JP3239762B2 - Bonding method of work with bump - Google Patents

Bonding method of work with bump

Info

Publication number
JP3239762B2
JP3239762B2 JP17761796A JP17761796A JP3239762B2 JP 3239762 B2 JP3239762 B2 JP 3239762B2 JP 17761796 A JP17761796 A JP 17761796A JP 17761796 A JP17761796 A JP 17761796A JP 3239762 B2 JP3239762 B2 JP 3239762B2
Authority
JP
Japan
Prior art keywords
work
bumps
anisotropic conductive
conductive tape
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP17761796A
Other languages
Japanese (ja)
Other versions
JPH1022344A (en
Inventor
満 大園
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to JP17761796A priority Critical patent/JP3239762B2/en
Publication of JPH1022344A publication Critical patent/JPH1022344A/en
Application granted granted Critical
Publication of JP3239762B2 publication Critical patent/JP3239762B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319Arrangement of the layer connectors prior to mounting
    • H01L2224/83192Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3494Heating methods for reflowing of solder

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、バンプ付きワーク
を異方性導電テープを介してワークにボンディングする
バンプ付きワークのボンディング方法に関するものであ
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for bonding a work with bumps, which bonds the work with bumps to the work via an anisotropic conductive tape.

【0002】[0002]

【従来の技術】バンプ付きチップやバンプ付き基板など
のバンプ付きワークを基板などのワークに実装する方法
として、異方性導電テープ(以下、ACFという)を用
いる方法が知られている。以下、ACFを用いた従来の
バンプ付きワークのボンディング方法について説明す
る。
2. Description of the Related Art As a method for mounting a work with a bump such as a chip with a bump or a substrate with a bump on a work such as a substrate, a method using an anisotropic conductive tape (hereinafter, referred to as ACF) is known. Hereinafter, a conventional method of bonding a work with a bump using the ACF will be described.

【0003】図8は、従来のバンプ付きチップを基板に
ボンディングした実装構造の部分断面図である。基板1
の上面にはパッド2が形成されている。またバンプ付き
チップ3の下面にはバンプ4が突設されている。基板1
の上面にACF5を貼着し、その上からバンプ付きチッ
プ3を熱圧着ツール6で押し付けることにより、バンプ
付きチップ3を基板1にボンディングするようになって
いる。ACF5は樹脂から成っており、これを170°
C程度に加熱することによりバンプ付きチップ3を基板
1にボンディングする。
FIG. 8 is a partial sectional view of a conventional mounting structure in which a chip with bumps is bonded to a substrate. Substrate 1
Pad 2 is formed on the upper surface of. A bump 4 is provided on the lower surface of the bumped chip 3. Substrate 1
A bump 5 is bonded to the substrate 1 by attaching an ACF 5 to the upper surface of the substrate 1 and pressing the chip 3 with the bump with a thermocompression bonding tool 6 from above. ACF5 is made of resin and is
The chip 3 with bumps is bonded to the substrate 1 by heating to about C.

【0004】[0004]

【発明が解決しようとする課題】しかしながら上記従来
の方法では、ACF5の表面に空隙(ボイド)7が発生
しやすいものであった。この空隙7は、バンプ付きチッ
プ3を基板1に接着するボンディング力を低下させ、ま
たパッド2やバンプ4の表面を酸化腐食させる。またバ
ンプ付きチップ3が実装された基板1を電子機器に組み
込んでバンプ付きチップ3を駆動させると、バンプ付き
チップ3は内部抵抗により発熱するが、この発熱により
空隙7内のエアが加熱されて膨張し、その結果、バンプ
付きチップ3を基板1から剥離させたり、あるいはバン
プ付きチップ3を破壊するなどの問題点を生じる。
However, in the above-described conventional method, voids (voids) 7 are easily generated on the surface of the ACF 5. The gap 7 reduces the bonding force for bonding the bumped chip 3 to the substrate 1 and causes the surfaces of the pads 2 and the bumps 4 to oxidize and corrode. Also, when the substrate 1 on which the bumped chip 3 is mounted is incorporated into an electronic device and the bumped chip 3 is driven, the bumped chip 3 generates heat due to internal resistance. As a result, the bumped chip 3 is peeled off from the substrate 1 or the bumped chip 3 is broken.

