JP3286736B2 - Manufacturing equipment for magnetic recording media - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

This invention relates to a Cr or Cr alloy layer
And a CoCrTa layer .

[0002]

2. Description of the Related Art Conventionally, as shown in FIG. 7, a disk-shaped magnetic recording medium has a substrate 1 made of a non-magnetic material such as aluminum (hereinafter, a substrate made of a non-magnetic material is simply referred to as After forming a NiP plating layer 2 on the surface of the substrate, a base layer 3 of Cr or a Cr alloy and a C
An oCrTa layer 4 is sequentially provided (see, for example, JP-A-3-49020). The underlayer 3 or CoCrT
The a layer 4 employs a film forming technique by a sputtering method, and in some mass-produced facilities, a continuous processing method in which a substrate passes through a sputtering chamber is used. The Co
The CrTa layer 4 constitutes a magnetic film layer and is made of CoCrTa.
CoCrTaNi, CoCrTaPt, CoCr
TaW, CoCrNi, CoCrNiPt, or CoC
In some cases, an rNiW film was used. For example, Ni-P
Aluminum alloy substrate with outer surface (outer diameter 95mm, inner
Lapping surface of 25mm in diameter and 1.3mm in thickness)
After precision polishing with a machine, a texturing process is performed.
Cr film and CoCrTa film on the non-magnetic material substrate obtained by
(Composition (atomic%) CoCr ₁₄ Ta ₃ )
A known magnetic recording medium is known (Japanese Patent Laid-Open No. 4-29211).
issue). Also, the inner and outer diameters of an Al alloy disk are
Process, grinding and polishing the surface to make it flat.
About 20μm thick Ni-P alloy layer by electroless plating
Formed and polished to a thickness of about 15μm, with surface roughness centered
The line average roughness Ra should be about 20 angstroms.
Mirror polished, and textured, surface roughness
Is set to be about 70 angstroms in Ra.
The plate has a Cr underlayer and a composition of Co- ₁₂ Cr- ₂ Ta.
Magnetic layer in which a CoCrTa layer and a protective layer made of C are sequentially formed.
An air recording medium is known (Japanese Unexamined Patent Publication No. 3-127329).
issue). Further, the aluminum substrate was processed to a predetermined thickness.
After that, the surface is mirror-finished and then used as a primary underlayer.
A Ni-P alloy layer is formed or a first underlayer (Ni
-P alloy layer) without forming, mirror-finished aluminum
In the case where a Cr layer is provided directly as an underlayer on the substrate,
Layer, Co: 70 to 95 atomic%, Cr: 520 atomic%, T
a: a CoCrTa layer having a composition of 0.1 to 10 atomic% is sequentially formed
A magnetic recording medium on which a film is formed is known (Japanese Patent Laid-Open No. 2-15 / 1990).
No. 4323).

[0003]

In such a magnetic recording medium, the coercive force Hc of the magnetic film layer is increased in order to increase the recording density.
However, at present, the maximum coercive force Hc of a CoCrTa film is 1500 Oe.
In order to exceed this limit, attempts have been made to replace the magnetic film layer with a Pt-based alloy material or to apply a bias voltage to the substrate during sputtering.

However, the use of a Pt-based alloy material as a magnetic material requires a Pt-based alloy target, and the cost (more than 50 times that of the Co-based) is so high that it has been difficult to adopt it.
Further, an attempt to apply a bias voltage to the substrate during sputtering can only improve the coercive force Hc to about 1800 Oe (in the case of a CoCrTa film), and could not expect such an effect. Furthermore, in a mass-production type facility where a substrate is continuously processed so that the substrate passes through a sputtering chamber,
Since the substrate holder moves, it is difficult to insulate it from the ground potential, and it is difficult to apply a stable bias voltage.

[0005]

Means for Solving the Problems] The present invention has been made in consideration of as the, Cr also having a high coercive force Hc
Indicates that a Cr alloy layer and a CoCrTa layer are alternately laminated.
And its object is to provide an apparatus suitable for the manufacture of magnetic recording medium that.

