JP3267418B2 - Field emission cathode device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a field emission cathode device known as a cold cathode, and is particularly suitable for use as a cathode of a display device.

[0002]

2. Description of the Related Art An electric field applied to a metal or semiconductor surface is 10
^At about ⁹ [V / m], electrons pass through the barrier and emit electrons in a vacuum even at room temperature due to the tunnel effect.
This is called field emission, and a cathode that emits electrons based on such a principle is called a field emission cathode (Fi
eld Emission Cathode). In recent years, it has become possible to produce a surface emission type field emission cathode device comprising a micron-sized field emission cathode by making full use of semiconductor microfabrication technology. The field emission cathode device is a fluorescent display device, a CRT, and an electronic device. It is being used for microscopes and electron beam devices.

FIG. 11 is a perspective view of a field emission cathode (hereinafter referred to as FEC) device called Spindt type having a resistive layer between an emitter and a cathode. In this figure, a cathode 72 is formed on a substrate 71, and a resistance layer 73 is formed on the cathode 72. A cone-shaped emitter 76 is formed on the resistance layer 73. Further, a gate 75 is provided on the cathode 72 with an insulating layer 74 interposed therebetween, and an opening in which the tip of a cone-shaped emitter 76 provided in the round opening of the gate 75 is opened to the gate. It is coming from.

The pitch between the emitters 76 can be set to 10 μm or less, and tens of thousands to hundreds of thousands of such emitters can be provided on one substrate 71. In this FEC element, since the distance between the gate and the cathode can be made submicron,
Electrons can be emitted from the emitter 76 by applying a voltage V _GE of only several tens of volts between the cathodes. In this manner, the electrons emitted from the emitter 76 can be collected on the anode 77 to which the positive voltage _VA is applied while being separated on the gate 75. If a phosphor is provided on the anode 77, a display device using an FEC element can be formed.

Incidentally, a resistor layer 73 is provided under the emitter 76.
Is provided for the following reason. In a general FEC, the distance between the tip of the cone-shaped emitter and the gate is set to an extremely short distance of submicron, and tens of thousands of emitters are provided on one substrate. The emitter and the gate may be short-circuited by dust or the like. As described above, if any one of the gate and the emitter is short-circuited, it means that the cathode and the gate are short-circuited, so that no voltage is applied to all the emitters, and the FEC element becomes inoperable.

Further, local degassing occurs during the initial operation of the FEC, and this gas may cause discharge between the emitter and the gate or the anode, so that a large current flows to the cathode and the cathode is destroyed. There was something. Furthermore, since electrons are likely to be concentrated and emitted from an emitter that easily emits electrons out of a large number of emitters, current is concentrated on the emitter and an abnormally bright spot may be generated on a screen. Conventionally, in order to prevent these disadvantages in operation, a resistance layer 73 is provided between the gate and the emitter.

That is, as shown in FIG.
3, the current of the cathode 72 is suppressed, so that the cathode 72 is not broken. When a current is concentrated on a certain emitter, the voltage drop of the resistance layer 73 provided on the emitter increases, so that the emitter potential increases and the voltage between the gate and the cathode decreases. For this reason, the emitter current is reduced, and the concentration of the emitter current can be prevented. Therefore, by providing the resistance layer 73, it is possible to improve the production yield of the FEC element and perform a stable operation.

However, in the FEC element shown in FIG. 11, since the resistive layer is provided on the entire surface of the substrate, it is difficult to operate the emitters separately and independently, and crosstalk is likely to occur. This crosstalk appears as leakage light emission or leakage current in a display device using an FEC element. In order to prevent such crosstalk, it is necessary to allow the emitter to operate independently for each pixel.

In view of the above, there has been proposed an FEC element in which a cathode is divided into a plurality of stripes and an emitter is provided thereon, and such an FEC element is shown in FIG.
In this figure, a plurality of stripe-shaped cathode lines 82 are formed on a substrate 81 made of glass or the like. A resistance layer 83 is deposited on the substrate 81 on which the cathode lines 82 are formed, and the resistance layer 83 is etched to form the resistance layers 83 only on the cathode lines 82.