【0005】したがって本発明は、空隙(ボイド)の発
生を解消できるバンプ付きワークのボンディング方法を
提供することを目的とする。
SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a method for bonding a work having bumps, which can eliminate the generation of voids.

【0006】[0006]

【課題を解決するための手段】請求項1の発明は、ワー
クの表面に貼着される異方性導電テープの表面を加熱手
段により加熱することにより異方性導電テープの表面を
軟化させる工程と、異方性導電テープの軟化した表面
ワークの表面に押し付けて貼着する工程と、バンプ付き
ワークを異方性導電テープに押し付けてバンプをワーク
のパッド上に搭載し、熱圧着ツールを前記バンプ付きワ
ークに押し付け、この熱圧着ツールからの伝熱により前
記異方性導電テープを軟化・流動化させ、更に伝熱によ
る加熱を継続して前記異方性導電テープを硬化させて
ンディングする工程とからバンプ付きワークのボンディ
ング方法を構成した。
According to the first aspect of the present invention, the surface of the anisotropic conductive tape adhered to the surface of the work is heated by a heating means so that the surface of the anisotropic conductive tape is heated.
Softening , pressing the softened surface of the anisotropic conductive tape against the surface of the work, and attaching the work; pressing the work with bumps against the anisotropic conductive tape, mounting the bumps on the work pads , Connect the crimping tool to the bumped
The heat from the thermocompression bonding tool
The anisotropic conductive tape is softened and fluidized,
And a step of curing and bonding the anisotropic conductive tape while continuing heating to form a bonding method for a work with bumps.

【0007】また請求項の発明は、ワークの表面に貼
着された異方性導電テープの表面を加熱手段により加熱
することにより異方性導電テープの表面を軟化させる
程と、バンプ付きワークを異方性導電テープに押し付け
てバンプをワークのパッド上に搭載し、熱圧着ツールを
前記バンプ付きワークに押し付け、この熱圧着ツールか
らの伝熱により前記異方性導電テープを軟化・流動化さ
せ、更に伝熱による加熱を継続して前記異方性導電テー
プを硬化させてボンディングする工程とからバンプ付き
ワークのボンディング方法を構成した。
The invention according to claim 3 is a step of softening the surface of the anisotropic conductive tape by heating the surface of the anisotropic conductive tape attached to the surface of the work by a heating means. Press the work with bumps against the anisotropic conductive tape, mount the bumps on the work pads, and use the thermocompression bonding tool.
Press against the work with bumps
The heat transfer softens and fluidizes the anisotropic conductive tape.
The heating by heat transfer is continued to continue the anisotropic conductive tape.
The method for bonding the work with bumps was constituted by the steps of curing and bonding the bumps.

【0008】[0008]

【発明の実施の形態】本発明によれば、異方性導電テー
プ(ACF)の表面を加熱することにより、ACFの貼
着面を十分に軟化・流動化させ、空隙の発生を解消でき
る。
According to the present invention, by heating the surface of the anisotropic conductive tape (ACF), the surface to which the ACF is adhered can be sufficiently softened and fluidized, and the generation of voids can be eliminated.

【0009】以下、本発明の一実施の形態を図面を参照
しながら説明する。図1、図2、図3、図4、図5、図
6、図7は、本発明の一実施の形態のバンプ付きワーク
のボンディング工程図であって、ボンディングの工程順
に示している。
An embodiment of the present invention will be described below with reference to the drawings. FIGS. 1, 2, 3, 4, 5, 6, and 7 are bonding process diagrams of a work with bumps according to an embodiment of the present invention, which are shown in the order of the bonding process.

