JP4947035B2 - Nitride semiconductor device - Google Patents

Description

The present invention is applied to a light emitting element such as an LED (light emitting diode), LD (laser diode), or superluminescent diode (SLD), a light receiving element such as a solar cell or an optical sensor, or an electronic device such as a transistor or a power device. Nitride semiconductor used (In _X Al _Y Ga _1-XY N, 0 ≦ X, 0 ≦ Y, X + Y ≦
It relates to an element using 1). Note that the general formula In _X Ga used in this specification is used.
_1-X N, Al _Y Ga _1-Y N, etc. simply indicate the composition formula of the nitride semiconductor layer, and even if different layers are shown with the same composition formula, for example, the X value of those layers , It does not indicate that the Y values match.

Nitride semiconductors are used as materials for high-brightness blue LEDs and pure green LEDs.
It has just been put into practical use for ED displays and traffic signals. The LED used in these various devices has a single-quantum well structure (SQW) having a well layer made of InGaN or a multiple quantum well structure (MQW).
: Multi-Quantum-Well) has a double heterostructure sandwiched between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer. Blue, green and other wavelengths are InG
It is determined by increasing or decreasing the In composition ratio of the aN well layer.

Also, the applicant has recently used this material at 410 nm at room temperature under pulsed current.
For the first time in the world (for example, Jpn.J.Appl.Phys.35 (1996) L74,
Jpn.J.Appl.Phys.35 (1996) L217 etc.}. This laser element has a double hetero structure having an active layer of a multiple quantum well structure using a well layer made of InGaN, and has a threshold current of 610 mA and a threshold current density of 8 at a pulse width of 2 μs and a pulse period of 2 ms.
. Oscillation at 7 kA / cm ² and 410 nm is exhibited. Furthermore, we presented an improved laser device in Appl. Phys. Lett. 69 (1996) 1477. This laser element has a structure in which a ridge stripe is formed in a part of a p-type nitride semiconductor layer, and has a pulse width of 1 μs, a pulse period of 1 ms, a duty ratio of 0.1%, and a threshold current of 187 mA.
, A threshold current density of 3 kA / cm ² , and an oscillation of 410 nm. And we also succeeded and announced the first continuous oscillation at room temperature. {For example, Nikkei Electronics December 2, 1996, Technical Bulletin, Appl. Phys. Lett. 69 (1996) 3034, Appl. Phys. Lett.
.69 (1996) 4056 etc.}, the laser element has a threshold current density of 3.6 k at 20 ° C.
It exhibits continuous oscillation for 27 hours at A / cm ² , threshold voltage 5.5 V, and 1.5 mW output.

Blue and green LEDs made of a nitride semiconductor have a forward current (If) of 20 mA and a forward voltage (Vf) of 3.4 V to 3.6 V, which is 2 V higher than a red LED made of a GaAlAs semiconductor. Further reduction of Vf is desired. Further, in LD, the current and voltage at the threshold are still high, and in order to oscillate continuously at room temperature for a long time, it is necessary to realize an element with higher efficiency that lowers the threshold current and voltage.

If the threshold voltage of the laser element can be reduced, when the technique is applied to the LED element, a decrease in Vf of the LED element can be expected. Accordingly, an object of the present invention is to realize continuous oscillation for a long time by reducing the current and voltage at the threshold value of an LD element mainly made of a nitride semiconductor.

In the nitride semiconductor device, the crystallinity of the semiconductor layer can be improved by making any one or more semiconductor layers other than the active layer have a strained superlattice structure, and the electrical resistance of the semiconductor layer can be reduced. I found what I could do and completed it.
That is, in the first nitride semiconductor device of the present invention, the active layer has an n conductive side (hereinafter,
It is called n side. ) Nitride semiconductor layer and a p-conductivity side (hereinafter referred to as p-side) nitride semiconductor layer,
In the nitride semiconductor layer on the n conductive side, the first and second nitride semiconductor layers having different bandgap energy and different n-type impurity concentration from each other at a position away from or in contact with the active layer, It is characterized by having an n-side strained superlattice layer formed by laminating.
As a result, the electrical resistance of the nitride semiconductor layer composed of the superlattice layer can be reduced, so that the overall resistance of the nitride semiconductor layer on the n conductive side can be reduced.

The second nitride semiconductor device of the present invention is a nitride semiconductor device in which an active layer is formed between a nitride semiconductor layer on the n conductive side and a nitride semiconductor layer on the p conductive side,
In the nitride semiconductor layer on the p-conductivity side, third and fourth nitride semiconductor layers having different band gap energy and different p-type impurity concentrations from each other at a position away from or in contact with the active layer. The p-side strained superlattice layer is formed by stacking layers.
As a result, the electrical resistance of the nitride semiconductor layer composed of the superlattice layer can be reduced, so that the overall resistance of the nitride semiconductor layer on the p conductive side can be reduced.
Here, the p conductive side refers to a nitride semiconductor layer between the active layer and the positive electrode (p electrode), and the n conductive side refers to a nitride on the opposite side of the p conductive side across the active layer. It shall refer to a semiconductor layer.
Note that the stacking order of the first nitride semiconductor layer and the second nitride semiconductor layer, and the third
Needless to say, the stacking order of the nitride semiconductor layer and the fourth nitride semiconductor layer is not limited.

Furthermore, the third nitride semiconductor device of the present invention is a nitride semiconductor device in which an active layer is formed between a nitride semiconductor layer on the n conductive side and a nitride semiconductor layer on the p conductive side,
In the nitride semiconductor layer on the n conductive side, the first and second nitride semiconductor layers having different bandgap energy and different n-type impurity concentration from each other at a position away from or in contact with the active layer, Having an n-side strained superlattice layer,
In the nitride semiconductor layer on the p-conductivity side, third and fourth nitride semiconductor layers having different band gap energy and different p-type impurity concentrations from each other at a position away from or in contact with the active layer. The p-side strained superlattice layer is formed by stacking layers.
As a result, the electrical resistance of the nitride semiconductor layer composed of the superlattice layer can be reduced, so that the overall resistance of the nitride semiconductor layer on the n-conducting side and the p-conducting side can be reduced.

In the first or third nitride semiconductor element of the present invention, if the n-side strained superlattice layer is a photoelectric conversion element such as a light emitting element or a light receiving element, for example, a buffer layer formed in contact with the substrate, n N-side contact layer on which electrodes are formed, n as carrier confinement
At least one of the side cladding layer and the n-side light guide layer that guides the light emission of the active layer
Formed as seed layer. In the second or third nitride semiconductor device, the p-side strained superlattice layer is a p-side contact layer on which a p-electrode is formed, a p-side cladding layer as carrier confinement, and p that guides light emission of the active layer. It is formed as at least one of the side light guide layers.

In the first and third nitride semiconductor devices of the present invention, the impurity concentration of the first nitride semiconductor layer having a large band gap energy in the superlattice layer is set to the impurity concentration of the second nitride semiconductor layer having a small band gap energy. Compared to, it may be larger or smaller.
When the impurity concentration of the first nitride semiconductor layer is increased as compared with the impurity concentration of the second nitride semiconductor layer, the carrier has a large band gap energy.
Can be injected into the second nitride semiconductor layer having a low bandgap energy, and the injected carriers are moved in the second nitride semiconductor layer having a low impurity concentration and a high mobility. Therefore, the electrical resistance of the superlattice layer can be reduced.
Here, in the present specification, when the n-side strained superlattice layer and the p-side strained superlattice layer are collectively referred to, they are simply referred to as a superlattice layer as described above.

Further, when the impurity concentration of the first nitride semiconductor layer is made larger than the impurity concentration of the second nitride semiconductor layer, the first nitride of the superlattice layer is used in the first nitride semiconductor element. In the semiconductor layer, the n-type or p-type impurity concentration in the portion adjacent to the second nitride semiconductor layer (hereinafter referred to as the adjacent portion) is made smaller than that in the portion away from the second nitride semiconductor layer. It is preferable. As a result, carriers moving in the second nitride semiconductor layer can be prevented from being scattered by the impurities in the adjacent portion, and the mobility of the second nitride semiconductor layer can be further increased. The electric resistance can be further reduced.

Specifically, in the first and third nitride semiconductor elements, when the first nitride semiconductor layer having a large band gap energy is doped with a large amount of n-type impurities, the n-type impurities in the first nitride semiconductor layer The concentration is in the range of 1 × 10 ¹⁷ / cm ³ to 1 × 10 ²⁰ / cm ³ , the n-type impurity concentration of the second nitride semiconductor layer is smaller than that of the first nitride semiconductor layer, and 1 × 10 ¹⁹ / Cm ³ or less is preferable. The n-type impurity concentration of the second nitride semiconductor layer having a small band gap energy is 1 × 1.
It is more preferably 0 ¹⁸ / cm ³ or less, and more preferably 1 × 10 ¹⁷ / cm ³ or less. That is, from the viewpoint of increasing the mobility of the second nitride semiconductor layer, the n-type impurity concentration of the second nitride semiconductor layer is preferably as small as possible, and the second nitride semiconductor layer is undoped. Most desirable is a layer, ie, a state that is not intentionally doped with impurities.

Further, when the impurity concentration of the first nitride semiconductor layer is made lower than the impurity concentration of the second nitride semiconductor layer, the first nitride semiconductor layer in the second nitride semiconductor layer It is preferable to make the n-type impurity concentration in the portion adjacent to the region smaller than that in the portion away from the first nitride semiconductor layer.
Further, when the impurity concentration of the first nitride semiconductor layer is made lower than the impurity concentration of the second nitride semiconductor layer, the n-type impurity concentration of the first nitride semiconductor layer is 1 × 10 ^19. / cm ³ or less, it is preferable n-type impurity concentration of the second nitride semiconductor layer is in the range of ^{1 × 10 17 / cm 3 ~1} × 10 20 / cm 3.
The first nitride semiconductor layer is preferably 1 × 10 ¹⁸ / cm ³ or less, more preferably 1 × 10 ¹⁷ / cm ³ or less, and most preferably undoped.
ope), that is, a state in which impurities are not intentionally doped is most desirable.

In the first and third nitride semiconductor elements, in order to form a superlattice layer with good crystallinity in the superlattice layer, the first nitride semiconductor layer has a relatively large energy band gap and a crystal structure. Al _Y Ga that can grow a good layer
In _X Ga formed of _1-YN (0 <Y <1) and capable of growing the second nitride semiconductor layer with a relatively small energy band gap and good crystallinity.
It is preferable to form with _1- XN (0 ≦ X <1).

In the first and third nitride semiconductor elements, it is more preferable that in the superlattice layer, the second nitride semiconductor layer is made of GaN. Accordingly, the first nitride semiconductor layer (Al _Y Ga _1-Y N) and the second nitride semiconductor layer (G
aN) can be grown in the same atmosphere, which is very advantageous for the production of superlattice layers.

Further, in the first and third nitride semiconductor elements, in the superlattice layer, the first nitride semiconductor layer is formed of Al _X Ga _1-X N (0 <X <1), and the second nitride semiconductor element The nitride semiconductor layer can also be formed of Al _Y Ga _1-Y N (0 <Y <1, X> Y).

