JP3280869B2 - Crystal orientation alignment method for cutting single crystal ingot with cleavage - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for aligning the crystal orientation of a single crystal ingot having a cleavage property at the time of cutting, and more particularly, to finding a plane orientation when cutting a single crystal ingot having a cleavage property into a wafer. The present invention relates to a crystal orientation aligning method that can perform crystal orientation alignment safely, easily, accurately, and in a short procedure by using crystal orientation alignment information using a cleavage plane during pre-cutting.

[0002]

2. Description of the Related Art When manufacturing a wafer by cutting a single crystal ingot, it is necessary to determine a desired crystal orientation. For this purpose, first, a single crystal ingot is preliminarily cut, and a cut surface thereof is irradiated with an X-ray irradiator. An X-ray diffraction method for determining a desired crystal orientation by analyzing interference caused by the incidence of the X-rays and the emission of the X-rays has been used (the crystal to be cut having a known lattice spacing). Assuming that the desired crystal plane spacing is d, the wavelength of the monochromatic X-ray to be used is λ, and the incident angle is θ, the phase coincidence occurs when the condition of nλ = 2d sin θ (where n is an integer) is satisfied [ Bragg's Law]
How to use the phenomenon).

[0003] For the pre-cutting of the single crystal ingot, usually,
The inner peripheral blade saw 10 as shown in FIG. 6 is used, and at the time of cutting, the single crystal ingot 1 is attached to a crystal attaching table 2 made of graphite. It is attached to a jig 11 for fixing the inner peripheral blade saw 10 on which the inner peripheral blade 4 is provided. Then, the fixing jig 11 is moved by the moving means (not shown) to the inner peripheral blade 4.
Of the single crystal ingot 1 is cut out together with the graphite bonding table 2 made of graphite by moving the single crystal ingot 1 from the center in the radial direction. Thereafter, based on the crystal orientation information obtained by the X-ray diffraction obtained from the pre-cut surface, the angle adjusting mechanism (not shown) of the inner peripheral saw 10 is adjusted to fix the inner peripheral saw 10. The angle of the jig 11 is set at a desired angle, and the wafer is cut from the main body of the single crystal ingot 1 by the inner peripheral saw 10.

[0004] In another method, a single crystal ingot 1 which has been preliminarily cut is attached to a crystal attachment table 2 on which a main body is attached.
Is removed from the jig 11 for fixing the inner peripheral blade saw 10 and attached to a jig 21 for fixing the multi-wire saw 20 as shown in FIG. Multi-wire saw 2 based on azimuth information
By adjusting an angle adjusting mechanism (not shown) of 0, the angle of the fixing jig 21 of the multi-wire saw 20 is set to a desired angle, and the main cutting of the wafer is performed. In FIG. 7, reference numeral 5 denotes a wire as a cut body, which is wound at predetermined intervals around work rollers 6, 6 having spiral grooves formed around the wire, and the wire 5 is rotated by rotation of the work rollers 6, 6. Is moved into sliding contact with the single crystal ingot 1 while cutting the single crystal ingot 1 into wafers. Reference numeral 7 denotes a polishing liquid supply pipe for supplying a polishing liquid to the cut surface.

There is also known a method and an apparatus for determining the crystal orientation not by X-rays but by optical means. For example, an incident light beam is projected through a pinhole of a screen onto a crystal sample placed on a sample stage. Then, the direction of the crystal sample with respect to the incident light beam is adjusted by adjusting the sample stage, and one or more light images are sequentially made coincident with the pinhole portion of the screen, and the angle in each case is recorded and calculated. A device in which the crystal orientation of a crystal sample is measured is known (for example, see Japanese Utility Model Publication No. 63-15812).

[0006]

The conventional method using X-rays requires careful handling, the equipment is large and expensive, the maintenance is not easy, and the safety of operations such as radiation exposure check. It is required to pay attention to ensuring the quality. X-rays are suitable for obtaining information on a minute portion irradiated with a beam because the beam is extremely narrowed down, but on the other hand, since it is information on a limited portion, the surface to be measured is small. We had to pay attention to the formation of

Further, at the time of pre-cutting and main cutting, the crystal bonding table 2 made of graphite to which the single crystal ingot has been bonded is directly attached to the mounting jigs (11, 21) on the cutting device side. It was difficult to maintain the accuracy, and after all, work for adjusting the crystal orientation was required at each time point, and the work was complicated.

SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a method capable of easily and safely aligning a crystal orientation required for manufacturing a wafer by cutting a single crystal ingot. Another object of the present invention is to
Even when performing a preliminary cutting and a main cutting by a single cutting device (for example, an inner peripheral saw), a preliminary cutting is performed by an inner peripheral saw and a main cutting is performed by another cutting device (for example, a multi-wire saw). Even in the case of performing in, the crystal orientation information obtained at the time of preliminary cutting for plane orientation calculation can be used as it is for positioning of the single crystal ingot at the time of main cutting, thereby adjusting the cut surface once Accordingly, it is an object of the present invention to provide a method of aligning the crystal orientation at the time of cutting a single-crystal ingot, which makes it possible to finish all the cutting of a wafer.

[0009]

Means for Solving the Problems Semiconductor crystals are roughly classified into single element semiconductors and compound semiconductors. Single element semiconductors (such as Si and Ge) do not have cleavage properties, but GaP or Ga.
III-V compound semiconductors such as As and II- such as ZnS
The group VI compound semiconductor has a cleavage property, and the cleavage face is an extremely flat face formed by atomic faces, unlike a face obtained by polishing.

On the other hand, laser light (visible laser light) has excellent straightness and is safe, and the laser light transmitting / receiving device is smaller and safer than an X-ray diffraction device. Further, since the laser beam can irradiate a wide area of about 1 to 2 mmφ, information from a wide range can be obtained at a time without paying special attention to the formation of the surface to be measured.

According to the present invention, the intended purpose is achieved by effectively utilizing the characteristics of the "cleavage plane" and the characteristics of the "laser light (visible laser light)" of the single crystal ingot having the cleavage property. Therefore, for the method and apparatus for determining the crystal orientation, basically use the method and apparatus for determining the crystal orientation by the optical means as described above, and, as the laser light irradiation surface U.S. Pat. No. 6,074,897 uses a cleavage plane in a slice obtained in a process of precutting a portion of a single crystal ingot having an insufficient size for the purpose of determining a plane orientation.

That is, the present invention basically relates to a method of aligning the crystal orientation at the time of cutting a single crystal ingot having a cleavage property. Preliminary cutting for the purpose, irradiating the cleavage plane of the section with visible laser light, measuring the incidence and emission angles to obtain information on the crystal orientation, based on the information during preliminary cutting for determining the plane orientation It is characterized in that the crystal orientation is aligned at the time of main cutting of the single crystal ingot.

In the present invention, the preliminary cutting for the plane orientation and the main cutting may be performed by the same cutting device (for example, an inner peripheral saw). The main cutting may be performed by another cutting device (for example, a multi-wire saw). Furthermore, in the present invention, since information on the angle difference between the cut plane to give the specific crystal orientation and the preliminary cut plane (that is, information on the crystal orientation plane) is obtained only from the pre-cut section, It is possible to obtain necessary information in the process of pre-cutting, and it is possible to share a jig for fixing a single crystal ingot to the inner peripheral saw and a jig for fixing to the multi-wire saw. It becomes possible, by moving the single crystal ingot after pre-cutting for plane orientation with the inner peripheral saw together with the fixing jig to which the single crystal ingot has been attached to the multi-wire saw, It is also possible to omit the angle adjustment.

As described above, since X-rays are not used in the present invention, preliminary cutting for plane orientation and wafer cutting can be performed safely and easily. Costs can be reduced.

[0015]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, a method for aligning a crystal orientation at the time of cutting a single crystal ingot having a cleavage according to the present invention will be described.
GaP (gallium phosphorus) which is a III-V compound semiconductor
Will be described in detail by taking an example.

As shown in FIG. 1, an ingot of GaP or the like is usually a small seed crystal of about 5 to 10 mm × 5 cm by a pulling method (LEC method) by liquid sealing of B ₂ O ₃ (boron oxide) or the like. A crystal 1 grown from 1 ', which generally has a shell-shaped outer shape as shown in FIG. 1, and has an undersized portion 1s smaller than the size required for the wafer at the crystal end. The portion is cut off, but at the time of cutting, the slice is sequentially sliced at a predetermined width thinner than the crystal end in order to prevent the crystal from cracking due to distortion inherent in the crystal due to the coefficient of thermal expansion after crystal growth. Is done.