【0010】まず、図1に示すように、基板1を乾燥室
10に入れ、ヒータ11により基板1を加熱することに
より、基板1に含まれる水分を蒸発させて除去する。こ
のように基板1を乾燥させる理由は次のとおりである。
すなわち基板1には、バンプ付きチップと一緒に、他の
電子部品も実装される場合がある。この場合、この電子
部品を半田付けするために基板1は後工程で加熱炉へ送
られて加熱される。基板1が水分を含んでいると、この
加熱によりこの水分が蒸発し、基板1に貼着されたAC
F(後述)の貼着面にボイドが生じる。したがって図1
に示す乾燥工程により、基板1に含まれる水分を予め除
去するものである。勿論、ヒータ11によらずに除湿剤
などにより基板1を乾燥させてもよい。
First, as shown in FIG. 1, the substrate 1 is placed in a drying chamber 10 and the substrate 1 is heated by a heater 11 to evaporate and remove moisture contained in the substrate 1. The reason for drying the substrate 1 in this way is as follows.
That is, other electronic components may be mounted on the substrate 1 together with the chip with bumps. In this case, the substrate 1 is sent to a heating furnace and heated in a later step in order to solder the electronic component. When the substrate 1 contains moisture, the moisture evaporates due to this heating, and the AC adhered to the substrate 1 is removed.
Voids occur on the surface to which F is applied (described later). Therefore, FIG.
The moisture contained in the substrate 1 is removed in advance by the drying step shown in FIG. Of course, the substrate 1 may be dried with a dehumidifying agent or the like without using the heater 11.

【0011】次に図2に示すように、ACF5を貼着ツ
ール12の下面に真空吸着し、基板1の上方に位置させ
る。13はACF5の上面に貼着されたセパレータであ
る。このとき、加熱手段である熱風ノズル14を基板1
とACF5の間に位置させ、上方と下方へ熱風を吹き出
してACF5の下面と基板1の上面を加熱する。望まし
くは、基板1をヒートブロック15上に載置し、このヒ
ートブロック15によっても基板1を加熱する。16は
ヒートブロック15に内蔵されたヒータである。ACF
5の下面は、熱風ノズル14から吹き出される熱風によ
り、十分に軟化する温度まで加熱される。この加熱温度
は、ACF5の材質によって異るが、約80°Cもしく
はそれ以上である。
Next, as shown in FIG. 2, the ACF 5 is vacuum-adsorbed to the lower surface of the attaching tool 12 and positioned above the substrate 1. Reference numeral 13 denotes a separator attached to the upper surface of the ACF 5. At this time, the hot air nozzle 14 serving as a heating unit is connected to the substrate 1.
And the ACF 5, and hot air is blown upward and downward to heat the lower surface of the ACF 5 and the upper surface of the substrate 1. Desirably, the substrate 1 is placed on the heat block 15, and the heat block 15 also heats the substrate 1. Reference numeral 16 denotes a heater built in the heat block 15. ACF
The lower surface of 5 is heated to a temperature at which it is sufficiently softened by the hot air blown out from hot air nozzle 14. The heating temperature varies depending on the material of the ACF 5, but is about 80 ° C. or higher.

【0012】次に図3に示すように、熱風ノズル14を
退去させたうえで、貼着ツール12を下降させ、ACF
5を基板1の表面に押し付けて貼着する。この場合、図
2に示す工程でACF5の下面を加熱したことにより、
この下面は十分に軟化・流動化しているので、ACF5
の下面は基板1の表面にぴったりフィットし、基板1の
表面とACF5の下面の間に空隙(ボイド)は生じな
い。
Next, as shown in FIG. 3, after the hot air nozzle 14 is withdrawn, the attaching tool 12 is lowered and the ACF
5 is pressed against and adhered to the surface of the substrate 1. In this case, by heating the lower surface of the ACF 5 in the step shown in FIG.
Since this lower surface is sufficiently softened and fluidized, ACF5
Is fitted to the surface of the substrate 1 exactly, and no void is generated between the surface of the substrate 1 and the lower surface of the ACF 5.

