KR101256596B1 - Sample holder including Single Crystal Off―Axis, Method of Manufacturing the Sample Holder, X―ray Diffraction Analyzing System using the Sample Holder and Method of Analyzing X―ray Diffraction - Google Patents

Abstract

The present invention relates to an antireflective sample holder for X-ray diffraction using a silicon single crystal, a method for manufacturing the sample holder, an X-ray diffraction analysis system including the sample holder, and a diffraction analysis method. More specifically, the sample holder manufacturing method comprising the steps of: installing a single crystal silicon ingot in the cutting means such that the crystal growth axis and the vertical axis of the single crystal silicon ingot become a specific angle; Cutting a single crystal silicon ingot to a predetermined thickness by cutting means to produce a plurality of stockpiled wafers having a stockpile having a specific angle with the cut surface; Cutting a stock wafer by cutting means to produce a plurality of stock plates provided in a rectangular shape; And forming a cavity so that the sample can be mounted on the stock plate. A method of manufacturing an anti-reflective sample holder for X-ray diffraction using the silicon single crystal stock, and an anti-reflective light for X-ray diffraction using the silicon single crystal stockpile. An X-ray diffraction analysis method using a sample holder, comprising: radiating X-rays from an X-ray generator; The X-rays emitted from the X-ray generator are diffused by the diffusion slit; Radiating the diffused X-rays to the sample holder at a predetermined angle; X-rays irradiated to the sample holder is reflected by a sample mounted on the sample holder and diffracted at a predetermined diffraction angle; Detecting an X-ray having a diffraction angle through an X-ray detector; And analyzing the sample by measuring the detected X-ray by the analyzing means. X-ray diffraction analysis method using an anti-reflective sample holder for X-ray diffraction using the stockpile of a silicon single crystal is included.

Description

Anti-reflective sample holder for X-ray diffraction using a silicon single crystal stock, a method of manufacturing the sample holder, an X-ray diffraction analysis system and a diffraction analysis method including the sample holder {Sample holder including Single Crystal Off--Axis, Method of Manufacturing the Sample Holder, X―ray Diffraction Analyzing System using the Sample Holder and Method of Analyzing X―ray Diffraction}

The present invention relates to an anti-reflective sample holder for X-ray diffraction using a silicon single crystal, a method for manufacturing the sample holder, an X-ray diffraction analysis system including the sample holder, and a diffraction analysis method. In more detail, a single crystal silicon ingot is cut to have a cutting surface having an angle of about 5 ° with a specific crystal direction (non-axis surface), and a sample holder, a method of manufacturing a sample holder manufactured using the non-axis wafer, An X-ray diffraction analysis system including a sample holder and an X-ray diffraction analysis method. The non-reflective sample holder for X-ray diffraction does not generate diffraction irrespective of the irradiation angle even if X-rays are irradiated on the stock plate except for the sample, thereby providing a diffraction analysis system or pattern with reduced noise.

In general, an X-ray diffractometer analyzes a fine crystal structure of an object through a goniometer measuring a diffraction angle and a coefficient recording device measuring an X-ray diffraction intensity. Recently, in order to measure X-rays diffracted by the development of diffraction analysis equipment, one-dimensional detectors such as scintillation counter counters and proportional counter counters, solid-state imaging devices, and imaging instead of films are used. Two-dimensional detectors, such as imaging plates, are mainly used.

The X-ray diffraction analyzer using such a detector can significantly reduce the measurement error compared to an analyzer using a film, and thus the measurement accuracy is improved by about 100 times or more. Therefore, when the analysis is performed through the X-ray diffraction analyzer using the detector, it is possible to shorten the crystal structure analysis time of the sample and to easily measure the crystal structure and orientation of the directional material.

1A is a perspective view schematically showing a conventional X-ray diffraction analyzer 1. FIG. 1B also shows a schematic top view of a conventional X-ray diffraction analyzer 1. As shown in FIGS. 1A and 1B, the conventional X-ray diffraction analyzer 1 includes a first stage 20 in which an X-ray generator 10 and a sample holder 4 on which a sample 3 to be analyzed are mounted are installed. ) And an X-ray detector 30 installed on the second stage 21 and the second stage 21 rotatably provided to detect incident diffraction X-rays.

