JP3255051B2 - Optical information recording medium - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to an optical disk capable of high-density recording using a rewritable phase change medium. More specifically, the present invention relates to a phase change medium in which a groove signal is limited so as to be compatible with a CD format while having a low reflectance, a high contrast is obtained, and the deterioration is small with respect to rewriting of data many times.

[0002]

2. Description of the Related Art In recent years, as the amount of information has increased, there has been a demand for a recording medium capable of recording and reproducing a large amount of data at a high density and at a high speed. . Optical discs include a write-once type, which allows recording only once, and a rewritable type, which allows recording and erasing any number of times.

Examples of the rewritable optical disk include a magneto-optical recording medium utilizing a magneto-optical effect and a phase change medium utilizing a change in reflectivity accompanying a reversible change in crystalline state. The phase change medium does not require an external magnetic field, and has the advantage that recording and erasing can be performed only by modulating the power of laser light, and the recording and reproducing apparatus can be downsized. Further, there is an advantage that it is possible to use a short wavelength light source to increase the recording density from a medium that can be recorded and erased at a wavelength of about 800 nm, which is currently mainstream, without changing the material of the recording layer and the like.

As such a phase change type recording layer material, a chalcogen-based alloy thin film is often used. For example, GeSbTe system, InSbTe system, GeSnTe
And AgInSbTe-based alloys. Currently, rewritable phase-change recording media that have been put into practical use
The erased state is changed to a crystalline state, and an amorphous bit is formed.

[0005] The amorphous bit is formed by heating the recording layer to a temperature higher than the melting point and rapidly cooling it. In order to prevent the recording layer from evaporating and deforming due to such a heat treatment, the recording layer is usually sandwiched above and below with a heat-resistant and chemically stable dielectric protective film. In the recording process, the protective layer promotes thermal diffusion from the recording layer, realizes a supercooled state, and contributes to the formation of amorphous bits.

[0006] Further, by adopting a four-layer structure in which a metal reflection layer is provided on the sandwich structure, heat diffusion is further promoted, and an amorphous bit is usually formed stably. Erasing (crystallization) is performed by heating the recording layer to a temperature higher than the crystallization temperature of the recording layer and lower than the melting point.

In this case, the dielectric protection layer functions as a heat storage layer for keeping the recording layer at a high temperature sufficient for solid-phase crystallization. In a phase change medium capable of so-called one-beam overwriting, the above-described erasing and re-recording processes can be performed only by the intensity modulation of one focused light beam (Jpn.
J. Appl. Phys. , 26 (1987), su
ppl. 26-4, p. 61-66).

In the phase change medium capable of one-beam overwriting, the layer structure of the recording medium and the circuit structure of the drive are simplified. For this reason, it is attracting attention as an inexpensive and high-density large-capacity recording system. In recent years, rewritable compact discs (CD-Erasable, CD-E) have been proposed ("CD-ROM professionala").
l, USA, September 1996, pp. 29-44, or Phase Change Optical Recording Symposium Proceedings, 19
1995, pp. 41-45).

In the CD-E, although it is difficult to be compatible with a CD including a high reflectance of 70% or more, 15-
Within the range of 25%, compatibility with CDs in terms of recording signals and groove signals can be ensured. At least, if an amplification system for covering the low reflectance is added to the reproduction system, the current C
Compatibility can be ensured in the category of D drive technology. FIG. 1 shows a schematic diagram of this. In the case of CD-E, a groove 2 is provided on a substrate 1 and recording in the groove is performed. It is considered that the groove 2 uses a meander including address information (particularly). Kaihei 5-210
No. 849).

The meander is frequency (FM) modulated at a carrier frequency of 22.05 kHz and its amplitude (Wobble)
Amplitude) is very small, about 30 nm, compared to the groove pitch of 1.6 μm. This meandering is called a wobble, and the meandering is frequency-modulated, and a signal incorporating address information of a specific position of a certain track is converted into an ATIP signal (Absolute Time In).
Pre-groove, a recordable write-once disc (CD-Recordable, CD-
R) ("CD Family", co-authored by Heitaro Nakajima, Takao Ibashi, Hiroshi Ogawa, Ohmsha (1992)
6), Chapter 4).

[0011]

In the recording process of the phase change medium, an extreme thermal cycle occurs in which the recording layer is melted and rapidly cooled to a melting point or less within several tens of nanoseconds. Even though it is covered with a dielectric protection layer, microdeformation and segregation accumulate over thousands to tens of thousands of repeated overwrites, and finally, optically recognizable noise rise, This leads to the generation of local defects on the order of microns (J. Appl. Phys., 78 (19)
95), pp 6980-6988).

Although significant improvements have been made by devising the material of the recording layer, the protective layer, and the layer configuration, there is essentially an upper limit to the number of rewritable times. One order of magnitude less than media.
In the low-reflectance CD-E medium described above, the recording condition is CD
Since the linear velocity is at most 6 times the linear velocity and the mark length modulation recording is performed, the direction is more severe from the viewpoint of repetitive overwrite durability.

In addition, according to the study of the present inventors, CDs
It has been found that the groove shape for ensuring the compatibility of the groove signal with the drive tends to reduce the repeated overwrite durability of the phase change medium. In other words, when recording is performed in a groove in a range of a groove shape (depth 20 to 100 nm, width 0.2 to 0.8 μm) that does not hinder tracking servo (push-pull and three-beam methods) with focused light having a wavelength of 780 nm. In order to make the push-pull signal after recording equal to the ROM standard (around 0.04 to 0.09) in order to obtain compatibility with the CD-ROM, the groove depth is less than 60 nm and the width is less. It is limited to the range of 0.3 to 0.6 μm (Japanese Patent Application Laid-Open No. H8-212550, but this patent does not take into account any repeated overwrite durability).

This relationship is a parameter that hardly depends on the layer structure of the phase change medium and is determined substantially only by the groove shape. On the other hand, the narrower and deeper the groove width, the better the repetitive overwrite durability. According to the study by the present inventors, it has been found that the repetitive overwrite durability rapidly deteriorates when the groove depth becomes shallower than 50 nm.

Therefore, in order to achieve compatibility between the conventional CD and the groove signal, it is necessary to sacrifice the overwrite durability to some extent, but the sacrifice should be minimized. On the other hand, in addition to the limitation caused by the groove signal, in the CD-E medium using the phase change medium, a new deterioration phenomenon that a wobble signal leaks into a recording signal due to repeated overwriting has been found.

