JP3233258B2 - Nitride semiconductor electrode - Google Patents
Nitride semiconductor electrodeInfo
- Publication number
- JP3233258B2 JP3233258B2 JP10254296A JP10254296A JP3233258B2 JP 3233258 B2 JP3233258 B2 JP 3233258B2 JP 10254296 A JP10254296 A JP 10254296A JP 10254296 A JP10254296 A JP 10254296A JP 3233258 B2 JP3233258 B2 JP 3233258B2
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- Japan
- Prior art keywords
- nitride semiconductor
- electrode
- type
- layer
- present
- Prior art date
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Description
【０００１】[0001]
【発明の属する分野】本発明は窒化物半導体（ＩｎXＡ
ｌYＧａ1-X-YＮ、０≦X、０≦Y、X＋Y≦１）よりなり、
発光ダイオード（ＬＥＤ）、レーザダイオード（ＬＥ
Ｄ）等の発光素子、太陽電池、光センサー等の受光素子
に利用される窒化物半導体素子に係り、特に、窒化物半
導体素子のｐ型窒化物半導体表面に形成される電極に関
する。[0001] The present invention relates to a nitride semiconductor (In X A).
l Y Ga 1-XY N, 0 ≦ X, 0 ≦ Y, X + Y ≦ 1) consists,
Light emitting diode (LED), laser diode (LE
The present invention relates to a nitride semiconductor element used for a light-emitting element such as D) and a light-receiving element such as a solar cell and an optical sensor, and particularly to an electrode formed on a p-type nitride semiconductor surface of the nitride semiconductor element.
【０００２】[0002]
【従来の技術】窒化物半導体よりなる発光素子は、本出
願人により青色ＬＥＤ、緑色ＬＥＤとして最近実用化さ
れたばかりである。またＬＤに関しては１９９５年末
に、この材料を用いて室温において４１０ｎｍのパルス
発振が確認された。2. Description of the Related Art A light emitting device made of a nitride semiconductor has just recently been put to practical use as a blue LED or a green LED by the present applicant. As for LD, pulse oscillation of 410 nm was confirmed at room temperature using this material at the end of 1995.
【０００３】これらの発光素子はいずれもｐ型層とｎ型
層との間に発光する活性層が挟まれたダブルへテロ構造
を有しており、最上層のｐ層にはＮｉを含む正電極が設
けられている。Ｎｉを含む正電極はｐ型窒化物半導体と
良好なオーミック接触が得られ、さらに窒化物半導体と
の接着性にも優れており、現在、有用な電極となってい
る。Each of these light-emitting elements has a double hetero structure in which an active layer for emitting light is interposed between a p-type layer and an n-type layer, and the uppermost p layer has a positive layer containing Ni. Electrodes are provided. The positive electrode containing Ni has a good ohmic contact with the p-type nitride semiconductor and has excellent adhesiveness with the nitride semiconductor, and is currently a useful electrode.
【０００４】Ｎｉを含む電極の他にも、ｐ型窒化物半導
体の電極材料が提案されている。例えば特開平８−３２
１１５号公報には金属性窒化物と、金属性水素化物（水
素貯蔵金属）とを含む電極が示されており、具体的には
金属性水素化物にはＰｄ、金属性窒化物にはＴｉ、Ｈ
ｆ、Ｎｂ等が示されている。この技術は窒化物を作る金
属により窒化物半導体層内部の窒素を吸引して、電極直
下の窒化物半導体層の窒素空孔をなくし、さらに水素貯
蔵合金によりｐ型窒化物半導体より水素を奪いｐ型ドー
パントを活性化させて高キャリア濃度のｐ型層を得る作
用を奏するものである。In addition to Ni-containing electrodes, p-type nitride semiconductor electrode materials have been proposed. For example, JP-A-8-32
No. 115 discloses an electrode containing a metal nitride and a metal hydride (hydrogen storage metal), specifically, Pd for a metal hydride, Ti for a metal nitride, H
f, Nb, etc. are shown. This technique sucks nitrogen inside the nitride semiconductor layer with a metal that forms nitride, eliminates nitrogen vacancies in the nitride semiconductor layer immediately below the electrode, and further removes hydrogen from the p-type nitride semiconductor using a hydrogen storage alloy. This has the effect of activating the type dopant to obtain a p-type layer with a high carrier concentration.