The first stage 20 is rotatably provided, and the tilt direction of the sample holder 4 with respect to the X-ray generator 10 can be adjusted by adjusting the rotation direction thereof. The second stage 21 is rotationally driven independently of the first stage 20. By rotating this second stage 21, the direction of the X-ray detector 30 can be adjusted. X-ray detector 30 may be composed of a film, one-dimensional and two-dimensional detector.

The X-rays 2 generated by the X-ray generator 10 are irradiated to the sample holder 3. The irradiated X-ray 2 is diffracted at a predetermined diffraction angle 2θ according to the crystal structure of the sample 3. Here, the diffraction angle 2θ is a unique value according to the crystal structure of the sample 3.

The location of the X-ray peak, i.e. the specific diffraction angle 2θ, is inherent in the crystal structure of the sample 3 and is used to determine the distance between the gratings according to Bragg's law. It is possible to know the crystal structure through this.

However, the X-ray 2 to be irradiated is diffracted not only by the sample 3 but also by the sample holder 4 on which the sample 3 is mounted, or the sample 3 filled in the cavity of the sample holder 4 has X-ray transmittance. When is large, since the sample 3 filled in the sample holder 4 is diffracted into the sample holder 4, noise is generated in the X-ray detector 30. Therefore, even if X-rays are irradiated to the plate surface constituting the sample holder 4, the X-ray diffraction should be irradiated over a critical angle at which no X-ray diffraction occurs. 2A shows a graph of the intensity of diffracted X-rays when X-rays 2 are scanned at a predetermined angle on the upper surface of the plate 5 made of single crystal silicon. The plate 5 made of single crystal silicon shown in FIG. 2A corresponds to a conventional plate 5 without a stockpile. FIG. 2B shows a graph of the intensity of the diffracted X-rays when the X-rays 2 are scanned at a predetermined angle on the upper surface of the plate 6 made of polycrystalline silicon.

As shown in FIGS. 2A and 2B, as the irradiation angle increases, the intensity of the diffracted X-rays decreases, but the X-rays 2 irradiated onto the plates 5 and 6 also diffractize. Thus, the X-ray detector 30 acts as noise. In addition, in performing the X-ray diffraction analysis, there is a problem in that the X-ray 2 must be scanned at a critical angle or more, and the wavelength of the X-ray 2 used is also fixed. To solve this problem, certain diffractive surfaces ((511) or (911) for Si single crystals or (0001 for SiO ₂ ) where diffraction occurs outside the wavelength of the X-ray (2) and the angle range that the diffractometer can measure. There is a problem that the sample holder of 6) cut to 6 ° in the stockpile, but the sample holder consisting of Si single crystal and SiO ₂ is not economical because the manufacturing cost is high.

Therefore, the present invention has been made to solve the above problems, according to an embodiment of the present invention, by applying an anti-reflective sample holder for X-ray diffraction using a silicon single crystal axis, the non-sample portion or the bottom of the sample cavity The present invention provides an X-ray diffraction analysis system and method in which diffraction does not occur even when X-rays are irradiated onto the sample holders of X-rays without limitation.

Therefore, the anti-reflective sample holder for X-ray diffraction using the silicon single crystal stockpile according to an embodiment of the present invention does not produce diffraction even when X-rays are irradiated to the stock plate other than the sample even at a low irradiation angle. Only the X-rays irradiated and reflected at a specific diffraction angle can be detected, thereby reducing noise. In addition, since a single crystal silicon wafer is used as a material for manufacturing the sample holder, the sample holder can be manufactured more economically.

Other objects, specific advantages and novel features of the present invention will become more apparent from the following detailed description and preferred embodiments in conjunction with the accompanying drawings.

According to a first aspect of the present invention, there is provided a method for manufacturing a sample holder, comprising: providing a single crystal silicon ingot to a cutting means such that a crystal growth axis and a vertical axis of the single crystal silicon ingot are at a specific angle; Cutting a single crystal silicon ingot to a predetermined thickness by cutting means to produce a plurality of stockpiled wafers having a stockpile having a specific angle with the cut surface; Cutting a stock wafer by cutting means to produce a plurality of stock plates provided in a rectangular shape; And it can be achieved as a method for producing an anti-reflective sample holder for X-ray diffraction using the stockpile of a silicon single crystal, characterized in that it comprises a cavity for mounting the sample on the stockpile plate.

The specific angle may be characterized by 4.5 to 5.5 °.

