water, and indicates the degree of contamination of the substrate surface. That is, when a hydrophobic (oil-based) contaminant adheres to the substrate surface, the surface repels water and becomes hard to wet.
Then, the contact angle between the substrate surface and the water droplet increases. Therefore, the contamination degree is high when the contact angle is large, and low when the contact angle is small. In particular, since air in a clean room is recently circulated for energy saving, gaseous harmful components in the clean room gradually increase, and contaminate the base material and the substrate.

As a countermeasure for preventing contamination of the substrate from such contaminants, (1) transfer by a robot is effective. That is, since humans are a source of dust and gas, it is important to eliminate human intervention in order to maintain cleanliness (Monthly Semicondactor world, January, p.112-
116, 1997). (2) In terms of cleanliness, it has been proposed that local cleanup (mini-environment) to limit (localize) the clean space will be effective in future cleanliness (NIKKEI MICRODEVICES, 7). Monthly issue, p.136
141, 1995, Proceedings of IES, p. 37
3-378, 1994). At present, as such a mini-environment, a method of storing a Si wafer in a box made of synthetic resin (plastic) and transporting it is under study. (1) If dust is generated suddenly from inside, (2) It is necessary to take measures against degassing (gas generation) from box material, (3) (1) (2)
It has been pointed out that the number of steps for periodically cleaning the box itself increases, which makes the box complicated and practically problematic (KANOMAX Aerosol Seminar, pp. 1-10, 1996). Under such circumstances, the present inventors have proposed a space cleaning method using photoelectrons or photocatalysts as a local cleaning technique.

For example, 1) Cleaning method by photoelectrons (removal of particulate matter): Japanese Patent Publication No. 3-5859, Japanese Patent Publication No. 6-7
No. 4909, No. 8-211, No. 7-1213
6 9 No. 2) cleaned by the photocatalyst system (removal of gaseous harmful components): JP-A-9-168722, JP-9-2
05046, 3) Combined use of photoelectrons and photocatalysts (simultaneous removal of particles and gas): JP-A-1-266864. These cleaning methods are effective in the above-mentioned cleaning methods depending on the application destination (type of device) and required performance.
Depending on the application destination and required performance, it was necessary to appropriately improve the usage. In this improvement, there is a problem that the improvement is made to be more effective in practical use. As one of the problems, in these cleaning systems, the gas is fluidized by heat generated by a light source such as ultraviolet rays to perform cleaning. That is, depending on the application destination of the cleaning method, it is important how to effectively fluidize the gas, and this is a problem to be improved.

[0010]

SUMMARY OF THE INVENTION In view of the above-mentioned prior art, the present invention is demanded in advanced industries such as the semiconductor, liquid crystal, and precision machine industries as the quality, precision, and miniaturization of products progress. It is an object of the present invention to provide a semiconductor substrate transfer box having a practically effective function of removing fine particles or gaseous harmful components as a mini-environment semiconductor substrate transfer box.

[0011]

In order to solve the above problems SUMMARY OF THE INVENTION In the present invention, keep the transport box for a semiconductor substrate having an opening and closing mechanism capable of and out of the semiconductor substrate, one of said boxes
The side surface of the square, and the gas cleaning device using an optoelectronic or photocatalyst by light irradiation to clean the box, the device
Power supply with battery charging function that supplies power to the vehicle
Preparative, deployed as a gas cleaning unit integrated with removably said box, the flow path of gas in the unit
Cleaned gas is passed from the top of the unit to the box.
It is supplied to the upper part and passes through the gap between the stored semiconductor substrates.
From the bottom of the box to the bottom of the unit
The gas cleaning unit is configured to include a power supply device.
Radiator to transfer the heat generated by the gas to the gas purifier
Provided is obtained by the semiconductor substrate transport box, characterized in Rukoto.

[0012] The transport box has good to a material as synthetic resin, also the gas cleaning unit includes integrated power device, the heat radiating member for transmitting heat generated in the power supply device in the gas cleaning system ing.

[0013]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The semiconductor substrate transport box of the present invention has an opening / closing mechanism for accommodating a semiconductor substrate in and out of the box, and a photoelectron or photocatalyst by light irradiation for cleaning the inside of the box. Is integrated with a gas purifying device (gas purifying unit), which can be appropriately removed from the box. The gas purifying device is connected to a power supply device installed in a load port, a standby place waiting for a process, a stocker, etc. during a period of original use as a box transport (other than transport), It operates by receiving power supply, thereby purifying the gas in the box in which the substrate is stored. Further, the semiconductor substrate transport box of the present invention has an opening / closing mechanism that allows the semiconductor substrate to be stored in and out of the box, and gas cleaning using photoelectrons or photocatalysts by irradiating light to clean the inside of the box. It has a device and a power supply device with a battery mounted charging function for supplying power to the device, and they are integrated (gas cleaning unit), and the unit can be appropriately removed from the box. .

Further, the unit may be provided with a radiator for transmitting heat generated from the power supply device to a gas cleaning device using a photoelectron or a photocatalyst. These boxes of the present invention can store, transport and / or store a semiconductor substrate, and may be any containers that can be sealed. For example, it is made of metal or synthetic resin. Among these, those made of metal are preferably made of Al because of their light weight. In the case of a synthetic resin, any material may be used as long as it is excellent in processability, rigidity and durability, and generates little gas. However, a transparent material is more preferable. For example, there are general-purpose plastics such as ABS and acrylic, engineering plastics such as polycarbonate (PC), and super-engineering plastics such as polyetherimide.

The box opening / closing mechanism is the above-mentioned hermetically sealable box in which a gas purifying apparatus using a photoelectron or a photocatalyst according to the present invention described later can be installed, and any box which can appropriately store and take out substrates can be used. But it is good. For example, the box opening / closing mechanism is made of a box door, a wafer holder, and a sealing material, and is integrated. The box door is engaged with a door opener (SEMI standard), pulled out horizontally from the box body, and then moved downward. By lowering, the box door is opened from the box body. Examples of such boxes, and the position of the door, from the storage form of the substrate (whether housing the substrate to O flop down cassette), 1) the lateral opening integrated transport box, 2)
Open cassette accommodating type laterally opened transport box, 3) there are O <br/>-loop emissions cassette-storing bottom opening transport box.

Next, a gas purifier using a photoelectron or a photocatalyst, which can be appropriately removed from a box having the opening and closing mechanism, which is a feature of the present invention, will be described. By installing the apparatus in a part of the box, contaminants in the box are effectively removed by a gas flow (natural circulation) utilizing heat generation in the apparatus. First, the structure of a photoelectron cleaning device will be described. The photoelectron cleaning device is composed of a photoelectron emission material,
It is composed of an ultraviolet lamp, an electrode material for an electric field for emitting photoelectrons, and a charged particle collecting material, and removes fine particles. The photoelectron emitting material may be any material that emits photoelectrons when irradiated with ultraviolet rays, and the smaller the photoelectric work function, the better. In terms of effectiveness and economy, B
a, Sr, Ca, Y, Gd, La, Ce, Nd, Th,
Pr, Be, Zr, Fe, Ni, Zn, Cu, Ag, P
t, Cd, Pb, Al, C, Mg, Au, In, Bi,
Nb, Si, Ti, Ta, U, B, Eu, Sn, P, W
Or any of these compounds, alloys or mixtures thereof, and these are used alone or in combination of two or more. As the composite material, a physical composite material such as amalgam can be used.