Further, it is more preferable that the first nitride semiconductor layer or the second nitride semiconductor layer is not doped with an n-type impurity.

In the second and third nitride semiconductor devices of the present invention, the impurity concentration of the third nitride semiconductor layer having a large band gap energy in the superlattice layer is set to the impurity concentration of the fourth nitride semiconductor layer having a small band gap energy. Compared to, it may be larger or smaller.
When the impurity concentration of the third nitride semiconductor layer is increased as compared with the impurity concentration of the fourth nitride semiconductor layer, the third carrier having a large band gap energy is used.
Can be injected into the fourth nitride semiconductor layer having a low bandgap energy, and the injected carriers are moved by the fourth nitride semiconductor layer having a low impurity concentration and a high mobility. Therefore, the electrical resistance of the superlattice layer can be reduced.

In the second and third nitride semiconductor elements, when the impurity concentration of the third nitride semiconductor layer is made larger than the impurity concentration of the fourth nitride semiconductor layer, the first of the superlattice layers Portion of the nitride semiconductor layer adjacent to the fourth nitride semiconductor layer (
Hereinafter, it is referred to as a proximity portion. It is preferable that the p-type impurity concentration is reduced as compared with the portion away from the fourth nitride semiconductor layer. As a result, carriers moving in the fourth nitride semiconductor layer can be prevented from being scattered by the impurities in the adjacent portion, the mobility of the fourth nitride semiconductor layer can be further increased, and the superlattice layer The electric resistance can be further reduced.

Further, in the second and third nitride semiconductor elements, when the impurity concentration of the third nitride semiconductor layer is made larger than the impurity concentration of the fourth nitride semiconductor layer, the band gap energy is large. The nitride semiconductor layer 3 has a p-type impurity concentration of 1 ×
10 ¹⁸ / cm ³ to 1 × 10 ²¹ / cm ³ , and p of the fourth nitride semiconductor layer
The type impurity concentration is smaller than the impurity concentration of the third nitride semiconductor layer and 1 × 10 ²
More preferably, it is set to ⁰ / cm ³ or less. The fourth nitride semiconductor layer having a small band gap energy is more preferably 1 × 10 ¹⁹ / cm ³ or less, and further preferably 1 × 10 ¹⁸ / cm ³ or less. That is, from the viewpoint of increasing the mobility of the fourth nitride semiconductor layer, the p-type impurity concentration of the fourth nitride semiconductor layer is preferably as small as possible. Most desirably, the impurity is not intentionally doped.

In the second and third nitride semiconductor elements, when the impurity concentration of the third nitride semiconductor layer is made smaller than the impurity concentration of the fourth nitride semiconductor layer,
In the fourth nitride semiconductor layer, it is preferable that a p-type impurity concentration in a portion adjacent to the third nitride semiconductor layer is made smaller than that in a portion away from the third nitride semiconductor layer.

In the second and third nitride semiconductor elements, when the impurity concentration of the third nitride semiconductor layer is made smaller than the impurity concentration of the fourth nitride semiconductor layer,
The p-type impurity concentration of the third nitride semiconductor layer is 1 × 10 ²⁰ / cm ³ or less;
The p-type impurity concentration of the fourth nitride semiconductor layer is 1 × 10 ¹⁸ / cm ³ to 1 × 10 ²¹ /
A range of cm ³ is preferred.
The third nitride semiconductor layer is 1 × 10 ¹⁹ / cm ³ or less, more preferably 1 × 10 ¹⁸ / cm ³ or less, most preferably undoped,
That is, it is most desirable that the impurity is not intentionally doped.

In the second and third nitride semiconductor elements, in order to form a superlattice layer with good crystallinity, the third nitride semiconductor layer is made of a layer having a relatively large energy band gap and good crystallinity. Al _Y Ga _1-Y N (0 <
Formed by Y <1), the fourth nitride semiconductor layer _{In X Ga 1-X N (} 0 ≦ X <1
). More preferably, the fourth nitride semiconductor layer is made of GaN. As a result, the third nitride semiconductor layer (Al _Y Ga _1
-YN ) and the fourth nitride semiconductor layer (GaN) can be grown in the same atmosphere, which is extremely advantageous in manufacturing the superlattice layer.

In the second and third nitride semiconductor elements, the third nitride semiconductor layer is formed of Al _X Ga _1-X N (0 <X <1), and the fourth nitride semiconductor layer is A
l _Y Ga _1-Y N (0 <Y <1, X> Y) may be used.

In the second and third nitride semiconductor elements, it is preferable that the third nitride semiconductor layer or the fourth nitride semiconductor layer is not doped with a p-type impurity.

In the third nitride semiconductor element, in the n-side strained superlattice layer, a band gap energy of the first nitride semiconductor layer is larger than a band gap energy of the second nitride semiconductor layer, and the first nitride semiconductor layer The n-type impurity concentration of the nitride semiconductor layer is higher than the n-type impurity concentration of the second nitride semiconductor layer, and
In the p-side strained superlattice layer, a band gap energy of the third nitride semiconductor layer is larger than a band gap energy of the fourth nitride semiconductor layer, and a p-type impurity of the third nitride semiconductor layer The concentration can be set higher than the p-type impurity concentration of the fourth nitride semiconductor layer.
In this case, the n-type impurity concentration of the first nitride semiconductor layer is 1 × 10 ¹⁷ / cm ^3.
The n-type impurity concentration of the second nitride semiconductor layer is 1 × 10 ¹⁹ / cm ³ or less in a range of ˜1 × 10 ²⁰ / cm ³ , and
The p-type impurity concentration of the third nitride semiconductor layer is 1 × 10 ¹⁸ / cm ³ to 1 × 10.
^{21 /} cm in the range of ^3, the fourth 1 p-type impurity concentration of the nitride semiconductor layer ×
It is preferably 10 ²⁰ / cm ³ or less.

In the third nitride semiconductor device, in the n-side strained superlattice layer, the first nitride semiconductor layer has a bandgap energy larger than that of the second nitride semiconductor layer and the second nitride. An n-type impurity concentration greater than that of the semiconductor layer, and in the p-side strained superlattice layer, the third nitride semiconductor layer has a bandgap energy greater than that of the fourth nitride semiconductor layer. The p-type impurity concentration may be lower than that of the fourth nitride semiconductor layer.
In this case, the n-type impurity concentration of the first nitride semiconductor layer is 1 × 10 ¹⁷ / cm ^3.
The n-type impurity concentration of the second nitride semiconductor layer is 1 × 10 ¹⁹ / cm ³ or less in a range of ˜1 × 10 ²⁰ / cm ³ , and
The p-type impurity concentration of the third nitride semiconductor layer is 1 × 10 ²⁰ / cm ³ or less, and the p-type impurity concentration of the fourth nitride semiconductor layer is 1 × 10 ¹⁸ / cm ³ to 1 × 10 ^21.
It is preferably in the range of / cm ³ .

In the third nitride semiconductor device, in the n-side strained superlattice layer, the first nitride semiconductor layer has a bandgap energy larger than that of the second nitride semiconductor layer and the second nitride. N-type impurity concentration smaller than the semiconductor layer, and
In the p-side strained superlattice layer, the third nitride semiconductor layer has a band gap energy larger than that of the fourth nitride semiconductor layer and a p-type impurity concentration larger than that of the fourth nitride semiconductor layer. Can be set as follows.
In this case, the n-type impurity concentration of the first nitride semiconductor layer is 1 × 10 ¹⁹ / cm ^3.
The n-type impurity concentration of the second nitride semiconductor layer is 1 × 10 ¹⁷ / cm
³ to 1 × 10 ²⁰ / cm ³ , and the p-type impurity concentration of the third nitride semiconductor layer is 1 × 10 ¹⁸ / cm ³ to 1 × 10 ²¹ / cm ³ , The fourth
The nitride semiconductor layer preferably has a p-type impurity concentration of 1 × 10 ²⁰ / cm ³ or less.

Furthermore, in the third nitride semiconductor device, in the n-side strained superlattice layer, the first nitride semiconductor layer has a band gap energy larger than that of the second nitride semiconductor layer and the second nitride. N-type impurity concentration smaller than the semiconductor layer, and
In the p-side strained superlattice layer, the third nitride semiconductor layer has a band gap energy larger than that of the fourth nitride semiconductor layer and a p-type impurity concentration smaller than that of the fourth nitride semiconductor layer. Can be set as follows.
In this case, the n-type impurity concentration of the first nitride semiconductor layer is 1 × 10 ¹⁹ / cm ^3.
The n-type impurity concentration of the second nitride semiconductor layer is 1 × 10 ¹⁷ / cm
³ to 1 × 10 ²⁰ / cm ³ , the p-type impurity concentration of the third nitride semiconductor layer is 1 × 10 ²⁰ / cm ³ or less, and the p-type impurity of the fourth nitride semiconductor layer The impurity concentration is preferably in the range of 1 × 10 ¹⁸ / cm ³ to 1 × 10 ²¹ / cm ³ .

In the third nitride semiconductor element, in the n-side strained superlattice layer, the first nitride semiconductor layer is formed of Al _Y Ga _1-Y N (0 <Y <1), and the second nitride semiconductor layer is formed. The physical semiconductor layer is formed of In _X Ga _1-X N (0 ≦ X <1), and
In the p-side strained superlattice layer, the third nitride semiconductor layer is made of Al _Y Ga _{1−
Y 4} N (0 <Y <1), and the fourth nitride semiconductor layer is In _X Ga _1-X N
(0 ≦ X <1).
Further, it is preferable that each of the second and fourth nitride semiconductor elements is made of GaN.

In the third nitride semiconductor element, in the n-side strained superlattice layer, the first nitride semiconductor layer is formed of Al _X Ga _1-X N (0 <X <1), and the second nitride semiconductor layer is formed. The physical semiconductor layer is formed of Al _Y Ga _1-Y N (0 <Y <1, X> Y),
In the p-side strained superlattice layer, the third nitride semiconductor layer is made of Al _X Ga _1−
X N (0 <X <1), and the fourth nitride semiconductor layer is Al _Y Ga _1-Y N
(0 <Y <1, X> Y).

Furthermore, in the third nitride semiconductor element, the first nitride semiconductor layer or the second nitride semiconductor layer is preferably an undoped layer that is not doped with an n-type impurity. The nitride semiconductor layer or the fourth nitride semiconductor layer is p
An undoped layer that is not doped with type impurities is preferred.

In the first, second, and third nitride semiconductor elements, the active layer preferably includes an InGaN layer, and the InGaN layer is more preferably a quantum well layer. The active layer may have a single quantum well structure or a multiple quantum well structure.

The nitride semiconductor device according to one aspect of the present invention is a laser oscillation device in which the active layer is located between the p-side cladding layer and the n-side cladding layer,
At least one of the p-side cladding layer and the n-side cladding layer is the n-side cladding layer.
A side-strained superlattice layer or the p-side strained superlattice layer. Thereby, a laser oscillation element having a low threshold current can be configured.

