JP3289535B2 - Photoelectric conversion device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photoelectric conversion device, and more particularly, to a photoelectric conversion device having a color filter.

[0002]

2. Description of the Related Art Conventionally, MOS type photo sensors and CCD image sensors have been known as photoelectric conversion devices.
For example, as a MOS type photo sensor, there is a known two-dimensional contact type color image sensor as shown in FIG.
As shown in FIG. 1, the structure of the two-dimensional contact type color image sensor is such that a plurality of lower gate electrodes 2 are formed in a pattern on a pixel region of a glass substrate 1 and a lower gate insulating film 3 is formed on the entire lower surface of the pixel region. Is formed. Then, on the lower gate insulating film 3, for example, intrinsic a-S
An i: H (hydrogenated amorphous silicon) photoelectric conversion semiconductor layer 4 is patterned so as to correspond to the lower gate electrode 2 described above. This photoelectric conversion semiconductor layer 4
A source region S and a drain region D made of a doped amorphous silicon film are formed at a predetermined distance from each other. The source electrode 5 is located on the source region S.
However, a drain electrode 6 is formed on the drain region D. On these structures, an upper gate insulating film 7 is formed over the entire pixel region. Further, on the upper gate insulating film 7, an upper gate electrode 8 corresponding to each photoelectric conversion semiconductor layer 4 is formed, and a plurality of photosensor sections 9 are configured. And FIG.
As shown in FIG. 1, a color filter 10 is arranged so as to correspond to the photosensor section 9 to constitute a two-dimensional contact type color image sensor. In addition, the color filter 10 includes an R (red) filter unit 10 a and a G (green) filter unit 1 for one photosensor unit 9.
0b and one of the B (blue) filter units 10c are arranged so as to correspond to each other. As shown in FIG. 6, the channel length (CL) and the channel width (CW) of the MOS transistor having the upper gate electrode 8 as a gate.
Are set to have the same dimensions in all the photosensor sections 9.

FIG. 7 is a graph showing the spectral characteristics of a commonly used color filter. As can be seen from this graph, the incident light is the R, G, B filter unit 10
a, attenuated by 10b, 10c and transmitted, B (blue)
Is about 460 nm, G (green) is about 540 nm, and R (red) is about 650 nm.
nm wavelength. FIG. 8 is a graph showing the relative sensitivity with respect to wavelength of a photosensor using amorphous silicon as a photoelectric conversion semiconductor layer. In this graph,
The solid line indicates the relative sensitivity according to the wavelength of the amorphous silicon visible light sensor. Here, the visible light is attenuated by the R, G, and B filter units 10a, 10b, and 10c, respectively, and is separated into each color and is incident on each photoelectric conversion semiconductor layer 4. Therefore, each color of each photoelectric conversion semiconductor layer 4 Is proportional to the sum of the product of the transmittance of the color filter at a predetermined wavelength and the relative sensitivity of amorphous silicon at the predetermined wavelength for the wavelength range of each color. Therefore, the sensitivity of the light transmitted by the color filter of the photoelectric conversion semiconductor layer 4 is R, G, even though the relative sensitivity peak of the visible light of the photoelectric conversion semiconductor layer 4 is in the G (green) wavelength region. , B in this order. In such a photoelectric conversion device having a color filter, the relative amount of the wavelength region of each color of the incident light and the amount of charge formed in the semiconductor layer according to the sensitivity of each color of the photoelectric conversion semiconductor layer 4 are reduced. Is not proportional. As a result, when a color filter having R, G, and B filter portions is attached to a photosensor using amorphous silicon as a photoelectric conversion semiconductor layer, it is necessary to compensate for a difference in sensor ON current resulting from a difference in each spectral characteristic. . Therefore, the photo sensor unit 9 shown in FIGS.
The spectral characteristics are compensated by changing the voltage between the source and the drain according to the color of the corresponding filter unit.

