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JP3239762B2 - Bonding method of the bump with work - Google Patents

Bonding method of the bump with work

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Publication number
JP3239762B2
JP3239762B2 JP17761796A JP17761796A JP3239762B2 JP 3239762 B2 JP3239762 B2 JP 3239762B2 JP 17761796 A JP17761796 A JP 17761796A JP 17761796 A JP17761796 A JP 17761796A JP 3239762 B2 JP3239762 B2 JP 3239762B2
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JP
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Grant
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP17761796A
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Japanese (ja)
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JPH1022344A (en )
Inventor
満 大園
Original Assignee
松下電器産業株式会社
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Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27Manufacturing methods
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319Arrangement of the layer connectors prior to mounting
    • H01L2224/83192Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesive
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3494Heating methods for reflowing of solder

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【発明の属する技術分野】本発明は、バンプ付きワークを異方性導電テープを介してワークにボンディングするバンプ付きワークのボンディング方法に関するものである。 The present invention relates to relates to a bonding method of the bumped work of bonding the work bumped work through an anisotropic conductive tape.

【0002】 [0002]

【従来の技術】バンプ付きチップやバンプ付き基板などのバンプ付きワークを基板などのワークに実装する方法として、異方性導電テープ(以下、ACFという)を用いる方法が知られている。 BACKGROUND ART bumped work such bumped chips or bumped substrate as a method of mounting a workpiece such as a substrate, an anisotropic conductive tape (hereinafter, referred to as ACF) method using a are known. 以下、ACFを用いた従来のバンプ付きワークのボンディング方法について説明する。 The following describes the bonding method of the conventional bumped work with ACF.

【0003】図8は、従来のバンプ付きチップを基板にボンディングした実装構造の部分断面図である。 [0003] Figure 8 is a conventional bumped chip is a partial cross-sectional view of a mounting structure bonded to the substrate. 基板1 Substrate 1
の上面にはパッド2が形成されている。 Pad 2 is formed on the top surface. またバンプ付きチップ3の下面にはバンプ4が突設されている。 Also on the lower surface of the bumped chip 3 bumps 4 are projected. 基板1 Substrate 1
の上面にACF5を貼着し、その上からバンプ付きチップ3を熱圧着ツール6で押し付けることにより、バンプ付きチップ3を基板1にボンディングするようになっている。 Adhered to ACF5 on the upper surface of, by pressing the bumped chip 3 thereon by thermocompression bonding tool 6, which is a bumped chip 3 so as to bond to the substrate 1. ACF5は樹脂から成っており、これを170° ACF5 is made of resin, which 170 °
C程度に加熱することによりバンプ付きチップ3を基板1にボンディングする。 Bonding a bumped chip 3 on the substrate 1 by heating to about C.

【0004】 [0004]

【発明が解決しようとする課題】しかしながら上記従来の方法では、ACF5の表面に空隙(ボイド)7が発生しやすいものであった。 In However the conventional methods [0006], voids 7 were those prone to the surface of the ACF 5. この空隙7は、バンプ付きチップ3を基板1に接着するボンディング力を低下させ、またパッド2やバンプ4の表面を酸化腐食させる。 The gap 7, the bumped chip 3 to reduce the bonding force for bonding to the substrate 1, also oxidize corrode the surface of the pad 2 and the bumps 4. またバンプ付きチップ3が実装された基板1を電子機器に組み込んでバンプ付きチップ3を駆動させると、バンプ付きチップ3は内部抵抗により発熱するが、この発熱により空隙7内のエアが加熱されて膨張し、その結果、バンプ付きチップ3を基板1から剥離させたり、あるいはバンプ付きチップ3を破壊するなどの問題点を生じる。 Further, when driving the bumped chip 3 incorporates substrate 1 is bumped chips 3 are mounted on electronic equipment, the bumped chip 3 generates heat by an internal resistance, and air in the gap 7 is heated by the heating expanded, resulting in a problem such as a bumped chip 3 or destroy is peeled from the substrate 1, or a bumped chip 3.

【0005】したがって本発明は、空隙(ボイド)の発生を解消できるバンプ付きワークのボンディング方法を提供することを目的とする。 [0005] Accordingly, the present invention aims to provide a bonding method of the bumped work generated can eliminate voids.

