JP3257759B2 - Magnetoresistive material - Google Patents
Magnetoresistive materialInfo
- Publication number
- JP3257759B2 JP3257759B2 JP26596495A JP26596495A JP3257759B2 JP 3257759 B2 JP3257759 B2 JP 3257759B2 JP 26596495 A JP26596495 A JP 26596495A JP 26596495 A JP26596495 A JP 26596495A JP 3257759 B2 JP3257759 B2 JP 3257759B2
- Authority
- JP
- Japan
- Prior art keywords
- ferromagnetic
- antiferromagnetic
- matrix
- magnetoresistive
- particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/0009—Antiferromagnetic materials, i.e. materials exhibiting a Néel transition temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/0036—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity
- H01F1/0045—Zero dimensional, e.g. nanoparticles, soft nanoparticles for medical/biological use
- H01F1/0063—Zero dimensional, e.g. nanoparticles, soft nanoparticles for medical/biological use in a non-magnetic matrix, e.g. granular solids
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biomedical Technology (AREA)
- General Health & Medical Sciences (AREA)
- Molecular Biology (AREA)
- Thin Magnetic Films (AREA)
- Hall/Mr Elements (AREA)
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、磁気ヘッド、特に
再生ヘッド或いは位置センサー、回転センサーなどに用
いられる磁気抵抗効果素子用の磁気抵抗効果材料に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magneto-resistive material for a magneto-resistive element used for a magnetic head, in particular, a reproducing head or a position sensor or a rotation sensor.
【０００２】[0002]
【従来の技術】従来の磁気抵抗（ＭＲ）効果材料として
は、例えば、ＦｅーＮｉ合金薄膜（パーマロイ薄膜）等
が用いられている。パーマロイ薄膜の磁気抵抗変化率は
２〜３％である。今後、磁気ヘッドの狭トラック化や磁
気センサーの高分解能化に対応するためには、より磁気
抵抗変化率（△ＭＲ）の大きい性質の磁気抵抗効果材料
が望まれていた。2. Description of the Related Art As a conventional magnetoresistive (MR) effect material, for example, an Fe—Ni alloy thin film (permalloy thin film) is used. The magnetoresistance ratio of the permalloy thin film is 2-3%. In the future, in order to cope with a narrow track of the magnetic head and a high resolution of the magnetic sensor, a magnetoresistive effect material having a property of a larger magnetoresistance change (ΔMR) has been desired.
【０００３】その後、磁気抵抗効果材料として、図５に
示すように、銅或いは銀等の導電性の非磁性体のマトリ
クス（母相）２中に、コバルト或いは鉄等の金属からな
る強磁性粒５を、粒径数ｎｍ〜数十ｎｍの超微細な微結
晶粒子（ナノクラスター）として析出させて分散させ
た、ＣｏーＣｕ系或いはＦｅーＡｇ系のグラニュラーＧ
ＭＲ材の薄膜について巨大磁気抵抗効果（ＧＭＲ）が観
察された。Thereafter, as a magnetoresistive material, as shown in FIG. 5, a ferromagnetic particle made of a metal such as cobalt or iron is placed in a matrix (mother phase) 2 of a conductive nonmagnetic material such as copper or silver. Co-Cu-based or Fe-Ag-based granular G is deposited and dispersed as ultrafine microcrystalline particles (nanoclusters) having a particle size of several nm to several tens nm.
The giant magnetoresistance effect (GMR) was observed for the thin film of the MR material.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、Ｃｏー
Ｃｕ系或いはＦｅーＡｇ系の従来のグラニュラーＧＭＲ
材料においては、Ｃｏ等の強磁性体の濃度が約２０ａｔ
％（原子％）を越えると、磁気抵抗変化率が減少するこ
とが知られている。この理由は、Ｃｏ等の強磁性粒５が
相互に接触する確率が高くなることにより、反強磁性磁
化配列が得られなくなるためである。強磁性体を高濃度
化することにより、磁気抵抗変化率をさらに飛躍的に増
加させることは、従来実現されていなかった。However, the conventional granular GMR of the Co-Cu type or the Fe-Ag type.