[0004]

However, in the above-mentioned prior art, the drive circuit is provided with a drive voltage corresponding to each color in order to properly use the voltage between the source and the drain of the photosensor section according to the color of the color filter. Has to be generated. For this reason, a driving circuit corresponding to each color is required, and thus there is a problem that the cost is increased and the device itself is enlarged. SUMMARY OF THE INVENTION It is an object of the present invention to provide a small-sized, low-cost photoelectric conversion device that can prevent variations in sensor sensitivity due to differences in spectral characteristics of color filters.

[0005]

Therefore, according to the present invention, a channel forming region of a MOS transistor formed in a thin film semiconductor layer is formed as a light receiving portion, and a plurality of the MOS transistors are provided. In a photoelectric conversion device in which a color filter having a plurality of color filter units is disposed to face each other, the light receiving unit includes the plurality of filters.
The plurality of filters according to the relative light wavelength transmission characteristics of each of the sections.
Phase for light that has passed through the
Photosensitivity per unit area based on optical wavelength sensitivity characteristics
(Channel width) of the channel forming region in the ascending order /
Increasing the value of (channel length) is a solution. The invention according to claim 2 is characterized in that the MOS transistor has a gate electrode on the upper and lower sides of the channel formation region with a gate insulating film interposed therebetween. The invention according to claim 3 is characterized in that the thin film semiconductor layer is an amorphous silicon film. According to a fourth aspect of the present invention, the color filter is an R color filter.
(Red), G (Green), and B (Blue) filter sections, and a light receiving section corresponding to the B filter section, a light receiving section corresponding to the G filter section, and a light receiving section corresponding to the R filter section. It is characterized in that the value of (channel width) / (channel length) is increased in this order. The invention according to claim 5 is
A source electrode and a drain electrode are disposed opposite to each other with a predetermined interval with the photoelectric conversion semiconductor layer interposed therebetween, and the photoelectric conversion semiconductor layer and the upper and lower sides of the photoelectric conversion semiconductor layer with insulating films interposed therebetween. A first gate electrode and a second
A photoelectric conversion device including a plurality of photosensor units provided with gate electrodes, wherein a color filter is provided on the photosensor units.
A filter unit, and the photo sensor unit includes the color sensor.
According to the relative light wavelength transmission characteristics of each of the filter sections.
Light transmitted through the color filter section at a predetermined transmittance
Per unit area based on relative light wavelength sensitivity characteristics
Are characterized by increasing the value of (channel width) / (channel length) of the photoelectric conversion semiconductor layer in order of decreasing light receiving sensitivity . The invention according to claim 6 is characterized in that a plurality of filter sections having different wavelength ranges to be transmitted are provided corresponding to the plurality of photosensor sections. Claim
In the invention described in Item 7, the sensitivity of the photoelectric conversion semiconductor layer in the wavelength range of each color is a wavelength of each color of the product of the transmittance of the corresponding filter portion at a predetermined wavelength and the relative sensitivity of the photoelectric conversion semiconductor layer at the predetermined wavelength. It is characterized by being proportional to the sum of the areas.

[0006]

According to the first to fourth aspects of the present invention, light having a low light-receiving sensitivity per unit area of light transmitted through the filter is determined in accordance with the relative light wavelength sensitivity characteristics of the light-receiving portion and the relative light wavelength transmission characteristics of the filter. In order of parts (channel width)
By increasing the value of / (channel length), all of the color filters corresponding to a plurality of colors are selected according to the amount of light transmitted through the color filter and the sensitivity of the light receiving unit that receives the light in the light wavelength region. The effect of adjusting the sensor ON current of the light receiving section is obtained. Therefore, for example, R, G,
This has the effect of suppressing the variation in the sensor ON current due to the spectral characteristics of each color B. Further, the thin film semiconductor layer is an amorphous silicon film, and the color filter is
When R (red), G (green), and B (blue) filter sections are provided, a light receiving section corresponding to the B filter section, a light receiving section corresponding to the G filter section, and a light receiving section corresponding to the R filter section are provided. By increasing the value of (channel width) / (channel length) in the order of the parts, it is possible to suppress the variation of the ON current due to the difference in the relative sensitivity.