【0006】 [0006]

【課題を解決するための手段】請求項1の発明は、ワークの表面に貼着される異方性導電テープの表面を加熱手段により加熱することにより異方性導電テープの表面を SUMMARY OF THE INVENTION claims 1 invention, the surface of the anisotropic conductive tape by heating by heating means the surface of the anisotropic conductive tape is adhered on the surface of the workpiece
軟化させる工程と、異方性導電テープの軟化した表面をワークの表面に押し付けて貼着する工程と、バンプ付きワークを異方性導電テープに押し付けてバンプをワークのパッド上に搭載し、熱圧着ツールを前記バンプ付きワ A step of softening, equipped with a softened surface of the anisotropic conductive tape and a process of attaching and pressed against the surface of the workpiece, the bumps on the work of the pad is pressed against the bump with work in the anisotropic conductive tape, heat a crimping tool word with the bump
ークに押し付け、この熱圧着ツールからの伝熱により前 Pressed against the over-click, before the heat transfer from the thermo-compression bonding tool
記異方性導電テープを軟化・流動化させ、更に伝熱によ The serial anisotropic conductive tape is softened and fluidized, further heat transfer
る加熱を継続して前記異方性導電テープを硬化させてボ<br>ンディングする工程とからバンプ付きワークのボンディング方法を構成した。 That heating continued to constitute a bonding method of the bump with work and a step of ball <br> bindings by curing the anisotropic conductive tape.

【0007】また請求項の発明は、ワークの表面に貼着された異方性導電テープの表面を加熱手段により加熱することにより異方性導電テープの表面を軟化させる工<br>程と、バンプ付きワークを異方性導電テープに押し付けてバンプをワークのパッド上に搭載し、熱圧着ツールを [0007] A third aspect of the present invention, the higher engineering to soften the surface of the anisotropic conductive tape by heating by a heating means attached anisotropic conductive tape surface of the surface of the work <br> , equipped with a bump on the work of the pad is pressed against the bump with work in the anisotropic conductive tape, the thermo-compression tool
前記バンプ付きワークに押し付け、この熱圧着ツールか Pressed against the bumped work, or the thermo-compression tool
らの伝熱により前記異方性導電テープを軟化・流動化さ Softened and fluidized the anisotropic conductive tape by al heat transfer
せ、更に伝熱による加熱を継続して前記異方性導電テー So, the anisotropic conductive tape to further continue the heating by heat transfer
プを硬化させてボンディングする工程とからバンプ付きワークのボンディング方法を構成した。 The flop is cured to constitute a bonding method of the bump with work and a step of bonding.

【0008】 [0008]

【発明の実施の形態】本発明によれば、異方性導電テープ(ACF)の表面を加熱することにより、ACFの貼着面を十分に軟化・流動化させ、空隙の発生を解消できる。 According to the embodiment of the present invention, by heating the surface of the anisotropic conductive tape (ACF), sufficiently softened-fluidize the bonded wear surface of the ACF, can be eliminated occurrence of voids.

【0009】以下、本発明の一実施の形態を図面を参照しながら説明する。 [0009] will be described with an embodiment of the present invention with reference to the drawings. 図1、図2、図3、図4、図5、図6、図7は、本発明の一実施の形態のバンプ付きワークのボンディング工程図であって、ボンディングの工程順に示している。 1, 2, 3, 4, 5, 6, 7, a bonding process diagram of the bumped work of an embodiment of the present invention, showing the order of steps of bonding.

【0010】まず、図1に示すように、基板1を乾燥室10に入れ、ヒータ11により基板1を加熱することにより、基板1に含まれる水分を蒸発させて除去する。 [0010] First, as shown in FIG. 1, the substrate was placed 1 to the drying chamber 10, by heating the substrate 1 by the heater 11, is removed by evaporation of water contained in the substrate 1. このように基板1を乾燥させる理由は次のとおりである。 The reason for thus drying the substrate 1 is as follows.
すなわち基板1には、バンプ付きチップと一緒に、他の電子部品も実装される場合がある。 That is, the substrate 1, together with the bumped chip, there is a case that other electronic components are mounted. この場合、この電子部品を半田付けするために基板1は後工程で加熱炉へ送られて加熱される。 In this case, the substrate 1 to the electronic component soldering is heated and sent to the furnace in a later step. 基板1が水分を含んでいると、この加熱によりこの水分が蒸発し、基板1に貼着されたAC When the substrate 1 contains moisture, this moisture is evaporated by the heat, it is adhered to the substrate 1 AC
F(後述)の貼着面にボイドが生じる。 Voids bonded wear surface of the F (described later) occurs. したがって図1 Thus Figure 1
に示す乾燥工程により、基板1に含まれる水分を予め除去するものである。 Drying steps shown in, is to advance removing water contained in the substrate 1. 勿論、ヒータ11によらずに除湿剤などにより基板1を乾燥させてもよい。 Of course, the substrate 1 may be dried such as by dehumidifying agent regardless of the heater 11.