[0006] The Cr or C of the present invention which achieves the above object.
An apparatus for manufacturing a magnetic recording medium in which an r alloy layer and a CoCrTa layer are alternately stacked is configured as follows.
Things. Cr or Cr alloy layer of the present invention and CoCrT
Apparatus for manufacturing magnetic recording medium in which a-layers are alternately stacked
The heating chamber, the base chamber, and the magnetic film spa
The chambers are connected sequentially to the
Along these chambers,
Substrate holder that supports a substrate made of non-magnetic material inside
From the heating chamber, a base chamber, a magnetic film
Equipped with a transfer mechanism to sequentially transfer to the sputtering chamber
Adjacent to the heating chamber and the underlying chamber
Section, adjacent to the base chamber and the magnetic film sputtering chamber
Part, the outer wall of the heating chamber and the magnetic film
The transfer mechanism is provided on the outer wall of the putter chamber, respectively.
Pass through the substrate holder when transferring the substrate holder
In this way, a gate valve is provided. Previous
In the description, both sides facing the inside of the magnetic film sputtering chamber
Each side wall faces the inside of the magnetic film sputtering chamber.
On the other side, depending on the target holder, a Cr target or
Supports a Cr alloy target, and
Direct or high-frequency power through the cathode body
Even number of cathodes
CoCrT by target holder on the side facing inward
a Supporting an alloy target, with respect to the target,
DC through the cathode body power or to introduce a high-frequency power
Even number of other cathodes, each at equal intervals in the circumferential direction
Every other is provided. Also, inside the base chamber
On both sides facing the side,
Cr target is supported by the target holder on the other side.
Through the cathode body against the Cr target.
The cathode that introduces DC power or high-frequency power
Installed on one side wall of the magnetic film sputtering chamber
Casor with Cr target or Cr alloy target
With a CoCrTa alloy target
Number equal to or greater than the total number of
They are provided at equal intervals in the circumferential direction. Furthermore, substrate holder
Is a rotatable disk that is insulated from ground potential.
Thus, at least on the inner wall of the base chamber
More than the number of cathodes
Are formed at equal intervals in the circumferential direction.
The three spring pieces provided along the
A circular non-magnetic substrate can be held in the center of the hole
At the same time, the center is the center of the rotational movement of the substrate holder.
And a support shaft with a coupling at the tip.
You. Then, the base chamber and the magnetic film sputtering chamber
The bars are at least centrally located on one of the side walls,
The step rotation mechanism,
Inside of underlayer chamber and magnetic film sputtering chamber
Output that extends inward and is interposed in the middle
The shaft is configured to move forward and backward, and the substrate holder is
When transferred into the chamber and when the magnetic film sputters
When transferred into the chamber,
Connects to and disconnects from the coupling at the end of the support shaft of the substrate holder
It is possible. In the base chamber,
On both sides of the position where the plate holder is transferred,
With a Cr target deployed on the inside wall
An opening is provided at each position facing the plurality of cathodes.
And the center of the step rotation mechanism.
A through hole is provided for the output shaft to move when it moves back and forth.
Shield plate is installed and moved into the underlying chamber.
The plurality of through holes of the substrate holder sent are
The plate holder is rotated to open multiple shield plates.
Only the one that hits the position facing the mouth is
Cr that are deployed on the inside wall of the base chamber over via
It can face each target, and other than the substrate holder
The through hole is covered by the shield plate
It has become. In addition, the magnetic film sputtering chamber
Magnetic film on both sides of the position where the substrate holder is transferred
Cr tar on the inner wall of the sputtering chamber
Multiple Casaws with Get or Cr Alloy Target
And a plurality of cards with CoCrTa alloy targets.
Each has an opening at the position facing the sword
At the same time, the output shaft of the step rotation mechanism
A shield provided with a through hole to be inserted when retreating
Plate is provided and moved into the magnetic film sputtering chamber.
The plurality of through holes of the substrate holder sent are
The plate holder is rotated to open multiple shield plates.
Only the one that hits the position facing the mouth is
Is installed on the inner wall of the magnetic film sputtering chamber through
Cr target or Cr alloy target and C
oCrTa alloy target
Other through-holes of the plate holder are covered by the shield plate.
It is configured to be hidden. Thus, the plurality of
Holds a circular non-magnetic substrate in the center of the through hole
When the substrate holder is transferred into the underlying chamber
At this time, a step connected to the coupling at the tip of the support shaft
Input from the output shaft of the
The plate holder rotates and stops in the circumferential direction, and
Cr film is formed as an underlayer on a non-magnetic substrate
At this time, the base chip is passed through a plurality of openings of the shield plate.
Cathode Cr tar on the inner wall of chamber
Multiple circular non-magnetic substrates facing the get
So that they respectively face the Cr target statically.
It has become. Also, a circle is formed at the center of the plurality of through holes.
The substrate holder that holds the non-magnetic substrate
When transferred into the sputter chamber,
Step rotation connected to the coupling at the end of the support shaft
Receiving input from the output shaft of the mechanism, a disc-shaped substrate holder
Perform a rotational movement and stop in the circumferential direction,
Cr or Cr alloy layer or CoCrT
When the a layer is formed, a plurality of openings in the shield plate are formed.
Provided on the inner wall of the magnetic film sputtering chamber
Cr target or Cr alloy target
Tsu circular non-magnetic material substrate made of multiple and opposing the DOO, Co
Multiple circular non-magnets facing a CrTa alloy target
At the same time, the material substrate is
Is used for Cr alloy target and CoCrTa alloy target
Statically opposed, at intervals of 1 to 10 seconds, Cr layer or
When the Cr alloy layer and the CoCrTa layer are formed, a disk is formed.
-Shaped substrate holder rotates in the circumferential direction and the Cr layer or
Next, the substrate on which the Cr alloy layer was formed was coated with CoCrTa.
Through a plurality of openings of the shield plate to the gold target
The substrate on which the CoCrTa layer has been formed is
To the Cr target or Cr alloy target.
To face each other through a plurality of openings in the
Is what it is.