If the groove is narrowed in order to eliminate the overwrite durability due to the shallow groove, the end of the recording light beam thermally damages the groove wall, so that the deterioration of the signal derived from the wobble signal is promoted. It is thought that. Further, the groove bottom is also deformed by the heat generated in the recording layer. The lower protective layer is
Since it has a function of suppressing the temperature rise on the substrate surface by the thermal insulation effect and mechanically suppressing the deformation of the substrate, a ZnS: SiO 2 mixed film or the like is widely used due to its heat conduction and mechanical properties.

According to the studies made by the present inventors, both the overwrite durability and the productivity were both reduced due to the optical requirements for compatibility with the CD standard and the restrictions imposed on the thickness of the lower protective layer. It turned out to be extremely difficult to satisfy. Due to the additional conditions imposed for ensuring compatibility with the CD standard as described above, the number of repeatable times is further reduced by one digit or more, to about several thousand times.

The wobble is an indispensable technique for adding necessary address information for detecting an unrecorded area where information is to be recorded even in a rewritable CD. A method of using a rewritable CD medium to record and rewrite data in sector units, such as a magneto-optical disk, has not been established yet, but in that case, the number of rewrites to a specific sector must exceed 1,000. Is considered sufficiently, and the problem of deterioration due to the overwriting becomes more serious.

Improving the durability of repeated overwriting while maintaining compatibility with the current CD drive as much as possible has been an urgent issue in order to realize a highly reliable CD-E.

[0020]

That is, the gist of the present invention is that a lower protective layer, a phase-change type recording layer, a lower protective layer, a track pitch of 1.6 ± 0.1 μm and a meandering guide groove are provided on a substrate.
An upper protective layer and a reflective layer are provided in this order, a crystal state having a reflectance of 15% or more and 25% or less is set to an unrecorded state, and a reflectance of
% Of the amorphous state as a recording state, and modulating the light intensity into two or more values by using focused light having a wavelength of 780 ± 30 nm from the surface of the substrate opposite to the recording layer in the guide groove to thereby form an amorphous state. in the optical information recording medium for recording, reproducing, and erasing of the mark, the recording layer _{M w (Sb z Te 1-} z) 1-w (0 ≦ w <0.
3, 0.5 <z <0.9, M is In, Ga, Zn, G
e, Sn, Si, Cu, Au, Ag, Pd, Pt, P
b, Cr, Co, O, S, Se)
Alloy thin film having a thickness of 15 nm or more and 30 nm or less, and a lower protective layer having a thickness of 70 nm or more and 150 nm or less.
Less than 0, and more than 0 nm and less than 30 nm thicker than the film thickness at which the reflectivity of the crystalline state becomes a minimum value, and the depth of the guide groove is 25 nm or more and 45 nm or less, and the width is 0.4 μm or more and 0.6 μm or less It is another object of the present invention to provide an optical information recording medium.

Alternatively, the track pitch is 1.6 ± 0.
1 μm, a first lower protective layer, a second lower protective layer, a phase change recording layer, an upper protective layer, on a substrate provided with meandering guide grooves;
A reflective layer is provided in this order, a crystalline state having a reflectance of 15% or more and 25% or less is an unrecorded state, and an amorphous state having a reflectance of less than 10% is a recorded state. In an optical information recording medium in which recording, reproduction, and erasing of an amorphous mark are performed by modulating the light intensity into two or more values by using focused light having a wavelength of 780 ± 30 nm from the side surface, the recording layer is formed of M _w (Sb _z Te _1-z ) _1-w (0 ≦ w <0.3, 0.5 <z <
0.9, M is In, Ga, Zn, Ge, Sn, Si, C
u, Au, Ag, Pd, Pt, Pb, Cr, Co, O,
Alloy thin film of at least one of S and Se), the film thickness is 15 nm or more and 30 nm or less, and the difference between the refractive index of the first lower protective layer and the refractive index of the substrate is less than 0.05. The thickness of the second lower protective layer is more than 0 nm and less than 30 nm thinner than the minimum thickness at which the reflectance in the crystalline state is the minimum value;
And the total thickness of the first lower protective layer and the second lower protective layer is 70
nm or more and less than 150 nm, and the depth of the guide groove is 25 nm or more and 45 nm or less, and the width is 0.4 μm or more and 0.6 μm or less.
An object of the present invention is to provide an optical information recording medium characterized by having a diameter of not more than μm.

The present invention relates to a CD-E using a phase change medium.
(Rewritable compact disc, CD-Erasabl
In the development process of e), attention was paid to the compatibility of groove signals, and A
This is because it has been found that forming a wobble for describing a TIP signal promotes deterioration during repeated overwriting. Before describing the detailed evaluation results, the structure and recording method of a phase change medium as used in the present invention will be described.

The optical recording medium of the present invention comprises a substrate
A transparent resin such as polycarbonate, acrylic, or polyolefin, or glass can be used. Among them, polycarbonate resin is the most preferable because it has the track record of being most widely used in CDs and is inexpensive. It is desirable that the phase change type recording layer is covered with a protective layer on the upper and lower sides.

More preferably, as shown in FIG. 2, it has a structure of a substrate 1 / dielectric lower protective layer 3 / recording layer 4 / dielectric upper protective layer 5 / reflective layer 6, on which ultraviolet or thermosetting is applied. It is desirable that the protective resin be covered with a protective resin (protective coat layer 7). The recording layer 4, the protective layers 3, 5, and the reflective layer 6 are formed by a sputtering method or the like.

Forming a film using an in-line apparatus in which a target for a recording film, a target for a protective film and, if necessary, a target for a reflective layer material are installed in the same vacuum chamber, in order to prevent oxidation and contamination between layers. desirable. In order to prevent deformation due to high temperature during recording, a lower protective layer 3 is provided on the surface of the substrate 1 and an upper protective layer 5 is provided on the recording layer 4.
It is provided with a thickness of 10 to 500 nm.

The protective layer made of a dielectric or the like has a thickness of 10 nm.
If it is less than 30, the effect of preventing deformation of the substrate 1 and the recording film 4 is insufficient, and tends to not serve as a protective layer.
If the thickness exceeds 500 nm, the internal stress of the dielectric itself and the difference in elastic characteristics with the substrate 1 become remarkable, and cracks easily occur. More preferably, the thickness of the protective layer is 10 nm or more,
0 nm or less.

The material of the upper and lower protective layers is determined in consideration of the refractive index, thermal conductivity, chemical stability, mechanical strength, adhesion, and the like. Generally, M which has high transparency and high melting point
g, Ca, Sr, Y, La, Ce, Ho, Er, Yb,
Ti, Zr, Hf, V, Nb, Ta, Zn, Al, S
oxides, sulfides, nitrides such as i, Ge, Pb, Ca, M
g, a fluoride such as Li can be used.