【0011】次に図2に示すように、ACF5を貼着ツール12の下面に真空吸着し、基板1の上方に位置させる。 [0011] Next, as shown in FIG. 2, and vacuum suction ACF5 the lower surface of the sticking tool 12, is positioned above the substrate 1. 13はACF5の上面に貼着されたセパレータである。 13 is a separator adhered to the upper surface of the ACF 5. このとき、加熱手段である熱風ノズル14を基板1 At this time, the hot air nozzle 14 is a heating means substrate 1
とACF5の間に位置させ、上方と下方へ熱風を吹き出してACF5の下面と基板1の上面を加熱する。 When is positioned between the ACF 5, hot air upward and downward blowoff to heat the lower surface and the upper surface of the substrate 1 of the ACF 5. 望ましくは、基板1をヒートブロック15上に載置し、このヒートブロック15によっても基板1を加熱する。 Desirably, the substrate is placed 1 on heat block 15, also heat the substrate 1 by the heat block 15. 16はヒートブロック15に内蔵されたヒータである。 16 is a heater built in the heat block 15. ACF ACF
5の下面は、熱風ノズル14から吹き出される熱風により、十分に軟化する温度まで加熱される。 Underside of 5, the heated air discharged from the hot air nozzles 14 is heated to a temperature sufficiently softened. この加熱温度は、ACF5の材質によって異るが、約80°Cもしくはそれ以上である。 The heating temperature, are the material of ACF5 is about 80 ° C or more.

【0012】次に図3に示すように、熱風ノズル14を退去させたうえで、貼着ツール12を下降させ、ACF [0012] Next, as shown in FIG. 3, after dismissed hot air nozzles 14, lowering the sticking tool 12, ACF
5を基板1の表面に押し付けて貼着する。 5 is stuck against the surface of the substrate 1. この場合、図2に示す工程でACF5の下面を加熱したことにより、 In this case, by heating the lower surface of ACF5 in the step shown in FIG. 2,
この下面は十分に軟化・流動化しているので、ACF5 Since the lower surface is sufficiently softened and fluidization, ACF5
の下面は基板1の表面にぴったりフィットし、基板1の表面とACF5の下面の間に空隙(ボイド)は生じない。 The lower surface is fit to the surface of the substrate 1, the gap between the lower surface of the surface and ACF5 substrate 1 (void) does not occur.

【0013】次に図4に示すように、セパレータ13をACF5から剥ぎ取る。 [0013] Next, as shown in FIG. 4, stripping the separator 13 from the ACF 5. 次に図5に示すように、ボンディングツール17の下面にバンプ付きチップ3を真空吸着し、その下面のバンプ4を基板1の表面のパッド2に位置合わせするとともに、熱風ノズル14をバンプ付きチップ3と基板1の間に位置させ、熱風を吹き出してバンプ付きチップ3の下面と基板1の表面を加熱する。 Next, as shown in FIG. 5, bonding a bumped chip 3 on the lower surface of tool 17 by vacuum suction, while aligning the bump 4 of the lower surface of the pad 2 on the surface of the substrate 1, the chip with the hot air nozzles 14 bumps 3 and is positioned between the substrate 1, by blowing hot air to heat the lower surface and the surface of the substrate 1 of the bumped chip 3. これによりACF5の上面は十分に軟化・流動化し、またACF5の上面に押し付けられるバンプ付きチップ3の下面も十分に加熱される。 Thus the upper surface of ACF5 are thoroughly softened and fluidized, and is heated the lower surface of the bumped chip 3 is pressed against the upper surface of ACF5 sufficiently.

【0014】次に図6に示すように熱風ノズル14を退去させたうえで、ボンディングツール17を下降させてバンプ付きチップ3をACF5に押し付け、バンプ4をパッド2上に搭載する。 [0014] Next, as shown in FIG. 6 in terms of dismissed hot air nozzle 14, pressing the bumped chip 3 ACF5 lowers the bonding tool 17, to mount the bump 4 on the pad 2. この場合、図5に示す工程でA A In this case, the process shown in FIG. 5
CF5の上面は熱風が吹き付けられて十分に軟化・流動化しており、またバンプ付きチップ3の下面も十分に加熱されているので、ACF5の上面はバンプ付きチップ3の下面に完全にフィットし、両者の間に空隙を生じない。 The upper surface of the CF5 is sufficiently softened and fluidized is blown hot air, and because the lower surface of the bumped chip 3 is also heated sufficiently, the upper surface of ACF5 perfectly fit to the lower surface of the bumped chip 3, no gaps between them.