【０００５】[0005]
【発明が解決しようとする課題】しかしながら、前記窒
化物を作る金属は、逆に窒化物半導体より窒素を奪い、
窒素空孔を増加させる。従って、窒素空孔が増えるため
にｐ型窒化物半導体がｉ型若しくはｎ型に近くなってし
まうため、安定して窒化物半導体にオーミックを得るこ
とは難しい。しかも、Ｔｉはｎ型窒化物半導体層のオー
ミック電極として用いられる材料である。However, the metal forming the nitride, on the other hand, deprives the nitride semiconductor of nitrogen,
Increase nitrogen vacancies. Therefore, the p-type nitride semiconductor becomes close to i-type or n-type due to an increase in the number of nitrogen vacancies. Therefore, it is difficult to stably obtain ohmic in the nitride semiconductor. Moreover, Ti is a material used as an ohmic electrode of the n-type nitride semiconductor layer.
【０００６】一方、Ｎｉを含む電極はＬＥＤの電極とし
ては非常に好ましい特性を示しているが、青色ＬＤのよ
うに早急に室温での連続発振が望まれている素子を実現
するには、さらに閾値を低下させる必要がある。そのた
めには窒化物半導体と接触抵抗ができるだけ低い電極を
実現しなければならない。特にｐ型窒化物半導体はｎ型
窒化物半導体に比較して抵抗率が大きいため、そのｐ型
窒化物半導体に形成する電極は閾値を低下させる上で非
常に重要である。On the other hand, an electrode containing Ni exhibits very favorable characteristics as an electrode of an LED. However, in order to realize an element such as a blue LD, which is required to continually oscillate at room temperature as soon as possible, it is necessary to use an electrode. The threshold needs to be lowered. For this purpose, an electrode having a contact resistance as low as possible with a nitride semiconductor must be realized. In particular, since a p-type nitride semiconductor has a higher resistivity than an n-type nitride semiconductor, an electrode formed on the p-type nitride semiconductor is very important in lowering the threshold.
【０００７】従って、本発明はこのような事情を鑑みて
成されたものであって、その目的とするところは、ｐ型
窒化物半導体と安定して好ましいオーミック接触が得ら
れると共に、接触抵抗の低い電極を提供することにあ
る。Accordingly, the present invention has been made in view of such circumstances, and it is an object of the present invention to provide a stable and favorable ohmic contact with a p-type nitride semiconductor and to reduce contact resistance. It is to provide a low electrode.
【０００８】[0008]
【課題を解決するための手段】本発明の窒化物半導体の
電極は、ｐ型窒化物半導体層表面に、少なくともパラジ
ウム（Ｐｄ）を含む金属が形成され、その上に白金（Ｐ
ｔ）、ルテニウム（Ｒｕ）、ロジウム（Ｒｈ）、オスミ
ウム（Ｏｓ）、イジウム（Ｉｒ）、銀（Ａｇ）よりなる
群から選択された少なくとも一種の金属（窒素と反応し
ない金属。以下、窒素不活性金属と述べる。）、さらに
その上に金（Ａｕ）が形成されたことを特徴とする。In the nitride semiconductor electrode of the present invention, a metal containing at least palladium (Pd) is formed on the surface of a p-type nitride semiconductor layer, and platinum (Pd) is formed thereon.
t), ruthenium (Ru), rhodium (Rh), osmium (Os), iridium (Ir), silver (Ag), at least one metal selected from the group consisting of metals that do not react with nitrogen. It is characterized by forming gold (Au) thereon.