These oxides, sulfides, nitrides, and fluorides do not necessarily have to have a stoichiometric composition, and it is effective to control the composition for controlling the refractive index and the like, or to use a mixture thereof. It is. Considering the repetitive recording characteristics, a dielectric mixture is preferred. More specifically, a mixture of ZnS or a rare-earth sulfide and a heat-resistant compound such as an oxide, a nitride, and a carbide may be used.

The film density of these protective layers is 8 in the bulk state.
0% or more is desirable from the viewpoint of mechanical strength (T
Hin Solid Films, Vol. 278 (19
1996), pp. 74-81). When a mixture dielectric thin film is used, the theoretical density of the following equation is used as the bulk density. ρ (bulk density) = Σmi (molar concentration of each component i) ρi
(Single Bulk Density) In the present invention, particularly with respect to the lower protective layer, when the lower protective layer is formed as a single layer, its thickness is 70 nm or more and less than 150 nm, preferably 70 nm or more, and 90 n.
m or less. Preferred material is (ZnS)
_1-X (SiO ₂ ) _X 0.13 ≦ X ≦ 0.17, while a preferred embodiment of the upper protective layer is (ZnS) _1-y (SiO ₂ ) _y having a thickness of 20 nm or more and 30 nm or less, 0.1
8 ≦ y ≦ 0.22.

When the lower protective layer has a two-layer structure, the difference between the refractive index of the first lower protective layer on the substrate side and the refractive index of the substrate is less than 0.05, and The thickness of the second lower protective layer is more than 0 nm and less than 30 nm thinner than the minimum thickness at which the reflectance in the crystalline state becomes a minimum, and the first lower protective layer and the second lower protective layer are combined. 70n
m or more and less than 150 nm, preferably 70 nm or more, 9
It is good to be 0 nm or less.

The recording layer of the medium of the present invention is a phase change type recording layer, and its thickness is in the range of 15 nm to 30 nm. This range is preferable in order to obtain a contrast that is compatible with a CD. If it is less than 15 nm, the reflectance is too low, and if it is more than 30 nm, the heat capacity becomes large and the recording sensitivity becomes poor.

For the recording layer, M _w (Sb _z Te _1-z ) _1-w (0 ≦ w <) mainly containing a SbTe alloy near the eutectic point of Sb ₇₀ Te ₃₀ due to the limitation of optical characteristics described later. 0.3, 0.5
<Z <0.9, M is In, Ga, Zn, Ge, Sn, S
i, Cu, Au, Ag, Pd, Pt, Pb, Cr, C
o, O, S, Se).

This alloy thin film is stable in both crystalline and amorphous states, and is capable of high-speed phase transition between both states.
Further, it has the advantage that segregation hardly occurs when repeated overwriting is performed, and is the most practical material. As a more specific and preferred example, AgαInβSb
γTeη, 3 <α <10, 3 <β <8, 55 <γ <6
5, 25 <η <35, 6 <α + β <13, α + β + γ +
A recording layer having a composition of η = 100 is exemplified.

According to the study of the present inventors, by limiting the composition as described above, in particular, at most C-E can be obtained as CD-E.
It was found that when overwriting at about 6 times the D linear velocity, the composition can be selectively used as a composition excellent in repeated overwriting durability and stability over time. The linear velocity dependence is determined by the main components Sb and Te.
b is 65 at. % (Atomic%), it becomes difficult to form an amorphous mark at a low linear velocity. %, The crystallization rate is too slow to be sufficiently erased.

Within this range, the crystallization rate increases as the Sb / Te ratio increases, but the optimum composition is selected in consideration of the heat distribution determined by the layer structure. In has the effect of increasing the crystallization temperature and increasing the stability over time. To ensure storage stability at room temperature, at least 3 at. % Or more is necessary. 8 at. %, It is not preferable because phase separation is likely to occur and segregation is likely to occur due to repetitive overwriting.

Ag is used to facilitate initialization of the amorphous film immediately after film formation. 10a depending on initialization method
t. % Is sufficient, and too much is unfavorable because the stability with time is impaired. Ag and In
13 at. % Is not preferable because segregation is apt to occur during repeated overwriting.

Another example of a suitable recording layer is M _z G
e _y (Sb _x Te _1-x ) _1-yz (where M is Ag or Z
n is at least one of 0.60 ≦ x ≦ 0.85,
0.01 ≦ y ≦ 0.20, 0.01 ≦ z ≦ 0.15,
0.02 ≦ y + z <0.30). This can improve the ease of precipitation of the low melting point metal In and the In-containing alloy in the AgInSbTe alloy.

The reflective layer is provided to increase the signal amplitude by more actively using the optical interference effect, and to function as a heat dissipation layer to provide a supercooled state necessary for forming an amorphous mark. This is to make it easier to obtain For this reason, the reflective layer is desirably made of a metal having high reflectivity and high thermal conductivity, specifically, Au, Ag, Al, and the like. However, semiconductors such as Si and Ge may be used to increase the degree of freedom in optical design.

From the viewpoints of economy and corrosion resistance, Al is made of Ta, Ti, Cr, Mo, Mg, Zr, V, Nb, etc. at 0.5 at. % Or more and 5 at. % Or less is desirable. Particularly preferred are Ta and Ti. Generally, the thermal conductivity is controlled by utilizing the property that the thermal conductivity is reduced when the amount of impurities mixed with Al is large.

In particular, the addition of Ta results in a highly corrosion-resistant material (Japanese Patent Laid-Open No. 1-169751). Also, up to 5a
t. %, There is also an advantage that the thermal conductivity can be controlled over a wide range from 1/3 to 1/4 of pure Al. The composition and thickness of the reflective layer are optimized from the viewpoint of controlling the cooling rate for cooling through the upper protective layer for forming an amorphous layer.

If the thickness is too large, the sensitivity is lowered.
0 nm or less is desirable. If it is less than 50 nm, the cooling effect tends to be insufficient. In order to effectively utilize the cooling effect of the reflective layer, the thickness of the upper protective layer should be 20 nm or more and 30 n.
m or less is desirable. More specifically, as a preferable example, as a layer configuration for obtaining a sufficient cooling effect without lowering the recording sensitivity, the thickness of the upper protective layer is as thick as 25 nm or more and 30 nm or less. _1-v Ta v, 0.
It is preferable that 01 ≦ v ≦ 0.02 be set to 50 nm or more and 150 nm or less.

The thicknesses of the recording layer and the protective layer will be described in more detail. Considering the interference effect associated with the multilayer structure in addition to the mechanical strength and reliability limitations, the laser light absorption efficiency is good and the amplitude of the recording signal, that is, the contrast between the recorded state and the unrecorded state is large. Is chosen to be In order to ensure compatibility as a CD-E, it is necessary to set a high degree of modulation defined by the CD standard.