【0013】次に図4に示すように、セパレータ13を
ACF5から剥ぎ取る。次に図5に示すように、ボンデ
ィングツール17の下面にバンプ付きチップ3を真空吸
着し、その下面のバンプ4を基板1の表面のパッド2に
位置合わせするとともに、熱風ノズル14をバンプ付き
チップ3と基板1の間に位置させ、熱風を吹き出してバ
ンプ付きチップ3の下面と基板1の表面を加熱する。こ
れによりACF5の上面は十分に軟化・流動化し、また
ACF5の上面に押し付けられるバンプ付きチップ3の
下面も十分に加熱される。
Next, as shown in FIG. 4, the separator 13 is peeled off from the ACF 5. Next, as shown in FIG. 5, the chip 3 with the bump is vacuum-sucked on the lower surface of the bonding tool 17, the bump 4 on the lower surface is aligned with the pad 2 on the surface of the substrate 1, and the hot air nozzle 14 is connected to the chip with the bump. 3 and the substrate 1, and the lower surface of the bumped chip 3 and the surface of the substrate 1 are heated by blowing hot air. Thereby, the upper surface of the ACF 5 is sufficiently softened and fluidized, and the lower surface of the chip 3 with bumps pressed against the upper surface of the ACF 5 is also sufficiently heated.

【0014】次に図6に示すように熱風ノズル14を退
去させたうえで、ボンディングツール17を下降させて
バンプ付きチップ3をACF5に押し付け、バンプ4を
パッド2上に搭載する。この場合、図5に示す工程でA
CF5の上面は熱風が吹き付けられて十分に軟化・流動
化しており、またバンプ付きチップ3の下面も十分に加
熱されているので、ACF5の上面はバンプ付きチップ
3の下面に完全にフィットし、両者の間に空隙を生じな
い。
Next, as shown in FIG. 6, after the hot air nozzle 14 is withdrawn, the bonding tool 17 is lowered to press the bumped chip 3 against the ACF 5, and the bump 4 is mounted on the pad 2. In this case, the process shown in FIG.
The upper surface of the CF 5 is sufficiently softened and fluidized by blowing hot air, and the lower surface of the chip 3 with bumps is also sufficiently heated, so that the upper surface of the ACF 5 completely fits the lower surface of the chip 3 with bumps. There is no gap between the two.

【0015】次に図7に示すように、ボンディングツー
ル17に代えて熱圧着ツール18をバンプ付きチップ3
の上面に押し付ける。するとACF5はヒートブロック
15からの伝熱と熱圧着ツール18からの伝熱により、
その内部まで十分に加熱されて軟化・流動化し、バンプ
付きチップ3の表面にぴったり密着して滑らかなフィレ
ット面(滑らかな傾斜面)5aが形成される。更にこの
まま加熱を継続すると、流動化したACF5は硬化す
る。そこで熱圧着ツール18を退去させ、一連の動作は
終了する。19は熱圧着ツール18に備えられたヒータ
である。以上のように、この方法によれば、空隙(ボイ
ド)が生じないように、バンプ付きチップ3をACF5
により基板1にしっかりボンディングすることができ
る。
Next, as shown in FIG. 7, instead of the bonding tool 17, a thermocompression bonding tool 18 is used.
Press on top of Then, the ACF 5 transmits heat from the heat block 15 and heat from the thermocompression bonding tool 18,
The inside is sufficiently heated to be softened and fluidized, and the surface of the chip 3 with bumps is closely adhered to form a smooth fillet surface (smooth inclined surface) 5a. If the heating is further continued as it is, the fluidized ACF5 hardens. Then, the thermocompression bonding tool 18 is removed, and a series of operations is completed. Reference numeral 19 denotes a heater provided in the thermocompression bonding tool 18. As described above, according to this method, the chip 3 with the bumps is placed in the ACF 5 so that no void is generated.
Thus, the semiconductor device can be firmly bonded to the substrate 1.