According to the fifth aspect of the present invention, the relative light wave
Low variation in sensor current due to differences in long-sensitivity characteristics
Can be obtained.

[0008]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The details of the photoelectric conversion device according to the present invention will be described below with reference to the embodiments shown in the drawings. (Embodiment 1) FIG. 1 is a sectional view showing a main part of Embodiment 1 in which the present invention is applied to a so-called double gate MOS photosensor. In this embodiment, as shown in the figure, a plurality of lower gate electrodes 12 are formed on the glass substrate 11 in a pattern corresponding to the color filters 20 of each color.
Then, a lower gate insulating film 13 is formed so as to cover the glass substrate 11 and the lower gate electrode 12. On the lower gate insulating film 13, photoelectric conversion semiconductor layers 14 a, 14 b, and 14 c made of, for example, intrinsic a-Si: H (hydrogenated amorphous silicon) are formed so as to correspond to the lower gate electrode 12. The pattern is formed. These photoelectric conversion semiconductor layers 14a, 14
Above b and 14c, a source region S and a drain region D made of a doped amorphous silicon film are formed at a predetermined distance from each other. A source electrode 15 is formed on the source region S, and a drain electrode 16 is formed on the drain region D. Also, above these structures,
A transparent upper gate insulating film 17 is formed over the entire pixel region. Further, on the upper gate insulating film 17, the respective photoelectric conversion semiconductor layers 14a, 14b, 14
The upper gate electrodes 18a, 18b, and 18c corresponding to the photosensors 19 are formed.
a, 19b, and 19c. The photosensitivity characteristics per unit area of a region of the photosensor portions 19a, 19b, and 19c that receives light of the photoelectric conversion semiconductor layer that does not pass through the color filter 20 are as shown in FIG. And
A color filter 20 is arranged so as to correspond to the photosensor sections 19a, 19b, and 19c, and a two-dimensional contact type color image sensor as a photoelectric conversion device is configured. The color filter 20 includes an R (red) filter unit 20a for the photosensor unit 19a, a G (green) filter unit 20b for the photosensor unit 19b, and a B (blue) filter unit for the photosensor unit 19c. 20c are arranged correspondingly. This color filter 20 has transmission characteristics as shown in FIG.

In particular, in the present embodiment, as shown in FIG. 2, the upper gate electrodes 18a, 18b, 18c of the photosensor portions 19a, 19b, 19c are connected to the GL, and the photoelectric conversion semiconductor layers 14a, The channel widths of the MOS transistors corresponding to the R filter unit 20a, the G filter unit 20b, and the B filter unit 20c are set to be CL1>
CL2> CL3 is set. In FIG. 2, the source electrode 15 and the drain electrode 1
6 and the like are omitted. In the present embodiment, the color filter 20 having a characteristic shown in the graph of FIG. 7 is used, and the photosensors 19a, 19b, and 19c as the light receiving units are indicated by solid lines in the graph of FIG. The present invention is applied to the case where the sensitivity characteristics as shown are exhibited.

Next, the operation and operation of the photoelectric conversion device of this embodiment will be described. First, for example, the upper gate electrode 18
a, 18b and 18c are set to 0V, and the lower gate electrode 12 is set to 10
When V and the drain voltage VD are applied to 10 V, a drain current IDS flows in the channel region of the photoelectric conversion semiconductor layer 14. At this time, Si—Si in the intrinsic amorphous silicon crystal is bonded by a pair of electrons, and the electrons are easily separated from the bond by thermal energy or the like to become free electrons. Holes where the free electrons escape are holes.