As shown in FIG. 3, the modulation degree is the signal intensity Ito at the top of the 11T mark in the DC reproduced signal (reproduced signal including the DC component) when the EFM signal is recorded.
It is defined as the ratio I ₁₁ / I top between p and the signal amplitude I ₁₁ . Itop actually corresponds to the reflectivity in the groove of the unrecorded portion (crystal state). I ₁₁ is the intensity difference and the phase difference of the reflected light from the crystalline portion and the amorphous portion of the phase change medium is a problem.

The difference in reflected light intensity is basically determined by the difference in reflectance between the crystalline state and the amorphous state. On the other hand, when an amorphous mark recorded in a groove having a width smaller than about 1 μm is read by a focused light beam having a diameter similar to that of the amorphous mark, interference of a plane wave must be considered. That is, it is necessary to consider the phase difference between the amorphous mark and the reflected light in the crystalline state.

The phase difference δ is expressed by the following equation δ = (phase of a reflected wave passing through a crystal region) when a reflected light is read from a recording medium having the above-mentioned multilayer structure by inputting a reproduction light beam from the back surface of the substrate. − (Phase of the reflected wave passing through the amorphous region) (see FIG. 4). When δ is negative, the phase in the amorphous state is advanced, and when δ is positive, the phase in the crystalline state is advanced. On the other hand, when groove recording is performed, a phase difference occurs due to the groove depth expressed by the following equation. Φ = (phase of reflected wave from groove portion) − (phase of reflected wave from land portion) When viewed from the light incident on the substrate surface, the land portion is farther and the phase advances, so that Φ <0. When Φ is added to the previous δ, local plane wave interference occurs in the focused light beam, the reflectance of the amorphous portion recorded in the groove decreases, and the reflection of a mere crystalline state and an amorphous state In some cases, the contrast may be higher than the rate difference. The condition for this is -π <δ <0.

However, the phase can be reduced with a period of 2π. In the four-layer configuration in which the lower protective layer, the recording layer, the upper protective layer, and the reflective layer are provided on the substrate according to the present invention, the lower protective layer thickness dependency is most remarkable. FIG. 5 shows a calculation example of the reflectance and the phase difference between a crystal and an amorphous in a typical four-layer configuration.

FIG. 5A shows an example of the recording layer material of the present invention.
Ag_FiveIn₆Sb₆₀Te₂₉In the case of the recording layer, FIG.
Ge is a desired phase change medium material but not suitable for the present invention._{twenty two}
Sb _{twenty five}Te₄₃This is the case of the recording layer. Measured refractive index of each layer
Values are used. In addition, the recording layer, upper protective layer, and reflective layer
20nm, 22.5nm and 200nm respectively
Was.

As far as the dependence on the lower protective layer is concerned, the change in amplitude is usually small and strongly depends on the denominator Itop, ie, the reflectivity of the crystalline state. Therefore, it is desirable that the crystal state reflectance be as low as possible. In the calculation example of FIG.
2.1 (ZnS) ₈₀ (SiO ₂ ) ₂₀ was assumed.
In the minimum value d ₁ 60 nm or more, 80 nm or less, the second minimum value d ₂ in 250nm or more, equal to or less than 270 nm.

Thereafter, it changes periodically. The thickness of the lower protective layer at which the reflectivity in the crystalline state is minimal is substantially determined only by the refractive index of the protective layer in a recording layer having a high reflectivity. This point can be understood from the fact that the minimum points are almost the same in both FIGS. 5 (a) and 5 (b).

If d ₁ and d ₂ are multiplied by 2.1 / n, a minimum point film thickness at almost another refractive index n can be obtained.
Since it is 1.8 to 2.3, d ₁ is at most about 85 nm. When the refractive index of the lower protective layer is smaller than 1.8, the reflectance at the minimum point increases, and the degree of modulation is significantly reduced.
It is not preferable because it becomes less than 5.

Conversely, if the ratio is 2.3 or more, the reflectance at the minimum point becomes too low to achieve 20%, and it becomes difficult to perform focusing and tracking servo. As described above, it is desirable that the phase difference is advanced in the amorphous state as described above. However, if the influence is too large, the same effect as changing the groove shape at the same time as the recording occurs, so that the servo becomes unstable. easy.

In particular, when the sum of the phase Φ due to the groove depth and the phase difference δ between the crystal and the amorphous becomes π, it is difficult to obtain a push-pull signal, which is not preferable. The phase difference due to the groove depth is 0.08π at most in the case of the present invention. The phase difference δ is desirably less than 0.5π. Recording layer thickness 20
In FIG. 5B, the phase difference δ is close to π near the minimum point of the reflectance of the crystal state, which is not preferable in the vicinity of nm.

It is also not preferable that the phase difference δ changes rapidly with the change in the thickness of the lower protective layer. Ge ₂₂ S
The b ₂₅ Te ₄₃ recording layer is a promising Ge ₂ S phase change medium.
It can be seen that the composition is not suitable for the recording medium of the present invention using the minimum point of reflectance even though the composition is close to b ₂ Te ₅ .

Sb₇₀Te₃₀30 elements at most in composition near eutectic point
In the recording layer of the present invention to which an additive element of about 10
Optical characteristics almost similar to (a) are exhibited. This is
Coming GeTe-Sb_TwoTe_ThreeOthers proposed with pseudo binary alloys
This is a great difference between the invention and the present invention. In general, invitation
The conductor protection film is ZnS: SiO_TwoWould be a mixed film like
And Ta_TwoO _FiveCompounds such as
And the deposition rate by the sputtering method is extremely slow,
It is as follows.

For this reason, the film thickness having the second minimum value in FIG. From the viewpoint of productivity, it is desirable that the thickness of the lower protective layer be less than 150 nm. This is because at present, the film formation rate of the dielectric protective layer by the sputtering method is at most 15 nm / sec, and it takes more than 10 seconds to form the film, thereby increasing the cost.

Further, the allowable value of the film thickness variation becomes severe, which is not preferable in production. That is, as can be seen from FIG. 5, if the reflectance deviates by Δd from the desired film thickness d ₀ , the reflectivity may be near the first minimum value d _{1 or} near the second minimum value d _2. fluctuate. Meanwhile, manufacturing the film thickness distribution is determined by some percentage relative to d _0, which is usually the limit of d ₀ ± 2 to 3% uniformity.

Therefore, as d ₀ is smaller, the variation width Δd of the film thickness is smaller.
Is small, and the reflectance variation in the disk surface or between disks can be suppressed, which is advantageous. In the sputtering apparatus inexpensive stationary facing type having no substrate revolving mechanism, inevitably employed the thickness of the first minimum value d ₁ possible neighborhood mass produced as a result. On the other hand, in order to suppress substrate deformation, a certain thickness of the lower protective layer is required.