The stock plate has a stock surface at a specific angle with the horizontal surface,

When the X-rays are irradiated to the sample holder at a predetermined angle, the X-rays irradiated onto the stock plate having a non-axis surface are not reflected, and only the X-rays scanned at the sample created in the cavity are reflected at a predetermined diffraction angle. You can do

In the stockpile wafer fabrication step, the single crystal silicon ingot may be cut by a diamond saw, a wire saw, or a laser beam to produce a stockpile wafer having a stockpile surface.

A second object of the present invention is to provide a sample holder manufactured by a manufacturing method, comprising: a stock plate having a stock plane having a specific angle with a horizontal plane; And a cavity in which a sample is mounted and formed in the stock plate, to thereby achieve the anti-reflective sample holder for X-ray diffraction using the stock layer of the silicon single crystal.

The specific angle may be characterized by 4.5 to 5.5 °.

When the X-rays are irradiated to the sample holder at a predetermined angle, the X-rays irradiated onto the sample are reflected with a predetermined diffraction angle, but the X-rays scanned on the non-axis plate having the non-axis surface may not be reflected. .

Irrespective of the irradiation angle irradiated to the sample holder, X-rays irradiated onto the stock plate may not be reflected.

A third object of the present invention is an X-ray diffraction analysis system using a sample holder manufactured by the manufacturing method, comprising: an X-ray generator emitting X-rays; A diffusion slit in which X-rays emitted from the X-ray generator are incident to diffuse X-rays to scan the diffused X-rays into the sample holder; A sample stage having a sample holder having a non-axis surface installed on an upper surface thereof; It can be achieved as an X-ray diffraction analysis system using a sample holder having an axis, characterized in that it comprises an X-ray detector for reflecting the X-rays scanned on the sample holder and diffracted at a predetermined diffraction angle.

The X-ray detector may be characterized by being a one-dimensional detector such as a scintillation counter counter and a proportional counter counter, and a two-dimensional detector such as a charge-coupled device and an imaging plate. have.

The X-ray detector may be characterized by measuring the crystal structure of the sample by detecting the diffraction angle of the X-rays.

The stock plate constituting the sample holder may have a stockpile surface, and a specific angle between the stockpile surface and the horizontal surface may be 4.5 to 5.5 °.

When the X-rays are scanned to the sample holder at a predetermined angle, the X-rays scanned on the sample may be reflected, but the X-rays scanned on the stock plate having the stockpile may not be reflected.

Irrespective of the scanning angle scanned by the sample holder, the X-rays scanned on the stock plate may not be reflected.

It may be characterized in that it further comprises an angle adjusting means connected to the X-ray generator for adjusting the irradiation angle of the X-rays irradiated to the sample holder.

A fourth object of the present invention is an X-ray diffraction analysis method using an anti-reflection sample holder for X-ray diffraction using the silicon single crystal, the method comprising the steps of: emitting X-rays from an X-ray generator; The X-rays emitted from the X-ray generator are diffused by the diffusion slit; Radiating the diffused X-rays to the sample holder at a predetermined angle; X-rays irradiated to the sample holder is reflected by a sample mounted on the sample holder and diffracted at a predetermined diffraction angle; Detecting an X-ray having a diffraction angle through an X-ray detector; And analyzing the sample by measuring the detected X-rays by the analyzing means. X-ray diffraction analysis method using an anti-reflective sample holder for X-ray diffraction using the stockpile of a silicon single crystal may include.

The stock plate constituting the sample holder may have a stockpile surface, and a specific angle between the stockpile surface and the horizontal surface may be 4.5 to 5.5 °.

In the diffraction step, the X-rays irradiated onto the sample may be diffracted at a specific diffraction angle based on the crystal structure of the sample, and the X-rays irradiated onto the stock plate may not be diffracted.

The detecting step and the analyzing step may be characterized in that the X-ray detector is provided with one-dimensional and two-dimensional detectors to measure the crystal structure of the sample to detect the diffraction angle of the X-ray to analyze the sample.

Therefore, as described above, according to one embodiment of the present invention, by applying an anti-reflective sample holder for X-ray diffraction using a silicon single crystal axis to the X-ray diffraction system, even if X-rays are irradiated from a portion other than the sample, the irradiation angle is limited. It has the effect that no diffraction occurs without. Therefore, in the non-reflective sample holder for X-ray diffraction using the silicon single crystal stockpile according to an embodiment of the present invention, even if X-rays are irradiated to the stockpile plate other than the sample at a low irradiation angle, the X-ray detector is not diffracted accordingly. Since only the X-rays irradiated onto the sample and reflected at a specific diffraction angle can be detected, noise can be reduced. In addition, since single crystal silicon is used as a material for manufacturing the sample holder, the sample holder can be manufactured more economically.