For example, compounds include oxides, borides and carbides, and oxides include BaO, SrO, and Ca.
O, Y ₂ O ₅ , Gd ₂ O ₃ , Nd ₂ O ₃ , ThO ₂ , Z
rO ₂ , Fe ₂ O ₃ , ZnO, CuO, Ag ₂ O, La
₂ O ₃ , PtO, PbO, Al ₂ O ₃ , MgO, In _{2
O 3, BiO, NbO, YB} 6 is to include BeO, also _{borides, GdB 6, LaB 5, NdB} 6, CeB
₆ , EuB ₆ , PrB ₆ , ZrB _{2 and the} like, and further, as carbides, UC, ZrC, TaC, TiC, Nb
C and WC. In addition, brass, bronze,
Phosphor bronze, alloy of Ag and Mg (Mg is 2 to 20 wt.
%), An alloy of Cu and Be (Be is 1 to 10 wt%), an alloy of Ba and Al, and an alloy of Ag and Mg, an alloy of Cu and Be, and an alloy of Ba and Al. Alloys are preferred. The oxide can also be obtained by heating only the metal surface in air or oxidizing it with a chemical.

Still another method is to heat before use,
An oxide layer can be formed on the surface to obtain a stable oxide layer over a long period of time. As an example, an oxide film can be formed on the surface of an alloy of Mg and Ag in water vapor at a temperature of 300 to 400 ° C., and this oxide thin film is stable for a long time. In addition, a substance that emits photoelectrons can be used in addition to another substance. As an example of this, there is a material in which a substance capable of emitting photoelectrons is added to an ultraviolet ray transmitting substance (Japanese Patent Publication No. 7-93098).
No. JP-A-4-243540). There is integration with an ultraviolet source described later, for example, addition of a photoelectron emitting material to the surface of an ultraviolet lamp (Japanese Patent Application Laid-Open No. 4-243540). It is preferable depending on the type of the application box because the unit becomes compact by integration.

As will be described later, the shape and structure of the photoelectron emitting material differ depending on the shape and structure of the device (unit) or the desired effect, and can be determined as appropriate. The irradiation source for emitting photoelectrons from the photoelectron emitting material may be any source that emits photoelectrons upon irradiation, and ultraviolet rays are usually preferred. Any kind of ultraviolet rays may be used as long as the photoelectron emitting material emits photoelectrons by irradiation.
Any ultraviolet ray source can be used as long as it emits ultraviolet rays, but a mercury lamp, for example, a germicidal lamp is preferable in terms of compactness. Next, an ultraviolet light source which is a feature of the present invention,
The position and shape of the photoelectron emitting material, the electrode, and the charged fine particle collecting material will be described. These are characterized in that they are installed around an ultraviolet light source together with a photocatalyst described later as appropriate depending on required performance, and are integrated as a cleaning device (unit) for a gas containing harmful gases and fine particles.

The position and shape of the photoelectron emitting material may be any as long as they can be installed so as to surround the ultraviolet light emitted from the ultraviolet light source (to increase the irradiation area). Usually, ultraviolet rays from an ultraviolet ray source are radially emitted in the circumferential direction, so that any ultraviolet rays can be installed so as to surround the ultraviolet rays. The emission of photoelectrons from the photoelectron emitting material is effective by irradiating ultraviolet light under an electric field. The position and shape of the electrode for this purpose can be any as long as an electric field (electric field) can be formed between the electrode and the photoelectron emitting material. The electrode material and its structure may be those used in a known charging device. Any electrode material can be used as long as it is a conductor, such as tungsten, SUS or Cu-
There are Zn wire, rod shape, net shape, and plate shape. One or a combination of two or more of these is installed so that an electric field can be formed in the vicinity of the photoelectron emitting material (JP-A-2-303557).
issue).

As a collecting material (dust collecting material) for charged fine particles, various electrode materials such as a dust collecting plate and a dust collecting electrode in an ordinary charging device and an electrostatic filter system are generally used. A wool-like structure such as an electrode is also effective. Electrec materials can also be suitably used. The preferred combination of the photoelectron emission material, electrode material, and charged particle collection material is the box shape, structure, required performance,
It can be determined as appropriate depending on economics and the like, and any device can be used as long as pollutants such as fine particles existing in a cleaning space described later can be quickly moved into the present apparatus by installation in the space. The position and shape of the photoelectron emitting material and the electrode surround the ultraviolet light source, and the ultraviolet light source, the photoelectron emitting material, the electrode, and the charged fine particle collecting material can be integrated, the ultraviolet light emitted from the ultraviolet light source is effectively used, and Preliminary tests and the like can be determined in consideration of the shape, effect, economy, and the like of the box so that emission and charging and collection of the fine particles by the photoelectrons can be performed effectively. For example, when a rod-shaped (cylindrical) ultraviolet lamp is used, ultraviolet rays are emitted radially in the circumferential direction. Increase.

Next, a cleaning device using a photocatalyst will be described. The photocatalyst removes gaseous harmful components, and is excited by light irradiation from a light source, and causes an organic gas (non-methane hydrocarbon, HC) involved in the increase of the contact angle to be involved in the increase of the contact angle. Any material may be used as long as it can be decomposed into a non-forming form or converted into a stable form that does not affect the adherence. Generally, semiconductor materials are preferred because they are effective, readily available, and have good workability. From the viewpoint of effect and economy, Se, Ge, Si, Ti, Zn, Cu,
Al, Sn, Ga, In, P, As, Sb, C, Cd,
S, Te, Ni, Fe, Co, Ag, Mo, Sr, W,
Any of Cr, Ba, and Pb, or a compound, an alloy, or an oxide thereof is preferable, and these are used alone or in combination of two or more.

For example, as elements, Si, Ge, Se,
Compounds include AlP, AlAs, GaP, AlSb,
GaAs, InP, GaSb, InAs, InSb, C
dS, CdSe, ZnS, MoS ₂ , WTe ₂ , Cr ₂
Te ₃ , MoTe, Cu ₂ S, WS ₂ , and oxides such as TiO ₂ , Bi ₂ O ₃ , CuO, Cu ₂ O, ZnO, M
oO ₃ , InO ₃ , Ag ₂ O, PbO, SrTiO ₃ ,
BaTiO ₃ , Co ₃ O ₄ , Fe ₂ O ₃ , NiO and the like are available. Depending on the application destination, the photocatalyst can be formed on the metal surface by firing the metal material. As an example of this, Ti
Firing the wood, there is a photocatalyst effect formation of TiO ₂ on the surface thereof. The photocatalyst is characterized in that the photocatalyst surrounds the light source similarly to the photoelectron emitting material or is installed near the light source , and is integrated as a gas cleaning device (unit). Further, depending on the required performance, it can be integrated with the above-described cleaning device using photoelectrons, which is a feature of the present invention.