FIG. 6 shows the dependency of the repetitive overwrite durability on the thickness of the lower protective layer. The groove width is almost constant at 0.55 μm. When the thickness of the lower protective layer is less than 70 nm, the durability is rapidly deteriorated. In particular, the jitter sharply increases in the early stage when the number of repetitions is less than several hundred. The deterioration of the jitter at the initial stage of repetition remarkably depends on the thickness of the lower protective layer.

According to observations made by the present inventors using an atomic force microscope (AFM), this initial deterioration is caused by the fact that the substrate surface has a thickness of 2 to 3n.
It was found that this was due to deformation by about m m. In order to suppress substrate deformation, it is necessary to have a heat insulating effect to prevent heat generation of the recording layer and to have a protective layer film thickness that mechanically suppresses deformation. In order to achieve a durability of at least 1,000 times,
It is understood that 0 nm or more, preferably 80 nm or more is required.

Therefore, in order to realize the overwrite durability of 1,000 times, which is the minimum required for this kind of rewritable medium while maintaining a high degree of modulation, it is necessary to keep Itop close to the minimum value as much as possible. It is necessary to aim for a thick film thickness. At this time, as can be seen from FIG. 5, the phase difference δ moves in a direction where the amplitude cannot be obtained, but even if the phase of the crystal state advances δ>
Even when the state is 0, there is no problem if | δ | <0.5π.

When δ> 0.5π, the phase difference has an adverse effect, and the amplitude expected from the reflectance difference cannot be obtained. Requirements for this is to employ a film thickness within the first 0~30nm than minimum point d _1. As another embodiment of the present invention, there is a method of positively utilizing the phase difference. Optically, the degree of modulation is large for the same reflectance difference, which is a preferable direction.

For this reason, it is preferable to use a lower protective layer which is thinner than 0 nm and 30 nm or less from the minimum point of the reflectance.
However, FIG. 6 clearly shows that the overwrite durability is insufficient. In order to solve this, the lower protective layer 3 is preferably divided into two layers, a first lower protective layer 3 'and a second lower protective layer 3 ", as shown in FIG.

The layer structure above the second lower protective layer 3 ″ is designed with priority given to optical characteristics, and the second lower protective layer 3 ″ is designed.
Is thinner than the minimum point of the reflectance by more than 0 nm and 30 nm or less, preferably 2 to 30 nm. The lower protective layer 3 is used to increase the mechanical strength by improving the total thickness of the first lower protective layer 3 ′ and the second lower protective layer 3 ″ to 70 nm or more and to improve the overwrite durability repeatedly.

At this time, by making the refractive index n ₁ of the first lower protective layer substantially equal to the refractive index nsub of the substrate, the film thickness can be freely designed independently of the optical design. That is, the optical requirements and the durability requirements can be virtually independently optimized. Ideally, n ₁ and nsub are exactly equal, but there is no practical problem if the difference is less than 0.05.

The typical polycarbonate resin substrate nsu
Since b is 1.55, n₁1.5 to 1.6
It is preferable to use a dielectric. Specific materials for that purpose
In general, SiO_TwoAnd ZnS and MgF_TwoOr CaF _TwoWith
There is a mixture. SiO_Two, SiC, Y_TwoO_ThreeA mixture of Zn
S, SiO_Two, MgF_TwoOr CaF_TwoThe mixture of
It is excellent in body durability and is more preferable.

As described above, by adopting the layer structure in consideration of the balance between high modulation degree, productivity and repetitive overwrite durability, it is possible to substantially maintain CD compatibility except that the recording signal quality is low in reflectance. . In the following, experimental examples will show that when the compatibility of the groove signal is taken into consideration, a deterioration phenomenon due to repeated overwriting due to the groove shape becomes a problem.

A groove pitch of 1.6 was formed on an injection-molded polycarbonate substrate having a diameter of 120 mm and a thickness of 1.2 mm.
A groove having a width of about 0.5 μm and a depth of about 40 nm was provided on the spiral. A wobble is formed in the groove with a signal of 22.05 kHz in a direction transverse to the groove. Four types of wobble amplitudes were used: 27 nm, 20 nm, 13.5 nm, and 0 nm (no wobble).

The wobble amplitude is determined by a measuring method defined by the CD-R standard, but the absolute value itself is a reference value, and it is sufficient if the relative magnitude can be managed. On this substrate, 100 n of (ZnS) ₈₀ (SiO ₂ ) ₂₀ (mol%) was formed as a lower protective layer.
m and Ag ₅ In ₆ Sb ₆₁ Te ₂₈ as a recording layer thereon.
0 nm, ₂₀ nm of (ZnS) ₈₀ (SiO ₂ ) ₂₀ as the upper protective layer, and 100 nm of Al _97.5 Ta _2.5 as the reflective layer
The layers were sequentially laminated, and a UV-curable resin (SD318, manufactured by Dainippon Ink) was coated thereon by several μm to form a phase change medium.

The recording was performed in the groove, and an amorphous mark was formed in the crystalline region. For this medium, the so-called C
Overwriting is repeatedly performed using an EFM random signal for recording a mark length of 3T to 11T with respect to the reference clock period T as shown in FIG. 8A at twice the speed of D (2.8 m / s). Was. The EFM signal is used in the CD standard.

The recording uses a method of dividing the signal of each length into pulses shown in FIG. 8B, and the recording power Pw is 1
1 mW, erase power Pe is 6 mW, bias power Pb
Is 0.8 mW. The signal quality was evaluated with the strictest 3T jitter. FIG. 9 shows the results.

It is necessary for the CD standard that the jitter be less than about 17.5 nsec at 2 × speed. As is clear from FIG. 9, in the groove having no wobble amplitude, the jitter is hardly deteriorated even after 10,000 times of overwriting.
As the wobble amplitude increases, the deterioration becomes remarkable.
It can be seen that the deterioration becomes significant at about 00 times.

Although the mechanism of the deterioration promotion due to the presence of the wobble is not always clear, it is considered that a part of the recording light beam 9 is easily irradiated to the side wall 10 of the groove as shown in FIG. Can be That is,
The focused light beam 9 to which the tracking servo is applied does not follow the wobble meandering, but proceeds straight in the center of the groove.

If there is a meandering of the groove wall 10, the light beam 9 is easily irradiated to the groove wall 10 though slightly, as shown in FIG. 10 (FIG. 10 exaggerates the wobble amplitude. The trend is considered correct). It is considered that the groove wall 10 is likely to be deteriorated due to thermal damage at the time of repetitive overwriting because stress concentration is apt to occur at the groove wall portion or the corner portion of the groove where the adhesion of the thin film is poor. Irradiation is thought to accelerate deterioration. FIG. 11 shows that the wobble amplitude and the groove depth are each 20 n.
m, 31 nm, and the repetitive overwrite durability when the groove width was changed was shown.