According to the present invention, the sections (1a ₁ , 1a ₂ , 1) of the part to be cut off (ie, the undersized part 1s) are provided.
a ₃ ..) is effectively used, and a cleavage plane, which appears when the cut piece is cut and intersects at an angle perpendicular to or close to the cut plane (preliminary cut plane), is used as the laser beam irradiation plane.

For example, when a cleavage plane orthogonal to a cutting plane is used, and when cleavage planes to be used (at least two planes are required) are orthogonal (for example, {100})
The {110} cleavage plane at the time of cutting at the plane is shown in FIG.
(A) X plane (7) or (8) and Y plane (9) or (1)
2) is used for laser beam reflection, and when the cleavage planes used are not orthogonal (for example, a {110} cleavage plane at the time of cutting along a {111} plane), FIG. X
Plane (11) or (12) and Y 'plane (13) or (14)
Alternatively, the two surfaces (15) and (16) are used for laser beam reflection.

The X plane (7) or (8) in FIG.
Is the intersection of the {110} cleavage plane with the XY plane
Is orthogonal to the X axis, and the Y plane (9) or (10)
Is the intersection of the {110} cleavage plane with the XY plane
There are those perpendicular to the Y axis.

The X plane (11) or (12) in FIG.
Is the intersection of the {110} cleavage plane with the XY plane
There are those perpendicular to the X axis, Y 'plane (13) or (1
4) or (15) or (16), in the {110} cleavage plane, the line of intersection with the XY plane is orthogonal to the Y ′ axis. However, where, Y 'axis, there to Y-axis orthogonal to the X axis at a position ± 30 ° rotation in the X-Y plane, X-Y
The line of intersection with the plane is perpendicular to the line of intersection of the {110} cleavage plane other than the {110} cleavage plane perpendicular to the X axis and the XY plane .

Next, a description will be given of a measuring system for irradiating the above-mentioned cleavage plane with visible laser light to measure the incident angle and the outgoing angle. FIG. 3A shows an example of the measurement system. In the figure, reference numeral 31 denotes a wafer table, which is a material that reflects laser light without scattering (for example, has good workability and is used for a prism or the like). Glass or synthetic quartz coated with a metal such as Au). Then, the wafer mounting surface 31H and the laser light reflecting surface 31V, which are the upper surfaces, are provided.
Are processed so as to be orthogonal to each other. Further, the wafer table 31 is mounted on a wafer angle and height adjustment table 32. Reference numeral 41 denotes a laser light oscillator, which is arranged so that the visible laser light 18 irradiates the laser light reflecting surface 31V of the wafer table 31.

A ruler 50 as shown in FIG. 3B is arranged between the laser light oscillator 41 and the wafer stage 31 and immediately before the laser light oscillator 41. In the ruler 50, reference numeral 51 denotes a passage hole for the transmitted laser light 18, and reference numeral 52 denotes a scale. Reference numeral 18a denotes an optical path incident on the wafer table 31 side, and reference numeral 18b denotes an optical path emitted from the wafer table 31 side.

At the time of measurement, first, the laser light oscillator 41
And the position of the incident light path 18a transmitted from the ruler 50 and passing through the opening 51 of the ruler 50, and the laser light reflecting surface 3 of the wafer table 31.
Distances h and w in the two axial directions with respect to the position of the outgoing optical path 18b which is reflected at 1V and reaches the ruler 50 (FIG. 3B).
However, the wafer angle and height adjustment table 32 is adjusted so that h = 0 and w ≒ 0. At this time, it is desirable that w is sufficiently smaller than the distance L (FIG. 3A) between the laser beam reflecting surface 31V of the wafer table 31 and the ruler 50 (that is, 100w <L). Is preferably a beam in the vicinity of 1 mmφ so that its center position can be easily recognized by the naked eye.

After adjusting the wafer angle and the position of the height adjusting table 32 by a control mechanism (not shown), the preliminarily cut section 1a is cut so that the cleavage plane thereof is substantially flush with the laser light reflecting surface 31V. The wafer is placed on the wafer mounting surface 31H of the wafer table 31. Then, the wafer angle and height adjustment table 3
2, the height of the section 1a is lowered so that the laser beam 18a hits the cleavage plane of the section 1a, and the distance h when the emitted light 18b reaches the ruler 50 is read.