That is, the installation position of the photocatalyst in the gas cleaning apparatus is, for example, (1) direct addition to an ultraviolet lamp, (2) an ultraviolet source is surrounded by a glassy substance or a glass material, and the surface of the glassy substance is (3) Addition to the wall surface in the circumferential direction facing the ultraviolet light source, (4) Alternatively, apply the photocatalyst to a suitable material such as a plate, cotton, mesh, honeycomb, film, cylinder, or fiber. It may be coated or wrapped or sandwiched and fixed in the device for use. An example is the coating of titanium dioxide on a glass plate by the sol-gel method. The photocatalyst can be used in the form of a powder, but can be used in an appropriate shape by a known method such as sintering, vapor deposition, sputtering, coating, or baking.

These can be appropriately selected depending on the shape of the box, the type and shape of the light source, the type of the photocatalyst, the desired effect, economy, and the like. Further, in order to improve the photocatalytic action, Pt, Ag, Pd, RuO ₂ , C
A substance such as o ₃ O ₄ can be added and used. The addition of the substance is preferred because the photocatalysis is accelerated.
These can be used alone or in combination. Well-known means such as an impregnation method, a photoreduction method, a sputter deposition method, and a kneading method can be appropriately used for the addition method. As a light source for light irradiation, any light source that emits a wavelength that is absorbed by the photocatalyst material may be used. Light in the visible and / or ultraviolet region is effective, and a known light source can be used as appropriate. For example, there are a germicidal lamp, a black light, a fluorescent chemical lamp, and a UV-B ultraviolet lamp as mercury lamps.

In the case of removing only gaseous harmful components for removing contaminants, a visible light source can be used, and the ultraviolet lamp, for example, a germicidal lamp is effective. The germicidal lamp is preferable because the effective irradiation light amount to the photocatalyst (irradiation in which the photocatalyst absorbs and exerts a photocatalytic action) can be increased and the photocatalytic action is accelerated. Regarding the removal mechanism of the gaseous harmful component by the photocatalyst, the removal of the organic gas that increases the contact angle will be described. According to their research, the following can be considered.
That is, what can be said in common for the organic gas (HC) that increases the contact angle of the surface of the container in the normal clean room apparatus is that the high molecular weight H.C. C is the main component, and has a -CO, -COO bond (having a hydrophilic property) as its structure. This H. C is a hydrophobic substance having a hydrophilic part (—CO, —COO bond part) (−C— of the basic structure of HC).
C- part).

More specifically, the organic gas that increases the contact angle of the surface of a container such as a glass substrate in a normal clean room is a high molecular weight H ₁₆ of C _{16 to} C ₂₀ . C, for example, a phthalic acid ester and a higher fatty acid phenol derivative. The common thing to these components is that they have a -CO, -COO bond (having a hydrophilic property) as a chemical structure (Air Purification, Vol. 33, No. No. 1, p16-21, 199
5) That is. These contaminating organic gases are caused by plasticizers, mold release agents, antioxidants, etc. of the polymer product, and the location where the polymer product exists is the source ("air purification").
33, No. 1, p16-21, 1995). The details of the mechanism of treatment of these organic gases by the photocatalyst are unknown, but can be estimated as follows. That is, in these organic gases, the -CO and -COO bond portions are hydrogen-bonded to the OH groups on the wafer or glass surface, and the upper portion thereof becomes a hydrophobic surface. As a result, the wafer or glass surface becomes hydrophobic,
The contact angle becomes large, and when the film is formed on the surface, the adhesion of the film is weak.

That is, when a photocatalyst is placed in an atmosphere in which an organic gas is present, the photocatalyst has an adsorbing action.
C has its active part, -CO, -COO bond, adsorbed on the surface of the photocatalyst and undergoes photocatalysis to be converted into another stable form. As a result, it is considered that the organic gas is in a stable form (converted to a low molecular substance) and does not adhere to the wafer or the glass substrate, or does not show hydrophobicity even if it adheres. The photocatalyst is described in H. In addition to decomposing and removing C, it is also effective for removing basic gases (gaseous harmful components) such as ammonia and amines. The gas cleaning in this box can be performed independently by photoelectrons or photocatalysts depending on required performance, economy and the like, which is a feature of the present invention.

That is, when only fine particles (particulate matter) pose a problem, a cleaning device using photoelectrons is used. C and NH
_3. If only gaseous harmful components such as amines pose a problem, a photocatalytic cleaning device can be used. In the present invention, the above-described cleaning device (unit) is provided in a box.
By setting up, even if dust or gas is generated in the box, it is removed. That is, the present box is a box having a self-cleaning function. The box of the present invention is integrated with a unit-shaped gas purifying device using the above-described photoelectron or photocatalyst which is easily attached or detached, and is operated in connection with a power supply device to be cleaned. Alternatively, a power supply device equipped with a battery-equipped charging function and the cleaning device are integrated, and mounted and cleaned as a gas cleaning unit, which is a feature of the present invention.

First, the connection between the gas cleaning device of the present invention and the power supply device is shown in a schematic block diagram of FIG. The box 10 of the present invention is provided with a gas purifier A- ₂ using a photoelectron or a photocatalyst. Here, the box 10 is integrated with the gas cleaning device A- ₂ . The box of the present invention is used for transporting a substrate (carrier). However, in practical use, the ratio of residence time in a load port other than the transport, for example, a load port, a process waiting standby place, and a stocker is large, so that gas cleaning is performed. Device A
_-2 receives the supply of power from the power supply 13 in the power supply device 14 installed in the load port, the place where the process waits, and the stocker, and cleans the gas in the box 10 except for transport.

That is, the box 10 of the present invention, in which the gas cleaning device A- ₂ is integrated, is provided with a power supply device 14, for example, a load port of a semiconductor processing device, or a waiting place during the process, during the time of transportation. The box is cleaned by being installed in a stocker or the like and receiving power supply as described above. As a result, the gas in the box is cleaned during the standby time of the box (such as general installation or night installation) by using the photoelectrons or the photocatalyst, so that the space in the box in which the substrates are stored is extremely large. A clean space is created. Next, the integration of the gas cleaning device and the power supply device of the present invention will be described with reference to a schematic block diagram shown in FIG. Box 1 of the present invention
0 includes a power supply A- ₁ with a battery-equipped charging function,
A gas purifier A- ₂ using a photoelectron or a photocatalyst is provided. Here, the power supply device A- ₁ and the gas cleaning device A- ₂ are integrated (gas cleaning unit, A).

