JP3219596B2 - Manufacturing method of optical recording medium - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a relates to a method of manufacturing an optical recording medium body, in particular an optical recording medium having an inorganic dielectric film on a substrate
And a method for producing the same.

[0002]

2. Description of the Related Art In recent years, there has been a demand for a recording medium having a large recording capacity and capable of high-speed data transfer as a computer memory or an image information memory. As a recording medium that meets these demands, for example, a magneto-optical recording medium or a phase-change recording medium has been actively developed as an optical recording medium that performs recording and reproduction using a laser beam.

That is, when a polarized laser beam is applied to the surface of a recording layer containing a magnetic material, the rotation direction of the polarization plane of the reflected laser beam is different depending on the direction of magnetization of the magneto-optical recording medium. On the other hand, a phase-change type recording medium is, for example, a type that changes between an amorphous state and a crystalline state when a recording layer containing Te is irradiated with a laser beam. In this method, information is recorded / reproduced by utilizing reversible phase transitions and different optical characteristics indicated by each state.

In these optical recording media, for example, an inorganic dielectric film is provided between a recording film and a substrate in order to obtain a reproduced signal having a larger C / N ratio, and the reproduced signal is formed by using an optical interference effect. 4 (a), and the recording film 401 is changed to an inorganic dielectric film 402 as shown in FIG.
And 403, the recording film 4 is amplified together with the amplification of the reproduction light.
01 is used as a protective film.
Further, a configuration in which a reflective layer 404 is added on the inorganic dielectric layer 403 as shown in FIG. 4B to further enhance the interference effect is also known.

[0005] As such an inorganic dielectric layer,
Conventionally, for example, Si ₃ N ₄ , SiC, SiO, SiO
₂ , amorphous Si (a-Si), AlN, Al ₂ O
₃ , a thin film of TiO ₂ , Ta ₂ O ₅ , ZnS or the like is used.

As described above, the performance of a magneto-optical recording medium or a phase-change optical recording medium using such an inorganic dielectric, such as the C / N ratio of a reproduction signal and the temporal stability of the recording film, are as described above. Not only does it depend heavily on the characteristics of the dielectric film but also at present, research laboratories at home and abroad have enhanced the effect of reproducing signals to improve the performance of optical recording media and have excellent protection performance for the recording layer. Active research and development has been conducted on dielectric materials and manufacturing methods. For example, as described in Japanese Patent Publication No. 15929/1990, AlN or SiN is used as an Al target, and N ₂ is obtained using a Si target.
It can be formed by reactive sputtering in a gas atmosphere, or disclosed in JP-A-3-66043,
As described in JP-A-69033 and JP-A-4-30343, attempts have been made to form an inorganic dielectric layer film for an optical recording medium by ECR plasma CVD.

However, in recent years, it has been required to improve the film forming speed of the inorganic dielectric film in the trend of reducing the cost of the optical recording medium.

Under such circumstances, the reactive sputtering method among the above-mentioned methods for forming an inorganic dielectric film significantly increases the power applied to a target in order to increase the film deposition rate. However, in this case, it is difficult to stably form a high-quality inorganic dielectric film for an optical recording medium because the concentration of charges on the target tends to cause abnormal discharge to the target. . On the other hand, although the plasma CVD method can form a film at a higher speed as compared with the reactive sputtering method, the inorganic dielectric film having an excellent enhancement effect and the recording layer protection performance is a cause of the deformation of the optical recording medium. In order to form a film without including such stress, there is an upper limit on the film forming speed itself, which is insufficient to reduce the cost of the optical recording medium.

In the conventional plasma CVD method, a uniform plasma density can be obtained only in a limited area inside the chamber, and when a uniform inorganic dielectric film is to be simultaneously formed on a plurality of substrates. In addition, it is necessary to increase the size of a film forming apparatus, and it has not been easy to reduce the cost of an optical recording medium using a plasma CVD method.

[0010]

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned problems, and a main object of the present invention is to suppress the deformation such as warpage or bending while suppressing the C / N ratio of a reproduced signal.
It is an object of the present invention to provide a method of manufacturing an optical recording medium capable of manufacturing an optical recording medium capable of stably maintaining a high ratio at a low cost.