In the laser oscillation element, at least one of the p-side cladding layer and the active layer or at least one of the p-side cladding layer and the active layer is made of In-containing nitride semiconductor or GaN, and has an impurity concentration. It is preferable that a light guide layer having a thickness of 1 × 10 ¹⁹ / cm ³ or less is formed. Since this light guide layer has a low absorptance of light generated in the active layer, it is possible to realize a laser element that can oscillate with low gain with little extinction of light emission of the active layer. In the present invention, in order to reduce the light absorptance, the impurity concentration of the light guide layer is more preferably 1 × 10 ¹⁸ / cm ³ or less, and 1 × 1.
It is more preferably 0 ¹⁷ / cm ³ or less, and most preferably undoped. The light guide layer may have a superlattice structure.

Furthermore, a cap made of a nitride semiconductor having a film thickness of 0.1 μm or less having a band gap energy larger than that of the well layer of the active layer and the light guide layer between the light guide layer and the active layer. A layer is preferably formed, and the impurity concentration of the cap layer is preferably set to 1 × 10 ¹⁸ / cm ³ or more. Thus, the leakage current can be reduced by forming the cap layer having a large band gap energy. It is more effective if the light guide layer and the cap layer are formed on the p-conductivity-side nitride semiconductor layer side.

In the present invention, the first to third nitride semiconductor elements grow a nitride semiconductor layer on a heterogeneous substrate made of a material different from the nitride semiconductor, and on the grown nitride semiconductor layer, A nitride semiconductor substrate made of a nitride semiconductor grown so as to cover the protective film from the exposed nitride semiconductor layer after forming a protective film to partially expose the surface of the nitride semiconductor layer It is preferable to form on top. Thus, each layer of the first to third nitride semiconductor elements can be formed with good crystallinity, and thus a nitride semiconductor element having excellent characteristics can be formed.
In the present invention, the heterogeneous substrate and the protective film may be removed before or after element growth, leaving the nitride semiconductor layer on which the nitride semiconductor element is formed (or to be formed) as the substrate.

As described above, since the present invention has a cladding layer made of a superlattice layer in which impurities are modulation-doped, a laser element that can continuously oscillate for a long time with a reduced threshold voltage can be realized. . Further, this laser element can realize a good laser element having a high characteristic temperature. Characteristic temperature is the threshold current density due to temperature change.
Proportional to exp (T / T ₀ ) {T: Operating temperature (K), T ₀ : Characteristic temperature (K)}.
As T ₀ is larger, the LD has a lower threshold current density even at a high temperature, indicating that the LD operates stably. For example, in the laser element of Example 1 of the present invention, T ₀ is 150K or more. This value indicates that the temperature characteristic of the LD is very excellent. Therefore, by using the laser element of the present invention as a writing light source and a reading light source, unprecedented capacity can be achieved, and its industrial utility value is very large.

FIG. 1 is a schematic cross-sectional view showing the structure of a nitride semiconductor device according to an embodiment of the present invention. The nitride semiconductor device of this embodiment is an electrode stripe type laser device having an active layer end face as a resonance surface (henceforth simply referred to as the laser device of the embodiment hereinafter).
FIG. 1 schematically shows a cross section when the element is cut in a direction perpendicular to the resonance direction of the laser beam. Hereinafter, an embodiment of the present invention will be described with reference to FIG.

First, in FIG. 1, each code | symbol shows the following.
Reference numeral 10 denotes a GaN substrate having a thickness of, for example, 10 μm or more grown on a heterogeneous substrate made of a material different from the nitride semiconductor, for example, a substrate made of a material such as sapphire, spinel, SiC, Si, GaAs, or ZnO. The heterogeneous substrate may be removed after the GaN substrate 10 is formed as shown in FIG. 1, or may be used without being removed as shown in the examples described later (FIG. 4).
Reference numeral 11 denotes a buffer layer made of Si-doped n-type GaN and an n-side contact layer.
12 is located away from the active layer, for example, S having a film thickness of 40 angstroms.
i-doped n-type Al _0.2 Ga _0.8 N (first nitride semiconductor layer) and 40 Å thick undoped GaN layer (second nitride semiconductor layer)
And n-side cladding layers having a superlattice structure in which 100 layers are alternately stacked.
13 is between the n-side cladding layer 12 and the active layer 14, and the n-side cladding layer 1
Having a band gap energy less than 2 Al _0.2 Ga _0.8 N,
For example, an n-side guide layer made of undoped GaN is shown.
14 is composed of three well layers of In _0.2 Ga _0.8 N with a thickness of 30 Å and In _0.05 Ga _0.95 N with a thickness of 30 Å having a larger band gap energy than the well layer. An active layer having a multiple quantum well structure in which a total of five barrier layers and two barrier layers are alternately stacked is shown.
15 is larger than the band gap energy of the well layer of the active layer 14, and larger than the band gap energy of the p-side light guide layer 16, for example, Mg doped p
A p-side cap layer made of type Al _0.3 Ga _0.7 N is shown. The band gap energy of the p-side cap layer 15 is preferably a superlattice p-side cladding layer 1.
7 is made larger than the nitride semiconductor layer (fourth nitride semiconductor layer) having the smaller band gap energy.
16 is between the p-side cladding layer 17 and the active layer 14, and the p-side cladding layer 1
Having a band gap energy smaller than 7 Al _0.2 Ga _0.8 N,
For example, a p-side guide layer made of undoped GaN is shown.
17 is located away from the active layer, for example, M having a film thickness of 40 Å.
1 shows a p-side cladding layer having a superlattice structure in which 100 layers of g-doped p-type Al _0.2 Ga _0.8 N and 40 Å thick undoped GaN layers are alternately stacked.
18 denotes a p-side contact layer made of, for example, Mg-doped GaN having a band gap energy smaller than that of Al _0.2 Ga _0.8 N of the p-side cladding layer 17.

As described above, the laser device according to the embodiment of the present invention has a structure in which the above-described nitride semiconductor layers 11 to 18 are stacked on the GaN substrate 10, and the p-side cladding layer 17.
The nitride semiconductor layer above is formed with a stripe ridge, and p located on the ridge outermost surface
A p-electrode 21 is formed on almost the entire surface of the side contact layer 18. On the other hand, an n electrode 23 is formed on the surface of the n-side buffer layer 11 exposed by etching from above the nitride semiconductor layer. In the present embodiment, the n-electrode 23 is the n-side buffer layer 11.
Since the GaN substrate 10 is used as the substrate, n
The portion where the electrode is to be formed is etched to the GaN substrate 10 to expose the surface of the GaN substrate 10, the n electrode is formed on the exposed surface of the GaN substrate 10, and the p electrode and the n electrode are provided on the same surface side. It can also be a structure. Further, an insulating film 25 made of, for example, SiO ₂ is provided on the surface of the nitride semiconductor exposed between the n electrode 23 and the p electrode 21, and p is used for bonding through a window portion of the insulating film 25. A pad electrode 22 and an n pad electrode 24 are provided. As described above, in this specification, the nitride semiconductor layer between the active layer and the p-electrode is generally referred to as a p-side nitride semiconductor layer regardless of the conductivity type of the nitride semiconductor layer. The nitride semiconductor layer between the active layer and the GaN substrate 10 is generally referred to as an n-side nitride semiconductor layer.

In the laser device according to the embodiment of the present invention, in the n-side nitride semiconductor layer below the active layer 14 shown in FIG. A layer and a second nitride semiconductor layer having a lower band gap energy than the first nitride semiconductor layer are stacked, and an n-side cladding layer 12 having a superlattice structure having different impurity concentrations is provided. The thicknesses of the first nitride semiconductor layer and the second nitride semiconductor layer constituting the superlattice layer are 100 angstroms or less, more preferably 70 angstroms or less, and most preferably 10 to 40.
Adjust to angstrom thickness. If it is thicker than 100 angstroms, the first nitride semiconductor layer and the second nitride semiconductor layer have a film thickness exceeding the elastic strain limit, and there is a tendency for minute cracks or crystal defects to easily enter the film. In the present invention, the lower limit of the film thickness of the first nitride semiconductor layer and the second nitride semiconductor layer is not particularly limited and may be one atomic layer or more, but most preferably 10 angstroms or more as described above. . Further, it is desirable that the first nitride semiconductor layer grows a nitride semiconductor containing at least Al, preferably Al _X Ga _1-X N (0 <X ≦ 1). On the other hand, the second nitride semiconductor may be any nitride semiconductor having a smaller band gap energy than the first nitride semiconductor, but preferably Al _Y G
2 such as a _1-Y N (0 ≦ Y <1, X> Y), In _Z Ga _1-Z N (0 ≦ Z <1)
Elemental mixed crystal and ternary mixed crystal nitride semiconductors are easy to grow and those with good crystallinity are easily obtained. Among them, the first nitride semiconductor is particularly preferably Al _X Ga _1-X N (0 <X <1) containing no In or Ga, and the second nitride semiconductor is In _Z Ga ₁₋ containing no Al. _Z N (0 ≦ Z <1), and for the purpose of obtaining a superlattice excellent in crystallinity, Al _X Ga _1-X N (0 <X ≦ 0) having an Al mixed crystal ratio (Y value) of 0.3 or less .3
) And GaN are most preferable.

In addition, when the first nitride semiconductor is formed using Al _X Ga _1-X N (0 <X <1) and the second nitride semiconductor is formed using GaN, the following manufacturing process is performed. Has excellent advantages. That is, Al by metal organic gas layer growth method (MOCVD)
_X Ga _1-X N in the formation of (0 <X <1) layer and the GaN layer can be any layer grown in the same atmosphere of _{H 2.} Accordingly, the superlattice layer can be formed by alternately growing the Al _X Ga _1-X N (0 <X <1) layer and the GaN layer without changing the atmosphere. This is a great advantage in manufacturing a superlattice layer that needs to be formed by laminating several tens to several hundred layers.

When forming a clad layer as an optical confinement layer and a carrier confinement layer, it is necessary to grow a nitride semiconductor having a larger band gap energy than the well layer of the active layer. A nitride semiconductor layer having a large band gap energy is A, that is, A
It is a nitride semiconductor with a high l mixed crystal ratio. Conventionally, when a nitride semiconductor having a high Al mixed crystal ratio is grown as a thick film, cracks are easily generated, and thus crystal growth is very difficult. However, when the superlattice layer is formed as in the present invention, the first structure constituting the superlattice layer is used.
Even if the AlGaN layer as the nitride semiconductor layer is made a layer having a slightly higher Al mixed crystal ratio, it is grown with a film thickness equal to or less than the critical elastic film thickness, so that it is difficult for cracks to occur. for that reason,
In the present invention, since a layer having a high Al mixed crystal ratio can be grown with good crystallinity, a clad layer having a high light confinement effect and a carrier confinement effect can be formed. ) Can be reduced.

Further, in the laser element according to the embodiment of the present invention, the n-side cladding layer 12
The first nitride semiconductor layer and the second nitride semiconductor layer are set to have different n-type impurity concentrations. This is so-called modulation doping, in which the n-type impurity concentration of one layer is low, preferably no impurity is doped (undoped)
If the other layer is doped at a high concentration, the threshold voltage, Vf, etc. can be lowered. This is because when a layer having a low impurity concentration is present in the superlattice layer, the mobility of the layer is increased, and a layer having a high impurity concentration is also present at the same time, so that the superlattice remains at a high carrier concentration. By being able to form a layer. In other words, a layer having a high impurity concentration and a high mobility and a layer having a high impurity concentration and a high carrier concentration are present at the same time. It is assumed that Vf decreases.