That is, the power supply A- ₁ comprises a power supply 13 for supplying electric power to the charging circuit 11, the battery 12, and the gas purifying apparatus A- ₂ . Is supplied to the battery 12 via the charging circuit 11. The box of the present invention is used for conveyance (carrier), and the gas cleaning device A- ₂ during conveyance is provided with the power supply A as described above.
Power source 13 of electric power charged in battery 12 at _-1
Is continuously operated by the supply from. Battery 12
May be any as long as it can be charged and can appropriately supply power. Examples thereof include a Li-ion battery and a Ni-hydrogen battery. The box 10 of the present invention, in which the gas cleaning unit A is integrated, is installed on a power supply device 14, for example, a load boat of a semiconductor processing device, a stocker at a waiting place during a process, or the like during the transportation. Thus, power is supplied to the battery 12. Thereby, in the box, the gas cleaning using the photoelectron or the photocatalyst is performed,
Since the transfer is performed during the transport and installation of the box, that is, continuously, the ultra-clean space is maintained in the box.

Next, the use of heat generated from the power supply A- ₁ which is a feature of the present invention will be described. In the power supply device A- ₁ , there are electronic components (for example, power transistors and power FETs) that generate much heat when used, and electronic components that generate little heat. This is transmitted to the cleaning device A- ₂ to promote the gas flow. This will be described with reference to FIGS. First, FIG. 8A will be described. Heat generated from the electronic component 15 generated by the operation is transmitted to the wall surface 17 of the gas cleaning device A- ₂ via the heat radiating plate 16. 18
Is a heat conductive sheet for efficiently transmitting the heat.
Reference numeral 18 may be made of heat conductive grease or epoxy resin adhesive other than the sheet. Here, the heat radiating plate 16 may be any material as long as it efficiently transmits heat, for example, Cu, Al
There is. Usually, Al is preferable because of its light weight and relatively low cost. 19 is a printed circuit board 20
It is an electronic component with little heat generation installed on it.

Thus, the electronic component 15 that generates a large amount of heat
The heat generated from the gas is transmitted to the wall of the gas purifier A- ₂ .
Since the amount of gas circulation in the device A- ₂ is accelerated by the effective use of the heat generation, the inside of the box is effectively cleaned. The gas cleaning of the present invention is essentially slow because the gas flow is caused by heat generated from a light source such as an ultraviolet lamp, but the gas flow is accelerated by utilizing the heat generated from the electronic components. Will be effective. Next, FIG. 8B will be described. FIG.
(B) is that the heat radiating plate 16 is directly installed inside the gas cleaning device via the wall surface 17. FIG.
In FIG. 8B, the same reference numerals as those in FIG.

The present invention can be similarly used in various gases such as N ₂ and Ar as well as in air in a normal clean room. This box can be used not only for transportation but also as a stock box (stocker) because a clean space can be continuously obtained by supplying power, which is a feature of the present invention. Depending on the type of box and required performance, a heating source such as a heater or a lamp can be installed inside to accelerate the gas flow. The installation accelerates the removal of contaminants, so that it can be used as appropriate. The integration of the gas purifying apparatus or the gas purifying unit of the present invention into a box can be performed by using a well-known joining method such as through a gas-free packing material or by using a magnet (magnetic force). .

[0036]

EXAMPLES Next, examples will be described, but the present invention is not limited to these examples. Reference Example 1 A wafer transfer box 21 in a semiconductor factory will be described with reference to FIG. FIG. 1 shows a horizontal opening integrated transport box. In a semiconductor factory, high-quality products are manufactured in a class 1,000 clean room. Since the wafer 22 is processed (formed into a film or the like) into a high-quality (miniaturized, refined) product, it is affected by gaseous substances and fine particulate substances (fine particles). That is, as a gaseous harmful component introduced into the clean room of class 1,000 from the outside air. In addition to C, 1.1 to 1.5 ppm of non-methane hydrocarbons due to degassing from clean room components and equipment are present. On the other hand, since a contaminant (gaseous substance, fine particles) is also generated from the worker, the vicinity of the person is a dirty environment for the wafer 22.

For this reason, the wafer 22 is stored in the wafer transfer box 21, transferred to each process (for example, a film forming step), and processed into a high-quality product. The opening / closing mechanism of the box 21 includes a box door 23, a wafer holder 24, and a sealing material 25, and is integrated.
The box door 23 is opened from the box body 21 by engaging with a door opener (not shown, SEMI standard), pulling out from the box body in the horizontal direction, and then pulling it down. In the box 21, the automatic transfer robot for the clean room holds the robot flange 26, and is mounted on a load boat of the semiconductor processing apparatus. After the box door 23 is opened, the wafer 22 is loaded one by one by the clean room scalar robot. Unloaded. After the box door 23 is closed, it is transported again by the automatic transport robot for the clean room to the next processing apparatus.

An ultraviolet lamp 27,
A gas cleaning device A- _{2 including a} photocatalyst 28, a photoelectron emission material 29, a photoelectron emission electrode 30 from a photoelectron emission plate, and a charged fine particle trapping material 31 is provided. The cleaning device A- ₂
The power supply from the power source for operation, the it is as in Figure 6, air cleaning in the box 21, the device A _-2
It is implemented by. Since the device A- ₂ is supplied with power from a power supply device installed in a load port or a stocker, cleaning is performed for a long time (clean space is maintained). That is, the box 21 contains hydrocarbon (HC) as a gaseous harmful component (hazardous gas) that adheres to the wafer 22 and increases the contact angle of the wafer. And fine particles that cause a reduction in yield are present. These contaminants enter the box 21 from the clean room each time the box 21 is opened and closed for storing and removing the wafer 22 from and into the box 21.

Here, the H. C is decomposed by the photocatalysis of the photocatalyst 28 irradiated with the ultraviolet rays from the ultraviolet lamp 27, and is converted into a form that does not increase the contact angle. In addition, the fine particles (particulate matter)
3 emitted from the photoelectron emitting material 29 irradiated with
The charged fine particles are collected by the electrode 31 as a collecting material for the charged fine particles, and the cleaning space B where the wafer 22 is present is ultra-cleaned. H. in the box Movement of C and the gas cleaning device A _-2 microparticles, the air caused by the small temperature difference between the upper and lower gas cleaning device A in _-2 caused by irradiation of the ultraviolet lamp 27 in the apparatus A _-2 It depends on the flow (34 _{-1 to} 34 _{-6 in} FIG. 1). Here, the material of the box is P.P. C. Lamp, germicidal lamp (254 nm) for UV lamp, Ti catalyst for Al material
O ₂ was added, the photoelectron emitting material was Au added to the Al material, the electrode for photoelectron emission was a mesh SUS (10 V / cm), and the charged fine particle collecting material was a SUS material (500 V / cm).

In FIG. 1, reference numeral 35 denotes a light-shielding material which prevents irradiation of the wafer 21 with ultraviolet rays from the ultraviolet lamp 27. Reference numeral 36 denotes a partition plate for effectively flowing the air flows 34 _{-1 to} 34 _-6 due to the ultraviolet irradiation to the vicinity of the wafer. In this way, the harmful gas and particulates in the air in the box 21 are processed, and the air in the box 21 is stored when a substrate such as a wafer is stored.
The contact angle does not increase, and a space that is ultraclean than in class 1 is maintained. Since the contact angle of a substrate such as a wafer does not increase, when a film is formed on the surface of the substrate, there is an effect that a strong adhesive force can be formed (HC concentration: 0.1 ppm or less,
NH ₃ concentration: 1 ppb or less). The gas purifier A- ₂ is
It can be separated from the cleaning space B of the box in which the wafer is stored, and they are joined via a packing material. Separation is performed during regular maintenance, for example, 1
It is performed every time / year. This facilitates maintenance and management of the container in the cleaning space (B) where the wafers are stored in the box and the gas cleaning device (A _-2 ). 37 is
It is a kinematic coupling and a positioning V groove.