In the material, the concentration of a ferromagnetic material such as Co is about 20 at.
% (Atomic%), it is known that the rate of change in magnetoresistance decreases. This is because an increase in the probability that the ferromagnetic grains 5 of Co or the like come into contact with each other makes it impossible to obtain an antiferromagnetic magnetization arrangement. Conventionally, it has not been possible to further increase the magnetoresistance change rate by increasing the concentration of the ferromagnetic material.
【０００５】本発明は前記事情に鑑みてなされたもの
で、強磁性体を高濃度化することにより、磁気抵抗変化
率を飛躍的に増加させた磁気抵抗効果材料を提供するこ
とを課題とする。The present invention has been made in view of the above circumstances, and it is an object of the present invention to provide a magnetoresistance effect material in which the rate of change in magnetoresistance is dramatically increased by increasing the concentration of a ferromagnetic material. .
【０００６】[0006]
【課題を解決するための手段】本発明の磁気抵抗効果材
料は、導電性の非磁性体をマトリクスとし、該マトリク
ス中に、鉄（Ｆｅ）、コバルト（Ｃｏ）、ニッケル（Ｎ
ｉ）のうちの少なくとも１種の金属元素を含む強磁性体
からなるナノクラスターを少なくとも分散してなる磁気
抵抗効果材料に、更に、反強磁性体からなるナノクラス
ターを分散してなることを特徴とする。The magnetoresistive material of the present invention comprises a conductive non-magnetic material as a matrix, in which iron (Fe), cobalt (Co), nickel (N
i) a magnetoresistance effect material in which at least a nanocluster made of a ferromagnetic material containing at least one metal element is dispersed, and a nanocluster made of an antiferromagnetic material further dispersed. And
【０００７】[0007]
【発明の実施の形態】図１は本発明の磁気抵抗効果材料
の一実施形態の組織状態を示す模式図である。図１に示
すように、本発明の磁気抵抗効果材料は、導電性の非磁
性体からなるマトリクス２中に、Ｆｅ、Ｃｏ、Ｎｉのう
ちの少なくとも１種の金属元素を含む強磁性体からなる
強磁性粒５をナノクラスターとして分散してなる磁気抵
抗効果材料に、更に、反強磁性体からなる反強磁性粒８
をナノクラスターとして分散してなるものである。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a schematic view showing the structure of an embodiment of the magnetoresistive material of the present invention. As shown in FIG. 1, the magnetoresistive material of the present invention is made of a ferromagnetic material containing at least one metal element of Fe, Co, and Ni in a matrix 2 made of a conductive nonmagnetic material. The magneto-resistance effect material in which the ferromagnetic particles 5 are dispersed as nanoclusters is further provided with an antiferromagnetic particle 8 made of an antiferromagnetic material.
Are dispersed as nanoclusters.
【０００８】強磁性体としては、Ｃｏ、Ｆｅ、Ｎｉのう
ちの少なくとも１種の金属元素を含む金属或いはこれら
の金属元素を含む合金で強磁性を示すものが挙げられ
る。本発明の磁気抵抗効果材料においては、反強磁性粒
８がナノクラスターとして導電性の非磁性体のマトリク
ス２中に存在するので、強磁性体の体積分率を２０〜６
０％と高くすることができ、巨大磁気抵抗効果を発揮さ
せ、また外部磁界に対する抵抗変化の感度を高めること
ができる。The ferromagnetic material includes a metal containing at least one metal element of Co, Fe, and Ni, or an alloy containing these metal elements, which exhibits ferromagnetism. In the magnetoresistive material of the present invention, since the antiferromagnetic particles 8 are present as nanoclusters in the conductive nonmagnetic matrix 2, the volume fraction of the ferromagnetic material is 20 to 6%.
It can be as high as 0%, exhibit a giant magnetoresistance effect, and can increase the sensitivity of resistance change to an external magnetic field.