【0015】次に図7に示すように、ボンディングツール17に代えて熱圧着ツール18をバンプ付きチップ3 [0015] Next, as shown in FIG. 7, the thermocompression bonding tool 18 bumped chip 3 in place of the bonding tool 17
の上面に押し付ける。 Pressing of the top surface. するとACF5はヒートブロック15からの伝熱と熱圧着ツール18からの伝熱により、 Then ACF5 by heat transfer from the heat transfer and thermal compression bonding tool 18 from the heat block 15,
その内部まで十分に加熱されて軟化・流動化し、バンプ付きチップ3の表面にぴったり密着して滑らかなフィレット面(滑らかな傾斜面)5aが形成される。 Therein until being sufficiently heated and softened, fluidized, in close contact tightly to the surface of the bumped chip 3 smooth fillet surfaces (smooth inclined surface) 5a is formed. 更にこのまま加熱を継続すると、流動化したACF5は硬化する。 Further, when the heating is continued in this state, ACF 5 is cured the fluidized. そこで熱圧着ツール18を退去させ、一連の動作は終了する。 Therefore dismissed thermocompression bonding tool 18, the series of operation ends. 19は熱圧着ツール18に備えられたヒータである。 19 is a heater provided in the thermo-compression tool 18. 以上のように、この方法によれば、空隙(ボイド)が生じないように、バンプ付きチップ3をACF5 As described above, according to this method, as voids does not occur, the bumped chip 3 ACF 5
により基板1にしっかりボンディングすることができる。 It can be firmly bonded to the substrate 1 by.

【0016】なお上述したように、このバンプ付きチップ3と一緒に、このバンプ付きチップ3以外の他の電子部品も基板1に併せて搭載し、加熱炉へ送って半田付けする場合もあるが、この場合も、図1に示す工程で基板1に含まれる水分を除去しているので、基板1とACF [0016] Note that as described above, with the bumped chip 3, other electronic components other than the bumped chip 3 is also mounted along the substrate 1, there is a case where soldering sent into the heating furnace even in this case, since the removal of the water contained in the substrate 1 in the step shown in FIG. 1, the substrate 1 and the ACF
5の間にボイドが生じることはない。 Not a void is formed between the 5.

【0017】 [0017]

【発明の効果】本発明は、ACFの表面を加熱手段により加熱して軟化・流動化させたうえでACFをワークに貼着し、またACF上にバンプ付きワークをボンディングするようにしているので、ACFの貼着面に空隙(ボイド)が発生するのを確実に解消し、バンプ付きワークをワークにしっかりボンディングすることができる。 According to the present invention, adhered to ACF after having softened, fluidized and heated by a heating means of the surface of the ACF to the work, also because so as to bond the bump with work on ACF , it is possible to reliably eliminate the voids are generated in bonded wear surface of the ACF, firmly bonding the bumps with work on the workpiece.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】本発明の一実施の形態のバンプ付きワークのボンディング工程図 Bonding process diagram of the bumped work of an embodiment of the present invention; FIG

【図2】本発明の一実施の形態のバンプ付きワークのボンディング工程図 [2] Bonding process diagram bumped work of an embodiment of the present invention

【図3】本発明の一実施の形態のバンプ付きワークのボンディング工程図 [Figure 3] bonding process diagram bumped work of an embodiment of the present invention

【図4】本発明の一実施の形態のバンプ付きワークのボンディング工程図 Bonding process diagram of the bumped work of an embodiment of the present invention; FIG

【図5】本発明の一実施の形態のバンプ付きワークのボンディング工程図 [5] Bonding process diagram bumped work of an embodiment of the present invention

【図6】本発明の一実施の形態のバンプ付きワークのボンディング工程図 [6] bonding process diagram of the bumped work of an embodiment of the present invention

【図7】本発明の一実施の形態のバンプ付きワークのボンディング工程図 [7] bonding process diagram of the bumped work of an embodiment of the present invention

【図8】従来のバンプ付きチップを基板にボンディングした実装構造の部分断面図 Figure 8 is a partial cross-sectional view of the conventional bumped chip bonded to substrate mounting structure