Embodiment 1 FIG. 2 shows a wafer transfer box in a semiconductor factory.
Since the influence of gaseous substances can be ignored on the wafers in this factory, only the removal of fine particles is performed. In the box 21 of FIG. 2, a gas cleaning device A- ₂ is installed, and the device A- ₂ includes an ultraviolet lamp 27, a photoelectron emission material 29, and a photoelectron emission material 29.
An electrode 30 for emitting photoelectrons from the substrate and a charged fine particle collecting material 31 are provided. The air cleaning in the box 21 is as described in FIG.
As described above, the operation is performed by supplying power from a load port to the gas cleaning device A- ₂ or a power supply device installed in a stocker. That is, in the box 21, fine particles that cause a defect due to disconnection or short-circuit when attached to the wafer 22 and that lower the yield are present. Each time the box 21 is opened or closed for storing or taking out the wafer 22 into or from the box 21, the fine particles are collected in the clean room (class 1,00).
0) to enter the box 21.

Here, the fine particles are charged by the photoelectrons 33 emitted from the photoelectron emitting material 29 irradiated with ultraviolet rays from the ultraviolet lamp 27 to become charged fine particles, and the charged fine particles are collected by the charged fine particle collecting material 31. And the wafer 22
Is super-purified. The cleaning (air cleaning) by the gas cleaning device A- ₂ is performed for a long time because power is supplied from the power supply device as described above. In this way, an ultra-clean space that is cleaner than the class 1 is maintained in the box 21. In FIG. 2, the same symbols as those in FIG. 1 have the same meaning.

Embodiment 2 FIG. 3 shows a wafer transfer box in a semiconductor factory.
In this factory, since the effect of the fine particles can be neglected because it is used in a clean space that is cleaner than class 10, only the removal of gaseous harmful components is performed. The gas cleaning device A- ₂ of the box 21 in FIG. 3 includes an ultraviolet lamp 27 and a photocatalyst 28. The air in the box 21 is cleaned by power supply from a load port to the gas purifier A- ₂ or a power supply device installed in a stocker as shown in FIG. That is, the box 21 contains gaseous harmful components (hazardous gas) as gaseous harmful components (hazardous gases) that, when attached to the wafer 22, increase the contact angle of the wafer. C and NH ₃ are present. The harmful gas enters the box from the clean room each time the box 21 is opened and closed for storing and removing the wafer 22 from and into the box 21. Further, depending on the type of the wafer, there is generation from the wafer surface (hazardous gas generation).

Here, these harmful gases are decomposed by the photocatalyst action of the photocatalyst 28 irradiated with the ultraviolet rays from the ultraviolet lamp 27 and converted into a form that does not increase the contact angle. B is ultra-cleaned. The cleaning (air cleaning) by the gas cleaning device A- ₂ is performed for a long time because power is supplied from the power supply device as described above. In the box 21, even if harmful gas is generated from the surface of the wafer 22, the space is cleaned in a self-cleaning manner. In this way, the harmful gas in the air in the box 21 is processed, and the air in the box 21 becomes clean air from which the harmful gas whose contact angle does not increase when a substrate such as a wafer is stored is removed. (HC concentration: 0.1 ppm or less, NH ₃ concentration: 1
ppb or less). 3, the same symbols as those in FIG. 1 have the same meaning.

REFERENCE EXAMPLE 2 Another type of the wafer transfer box 21 shown in FIG. 1 of Reference Example 1 is shown in FIG. FIG. 4 shows an open cassette storage type horizontal opening transfer box in which an open cassette 38 holding the wafer 22 is stored in the box of FIG. In the opening / closing mechanism of this box, since the wafer 22 is held in the open cassette 38, there is no wafer holding (24 in FIG. 1). 4, the same reference numerals as those in FIG. 1 have the same meaning.

REFERENCE EXAMPLE 3 FIG. 5 shows another type of the wafer transfer box of the reference example 1 shown in FIG. FIG. 5 shows an open cassette storage type bottom-opening transport box. The box 21 has a box door 23 and a box 21 opening / closing mechanism made of a sealing material 25 at the bottom. That is, the box 21
Is a box with a bottom opening, and an opening / closing mechanism including a box door 23 of the box 21 and a sealing material 25 engages an opener with an elevator mechanism (not shown) with the box door 23 and lowers it vertically. The box door 23 is opened. Inside the box 21 is an open cassette 3 holding a wafer 22.
8 is stored. 5, the same symbols as those in FIG. 1 have the same meaning.

Embodiment 3 A wafer transfer box having a structure integrated with a cleaning device for removing harmful gases or fine particles shown in FIG.
Installed in a semiconductor factory of class 1,000, put the following sample gas, irradiate ultraviolet rays, and measured the contact angle on the wafer stored in the wafer transfer box, the concentration of fine particles and the concentration of non-methane hydrocarbons in the box. . Here, the power supply to the power supply device was performed by connecting to a power supply device of a stocker in a clean room. 1) The size of the transport box;
C. 2) Cleaning device (1) Ultraviolet light source; Sterilizing lamp 4W. (2) Photocatalyst material; TiO ₂ is added on an Al plate by a sol-gel method. (3) Photoemission material; Au is added on an Al plate. (4) Electrode for photoelectron emission; latticed SUS material, 20
V / cm. (5) Collector for charged fine particles (electrode plate); SUS plate,
800 V / cm.

3) Sample gas (inlet) Medium gas: air, fine particle concentration: class 1,000, non-methane hydrocarbon concentration: 1.5 ppm 4) wafer; 12 inches 5) measuring instrument measurement of contact angle; Goniometer Measurement of particle concentration; Light scattering particle counter (> 0.1 μm) Measurement of non-methane hydrocarbon concentration; Gas chromatograph The particle concentration (class) is the particle concentration of 0.1 μm or more contained in 1 ft ³ . Indicates the total number.

Results (1) Contact Angle on Wafer FIG. 15 shows the relationship between the contact angle on the wafer stored in the box and the holding time. In FIG. 15, the cleaning performed with both the photocatalyst and the photoelectron is indicated by -〇, the cleaning performed only with the photocatalyst of the present invention is denoted by-△, and the cleaning performed only by the photoelectron is denoted by-□. Those without cleaning are indicated by-●-. (2) Particle concentration (class) in the box Table 1 shows the particle concentration (class) in the box after 1 hour, 2 hours, 1 day, and 1 week. For comparison, Table 1 shows the results obtained by performing the cleaning using both the photoelectrons and the catalyst and the results obtained without the cleaning.