Further, an insulating layer 84 is deposited on the substrate 81 from above the resistance layer 83, and a gate line 85 is deposited thereon. Then, by forming an emitter 86 in an opening provided in the gate line 85 and the insulating layer 84, the emitter 86 is formed on the resistance layer 83. The gate line 85 is also formed in a stripe shape, and the cathode line 82 and the gate line 85 can scan an array of a plurality of emitters 86 corresponding to each pixel.

The insulating layer 84 is made of silicon dioxide (Si)
O ₂ ) is generally used, and SnO ₂ , In ₂ O ₃ , Fe ₂ O ₃ , ZnO, amorphous silicon, or the like is used as a material of the resistance layer 83. Further, as the conductor material of the cathode and the gate, Ti, Cr, Nb, M
In general, Mo is used as the material of the emitter such as o and W.

FIG. 13 shows an example of a display device using the FEC element shown in FIG. In this figure, a cathode line 82 is provided on a substrate 81 made of glass or the like, and a resistance layer 83 is provided thereon.
Are formed, and a gate line 85 is formed so as to be orthogonal to the cathode line 82. Further, an array including a plurality of emitters 86 is formed at a portion where the gate line 85 and the cathode line 82 intersect. This array of emitters 86 corresponds to a pixel. Although the insulating layer 84 is not shown in this figure, it is formed on the resistance layer 83 so as to be insulated from the gate line 85. Reference numeral 91 denotes a cathode drive circuit that sequentially drives the plurality of cathode lines 82, 92 denotes a gate drive circuit that drives the plurality of gate lines, and 93 denotes a drive circuit that drives the anode 87 provided with a phosphor.

In the display device shown in FIG. 13, for example, one of the cathode lines 82 is driven by a cathode drive circuit 91. At this time, if image data is applied to the gate line 85, the display is controlled by the image data. The image on the single cathode line is displayed on the anode 87. Accordingly, when the cathode lines 82 are sequentially driven and the image data is sequentially applied to the gate lines 85, an image can be displayed on the anode 87.

[0014]

By the way, in the FEC element shown in FIG. 11, even if a plurality of cathodes are provided separately from each other, cross-talk between the cathodes occurs because the cathodes are connected by the resistance layer. In order to prevent this crosstalk, it is necessary to pattern the resistance layer. However, when the resistance layer is patterned to obtain an FEC element as shown in FIG. 12, a thickness obtained by adding the cathode line 82 and the resistance layer 83 Is formed on the surface, so that F
The step on the surface of the EC element becomes large. Then, when the FEC element is operated at a high voltage, there is a problem that the dielectric breakdown occurs at the edge of the step and the FEC element may be destroyed. Accordingly, it is an object of the present invention to provide an FEC element having the same function as performing patterning of a resistance layer without increasing the level difference on the surface of the FEC element.

[0015]

In order to achieve the above object, the FEC element of the present invention is formed by replacing an impurity-doped amorphous silicon insulating layer having a high resistance value with a resistive layer, Of these, only the portion where the emitter is formed is annealed by, for example, a laser to locally reduce the resistance of the insulating layer.

[0016]

According to the present invention, the resistive layer can be formed only in the portion where the emitter is formed without patterning the insulating layer forming the resistive layer, so that the step on the surface of the FEC is reduced by the thickness of the cathode line. Can be made only a slight step. Further, the resistance value of the resistance layer can be accurately controlled to an arbitrary resistance value depending on the degree of annealing.

[0017]

1 is a sectional view of a field emission cathode device according to a first embodiment of the present invention. In this figure, a stripe-shaped cathode line 2 is formed on a substrate 1 made of glass or the like by vapor deposition, and a first insulating layer 3 is formed on the substrate 1 on which the cathode line 2 is formed. This first insulating layer 3
Is made of an amorphous silicon or polysilicon film doped with an impurity. The portion of the first insulating layer 3 formed on the cathode line 2 is reduced in resistance by annealing to form a resistance region 4 as described later. ing.