In addition, the sample holder manufacturing method has the advantage that it is possible to quickly manufacture dozens of sample holders in one wafer using the same process as the general semiconductor wafer manufacturing method. In addition, even if X-rays are irradiated onto a non-axis-provided stock plate, X-ray diffraction does not occur, and thus data with reduced noise can be obtained for a small amount of sample or a sample having a high permeability to X-rays, so that a more accurate and faster analysis is possible. It is possible and has the advantage of providing simplicity in practice.

Although the present invention has been described in connection with the above-mentioned preferred embodiments, it will be appreciated by those skilled in the art that various other modifications and variations can be made without departing from the spirit and scope of the invention, All fall within the scope of the appended claims.

Figure 1a is a perspective view schematically showing the configuration of a conventional X-ray diffractometer,
Figure 1b is a top view schematically showing the configuration of a conventional X-ray diffractometer,
2A is a graph of intensity of diffracted X-rays according to an irradiation angle at which X-rays are irradiated to single-crystal silicon having no conventional stockpile;
2b is a graph showing the intensity of diffracted X-rays according to the irradiation angle at which X-rays are irradiated onto polycrystalline silicon;
3 is a flow chart of a method of manufacturing an anti-reflection sample holder for X-ray diffraction using a silicon single crystal in accordance with an embodiment of the present invention;
4 is a perspective view schematically showing a state in which a single crystal silicon ingot is installed in a cutting means according to an embodiment of the present invention;
5 is a cross-sectional view of a stockpile wafer having a stockpile in accordance with one embodiment of the present invention;
6 is a top view of a stockpile wafer showing a cutting line to be cut by a cutting means in a stockpile wafer according to an embodiment of the present invention;
7A is a cross-sectional view of a stockpile plate having a cavity according to an embodiment of the present invention;
7B is a top view of a stockpile plate having a cavity according to an embodiment of the present invention;
7C is a cross-sectional view of a stock plate mounted with a sample in a cavity according to an embodiment of the present invention;
8 is a graph of intensity of reflected X-rays according to an irradiation angle Θ,
9 is a cross-sectional view schematically showing the configuration of an X-ray diffraction analysis system using a sample holder using a stockpile according to an embodiment of the present invention;
10 is a flowchart illustrating an X-ray diffraction analysis method using a sample holder using a stockpile according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the detailed description of known functions and configurations incorporated herein will be omitted when it may unnecessarily obscure the subject matter of the present invention.

The same reference numerals are used for portions having similar functions and functions throughout the drawings. Throughout the specification, when a part is 'connected' to another part, this includes not only 'directly connected' but also 'indirectly connected' with another element in between. do. In addition, "including" a certain component does not exclude other components unless specifically stated otherwise, it means that may further include other components.

<Configuration and Manufacturing Method of Sample Holder Using Stock>

Hereinafter will be described the manufacturing method and configuration of the sample holder using the stockpile according to an embodiment of the present invention. The sample holder according to the embodiment of the present invention is used in the X-ray diffraction analysis system 100. The sample holder 70 corresponds to the anti-reflective sample holder 70 for X-ray diffraction using the silicon single crystal. First, FIG. 3 shows a flowchart of a method of manufacturing a sample holder 70 using a stockpile according to an embodiment of the present invention.

As shown in FIG. 3, first, a single crystal silicon semiconductor ingot 40 corresponding to the material of the sample holder 70 is prepared. Then, the single crystal silicon ingot 40 is installed in the wafer cutting means for cutting (Slicing) (S10). In the sample holder 70 manufacturing method according to an embodiment of the present invention, the upper surface (lower surface, specific crystal surface or vertical surface of crystal growth) and the cutting surface of the single crystal silicon ingot 40 are cut while maintaining the specific angle Φ. Work is to proceed (S20). The stockpile 43 described in the specification of the present invention has a direction coincident with the longitudinal axis 43 of the single crystal silicon ingot 40, the vertical axis of a specific crystal surface, or the crystal growth surface, and the stockpile surface 51 has a stockpile ( 43 is a plane perpendicular to the specific crystal plane according to the internal crystal structure of single crystal silicon.