[0050]

[Table 1] ──: Not measured (3) Non-methane hydrocarbon concentration in box (ppm) Evaluation was performed at the same time and the same comparison as described above.

[0051]

[Table 2]

In order to confirm the removal of non-methane hydrocarbons in the space on the wafer, the wafer was housed in a box under the above-mentioned conditions, and phthalic acid esters (DOP, DBP) on the wafer were examined. Measuring method: Deposits on the wafer exposed to air under the above conditions for 16 hours were desorbed, and phthalate was measured by GC / MS. As a result, phthalic acid esters were detected in all the devices without the photocatalyst. On the other hand, when the photocatalyst of the present invention was set, no phthalate ester was detected.

Reference Example 4 A wafer transfer box 21 in a semiconductor factory will be described with reference to FIGS. 9 and 10 show a horizontal opening integrated type transport box, and FIG. 10 is a side view of FIG. In a semiconductor factory, high-quality products are manufactured in a class 1,000 clean room. Since the wafer 22 is processed (formed into a film or the like) into a high-quality (miniaturized, refined) product, it is affected by gaseous substances and fine particulate substances (fine particles).
That is, as a gaseous harmful component introduced into the clean room of class 1,000 from the outside air. In addition to C, 1.1 to 1.5 ppm of non-methane hydrocarbons due to degassing from clean room components and equipment are present. On the other hand, since a contaminant (gaseous substance, fine particles) is also generated from the worker, the vicinity of the person is a dirty environment for the wafer 22. For this reason, the wafer 22 is transferred to the wafer transfer box 21.
And transported to each process (eg, film forming process) to be processed into high quality products.

The opening / closing mechanism of the box 21 comprises a box door 23, a wafer holder 24, and a sealing material 25, and is integrated, and the box door 23 is a door opener.
The box door 23 is opened from the box main body 21 by engaging with a SEMI standard (not shown) and pulling out from the box main body in the horizontal direction, and then pulling down the lower row. In the box 21, the automatic transfer robot for the clean room holds the robot flange 26, and is mounted on a load boat of the semiconductor processing apparatus. After the box door 23 is opened, the wafer 22 is loaded one by one by the clean room scalar robot. Unloaded. After the box door 23 is closed, it is transported again by the automatic transport robot for the clean room to the next processing apparatus. The box 21 has an ultraviolet lamp 27,
A gas purifying device A- ₂ comprising a photocatalyst 28, a photoelectron emitting material 29, a photoelectron emitting electrode 30 from a photoelectron emitting plate, and a charged fine particle collecting material 31, and a battery for supplying power to the gas purifying device A- ₂ A gas purifying unit A (A _-1 + A _-2 ) including a power supply device A _-1 with a charging function mounted on a 12 is provided.

The power supply device A- ₁ and the gas cleaning device A- ₂ in the unit A are as shown in FIGS. 7 and 8 above, and the air in the box 21 is cleaned by the unit A. . The cleaning (air cleaning) by the gas cleaning device A- ₂ is continuously performed for a long time because power is supplied from the power supply device A- ₁ . That is, the box 21 contains hydrocarbon (HC) as a gaseous harmful component (hazardous gas) that adheres to the wafer 22 and increases the contact angle of the wafer. And fine particles that cause a reduction in yield are present. These contaminants are supplied to the box 21 for storing and removing the wafer 22 from and into the box 21.
Each time the box is opened and closed, the box enters the box 21 from the clean room.

Here, the H. C is decomposed by the photocatalysis of the photocatalyst 28 irradiated with the ultraviolet rays from the ultraviolet lamp 27, and is converted into a form that does not increase the contact angle. In addition, the fine particles (particulate matter)
3 emitted from the photoelectron emitting material 29 irradiated with
The charged fine particles are collected by the electrode 31 as a collecting material for the charged fine particles, and the cleaning space B where the wafer 22 is present is ultra-cleaned. H. in the box Movement of C and the gas cleaning device A _-2 microparticles, the apparatus A _-2 irradiation of the ultraviolet lamp 27 in, and the power supply A gas cleaning caused by heat generated from the _-1 device A _-2
Due to the flow of air (34 _{-1 to} 34 _{-6 in} FIG. 9) caused by a small temperature difference between the upper and lower portions of the inside. Here, the material of the box is P.P. C. UV lamp is a germicidal lamp (254
nm), the photocatalyst added TiO ₂ to the Al material, the photoelectron emitting material added Au to the Al material, and the electrode for photoelectron emission was reticulated S.
US (10 V / cm), the charged fine particle collecting material is a SUS material (500 V / cm).

In FIG. 9, reference numeral 35 denotes a light shielding material which prevents the ultraviolet rays from the ultraviolet lamp 27 from being irradiated on the wafer 21. Reference numeral 36 denotes a partition plate, and the flow of air 34 _{-1 to} 34 _-6 due to the ultraviolet irradiation and heat generation from the power supply device.
In the vicinity of the wafer. In this way, the harmful gas and particulates in the air in the box 21 are treated. When the substrate such as a wafer is stored, the air in the box 21 does not increase the contact angle and is super-cleaner than class 1. Space is maintained. Since the contact angle of a substrate such as a wafer does not increase, when a film is formed on the surface of the substrate, there is an effect that a strong adhesive force can be formed (HC concentration: 0.1 ppm or less, NH ₃ concentration: 1 ppm or less). .
The gas cleaning unit A can be separated from the cleaning space B of the box in which the wafer is stored, and they are joined via a packing material. The disconnection is performed at the time of regular maintenance, for example, once / year. This facilitates maintenance and management of the container in the cleaning space (B) and the gas cleaning unit (A) in the box.
Reference numeral 37 denotes a kinematic coupling, which is a V groove for positioning.

Embodiment 4 FIG. 11 shows a wafer transfer box in a semiconductor factory. Since the influence of gaseous substances can be ignored on the wafers in this factory, only the removal of fine particles is performed. Box 2 in FIG.
The gas purifier A- ₂ in 1 is _equipped with an ultraviolet lamp 27,
It comprises a photoelectron emitting material 29, an electrode 30 for emitting photoelectrons from the photoelectron emitting material 29, and a charged particle collecting material 31. Air cleaning in box 21, the said gas cleaning system A _-2 as in FIG 7 and 8, wherein the said gas cleaning system A battery 12 supplies power to _-2, mounted charging function Power Supply A _{-1 is performed} by the gas cleaning unit A (A _-1 + A _-2 ).

That is, in the box 21, fine particles which cause a defect due to disconnection or short circuit when adhered to the wafer 22 and which cause a reduction in yield are present. Each time the box 21 is opened and closed for storing and taking out the wafer 22 into and from the box 21, the fine particles are collected in the clean room (class 1, 0).
00) into the box 21. Here, the fine particles are charged by photoelectrons 33 emitted from the photoelectron emitting material 29 irradiated with ultraviolet rays from the ultraviolet lamp 27,
Become charged fine particles, and the charged fine particles are charged particle collecting material 3
1 and the cleaning space B where the wafer 22 is present is super-cleaned. The cleaning (air cleaning) by the gas cleaning device A- ₂ is continuously performed for a long time because power is supplied from the power supply device A- ₁ . In this way, an ultra-clean space that is cleaner than the class 1 is maintained in the box 21. In FIG. 11, the same reference numerals as those in FIGS.