【０００９】[0009]
【００１０】[0010]
【００１１】[0011]
【発明の実施の形態】ｐ型窒化物半導体を得るには、Ｍ
ｇ、Ｚｎ、Ｃｄ等のII族元素よりなるｐ型ドーパントを
窒化物半導体成長中にドープすることによって得られ
る。また成長後、特開平５−１８３１８９号公報に示さ
れる４００℃以上のアニーリング（熱処理）を行うこと
により、さらに低抵抗なｐ型が得られる。窒化物半導体
はＧａＮであると、高キャリア濃度のｐ型層が得られや
すく、電極材料と最も好ましいオーミックが得られ、特
にＭｇをドープしたＧａＮを電極が接する層、即ちコン
タクト層とすることが最も好ましい。なお、ｐ型窒化物
半導体のキャリア濃度は１×１０16／cm3以上あること
が望ましい。DESCRIPTION OF THE PREFERRED EMBODIMENTS In order to obtain a p-type nitride semiconductor, M
It can be obtained by doping a p-type dopant consisting of a group II element such as g, Zn, Cd or the like during the growth of the nitride semiconductor. After growth, annealing (heat treatment) at 400 ° C. or higher as disclosed in JP-A-5-183189 provides a p-type having a lower resistance. When the nitride semiconductor is GaN, a p-type layer with a high carrier concentration can be easily obtained, and the most preferable ohmic with the electrode material can be obtained. Most preferred. Note that the carrier concentration of the p-type nitride semiconductor is desirably 1 × 10 16 / cm 3 or more.
【００１２】本発明の電極において窒素不活性金属と
は、窒素と反応して窒化物半導体、若しくは窒化物の絶
縁体を形成しない金属よりなる電極を指し、例えばＰ
ｔ、Ｒｕ、Ｒｈ、Ｏｓ、Ｉｒ等の白金族元素、Ａｕ、Ａ
ｇ等の貴金属元素が電極材料として好ましい。In the electrode of the present invention, the nitrogen inert metal refers to an electrode made of a nitride semiconductor or a metal which does not form a nitride insulator by reacting with nitrogen.
platinum group elements such as t, Ru, Rh, Os, Ir, Au, A
Noble metal elements such as g are preferable as the electrode material.
【００１３】本発明の電極において、ｐ型窒化物半導体
層表面に形成するＰｄおよび窒素不活性金属の順序は特
に問うものではないが、Ｐｄを窒化物半導体と接する側
とするとより好ましいオーミックが得られる。さらに窒
素不活性金属の中でもＰｔおよびＡｕを使用するとアニ
ーリングに対しても安定な電極が提供できる。In the electrode of the present invention, the order of Pd and the nitrogen-inactive metal formed on the surface of the p-type nitride semiconductor layer is not particularly limited. However, when Pd is in contact with the nitride semiconductor, a more preferable ohmic is obtained. Can be Further, use of Pt and Au among the nitrogen inert metals can provide an electrode that is stable against annealing.
【００１４】[0014]
［実施例１］本発明の電極は、窒素不活性金属と、Ｐｄ
とを組み合わせることによりｐ型窒化物半導体に好まし
いオーミック接触が得られると共に、安定したオーミッ
ク特性の電極が得られる。図１は本発明の一実施例に係
る電極の電流電圧特性Ａと、従来の電極の電流電圧特性
Ｂを比較して示す図である。Ａは、ＰｄとＰｔとＡｕよ
りなる本発明の電極であり、ＢはＰｄとＴｉとを積層し
た従来の電極を示している。これらの電極はｐ型窒化物
半導体の表面に、同一の電極を１ペアづつ形成した後、
ノンアニールの状態でのそれぞれの電極間の電流電圧特
性を示すものである。この図に示すように、本発明の電
極は、従来のＰｄ／Ｔｉを含む電極よりもオーミック特
性が優れている。これは、ｐ型層に接する金属がＴｉよ
りもＰｔの方がオーミック特性が優れていることを示し
ている。さらに、この電極を５００℃でアニーリングし
た際の電流電圧特性を図２に示す。アニーリングによ
り、従来の電極Ｂは電流電圧特性がよくなる傾向にある
が、本発明の電極はほとんど変化しない。これは、本発
明の電極が安定したオーミック特性を保持していること
を示している。なおＢは従来の電極のベストモードを示
すものである。[Example 1] An electrode of the present invention comprises a nitrogen inert metal, Pd
By combining the above, a preferable ohmic contact with the p-type nitride semiconductor can be obtained, and an electrode having stable ohmic characteristics can be obtained. FIG. 1 is a diagram showing a comparison between a current-voltage characteristic A of an electrode according to an embodiment of the present invention and a current-voltage characteristic B of a conventional electrode. A is an electrode of the present invention composed of Pd, Pt, and Au, and B is a conventional electrode in which Pd and Ti are laminated. These electrodes are formed on the surface of a p-type nitride semiconductor by forming the same electrode one pair at a time.