【0016】なお上述したように、このバンプ付きチッ
プ3と一緒に、このバンプ付きチップ3以外の他の電子
部品も基板1に併せて搭載し、加熱炉へ送って半田付け
する場合もあるが、この場合も、図1に示す工程で基板
1に含まれる水分を除去しているので、基板1とACF
5の間にボイドが生じることはない。
As described above, there are cases where electronic components other than the bumped chip 3 are mounted on the substrate 1 together with the bumped chip 3 and sent to a heating furnace for soldering. Also in this case, since the moisture contained in the substrate 1 is removed in the step shown in FIG.
No voids occur between 5.

【0017】[0017]

【発明の効果】本発明は、ACFの表面を加熱手段によ
り加熱して軟化・流動化させたうえでACFをワークに
貼着し、またACF上にバンプ付きワークをボンディン
グするようにしているので、ACFの貼着面に空隙(ボ
イド)が発生するのを確実に解消し、バンプ付きワーク
をワークにしっかりボンディングすることができる。
According to the present invention, the surface of the ACF is heated by a heating means to be softened and fluidized, then the ACF is attached to the work, and the work with bumps is bonded on the ACF. In addition, it is possible to reliably eliminate the generation of voids (voids) on the ACF attachment surface, and to securely bond the work with bumps to the work.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の一実施の形態のバンプ付きワークのボ
ンディング工程図
FIG. 1 is a bonding process diagram of a work with bumps according to an embodiment of the present invention.

【図2】本発明の一実施の形態のバンプ付きワークのボ
ンディング工程図
FIG. 2 is a bonding process diagram of a work with bumps according to an embodiment of the present invention.

【図3】本発明の一実施の形態のバンプ付きワークのボ
ンディング工程図
FIG. 3 is a bonding process diagram of a work with bumps according to an embodiment of the present invention.

【図4】本発明の一実施の形態のバンプ付きワークのボ
ンディング工程図
FIG. 4 is a bonding process diagram of a work with bumps according to an embodiment of the present invention.

【図5】本発明の一実施の形態のバンプ付きワークのボ
ンディング工程図
FIG. 5 is a bonding process diagram of a work with bumps according to an embodiment of the present invention.

【図6】本発明の一実施の形態のバンプ付きワークのボ
ンディング工程図
FIG. 6 is a bonding process diagram of a work with bumps according to an embodiment of the present invention.

【図7】本発明の一実施の形態のバンプ付きワークのボ
ンディング工程図
FIG. 7 is a bonding process diagram of a work with bumps according to an embodiment of the present invention.

【図8】従来のバンプ付きチップを基板にボンディング
した実装構造の部分断面図
FIG. 8 is a partial cross-sectional view of a conventional mounting structure in which a chip with bumps is bonded to a substrate.

【符号の説明】[Explanation of symbols]

1 基板 2 パッド 3 バンプ付きチップ 4 バンプ 5 ACF(異方性導電テープ) 10 乾燥室 14 熱風ノズル 17 ボンディングツール 18 熱圧着ツール Reference Signs List 1 substrate 2 pad 3 chip with bump 4 bump 5 ACF (anisotropic conductive tape) 10 drying chamber 14 hot air nozzle 17 bonding tool 18 thermocompression tool