Further, a second insulating layer 5 and a gate line 6 are formed on the first insulating layer 3, and a plurality of openings formed in the second insulating layer 5 and the gate line 6 respectively have A cone-shaped emitter 7 is formed. Since the opening is provided only on the resistance region 4, the emitter 7 is also formed only on the resistance region 4. According to this field emission cathode device, only the portion of the first insulating layer 3 above the cathode line 2 is the local resistance region 4, so that the first insulating layer 3 is not patterned as described later. The resistance region 4 can be formed. For this reason,
As shown in the drawing, the step on the surface of the field emission cathode device can be made substantially only the thickness of the cathode line 2.

FIG. 2 shows a top view of the field emission cathode device shown in FIG. In this figure, a cathode line 2 indicated by a dotted line and a gate line 6 indicated by a solid line are formed in a matrix, and an array of a plurality of emitters 7 is formed at the intersection of the matrix. The cathode line 2 and the gate line 6 are respectively driven by the cathode drive circuit and the gate drive circuit described with reference to FIG.

FIG. 3 shows a means for lowering the resistance by annealing only the portion of the first insulating layer 3 above the cathode line 2. In this figure, a stripe-shaped cathode line 2 is formed on a substrate 1, and a first insulating layer 3 doped with impurities is formed thereon. In this state,
The illustrated photomask 8 is placed on the first insulating layer 3 and, for example, a laser is irradiated from above the photomask 8. Then, the laser that has passed through the photomask 8 is applied only to the first insulating layer 3 on the cathode line 2 of the first insulating layer 3, and the temperature of this portion instantaneously rises. Therefore, the portion of the first insulating layer 3 irradiated with the laser is annealed, and the resistance of the annealed portion is reduced.

Therefore, only the portion of the first insulating layer 3 above the cathode line 2 can be the resistance region 4 as shown in FIG. Note that it is preferable to use a XeCl excimer laser (wavelength λ = 308 nm) as the laser. The laser irradiation time at this time is about 0.1 second. Alternatively, annealing may be performed using a lamp instead of laser. Further, the first insulating layer 3 may be formed of an amorphous silicon or polysilicon film formed by a low pressure CVD method, a plasma CVD method, a sputter deposition method, an electron beam deposition method, or a resistance heating deposition method. In this case, the amorphous silicon film formed by a commonly used sputter deposition method or plasma CVD method has a resistance value of about 10 ⁷ to 10 ¹² Ωcm, and thus the amorphous silicon film having a high resistance value is used as an insulating layer. You can do it.

P, Bi, Ga, In, Tl, or the like can be used as a material of an impurity to be doped into such an insulating layer. When the insulating layer doped with such an impurity is annealed by a laser, And a low-resistance amorphous silicon or polysilicon film. In this case, the resistance value of the insulating layer can be adjusted to an arbitrary resistance value of 10 ¹ to 10 ⁶ Ωcm depending on the laser irradiation conditions. Therefore, the portion of the annealed insulating layer can be used as a resistor having a desired resistance value.

The material of the cathode line 2 is as follows.
The material does not change even if the temperature is increased by laser irradiation.
High melting point materials such as b, Ta and W are used. The second insulating layer 5 is generally formed by sputtering SiO ₂ or the like. However, if the second insulating layer 5 is formed of a light-transmitting material such as SiO or SiN, the second insulating layer 5 is formed.
Laser irradiation may be performed after the formation.

Next, an embodiment of the second field emission cathode device of the present invention is shown in FIG. In this figure, a stripe-shaped cathode line 2 is formed on a transparent substrate 1 such as glass.
Is formed by vapor deposition, and a first insulating layer 3 is formed on the substrate 1 on which the cathode lines 2 are formed. The first insulating layer 3 is made of an amorphous silicon or polysilicon film doped with an impurity, and a portion of the first insulating layer formed other than on the cathode line 2 is reduced in resistance by annealing as described later. The resistance region 4 is formed.