Next, the upper gate electrodes 18a, 18b,
When 18c is changed from 0V to −20V, the electric field formed at this time causes the photoelectric conversion semiconductor layers 14a, 14b, 14
The hole region (depletion layer) spreads to the upper gate electrodes 18a, 18b, 18c side of c. For this reason, the region of electrons flowing between the source and the drain is reduced. At this time, when light is irradiated from the upper gate electrodes 18a, 18b, and 18c, Si-Si bonds on the upper gate electrodes 18a, 18b, and 18c of the photoelectric conversion semiconductor layers 14a, 14b, and 14c are excited, and electrons are emitted. Hole pairs are formed. Here, the electrons flow immediately (there is no effect as the drain current). At this time, the upper gate electrodes 18a, 18b, 1
Although -20 V is applied to 8c, the amount of holes that can be held at this voltage is limited (does not change). That is, the already formed depletion layer cannot be sufficiently maintained. Therefore, the current flowing between the source and the drain (the drain current I
DS) changes according to the amount of light incident through the color filter 20, and detects this. Then, when the upper gate current 18 is returned to 0 V, the held hole region is extinguished and refreshed.

As shown in FIG. 7, the wavelength region transmitted by the color filter 20 is different for each filter unit, and the overall transmission amount is determined by the R filter unit 20a, the B filter unit 20c, and the G filter unit 20b. It is increasing in order. On the other hand, as shown in FIG. 8, the light sensitivity characteristics per unit area of the light receiving regions of the photosensor portions 19a, 19b, and 19c without the color filters are about 550n.
m is the peak. Therefore, the G wavelength region can be sensed most sensitively as compared with R and B. That is, due to these correlations, the light sensitivity characteristics per unit area of the region that receives the light transmitted through the color filter 20 become more sensitive in the order of R, G, and B. Therefore, the R filter unit 20a, the G filter unit 20b, and the B
The photo sensor sections 19a, 1 corresponding to the filter section 20c
The channel lengths CL1, CL2, CL3 of 9b, 19c are
CL1 is set to be the longest and CL3 is set to be the shortest, and the upper gate electrodes 18a, 18b, and 18c are shaped according to the channel lengths CL1, CL2, and CL3. Note that the photoelectric conversion semiconductor layers are also 14a, 14b, and 14c.
In the order of channel length.

The light sensitivity characteristic per unit area of the region where the photoelectric conversion semiconductor layer 14a corresponding to the R filter section 20a receives light transmitted through the R filter section 20a is the most sensitive, but the channel length CL1 is the longest. Since the region where the electron-hole pairs are excited by the incidence of light is small, the drain current IDS is relatively hard to flow. Also, B
The light sensitivity characteristic per unit area of the region where the photoelectric conversion semiconductor layer 14c corresponding to the filter unit 20c receives light transmitted through the B filter unit 20c is the weakest, but the channel length CL
3 is the shortest, and the region where the electron-hole pairs are excited by the incidence of light is large, so that the drain current IDS flows relatively easily. The light sensitivity characteristics per unit area of the region where the photoelectric conversion semiconductor layer 14b corresponding to the G filter portion 20b receives the light transmitted through the G filter portion 20b are determined by the characteristics of the photoelectric conversion semiconductor layer 14a and the photoelectric conversion semiconductor layer 14c.
And the length of the channel length CL2 is C
The size of the region which is intermediate between L1 and CL3 and in which the electron-hole pair is excited by the incidence of light is the photoelectric conversion semiconductor layer 14.
Since the drain current IDS of the photoelectric conversion semiconductor layer 14b is relatively between the region a and the region 14c, the drain current IDS of the photoelectric conversion semiconductor layer 14b relatively corresponds to the drain current IDS of the photoelectric conversion semiconductor layer 14a and the B filter portion 20c. And the drain current IDS of the photoelectric conversion semiconductor layer 14c. As described above, in the present embodiment, the channel length, the channel region, and the gate electrode are set according to the light transmission characteristics of the color filter 20 and the light sensitivity characteristics of the photosensor unit. Sensitivity characteristics (relative spectral characteristics)
The variation of the sensor ON current due to the difference
The processing dimensions of the drain D, the photoelectric conversion semiconductor layer 14, and the gate electrode can be kept low only by changing the setting in the photolithography process. For this reason, it is not necessary to use the input current and voltage of the sensor properly depending on the color, so that the drive circuit and the like can be shared, and there is no need to provide a separate drive circuit. There are advantages.