【符号の説明】 DESCRIPTION OF SYMBOLS

1 基板 2 パッド 3 バンプ付きチップ 4 バンプ 5 ACF(異方性導電テープ) 10 乾燥室 14 熱風ノズル 17 ボンディングツール 18 熱圧着ツール 1 substrate 2 pads 3 bumped chip 4 bumps 5 ACF (anisotropic conductive tape) 10 drying chamber 14 the hot air nozzles 17 bonding tool 18 thermocompression bonding tool

Claims (4)

    (57)【特許請求の範囲】 (57) [the claims]
  1. 【請求項1】ワークの表面に貼着される異方性導電テープの表面を加熱手段により加熱することにより異方性導 1. A anisotropically by heating by heating means the surface of the anisotropic conductive tape is adhered on the surface of the workpiece
    電テープの表面を軟化させる工程と、異方性導電テープ A step of softening the surface of the conductive tape, the anisotropic conductive tape
    の軟化した表面をワークの表面に押し付けて貼着する工程と、バンプ付きワークを異方性導電テープに押し付けてバンプをワークのパッド上に搭載し、熱圧着ツールを Of a step of attaching presses the softened surface to the surface of the workpiece, mounted bumps on the work of the pad is pressed against the bump with work in the anisotropic conductive tape, the thermo-compression tool
    前記バンプ付きワークに押し付け、この熱圧着ツールか Pressed against the bumped work, or the thermo-compression tool
    らの伝熱により前記異方性導電テープを軟化・流動化さ Softened and fluidized the anisotropic conductive tape by al heat transfer
    せ、更に伝熱による加熱を継続して前記異方性導電テー So, the anisotropic conductive tape to further continue the heating by heat transfer
    プを硬化させてボンディングする工程と、を含むことを特徴とするバンプ付きワークのボンディング方法。 Bonding method bumped workpiece which comprises the steps of bonding by curing flop, a.
  2. 【請求項2】 前記加熱手段が、熱風を吹き出す熱風ノズ Wherein said heating means, hot air blow hot air nozzle
    ルであることを特徴とする請求項1記載のバンプ付きワークのボンディング方法。 Bonding method bumped workpiece according to claim 1, characterized in that the le.
  3. 【請求項3】ワークの表面に貼着された異方性導電テープの表面を加熱手段により加熱することにより異方性導 Wherein anisotropically by heating by the heating means to the surface of the bonded anisotropic conductive tape surface of the workpiece
    電テープの表面を軟化させる工程と、バンプ付きワークを異方性導電テープに押し付けてバンプをワークのパッド上に搭載し、熱圧着ツールを前記バンプ付きワークに A step of softening the surface of the conductive tape, equipped with bumps on the work of the pad is pressed against the bump with work in the anisotropic conductive tape, the thermo-compression tool on the bumped work
    押し付け、この熱圧着ツールからの伝熱により前記異方 Pressing, the anisotropic by heat transfer from the thermo-compression bonding tool
    性導電テープを軟化・流動化させ、更に伝熱による加熱 Sex conductive tape is softened and fluidized, further heated by heat transfer
    を継続して前記異方性導電テープを硬化させてボンディ<br>ングする工程と、を含むことを特徴とするバンプ付きワークのボンディング方法。 Bonding method bumped workpiece, which comprises a step, which continues to cure the anisotropic conductive tape to Bondi <br> ring with a.
  4. 【請求項4】前記加熱手段が、熱風を吹き出す熱風ノズ Wherein said heating means, hot air blow hot air nozzle
    ルであることを特徴とする請求項3記載のバンプ付きワ 3. bumped word according which is a Le
    ークのボンディング方法。 Bonding method of over-click.
JP17761796A 1996-07-08 1996-07-08 Bonding method of the bump with work Expired - Fee Related JP3239762B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17761796A JP3239762B2 (en) 1996-07-08 1996-07-08 Bonding method of the bump with work

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17761796A JP3239762B2 (en) 1996-07-08 1996-07-08 Bonding method of the bump with work

Publications (2)

Publication Number Publication Date
JPH1022344A true JPH1022344A (en) 1998-01-23
JP3239762B2 true JP3239762B2 (en) 2001-12-17

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Country Status (1)

Country Link
JP (1) JP3239762B2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3284262B2 (en) * 1996-09-05 2002-05-20 セイコーエプソン株式会社 The liquid crystal display device and an electronic apparatus using the same
JP2000012609A (en) 1998-06-17 2000-01-14 Shinko Electric Ind Co Ltd Method of mounting semiconductor chip on circuit board
JP5020629B2 (en) * 2006-12-28 2012-09-05 パナソニック株式会社 How to connect electronic components

Also Published As

Publication number Publication date Type
JPH1022344A (en) 1998-01-23 application

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