JP3274276B2 - Photoconductive liquid crystal light valve - Google Patents

Photoconductive liquid crystal light valve

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Publication number
JP3274276B2
JP3274276B2 JP09759794A JP9759794A JP3274276B2 JP 3274276 B2 JP3274276 B2 JP 3274276B2 JP 09759794 A JP09759794 A JP 09759794A JP 9759794 A JP9759794 A JP 9759794A JP 3274276 B2 JP3274276 B2 JP 3274276B2
Authority
JP
Japan
Prior art keywords
light
liquid crystal
film
photoconductive
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP09759794A
Other languages
Japanese (ja)
Other versions
JPH07306401A (en
Inventor
賢司 吉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Corp
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Filing date
Publication date
Application filed by Pioneer Corp filed Critical Pioneer Corp
Priority to JP09759794A priority Critical patent/JP3274276B2/en
Publication of JPH07306401A publication Critical patent/JPH07306401A/en
Application granted granted Critical
Publication of JP3274276B2 publication Critical patent/JP3274276B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Liquid Crystal (AREA)
  • Projection Apparatus (AREA)
  • Video Image Reproduction Devices For Color Tv Systems (AREA)
  • Light Guides In General And Applications Therefor (AREA)

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、光線束に投影画像を付
与しつつこれを反射する光導電型液晶ライトバルブ(以
下、LCLVという)を有し、該反射光を投影レンズ系
により投射する投射型表示装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention has a photoconductive liquid crystal light valve (hereinafter, referred to as LCLV) for reflecting a light beam while giving a projected image, and projects the reflected light by a projection lens system. The present invention relates to a projection display device.

【0002】[0002]

【従来の技術】図1は、このLCLV1の構成を示す。
液晶層11は、その周りのスペーサ12及び配向膜1
3、14によって画定されている。像が描かれる光導電
膜15は、誘電体からなる反射膜16(誘電体ミラー)
及び遮光膜17を介して配向膜14側に積層されてい
る。配向膜13の読み出し側面には透明電極18が配さ
れ、光導電膜15の書き込み側面には電極19が配され
ている。これら液晶層11、光導電膜15等は一対のガ
ラス基板20、21によって挾持されている。
2. Description of the Related Art FIG. 1 shows the structure of an LCLV1.
The liquid crystal layer 11 includes a spacer 12 and an alignment film 1 around the liquid crystal layer 11.
3, 14. The photoconductive film 15 on which an image is drawn is a reflective film 16 (dielectric mirror) made of a dielectric.
And a light-shielding film 17 interposed therebetween on the alignment film 14 side. A transparent electrode 18 is disposed on the read side surface of the alignment film 13, and an electrode 19 is disposed on the write side surface of the photoconductive film 15. The liquid crystal layer 11, the photoconductive film 15, and the like are sandwiched between a pair of glass substrates 20, 21.

【0003】透明電極18、19間に交流電圧が印加さ
れるLCLV1において、CRTにより図の右側(書き
込み側)から入射した画像書き込み光によって光導電膜
15上に像を描いたとき、光導電膜15の内部抵抗が像
の明暗(受光量の変化)に従って局部的に低く又は高く
なる変化をするために、光導電膜の変化部分に対応する
隣接する液晶層11の内部は透明電極18、19間の交
流電圧が印加され、像の明暗に従って、液晶分子が空間
変調され複屈折率が生じる。
In an LCLV1 in which an AC voltage is applied between the transparent electrodes 18 and 19, when an image is drawn on the photoconductive film 15 by CRT from an image writing light incident from the right side (writing side) in the drawing, the photoconductive film Since the internal resistance of the liquid crystal layer 15 changes locally to become lower or higher in accordance with the brightness of the image (change in the amount of received light), the inside of the adjacent liquid crystal layer 11 corresponding to the changed portion of the photoconductive film is made of transparent electrodes 18 and 19. When an alternating voltage is applied between the two, the liquid crystal molecules are spatially modulated according to the brightness of the image, and a birefringence is generated.