The target may be arranged on one side of the substrate holder. However, it is preferable that a plurality of types of targets are arranged on both sides of the substrate holder so that films can be formed on both sides of the substrate.

In such an apparatus, a base chamber is provided.
And the magnetic film sputtering chamber is located at the center of the other side wall.
Each have a bias application power supply,
The side wall of the base chamber and the magnetic film sputtering chamber
The bias applied to insulate it from the side wall
Power source inward chamber and magnetic film sputtering
The output shaft extending inward of the member is movable back and forth,
When the substrate holder is transferred into the base chamber
And it has been transferred into the magnetic film sputtering chamber
At the center of the shield plate,
The through hole provided for insertion when the output shaft moves forward and backward
Via the other end of the support shaft of the substrate holder
Connection and disconnection
Te, the substrate holder may be a connected configuration a bias application power source.

In addition, a plurality of sputtering chambers are connected,
At least one of the sputtering chambers is configured as described above (a configuration for forming a CoCrTa film and a Cr or Cr alloy film), and is transported to transfer a substrate holder across all the sputtering chambers. By providing a mechanism, an underlayer and a surface protective film can be formed in another sputtering chamber.

[0010]

The Cr or Cr alloy layer of the present invention and CoCrTa
According to the magnetic recording medium manufactured by the magnetic recording medium manufacturing apparatus in which the layers are alternately stacked , the CoCrTa film has a plurality of layers, so that the thickness of each layer can be reduced, and the coercive force Hc can be reduced. Can be improved. The coercive force H
The relationship between c and the thickness of the CoCrTa film is shown in FIG.
As in the case of the rTa film, the coercive force Hc increases as the film thickness increases.
Has been found to be decreasing.

When the thickness of the CoCrTa film is reduced, Br · δ (Br
Is the residual magnetic flux density and δ is the film thickness), which lowers the reproduction output. However, in the present invention, the CoCrTa film is formed in a plurality of layers and the decrease in δ is eliminated, so that both the maintenance of the output characteristics and the improvement of the coercive force Hc are achieved. can do.

A CoCrTa film and a Cr or Cr alloy film (for example, a Cr—Mo film, a Cr—V film, a Cr—Mn film) are formed on a substrate.
Film), the CoCrTa film is altered by the interval of the film forming process or the atmosphere (type of gas) to which the CoCrTa film is exposed, and the squareness ratio in the magnetic hysteresis curve of the magnetic recording medium is deteriorated. There is. In this regard, according to the manufacturing apparatus of the present invention, C is applied in a short interval of about 1 to 10 seconds in one sputtering chamber.
oCrTa film and Cr or Cr alloy film (for example, Cr-
(Mo film, Cr-V film, Cr-Mn film, etc.) can be sequentially formed, so that the deterioration of the squareness ratio can be avoided.