FIG. 9 shows current-voltage characteristics between respective electrodes in a non-annealed state. As shown in this figure, the electrode of the present invention has better ohmic characteristics than the conventional electrode containing Pd / Ti. This indicates that the metal in contact with the p-type layer is better in ohmic characteristics than in Ti when compared to Ti. FIG. 2 shows current-voltage characteristics when the electrode was annealed at 500 ° C. The conventional electrode B tends to have better current-voltage characteristics due to annealing, but the electrode of the present invention hardly changes. This indicates that the electrode of the present invention has stable ohmic characteristics. B indicates the best mode of the conventional electrode.
【００１５】また、ｐ型窒化物半導体を成長させた１０
０枚のウェーハから１０ｍｍ×１０ｍｍ角のチップを２
個づつ取り出し、一方のチップにはＰｄ／Ｐｔ／Ａｕよ
りなる本発明の電極を形成し、もう一方のチップにはＰ
ｄ／Ｔｉよりなる従来の電極を形成した。そして、それ
ぞれ１００個のチップを５００℃でアニーリングした
後、電極を全数検査して電流電圧特性を測定したとこ
ろ、本発明の電極は１００個全てが図２のＡに示すよう
なオーミック特性を示したが、従来のＰｄ／Ｔｉよりな
る電極は、電流−電圧特性は必ずしも安定しておらず、
１５％近くがショットキーバリアに近い特性を示し、好
ましいオーミックが得られていなかった。Further, a p-type nitride semiconductor was grown.
2 x 10mm x 10mm square chips from 0 wafers
The electrodes of the present invention composed of Pd / Pt / Au are formed on one chip and Pd is formed on the other chip.
A conventional electrode of d / Ti was formed. After 100 chips were annealed at 500 ° C., 100% of the electrodes of the present invention exhibited ohmic characteristics as shown in FIG. However, the current-voltage characteristics of the conventional electrode made of Pd / Ti are not always stable.
Nearly 15% exhibited characteristics close to a Schottky barrier, and a favorable ohmic was not obtained.
【００１６】以上のような違いは、次のような作用によ
ると推察される。従来の電極はアニーリングにより、Ｔ
ｉがｐ層の窒素を吸引して、電極直下の窒素空孔を補償
してオーミック性が向上するとされているが、実際には
窒素も水素と同様に電極から抜けてしまうため、キャリ
ア濃度はほとんど変わらないか、減少している。従って
電流電圧特性が安定しないのである。一方、本発明の電
極はＰｄ、Ｐｔ（白金族元素、およびＡｇ）、Ａｕとも
窒化物半導体とは窒化物を生成しないが、これらの金属
を含む電極は、窒化物半導体と非常に好ましいオーミッ
クが得られる。そのため、アニーリングを行っても電極
が変質しないことにより、オーミック性が維持できる。The above difference is presumed to be due to the following operation. Conventional electrodes have a T
It is said that i sucks nitrogen in the p-layer and compensates for nitrogen vacancies immediately below the electrode to improve ohmic properties. However, since nitrogen also escapes from the electrode like hydrogen, the carrier concentration is Almost unchanged or decreasing. Therefore, the current-voltage characteristics are not stable. On the other hand, the electrode of the present invention does not produce nitride with Pd, Pt (platinum group element and Ag), and Au with the nitride semiconductor, but the electrode containing these metals has a very preferable ohmic with the nitride semiconductor. can get. Therefore, the ohmic property can be maintained because the electrodes do not deteriorate even after annealing.