Claims (4)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】ワークの表面に貼着される異方性導電テー
プの表面を加熱手段により加熱することにより異方性導
電テープの表面を軟化させる工程と、異方性導電テープ
の軟化した表面をワークの表面に押し付けて貼着する工
程と、バンプ付きワークを異方性導電テープに押し付け
てバンプをワークのパッド上に搭載し、熱圧着ツールを
前記バンプ付きワークに押し付け、この熱圧着ツールか
らの伝熱により前記異方性導電テープを軟化・流動化さ
せ、更に伝熱による加熱を継続して前記異方性導電テー
プを硬化させてボンディングする工程と、を含むことを
特徴とするバンプ付きワークのボンディング方法。
1. A anisotropically by heating by heating means the surface of the anisotropic conductive tape is adhered on the surface of the workpiece
Softening the surface of the electrical tape, and anisotropic conductive tape
Pressing the softened surface of the work to the surface of the work and sticking it, and pressing the work with bumps against the anisotropic conductive tape and mounting the bumps on the work pads, using the thermocompression bonding tool
Press against the work with bumps
The heat transfer softens and fluidizes the anisotropic conductive tape.
The heating by heat transfer is continued to continue the anisotropic conductive tape.
Curing the bumps and bonding.
【請求項2】前記加熱手段が、熱風を吹き出す熱風ノズ
ルであることを特徴とする請求項1記載のバンプ付きワ
ークのボンディング方法。
2. A hot air nozzle, wherein said heating means blows hot air.
The bonding method for a work with bumps according to claim 1, wherein:
【請求項3】ワークの表面に貼着された異方性導電テー
プの表面を加熱手段により加熱することにより異方性導
電テープの表面を軟化させる工程と、バンプ付きワーク
を異方性導電テープに押し付けてバンプをワークのパッ
ド上に搭載し、熱圧着ツールを前記バンプ付きワークに
押し付け、この熱圧着ツールからの伝熱により前記異方
性導電テープを軟化・流動化させ、更に伝熱による加熱
を継続して前記異方性導電テープを硬化させてボンディ
ングする工程と、を含むことを特徴とするバンプ付きワ
ークのボンディング方法。
Wherein anisotropically by heating by the heating means to the surface of the bonded anisotropic conductive tape surface of the workpiece
Step of softening the surface of the electrical tape, pressing the work with bumps against the anisotropic conductive tape, mounting the bumps on the work pads, and applying a thermocompression tool to the work with bumps
Press, heat transfer from this thermocompression bonding tool
Softens and fluidizes conductive tape, and heats it by heat transfer
And curing the anisotropic conductive tape to bond the work. 3. A method of bonding a work with bumps, the method comprising:
【請求項4】前記加熱手段が、熱風を吹き出す熱風ノズ4. A hot air nozzle which blows out hot air.
ルであることを特徴とする請求項3記載のバンプ付きワ4. The bumped wire according to claim 3, wherein
ークのボンディング方法。Bonding method.
JP17761796A 1996-07-08 1996-07-08 Bonding method of work with bump Expired - Fee Related JP3239762B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17761796A JP3239762B2 (en) 1996-07-08 1996-07-08 Bonding method of work with bump

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17761796A JP3239762B2 (en) 1996-07-08 1996-07-08 Bonding method of work with bump

Publications (2)

Publication Number Publication Date
JPH1022344A JPH1022344A (en) 1998-01-23
JP3239762B2 true JP3239762B2 (en) 2001-12-17

Family

ID=16034145

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17761796A Expired - Fee Related JP3239762B2 (en) 1996-07-08 1996-07-08 Bonding method of work with bump

Country Status (1)

Country Link
JP (1) JP3239762B2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3284262B2 (en) * 1996-09-05 2002-05-20 セイコーエプソン株式会社 Liquid crystal display device and electronic device using the same
JP2000012609A (en) * 1998-06-17 2000-01-14 Shinko Electric Ind Co Ltd Method of mounting semiconductor chip on circuit board
JP5020629B2 (en) * 2006-12-28 2012-09-05 パナソニック株式会社 How to connect electronic components
US10199351B2 (en) * 2015-12-30 2019-02-05 Skyworks Solutions, Inc. Method and device for improved die bonding

Also Published As

Publication number Publication date
JPH1022344A (en) 1998-01-23

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