Further, since during the sputtering to the target and opposite in a state of stopping the substrate, relates <br/> thickness direction of the CoCrTa film, will be able to film at a constant growth rate, homogeneous in the thickness direction the film It can be. Further, since the input power of each target can be controlled individually and independently, the film thickness can be adjusted with an accuracy of 10 Å or less.

[0014]

DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of an apparatus for manufacturing a magnetic recording medium having a CoCrTa film as a magnetic film will be described.

The apparatus comprises a heating chamber A, a base sputtering chamber B, and a magnetic film sputtering chamber C as shown in FIG.
It was assumed that it was connected continuously. A transfer mechanism 37 is provided along the continuous direction of the chambers, and the substrate holder 12 supporting the substrate can be sequentially transferred to the heating chamber A, the base sputtering chamber B, and the magnetic film sputtering chamber C. I have. Each of the chambers is provided with an exhaust unit 14, and the heating chamber A is adjacent to the base sputtering chamber B; the base sputtering chamber B is adjacent to the magnetic film sputtering chamber C; A gate valve 38 is provided on the outer wall of the film sputtering chamber C so that the substrate holder 12 on the transfer mechanism 37 can pass therethrough.

As shown in FIGS. 4 and 5, the sputtering chambers B and C have a structure in which a plurality of cathodes 13 are provided on a side wall of the sputtering chamber 11. Argon gas or the like is introduced into the sputtering chamber 11 constituting the sputtering chamber through a gas introduction system (not shown) so that the gas atmosphere can be adjusted to a predetermined pressure.

The substrate holder 12 is a disk-shaped member that is rotatably supported by support legs 17 erected on a running member 15 running along the transfer mechanism 37 via an insulating material 16. Along, eight holes at equal intervals, through holes 18,
The through holes 18 are formed as substrate holding portions.
Along the inner periphery of the through hole 18 serving as the substrate holding portion,
9 and 19 are provided so that the circular substrate 1 can be held at the center of the through hole 18.

At both ends of the support shaft 20 at the center of the substrate holder 12, couplings 21 and 22 are provided, respectively. One coupling 21 is coupled to an output shaft 24 of a step rotating mechanism 23 installed on one side wall of the sputtering chamber 11, and the other coupling 22 is connected to a bias application power source installed on the other side wall of the sputtering chamber 11. 25
Is connected to the output shaft 26.

The output shaft 24 of the step rotating mechanism 23 has an insulating material 27 interposed therebetween and is insulated at the distal end. The output shaft 24 is step-rotated by the step rotating mechanism 23 as indicated by arrow 28, As shown in FIG. 29, it is configured such that it can move forward and backward to connect or disconnect from the coupling 21.

On the other hand, the output shaft 26 of the bias applying power supply 25
Is an insulating material 30 provided on the side wall and is insulated from the ground potential.
It is configured so that it can be connected to or disconnected from.

On both sides of the running portion of the substrate holder 12, shield plates 32, 3
2 are installed. The shield plate 32 is a rectangular plate as shown in FIG. 5, and has openings 33 formed at the center of the four side edges, respectively, so that the eight substrates 1 and 1 held by the substrate holder 12 are formed. Exposing four substrates 1 every other substrate,
The remaining substrate 1 can be covered.

The cathodes 13, 13 installed on the side walls of the sputtering chamber 11 are connected to the openings 33 of the shield plate 32.
It is installed in accordance with the position of. Each cathode 13
Is composed of a target 34 facing the substrate 1, a target holder 35, a cooling mechanism for the target holder 35, and a cathode body 36 containing a rotating magnet and the like for applying a magnetic field to the sputtering space. A DC power or a high-frequency power can be introduced into the target 34 from a power source (not shown).

The four cathodes 13 provided on each side wall of the sputtering chamber 11 are such that, in the magnetic film sputtering chamber C, the targets 34 of the upper and lower two cathodes 13 are Cr targets, and the two cathodes 13 of the left and right are 13
The target 34 is a CoCrTa alloy target,
In the base sputtering chamber B, the targets 34 of all the cathodes 13 were Cr targets.