4 is a perspective view schematically showing a state in which a single crystal silicon ingot 40 according to an embodiment of the present invention is installed in a cutting means. As shown in FIG. 4, there is a specific angle Φ between the longitudinal axis (non-axis, 43, specific crystal plane or crystal growth plane) of the single crystal silicon ingot 40 and the vertical axis 42 perpendicular to the cut plane. When the cutting operation is performed, the single crystal silicon ingot 40 is cut parallel to the horizontal plane. The cutting process usually uses a diamond saw, a wire saw 41 or a laser beam as in the case of manufacturing a semiconductor wafer. In the manufacture of the sample holder 70 using the non-axis according to an embodiment of the present invention, the specific angle Φ formed by the vertical axis 42 and the longitudinal axis 43 perpendicular to the cut surface of the single crystal silicon ingot 40 is 4.5 ~ 5.5 °. Preferably this angle is 5 degrees.

5 illustrates a cross-sectional view of a stockpile wafer 50 with a stockpile 51 in accordance with one embodiment of the present invention. As shown in FIG. 5, the stockpile wafer 50 according to the embodiment of the present invention has a stockpile surface 51. In addition, the non-axis surface 51 forms a specific angle Φ with the horizontal surface. The sample holder 70 according to an embodiment of the present invention is characterized by using a stockpile wafer 50 having such a stockpile 51.

Then, the stockpile wafer 50 having the stockpile surface 51 is cut using a cutting means to manufacture a stockpile plate 60 having a rectangular shape (S30). 6 is a top view of the stockpile wafer 50 showing the cutting line 52 to be cut by the cutting means in the stockpile wafer 50 according to one embodiment of the invention. As shown in FIG. 6, in one embodiment, 32 stock plates 60 may be manufactured with one stock wafer 50. Therefore, it is possible to manufacture a myriad of stock plates 60 in one single crystal silicon ingot 40 can solve the economic problems of the conventional sample holder 70 for X-ray diffraction analysis. The stock plate 60 according to an embodiment of the present invention also includes a stock surface 51 forming a horizontal angle and a specific angle Φ, and the horizontal length and the vertical length are each about 15 to 50 mm.

In addition, a cavity 61 in which the sample 3 is mounted is formed on the stock plate 60 (S40). FIG. 7A illustrates a cross-sectional view of a stock plate 60 having a cavity 61 according to an embodiment of the present invention. And, Figure 7b shows a top view of the stockpile plate 60, the cavity 61 is formed in accordance with an embodiment of the present invention. And, Figure 7c shows a cross-sectional view of the stockpile plate 60 mounted with the sample 3 in the cavity 61 according to an embodiment of the present invention. As shown in FIG. 7C, the sample 3 is mounted in the cavity 61 of the stock plate 60 (S50).

7C illustrates a cross-sectional view of the sample holder 70 in the state where the X-ray 2 is scanned in accordance with one embodiment of the present invention. As shown in FIG. 7C, when the X-ray 2 is irradiated to the sample holder 70 at a specific irradiation angle, the X-ray 2 irradiated to the stock plate 60 is not diffracted and the sample 3 is irradiated. It can be seen that only the X-rays 2 irradiated with the reflection have a specific diffraction angle. Therefore, the X-ray diffraction analysis system 100 using the sample holder 70 does not generate noise due to diffraction caused by the upper surface of the stock plate 60 other than the sample 3.

In addition, the stock plate 60 having the stock surface 51 is not reflected regardless of the irradiation angle. 8 shows a graph of intensity of diffracted X-rays according to an irradiation angle Θ. As shown in FIG. 8, it can be seen that the X-ray 2 irradiated to the stock plate 60 is not reflected (diffraction) when the X-ray 2 having a large or small irradiation angle is incident.

<Configuration and Example of X-ray Diffraction Analysis System>

Hereinafter will be described the configuration of the X-ray diffraction analysis system 100 using the sample holder 70 using the stockpile according to an embodiment of the present invention. First, Figure 9 is a cross-sectional view schematically showing the configuration of the X-ray diffraction analysis system 100 using a sample holder 70 using a stockpile according to an embodiment of the present invention. 10 is a flowchart illustrating an X-ray diffraction analysis method using a sample holder 70 using a stock axis according to an embodiment of the present invention.