When a nitride semiconductor layer having a large band gap energy is doped with a high concentration of impurities, this modulation doping generates a two-dimensional electron gas between the high impurity concentration layer and the low impurity concentration layer. It is presumed that the resistivity decreases due to the influence. For example, in a superlattice layer in which a nitride semiconductor layer having a large band gap doped with an n-type impurity and an undoped nitride semiconductor layer having a small band gap are stacked, a layer doped with an n-type impurity and an undoped layer At the heterojunction interface with
The barrier layer side is depleted, and electrons (two-dimensional electron gas) accumulate at the interface around the thickness of the layer side having a small band gap. Since the two-dimensional electron gas can be generated on the side having a small band gap, the electrons are not scattered by impurities when they travel, so that the mobility of electrons in the superlattice increases and the resistivity decreases. It is presumed that the modulation doping on the p side is also influenced by the two-dimensional hole gas. In the case of the p layer, AlGaN is GaN.
Higher resistivity than Therefore, since the resistivity is lowered by doping a large amount of p-type impurities into AlGaN, the substantial resistivity of the superlattice layer is lowered. Therefore, when an element is manufactured, the threshold tends to be lowered. Inferred.

On the other hand, it is presumed that when the nitride semiconductor layer having a small band gap energy is doped with an impurity at a high concentration, the following effects are obtained. For example, when the AlGaN layer and the GaN layer are doped with the same amount of Mg, the AlGaN layer has a large Mg acceptor level depth and a low activation rate. On the other hand, the acceptor level of the GaN layer is shallower than the AlGaN layer, and the activation rate of Mg is high. For example, Mg is 1 × 1
Even with 0 ²⁰ / cm ³ doping, GaN has a carrier concentration of about 1 × 10 ¹⁸ / cm ³ , whereas AlGaN can obtain only a carrier concentration of about 1 × 10 ¹⁷ / cm ³ . Therefore, in the present invention, a superlattice with a high carrier concentration can be obtained by forming a superlattice with AlGaN / GaN and doping more impurities into the GaN layer that can obtain a high carrier concentration. In addition, since the superlattice is used, carriers move through the AlGaN layer having a low impurity concentration due to the tunnel effect, so that the carriers are not substantially affected by the AlGaN layer, and the AlGaN layer functions as a cladding layer having a high band gap energy. Therefore, even if the nitride semiconductor layer having the smaller band gap energy is doped with a large amount of impurities, it is very effective in reducing the threshold values of the laser element and the LED element. Although this description has been given of an example in which a superlattice is formed on the p-type layer side, the same effect can be obtained when a superlattice is formed on the n-layer side.

In the case where the first nitride semiconductor layer having a large band gap energy is doped with a large amount of n-type impurities, a preferable doping amount to the first nitride semiconductor layer is 1 × 1.
0 ¹⁷ / cm ³ to 1 × 10 ²⁰ / cm ³ , more preferably 1 × 10 ¹⁸ / cm ^{3 to} 5
It adjusts in the range of * 10 < ¹⁹ > / cm < ³ >. If it is less than 1 × 10 ¹⁷ / cm ³ , the second
The difference from the nitride semiconductor layer tends to be small, and a layer having a high carrier concentration tends to be difficult to obtain, and if it exceeds 1 × 10 ²⁰ / cm ³ , the leakage current of the device tends to increase. is there. On the other hand, the n-type impurity concentration of the second nitride semiconductor layer should be less than that of the first nitride semiconductor layer, and preferably 1/10 or less. Most preferably, when undoped, a layer with the highest mobility is obtained, but since the film thickness is thin, there is an n-type impurity diffused from the first nitride semiconductor side,
The amount is desirably 1 × 10 ¹⁹ / cm ³ or less. As n-type impurities, Si, Ge,
Select Group IVB and VIB elements of the periodic table such as Se, S, O, etc., preferably Si, G
e and S are n-type impurities. This effect is the same when the first nitride semiconductor layer having a large band gap energy is doped with a small amount of n-type impurities and the second nitride semiconductor layer having a small band gap energy is doped with a large amount of n-type impurities. is there.

In the laser device according to the embodiment of the present invention, a third bandgap energy having a large bandgap energy is located in the p-side nitride semiconductor layer above the active layer 14 shown in FIG. A p-side cladding layer 17 having a superlattice structure in which a nitride semiconductor layer and a fourth nitride semiconductor layer having a bandgap energy smaller than that of the third nitride semiconductor layer are stacked, and the impurity concentrations thereof are different from each other. Have. This p
The film thicknesses of the third and fourth nitride semiconductor layers constituting the superlattice layer of the side cladding layer 17 are also as follows:
As with the n-side cladding layer 12, the film thickness is adjusted to 100 angstroms or less, more preferably 70 angstroms or less, and most preferably 10 to 40 angstroms. Similarly, the third nitride semiconductor layer preferably grows a nitride semiconductor containing at least Al, preferably Al _X Ga _1-X N (0 <X ≦ 1), and the fourth nitride semiconductor is preferably Is Al _Y Ga _1-Y N (0 ≦ Y <1, X> Y),
In _Z Ga _1-Z N 2 mixed crystal such as (0 ≦ Z ≦ 1), it is desirable to grow the nitride semiconductor ternary mixed crystal.

When the p-side cladding layer 17 has a superlattice structure, the action of the superlattice structure on the laser element is the same as that of the n-side cladding layer 12, but in addition to the case where it is formed on the n-layer side, There is an effect. That is, the resistivity of the p-type nitride semiconductor is usually two orders of magnitude higher than that of the n-type nitride semiconductor. Therefore, by forming the superlattice layer on the p-layer side, the effect of lowering the threshold voltage appears significantly. More specifically, it is known that a nitride semiconductor is a semiconductor in which p-type crystals are very difficult to obtain. A technique for removing hydrogen by annealing a nitride semiconductor layer doped with a p-type impurity to obtain a p-type crystal is known (Japanese Patent No. 2540791). However, even if p-type is obtained, the resistivity is several Ω · cm or more. Therefore, by making this p-type layer a superlattice layer, the crystallinity is improved and the resistivity is lowered by one digit or more, so that the threshold voltage can be lowered.

The third nitride semiconductor layer and the fourth nitride semiconductor layer of the p-side cladding layer 17 are different in p-type impurity concentration, the impurity concentration of one layer is increased, and the impurity concentration of the other layer is decreased. Similar to the n-side cladding layer 12, the p-type impurity concentration in the third nitride semiconductor layer having a larger band gap energy is increased, and the fourth p-type impurity concentration in the lower band gap energy is decreased. When undoped, the threshold voltage, Vf, and the like can be reduced.
The reverse configuration is also possible. That is, the p-type impurity concentration of the third nitride semiconductor layer having a large band gap energy may be decreased, and the p-type impurity concentration of the fourth nitride semiconductor layer having a small band gap energy may be increased. The reason is as described above.

As a preferable doping amount to the third nitride semiconductor layer, 1 × 10 ¹⁸ / cm ³ to 1
× 10 ²¹ / cm ³ , more preferably 1 × 10 ¹⁹ / cm ^{3 to} 5 × 10 ²⁰ / cm ³
Adjust to the range. If it is less than 1 × 10 ¹⁸ / cm ³ , the difference from the fourth nitride semiconductor layer is similarly reduced, and a layer having a high carrier concentration tends to be difficult to obtain, and 1 × 10 ²¹ / When it is more than cm ³ , the crystallinity tends to deteriorate. On the other hand, the p-type impurity concentration of the fourth nitride semiconductor layer should be less than that of the third nitride semiconductor layer, and preferably 1/10 or less. In order to obtain a layer with the highest mobility, it is most preferable to use undoped. Actually, since the film thickness is small, it is considered that there is a p-type impurity diffused from the third nitride semiconductor side. However, in order to obtain a good result in the present invention, the amount is 1 × 10 ²⁰ / cm
³ or less is desirable.
As the p-type impurity, elements of Group IIA and IIB of the periodic table such as Mg, Zn, Ca, and Be are selected, and Mg, Ca, and the like are preferably used as the p-type impurity. This effect is the same when the third nitride semiconductor layer having a large band gap energy is doped with a small amount of p-type impurities and the fourth nitride semiconductor layer having a small band gap energy is doped with a large amount of p-type impurities. is there.

Furthermore, in the nitride semiconductor layer constituting the superlattice, the layer in which the impurity is doped at a high concentration is the center of the semiconductor layer (the second nitride semiconductor layer or the fourth nitride semiconductor) in the thickness direction. The impurity concentration in a position far from the layer) is high, and the impurity concentration in the vicinity of both ends (the portion adjacent to the second nitride semiconductor layer or the fourth nitride semiconductor layer) is low (preferably undoped). It is desirable. More specifically, for example, when a superlattice layer is formed of AlGaN doped with Si as an n-type impurity and an undoped GaN layer, since AlGaN is doped with Si, electrons are emitted to the conduction band as donors. Electrons fall into the low-potential GaN conduction band. Since the GaN crystal is not doped with a donor impurity, it is not subject to carrier scattering by the impurity. Therefore, the electrons can easily move in the GaN crystal, and the substantial mobility of electrons increases. This is similar to the effect of the two-dimensional electron gas described above, and the substantial mobility in the lateral direction of the electron increases and the resistivity decreases. Furthermore, in AlGaN with a large band gap energy, Ga
The effect can be further increased by doping the n-type impurity at a high concentration in a central region relatively far from the N layer. That is, of the electrons moving in the GaN, the electrons passing through the portion close to the AlGaN layer are somewhat scattered by the n-type impurity ions (in this case, Si) in the portion of the AlGaN layer close to the GaN layer. However, as mentioned above, A
In the lGaN layer, when the portion adjacent to the GaN layer is undoped, AlGa
Since electrons that pass through a portion close to the N layer are less likely to be scattered by Si, the mobility of the undoped GaN layer is further improved. Although the operation is slightly different, there is a similar effect when the superlattice is constituted by the third nitride semiconductor layer and the fourth nitride semiconductor layer on the p-layer side, and the third nitride having a large band gap energy is obtained. It is desirable that the central region of the semiconductor layer is doped with a large amount of p-type impurities so that the portion adjacent to the fourth nitride semiconductor layer is reduced or undoped. On the other hand, a layer in which a nitride semiconductor layer having a small bandgap energy is doped with a large amount of n-type impurities can be configured to have the above-mentioned impurity concentration. The effect tends to be small.

As described above, the n-side cladding layer 12 and the p-side cladding layer 17 have been described as superlattice layers. However, in the present invention, the superlattice layer also includes an n-side buffer layer 11 as a contact layer, an n-side light guide. Layer 13, p-side cap layer 15, p-side light guide layer 16,
The p-side contact layer 18 and the like can have a superlattice structure. That is, any layer away from the active layer, in contact with the active layer, or any layer can be a superlattice layer. In particular, when the n-side buffer layer 11 on which the n-electrode is formed is a superlattice, an effect similar to the HEMT is likely to appear.