【００１７】［実施例２］図３は窒化物半導体よりなる
レーザ素子の構造を示す模式的な断面図であり、このレ
ーザ素子は、サファイア基板１の上に、ＧａＮよりなる
バッファ層（図示せず）２００オングストローム、Ｓｉ
ドープＧａＮよりなるｎ型コンタクト層２を５μｍ、Ｓ
ｉドープｎ型Ａｌ0.07Ｇａ0.93Ｎよりなるｎ型光閉じこ
め層３を０．１μｍ、Ｓｉドープｎ型ＧａＮよりなるｎ
型光ガイド層４を５００オングストローム、ＩｎＧａＮ
多重量子井戸構造の活性層５を１０００オングストロー
ム、Ｍｇドープｐ型ＧａＮよりなるｐ型光ガイド層６を
５００オングストローム、ＭｇドープＡｌ0.07Ｇａ0.93
Ｎよりなるｐ型光閉じ込め層７を０．５μｍ、Ｍｇドー
プｐ型ＧａＮよりなるｐ型コンタクト層８が０．２μｍ
で積層されており、ｐ型光閉じ込め層７およびｐ型コン
タクト層８がリッジ形状を有している。[Embodiment 2] FIG. 3 is a schematic cross-sectional view showing the structure of a laser device made of a nitride semiconductor. This laser device has a buffer layer made of GaN (shown on the sapphire substrate 1). ) 200 Å, Si
5 μm of n-type contact layer 2 made of doped GaN, S
The n-type optical confinement layer 3 made of i-doped n-type Al0.07Ga0.93N has a thickness of 0.1 μm,
500 Å, InGaN
The active layer 5 having a multiple quantum well structure is 1000 Å, the p-type optical guide layer 6 made of Mg-doped p-type GaN is 500 Å, and Mg-doped Al 0.07 Ga 0.93.
The p-type light confinement layer 7 made of N is 0.5 μm, and the p-type contact layer 8 made of Mg-doped p-type GaN is 0.2 μm.
The p-type light confinement layer 7 and the p-type contact layer 8 have a ridge shape.
【００１８】このレーザ素子のｎ型コンタクト層２には
Ｔｉ／Ａｌよりなるストライプ状の負電極２０を形成
し、ｐ型コンタクト層８のほぼ全面にＰｄを５０オング
ストローム、その上にＰｔを２００オングストローム、
その上にＡｕを０．２μｍの膜厚で形成した後、このレ
ーザ素子をヒートシンクに設置し、パルス発振させたと
ころ、順方向電圧１０Ｖ、閾値電流１００ｍＡで、４１
０ｎｍのレーザ発振を示し、連続して１００時間発振さ
せても、順方向電圧は変化しなかった。さらに、電極を
５００℃でアニーリングしてもその特性は変化しなかっ
た。A striped negative electrode 20 made of Ti / Al is formed on the n-type contact layer 2 of this laser device. Pd is 50 angstrom over substantially the entire surface of the p-type contact layer 8, and Pt is 200 angstrom thereon. ,
After Au was formed thereon with a thickness of 0.2 μm, this laser element was mounted on a heat sink and pulsed. When a forward voltage was 10 V and a threshold current was 100 mA, 41 μm was obtained.
It showed laser oscillation of 0 nm, and the forward voltage did not change even when the laser was oscillated continuously for 100 hours. Furthermore, even if the electrode was annealed at 500 ° C., its characteristics did not change.
【００１９】［実施例３］実施例２において、Ｐｔの代
わりにＲｕを用いる他は同様にしてレーザ素子を作成し
たところ、順方向電圧は１１Ｖに上昇したが、後は実施
例２と同一の特性を示した。Example 3 A laser device was fabricated in the same manner as in Example 2 except that Ru was used instead of Pt, and the forward voltage was increased to 11 V. The characteristics were shown.
【００２０】［実施例４］実施例２において、Ｐｔの代
わりにＲｈを用いる他は同様にしてレーザ素子を作成し
たところ、実施例３の素子とほぼ同一の特性を示した。Example 4 A laser device was fabricated in the same manner as in Example 2 except that Rh was used instead of Pt, and showed almost the same characteristics as the device of Example 3.