Assuming that the incident angle and the emission angle of the laser beam 18 are φ, tan2φ = h / L, and φ = tan
^-1 (h / L) / 2. Now, for example, a desired cutting crystal face (111) plane, the cleavage plane (1 -1 0) face and (10 -1) When a surface and (01 -1) plane, desired cutting crystal face and when the angle between the cleavage plane and theta, theta is the inner product of the normal vector of each surface (equation 1), a ^{cosθ = 0 / (3 1/2 ×} 2 1/2) = 0,, θ = 90 °. (Equation 1) (a, b) = | a | ×
| B | × cos θ (where θ is the angle between vector a and vector b)

Therefore, (desired cut crystal plane) ⊥ (cleavage plane), and since the preliminary cut plane is parallel to the laser optical axis, the angle between the preliminary cut plane and the desired cut crystal planeψ
When the laser beam is irradiated from the X-axis and Y-axis in FIG. 2 (a) and the X-axis direction in FIG. 2 (b), 関係 = φcos0 °. b) When laser light is irradiated from the Y ′ axis direction , ψ = φcos 30 °.

[0027] That is, in the case of, (1 -1 0) face, (10 -1)
Plane and the (01 -1 ) plane intersect at 120 °, so Y ′
Axis forms an angle of 30 ° with the Y axis, and is therefore parallel to the Y ′ axis
Rights to in and the X-Y plane of the angle φ on the vertical plane, the Y axis
In order to obtain the conversion amount for a plane that is a row and is perpendicular to the XY plane, it is necessary to obtain the product of cos30 °.

According to the present invention, as described above, the insufficient size portion of the single crystal ingot is preliminarily cut from the crystal end in order to obtain the plane orientation, and the slices are sequentially processed as described above. , The information necessary for matching the preliminary cutting plane to the desired cutting plane (that is, the amount of angle correction in a plane including the X-axis or the Y-axis and perpendicular to the XY plane) is clarified. In order to obtain a specific crystal orientation by using the angle adjustment mechanism of the inner peripheral saw without removing the single crystal ingot that has been preliminarily cut from the cutting device, for example, the mounting jig of the inner peripheral saw. By adjusting the angle difference between the desired cut plane to be cut and the actual preliminary cut plane, the main cutting by the inner peripheral saw can surely cut a wafer having a desired crystal orientation. At that time, the preliminary cutting for the above-mentioned plane orientation is performed several times over several centimeters from the crystal tip, and by adjusting the angle for each preliminary cutting section, the surface precision can be improved without difficulty Becomes

Next, an inner peripheral saw is used for preliminary cutting for obtaining a plane orientation, and a multi-wire saw is used for main cutting.
A case in which a single crystal ingot having a cleavage property is cut will be described. At the time of preliminary cutting with the inner peripheral saw as described above, information necessary for matching the preliminary cut surface with a desired crystal plane (that is, including the X axis or the Y axis and perpendicular to the XY plane) The amount of angle correction within a plane is clarified. In this embodiment, when fixing the single crystal ingot to the inner peripheral saw so that this information can be used as it is in the multi-wire saw as the main cutting apparatus, FIG.
A pair of jigs made of a material that can provide high processing accuracy such as SUS as shown in FIG.

In FIG. 4, reference numeral 60 designates a mounting jig fixed to the cutting device side (for example, the inner peripheral blade saw 10 side).
, A Y surface 62, and a horizontal portion 63 serving as a fixing surface of the inner peripheral saw 10 to a machine frame (not shown). The material is SUS, and the X-plane 61 and the Y-plane 62 have a crystal orientation accuracy which is sufficiently higher than the crystal orientation accuracy normally required for a wafer, for example, ± 0.5 °.
In order to maintain the accuracy of about 0.05 °,
Plane processing is performed with sufficient accuracy.

Numeral 70 denotes a crystal fixing jig for ingot mounting, which is removably mounted on the mounting jig 60, and includes an X surface 71 and a Y surface 72 which are in contact with the X surface 61 and the Y surface 62 of the mounting jig 60. The X plane 71 and the Y plane 72
Is subjected to flat processing with the same precision as the X surface 61 and the Y surface 62 of the mounting jig 60. The surface opposite to the X-plane 71 in this example is a mounting surface 73 of the ingot 1, and the surface 73 is appropriately fitted with a crystal bonding table 2 made of graphite to which the single crystal ingot 1 is bonded. Fixed by means.