Further, a second insulating layer 5 and a gate line 6 are formed on the first insulating layer 3, and a number of openings formed in the second insulating layer 5 and the gate line 6 respectively have A cone-shaped emitter 7 is formed. Since the opening is provided only in the resistance region 4, the emitter 7 is also formed only on the resistance region 4. According to this field emission cathode device, since only the portion of the first insulating layer 3 between the cathode lines 2 is the resistance region 4, the first insulating layer 3 is locally patterned without being patterned as described later. The resistance region 4 can be formed. For this reason, as shown in the figure, the step on the surface of the field emission cathode element can be made substantially equal to the thickness of the cathode line 2.

FIG. 5 is a top view of the field emission cathode device shown in FIG. In this figure, a cathode line 2 indicated by a dotted line and a gate line 6 indicated by a solid line are formed in a matrix, and an array of a plurality of emitters 7 is formed at the intersection of the matrix. The cathode line 2 and the gate line 6 are respectively driven by the cathode drive circuit and the gate drive circuit described with reference to FIG.

Next, means for lowering the resistance by annealing only the portion of the first insulating layer 3 between the cathode lines 2 is shown in FIG. In this figure, a stripe-shaped cathode line 2 is formed on a substrate 1, and a first insulating layer 3 doped with impurities is formed thereon. In this state,
The first insulating layer 3 is irradiated with, for example, a laser from below the substrate 1 using the cathode line 2 as a photomask. Then, the laser that has passed through the portion between the cathode lines 2 is irradiated on the first insulating layer 3, and the temperature of the irradiated portion instantaneously rises. Here, a stripe-shaped mask layer is formed in advance in a portion where the separation between the cathode lines 2 is required, so that insulation between the cathode lines is obtained.

For this reason, the portion of the first insulating layer 3 irradiated with the laser is annealed, and the resistance of the annealed portion of the insulating layer 3 is reduced. Therefore, the cathode line 2
Only the portion of the first insulating layer 3 other than the portion above the first insulating layer 3 can be the resistance region 4 as shown in FIG. The laser is XeC
It is preferable to use an excimer laser (wavelength λ = 308 nm). The laser irradiation time at this time is about 0.1 second. Alternatively, annealing may be performed using a lamp instead of laser. Further, the first insulating layer 3 is formed by low pressure CVD.
It is composed of a film of amorphous silicon or polysilicon formed by a plasma CVD method, a sputter deposition method, an electron beam deposition method, or a resistance heating deposition method.

Incidentally, the resistance of an amorphous silicon film formed by means of a commonly used sputter deposition method or plasma CVD method is about 10 ⁷ to 10 ¹² Ωcm, and since this film has a high resistance value, it is insulated. It can be used as a layer. P, Bi, Ga, In, Tl, or the like can be used as a material of an impurity to be doped into such an insulating layer. When an insulating layer doped with an impurity is annealed with a laser, it depends on laser irradiation conditions. The resistance value of the insulating layer can be adjusted to a resistance value of 10 ¹ to 10 ⁶ Ωcm. Therefore, the portion of the annealed insulating layer can be used as a resistor having a desired resistance value.

The material of the cathode line 2 is as follows.
The material does not change even if the temperature is increased by laser irradiation.
High melting point materials such as b, Ta and W are used. By the way, in the field emission cathode device shown in FIG.
Since a portion between the cathode lines 2 is used as a resistor, a resistance region 4 from the cathode line 2 to the emitter 7 is used.
Can be made longer. Therefore, a large resistance value can be easily obtained, and the resistance value can be easily adjusted.