【0004】図2に示すように、かかる投射型液晶表示
装置のLCLV1の光導電膜側基板は、CRT2のフロ
ントフェイスに結合されている。CRTは、そのフロン
トフェイスに表示された像をファイバーオプティカルプ
レートを介してLCLV1の光導電膜に書き込む。光導
電膜の電位に応じて液晶層の投影画像の濃淡が形成され
る。一方、メタルハライドランプ等の光源3からリフレ
クタによって略平行光線となって発せられた光束は、偏
光板等の光学素子を経て、偏光ビームスプリッタ6に入
射する。この入射光のうちP偏光成分は、偏光ビームス
プリッタ6を通過する。S偏光成分は、偏光ビームスプ
リッタ6で進行方向が曲げられてLCLV1に入射す
る。
As shown in FIG. 2, the photoconductive film side substrate of the LCLV 1 of such a projection type liquid crystal display device is connected to the front face of the CRT 2. The CRT writes the image displayed on the front face to the photoconductive film of the LCLV1 via the fiber optical plate. The density of the projected image on the liquid crystal layer is formed according to the potential of the photoconductive film. On the other hand, a light flux emitted from the light source 3 such as a metal halide lamp as a substantially parallel light beam by the reflector enters the polarization beam splitter 6 via an optical element such as a polarizing plate. The P-polarized light component of the incident light passes through the polarization beam splitter 6. The traveling direction of the S-polarized light component is bent by the polarization beam splitter 6, and is incident on the LCLV1.

【0005】ここで、LCLV1の液晶層にCRTの画
像に対応した複屈折率が生じていると、LCLVにおい
て反射された反射光中では液晶層の複屈折率に応じてS
偏光成分がP偏光成分に変換される。そして、このP偏
光成分が偏光ビームスプリッタ6をそのまま通過するこ
とにより、このP偏光成分すなわち投影光が投影レンズ
8を介してスクリーン9上に投影される。
Here, if a birefringence corresponding to the image of the CRT is generated in the liquid crystal layer of the LCLV1, if the reflected light reflected by the LCLV has a birefringence in accordance with the birefringence of the liquid crystal layer.
The polarization component is converted to a P polarization component. Then, the P-polarized light component passes through the polarizing beam splitter 6 as it is, so that the P-polarized light component, that is, the projection light is projected onto the screen 9 via the projection lens 8.

【0006】[0006]

【発明が解決しようとする課題】黒色薄膜である遮光膜
には、光源からの強い投射光を光導電膜に入射させない
だけの遮光性と、電圧分布が広がらず分解能を落とさな
いだけの高いインピーダンス絶対値とが要求される。し
かしながら、これら両特性を満たす単一物質からなる単
層の遮光膜を得ることは難しい。また、たとえ複数の光
吸収物質を混合して遮光膜としても、所定スペクトルの
吸収光量の少ない物質即ち、光吸収スペクトルの弱い光
吸収物質の吸収光量に合わせた膜厚設定をしなければな
らず、膜厚が必要以上の膜厚になっていた。必要以上の
遮光膜膜厚ではLCLVの液晶層インピーダンスの変化
幅が十分に得ることが出来ない。
The light-shielding film, which is a black thin film, has a light-shielding property that does not allow strong projection light from a light source to enter the photoconductive film, and a high impedance that does not widen the voltage distribution and reduce the resolution. Absolute value is required. However, it is difficult to obtain a single-layer light-shielding film made of a single substance that satisfies both these characteristics. Even if a light-shielding film is formed by mixing a plurality of light-absorbing substances, the film thickness must be set in accordance with the amount of light absorbed by a substance having a small amount of light absorption in a predetermined spectrum, that is, a light-absorbing substance having a weak light absorption spectrum. And the film thickness was more than necessary. If the thickness of the light-shielding film is larger than necessary, a sufficient change width of the LCLV liquid crystal layer impedance cannot be obtained.

【0007】本発明の目的は、遮断すべき光波長の選択
が可能であるとともに高インピーダンスを有し遮光性の
高い遮光膜を有するLCLVを提供することにある。
An object of the present invention is to provide an LCLV having a light-shielding film which has a high impedance and a high light-shielding property, and which can select a light wavelength to be cut off.