FIG. 5 shows a state in which the mounting jig 60 and the crystal fixing jig 70 are preliminarily cut by a conventional inner peripheral saw. First, as in the conventional case, a graphite crystal sticking table 2 on which a single crystal ingot 1 is stuck,
A crystal fixing jig 70 is fixed to the surface 73 with its lower end positioned below the lower end of the crystal fixing jig 70, and is fixed to the inner periphery by a fixing screw (not shown). It is mounted on a mounting jig 60 fixed to the blade saw 10 side. In that state, preliminary cutting is performed on the portion 1 s of insufficient size of the single crystal ingot 1, as shown in FIG.
By the inner peripheral blade 4, the crystal bonding table 2 'made of graphite
And the ingot 1 is preliminarily cut and the precut slice 1a
Get. Information on the angle difference between the desired cut surface and the preliminary cut surface is obtained using the measurement system described above for the preliminary cut section 1a. This preliminary cutting is sequentially performed for a plurality of stages, and at this time, the position of the point 1x where the preliminary cutting is completed is set so as to overhang by several mm from the lower end of the crystal fixing jig 70 for safety. By doing so, the ingot portion that is not cut off by the preliminary cutting is S
It is firmly supported by the crystal fixing jig 70 made of US, and required accuracy is secured.

After the information necessary for matching the cut plane to the desired crystal plane is obtained from the laser light reflection measurement on the cleavage plane, the crystal fixing jig 70 is fixed to the inner peripheral saw 10. The ingot 1 is removed from a certain mounting jig 60 and the ingot 1 is transferred to the multi-wire saw 20 together with the crystal fixing jig 70. Although not shown, the same mounting jig as the mounting jig 60 is fixed to the machine frame side also on the multi-wire saw side, and the crystal fixing jig 70 is mounted on the mounting jig. In this way, by sharing the jig 70 to which the crystal ingot 1 is attached at the time of preliminary cutting with the inner peripheral blade saw 10 and at the time of main cutting with the multi-wire saw 20, the crystal ingot can be treated in a single process. Tool 7
With the crystal orientation accuracy not disturbed,
It is possible to move.

The above description is a description of several preferred embodiments of the method for aligning the crystal orientation at the time of cutting a single crystal ingot having a cleavage according to the present invention, and there are many other modifications. For example, in the above description, measurement is performed on two surfaces in total, one in the X plane and one in the Y plane, respectively. However, this is merely an example, and in order to increase the crystal plane accuracy using the laser light. For example, when measuring the X plane in FIG. 2A, the measurement is performed in both (7) and (8), and the deviation of h from 0 is corrected to further improve the accuracy. You may do so. Also, a method of irradiating the cleavage plane with laser light and measuring the incident / emission angle is also known.
The method is not limited to a measuring method using a ruler as shown in the figure, but may be a method using a suitable optical sensor and calculating necessary information using a suitable computer.

[0035]

As described above, according to the present invention,
In the case of cutting a single crystal ingot having a cleavage and easily and safely determining the crystal orientation required when manufacturing a wafer, and performing a preliminary cutting and a main cutting with a single cutting device Even if it is performed by a separate cutting device, the crystal orientation information obtained during the preliminary cutting for determining the plane orientation can be easily used as it is for positioning the single crystal ingot during the main cutting. There are advantages that can be.

[Brief description of the drawings]

FIG. 1 is a diagram illustrating a single crystal ingot having a cleavage property in a state where a crystal is grown.

FIG. 2 is a diagram illustrating a positional relationship between a cut plane and a cleavage plane of a single crystal ingot having a cleavage property.

FIG. 3 is a diagram illustrating a measurement system (FIG. A) and a ruler (FIG. B) used according to the present invention, and FIG. 3b shows a state viewed from the AA direction in FIG.

FIG. 4 is a perspective view showing a jig for attaching a single crystal ingot to the cutting device.

FIG. 5 is a diagram illustrating a state in which a single crystal ingot is attached to the cutting device using the jig of FIG. 4;

FIG. 6 is a view for explaining a conventional apparatus for preliminarily cutting a single crystal ingot using an inner peripheral blade saw.