FIG. 7 is a sectional view of a field emission cathode device according to a third embodiment of the present invention. In this figure, for example, a striped cathode line 2 provided with a rectangular hole 9 is formed by vapor deposition and patterning so as to surround a portion where a cone-shaped emitter 7 is formed on a transparent substrate 1 such as glass. A first insulating layer 3 formed and separated from the cathode lines 2 is formed above the cathode lines 2. The first insulating layer 3 is made of an amorphous silicon or polysilicon film doped with an impurity. The portion of the first insulating layer 3 formed in the hole 9 of the cathode line 2 has a low resistance by annealing as described later. To form the resistance region 4.

Further, a second insulating layer 5 and a gate line 6 are formed on the first insulating layer 3, and a plurality of openings formed in the second insulating layer 5 and the gate line 6 respectively have A cone-shaped emitter 7 is formed. Since the opening is provided only on the resistance region 4, the emitter 7 is also formed only on the resistance region 4. According to this field emission cathode device, only the portion of the first insulating layer 3 located in the hole 9 adjacent to the cathode line 2 is the local resistance region 4, so that the first insulating layer 3 will be described later. 3
The resistive region 4 can be formed locally without highly precise patterning. Further, as shown in the figure, the step on the surface of the field emission cathode device is almost
Can be only the thickness.

FIG. 8 shows the configuration of the striped cathode line 2 of the field emission cathode device shown in FIG. As shown in this figure, a cathode line 2 and a gate line 6 indicated by a dashed line are formed in a matrix, and at a portion where the cathode line 2 and the gate line 6 intersect,
A plurality of holes 9 are formed in the cathode line 2 by patterning. The hole 9 has, for example, a rectangular shape as shown in the figure, and since the cathode line 2 is formed directly on the translucent substrate 1 by vapor deposition or the like, light is irradiated from below the substrate 1. Then, this light is irradiated upward through the hole 9 formed in the cathode line 2. That is, the hole 9 functions as a light transmitting portion.

Next, FIG. 9 shows a top view of the field emission cathode device shown in FIG. In this figure, a cathode line 2 indicated by a dotted line and a gate line 6 indicated by a solid line are formed in a matrix as described above, and an array composed of a plurality of emitters 7 is formed on the resistance region 4 at the intersection of the matrix. Is formed. The cathode line 2 and the gate line 6 are driven by the cathode drive circuit and the gate drive circuit as described with reference to FIG.

Next, means for lowering the resistance by annealing only the portion of the first insulating layer 3 located in the hole 9 formed in the cathode line 2 is shown in FIG. In this figure, substrate 1
A plurality of holes 9 are formed in the cathode line 2 by forming a stripe-shaped cathode line 2 thereon and performing patterning. Further, a first insulating layer 3 doped with impurities is formed thereon. In this state, the first insulating layer 3 is irradiated with, for example, a laser from below the substrate 1 using the cathode line 2 as a photomask. Then, the laser beam passing through the hole 9 formed in the cathode line 2 is
And the temperature of the irradiated portion instantaneously rises. Therefore, the portion of the first insulating layer 3 irradiated with the laser is annealed, and the resistance of the annealed portion is reduced. In this case, the first insulating layer 3 may be previously formed in a stripe shape at a portion where the separation between the cathode lines 2 is necessary as shown in the figure, so that the insulation between the cathode lines 2 may be obtained.

Therefore, only the portion of the first insulating layer 3 located in the hole 9 formed in the cathode line 2 can be the resistance region 4 as shown in FIG. As a laser, a XeCl excimer laser (wavelength λ = 308n)
It is preferred to use m). The laser irradiation time at this time is about 0.1 second. Alternatively, annealing may be performed using a lamp instead of laser. Further, the first insulating layer 3
Is composed of an amorphous silicon or polysilicon film formed by a low pressure CVD method, a plasma CVD method, a sputter deposition method, an electron beam deposition method, or a resistance heating deposition method. The resistance of an amorphous silicon film generally formed by a sputter deposition method or a plasma CVD method is about 10 ⁷ to 10 ¹² Ωcm, and this film can be used as an insulating layer because of its high resistance value. .