X-ray diffraction analysis system 100 according to an embodiment of the present invention is similar to the X-ray diffractometer 1 described in the background, but because it uses a sample holder 70 using the axis, the sample holder 70 Diffraction by) and the sample filled in the cavity 61 of the sample holder do not occur, and diffraction by the cavity 61 of the sample holder 70 does not occur.

First, as shown in FIG. 9, an X-ray 2 is generated in the X-ray generator 10 (S100). In addition, the X-ray 2 generated by the X-ray generator 10 is diffused through the diffusion slit 110 (S300). It is possible to adjust the advancing direction of the X-rays 2 by using the angle adjusting means for irradiating the X-rays 2 to the sample holder 70 before entering the diffusion slit 110 (S200). However, since it is not affected by the irradiation angle of the X-ray 2 like the conventional X-ray diffraction analyzer 1, it has a difference from the adjusting step for irradiating above the critical angle.

The X-ray 2 diffused by the diffusion slit 110 is irradiated to the sample holder 70 using the stock axis (S400). The sample holder 70 is coupled to the top surface of the stage 120. 9, the X-ray 2 irradiated to the sample 3 in the sample holder 70 is reflected with a specific diffraction angle according to the crystal structure of the sample 3, and the sample 3 In other words, the X-rays 2 incident on the non-stock plate 60 is not reflected (diffraction) (S500). As described above, the stock plate 60 having the stock plane 51 having a horizontal plane and a specific angle Φ is not reflected even when the X-ray 2 is incident regardless of the irradiation angle.

The X-ray detector 30 detects the X-rays 2 irradiated onto the sample 3 and reflected at a specific diffraction angle (S600). In addition, in an embodiment of the present invention, the receiver may further include a receiving slit, a monochromator, or the like, between the X-ray detector 30 and the sample holder 70. X-ray detector 30 according to an embodiment of the present invention is preferably composed of measuring equipment having a one-dimensional and two-dimensional structure. The X-ray detector 30 detects the X-ray 2 reflected on the sample 3 and measures the specific diffraction angle. This diffraction angle is a value unique to the crystal structure of the sample 3 and is used to determine the distance between the gratings according to the Bragg's law. In addition, the analysis unit 130 connected to the X-ray detector 30 analyzes the crystal structure of the sample 3 based on the diffraction angle to obtain information about the sample 3 (S700).

1: Conventional X-ray Diffractometer
2: X-ray
3: Sample
4: Conventional sample holder
5: Conventional Monocrystalline Silicon Plate
6: polycrystalline silicon plate
10: X-ray generator
20: Stage 1
21: second stage
30: X-ray detector
40: single crystal silicon ingot
41: wire of cutting means
42: vertical axis
43: Reserve
50: specific angle
51: stockpile
52: cutting line
60: stock plate
61: cavity
70: sample holder
100: X-ray diffraction analysis system
110: diffusion slit
120: Stage
130: analysis means
2Θ: diffraction angle
Φ: specific angle

Claims (19)