【0008】[0008]

【課題を解決するための手段】本発明のLCLVは、対
向する一対の書き込み側及び読み出し側透明基板と、前
記透明基板の各々の内側面に積層された対向する一対の
書き込み側及び読み出し側透明電極と、前記透明電極間
において前記書き込み側透明電極から光導電膜、遮光
膜、反射膜及び液晶層が順に配置された導電型液晶ライ
トバルブであって、前記遮光膜は、各々が光吸収物質を
含む薄膜の複数からなりかつ前記光吸収物質が互いに異
なる光吸収スペクトル分布を有することを特徴とする。
The LCLV of the present invention comprises a pair of opposing write-side and read-side transparent substrates, and a pair of opposing write-side and read-side transparent substrates laminated on the respective inner surfaces of the transparent substrates. An electrode and a conductive liquid crystal light valve in which a photoconductive film, a light shielding film, a reflective film, and a liquid crystal layer are sequentially arranged from the writing side transparent electrode between the transparent electrodes, wherein the light shielding film is formed of a light absorbing material. And the light-absorbing substances have different light absorption spectrum distributions from each other.

【0009】[0009]

【作用】本発明によれば、遮断すべき光波長の選択が可
能な多層黒色絶縁膜である遮光膜を備えるので、高い分
解能のLCLVが得られる。
According to the present invention, a light-shielding film which is a multilayer black insulating film capable of selecting a light wavelength to be cut off is provided, so that a high resolution LCLV can be obtained.

【0010】[0010]

【実施例】以下に本発明による実施例を図面を参照しつ
つ説明する。図3に本実施例を示す。LCLV1は、各
々が光吸収物質を含む薄膜17a,17b,17cの複
数、例えば3つからなる多層黒色絶縁膜117とし、該
多層黒色絶縁膜すなわち遮光膜の光吸収物質が互いに異
なる光吸収スペクトル分布を有する以外は、図1に示す
LCLVと同一の構造を有する。なお、図3において
は、その書き込み側ガラス基板をファイバーオプティカ
ルプレートからなる基板21aとし、CRT2をそのフ
ロントフェイスをファイバーオプティカルプレートから
なる基板2aとした以外は図2に示すCRTと同一の構
造を有する。LCLV及びCRTのファイバーオプティ
カルプレート間は、シリコンゲル、グリセリン等からな
る接合層30にて接合されている。
Embodiments of the present invention will be described below with reference to the drawings. FIG. 3 shows this embodiment. The LCLV 1 is a multilayer black insulating film 117 composed of a plurality of, for example, three, thin films 17a, 17b, 17c each containing a light absorbing material, and the light absorbing material distribution of the multilayer black insulating film, ie, the light shielding film, is different from each other. Except that it has the same structure as the LCLV shown in FIG. 3 has the same structure as the CRT shown in FIG. 2 except that the writing-side glass substrate is a substrate 21a made of a fiber optical plate and the CRT 2 is a substrate 2a made of a fiber optical plate. . The fiber optical plates of the LCLV and the CRT are joined by a joining layer 30 made of silicon gel, glycerin or the like.

【0011】遮光膜117の第1層17a、第2層17
b及び第3層17cはそれぞれ、互いに異なる光吸収ス
ペクトル分布を有するニッケル(Ni)、コバルト(Co)及び
バナジウム(V)からなる薄膜であり、それぞれの膜厚は
500nm以下、600nm〜700nm及び700nm〜90
0nmの範囲で形成される。さらに好ましくは、それぞれ
の第1層17a、第2層17b及び第3層17cに二酸
化ケイ素(SiO2)を添加して混合物とし、おのおのが
分散した状態の多層黒色薄膜としてもよい。Ni、Co及び
Vのほかにマンガン(Mn)も遮光膜の光吸収物質とし
て用い得る。すなわち、これら光吸収物質の薄膜の組合
せで光吸収スペクトルの重畳により遮断すべき光波長の
選択の幅を拡大させることができる。さらに、SiO2
の添加により遮光膜のインピーダンス絶対値を向上させ
ることができる。かかる光吸収物質Ni、Co、V及び
MnのSiO2混合物薄膜の単層における光吸収スペク
トル分布特性を図4、5、6及び7に示す。
The first layer 17a and the second layer 17 of the light shielding film 117
b and the third layer 17c are thin films made of nickel (Ni), cobalt (Co) and vanadium (V) having different light absorption spectrum distributions, respectively, and have a thickness of 500 nm or less, 600 nm to 700 nm and 700 nm, respectively. ~ 90
It is formed in a range of 0 nm. More preferably, each of the first layer 17a, the second layer 17b, and the third layer 17c may be mixed with silicon dioxide (SiO 2 ) to form a multilayer black thin film in which each is dispersed. Ni, Co and
In addition to V, manganese (Mn) can also be used as a light absorbing material of the light shielding film. That is, by combining the thin films of these light absorbing substances, the range of selection of the light wavelength to be cut off can be expanded by superimposing the light absorption spectrum. Furthermore, SiO 2
Can increase the absolute value of the impedance of the light-shielding film. FIGS. 4, 5, 6, and 7 show the light absorption spectrum distribution characteristics of a single layer of the SiO 2 mixture thin film of the light absorbing substances Ni, Co, V, and Mn.