Embodiment 5 FIG. 12 shows a wafer transfer box in a semiconductor factory. In this factory, because the specifications are in a clean space that is cleaner than class 10, the effects of fine particles can be ignored, so only gaseous harmful components are removed. The gas cleaning device A- _{2 in} the box 21 in FIG.
Consisting of The air purification in the box 21 is as shown in FIG.
8 and the gas cleaning device A _-2 as described, above the gas cleaning device A _-2 consisting battery mounted charging function Power Supply A _-1 supplying power to a gas cleaning unit A (A _-1 +
A- ₂ ). That is, the box 21 contains gaseous harmful components (hazardous gas) as gaseous harmful components (hazardous gases) that, when attached to the wafer 22, increase the contact angle of the wafer. C and NH ₃ are present. The harmful gas enters the box from the clean room each time the box 21 is opened and closed for storing and removing the wafer 22 from and into the box 21. Further, depending on the type of the wafer, there is generation from the wafer surface (hazardous gas generation).

Here, these harmful gases are decomposed by the photocatalyst action of the photocatalyst 28 irradiated with the ultraviolet rays from the ultraviolet lamp 27 and converted into a form that does not increase the contact angle. B is ultra-cleaned. The cleaning (air cleaning) by the gas cleaning device A- ₂ is continuously performed for a long time because power is supplied from the power supply device A- ₁ . Box 21
Then, even if harmful gas is generated from the surface of the wafer 22,
The space is cleaned in a self-cleaning manner. In this way, the harmful gas in the air in the box 21 is processed, and the air in the box 21 becomes clean air from which the harmful gas whose contact angle does not increase when a substrate such as a wafer is stored is removed. (HC concentration: 0.1 ppm or less, NH ₃ concentration: 1
ppb or less). In FIG. 12, the same reference numerals as those in FIGS.

Reference Example 5 The wafer transfer box 21 shown in FIGS.
Another type of box is shown in FIG. FIG. 13 shows an open cassette storage type horizontal opening transfer box in which the open cassette 38 holding the wafer 22 is stored in the box shown in FIGS. In the opening / closing mechanism of this box, since the wafer 22 is held in the open cassette 38, there is no wafer holder (FIGS. 9, 11, and 12).
In FIG. 13, the same reference numerals as those in FIGS.

Reference Example 6 FIG. 14 shows another type of box of the wafer transfer box shown in FIGS. FIG. 14 shows an open cassette storage type bottom- opening transport box. The box 21 has a box door 23 and a box 21 opening / closing mechanism made of a sealing material 25 at the bottom thereof. That is, the box 21 is a bottom-opening box, and an opening / closing mechanism including the box door 23 and the sealing material 25 of the box 21 is as follows.
The box door 23 is operated by engaging an opener with an elevator mechanism (not shown) with the box door 23 and lowering the box door 23 in the vertical direction, whereby the box door 23 is opened. The box 21 stores an open cassette 38 holding the wafer 22. In FIG. 14, the same reference numerals as those in FIGS.

Embodiment 6 A wafer transfer box having the structure shown in FIGS. 11 and 12 is installed in a semiconductor factory of class 1,000, and the wafer transfer box shown in FIGS.
A gas purifying unit comprising a purifying device for removing harmful gases or fine particles shown in FIG. 12 and a power supply device with a charging function equipped with a battery for supplying a voltage to the device having the structure shown in FIGS. Install, put the following sample gas,
Ultraviolet irradiation was performed to measure the contact angle on the wafer stored in the wafer transfer box, the concentration of fine particles in the box, and the concentration of non-methane hydrocarbons. Here, the power supply to the power supply device was performed from the power supply device of the stocker in the clean room. 1) The size of the transport box;
C. 2) Cleaning device (1) Ultraviolet light source; Sterilizing lamp 4W. (2) Photocatalyst material; TiO ₂ is added on an Al plate by a sol-gel method. (3) Photoemission material; Au is added on an Al plate. (4) Electrode for photoelectron emission; latticed SUS material, 20
V / cm. (5) Collector for charged fine particles (electrode plate); SUS plate,
800 V / cm.

3) Power supply device (1) Charging circuit; a device equipped with a voltage monitor circuit for charging a battery under optimum conditions. (2) Battery; Li-ion battery. (3) Power supply; voltage required for cleaning device (for lighting sterilizing lamp: AC voltage of 20 to 50 kHz, for electrode for photoelectron emission; DC 100 V, for collecting material of charged fine particles:
A DC-DC converter and a DC-AC converter for supplying DC (1,000 V). (4) Electronic components that generate a lot of heat used to accelerate the amount of air circulation
Power transistors and power FEs used in DC-DC converters, DC-AC converters and charging circuits
T. (5) Heat sink: Al plate (thickness: 2 mm).

4) Sample gas (inlet) Medium gas: Air, fine particle concentration: Class 1,000, non-methane hydrocarbon concentration: 1.5 ppm 5) Wafer; 12 inches 6) Measuring instrument Measurement of contact angle; Goniometer Measurement of particle concentration; Light scattering particle counter (> 0.1 μm) Measurement of non-methane hydrocarbon concentration; Gas chromatograph The particle concentration (class) is the particle concentration of 0.1 μm or more contained in 1 ft ³ . Indicates the total number.

Results (1) Contact Angle on Wafer FIG. 16 shows the relationship between the contact angle on the wafer stored in the box and the holding time. In FIG. 16, the cleaning performed with both the photocatalyst and the photoelectron is indicated by −〇, the cleaning performed only with the photocatalyst of the present invention is indicated by − △, and the cleaning performed only by the photoelectron is indicated by − □ −. Those without cleaning are indicated by-●-. (2) Particle concentration (class) in the box Table 3 shows the particle concentration (class) in the box after 1 hour, 2 hours, 1 day, and 1 week. For comparison, Table 3 shows the results obtained by performing cleaning with both photoelectrons and photocatalysts and the results obtained without cleaning.

[0068]

[Table 3] -: Not measured (3) Non-methane hydrocarbon concentration in the box (ppm) The same time and the same comparison as above were evaluated.

[0069]

[Table 4]

In order to confirm the removal of non-methane hydrocarbons in the space on the wafer, the wafer was housed in a box under the above conditions, and phthalic acid esters (DOP, DBP) on the wafer were examined. Measuring method: Deposits on the wafer exposed to air under the above conditions for 16 hours were desorbed, and phthalate was measured by GC / MS. As a result, phthalic acid esters were detected in all the devices without the photocatalyst. In contrast, no phthalate ester was detected in any of the photocatalysts of the present invention. A test was conducted with the photocatalyst of the present invention set forth above, with the heat sink removed. The results are shown in FIG. The figure shows the relationship between non-methane hydrocarbon concentration and retention time. In FIG. 17, those of the present invention are indicated by -〇-, and those obtained by removing the heatsink as a comparison are indicated by -−-. From FIG. 17, it can be seen that the removal rate by the present cleaning device is increased by installing the heat sink. In FIG. 17, ↓ indicates the detection limit (0.1 ppm) or less.