In the sample holder manufacturing method,
Installing the single crystal silicon ingot in the cutting means such that the crystal growth axis of the single crystal silicon ingot is at a specific angle with the vertical axis of the cutting means;
Manufacturing the plurality of stockpiling wafers by cutting the single crystal silicon ingot to a predetermined thickness such that the cutting means has a specific angle between the cutting surface and the stockpile surface;
Cutting the stock wafer by cutting means to produce a plurality of stock plates provided in a rectangular shape; And
A method of manufacturing an anti-reflection sample holder for X-ray diffraction using the stockpile of silicon single crystals, the method comprising: forming a cavity to mount the sample on the stockpile plate. The method of claim 1,
The specific angle is 4.5 ~ 5.5 ° The anti-reflective sample holder manufacturing method for X-ray diffraction using a silicon single crystal, characterized in that the. 3. The method of claim 2,
The stock plate has a horizontal surface and a stock surface forming the specific angle,
When X-rays are irradiated to the sample holder at a predetermined angle, the X-rays irradiated onto the stock plate having a non-axis surface are not reflected, and only the X-rays scanned on the sample created in the cavity have a predetermined diffraction angle. A method for producing an anti-reflective sample holder for X-ray diffraction using a silicon single crystal, which is characterized in that the reflection is reflected. The method of claim 1,
In the stockpile wafer manufacturing step,
A method of manufacturing an anti-reflection sample holder for X-ray diffraction using a silicon single crystal stockpile, wherein the single wafer has a stockpile surface formed by cutting the single crystal silicon ingot with a diamond saw, a wire saw or a laser beam. In the sample holder manufactured by the manufacturing method of claim 1,
A stock plate having a stock plane having a specific angle with the horizontal surface; And
And a cavity formed on the stock plate to mount the sample thereon; and an anti-reflective sample holder for X-ray diffraction using the stockpile of the silicon single crystal. The method of claim 5, wherein
The specific angle is 4.5 ~ 5.5 °, the anti-reflective sample holder for the X-ray diffraction using a silicon single crystal. The method of claim 5, wherein
When the X-ray is irradiated to the sample holder at a predetermined angle,
The X-rays irradiated onto the sample are reflected with a predetermined diffraction angle, but the X-rays scanned on the stock plate having a non-axis surface are not reflected. Sample holder. The method of claim 7, wherein
And the X-rays irradiated onto the stock plate are not reflected, irrespective of the irradiation angle irradiated to the sample holder. In the X-ray diffraction analysis system using a sample holder produced by the manufacturing method of claim 1,
An X-ray generator emitting X-rays;
A diffusion slit scanning the X-ray diffused by the X-ray emitted from the X-ray generator and diffusing the X-ray to the sample holder;
A sample stage in which the sample holder having a non-axis surface is installed on an upper surface thereof; And
And an X-ray detector for reflecting the X-rays scanned by the sample holder and diffracted at a predetermined diffraction angle. The method of claim 9,
The X-ray diffraction analysis system using a sample holder having a non-axis, characterized in that the X-ray detector is at least one of one and two-dimensional detector. The method of claim 9,
And the X-ray detector analyzes a phase analysis or a crystal structure of the sample by detecting a diffraction angle of the X-rays. The method of claim 9,
The stock plate constituting the sample holder has a stock surface,
X-ray diffraction analysis system using a sample holder having a non-axis, characterized in that the specific angle between the non-axis and horizontal plane is 4.5 ~ 5.5 °. The method of claim 9,
When scanning the X-ray to the sample holder at a predetermined angle,
X-ray diffraction analysis system using a sample holder having a non-axis, characterized in that the X-rays scanned on the sample is reflected, but the X-rays scanned on the non-axis stock plate. The method of claim 13,
The X-ray diffraction analysis system using a sample holder having a stock axis, characterized in that the X-ray scanned on the stock plate is not reflected irrespective of the scanning angle scanned by the sample holder. The method of claim 13,
And an angle adjusting means connected to the X-ray generator to adjust an irradiation angle of the X-ray irradiated to the sample holder. In the X-ray diffraction analysis method using a non-reflective sample holder for X-ray diffraction using the axis of the silicon single crystal of claim 5,
Emitting X-rays from the X-ray generator;
Diffusing the X-rays emitted from the X-ray generator by the diffusion slit;
Radiating the diffused X-rays to the sample holder at a predetermined angle;
The X-rays irradiated onto the sample holder are reflected by a sample mounted on the sample holder and diffracted at a predetermined diffraction angle;
Detecting an X-ray having a diffraction angle through an X-ray detector; And
Analyzing means for analyzing the sample by measuring the detected X-rays; X-ray diffraction analysis method using a non-reflective sample holder for X-ray diffraction using a silicon single crystal. 17. The method of claim 16,
The non-reflective sample holder for X-ray diffraction using the non-reflective sample holder of the silicon single crystal, characterized in that the non-stock plate constituting the sample holder has a non-axis surface, the specific angle between the non-axis surface and the horizontal surface is 4.5 ~ 5.5 °. X-ray diffraction analysis method. The method of claim 17,
In the diffraction step,
The X-rays irradiated onto the sample are diffracted at a specific diffraction angle based on the crystal structure of the sample, and the X-rays irradiated onto the stock plate are not diffracted. X-ray diffraction analysis method using antireflective sample holder for diffraction. 17. The method of claim 16,
The detecting step and the analyzing step,
The X-ray detector is provided with at least one of the one-dimensional and two-dimensional detector to detect the diffraction angle of the X-ray, to analyze the sample by measuring the diffraction data to analyze the phase analysis or crystal structure of the sample X-ray diffraction analysis method using a non-reflective sample holder for X-ray diffraction using a silicon single crystal stockpile.

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