【００２１】［実施例５］実施例２において、Ｐｔの代
わりにＯｓを用いる他は同様にしてレーザ素子を作成し
たところ、実施例３の素子とほぼ同一の特性を示した。Example 5 A laser device was fabricated in the same manner as in Example 2 except that Os was used instead of Pt, and showed almost the same characteristics as the device of Example 3.
【００２２】［実施例６］実施例２において、Ｐｔの代
わりにＯｓを用いる他は同様にしてレーザ素子を作成し
たところ、実施例３の素子とほぼ同一の特性を示した。Example 6 A laser device was prepared in the same manner as in Example 2 except that Os was used instead of Pt, and showed substantially the same characteristics as the device of Example 3.
【００２３】［実施例７］実施例２において、Ｐｔの代
わりにＩｒを用いる他は同様にしてレーザ素子を作成し
たところ、実施例３の素子とほぼ同一の特性を示した。Example 7 A laser device was fabricated in the same manner as in Example 2 except that Ir was used instead of Pt, and showed almost the same characteristics as the device of Example 3.
【００２４】［実施例８］実施例２において、Ｐｔの代
わりにＡｇを用いる他は同様にしてレーザ素子を作成し
たところ、実施例３の素子とほぼ同一の特性を示した。Example 8 A laser device was prepared in the same manner as in Example 2 except that Ag was used instead of Pt, and showed almost the same characteristics as the device of Example 3.
【００２５】[0025]
【発明の効果】以上説明したように、本発明の電極はｐ
型窒化物半導体と安定して好ましいオーミックが得ら
れ、しかも変質しにくいという特徴を有している。従っ
て、レーザ素子のように素子自体が発熱するデバイスの
電極とすると、安定した素子を実現することができる。As described above, the electrode of the present invention has a p
It has a characteristic that a preferable ohmic is obtained stably with the type nitride semiconductor, and that it is hardly deteriorated. Therefore, a stable element can be realized by using the electrode of a device that generates heat, such as a laser element.
【図１】 本発明の電極と従来の電極との電流電圧特性
を比較して示す図。FIG. 1 is a diagram showing a comparison between current-voltage characteristics of an electrode of the present invention and a conventional electrode.
【図２】 本発明の電極と従来の電極との電流電圧特性
を比較して示す図。FIG. 2 is a diagram showing a comparison between current-voltage characteristics of an electrode of the present invention and a conventional electrode.
【図３】 本発明の電極が形成された一レーザ素子の構
造を示す模式断面図。FIG. 3 is a schematic cross-sectional view showing a structure of one laser device on which an electrode of the present invention is formed.
１・・・・基板 ２・・・・ｎ型コンタクト層 ３・・・・ｎ型光閉じこめ層 ４・・・・ｎ型光ガイド層 ５・・・・活性層 ６・・・・ｐ型光ガイド層 ７・・・・ｐ型光閉じこめ層 ８・・・・ｐ型コンタクト層 ２０・・・負電極 ３０・・・正電極 DESCRIPTION OF SYMBOLS 1 ... Substrate 2 ... n-type contact layer 3 ... n-type light confinement layer 4 ... n-type light guide layer 5 ... active layer 6 ... p-type light Guide layer 7 p-type optical confinement layer 8 p-type contact layer 20 negative electrode 30 positive electrode
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平９−129932（ＪＰ，Ａ) 特開 平９−64337（ＪＰ，Ａ) 特開 平９−232632（ＪＰ，Ａ) 特開 平９−251966（ＪＰ，Ａ) 特開 平９−129929（ＪＰ，Ａ) 特開 平５−315647（ＪＰ，Ａ) 特開 平７−249795（ＪＰ，Ａ) 特開 平６−152072（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 33/00 H01S 5/00 - 5/50 ──────────────────────────────────────────────────続 き Continuation of front page (56) References JP-A-9-129932 (JP, A) JP-A-9-64337 (JP, A) JP-A-9-232632 (JP, A) JP-A 9-92 251966 (JP, A) JP-A-9-129929 (JP, A) JP-A-5-315647 (JP, A) JP-A-7-249795 (JP, A) JP-A-6-152072 (JP, A) (58) Field surveyed (Int. Cl. 7 , DB name) H01L 33/00 H01S 5/00-5/50
Claims (3)
パラジウム（Ｐｄ）を含む金属が形成され、その上に白
金（Ｐｔ）、ルテニウム（Ｒｕ）、ロジウム（Ｒｈ）、
オスミウム（Ｏｓ）、イジウム（Ｉｒ）、銀（Ａｇ）よ
りなる群から選択された少なくとも一種の金属、さらに
その上に金（Ａｕ）が形成されたことを特徴とする窒化
物半導体の電極。1. A metal containing at least palladium (Pd) is formed on the surface of a p-type nitride semiconductor layer, and platinum (Pt), ruthenium (Ru), rhodium (Rh),
An electrode of a nitride semiconductor, wherein at least one metal selected from the group consisting of osmium (Os), iridium (Ir), and silver (Ag), and further, gold (Au) is formed thereon.