[0071]

According to the present invention, the following effects can be obtained. 1) In a semiconductor substrate transport box, the box has an opening / closing mechanism, and a gas purifying apparatus using a photoelectron or a photocatalyst for purifying the inside of the box, or a power supply with a battery mounted charging function for supplying power to the apparatus. By providing the device, (1) the inside of the box was cleaned by a gas cleaning device, and the cleaning was continuously performed for a long time because power was supplied from the power supply device. (2) The box can be handled by a robot due to the opening and closing mechanism. (3) Depending on the type of the box to be used, required performance, economy, etc., the gas cleaning device may be installed by a photoelectron cleaning method (only removal of fine particles) or a photocatalyst cleaning method (only removal of gaseous harmful components). Could be selected appropriately. That is, the cleaning method was practically effective, and the application range was widened.

(4) Fine particles or gaseous harmful components in the box (wafer storage space) were effectively removed. In other words, a space that is cleaner than class 1 can be easily created for removing fine particles, and a clean space that does not increase the contact angle can be easily created for removing gaseous harmful components. (5) Even when the power supply device is not integrally provided, the residence time of the substrate storage box is considerably longer than the time required for the actual transfer, such as a load port, a stocker, a process waiting time, etc. Many. Therefore, by installing the power supply device in a place other than the conveyance, the cleaning by the cleaning device of the present invention was rationally performed for a long time.

2) In the cleaning by the gas purifying apparatus in the above 1), by transmitting heat generated by the power supply unit to the gas purifying apparatus, the gas flow in the box is accelerated, and contaminants by photoelectrons or photocatalysts are conveyed. Removal became effective. 3) By integrating the gas purifying device in 1) above so that it can be removed from the box, (1) Since it can be separated from the cleaning space of the box,
Maintenance and management of the cleaning space and the unit became easier. (2) It can be mounted not only on the box of the present invention but also on any other appropriate box, so that the applicable range is expanded.

4) From the above, (1) Gas and dust generated from the substrate surface and gas and dust generated from the box surface, as well as contaminants entering the box accompanying storage and unloading of the substrate, It was removed and the inside of the box was ultra-cleaned in a self-cleaning manner. (2) As a box material, a plastic material which is concerned about outgassing can be used. Plastic is light and effective in practice. (3) Since the power is supplied from the power supply device and the cleaning is continuously performed (the ultra-clean space is maintained), it can be suitably used as a stock box (stocker). (4) Since the box is practically effective, it can be used as a substrate transport box in a wide range of fields. (5) The range of application is expanded, and the practicality is improved. (6) In the future, the quality and size of semiconductors will continue to increase, and at the same time, the size of the substrates will increase, and the use of robots and substrate storage boxes will be indispensable. It can be suitably used as a storage box (for transport and stock).

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating an example of a horizontally-opening integrated transfer box according to Reference Example 1.

FIG. 2 is a cross-sectional view showing another example of the horizontal opening integrated transfer box of the present invention.

FIG. 3 is a cross-sectional view illustrating another example of the horizontally-opening integrated transfer box of the present invention.

FIG. 4 is a cross-sectional view showing an example of an open cassette storage type horizontally-opening transport box of Reference Example 2.

FIG. 5 is a cross-sectional view showing an example of an open cassette storage type horizontally-opening transport box according to Reference Example 3;

FIG. 6 is a block diagram in which the gas cleaning unit of the present invention and a power supply device are connected.

FIG. 7 is a block diagram in which the gas cleaning device of the present invention and a power supply device are integrated.

FIG. 8 is an explanatory diagram for using heat generated from a power supply device.

FIG. 9 is a cross-sectional view showing another example of the horizontal opening integrated transfer box of Reference Example 4.

FIG. 10 is a side view of FIG. 9;

FIG. 11 is a cross-sectional view showing another example of the horizontal opening integrated transfer box of the present invention.

FIG. 12 is a cross-sectional view illustrating another example of the horizontally-opening integrated transfer box of the present invention.

FIG. 13 is a cross-sectional view illustrating an example of an open cassette storage type horizontal opening transport box of Reference Example 5.

FIG. 14 is a cross-sectional view illustrating an example of an open cassette storage type bottom-opening transport box of Reference Example 6.

FIG. 15 is a graph showing a change in a contact angle (degree) depending on a holding time (day).

FIG. 16 is a graph showing a change in a contact angle (degree) according to a holding time (day).

FIG. 17 is a graph showing a change in non-methane hydrocarbon concentration (ppm) depending on a retention time (hour).

FIG. 18 is a schematic view showing air cleaning in a conventional clean room.

[Description of References] 10: box, 11: charging circuit, 12: battery,
13: power supply, 14: power supply device, 15: electronic component (heat generation), 16: heat sink, 17: wall surface, 18: heat conductive sheet, 19: electronic component (less heat generation), 20: wiring board, 21 : Wafer transfer box, 22: wafer, 23:
Box door, 24: Wafer holding seal, 25: Seal material, 26: Robot flange, 27: UV lamp, 2
8: Photocatalyst, 29: Photoelectron emission material, 30: Photoelectron emission electrode, 31: Charged particle collecting material, 33: Photoelectron, 34
_1-6 : air flow, 35: light shielding material, 36: partition plate, 3
7: Kinematic coupling, 38: Open cassette

──────────────────────────────────────────────────続 き Continuation of the front page (72) Inventor Hirotaka Hirose 24-504, 3-chome, Hakushima-kugen-cho, Naka-ku, Hiroshima-shi, Hiroshima (56) References JP-A-4-266146 (JP, A) JP-A-4-179146 (JP, A) JP-A-9-205046 (JP, A) JP-A-9-168722 (JP, A) JP-A-4-218941 (JP, A) A) Jikai Sho 62-129246 (JP, U) JP-B 6-74909 (JP, B2) JP-B 3-5859 (JP, B2) (58) Fields surveyed (Int. Cl. ⁷ , DB name) ) H01L 21/68 B65D 85/86

Claims (1)

(57) [Claims] In a semiconductor substrate transport box having an opening / closing mechanism through which a semiconductor substrate can be moved in and out , one of the boxes is provided.
On one side, a gas purifying device using a photoelectron or a photocatalyst by irradiating light for cleaning the inside of the box, and a power supply device with a battery mounted charging function for supplying power to the device, the box is detachably attached to the box. Deployed as an integrated gas purification unit , the gas flow path is
Cleaned gas is passed from the top of the unit to the box.
It is supplied to the upper part and passes through the gap between the stored semiconductor substrates.
From the bottom of the box to the bottom of the unit
The gas cleaning unit is configured to include a power supply device.
Radiator to transfer the heat generated by the gas to the gas purifier
Comprising conveying box for a semiconductor substrate according to claim Rukoto.