【0012】遮光膜117の製法としては、RF若しく
は直流スパッタリング法、EB蒸着法が用いられ得る。
各薄膜の膜厚比は適宜設定される。例えば、図8に、そ
れぞれにSiO2を添加し第1層Ni、第2層Co及び
第3層Vの具体的に作成した混合物多層遮光膜の光吸収
スペクトル分布特性を示す。この場合のNi層、Co層
及びV層の膜厚比は、Ni:Co:V=1:1:1であ
る。さらに、図9に示すように、膜厚比Ni:V=3:
1のNi層及びV層のSiO2添加2層型遮光膜であっ
ても、Ni層の単層の場合(図4)よりも、波長約40
0nm付近の鋭い吸収特性が得られる。
As a method for manufacturing the light shielding film 117, an RF or DC sputtering method or an EB vapor deposition method can be used.
The thickness ratio of each thin film is appropriately set. For example, FIG. 8 shows a light absorption spectrum distribution characteristic of a mixture multilayer light-shielding film specifically formed of a first layer Ni, a second layer Co, and a third layer V by adding SiO 2 to each. In this case, the thickness ratio of the Ni layer, the Co layer, and the V layer is Ni: Co: V = 1: 1: 1. Further, as shown in FIG. 9, the film thickness ratio Ni: V = 3:
Even in the case of the two-layer type light-shielding film containing SiO 2 of the first Ni layer and the V layer, the wavelength is about 40 times larger than that of the single Ni layer (FIG. 4).
A sharp absorption characteristic near 0 nm is obtained.

【0013】[0013]

【発明の効果】以上の如く、本発明によれば対向する一
対の書き込み側及び読み出し側透明基板と、透明基板の
各々の内側面に積層された対向する一対の書き込み側及
び読み出し側透明電極と、透明電極間において書き込み
側透明電極から光導電膜、遮光膜、反射膜及び液晶層が
順に配置された導電型液晶ライトバルブであって、遮光
膜は、各々が光吸収物質を含む薄膜の複数からなりかつ
光吸収物質が互いに異なる光吸収スペクトル分布を有す
るので、遮断すべき光波長の選択が可能な高い解像度を
有したLCLVが得られる。
As described above, according to the present invention, a pair of opposing write-side and read-side transparent substrates, and a pair of opposing write-side and read-side transparent electrodes laminated on each inner surface of the transparent substrate are provided. A conductive liquid crystal light valve in which a photoconductive film, a light-shielding film, a reflective film, and a liquid crystal layer are sequentially arranged from a writing-side transparent electrode between transparent electrodes, wherein the light-shielding film includes a plurality of thin films each containing a light-absorbing substance. And the light absorbing substances have different light absorption spectrum distributions from each other, so that an LCLV with high resolution capable of selecting a light wavelength to be blocked can be obtained.

【図面の簡単な説明】[Brief description of the drawings]

【図1】LCLVの概略を示す構造図である。FIG. 1 is a structural diagram schematically showing an LCLV.

【図2】LCLVを用いた投射型表示装置の概略を示す
構造図である。
FIG. 2 is a structural diagram schematically showing a projection display device using an LCLV.

【図3】実施例のLCLVの概略を示す構造図である。FIG. 3 is a structural diagram schematically showing an LCLV of an example.