P, Bi, Ga, In, Tl, or the like can be used as the material of the impurity to be doped into the insulating layer. When the insulating layer doped with the impurity is annealed with a laser, the laser irradiation is performed. Depending on the conditions, the resistance value of the insulating layer can be adjusted to an arbitrary resistance value of 10 ¹ to 10 ⁶ Ωcm. Therefore, the portion of the annealed insulating layer can be used as a resistor having a desired resistance value. In addition, as a material of the cathode line 2, a high melting point material such as Nb, Ta, W, or the like, whose material does not change even when it is irradiated with a laser and becomes hot, is used.

In the field emission cathode device shown in FIG. 7, since the first insulating layer 3 in the hole 9 formed in the cathode line 2 is used as the resistance region 4, the resistance region from the frame of the hole 9 to the emitter 7 is formed. 4 can be lengthened. Therefore, a large resistance value can be easily obtained, and the resistance value can be easily adjusted. Further, by precisely aligning the cathode line 2 and the gate line 6, the resistance region 4 can be formed at each bottom of each emitter 7.

In the field emission cathode device of the third embodiment, only the portion of the first insulating layer 3 located in the hole 9 formed in the cathode line 2 is annealed to reduce the resistance as follows. Is also good. First, after forming a plurality of holes 9 in the striped cathode lines 2, the first insulating layer 3 is formed on the entire surface of the substrate 1. In this state, the first
A photomask is put on the insulating layer 3 as shown in FIG.
For example, a laser is irradiated from above the photomask. Then, the laser that has passed through the photomask is applied only to the portion of the first insulating layer 3 located at the hole 9 formed in the cathode line 2, and the temperature of this portion instantaneously rises. For this reason,
The first insulating layer 3 irradiated with the laser is locally annealed, and the resistance of the annealed portion decreases.

In this way, only the portion of the first insulating layer 3 located in the hole 9 formed in the cathode line 2 can be made the resistance region 4 as shown in FIG. In this case, the holes 9 formed in the cathode line 2 are used as a photomask.
The through-holes are provided only in the portions corresponding to. As a result, since the portion of the first insulating layer 3 formed between the cathode lines 2 is not annealed, it is not necessary to separate the first insulating layer 3 between the cathode lines 2 as described above. become. Therefore, according to this method, the step on the surface of the field emission cathode device can be made a slight step corresponding to the thickness of the cathode line.

The field emission cathode device of the present invention has been described above. In the field emission cathode devices shown in FIGS. 1, 4 and 7, the resistance value of the resistance region is made uniform by annealing performed for each substrate. A monitor insulating layer is formed simultaneously with the process of forming the first insulating layer on the periphery of the substrate, and annealing is performed while detecting the resistance value of the monitor insulating layer to obtain a desired resistance. If the annealing is completed when the value is obtained from the insulating layer for monitoring, a field emission cathode device having a resistance region having a uniform resistance value can be manufactured.

In general, the field emission cathode device shown in FIGS. 1, 4 and 7 is used in a state sealed in a vacuum vessel or the like. If an anode coated with a fluorescent material is provided, a display device using a field emission cathode element can be obtained.

[0043]

Since the FEC element of the present invention is constructed as described above, a desired portion of the insulating layer can be annealed by, for example, a laser to make it resistant, so that the insulating layer forming the resistance region can be formed with high precision. A local resistance region can be formed between the cathode and the emitter without patterning the resistive pattern. In addition, since the insulating layer is not patterned with high precision, the step on the surface of the FEC element can be reduced to a slight step of the thickness of the cathode line. Further, the resistance value of the resistance layer can be accurately controlled to an arbitrary resistance value depending on the degree of annealing.

[Brief description of the drawings]

FIG. 1 is a sectional view of a first embodiment of a field emission cathode device according to the present invention.