Furthermore, in the laser device according to the embodiment of the present invention, as shown in FIG. 1, the impurity (in this case, n-type impurity) concentration is 1 between the n-side cladding layer 12 made of a superlattice layer and the active layer 14. The n-side light guide layer 13 adjusted to × 10 ¹⁹ / cm ³ or less is formed. The n-side light guide layer 13, even undoped, but n-type impurities is likely to come diffused from other layers, in the present invention, 1 × 10 ¹⁹
If the doping amount is not more than / cm ³ , it operates as a light guide layer and does not impair the effects of the present invention. However, in the present invention, the impurity concentration of the n-side light guide layer 13 is preferably 1 × 10 ¹⁸ / cm ³ or less, more preferably 1 × 10 ¹⁷ / cm ³ or less, and undoped. Most preferred. The n-side light guide layer is preferably made of a nitride semiconductor containing In or GaN.

In the laser device of the embodiment, the p-side cladding layer 17 made of a superlattice layer is used.
And the active layer 14 has an impurity (in this case, p-type impurity) concentration of 1 × 10 ¹⁹ / cm
^The p-side light guide layer 16 adjusted to ³ or less is formed. In the present invention, p
The impurity concentration of the side guide layer 16 may be 1 × 10 ¹⁹ / cm ³ or less, but a preferable impurity concentration is 1 × 10 ¹⁸ / cm ³ or less, and most preferably undoped. In the case of a nitride semiconductor, if undoped, it usually shows n-type conductivity,
In the present invention, the conductivity type of the p-side guide layer 16 may be either n or p, and is referred to as a p-side light guide layer in this specification regardless of the conductivity type. In practice, p
There is also a possibility that type impurities may diffuse from other layers and enter the p-side light guide layer 16. The p-side light guide layer is also preferably made of a nitride semiconductor containing In or GaN.

The reason why it is preferable to have an undoped nitride semiconductor between the active layer and the cladding layer is as follows. That is, in the case of a nitride semiconductor, the light emission of the active layer is usually designed for 360 to 520 nm, particularly 380 to 450 nm.
An undoped nitride semiconductor has a lower absorptance of light having the above-mentioned wavelength compared to a nitride semiconductor doped with n-type impurities and p-type impurities. Accordingly, since the undoped nitride semiconductor is sandwiched between the active layer that emits light and the cladding layer as the light confinement layer, the light emission of the active layer is rarely extinguished. Can be realized, and the threshold voltage can be lowered. This effect can be confirmed if the impurity concentration of the light guide layer is 1 × 10 ¹⁹ / cm ³ or less.

Therefore, as a preferable combination of the present invention, a cladding layer having a superlattice structure in which impurities are modulation-doped is provided at a position away from the active layer, and the impurity concentration is low between the cladding layer and the active layer. A light emitting element having an undoped guide layer is preferable.

As a more preferable embodiment, in the light emitting device of the present invention, a band gap energy larger than the band gap energy at the interface between the p-side guide layer 16 and the p-side guide layer 16 is present between the p-side guide layer 16 and the active layer 14. A p-side cap layer 15 made of a nitride semiconductor having a thickness of 0.1 μm or less is formed, and the impurity concentration of the p-side cap layer is adjusted to 1 × 10 ¹⁸ / cm ³ or more. The thickness of the p-type cap layer 15 is adjusted to 0.1 μm or less, more preferably 500 angstroms or less, and most preferably 300 angstroms or less. This is because if the film is grown to a thickness greater than 0.1 μm, cracks are likely to occur in the p-type cap layer 15 and a nitride semiconductor layer with good crystallinity is difficult to grow. Thus, by forming a layer having a large band gap energy in contact with the active layer and forming a thin film having a thickness of 0.1 μm or less, the leakage current of the light emitting element tends to be reduced. As a result, electrons injected from the n-layer side accumulate in the active layer due to the energy barrier of the cap layer, and the probability of recombination of electrons and holes increases, so that the output of the device itself is improved. be able to. Further, it is necessary to adjust the impurity concentration to 1 × 10 ¹⁸ / cm ³ or more. This cap layer is a layer having a relatively high Al mixed crystal ratio, and a layer having a high Al mixed crystal ratio tends to have high resistance. For this reason, unless the carrier concentration is increased by doping impurities to lower the resistivity, this layer becomes a high-resistance i layer, which has a pin structure and poor current-voltage characteristics. It is because it tends to become. The cap layer on the p side may be formed on the n side. When forming on the n-side, it may or may not be doped with n-type impurities.

The laser device of the embodiment configured as described above includes the n-side cladding layer 12 and the p-type layer.
Since the side cladding layer 17 has a superlattice structure, the n-side cladding layer 12 and p
The electrical resistance of the side cladding layer 17 can be lowered, the threshold voltage can be lowered, and long-time laser oscillation is possible.
In the laser device of this embodiment, besides the n-side cladding layer 12 and the p-side cladding layer 17 having a superlattice structure, various measures can be taken as described above to further reduce the threshold voltage. It is said.

In the above embodiment, the n-side cladding layer 12 and the p-side cladding layer 17 have a superlattice structure, but the present invention is not limited to this, and the n-side cladding layer 12 and the p-side cladding layer 1 are not limited thereto.
Either one of 7 may have a superlattice structure. Even in the above manner, the threshold voltage can be lowered as compared with the conventional example.

In the embodiment, the n-side cladding layer 12 and the p-side cladding layer 17 have a superlattice structure, but the present invention is not limited to this, and the n-side cladding layer 12 and the p-side cladding layer 1 are not limited thereto.
Any one or more of the p-side and n-side nitride semiconductor layers other than 7 may have a superlattice structure. Even with the configuration described above, the threshold voltage can be lowered as compared with the conventional example.

In the above embodiment, the n-side cladding layer 12 and the p-side cladding layer 17 have a superlattice structure in the laser element, but the present invention is not limited to this, and the light emitting diode (LE
Needless to say, the present invention can be applied to other nitride semiconductor devices such as D). With the configuration described above, Vf (forward voltage) can be lowered in the light emitting diode.

Hereinafter, embodiments of the present invention will be described in detail with reference to FIGS. FIG. 2 is a perspective view showing the shape of the laser element of FIG.

[Example 1]
G on a substrate made of sapphire (C-plane) through a buffer layer made of GaN
A GaN substrate 10 is prepared by growing a single crystal of aN to a thickness of 50 μm.
This GaN substrate 10 is set in a reaction vessel, the temperature is increased to 1050 ° C., hydrogen is used as a carrier gas, ammonia and TMG (trimethyl gallium) are used as a source gas, and silane gas is used as an impurity gas. × 10 ¹⁸ / cm ³
An n-side buffer layer 11 made of doped GaN is grown to a thickness of 4 μm. This buffer layer also acts as a contact layer for forming an n-electrode when a light-emitting element having a structure as shown in FIG. 1 is manufactured. Further, this n-side buffer layer is a buffer layer grown at a high temperature. For example, on a substrate made of a material different from the nitride semiconductor body such as sapphire, SiC, spinel, at a low temperature of 900 ° C. or lower, GaN, AlN Etc. are distinguished from a buffer layer directly grown with a film thickness of 0.5 μm or less.

(N-side cladding layer 12 = superlattice layer)
Subsequently, n-type Al _0.2 G doped with Si at 1 × 10 ¹⁹ / cm ³ at 1050 ° C. using TMA (trimethylaluminum), TMG, ammonia, and silane gas.
A first layer made of a _0.8 N is grown to a thickness of 40 angstroms. Subsequently, silane gas and TMA are stopped, and a second layer made of undoped GaN is grown to a thickness of 40 angstroms. And first layer + second layer + first layer + second layer +
Thus, a superlattice layer is constructed, and 100 layers are alternately laminated, and an n-side cladding layer 12 made of a superlattice having a total film thickness of 0.8 μm is grown.

(N-side light guide layer 13)
Subsequently, the silane gas is stopped and an n-side light guide layer 13 made of undoped GaN is grown at a thickness of 0.1 μm at 1050 ° C. This n-side light guide layer acts as a light guide layer of the active layer, and it is desirable to grow GaN and InGaN, and it is usually desirable to grow with a film thickness of 100 Å to 5 μm, more preferably 200 Å to 1 μm. . This layer can also be an undoped superlattice layer. In the case of a superlattice layer, the band gap energy is larger than that of the active layer and smaller than Al _0.2 Ga _0.8 N of the n-side cladding layer.

(Active layer 14)
Next, the active layer 14 is grown using TMG, TMI, and ammonia as source gases. The active layer 14 is kept at a temperature of 800 ° C., and undoped In _0.2 Ga _0.8.
A well layer made of N is grown to a thickness of 25 Å. Next, a barrier layer made of undoped In _0.01 Ga _0.95 N is grown to a thickness of 50 Å at the same temperature only by changing the molar ratio of TMI. This operation is repeated twice, and an active layer having a multi-quantum well structure (MQW) having a total film thickness of 175 angstroms and a well layer is finally grown. The active layer may be undoped as in this embodiment, or may be doped with n-type impurities and / or p-type impurities. Impurities may be doped into both the well layer and the barrier layer, or one of them may be doped.

(P-side cap layer 15)
Next, the temperature is raised to 1050 ° C., and TMG, TMA, ammonia, Cp 2 Mg (
P-type Al ₀ doped with 1 × 10 ²⁰ / cm ³ Mg and having a band gap energy larger than that of the p-side light guide layer 16.
_{. A} p-side cap layer 17 made of ₃ Ga _0.7 N is grown to a thickness of 300 angstroms. As described above, the p-type cap layer 15 is formed with a thickness of 0.1 μm or less, and the lower limit of the film thickness is not particularly limited, but is preferably formed with a film thickness of 10 Å or more.

(P-side light guide layer 16)
Subsequently, Cp2Mg and TMA are stopped, and a p-side light guide layer 16 made of undoped GaN having a band gap energy smaller than that of the p-side cap layer 15 is grown at 1050 ° C. to a thickness of 0.1 μm. This layer acts as a light guide layer of the active layer, and is desirably grown by GaN and InGaN as with the n-type light guide layer 13. The p-side light guide layer may be a superlattice layer made of an undoped nitride semiconductor or an impurity-doped nitride semiconductor. In the case of a superlattice layer, the band gap energy is larger than the well layer of the active layer, and the A side of the p-side cladding layer
It is made smaller than l _0.2 Ga _0.8 N.

(P-side cladding layer 17)
Subsequently, p-type Al _0.2 G doped with 1 × 10 ²⁰ / cm ³ of Mg at 1050 ° C.
A third layer of a _0.8 N is grown to a thickness of 40 Å, then only TMA is stopped, and a fourth layer of undoped GaN is grown to a thickness of 40 Å. Then, this operation is repeated 100 times, and the total film thickness becomes 0.
A p-side cladding layer 17 made of an 8 μm superlattice layer is formed.

(P-side contact layer 18)
Finally, Mg is 2 × 10 ²⁰ / cm on the p-side cladding layer 17 at 1050 ° C.
^A p-side contact layer 18 made of ^3- doped p-type GaN is grown to a thickness of 150 Å. The p-side contact layer 18 is a p-type In _X Al _Y Ga _1-X
-YN (0.ltoreq.X, 0.ltoreq.Y, X + Y.ltoreq.1), preferably Mg-doped GaN, provides the most preferable ohmic contact with the p-electrode 21. Further, a nitride semiconductor having a small band gap energy in contact with the p-side cladding layer 17 having a superlattice structure containing p-type Al _Y Ga _1-Y N is used as a p-side contact layer.
Since the film thickness is reduced to 500 angstroms or less, the carrier concentration of the p-side contact layer 18 is substantially increased, a preferable ohmic with the p electrode is obtained, and the threshold current and voltage of the device are lowered.