The measuring method and the layer structure were the same as in FIG. The initial jitter is about 10 nsec. In the groove recording of the phase change medium, there is a tendency that the deeper the groove, the thinner the groove, the better the durability.However, when a wobble is present, the above-mentioned deterioration phenomenon of the groove wall portion becomes remarkable if the groove width is too narrow. It can be seen that the deterioration is remarkable.

That is, the groove width is limited from the viewpoint of repeated overwrite durability, and is 0.4 μm to 0.6 μm.
It is desirable that: More preferably 0.45μ
m or more and 0.55 μm or less. From the viewpoint of CD compatibility, it is necessary to consider a groove signal as disclosed in, for example, JP-A-8-212550.

The groove shape specifically disclosed as preferable in this patent has a groove depth of 50 to 60 nm and a groove width of 0.3.
０．６0.6 μm. According to the study of the present inventors, in the layer configuration in consideration of the modulation degree, productivity, and repetitive overwrite durability, unless the groove depth is less than 45 nm, the push-pull value after recording is 0.1. Radial contrast value after recording is 0.6
From the above, it was found that the value becomes excessively large as compared with the value before recording of 0.1 to 0.2, which causes a problem in servo stability.

Here, the radial contrast RC is defined as follows. _{RC = 2 (I L -I G} ) / (I L + I G) where, I _L, the I _G land portions respectively, the reflected light intensity of the groove portion. The reflected light intensity is the sum signal I ₁ + I ₂ of the photodetectors arranged on the left and right with respect to the track center.

Actually, the groove and land strength of the track crossing signal obtained by applying only the focus servo is measured. Although defined before and after the recording, the radial contrast after the recording uses an intensity obtained by averaging the signal intensity of the reflectance reduction portion due to the recording by a low-pass filter. On the other hand, the push-pull value PPa after recording is also defined as PPa = (I ₁ −I ₂ ) / Itop using the average value of the difference signal.

Each of these is a general definition ("Compact Disc Reader", written by Heitaro Nakajima and Hiroshi Ogawa, Ohmsha, 1st Edition, Chapter 6, Section 6, etc.). It is specified in the CD standard (Red Book, Orange Book). Although the rewritable medium is the same CD compatible, the above patent stipulates the groove signal and the like related to the drive design. The specific configuration of the disk for implementing the same is as follows. It is.

For this reason, the recommended value of the specifically exemplified groove depth is as deep as 50 to 60 nm. It is considered that the difference from the above-mentioned patent is caused by the fact that the thickness of the lower protective layer exceeds the scope of the present invention. In other words, it is considered that if the thickness of the lower protective layer is large, the groove is filled and the groove shape seen from the recording layer surface becomes substantially shallow, so that it is necessary to set the groove shape deeper.

The present invention is different from the above-mentioned known documents in the overall design concept in that the present invention is designed with a set of the layer configuration and groove shape of the recording medium in consideration of not only the optical characteristics but also the balance between reliability and productivity. It must be said that there are significant differences, and as a result, differences have been made in the embodiments. On the other hand, if the groove depth is too shallow, it becomes difficult to manufacture a stamper or form a substrate, or it falls below the lower limit of radial contrast or push-pull, so that it cannot be made shallower than 25 nm.

Considering the dependence of the repetitive overwrite durability on the groove depth shown in FIG. 6, the thickness is more preferably 30 to 40 nm. The groove width is preferably 0.45 μm or more from the viewpoint of radial contrast after recording, and is 0.6 μm or less from the viewpoint of overwriting durability with respect to wobble and groove shape.

When the width is larger than 0.6 μm, it is not preferable because the phenomenon is a general phenomenon of a phase change medium, and when the width is smaller than 0.4 μm, deterioration due to overwrite durability due to the presence of wobble becomes unfavorable. More preferably 0.45 μm or more.
It is 55 μm or less. The present invention overcomes various constraints arising from the intent of a rewritable medium that is compatible with CD while having low reflectivity, and a specific measure for balancing between trade-off factors beyond a mere optimization procedure. Is found. Focusing only on the individual elements does not drastically exceed the preceding phase change media technology,
The industrial utility value of the D compatible rewritable medium is great.

[0084]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a specific example of a CD-E medium which has achieved high reliability and high productivity while taking compatibility with a CD into consideration will be described with reference to an embodiment. The present invention is not limited to the following examples unless otherwise described.

Example 1 and Comparative Example 1 Tables 1 and 2 show that the wobble amplitude is constant and the repetitive overwrite durability when the groove width and the groove depth are changed,
Optical characteristics and groove signal characteristics are summarized. Table 1 is an example within the scope of the present invention, and Table 2 is a comparative example outside the range. The layer configuration used in the experiment was that the lower protective layer (ZnS) ₈₀ (SiO ₂ ) ₂₀ was ₈₀ n
m, Ag ₅ In ₅ Sb ₆₀ Te ₃₀ recording layer 20 nm, upper protective layer (ZnS) ₈₀ (SiO ₂ ) ₂₀ 23 nm, reflective layer Al ₉₈ T
a ₂ is 100nm.

The (ZnS) ₈₀ (SiO ₂ ) ₂₀ protective layer had a film density of 3.5 g / cm ³ and a theoretical bulk density of 3.72 g / c.
It was 94% of the m ^3. All thin films were formed by sputtering without releasing the vacuum. The substrate was prepared by injection molding. The composition of each layer was confirmed by a combination of fluorescent X-ray analysis, atomic absorption analysis, X-ray excited photoelectron spectroscopy, and the like. The recording layer immediately after film formation is amorphous, and has a linear velocity of 3 m / h by a bulk eraser (Hitachi Computer Equipment, POP120, trade name).
In s, the substrate was irradiated with an initialization power of 500 mW to crystallize the entire surface to obtain an initial (unrecorded) state.

With this power, it is considered that the recording layer is once melted and recrystallized to re-solidify. The thickness of the lower protective layer is 5 nm from the minimum point of reflectance d ₁ = 75 nm in FIG.
It is thick. The substrate is a polycarbonate substrate having a thickness of 1.2 mm, and a wobble conforming to the CD-R standard (Orange Book, Part 2) such as amplitude, period, and modulation signal is formed at a pitch of 1.6 μm by injection molding.