FIG. 2 is a top view of the first embodiment of the field emission cathode device of the present invention.

FIG. 3 is a view showing means for partially annealing in the first embodiment.

FIG. 4 is a sectional view of a second embodiment of the field emission cathode device of the present invention.

FIG. 5 is a top view of a second embodiment of the field emission cathode device of the present invention.

FIG. 6 is a view showing means for partially annealing in the second embodiment.

FIG. 7 is a sectional view of a third embodiment of the field emission cathode device of the present invention.

FIG. 8 is a diagram showing a configuration of a cathode line of a third embodiment of the field emission cathode device of the present invention.

FIG. 9 is a top view of a third embodiment of the field emission cathode device of the present invention.

FIG. 10 is a view showing means for partially annealing in the third embodiment.

FIG. 11 is a perspective view of a conventional field emission cathode device.

FIG. 12 is a cross-sectional view of another conventional field emission cathode.

FIG. 13 is a perspective view of a display device using a conventional field emission cathode.

DESCRIPTION OF SYMBOLS 1, 71, 81 Substrate 2, 82 Cathode line 3 First insulating layer 4 Resistive region 5 Second insulating layer 6, 85 Gate line 7, 76, 86 Emitter 8 Photo mask 9 Hole 72 Cathode 73, 83 Resistance layer 74, 84 Insulating layer 75 Gate 77, 87 Anode 91 Cathode drive circuit 92 Gate drive circuit 93 Anode drive circuit

────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-5-47296 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01J 1/304 H01J 9/02

Claims (7)

(57) [Claims] A plurality of striped cathodes formed on a substrate; a first insulating layer formed on the entire surface of the substrate on which the cathodes are formed; A gate formed through a second insulating layer, a plurality of openings provided in the gate and the second insulating layer, and on a first insulating layer above the cathode. A field emission cathode device comprising: a plurality of cone-shaped emitters formed respectively; and a portion of the first insulating layer on the cathode on which the emitter array is formed, which is made resistive and has a local portion. Typical
A field emission cathode device, wherein an anti-region is formed . 2. A plurality of striped cathodes formed on a substrate; a first insulating layer formed on the entire surface of the substrate on which the cathodes are formed; A gate formed via a second insulating layer, and a plurality of gates formed in a plurality of openings provided in the gate and the second insulating layer and between the cathodes on the first insulating layer. A field emission cathode device comprising: an emitter array formed of a plurality of cone-shaped emitters; wherein only a portion of the first insulating layer where the emitter array is formed is made resistive, and a local resistance region is formed. Formed
Field emission cathode element characterized by being. 3. A plurality of striped cathodes formed on a light-transmitting substrate and provided with a plurality of holes at portions intersecting the gates, and a plurality of striped cathodes formed on at least the cathodes on the substrate surface. 1
An insulating layer, a gate formed on the first insulating layer via a second insulating layer, and a plurality of openings provided in the gate and the second insulating layer, And an emitter array including a plurality of cone-shaped emitters respectively formed on the first insulating layer in the hole formed in the cathode, wherein the first insulating layer includes: A field emission cathode device, wherein only a portion in the hole formed in the cathode on which the emitter array is formed is made resistive to form a local resistance region . 4. After forming the first insulating layer, the first insulating layer is irradiated with a light beam, such as a laser or a lamp, from above the first insulating layer via a photomask. 4. The field emission cathode device according to claim 1, wherein the field emission cathode device is formed. 5. The method according to claim 2, wherein the first insulating layer is made resistive by irradiating a light beam such as a laser or a lamp from the back side of the substrate using the cathode conductor as a photomask. Field emission cathode device. 6. A field emission cathode device according to claim 1, wherein said first insulating layer is made of an amorphous silicon or polysilicon film doped with impurities. 7. The resistance region having a resistance value of 1.times.
The field emission cathode device according to any one of claims ¹ to ^{6, wherein the} density is set to 10 ¹ to 1 × 10 ⁶ Ωcm.