The heating chamber A has a side wall provided with a heating mechanism 39 in place of the cathode 13.
The heating mechanism 39 uses an infrared radiation lamp or the like as a heat source, and is installed at a position (eight positions in the case of the illustrated embodiment) facing the substrate 1 supported by the substrate holder 12.

The magnetic recording medium having the structure shown in FIG. 1 was manufactured by using the magnetic recording medium manufacturing apparatus having the above-described structure.

Each substrate holding portion of the substrate holder 12
The substrate 1 of 5 inches was held and intermittently transferred to the heating chamber A, the base sputtering chamber B, and the magnetic film sputtering chamber C via the transfer mechanism 37.

In the heating chamber A, the substrate 1 is kept at about 200 ° C. while the inside of the chamber is evacuated by the vacuum pump 14.
To degas the substrate 1. Since the gas such as H ₂ O is released in the degassing process, the gate valves 38 were closed so as not to flow into the sputtering chambers B and C.

After the degassing process is completed, the substrate holder 1
2 was transferred into a base sputtering chamber B, and a Cr film (1000 Å) was formed as a base layer 3 on the surface of the substrate 1 by sputtering. The time required for sputtering was about 8 seconds at 1 kW. In the base sputtering chamber B, four cathodes 13
Whereas the substrate holder 12 has
Are arranged on the same circumference at equal intervals.
Therefore, sputtering was performed twice by rotating the substrate holder 12 by 45 degrees.

The pressure in the sputtering chamber 11 was evacuated to a level of 10 ⁻⁸ Torr as a background, and then Ar gas was introduced to 3 × 10 ⁻³ Torr.

After the formation of the underlayer 3, the substrate holder 12
Was transferred to a magnetic film sputtering chamber C, and a CoCrTa layer 4 and a Cr layer 5 were alternately formed on the surface of the underlayer 3.

The CoCrTa layer 4 is formed by depositing the substrate 1 on a Co
Needless to say, the sputtering is performed with the substrate 1 facing the Cr target, and the substrate 1 is formed so as to face the CoCrTa target and the Cr target alternately. The rotation mechanism 23 was controlled, and the step rotation mechanism was stopped during sputtering, so that the facing relationship between the substrate 1 and the target 34 was maintained. During sputtering, a bias potential was applied to the substrate holder 12 via a bias application power supply 25. The pressure of the sputtering chamber 11 was set to 3 × 10 ⁻³ Torr by introducing an Ar gas into the sputtering chamber 11 evacuated to the order of 10 ⁻⁸ Torr as described above.

Each substrate 1 is made of a CoCrTa target and Cr
Various modes can be considered for the step rotation sequence of the substrate holder 12 for alternately facing the target. For example, in FIG. 5, the substrate 1 indicated by B faces the CoCrTa target at the illustrated position, Next, a Cr target, a CoCrTa target, a Cr target, a CoC
Three CoCrTa layers 4 can be formed so as to sequentially face the rTa target and sandwich the two Cr layers 5 therebetween.

The thicknesses of the CoCrTa layer 4 and the Cr layer 5 are controlled by electric power introduced through the cathode 13 so that a predetermined thickness can be obtained in the same sputtering time. In the case of the embodiment, the distance between the substrate 1 and the target 34 is 40 mm, the diameter of the target 34 is 152 mm, and C
When the oCrTa layer 4 has a thickness of 180 Å and the Cr layer 5 has a thickness of 100 Å, power of 0.05 to 0.3 kW is applied to the CoCrTa target, and 0.1 to 0.3 kW is applied to the Cr target.
The sputtering time for one layer 4 or Cr layer 5 is 1 to 1
It could be 0 seconds. Therefore, three tanks of CoCrTa
It takes about 1 minute to sputter a total of five layers, the layer 4 and the two Cr layers 5. When only the CoCrTa layer 4 has a thickness of 540 angstroms, it takes about 8 seconds at an electric power of about 0.7 kW.