FIG. 7 is a diagram illustrating a state in which a single crystal ingot is fully cut using a multi-wire saw.

[Brief description of reference numerals]

DESCRIPTION OF SYMBOLS 1 ... Single-crystal ingot with a cleavability, 1a ... Slice of the pre-cut single-crystal with a cleavability, 2 ... Graphic crystal sticking stand 2, 3 ... Dammond diamond particle coating part, 4 ... ... Mounting jig, 10 ... Inner peripheral blade saw, 5 ... Wire, 6 ... Work roller, 7 ... Abrasive liquid supply pipe, 21 ... Mounting jig, 20 ... Multi wire saw, 31 ... Wafer stand, 31H ... Wafer setting surface , 31V ... laser light reflecting surface,
32: Wafer angle and height adjustment table, 41: Laser light oscillator, 18: Laser light, 50: Ruler, 51: Laser light passage hole, 52: Scale, 60: Mounting jig fixed to the cutting device, 70 ... Crystal fixing jig

──────────────────────────────────────────────────続 き Continued on front page (58) Field surveyed (Int.Cl. ⁷ , DB name) B28D 5/04 H01L 21/304

Claims (6)

(57) [Claims] 1. A method for aligning a crystal orientation at the time of cutting a single crystal ingot having a cleavage property , using an inner peripheral blade saw.
The single crystal ingot is preliminarily cut from the crystal end in order to obtain a plane orientation, and the cleavage plane of the slice is irradiated with a visible laser beam to measure the incidence / emission angle to determine the crystal orientation. Information is obtained, and the crystal orientation is adjusted at the time of main cutting of the single crystal ingot by a multi-wire saw based on the information during the preliminary cutting for obtaining the plane orientation. A method for aligning the crystal orientation when cutting a single crystal ingot. 2. A jig for fixing a single crystal ingot to the inner peripheral saw and a jig for fixing to the multi-wire saw, and preliminary cutting for setting a plane orientation with the inner peripheral saw. crystal orientation of the single crystal ingot cut with cleavage of claim 1, wherein the transferring to the multi-wire saw with fixing jig a single crystal ingot paste the single crystal ingot after Matching method. 3. A method for aligning a crystal orientation at the time of cutting a single crystal ingot having a cleavage property, wherein the single crystal ingot is mounted on a cutting mechanism having an angle adjusting mechanism, and the size of the mounted single crystal ingot is insufficient. A step of obtaining a slice by preliminarily cutting the portion in order to obtain a plane orientation from the crystal end, a step of revealing a cleavage plane in the slice, and applying visible laser light to each of two intersecting cleavage planes. Irradiation to determine its incident / reflection angle φ, and from the incident / reflection angle φ, an angle in a plane including the X axis or the Y axis of the current cut plane and the desired cut crystal plane and perpendicular to the XY plane Calculating a correction amount, based on the calculated angle correction information, adjusting the angle adjusting mechanism of the cutting mechanism to perform a crystal orientation adjustment at the time of cutting the single crystal ingot. Single crystal with cleavage Crystal orientation adjustment method during cutting of ingots. 4. The cleavage according to claim 3, wherein the desired cut crystal plane is a {100} plane, and the cleavage plane for irradiating the laser beam is two orthogonal planes of a {110} plane. Orientation alignment method at the time of cutting single crystal ingots having the property. 5. The two intersecting planes, wherein the desired cut crystal plane is a {111} plane, and a cleavage plane irradiated with laser light is a {110} plane, and a coordinate axis corresponding to the crossing angle of the two planes. 4. A cutting process of a single crystal ingot having a cleavage according to claim 3, wherein the conversion is performed to calculate an angle correction amount in a plane including the X axis or the Y axis and perpendicular to the XY plane. Crystal orientation alignment method. 6. A cutting mechanism having an angle adjusting mechanism for performing preliminary cutting for obtaining a plane orientation in the method according to claim 3 is an inner peripheral saw, and a main cutting operation is performed on the inner peripheral saw. The single crystal ingot adjusted to the crystal orientation at the time is transferred to the multi-wire saw together with the single crystal ingot fixing jig so that the crystal orientation is adjusted at the time of the main cutting process. A method for aligning the crystal orientation when cutting a single crystal ingot.