【０００９】前記体積分率が６０％を超えると、強磁性
体が多すぎて、強磁性粒５同士が接触し易くなる。２０
％未満だと磁気抵抗効果が低くなりやすい。従って、強
磁性体の、好ましい体積分率は２０〜６０％である。強
磁性体は、粒径１０Å〜１００Åの超微細な微結晶粒子
（ナノクラスター）としてマトリクス２中に分散せしめ
て、強磁性粒５を形成させる。If the volume fraction exceeds 60%, the ferromagnetic material is too large, and the ferromagnetic grains 5 are likely to come into contact with each other. 20
%, The magnetoresistance effect tends to be low. Therefore, the preferable volume fraction of the ferromagnetic material is 20 to 60%. The ferromagnetic material is dispersed in the matrix 2 as ultrafine microcrystalline particles (nanoclusters) having a particle size of 10 ° to 100 ° to form ferromagnetic particles 5.
【００１０】反強磁性体としては、ＦｅＭｎ、ＮｉＭｎ
若しくはＰｔＭｎ等のマンガン（Ｍｎ）合金、Ｍｎ、Ｎ
ｉＯ、αーＦｅ2Ｏ3、ＡｌＣｒ、ＣｒＯ等の反強磁性体
が挙げられる。反強磁性体は、粒径５〜５０Å、好まし
くは１０Å程度のナノクラスターとしてマトリクス２中
に相分離により分散せしめて、反強磁性粒８を形成させ
る。また、反強磁性粒８の粒径は、強磁性粒５の粒径よ
くも小さい方が好ましい。反強磁性体の、好ましい体積
分率は１〜２０％である。As the antiferromagnetic material, FeMn, NiMn
Or a manganese (Mn) alloy such as PtMn, Mn, N
Antiferromagnetic substances such as iO, α-Fe 2 O 3 , AlCr, and CrO are exemplified. The antiferromagnetic material is dispersed as nanoclusters having a particle size of 5 to 50 °, preferably about 10 ° in the matrix 2 by phase separation to form antiferromagnetic particles 8. It is preferable that the particle diameter of the antiferromagnetic particles 8 be smaller or larger than that of the ferromagnetic particles 5. The preferred volume fraction of the antiferromagnetic material is 1 to 20%.
【００１１】導電性の非磁性体としては、銅（Ｃｕ）、
銀（Ａｇ）、金（Ａｕ）、ルテニウム（Ｒｕ）、チタン
（Ｔｉ）、アルミニウム（Ａｌ）、クロム（Ｃｒ）等の
非磁性金属或いはこれらの非磁性金属を含む、導電性の
合金等であって非磁性のものが挙げられる。導電性の非
磁性体は、微細な強磁性粒５と反強磁性粒８とを取り囲
んでマトリクス２を形成する。As the conductive non-magnetic material, copper (Cu),
Non-magnetic metals such as silver (Ag), gold (Au), ruthenium (Ru), titanium (Ti), aluminum (Al) and chromium (Cr), or conductive alloys containing these non-magnetic metals. And non-magnetic ones. The conductive non-magnetic material forms the matrix 2 surrounding the fine ferromagnetic grains 5 and the antiferromagnetic grains 8.
【００１２】導電性の非磁性体のマトリクス２中に、Ｃ
ｏ等の強磁性体のみをその濃度が約２０％以上になるよ
うに存在させると、強磁性粒５はいずれは接触してしま
う虞がある。しかしながら、反強磁性粒８をナノクラス
ターとして、マトリクス２中に共存させると、強磁性粒
５同士が近接し過ぎて、強磁性的に交換結合してしまう
距離になっても、強磁性粒５に接する反強磁性粒８中の
反強磁性体との交換結合により、確率的に強磁性的に交
換結合する割合が減少し、その分、強磁性体の濃度を高
めることができる。反強磁性体を高濃度に存在させ、そ
の粒径を大にすることは好ましくないため、反強磁性体
はナノクラスターとして、導電性の非磁性体のマトリク
ス２中に均一に分散させる。In a matrix 2 of a conductive nonmagnetic material, C
If only a ferromagnetic material such as o is present at a concentration of about 20% or more, the ferromagnetic particles 5 may eventually come into contact. However, if the antiferromagnetic particles 8 coexist in the matrix 2 as nanoclusters, even if the ferromagnetic particles 5 are too close to each other and ferromagnetically exchange-coupled, the ferromagnetic particles 5 Due to the exchange coupling with the antiferromagnetic material in the antiferromagnetic particles 8 in contact with the ferromagnetic particles 8, the ratio of the ferromagnetic exchange coupling stochastically decreases, and the concentration of the ferromagnetic material can be increased accordingly. Since it is not preferable to make the antiferromagnetic substance exist at a high concentration and increase its particle size, the antiferromagnetic substance is uniformly dispersed in the conductive nonmagnetic matrix 2 as nanoclusters.