CoC deposited on 3.5 inch substrate 1
When the film thickness distribution characteristics of the rTa film and the Cr film were examined, the results were as shown in FIG. In the figure, (a) shows the distribution of the CoCrTa film,
(B) is the distribution of the Cr film. In each case, radius 22, 3
The film thickness was measured and measured at 45 ° intervals along a circumference of 2, 42 mm. The distribution of both the CoCrTa film and the Cr film was within ± 5% of the average film thickness.

FIG. 1 is an enlarged cross-sectional view of a part of a magnetic recording medium having a CoCrTa film as a magnetic film manufactured by an apparatus for manufacturing a magnetic recording medium according to the present invention. As shown in FIG. 1, a Cr underlayer 3 (1000 Å) is formed on an aluminum substrate 1 having a NiP plating layer 2 formed on its surface by sputtering, and a C
oCrTa film 4 is replaced with Cr film 5 (100 Å)
To form a plurality of layers. CoCrTa film 4 and C
The r film 5 was formed by the above-mentioned stationary facing sputtering apparatus, and the background vacuum of the apparatus was 10 ⁻⁸ T.
orr level, and the substrate 1
Degas by heating to ~ 280 ° C. During sputtering, argon gas was introduced to 3 × 10 ⁻³ Torr, and a −300 V bias was applied to the substrate holder holding the substrate 1. As a target for forming the CoCrTa film 4, a Co alloy containing 12 atm% of Cr and 2 atm% of Ta was used.

In order to improve the coercive force Hc and to examine the change in Br · δ, as shown in FIG. 7, a single CoCrTa layer 4 and a single CoCrTa layer 4
Four layers were prepared. In each case, CoCrT
The thickness of the a-layer 4 was set to 270 angstroms in the case of two layers, 180 angstroms in the case of three layers, and 135 angstroms in the case of four layers so that the total thickness was 540 angstroms.

The coercive force Hc and Br · δ of each magnetic recording medium were as shown in FIG. That is, by making the CoCrTa layer 4 a plurality of layers, the coercive force Hc is set to 2000 Oe or more,
The maximum could be 2257 Oe. Only by applying a bias to the substrate side, the coercive force Hc is improved by 1770 O
e (in the case of one layer), and it was found that dividing the CoCrTa layer into a plurality of layers was effective.

Br · δ is about 400 G · μ in each case.
m is substantially constant, and it has been found that by ensuring the total film thickness of the CoCrTa layer 4, Br · δ can be kept constant.

The relationship between the number of CoCrTa layers 4 and the coercive force Hc was maximum when three layers were used, and was lower when two and four layers were used.

Considering that the coercive force Hc is 2000 Oe or more, the allowable range of film formation that can be formed on the underlayer 3, the controllable film thickness of the CoCrTa layer 4, and the like, the number of CoCrTa layers 4 is Two to four layers were found to be suitable.

Although the embodiment of the magnetic recording medium manufacturing apparatus according to the present invention has been described above, the present invention is not limited to the embodiment. For example, CoCrTa target and Cr targets of the magnetic film sputtering chamber C is one by at least one, and placed in the sputtering chamber 11 and configured Ru Thea, also the number of substrates held by the substrate holder 12, at least one The retained configuration
You can also.

The number of the magnetic film sputtering chambers C is not limited to one, and two or more magnetic film sputtering chambers C are connected in series to form the CoCrTa layer 4 and the Cr film.
A multilayer film of the layer 5 may be formed.

In the embodiment, the magnetic film is CoCrTa and the target 34 is a CoCrTa alloy target. However, CoCrTaNi, CoCrTaPt, CoC
rTaW, CoCrNi, CoCrNiPt, or Co
The magnetic film of CrNiW can be similarly implemented by changing the target 34. The Cr target for the Cr layer 5 is also a Cr-Mo film, a Cr-V film, a Cr-Mn film, or another Cr target.
As the alloy target, the Cr layer 5 may be a Cr alloy layer.

[0044]

According to the magnetic recording medium manufacturing apparatus of the present invention, a magnetic recording medium having a high coercive force Hc and Br · δ can be provided.

Also, since CoCrTa sputtering is performed with the substrate and the target stationary and opposed, CoCrT
a can be made uniform in the thickness direction.