(Embodiment 2) In Embodiment 1, the channel lengths of the photosensor sections 19a, 19b, and 19c are set to CL1 and CL1 in accordance with the color filter sections 20a, 20b, and 20c for each color.
The sensor ON current was compensated for instead of CL2 and CL3.
In the second embodiment, the color filter units 20a and 20
By changing the channel width according to b and 20c, the sensor ON current is compensated. FIG. 3 is a cross-sectional view illustrating a main part of the present embodiment. In this embodiment, as in the first embodiment, the upper and lower gate electrodes are a-
The photoelectric conversion semiconductor layer made of Si: H is arranged so as to sandwich the photoelectric conversion semiconductor layer. Then, an R filter unit, a G filter unit, and a B filter unit are arranged so as to correspond to these photosensor units. Here, as shown in FIG. 3, the channel widths CW1, CW2, and CW3 of the photosensor units corresponding to the R filter unit, the G filter unit, and the B filter unit are set to CW1. Shortest, CW
3 is set to be the longest. Note that the photoelectric conversion semiconductor layers are also set to be larger in the channel width direction in the order of 14a, 14b, and 14c.

The light sensitivity characteristic per unit area of the region where the photoelectric conversion semiconductor layer 34a corresponding to the R filter portion 20a receives the light transmitted through the R filter portion 20a is the most sensitive, but the channel width CW1 is the shortest. , Drain current IDS
Are relatively difficult to flow. In addition, although the photoelectric sensitivity characteristics per unit area of the region where the photoelectric conversion semiconductor layer 14c corresponding to the B filter unit 20c receives light transmitted through the B filter unit 20c is the weakest, the drain width is the largest because the channel width CW3 is the longest. The current IDS is relatively easy to flow. The light sensitivity characteristic per unit area of the region where the photoelectric conversion semiconductor layer 14b corresponding to the G filter unit 20b receives light transmitted through the G filter unit 20b is as follows.
4A and the characteristic of the photoelectric conversion semiconductor layer 14c, but since the length of the channel width CW2 is intermediate between CW1 and CW3, the drain current IDS of the photoelectric conversion semiconductor layer 14b is relatively smaller than that of the R filter. Drain current IDS of the photoelectric conversion semiconductor layer 14a corresponding to the portion 20a and the B filter portion 2
It is intermediate with the drain current IDS of the photoelectric conversion semiconductor layer 14c corresponding to 0c.

Accordingly, the photosensors corresponding to the color filters of the respective colors set the channel width and the channel region in accordance with the light transmission characteristics of the color filters, so that the same amount of light is emitted from above the color filters. If the same drain current IDS can flow, the voltage generation circuit can be shared and the device can be downsized.

(Embodiment 3) This embodiment is an example in which the present invention is applied to a CCD image sensor as a photoelectric conversion device. FIG. 4 is a cross-sectional view illustrating a main part of the present embodiment. The CCD image sensor of this embodiment is an N-type silicon substrate 2
A first P well 22 is formed in one pixel formation region, and a light receiving unit 23 and a charge transfer unit 24 for transferring charges accumulated in these light receiving units 23 are formed in the first P well 22 for each pixel. ing. Further, similarly to the first embodiment, the color filters 20 are opposed to each of the light receiving units 23 such that any one of the R filter unit 20a, the G filter unit 20b, and the B filter unit 20c corresponds to each other. .