In the reaction vessel, the wafer on which the nitride semiconductor is grown as described above,
Annealing is performed at 700 ° C. in a nitrogen atmosphere to further reduce the resistance of the layer doped with the p-type impurity.

After annealing, the wafer is removed from the reaction vessel, and as shown in FIG.
The uppermost p-side contact layer 18 and the p-side cladding layer 17 are etched by an E device to form a ridge shape having a stripe width of 4 μm. Thus, by forming the layer above the active layer in a striped ridge shape, the emission of the active layer is concentrated under the stripe ridge, and the threshold value is lowered. In particular, the p-side cladding layer 17 or more layer made of a superlattice layer is preferably formed into a ridge shape.

Next, a mask is formed on the ridge surface and etching is performed by RIE to expose the surface of the n-side buffer layer 11. The exposed n-side buffer layer 11 has an n-electrode 23.
It also acts as a contact layer for forming. In FIG. 1, the n-side buffer layer 11 is used as a contact layer. However, the exposed GaN substrate 10 may be used as a contact layer by etching up to the GaN substrate 10.

Next, a p-electrode 21 made of Ni and Au is formed in a stripe shape on the ridge outermost surface of the p-side contact layer 18. p with good ohmic with p-side contact layer
Examples of the material of the electrode 21 include Ni, Pt, Pd, Ni / Au, Pt / Au,
Pd / Au etc. can be mentioned.

On the other hand, the n-side buffer layer 11 in which the n-electrode 23 made of Ti and Al is exposed earlier.
It is formed in a stripe shape on the surface. n-side buffer layer 11 or GaN substrate 10
As the material of the n electrode 23 which can obtain a preferable ohmic, Al, Ti, W, C
Metals or alloys such as u, Zn, Sn, and In are preferred.

Next, as shown in FIG. 1, an insulating film 25 made of SiO ₂ is formed on the surface of the nitride semiconductor layer exposed between the p-electrode 21 and the n-electrode 23, and the p-electrode is interposed through this insulating film 25. A p-pad electrode 22 and an n-pad electrode 24 electrically connected to 21 are formed. The p-pad electrode 22 has the effect of expanding the substantial surface area of the p-electrode 21 so that the p-electrode side can be wire-bonded and die-bonded. On the other hand, the n pad electrode 24 has an action of preventing the n electrode 23 from peeling off.

As described above, the wafer on which the n-electrode and the p-electrode are formed is transferred to a polishing apparatus, and the sapphire substrate on which the nitride semiconductor is not formed is wrapped with a diamond abrasive, The thickness is 70 μm. After wrapping
Polish the substrate with 1 μm with a fine abrasive to make the substrate surface mirror-like, and make Au / Sn
To metallize the entire surface.

Thereafter, the Au / Sn side is scribed and cleaved in a bar shape in a direction perpendicular to the striped electrode, and a resonator is formed on the cleavage plane. A dielectric multilayer film made of SiO ₂ and TiO ₂ was formed on the resonator surface, and finally a bar was cut in a direction parallel to the p-electrode to form a laser chip. Next, the chip was placed face-up (with the substrate and the heat sink facing each other) on the heat sink, each electrode was wire bonded, and laser oscillation was attempted at room temperature. At room temperature, the threshold current density was 2.0 kA.
/ Cm ² and a threshold voltage of 4.0 V, continuous oscillation with an oscillation wavelength of 405 nm was confirmed.
It showed a life of over 00 hours.

[Example 2]
FIG. 3 is a schematic cross-sectional view showing the structure of a laser device according to another embodiment of the present invention. FIG. Yes. The second embodiment will be described below with reference to this figure. In FIG. 3, the same components as those in FIGS. 1 and 2 are denoted by the same reference numerals.

S on a substrate made of sapphire (C-plane) through a buffer layer made of GaN.
A GaN substrate 10 is prepared by growing a single crystal of GaN doped with i at 5 × 10 ¹⁸ / cm ³ to a thickness of 150 μm. An n-side buffer layer 11 is grown on the GaN substrate 10 in the same manner as in the first embodiment.

(Crack prevention layer 19)
After the growth of the n-side buffer layer 11, the temperature is set to 800 ° C. and the source gases are TMG, TM
A crack prevention layer 19 made of In _0.1 Ga _0.9 N doped with Si at 5 × 10 ¹⁸ / cm ³ is grown to a thickness of 500 Å using silane gas as I, ammonia, and impurity gas. The crack prevention layer 19 can be prevented from being cracked in the nitride semiconductor layer containing Al by growing it with an n-type nitride semiconductor containing In, preferably InGaN. The crack prevention layer is preferably grown with a film thickness of 100 Å or more and 0.5 μm or less. If it is thinner than 100 angstroms, it is difficult to act as a crack prevention as described above, and if it is thicker than 0.5 μm, the crystal itself tends to turn black.

After the growth of the crack prevention layer 19, an n-side cladding layer 12 made of a modulation-doped superlattice and an undoped n-side light guide layer 13 are grown in the same manner as in Example 1.

(N-side cap layer 20)
Subsequently, using TMG, TMA, ammonia and silane gas, the n-side light guide layer 13 is used.
An n-side cap layer 20 made of n-type Al _0.3 Ga _0.7 N doped with Si 5 × 10 ¹⁸ / cm ³ and having a larger band gap energy is grown to a thickness of 300 Å.

Thereafter, an active layer 14, a p-side cap layer 15, an undoped p-side light guide layer 16, a p-side cladding layer 17 made of a modulation-doped superlattice, and a p-side contact layer 18 are grown in the same manner as in Example 1.

After the growth of the nitride semiconductor layer, annealing is performed in the same manner to further reduce the resistance of the layer doped with the p-type impurity. After annealing, the uppermost p-side contact layer 18 and the p-side cladding as shown in FIG. The layer 17 is etched to form a ridge shape having a stripe width of 4 μm.

After the ridge is formed, the p-side contact layer 18 has a p-side made of Ni / Au on the ridge outermost surface.
The electrode 21 is formed in a stripe shape, and an insulating film 25 made of SiO ₂ is formed on the outermost nitride semiconductor layer other than the p electrode 21, and is electrically connected to the p electrode 21 through the insulating film 25. A p-pad electrode 22 is formed.

As described above, the wafer on which the p-electrode is formed is transferred to a polishing apparatus, the sapphire substrate is removed by polishing, and the surface of the GaN substrate 10 is exposed. Exposed Ga
An n electrode 23 made of Ti / Al is formed on almost the entire surface of the N substrate.

After electrode formation, the GaN substrate is cleaved at the M-plane (the plane corresponding to the side of the hexagonal column when the nitride semiconductor is approximated by a hexagonal system), and a dielectric multilayer film made of SiO ₂ and TiO _{2 is formed} on the cleaved surface. Finally, the bar is cut in a direction parallel to the p-electrode to form a laser element. Similarly, this laser element also showed continuous oscillation at room temperature and exhibited almost the same characteristics as in Example 1.

[Example 3]
In Example 1, after growing the n-side buffer layer 11, the crack prevention layer 19 is grown in the same manner as in Example 2. Next, on the crack prevention layer, Si is 1 × 10 ^1.
An n-side clad layer 12 made of only a single layer of Al _0.3 Ga _0.7 N layer doped with ⁹ / cm ³ is grown to a thickness of 0.4 μm. After that, when a laser element was fabricated in the same manner as in Example 1, laser oscillation was similarly exhibited at room temperature, but the lifetime was slightly shorter than that of the laser element of Example 1.

[Example 4]
In Example 1, Mg was 1 × 10 ²⁰ / cm ³ during the growth of the p-side cladding layer 17.
A laser device was fabricated in the same manner as in Example 1 except that a single layer of doped Al _0.3 Ga _0.7 N layer was grown to a thickness of 0.4 μm. However, the lifetime was slightly shorter than that of the laser device of Example 1.

[Example 5]
In Example 1, the n-side cladding layer 12 does not have a superlattice structure, and Si is 1 × 1.
An Al _0.2 Ga _0.8 N layer doped with 0 ¹⁸ / cm ^{3 is} 0.4 μm. P
Similarly, the side clad layer does not have a superlattice structure, and an Al _0.2 Ga _0.8 N layer doped with 1 × 10 ²⁰ / cm ^{3 of} Mg is 0.4 μm. Instead, the n-side light guide layer 13 is made of undoped In _0.01 Ga _0.99 N layer 30 Å, and Si is 1 ×
Total thickness of 10 ¹⁷ / cm ³ doped GaN layer 30 angstroms stacked
. A superlattice structure of 12 μm is used, and the p-side light guide layer 16 is undoped In _0.01 G
a _0.99 N layer 30 angstrom and Mg layer 1 × 10 ¹⁷ / cm ³ doped GaN layer 30 angstrom laminated to form a superlattice structure with a total film thickness of 0.12 μm. When the laser element was manufactured, the laser oscillation was also exhibited at room temperature, but the lifetime was slightly shorter than that of the laser element of Example 1.

[Example 6]
In Example 1, when forming the n-side buffer layer 11, the undoped GaN layer was 30 Å, and Si was doped with Al _0.05 G doped with 1 × 10 ¹⁹ / cm ^3.
a _0.95 N layer is formed as a superlattice layer having a total thickness of 1.2 μm formed by stacking 30 Å Thereafter, in the same manner as in Example 1, the upper layer from the n-side cladding layer 12 is grown to form a laser element. However, when forming the n-electrode, the surface exposed by etching is in the middle of the above-mentioned 1.2 μm superlattice layer, and the n-electrode is formed on the superlattice layer. Similarly, this laser element also oscillated continuously at room temperature, the threshold value was slightly lower than that of Example 1, and the lifetime was 1000 hours or more.

[Example 7]
FIG. 4 is a schematic cross-sectional view showing the structure of a laser device according to another embodiment of the present invention. The same reference numerals as those in the other drawings indicate the same layers. Hereinafter, Example 7 is demonstrated based on this figure.

As in Example 1, a buffer layer (not shown) made of GaN is grown to a thickness of 200 angstroms at 500 ° C. on a sapphire substrate 30 having a 2 inch φ, (0001) C plane as the main surface. After that, the temperature is set to 1050 ° C. and undoped Ga
The N layer 31 is grown to a thickness of 5 μm. Note that the film thickness to be grown is not limited to 5 μm, and it is desirable to grow the film thicker than the buffer layer and adjust the film thickness to 10 μm or less. As the substrate, a substrate made of a material different from a nitride semiconductor, which is known for growing a nitride semiconductor such as SiC, ZnO, spinel, GaAs, or the like, can be used.