Further, the sputtering of the CoCrTa layer and the sputtering of the Cr or Cr alloy layer can be performed at short time intervals, and each layer can be exposed to an atmosphere containing a harmful gas.
Can prevent deterioration.

[Brief description of the drawings]

FIG. 1 is an enlarged sectional view of a part of a magnetic recording medium according to an embodiment of the present invention.

FIG. 2 shows CoCrT of a magnetic recording medium according to an embodiment of the present invention.
4 is a graph showing the relationship between the number of a layers and the coercive force Hc.

FIG. 3 is a configuration diagram of an embodiment of a manufacturing apparatus of the present invention.

FIG. 4 is a schematic sectional view of a sputtering chamber of the same embodiment.

FIG. 5 is a view seen from line AA in FIG. 4;

FIG. 6 is a graph of a film thickness distribution characteristic of the apparatus of the embodiment,
(A) is a graph of the distribution of the CoCrTa film, and (b) is a graph of the distribution of the Cr film.

FIG. 7 is an enlarged sectional view of a part of a conventional magnetic recording medium.

FIG. 8 shows the coercive force Hc and CoCr in a magnetic recording medium.
4 is a graph showing the relationship between the thicknesses of Ta films.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Substrate 2 NiP plating layer 3 Underlayer 4 CoCrTa layer 5 Cr layer 11 Sputtering chamber 12 Substrate holder 13 Cathode 14 Vacuum pump 23 Step rotation mechanism 25 Bias power supply 32 Shield plate 34 Target 37 Transport mechanism 38 Gate valve 39 Heating mechanism

Continuation of front page (56) References JP-A-4-21921 (JP, A) JP-A-3-127329 (JP, A) JP-A-2-154323 (JP, A) JP-A-4-356728 (JP) JP-A-5-28484 (JP, A) JP-A-5-101367 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) G11B 5/62-5/82 C23C 14/14 C23C 14/34

Claims (2)