The light receiving section 23 is formed by joining a P ⁺ layer 25 and an N ⁺ layer 26 from the surface side of the first P well 22.
It constitutes a photodiode. The charge transfer unit 2
4 has a channel stop layer 27 in a region adjacent to the P ⁺ layer 25 and the N ⁺ layer 26 of the light receiving section 23, and a region adjacent to the channel stop layer 27 and the N layer 28 and the second
A P-well 29 is formed by vertically joining, and a transfer gate electrode 31 is formed via a silicon nitride film 30 formed on the surface. A transparent insulating film 32 is deposited on the entire surface of the light receiving unit 23 and the charge transfer unit 24. Then, an Al light-shielding film 33 is formed in a portion other than the light receiving portion 23.

Although not shown, the shape of the light receiving portion 23 is rectangular when viewed in a plane, and the length of the side of all the light receiving portions 23 in the plane is, for example, the same for the vertical side and the horizontal side corresponds to the length. It is set differently depending on the color of the filter unit to be used. That is, in the present embodiment, the length (width) of the lateral side of the light receiving unit 23 that receives the light transmitted through the B filter unit 20c having a small relative sensitivity according to the relative light wavelength sensitivity characteristic of the photodiode formed on the silicon substrate. 3.) L3 is lengthened, and the area of the light receiving section 23 is increased. Further, the length L1 of the lateral side of the light receiving unit 23 that receives light transmitted through the R filter unit 20a having a high relative sensitivity is set to be short, and the light receiving unit 2
3 is made smaller. Further, the length L2 of the lateral side of the light receiving unit 23 that receives light transmitted through the G filter unit 20b having a sensitivity intermediate between R and B is set to an intermediate length between L1 and L3. Is set to an intermediate size between the former two.

With this configuration, in the present embodiment, it is possible to suppress the variation in the color sensitivity between the light receiving unit 23 and the filter unit of a different color. Further, in this embodiment, in order to suppress such variation in color sensitivity in the light receiving unit 23, it is only necessary to change the processing pattern of the Al light-shielding film 33.

Although the first to third embodiments have been described above, the present invention is not limited to these embodiments, and various design changes accompanying the gist of the configuration are possible. For example, in the first embodiment, the present invention relates to an MO having a double gate structure.
Although the present invention has been applied to the S-type photosensor, the present invention may be applied to a MOS-type photosensor having a so-called single gate structure having a single gate electrode.

Further, in the first embodiment, the channel width is made constant to make the channel length different, and in the second embodiment, the channel length is made constant and the channel width is made different, so that ta
ga In accordance with the relative light wavelength sensitivity characteristic of the light receiving section, the order of the light receiving sensitivity of light transmitted through the filter section is ascending (channel width) /
Both the channel width and the channel length may be set so as to increase the value of (channel length).

Further, in the third embodiment, the length (width) of the horizontal side of the light receiving section 23 is set to be different between the light receiving sections. However, the length of the vertical side may be changed. Further, in the above-described first to third embodiments, the present invention is applied to the case where the spectral characteristics of the used color filter and the light receiving unit are as shown in FIG. The setting of the value of (width) / (channel length) and the value of the light receiving area need to be appropriately changed.

[0024]

As is apparent from the above description, according to the first to fourth aspects of the present invention, the variation of the sensor ON current due to the difference in the spectral characteristics of each color of the color filter can be reduced by processing the source and drain patterns. It can be easily suppressed by simply changing it. According to the fifth aspect of the present invention,
The effect of easily suppressing the variation in the color sensitivity between the light receiving sections by simply changing the processing pattern of the light shielding film is obtained. Therefore, unlike the related art, it is not necessary to properly use the input current, voltage, and the like of the sensor depending on the color of the filter. In addition, there is an effect that the cost of the driving circuit can be reduced and unnecessary TAB can be reduced.

[Brief description of the drawings]

FIG. 1 is a sectional view of a main part of a first embodiment of the present invention.

FIG. 2 is an explanatory plan view of Embodiment 1 of the present invention.

FIG. 3 is a sectional view of a main part of a second embodiment of the present invention.