For recording, the pulse strategy shown in FIG. 8 was used. The recording power Pw, erase power Pe, and bias power Pb were 12 mW, 6 mW, and 0.8 mW, respectively.
The best jitter was obtained near this power.
The recording optical head has a wavelength of 780 nm and NA = 0.55, and the linear velocity during recording is twice as high as the so-called CD linear velocity (2.
4 m / s).

The number of times of overwrite durability is the number of times that the jitter of the 3T mark is kept at 17.5 nsc or less, which is the upper limit of the CD standard, when overwriting is repeatedly performed at 2 × speed. The table also shows the radial contrast values RCb and RCa after recording. However, if the groove depth exceeds 45 nm due to deep groove formation, RCa exceeds 0.6, which is not preferable.

If the depth is more than 50 nm, the push-pull PPa after recording will exceed 0.1, which is not preferable. Further, the reflectivity in the groove was reduced to just below or below 15%, and the tracking servo became unstable. If the groove width is not in the range of 0.4 to 0.6 μm, the number of repeated overwrites of 1,000 cannot be achieved. If the groove depth is less than 25 nm, the radial contrast ratio before and after recording is much lower than 0.3, and the number of repeated overwrites is less than 500-600, which is not preferable.

Example 2 and Comparative Example 2 In Example 2 and Comparative Example 2, the lower protective layer was formed with two film thicknesses 8 near the minimum reflectance (75 nm and 250 nm).
Discs were created at 0 nm (Example 2) and 260 nm (Comparative Example 2). All were prepared in the same sputtering apparatus. The film density of the protective layer was about 93% of the bulk.

The thickness of the recording layer Ag ₅ In ₆ Sb ₅₉ Te ₃₀ is 2
0 nm, upper protective layer thickness 23 nm, reflective layer 100 n
m. Optically equivalent characteristics can be obtained. But,
As a result of measuring the reflectivity distribution, as shown in FIGS. 12 and 13, it was apparent that the reflectivity distribution in the disk surface was larger at 260 nm in Comparative Example 2.

FIGS. 12 and 13 show the radial distribution of the reflectance of the disks of Example 2 and Comparative Example 1, respectively. In the figure, the center broken line indicates the average value at each radius, and the upper and lower dotted line indicates the maximum value and the minimum value at each radius. The average value of all measurement points is set to <Rto
p> is standardized by <Rtop>.

In the case of the comparative example 2 including the circumferential distribution, the average values were in the range of + 11% and -7%. On the other hand, in Example 1, the average value was within ± 6%. In this experiment, a film thickness distribution of an average value of about 3% was generated in the sputtering film forming apparatus.
The distribution includes ± 2.5 nm and 8 nm, respectively. This is a very good distribution in the current stationary facing type sputtering apparatus.

On the other hand, the same film thickness change Δ
Since the reflectance changes by the same amount with respect to d, about ± 8 nm
In the case of Comparative Example 2 having a distribution, the reflectance distribution becomes large. It is desirable for the optical disk that the reflectivity distribution is within ± 10% within the same disk surface. From this viewpoint, and since the film formation time and material cost are also reduced to about 1/3, it is clearly confirmed that it is desirable to use the lower protective layer film thickness near the first minimum point from the viewpoint of productivity. Was.

Example 3 An Ag ₅ In ₅ Sb ₅₉ Te ₃₁ recording layer was formed with a thickness of 20 nm and a thickness of (ZnS)
₈₀ (SiO ₂ ) _{20 The} upper protective layer was 23 nm, the Al ₉₈ Ta ₂ reflective layer was 100 nm, and the composition and thickness dependence of the lower protective layer ZnS: SiO ₂ were examined. The groove depth is 35 nm and the groove width is 0.53 μm.

The refractive index n _ab of the ZnS: SiO ₂ mixed film is
ZnS (refractive index n _a = 2.3), SiO ₂ (refractive index n _b =
The ratio is determined in proportion to the molar ratio of 1.45). That is, (Z
For a composition of (nS) _{1- m} (SiO ₂ ) _m , n _ab = n _a (1-m) + n _b m.

FIG. 14 shows that m = 0.15, 0.20, 0.2
In the case of No. 5, the dependence of the reflectance and the degree of modulation near the first reflectance minimum point on the thickness of the lower protective layer was shown. The degree of modulation is indicated by a numerical value near each point in the figure. As the molar ratio of SiO ₂ increases and the refractive index decreases, the reflectance at the minimum point increases.

In this case, the range in which the thickness can be increased without greatly lowering the degree of modulation is narrowed, and is at most about 5 nm. On the other hand, if the refractive index is increased by reducing SiO ₂ to m = 0.15, it is necessary to remove the minimum point rather than to maintain the in-groove reflectivity of 15%. There is room for increasing the film thickness by 10 to 20 nm, and the overwrite durability can be improved while maintaining the same reflectance and modulation.

As shown in FIG. 6, in this film thickness region, 5n
It is advantageous for durability to increase the film thickness even if m. In fact, FIG.
FIG. 5 shows the results of evaluating the repeated overwrite durability of the lower protective layers shown as 1, 2, and 3 in FIG. 14 in the same manner as in FIG. In particular, it can be seen that the lower protective layer indicated by 3 in the figure is a preferred example of the present invention because the optical characteristics and the repeated overwrite durability are balanced.

However, the durability of the protective layer itself is m = 0.2
0 is the best and m less than 0.1 is not preferable. On the other hand, if m is larger than 0.3, there is a problem in stability over time, which is not preferable. The same composition is used for the upper and lower protective layers, or the lower protective layer is 0.13 ≦ m ≦ 0.1
7. Whether the upper protective layer has a slight composition difference (refractive index difference) as 0.18 ≦ m ≦ 0.22 can be appropriately selected depending on the strictness of optical requirements.

Example 4 A disk was prepared in the same manner as in Example 1 (b) except that the recording layer was changed to a Zn ₃ Ge ₈ Sb ₆₁ Te ₂₈ alloy layer, and the disk was initialized by a bulk eraser. Later, FIG.
The recording pulse strategy was applied to perform overwriting at twice the speed of CD. Pw = 13 mW, Pe = 6.
When 5 mW and Pb = 0.8 mW, the jitter is less than 10% of the clock period T = 115 nsec, the modulation factor is 0.70,
The reflectance is 18.1%, PPa = 0.076, RCb =
0.16, RCa = 0.51 (RCb / RCa = 0.3
1) was obtained. 2,000 overwrite durability
More than once.

[0103]

[Table 1]

[0104]

[Table 2]

[Brief description of the drawings]

FIG. 1 is an explanatory diagram of a wobble.

FIG. 2 is an explanatory diagram showing an example of an optical recording medium according to the present invention.

FIG. 3 is a diagram for explaining a modulation factor.