(57) [Claims] A heating chamber, a base chamber, and a magnetic chamber;
When the conductive film sputtering chamber is
In the direction of the sequence of these chambers, these
Substrate supporting a substrate made of non-magnetic material inside the chamber
The holder is moved from the heating chamber to the base chamber.
ー 、 Transfer machine to sequentially transfer to the magnetic film sputtering chamber
The heating chamber and the substrate chamber
Bar adjacent area, base chamber and magnetic film sputtering chamber
Adjacent to the bar, as well as the outer wall of the heating chamber
On the outer wall of the magnetic film sputtering chamber.
Transfer of the substrate holder by the transfer mechanism
Magnetic with gate valve installed to allow passage
An apparatus for manufacturing a recording medium, comprising: a side wall facing the inside of the magnetic film sputtering chamber;
Are on the side facing the inside of the magnetic film sputtering chamber, respectively.
Depending on the target holder
In favor of gold targets,
Card that introduces DC power or high-frequency power through the
An even number of swords face the inside of the magnetic film sputtering chamber.
On the other side, a CoCrTa alloy
The target is supported and the cathode is
Other power sources that introduce DC or RF power through the body
Even number of swords, every other at equal intervals in the circumferential direction
Are provided on both sides facing the inside of the base chamber, respectively.
The target holder on the side facing the inside of the earth chamber
Support the Cr target, and
And direct or high frequency power through the cathode body
The cathode to be introduced is the magnetic film sputtering chamber.
Cr target or Cr alloy tag provided on one side wall
Target and the number of cathodes with CoCrTa alloy
At least equal to the sum of the number of cathodes with target
Of even numbers, which are provided at equal intervals in the circumferential direction.
And the substrate holder is rotatably insulated from ground potential.
A possible disc-like shape, at least
Number of cathodes on the inner wall of the
Even number of through holes are formed at equal intervals in the circumferential direction.
And three springs provided along the inner periphery of each through hole.
A piece of non-magnetic material made of a circular
The board can be held, and the board holder
It is the center of the rotational movement and has a coupling at the tip.
A support shaft, and the underlayer chamber and the magnetic film sputtering chamber
Step rotation at least in the center of one side wall
Mechanism for the step rotation mechanism.
Inside the chamber and inside the magnetic film sputtering chamber
Output shaft that extends in the direction and has an insulating material interposed in the middle
It is configured so that the substrate holder can be
And transferred to the magnetic film sputtering chamber
When they are transferred into the
Can be connected to and disconnected from the coupling at the tip of the support shaft of the
The substrate holder is transported in the base chamber.
On the inner wall of the underlying chamber
The plurality of cathodes with a Cr target
Openings are provided at opposing positions, and
The output shaft of the step rotation mechanism moves forward and backward to the center
A shield plate provided with a through hole
Substrate holder transferred to the underlying chamber.
The plurality of through-holes of the holder allow the substrate holder to be rotated.
At a position facing the plurality of openings of the shield plate.
Only the hits will be through the opening
-Cr targets on the inner wall of each
The other through hole of the substrate holder can be opposed to the seal
And a substrate holder in the magnetic film sputtering chamber.
Magnetic film sputter chamber on both sides of the transfer position
Cr target or Cr alloy
Multiple cathodes with gold targets and CoCrT
a facing multiple cathodes with alloy target
Opening at each position
When the output shaft of the step rotation mechanism moves forward and backward,
A shield plate provided with a through hole to be inserted is provided
The substrate transferred into the magnetic film sputtering chamber.
The plurality of holes of the plate holder are rotated by the substrate holder.
Turned to face the plurality of openings of the shield plate
Only the one that hit the position is
Cr tar on the inner wall of the sputtering chamber
Get or Cr alloy target and CoCrTa alloy
It can face each target, and other than the substrate holder
The through-hole is covered with the shield plate, and a circular non-magnetic material substrate is provided at the center of the plurality of through-holes.
Substrate holder is transferred to underlying chamber
The coupling at the tip of the support shaft.
Receives input from the output shaft of the
The disk-shaped substrate holder rotates and stops in the circumferential direction
Is performed on the circular non-magnetic material substrate as an underlayer.
When a film is formed, a plurality of openings in the shield plate are formed.
Caso provided on the inner side wall of the base chamber through
Circular non-magnetic material facing Cr target
The substrates made at the same time, respectively,
A circular non-magnetic material substrate in the center of the plurality of through holes.
The substrate holder holding the magnetic film sputtering chamber
-When transferred into the cup, the cup at the tip of the support shaft
Input from the output shaft of the step rotation mechanism connected to the ring
Under the force, the disk-shaped substrate holder rotates in the circumferential direction.
Start and stop, and a Cr layer or
Is when a Cr alloy layer or CoCrTa layer is formed
Then, a magnetic film slide is formed through a plurality of openings of the shield plate.
Of the cathode installed on the inner wall of the putter chamber
Multiple opposing Cr or Cr alloy targets
Circular non-magnetic material substrate and CoCrTa alloy target
The multiple circular non-magnetic substrates facing the
Respectively, the Cr target or the Cr alloy target, respectively.
, Statically opposed to the CoCrTa alloy target,
At 10 second intervals, the Cr layer or Cr alloy layer and Co
When the CrTa layer is formed, a disk-shaped substrate holder
Rotates in the circumferential direction, forming a Cr layer or Cr alloy layer
The substrate is then placed on a CoCrTa alloy target.
Opposed through a plurality of openings of the shield plate,
The substrate on which the CrTa layer was formed was then placed on a Cr target.
Or, open a plurality of shield plates on the Cr alloy target.
Cr or Cr characterized by being opposed through the mouth
An apparatus for manufacturing a magnetic recording medium in which alloy layers and CoCrTa layers are alternately stacked . 2. A base chamber and a magnetic film sputtering chamber.
Bars are placed at the center of the other side walls, respectively,
The source is provided with a side wall of the underlying chamber
And insulation between the sidewalls of the magnetic film sputtering chamber
Inside the underlying chamber of the bias applying power supply
Extending in the direction and inward of the magnetic film sputtering chamber
The force axis can move forward and backward, and the substrate holder
When transferred into the bar and when the magnetic film
When it is transferred into the
Insert the center of the bias applying power supply output shaft when
The support of the substrate holder is
The Cr or Cr alloy according to claim 1, wherein the Cr or Cr alloy is connectable to and detachable from a coupling at the other end of the shaft.
An apparatus for manufacturing a magnetic recording medium in which gold layers and CoCrTa layers are alternately stacked .