１×１０16／cm3以上であることを特徴とする請求項１
に記載の窒化物半導体の電極。2. The p-type nitride semiconductor according to claim 1, wherein the carrier concentration is 1 × 10 16 / cm 3 or more.
4. The electrode of a nitride semiconductor according to claim 1.
体レーザのｐ型窒化物半導体層の表面に形成されること
を特徴とする請求項１乃至２に記載の窒化物半導体の電
極。3. The nitride semiconductor electrode according to claim 1, wherein the nitride semiconductor electrode is formed on a surface of a p-type nitride semiconductor layer of a nitride semiconductor laser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10254296A JP3233258B2 (en) | 1996-04-24 | 1996-04-24 | Nitride semiconductor electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10254296A JP3233258B2 (en) | 1996-04-24 | 1996-04-24 | Nitride semiconductor electrode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH09293898A JPH09293898A (en) | 1997-11-11 |
| JP3233258B2 true JP3233258B2 (en) | 2001-11-26 |
Family
ID=14330148
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10254296A Expired - Fee Related JP3233258B2 (en) | 1996-04-24 | 1996-04-24 | Nitride semiconductor electrode |
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| Country | Link |
|---|---|
| JP (1) | JP3233258B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7592641B2 (en) | 2005-06-13 | 2009-09-22 | Kabushiki Kaisha Toshiba | Semiconductor device, method for fabricating an electrode, and method for manufacturing a semiconductor device |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3587224B2 (en) * | 1996-07-24 | 2004-11-10 | ソニー株式会社 | Ohmic electrode |
| DE19921987B4 (en) * | 1998-05-13 | 2007-05-16 | Toyoda Gosei Kk | Light-emitting semiconductor device with group III element-nitride compounds |
| US6936859B1 (en) | 1998-05-13 | 2005-08-30 | Toyoda Gosei Co., Ltd. | Light-emitting semiconductor device using group III nitride compound |
| JP2001127370A (en) * | 1999-10-22 | 2001-05-11 | Kyocera Corp | Submount for mounting semiconductor element |
| US6744075B2 (en) | 2001-09-17 | 2004-06-01 | Sanyo Electric Co., Ltd. | Nitride-based semiconductor light-emitting device and method of forming the same |
| JP4952534B2 (en) | 2007-11-20 | 2012-06-13 | 三菱電機株式会社 | Manufacturing method of nitride semiconductor light emitting device |
-
1996
- 1996-04-24 JP JP10254296A patent/JP3233258B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7592641B2 (en) | 2005-06-13 | 2009-09-22 | Kabushiki Kaisha Toshiba | Semiconductor device, method for fabricating an electrode, and method for manufacturing a semiconductor device |
| US7993948B2 (en) | 2005-06-13 | 2011-08-09 | Kabushiki Kaisha Toshiba | Semiconductor device, method for fabricating an electrode, and method for manufacturing a semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH09293898A (en) | 1997-11-11 |
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