【００１３】本発明の磁気抵抗効果材料は、汎用の技
術、例えば、スパッタや蒸着などの薄膜形成装置を用い
て、非晶質の多層膜を作製し、次いでアニール処理によ
り、強磁性体及び反強磁性体を微結晶化することにより
製造できる。則ち、まず、スパッタ等の装置を用い、ガ
ラス板或いはＳｉ等の基板上に、数１０Å（オングスト
ローム）程度に、図２に示すようにバッファ層１１、非
磁性層１２、強磁性層１５、反強磁性層１８を重ねて設
けた多層膜を作製する。The magnetoresistive material of the present invention uses a general-purpose technique, for example, a thin film forming apparatus such as sputtering or vapor deposition to form an amorphous multilayer film, and then anneals the ferromagnetic material and the antiferromagnetic material. It can be manufactured by microcrystallizing a ferromagnetic material. That is, first, using a device such as sputtering, a buffer layer 11, a nonmagnetic layer 12, a ferromagnetic layer 15, as shown in FIG. A multilayer film in which the antiferromagnetic layers 18 are provided is manufactured.
【００１４】強磁性層の膜厚は、１０Å〜１００Å（１
〜１０ｎｍ）が好ましい。薄すぎると、常磁性体にな
り、１００Åより厚いと、強磁性体をナノクラスターと
して分散しにくい。反強磁性層の膜厚は、５Å〜５０Å
とすることが好ましい。次いで、前記多層膜を、２００
〜６００゜Ｃでアニール処理を真空中、或いは微量に酸
素を含んだ雰囲気中で施して、マトリクス２中に、強磁
性体及び反強磁性体をナノクラスターとして分散せしめ
て、磁気抵抗効果膜を得ることができる。The thickness of the ferromagnetic layer is from 10 ° to 100 ° (1
To 10 nm). If it is too thin, it becomes paramagnetic, and if it is thicker than 100 °, it is difficult to disperse the ferromagnetic material as nanoclusters. The thickness of the antiferromagnetic layer is 5 to 50
It is preferable that Next, the multilayer film is coated with 200
Annealing treatment is performed in a vacuum or an atmosphere containing a slight amount of oxygen at ~ 600 ° C. to disperse the ferromagnetic material and the antiferromagnetic material as nanoclusters in the matrix 2, thereby forming a magnetoresistive film. Obtainable.
【００１５】磁気抵抗効果材料の好ましい構成（強磁性
体ー導電性の非磁性体ー反強磁性体）は、ＣｏーＣｕー
ＮｉＭｎ、ＦｅーＡｇーＮｉＭｎ、ＣｏーＡｇーＮｉＭ
ｎ、ＦｅーＡｇーＮｉＭｎ、ＣｏーＡｇーＰｔＭｎ等で
ある。Preferred constitutions of the magnetoresistive material (ferromagnetic material-conductive nonmagnetic material-antiferromagnetic material) are Co-Cu-NiMn, Fe-Ag-NiMn, Co-Ag-NiMn.
n, Fe-Ag-NiMn, Co-Ag-PtMn and the like.