Next, after this undoped GaN layer 31 grows, the wafer is taken out of the reaction vessel,
A striped photomask is formed on the surface of the GaN layer 31, and a protective film 32 made of SiO _{2 having a} stripe width of 20 μm and a stripe interval (window portion) of 5 μm is formed to a thickness of 0.1 μm by a CVD apparatus. FIG. 4 is a schematic cross-sectional view showing a partial wafer structure when cut in a direction perpendicular to the major axis direction of the stripe. The shape of the protective film may be any shape such as a stripe shape, a dot shape, or a grid shape, but the exposed portion of the undoped GaN layer 31, that is, the portion where the protective film is not formed (
The GaN substrate 10 with fewer crystal defects is formed by increasing the area of the protective film than the window portion).
Easy to grow. Examples of the material for the protective film include silicon oxide (SiO _X ), silicon nitride (Si _X N _Y ), titanium oxide (TiO _X ), and zirconium oxide (ZrO).
_In addition to oxides and nitrides such as _{X 2} ), and multilayer films thereof, metals having a melting point of 1200 ° C. or higher can be used. These protective film materials can withstand the nitride semiconductor growth temperature of 600 ° C. to 1100 ° C., and the nitride semiconductor does not grow or hardly grow on the surface thereof.

After forming the protective film 32, the wafer is set again in the reaction vessel, and a GaN layer to be the GaN substrate 10 made of undoped GaN is grown to a thickness of 10 μm at 1050 ° C. The preferred growth thickness of the GaN layer to be grown varies depending on the thickness and size of the protective film 32 formed earlier, but in the lateral direction (perpendicular to the thickness direction) above the protective film so as to cover the surface of the protective film 32 Grow to a sufficient thickness so that it grows in any direction. When the GaN substrate 10 is grown on the surface of the protective film 32 having the property that the nitride semiconductor is difficult to grow in this manner by growing the GaN layer in the lateral direction, the GaN layer is initially formed on the protective film 32. The GaN layer is selectively grown on the undoped GaN layer 31 in the window. Subsequently, when the growth of the GaN layer is continued, the GaN layer grows in the lateral direction, covers the protective film 32, and is connected with the GaN layers grown from the adjacent windows. The state is as if the GaN layer has grown. That is, a GaN layer is grown in the lateral direction on the GaN layer 31 via the protective film 32. Here, what is important is the number of crystal defects of the GaN layer 31 grown on the sapphire substrate 30 and the crystal defects of the GaN substrate 10 grown on the protective film 32. That is, due to the mismatch of the lattice constant between the heterogeneous substrate and the nitride semiconductor, a very large number of crystal defects are generated in the nitride semiconductor grown on the heterogeneous substrate, and these crystal defects are formed in the upper layer sequentially. It is transmitted to the surface during the growth of physical semiconductors. On the other hand, as in the seventh embodiment, G grown laterally on the protective film 32 is formed.
Since the aN substrate 10 is not directly grown on a different kind of substrate, a GaN layer grown from an adjacent window is connected to the protective film 32 while growing in a lateral direction. The number of defects is very small compared to those grown directly from different substrates. Therefore, a partially formed protective film is formed on the nitride semiconductor layer grown on the heterogeneous substrate, and is grown laterally on the protective film.
By using the N layer as the substrate, a GaN substrate with much fewer crystal defects than the GaN substrate of Example 1 can be obtained. Actually, the crystal defect of the undoped GaN layer 31 is 10 ¹⁰ / cm ² or more, but the crystal defect of the GaN substrate 10 by the method of Example 7 can be reduced to 10 ⁶ / cm ² or less.

After the GaN substrate 10 is formed as described above, an n-side buffer layer made of GaN doped with Si at 1 × 10 ¹⁸ / cm ³ is formed on the GaN substrate in the same manner as in Example 1, and the contact layer 11 is 5 μm. In the same manner as in Example 2,
A crack preventing layer 19 made of In _0.1 Ga _0.9 N doped with 5 × 10 ¹⁸ / cm ^{3 of} Si is grown to a thickness of 500 Å. The crack preventing layer 19 can be omitted.

(N-side cladding layer 12 having a superlattice structure with a high impurity concentration at the center)
Next, using TMG and ammonia gas at 1050 ° C., a second nitride semiconductor layer having a small band gap energy is formed by growing an undoped GaN layer with a thickness of 20 Å. Next, at the same temperature, TMA is added to grow an undoped Al _0.1 Ga _0.9 N layer by 5 Å, and then silane gas is added to add Si _0.1 × 10 ¹⁹ / cm ³ doped Al _0.1 Ga. _0.9 N
After the layer is grown to a thickness of 20 Angstroms, Si is stopped and undoped Al
_{A 0.1} Ga _0.9 N layer is further grown to a thickness of 5 Å to form a first nitride semiconductor layer having a large band gap energy and a thickness of 30 μm. Thereafter, similarly, the second nitride semiconductor layer and the first nitride semiconductor layer are alternately and repeatedly formed. In Example 7, the second nitride semiconductor layer and the first nitride semiconductor layer are stacked so as to be 120 layers, respectively, and the n-side cladding layer 12 having a superlattice structure having a thickness of 0.6 μm is formed. Form.

Next, in the same manner as in Example 1, the n-side light guide layer 13, the active layer 14, the p-side cap layer 15, and the p-side light guide layer 16 are grown in this order.

(P-side cladding layer 17 having a superlattice structure with a high impurity concentration at the center)
Next, by using TMG and ammonia gas at 1050 ° C., an undoped GaN layer is grown to a thickness of 20 Å to form a fourth nitride semiconductor layer having a small band gap energy. Next, at the same temperature, TMA is added to grow an undoped Al _0.1 Ga _0.9 N layer by 5 Å, and then C
Al _0.1 Ga _0.9 N doped with 1 × 10 ²⁰ / cm ^{3 of} Mg by adding p ₂ Mg
After the layer is grown to a thickness of 20 Å, Cp ₂ Mg is stopped and an undoped Al _0.1 Ga _0.9 N layer is further grown to a thickness of 5 Å, thereby increasing the thickness of the band gap energy. A 30 μm third nitride semiconductor layer is formed. Thereafter, similarly, the fourth nitride semiconductor layer and the third nitride semiconductor layer are alternately and repeatedly formed. In Example 7, the fourth nitride semiconductor layer and the third nitride semiconductor layer are stacked so as to be 120 layers each, and the n-side cladding layer 17 having a superlattice structure having a thickness of 0.6 μm is formed. Form.

Finally, after growing the p-side contact layer 18 in the same manner as in Example 1,
The wafer is taken out from the reaction vessel, annealed, and then etched to form a layer of the p-side cladding layer 17 or more in a striped ridge shape.

Next, as shown in FIG. 4, etching is performed symmetrically with respect to the ridge so as to expose the surface of the n-side buffer layer on which the n-electrode 23 is to be formed, thereby forming the n-electrode 23, while p
A p-electrode 21 is also formed in a stripe shape on the ridge outermost surface of the side contact layer 18.
After that, a laser device was manufactured in the same manner as in Example 1. As a result, the current density and voltage were reduced by about 10% as compared with those in Example 1, and the continuous oscillation lifetime at a wavelength of 405 nm was 2000 hours. The above life was shown. This is largely due to the improvement in crystallinity of the nitride semiconductor due to the use of the GaN substrate 10 having few crystal defects. In FIG. 4, when the GaN substrate 10 is grown to a thickness of, for example, 80 μm or more, the heterogeneous substrate 30 to the protective film 32 can be removed.

[Example 8]
In Example 7, when the n-side cladding layer 12 was grown, the central portion was not made high in impurity concentration, the normal undoped GaN layer was 20 angstroms, and Si was 1 × 1.
An Al _0.1 Ga _0.9 N layer doped with 0 ¹⁹ / cm ³ is laminated with 20 angstroms to form a superlattice structure with a _total film thickness of 0.6 μm.

On the other hand, when the p-side cladding layer 17 is grown, Al _0.1 Ga _0.9 doped with 20 angstroms of undoped GaN layer and 1 × 10 ²⁰ / cm ^{3 of} Mg without making the central portion high impurity concentration. A laser element was fabricated in the same manner as in Example 7 except that the N layer was stacked with 20 angstroms to form a superlattice structure with a total film thickness of 0.6 μm. Lifespan is almost the same 2
More than 000 hours.

[Example 9]
In Example 7, when the n-side cladding layer 12 was grown, 1 × 10 ¹⁹ Si was used.
/ Cm ³ doped GaN layer with 25 Å and undoped Al _0.1 G
A _0.9 N layer is alternately laminated with 25 angstroms to form a superlattice structure with a total film thickness of 0.6 μm. On the other hand, when the p-side cladding layer 17 is grown, 1 × 10 Mg is used.
²⁰ / cm ³ doped GaN layer with 25 Å and undoped Al _0.
1 Ga _0.9 N layers are stacked alternately with 25 angstroms, and the total film thickness is 0.6 μm.
A laser element was fabricated in the same manner as in Example 7 except that the superlattice structure was used. As a result, a laser element having substantially the same characteristics and life as that of Example 7 was obtained.

[Example 10]
In Example 7, when the n-side cladding layer 12 was grown, 1 × 10 ¹⁹ Si was used.
/ Cm ³ doped GaN layer with 25 Å and Si with 1 × 10 ¹⁷ / cm
^Three- doped Al _0.1 Ga _0.9 N layers are alternately stacked with 25 Å to form a superlattice structure with a _total film thickness of 0.6 μm. On the other hand, when the p-side cladding layer 17 is grown, a GaN layer doped with 1 × 10 ²⁰ / cm ^{3 of} Mg is 25 angstroms and Al _0.1 Ga _0.9 doped with 1 × 10 ¹⁸ / cm ^{3 of} Mg. A laser device was fabricated in the same manner as in Example 7 except that the N layer was alternately laminated with 25 angstroms to obtain a superlattice structure with a total film thickness of 0.6 μm. A laser device having a lifetime was obtained.

[Example 11]
In Example 7, without using the superlattice structure for the n-side cladding layer, Si was 1 × 10 ^{1.
A 9} / cm ³ doped Al _0.1 Ga _0.9 N layer is grown to a thickness of 0.6 μm. On the other hand, when the p-side cladding layer 17 is grown, a GaN layer doped with 1 × 10 ²⁰ / cm ^{3 of} Mg is 25 Å and Al doped with 1 × 10 ¹⁸ / cm ^3.
_0.1 Ga _0.9 N layers are alternately stacked with 25 angstroms, resulting in a total film thickness of 0.6.
A laser device was manufactured in the same manner as in Example 7 except that the superlattice structure was μm. The threshold value was slightly higher than that in Example 7, but the lifetime was also 1000 hours or longer.

[Example 12]
In Example 7, the impurity concentration in the superlattice of the n-side cladding layer and the p-side cladding layer is set to a normal modulation dope (the central portion is not high concentration, and the layer is substantially uniform),
When growing the n-side buffer layer 11, A doped with Si at 1 × 10 ¹⁹ / cm ³
l _0.05 Ga _0.95 N layer 50 Å and undoped GaN layer 50
A laser device was fabricated in the same manner as in Example 7 except that the angstroms were alternately grown to form a superlattice layer having a total film thickness of 2 μm. The threshold value was slightly reduced compared to that in Example 7, The lifetime was over 3000 hours.