FIG. 4 is a sectional view of a main part of a third embodiment of the present invention.

FIG. 5 is a cross-sectional view of a main part of a conventional photoelectric conversion device.

FIG. 6 is an explanatory plan view of a conventional photoelectric conversion device.

FIG. 7 is a graph showing a relationship between a wavelength and a transmittance of a color filter.

FIG. 8 is a graph showing a relationship between relative sensitivity and wavelength of a light receiving unit using amorphous silicon for a photoelectric conversion layer.

[Explanation of symbols]

 S source D drain 14a, 14b, 14c Photoelectric conversion semiconductor layer 18a, 18b, 18c Upper gate electrode 19a, 19b, 19c Photosensor 20 Color filter 20a R filter unit 20b G filter unit 20c B filter unit 23 Light receiving unit 33 Al light shielding film

Continuation of the front page (56) References JP-A-62-289087 (JP, A) JP-A-62-242690 (JP, A) JP-A-62-278876 (JP, A) JP-A-6-216359 (JP) JP-A-6-296036 (JP, A) JP-A-6-133224 (JP, A) JP-A-63-226061 (JP, A) JP-A-6-204550 (JP, A) (58) Field surveyed (Int.Cl. ⁷ , DB name) H01L 27/146 H01L 27/14 H01L 27/148 H01L 31/10

Claims (7)

(57) [Claims] 1. A MOS transistor formed in a thin film semiconductor layer has a channel forming region as a light receiving portion. A plurality of MOS transistors are provided, and a color filter having a filter portion of a plurality of colors faces the light receiving portion. In the photoelectric conversion device arranged, the light receiving unit is configured to output relative light waves of each of the plurality of filter units.
Each of the plurality of filter sections is provided according to the long transmission characteristic.
Relative light wavelength sensitivity to light transmitted at a constant transmittance
Based on the light receiving sensitivity per unit area based on
A photoelectric conversion device characterized in that the value of (channel width) / (channel length) in the channel formation region is increased. 2. The photoelectric conversion device according to claim 1, wherein the MOS transistor has a gate electrode on the upper and lower sides of the channel formation region with a gate insulating film interposed therebetween. 3. The photoelectric conversion device according to claim 1, wherein the thin film semiconductor layer is an amorphous silicon film. 4. The color filter comprises R (red),
It has G (green) and B (blue) filter sections.
The value of (channel width) / (channel length) is increased in the order of the light receiving section corresponding to the filter section of No., the light receiving section corresponding to the G filter section, and the light receiving section corresponding to the R filter section. The photoelectric conversion device according to claim 1. 5. A source electrode and a drain electrode are disposed opposite to each other with a predetermined interval with a photoelectric conversion semiconductor layer interposed therebetween.
A photoelectric conversion device comprising a plurality of photosensor portions on which first and second gate electrodes opposed to the photoelectric conversion semiconductor layer are disposed on upper and lower sides of the photoelectric conversion semiconductor layer via insulating films, respectively. And a color filter section is provided on the photosensor section.
The photo sensor unit is provided with each of the color filter units.
The color filter section according to various relative light wavelength transmission characteristics.
Is a relative light wave with respect to the light transmitted at a predetermined transmittance.
Low light sensitivity per unit area based on long sensitivity characteristics
A photoelectric conversion device wherein the value of (channel width) / (channel length) of the photoelectric conversion semiconductor layer is increased in the following order. 6. In correspondence with the plurality of photo sensor units,
The photoelectric conversion device according to claim 5 , wherein a plurality of filter units having different wavelength regions to be transmitted are provided. 7. The sensitivity of the photoelectric conversion semiconductor layer according to the wavelength range of each color is defined by the product of the transmittance of the corresponding filter unit at a predetermined wavelength and the relative sensitivity of the photoelectric conversion semiconductor layer at the predetermined wavelength. The photoelectric conversion device according to claim 6 , wherein the photoelectric conversion device is proportional to the sum of the minutes.