【００１６】図４に、ＣｏーＡｇ系及びＣｏーＡｇーＮ
ｉＭｎ系の磁気抵抗効果膜についての磁気抵抗変化率
の、Ｃｏ濃度依存性を示す。但し、ＣｏーＡｇーＮｉＭ
ｎ系のＮｉＭｎ濃度は一定で、体積分率で１０％であ
る。図４から明らかな通り、ＣｏーＡｇ系では、Ｃｏの
体積分率が２０％で抵抗変化率が１２％であるのに対し
て、ＣｏーＡｇーＮｉＭｎ系では、Ｃｏの体積分率が５
０％で、磁気抵抗変化率は２０％の極大値を示した。則
ち、前記いずれの材料も巨大磁気抵抗効果を示すことが
分かる。FIG. 4 shows Co-Ag system and Co-Ag-N
4 shows the Co concentration dependence of the magnetoresistance ratio of an iMn-based magnetoresistance effect film. However, Co-Ag-NiM
The n-type NiMn concentration is constant and 10% by volume. As is clear from FIG. 4, the Co—Ag system has a Co volume fraction of 20% and a resistance change rate of 12%, whereas the Co—Ag—NiMn system has a Co volume fraction of 5%.
At 0%, the magnetoresistance change showed a maximum value of 20%. That is, it is understood that any of the above-mentioned materials exhibits a giant magnetoresistance effect.
【００１７】[0017]
【実施例】以下本発明を実施例によりさらに詳しく説明
する。図２は本発明の磁気抵抗効果材料である磁気抵抗
効果膜の製造のために用いる多層膜の一例の断面図であ
る。ＲＦーマグネトロンスパッタの装置を用い、次のよ
うにしてガラス基板１０上に多層薄膜を作製した。The present invention will be described in more detail with reference to the following examples. FIG. 2 is a cross-sectional view of an example of a multilayer film used for manufacturing a magnetoresistive film which is a magnetoresistive material of the present invention. Using an RF-magnetron sputtering apparatus, a multilayer thin film was formed on the glass substrate 10 as follows.
【００１８】基板１０上に、初期バッファ層１１とし
て、Ａｇを厚み２０Åに成膜した。Ａｇ層１１は連続膜
を形成しにくく凹凸が多い。前記バッファ層１１の上に
非磁性層１２としてＣｕあるいはＡｇを厚み１５Åに成
膜し、次いで非磁性層１２の上に、強磁性層１５として
Ｃｏを厚み２０Åに、更に非磁性層１２として Ｃｕあ
るいはＡｇを厚み１５Åに、反強磁性層１８としてＮｉ
Ｍｎを厚み５Åに、順次に成膜して５層の薄膜とした。Ag was deposited on the substrate 10 as the initial buffer layer 11 to a thickness of 20 °. The Ag layer 11 is difficult to form a continuous film and has many irregularities. On the buffer layer 11, a film of Cu or Ag is formed to a thickness of 15 ° as the nonmagnetic layer 12, and then, on the nonmagnetic layer 12, Co is formed to a thickness of 20 ° as the ferromagnetic layer 15. Alternatively, Ag is formed to a thickness of 15 °
Mn was sequentially formed to a thickness of 5 ° to form a five-layer thin film.
【００１９】更にこの順序で成膜を繰り返して、非磁性
層１２、強磁性層１５、非磁性層１２及び反強磁性層１
８からなる４層の薄膜をさらに９回重ねて設けることに
より、図２に示す多層薄膜を得た。この膜構成は次の通
りであった。 基板／Ａｇ（２０Å）／［Ｃｕ又はＡｇ（１５Å）／Ｃ
ｏ（２０Å）／ Ｃｕ又はＡｇ（１５Å）／ＮｉＭｎ
（５Å）］n 但しｎは１０である。Further, the film formation is repeated in this order, and the nonmagnetic layer 12, the ferromagnetic layer 15, the nonmagnetic layer 12, and the antiferromagnetic layer 1 are formed.
The four-layered thin film of No. 8 was further superimposed nine times to obtain a multilayer thin film shown in FIG. The film configuration was as follows. Substrate / Ag (20 °) / [Cu or Ag (15 °) / C
o (20 °) / Cu or Ag (15 °) / NiMn
(5Å)] n where n is 10.