[Example 13]
In Example 7, the n-side cladding layer 12 is an undoped GaN layer 20 Å, and the Al _0.1 Ga _0.9 N layer 20 is doped with Si at 1 × 10 ¹⁹ / cm ^3.
A superlattice structure with a total film thickness of 0.6 μm is formed by stacking angstrom. The next n-side light guide layer 13 is grown alternately with a GaN layer 25 angstroms doped with Si 1 × 10 ¹⁹ / cm ³ and an undoped Al _0.05 Ga _0.95 N layer 25 angstroms. .1 μm superlattice structure.

On the other hand, the p-side light guide layer is also a GaN layer 25 doped with 1 × 10 ¹⁹ / cm ^{3 of} Mg.
An angstrom and an undoped Al _0.05 Ga _0.95 N layer 25 angstrom are grown alternately to form a superlattice structure with a total film thickness of 0.1 μm. Next, the p-side cladding layer 17 is composed of an undoped GaN layer 20 angstroms, and Mg is 1 × 10
^A laser device was fabricated in the same manner except that a 20 μm ³ doped Al _0.1 Ga _0.9 N layer was alternately stacked with a 20 Å superlattice structure with a _total film thickness of 0.6 μm. Compared with that of Example 7, the threshold value is slightly lowered and the lifetime is 3
More than 000 hours.

[Example 14]
Example 14 is a laser device configured using the GaN substrate 10 as in Example 7.
That is, the laser element of Example 14 is configured by forming the following semiconductor layers on a GaN substrate 10 configured in the same manner as in Example 7.
First, an n-side contact layer (n-side second nitride semiconductor layer) made of n-type GaN doped with Si of 1 × 10 ¹⁸ / cm ³ or more is formed on the GaN substrate 10 at 2 μm.
Growing with a film thickness of Note that this layer and GaN undoped with, Si may be superlattice layer consisting of a doped _{Al X Ga 1-X N (} 0 <X ≦ 0.4).

Next, after growing the n-side contact layer, the temperature is set to 800 ° C., and Si is 5 × 10 ¹⁸ / cm ^{3 with} TMG, TMI, ammonia, and silane gas in a nitrogen atmosphere.
A crack preventing layer made of doped In _0.1 Ga _0.9 N is grown to a thickness of 500 Å. This crack prevention layer can be prevented from being cracked in a nitride semiconductor layer containing Al to be grown later by growing it with an n-type nitride semiconductor containing In, preferably InGaN. The crack prevention layer is preferably grown with a film thickness of 100 Å or more and 0.5 μm or less. If it is thinner than 100 angstroms, it is difficult to act as a crack prevention as described above, and if it is thicker than 0.5 μm, the crystal itself tends to turn black.

Subsequently, using TMA, TMG, ammonia, silane gas at 1050 ° C., Si
4 of a layer made of n-type Al _0.2 Ga _0.8 N doped with 1 × 10 ¹⁹ / cm ³
A total thickness of 0.8 Å and an undoped GaN layer were grown to a thickness of 40 Å, and these layers were alternately stacked 100 layers each.
An n-side cladding layer made of a μm superlattice is grown.

Subsequently, an n-side light guide layer made of undoped Al _0.05 Ga _0.95 N is set to 0
. Growing with a film thickness of 1 μm. This layer acts as a light guide layer for guiding the light of the active layer, and may be doped with n-type impurities in addition to undoped. Also this layer is Ga
A superlattice layer made of N and AlGaN can also be used.

Next, an active layer made of undoped In _0.01 Ga _0.99 N is grown to a thickness of 400 Å.

Next, p made of p-type Al _0.2 Ga _0.8 N doped with 1 × 10 ¹⁹ / cm ^{3 of} Mg having a larger band cap energy than a p-side light guide layer to be formed later.
A side cap layer is grown to a thickness of 300 Å.

Next, the band cap energy is smaller than that of the p-side cap layer, Al _0.0
A p-side light guide layer made of ₁ Ga _0.99 N is grown to a thickness of 0.1 μm. This layer acts as a light guide layer for the active layer. The p-side light guide layer can be a superlattice layer made of an undoped nitride semiconductor. In the case of a superlattice layer, the band cap energy of the layer (barrier layer) having the larger band cap energy is larger than that of the active layer and smaller than that of the p-side cladding layer.

Subsequently, 40 angstroms of p-type Al _0.2 Ga _0.8 N layer doped with 1 × 10 ¹⁹ / cm ^{3 of} Mg and 40 angstroms of undoped GaN are alternately stacked and grown to a total thickness of 0.8 μm. A p-side cladding layer having a lattice layer structure is grown.

Finally, a p-side contact layer made of p-type GaN doped with 1 × 10 ²⁰ / cm ^{3 of} Mg is grown on the p-side cladding layer to a thickness of 150 Å. In particular, in the case of a laser element, a nitride semiconductor having a small band cap energy is used as a p-side contact layer in contact with a p-side cladding layer having a superlattice structure containing AlGaN, and its thickness is reduced to 500 angstroms or less. The carrier concentration of the p-side contact layer is substantially increased, and a preferable ohmic with the p-electrode is obtained, and the threshold current and voltage of the device tend to decrease.

After annealing the nitride semiconductor grown wafer as described above at a predetermined temperature to further reduce the resistance of the layer doped with the p-type impurity, the wafer is taken out of the reaction vessel and the uppermost layer is removed by an RIE apparatus. The p-side contact layer and the p-side cladding layer are etched to form a ridge shape having a stripe width of 4 μm.
Thus, by forming the layer above the active layer in a striped ridge shape, the emission of the active layer is concentrated under the stripe ridge, and the threshold value is lowered. The p-side cladding layer and higher layers are preferably ridge-shaped.

Next, a mask is formed on the ridge surface, etching is performed by RIE, the surface of the n-side contact layer is exposed, and an n electrode made of Ti and Al is formed in a stripe shape. On the other hand, a p-electrode made of Ni and Au is formed in a stripe shape on the ridge outermost surface of the p-side contact layer. Examples of the electrode material that can provide a preferable ohmic with the p-type GaN layer include Ni, Pt, Pd, Ni / Au, Pt / Au, Pd / Au, and the like. Examples of the electrode material that can provide a preferable ohmic with n-type GaN include metals such as Al, Ti, W, Cu, Zn, Sn, and In, or alloys thereof.

Next, an insulating film made of SiO ₂ is formed on the surface of the nitride semiconductor layer exposed between the p electrode and the n electrode, and a p pad electrode electrically connected to the p electrode through the insulating film is formed. Form. This p pad electrode substantially increases the surface area of the p electrode so that the p electrode side can be wire bonded and die bonded.

As described above, the wafer on which the n-electrode and the p-electrode are formed is transferred to a polishing apparatus, and the sapphire substrate on which the nitride semiconductor is not formed is wrapped with a diamond abrasive, The thickness is 70 μm. After wrapping
Polish the substrate with 1 μm with a fine abrasive to make the substrate surface mirror-like, and make Au / Sn
To metallize the entire surface.

Thereafter, the Au / Sn side is scraped to cleave in a bar shape in a direction perpendicular to the striped electrode, and a resonator is formed on the cleavage surface. A dielectric multilayer film made of SiO ₂ and TiO ₂ on the resonator surface Finally, the bar is cut in a direction parallel to the p-electrode to form a laser chip. Next, the chip was placed face-up (with the substrate and the heat sink facing each other) on the heat sink, each electrode was wire bonded, and laser oscillation was attempted at room temperature. At room temperature, the threshold current density was 2.0 kA.
/ Cm ² and a threshold voltage of 4.0 V, continuous oscillation with an oscillation wavelength of 368 nm was confirmed.
A lifetime of 000 hours or more was exhibited.

1 is a schematic cross-sectional view showing a structure of a laser element formed according to an embodiment of the present invention. The perspective view of the laser element of FIG. FIG. 6 is a schematic cross-sectional view showing the structure of a laser device of Example 2 according to the present invention. FIG. 10 is a schematic cross-sectional view showing the structure of a laser device of Example 7 according to the present invention.

Explanation of symbols

10 ... GaN substrate,
11 ... n-side buffer layer,
12: n-side cladding layer having a superlattice structure,
13 ... n-side guide layer,
14 ... active layer,
15 ... p-side cap layer,
16 ... p-side guide layer,
17 ... p-side cladding layer having a superlattice structure,
18... P-side contact layer,
19 ... crack prevention layer,
20 ... n-side cap layer,
21 ... p electrode,
22 ... p pad electrode,
23 ... n electrode,
24... N pad electrode,
25: Insulating film.

Claims (11)

A nitride semiconductor element in which an active layer is formed between a nitride semiconductor layer on the n-conductivity side and a nitride semiconductor layer on the p-conductivity side;
In the nitride semiconductor layer on the n conductive side,
In the active layer and remote location, or contact position, different n-type impurity concentration from each other, the first GaN and _{In z Ga 1-z N (} 0 <z <1) and the second nitride semiconductor layer A nitride semiconductor device comprising an n-side strained superlattice layer formed by laminating layers.
In the n-side strained superlattice layer, the first nitride semiconductor layer has a band gap energy larger than that of the second nitride semiconductor layer and an n-type impurity concentration larger than that of the second nitride semiconductor layer. The nitride semiconductor device according to claim 1 . The n-type impurity concentration of the first nitride semiconductor layer is in the range of 1 × 10 ¹⁷ / cm ³ to 1 × 10 ²⁰ / cm ³ , and the n-type impurity concentration of the second nitride semiconductor layer is 1 × 10 The nitride semiconductor device according to claim 2 , wherein the nitride semiconductor device is ¹⁹ / cm ³ or less. In the n-side strained superlattice layer, the first nitride semiconductor layer has a larger bandgap energy than the second nitride semiconductor layer and an n-type impurity concentration smaller than the second nitride semiconductor layer. The nitride semiconductor device according to claim 1 . The n-type impurity concentration of the first nitride semiconductor layer is 1 × 10 ¹⁹ / cm ³ or less, and the n-type impurity concentration of the second nitride semiconductor layer is 1 × 10 ¹⁷ / cm ³ to 1 × 10. The nitride semiconductor device according to claim 4 , wherein the nitride semiconductor device is in a range of ²⁰ / cm ³ . The first to one of the nitride semiconductor layer or said second nitride semiconductor layer, nitride according to any one of claims 1 to 5 in which n-type impurities are not doped semiconductor element. The nitride semiconductor device according to the active layer is any one of claims 1 to 6 is a quantum well structure having a quantum well layer of InGaN layer. The n-side strained superlattice layer is provided between the n-side contact layer provided in the nitride semiconductor layer on the n-conductive side and the active layer, according to any one of claims 1 to 7 . Nitride semiconductor device. The nitride semiconductor device according to claim 9, wherein the n-side strained superlattice layer is provided in contact with the active layer. The nitride semiconductor element is an LED element having an n-side cladding layer,
The nitride semiconductor device according to claim 8, wherein the n-side strained superlattice layer is the n-side cladding layer. The nitride semiconductor element is a laser oscillation element in which the active layer is located between a p-side cladding layer and an n-side cladding layer,
Before Symbol n-side cladding layer, a nitride semiconductor device according to any one of claims 1-9 wherein an n-side strained superlattice layer.

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