【図4】入射波長と光吸収係数との関係を示す光吸収ス
ペクトル分布特性のグラフである。
FIG. 4 is a graph of light absorption spectrum distribution characteristics showing a relationship between an incident wavelength and a light absorption coefficient.

【図5】入射波長と光吸収係数との関係を示す光吸収ス
ペクトル分布特性のグラフである。
FIG. 5 is a graph of light absorption spectrum distribution characteristics showing a relationship between an incident wavelength and a light absorption coefficient.

【図6】入射波長と光吸収係数との関係を示す光吸収ス
ペクトル分布特性のグラフである。
FIG. 6 is a graph of light absorption spectrum distribution characteristics showing a relationship between an incident wavelength and a light absorption coefficient.

【図7】入射波長と光吸収係数との関係を示す光吸収ス
ペクトル分布特性のグラフである。
FIG. 7 is a graph of a light absorption spectrum distribution characteristic showing a relationship between an incident wavelength and a light absorption coefficient.

【図8】本実施例における入射波長と光吸収係数との関
係を示す光吸収スペクトル分布特性のグラフである。
FIG. 8 is a graph of light absorption spectrum distribution characteristics showing a relationship between an incident wavelength and a light absorption coefficient in the present embodiment.

【図9】本実施例における入射波長と光吸収係数との関
係を示す光吸収スペクトル分布特性のグラフである。
FIG. 9 is a graph of light absorption spectrum distribution characteristics showing a relationship between an incident wavelength and a light absorption coefficient in the present embodiment.

【主要部分の符号の説明】[Explanation of Signs of Main Parts]

11 液晶層 12 スペーサ 13、14 配向膜 15 光導電膜 16 反射膜(誘電体ミラー) 117 分散膜(遮光膜) 18,19 透明電極 20、21 ガラス基板 DESCRIPTION OF SYMBOLS 11 Liquid crystal layer 12 Spacer 13, 14 Alignment film 15 Photoconductive film 16 Reflection film (dielectric mirror) 117 Dispersion film (light shielding film) 18, 19 Transparent electrode 20, 21 Glass substrate

───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7,DB名) G02F 1/135 G02F 1/1335 500 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 7 , DB name) G02F 1/135 G02F 1/1335 500

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 対向する一対の書き込み側及び読み出し
側透明基板と、前記透明基板の各々の内側面に積層され
た対向する一対の書き込み側及び読み出し側透明電極
と、前記透明電極間において前記書き込み側透明電極か
ら光導電膜、遮光膜、反射膜及び液晶層が順に配置され
た導電型液晶ライトバルブであって、前記遮光膜は、各
々が光吸収物質を含む薄膜の複数からなりかつ前記光吸
収物質が互いに異なる光吸収スペクトル分布を有するこ
とを特徴とする光導電型液晶ライトバルブ。
1. A pair of opposing write-side and read-side transparent substrates, a pair of opposing write-side and read-side transparent electrodes laminated on inner surfaces of each of the transparent substrates, and the writing between the transparent electrodes. A conductive liquid crystal light valve in which a photoconductive film, a light-shielding film, a reflective film, and a liquid crystal layer are sequentially arranged from a side transparent electrode, wherein the light-shielding film includes a plurality of thin films each containing a light-absorbing substance. A photoconductive liquid crystal light valve, wherein the absorbing substances have different light absorption spectrum distributions.
【請求項2】 前記遮光膜の各々が前記光吸収物質と二
酸化ケイ素とが互いに分散した混合物からなることを特
徴とする請求項1記載の光導電型液晶ライトバルブ。
2. A photoconductive liquid crystal light valve according to claim 1, wherein each of said light shielding films is made of a mixture of said light absorbing substance and silicon dioxide dispersed in each other.
JP09759794A 1994-05-11 1994-05-11 Photoconductive liquid crystal light valve Expired - Fee Related JP3274276B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP09759794A JP3274276B2 (en) 1994-05-11 1994-05-11 Photoconductive liquid crystal light valve

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP09759794A JP3274276B2 (en) 1994-05-11 1994-05-11 Photoconductive liquid crystal light valve

Publications (2)

Publication Number Publication Date
JPH07306401A JPH07306401A (en) 1995-11-21
JP3274276B2 true JP3274276B2 (en) 2002-04-15

Family

ID=14196653

Family Applications (1)

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