【００２０】次いで、前記多層薄膜を、５００゜Ｃでア
ニール処理し、図３に示す構造の磁気抵抗効果膜を得
た。該磁気抵抗効果膜は、基板１０上に、銀層１１を有
し、該銀層１１の上に、銅あるいはＡｇをマトリクス２
とし、該マトリクス２中に、Ｃｏからなる強磁性粒５
と、ＮｉＭｎからなる反強磁性粒８とが、ナノクラスタ
ーとして分散された、グラニュラー構造の磁気抵抗効果
材料であった。ＣｕあるいはＡｇからなるマトリクス２
中に分散された、Ｃｏからなる強磁性粒５の粒径は２０
Å、ＮｉＭｎからなる反強磁性粒８の粒径は１０Åであ
った。Next, the multilayer thin film was annealed at 500 ° C. to obtain a magnetoresistive film having a structure shown in FIG. The magnetoresistive film has a silver layer 11 on a substrate 10 and a copper or Ag matrix 2 on the silver layer 11.
In the matrix 2, ferromagnetic grains 5 made of Co
And the antiferromagnetic particles 8 made of NiMn were dispersed as nanoclusters, and were a magnetoresistive material having a granular structure. Matrix 2 made of Cu or Ag
The particle size of the ferromagnetic grains 5 of Co dispersed in
And the particle diameter of the antiferromagnetic particles 8 made of NiMn was 10 °.
【００２１】膜全体としては、Ｃｏ３６％ーＣｕあるい
はＡｇ５５％ーＮｉＭｎ９％（但し、％は体積分率）の
構成の合金膜となるが、外部磁界、ー１０ｋＯｅから＋
１０ｋＯｅ（キロエルステット゛）の測定条件で２０％
という大きな磁気抵抗変化率を示した。The entire film is an alloy film having a composition of Co 36% -Cu or Ag 55% -NiMn 9% (where% is a volume fraction), but the external magnetic field, from -10 kOe to +
20% under measurement conditions of 10 kOe (kiloersted)
Large magnetoresistance change rate.
【００２２】反強磁性粒８を存在させずに、Ｃｏのみを
その体積分率が２０％以上となるように存在させると、
Ｃｏの強磁性粒５が接触してしまう虞があった。しかし
ながら、ＮｉＭｎの反強磁性粒８をナノクラスターとし
て、マトリクス２中に共存させたので、強磁性粒５同士
が近接しすぎて、強磁性的に交換結合してしまう距離に
なっても、強磁性粒５に接する、反強磁性体（ＮｉＭ
ｎ）との交換結合により、確率的に強磁性的に交換結合
する割合が確率的に減少し、その分、Ｃｏの濃度を、３
６％と高めることができた。反強磁性体であるＮｉＭｎ
を高濃度に存在させ、反強磁性粒８の粒径を大にするこ
とは好ましくない。従って、ＮｉＭｎは、ナノクラスタ
ーとして、銅からなるマトリクス２中に均一に析出させ
て分散した。When only Co is present without the antiferromagnetic grains 8 so that its volume fraction becomes 20% or more,
There was a possibility that the ferromagnetic grains 5 of Co would come into contact. However, since the antiferromagnetic particles 8 of NiMn coexist in the matrix 2 as nanoclusters, even if the ferromagnetic particles 5 are too close to each other and become ferromagnetically exchange-coupled to each other, strong An antiferromagnetic material (NiM) in contact with the magnetic grains 5
n), the ratio of stochastically ferromagnetic exchange coupling is stochastically reduced, and the Co concentration is accordingly reduced to 3%.
It was increased to 6%. NiMn is an antiferromagnetic material
It is not preferable to make the antiferromagnetic particles 8 have a large particle diameter by increasing the concentration thereof. Therefore, NiMn was uniformly precipitated and dispersed as a nanocluster in the matrix 2 made of copper.
【００２３】[0023]
【発明の効果】以上説明したように本発明の磁気抵抗効
果材料は、強磁性粒に加えて反強磁性粒を少なくとも含
み、且つ該反強磁性粒は微細な結晶粒子であるナノクラ
スターとして、導電性の非磁性体マトリクス中に分散さ
れている。従って、強磁性体の体積分率を２０〜６０％
と高くすることができ、大きな磁気抵抗効果を発揮し、
また外部磁界に対する抵抗変化の感度に優れている。As described above, the magnetoresistance effect material of the present invention contains at least antiferromagnetic grains in addition to ferromagnetic grains, and the antiferromagnetic grains are formed as nanoclusters, which are fine crystal grains. It is dispersed in a conductive non-magnetic matrix. Therefore, the volume fraction of the ferromagnetic material is set to 20 to 60%.