FIG. 4 is an explanatory diagram of a phase difference δ.

FIG. 5 is an explanatory diagram of a reflectance in a four-layer configuration and a phase difference between a crystal and an amorphous.

FIG. 6 is a diagram illustrating the relationship between overwrite durability and the thickness of a lower protective layer.

FIG. 7 is an explanatory diagram showing an example of an optical recording medium according to the present invention.

FIG. 8 is a diagram illustrating an example of an EFM random signal.

FIG. 9 is a diagram for explaining a change in overwrite characteristics due to a wobble amplitude.

FIG. 10 is an explanatory diagram of a relationship between a wobble and a recording light beam.

FIG. 11 is a diagram for explaining a change in overwrite characteristics depending on a groove width.

FIG. 12 is an explanatory diagram of the distribution of the reflectance of the disk according to the embodiment of the present invention.

FIG. 13 is an explanatory diagram of a distribution of reflectance of a disk in a comparative example of the present invention.

FIG. 14 is a diagram illustrating the dependency of the reflectance and the degree of modulation on the thickness of the lower protective layer.

FIG. 15 is a diagram illustrating overwrite durability with respect to the thickness of a lower protective layer.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Substrate 2 Groove 3 Lower protective layer 4 Recording layer 5 Upper protective layer 6 Reflective layer 7 Protective coat layer

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁷ Identification code FI G11B 7/24 561 G11B 7/24 561M (72) Inventor Sachiko Tsuboya 1000 Kamoshita-cho, Aoba-ku, Yokohama-shi, Kanagawa Prefecture Mitsubishi Chemical Corporation Yokohama Within the Research Institute (72) Inventor Towa Horie 1000, Kamoshida-cho, Aoba-ku, Aoba-ku, Yokohama-shi, Kanagawa Prefecture Within the Mitsubishi Chemical Corporation Yokohama Research Laboratory (56) References JP-A-7-93804 (JP, A) JP-A-8- 315425 (JP, A) JP-A-8-321077 (JP, A) JP-A-5-89519 (JP, A) JP-A-1-211249 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) G11B 7/24

Claims (7)

(57) [Claims] A track pitch of 1.6 ± 0.1 μm;
A lower protective layer, a phase change type recording layer, an upper protective layer, and a reflective layer are provided in this order on a substrate provided with a meandering guide groove, and a crystalline state having a reflectance of 15% or more and 25% or less is set to an unrecorded state and the reflectance is changed. The amorphous state of less than 10% is defined as a recording state, and a wavelength of 780 ± 30 n is set in the guide groove from the surface of the substrate opposite to the recording layer.
In an optical information recording medium for recording, reproducing, and erasing an amorphous mark by modulating the light intensity into two or more values using focused light of m, the recording layer is M _w (Sb _z Te _1-z ). _1-w (0 ≦ w <
0.3, 0.5 <z <0.9, M is In, Ga, Zn,
Ge, Sn, Si, Cu, Au, Ag, Pd, Pt, P
b, Cr, Co, O, S, Se) at least one alloy thin film having a thickness of 15 nm.
30 nm or less, and the thickness of the lower protective layer is 70 nm.
Not less than 150 nm and more than 0 nm and not more than 30 nm thicker than the film thickness at which the reflectivity of the crystalline state has a minimum value, and the depth of the guide groove is not less than 25 nm and not more than 45 nm and the width is not less than 0.4 μm and not more than 0.6 μm. An optical information recording medium, characterized in that: 2. The method according to claim 1, wherein the lower protective layer has a thickness of 70 nm or more and 90 nm or more.
The following (ZnS) _1-x (SiO ₂ ) _X 0.13 ≦ X ≦ 0.1
7, wherein the upper protective layer has a thickness of 20 nm or more and 30 nm or less (ZnS) _{1 -Y} (SiO ₂ ) _Y , 0.18 ≦ Y ≦ 0.22
The optical information recording medium according to claim 1, which is: 3. The track pitch is 1.6 ± 0.1 μm,
A first lower protective layer, a second lower protective layer, a phase-change recording layer, an upper protective layer, and a reflective layer are provided in this order on a substrate provided with a meandering guide groove, and the reflectivity is 15% or more and 25% or less. The crystalline state is an unrecorded state, the amorphous state having a reflectivity of less than 10% is a recorded state, and the light intensity is increased by using focused light having a wavelength of 780 ± 30 nm in the guide groove from the surface of the substrate opposite to the recording layer. In an optical information recording medium in which recording, reproduction, and erasing of an amorphous mark is performed by modulation of two or more values, the recording layer is formed of M _w (Sb
_z Te _1-z ) _1-w (0 ≦ w <0.3, 0.5 <z <0.9, M
Are In, Ga, Zn, Ge, Sn, Si, Cu, Au,
Ag, Pd, Pt, Pb, at least one of Cr, Co, O, S and Se) alloy thin film having a thickness of 15
nm or more and 30 nm or less, the difference between the refractive index of the first lower protective layer and the refractive index of the substrate is less than 0.05, and the thickness of the second lower protective layer is such that the reflectance in a crystalline state is a minimum value. The minimum thickness is more than 0 nm and less than 30 nm, and the total thickness of the first lower protective layer and the second lower protective layer is 70 nm or more and 15 nm or less.
An optical information recording medium characterized by having a thickness of less than 0 nm, a depth of a guide groove of 25 nm or more and 45 nm or less, and a width of 0.4 μm or more and 0.6 μm or less. 4. The optical information recording medium according to claim 1, wherein the guide groove has a depth of 30 nm to 40 nm and a width of 0.45 μm to 0.55 μm. 5. The film thickness of the lower protective layer or the total film thickness of the first lower protective layer and the second lower protective layer is 70 nm or more and 90 nm or less, and the film thickness of the upper protective layer is 10 nm or more and 30 nm or less. The reflective layer has an Al of 50 nm or more and 200 nm or less.
_1-V M _V , 0.005 ≦ V ≦ 0.05, M is Ta or Ti
The optical information recording medium according to any one of claims 1 to 4, wherein 6. The phase change type recording layer is made of AgαInβSbγTe.
η, 3 <α <10, 3 <β <8, 55 <γ <65, 25
<Η <35, 6 <α + β <13, α + β + γ + η = 10
The optical information recording medium according to any one of claims 1 to 5, which is 0. 7. A phase-change recording layer comprising M _z Ge _y (Sb _x Te _1-x )
_1-yz (where M is at least one of Ag and Zn, 0.60 ≦ x ≦ 0.85, 0.01 ≦ y ≦ 0.
20, 0.01 ≦ z ≦ 0.15, 0.02 ≦ y + z <
6. The optical information recording medium according to claim 1, which has a composition of 0.30).