And a high magnetoresistance effect,
Also, it is excellent in sensitivity of resistance change to an external magnetic field.
【図１】本発明の磁気抵抗効果材料の一例の組織状態を
示す模式図である。FIG. 1 is a schematic view showing the structure of an example of the magnetoresistive material of the present invention.
【図２】本発明の磁気抵抗効果材料の製造に用いる多層
膜の断面図である。FIG. 2 is a sectional view of a multilayer film used for manufacturing the magnetoresistive material of the present invention.
【図３】磁気抵抗効果膜の組織状態を示す模式図であ
る。FIG. 3 is a schematic diagram showing a structure state of a magnetoresistive film.
【図４】強磁性体の体積分率と磁気抵抗変化率の関係を
示すグラフである。FIG. 4 is a graph showing a relationship between a volume fraction of a ferromagnetic material and a rate of change in magnetoresistance.
【図５】従来例の磁気抵抗効果材料の組織状態を示す模
式図である。FIG. 5 is a schematic diagram showing the structure of a conventional magnetoresistive material.
２ マトリクス ５ 強磁性粒 ８ 反強磁性粒 １０ 基板 １１ バッファ層 １２ 非磁性層 １５ 強磁性層 １８ 反強磁性層 2 Matrix 5 Ferromagnetic particles 8 Antiferromagnetic particles 10 Substrate 11 Buffer layer 12 Nonmagnetic layer 15 Ferromagnetic layer 18 Antiferromagnetic layer
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平６−97534（ＪＰ，Ａ) 特開 平７−312448（ＪＰ，Ａ) 特開 平９−63823（ＪＰ，Ａ) 特開 平９−111418（ＪＰ，Ａ) 特開 平８−225871（ＪＰ，Ａ) Ａｐｐｌｉｅｄ Ｐｈｙｓｉｃｓ Ｌ ｅｔｔｅｒｓ，1992年10月12日，Ｖｏ ｌ．61，Ｎｏ．15，ｐｐ．1855−1857 Ｐｈｙｓｉｃａｌ Ｒｅｖｉｅｗ Ｌ ｅｔｔｅｒｓ，1992年６月22日，Ｖｏ ｌ．68，Ｎｏ．25，ｐｐ．3745−3748 Ｐｈｙｓｉｃａｌ Ｒｅｖｉｅｗ Ｌ ｅｔｔｅｒｓ，1992年６月22日，Ｖｏ ｌ．68，Ｎｏ．25，ｐｐ．3749−3752 (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 43/08 H01F 10/08 H01L 43/10 ＪＩＣＳＴファイル（ＪＯＩＳ)──────────────────────────────────────────────────続 き Continuation of front page (56) References JP-A-6-97534 (JP, A) JP-A-7-312448 (JP, A) JP-A-9-63823 (JP, A) JP-A 9-96 111418 (JP, A) JP-A-8-225871 (JP, A) Applied Physics Letters, October 12, 1992, Vol. 61, No. 15, pp. 1855-1857 Physical Review Letters, June 22, 1992, Vol. 68, no. 25, pp. 3745-3748 Physical Review Letters, June 22, 1992, Vol. 68, no. 25, pp. 3749−3752 (58) Fields investigated (Int. Cl. 7 , DB name) H01L 43/08 H01F 10/08 H01L 43/10 JICST file (JOIS)
Claims (1)
マトリクス中に、Ｆｅ、Ｃｏ、Ｎｉのうちの少なくとも
１種の金属元素を含む強磁性体からなるナノクラスター
を少なくとも分散してなる磁気抵抗効果材料に、更に、
反強磁性体からなるナノクラスターを分散してなる磁気
抵抗効果材料。1. A magnetic material comprising a conductive nonmagnetic material as a matrix, and at least nanoclusters made of a ferromagnetic material containing at least one metal element of Fe, Co, and Ni dispersed in the matrix. In addition to the resistance effect material,
A magnetoresistive material made of dispersed antiferromagnetic nanoclusters.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26596495A JP3257759B2 (en) | 1995-10-13 | 1995-10-13 | Magnetoresistive material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26596495A JP3257759B2 (en) | 1995-10-13 | 1995-10-13 | Magnetoresistive material |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09116208A JPH09116208A (en) | 1997-05-02 |
| JP3257759B2 true JP3257759B2 (en) | 2002-02-18 |
Family
ID=17424504
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26596495A Expired - Fee Related JP3257759B2 (en) | 1995-10-13 | 1995-10-13 | Magnetoresistive material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3257759B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19908054C2 (en) * | 1999-02-25 | 2001-06-28 | Forschungszentrum Juelich Gmbh | Uncoupled GMR sensor |
-
1995
- 1995-10-13 JP JP26596495A patent/JP3257759B2/en not_active Expired - Fee Related
Non-Patent Citations (3)
| Title |
|---|
| Ａｐｐｌｉｅｄ Ｐｈｙｓｉｃｓ Ｌｅｔｔｅｒｓ，１９９２年１０月１２日，Ｖｏｌ．６１，Ｎｏ．１５，ｐｐ．１８５５−１８５７ |
| Ｐｈｙｓｉｃａｌ Ｒｅｖｉｅｗ Ｌｅｔｔｅｒｓ，１９９２年６月２２日，Ｖｏｌ．６８，Ｎｏ．２５，ｐｐ．３７４５−３７４８ |
| Ｐｈｙｓｉｃａｌ Ｒｅｖｉｅｗ Ｌｅｔｔｅｒｓ，１９９２年６月２２日，Ｖｏｌ．６８，Ｎｏ．２５，ｐｐ．３７４９−３７５２ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH09116208A (en) | 1997-05-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6770382B1 (en) | GMR configuration with enhanced spin filtering | |
| JP2690623B2 (en) | Magnetoresistance effect element | |
| JP2778626B2 (en) | Magnetoresistance effect film, method of manufacturing the same, and magnetoresistance effect element | |
| KR100288466B1 (en) | Magnetoresistive element, magnetoresistive head, memory element and amplification element using the same | |
| US6341053B1 (en) | Magnetic tunnel junction elements and their fabrication method | |
| JP3033934B2 (en) | Spin valve magnetoresistive element and related devices | |
| US7265948B2 (en) | Magnetoresistive element with oxide magnetic layers and metal magnetic films deposited thereon | |
| US5476680A (en) | Method for manufacturing granular multilayer mangetoresistive sensor | |
| JP3184352B2 (en) | Memory element | |
| JPH0660336A (en) | Magnetoresistance sensor based on spin valve effect and system utilizing magnetoresistance sensor thereof | |
| JPH0821166B2 (en) | Magnetoresistive sensor | |
| GB2422712A (en) | CPP giant magnetoresistive element | |
| JPH09199325A (en) | Multilayered structure, sensor and its manufacture | |
| JP3231313B2 (en) | Magnetic head | |
| JPH0758375A (en) | Granular reluctance film and forming method thereof | |
| JPH11259820A (en) | Magnetoresistive effect film and magnetoresistive effect head | |
| JP3497573B2 (en) | Exchange coupling film and magnetoresistive element | |
| JP3323098B2 (en) | Magnetoresistance effect multilayer film | |
| JPH06314617A (en) | Exchange connection film and magnetoresistance effect element | |
| JP3257759B2 (en) | Magnetoresistive material | |
| JP3393963B2 (en) | Exchange coupling film and magnetoresistive element | |
| JP3321615B2 (en) | Magnetoresistive element and magnetic transducer | |
| JP2830513B2 (en) | Magnetoresistive material and method of manufacturing the same | |
| US20020101689A1 (en) | High sensitivity spin valve stacks using oxygen in spacer layer deposition | |
| JP2002314171A (en) | Layer to be fixed, forming method therefor, spin valve structure and forming method therefor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20011120 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20071207 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081207 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091207 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091207 Year of fee payment: 8 |
|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091207 Year of fee payment: 8 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| LAPS | Cancellation because of no payment of annual fees |