[0011]

[0012]

Means for Solving the Problems The inventors of the present invention have conducted intensive studies on the above object, and as a result, supplied a microwave into a plasma chamber via a microwave introduction device having an endless annular waveguide. When using a microwave plasma processing apparatus configured as described above, a high-quality inorganic dielectric film having an excellent enhancement effect and protection performance of a recording film and having a low internal stress can be formed at a high speed with a uniform film thickness over a large area. The present invention has been found to be possible to form a film on the substrate, the manufacturing method of the optical recording medium of the present invention is a method of manufacturing an optical recording medium having a laminated film of a recording film and an inorganic dielectric film on a substrate. A step of forming the recording film on the substrate, and a step of forming the inorganic dielectric film on the substrate by a microwave plasma CVD method performed using a microwave plasma processing apparatus, Ma The plasma processing apparatus includes a plasma chamber, gas introduction means, and an endless annular waveguide disposed so as to surround the plasma chamber, wherein the endless annular waveguide has an inner wall, an outer wall, the inner wall, and the endless annular waveguide. A gap formed with the outer wall, and a microwave introduction unit for introducing microwaves into the gap, and a plurality of slots for supplying microwaves to the plasma chamber are provided on the inner wall at predetermined intervals. It is characterized in that it is.

[0013]

[0014]

Next, the present invention will be described with reference to the drawings.

FIG. 1 shows an apparatus for continuously forming an in-line type inorganic dielectric film and a recording film applied to an embodiment of a method for manufacturing an optical recording medium as shown in FIG. 4B according to the present invention. FIG. 1 is a schematic plan view of 101, and 101 is a loading chamber for a substrate 100;
2 is a degassing chamber, 103 and 104 are inorganic dielectric films 402,
A film forming chamber 403, a film forming chamber 105 for a recording film 401 such as a magneto-optical recording film, a film forming chamber 106 for a reflective film, and a recording film 401 and an inorganic dielectric film 40.
This is an unloading chamber for the substrate 100 on which 2,403 films have been formed. An openable and closable door (not shown) is provided between the chambers, and a substrate holder 108 for holding the substrate 100 is formed so as to be sequentially movable from the substrate loading chamber 101 to the substrate unloading chamber 107.

The optical recording medium substrate 100 is conveyed from the substrate input chamber 101 to the substrate unloading chamber 107, and the substrate 100 is degassed in each chamber, and the inorganic dielectric film 40 is removed.
2, the formation of the recording film 401, the formation of the inorganic dielectric film 403, and the formation of the reflection layer 404, in that order, the recording film 401 and the inorganic dielectric films 402 and 40 on the substrate.
Thus, an optical recording medium having a laminated film of the optical recording medium 3 and the reflective layer 404 is formed.

In this embodiment, a microwave plasma CVD film forming apparatus having a microwave introducing means having an endless annular waveguide is disposed in the film forming chambers 103 and 105. Next, FIG. 2A is a schematic perspective view of a microwave plasma CVD film forming apparatus arranged in the film forming chamber 103 (105), and FIG. 2B is a substrate of the CVD apparatus of FIG. FIG. 3 is a schematic cross-sectional view in a direction orthogonal to a transport direction.

In FIG. 2, reference numeral 201 denotes a plasma chamber; 202, a film forming chamber; and 203, a degassing chamber 102.
Transport path from the substrate to the inorganic dielectric film forming chamber 103, 204
Denotes a substrate transport path from the film forming chamber 103 to the recording film forming chamber 104. Reference numeral 205 denotes an endless annular waveguide disposed around the plasma chamber. Reference numeral 206 denotes a microwave introduction unit to the annular waveguide 205. Reference numerals 207 and 208 denote gas introduction into the plasma chamber 201 and the film formation chamber 202. Means.

Next, FIG. 3A is a schematic perspective view of a microwave introducing means used in the plasma CVD apparatus shown in FIG. 2, and FIG. 3B is a sectional view taken along the line AA in FIG. is there. In FIG. 3, reference numerals 205 and 206 denote an endless annular waveguide and a microwave introduction unit as described above. The microwave introduction unit 206 has a microwave generating means such as a tuner directional coupler and an isolator. And a microwave power supply and the like.

The endless annular waveguide 205 used in the present invention has an inner wall 205-1 and an outer wall 205-2, and a predetermined gap 205 between the inner wall 205-1 and the outer wall 205-2.
-3. A perforation (slot) 301 for supplying microwaves to the plasma chamber is provided on the inner wall of the annular waveguide.

Then, the plasma CVD configured as described above
For example, when a SiNx film is formed using the apparatus, the plasma chamber 201 and the film formation chamber 202 are evacuated by a vacuum pump, and then N ₂ gas is introduced into the plasma chamber 201 from the gas introduction unit 207 as a reaction gas. And S as a source gas in the film forming chamber 202.
While introducing iH ₄ , the microwave is introduced from the microwave introduction means 206 into the endless annular waveguide, and the microwave is introduced into the plasma chamber 201 through the slot provided in the inner wall of the waveguide. In the chamber 201, plasma mainly derived from N ₂ gas can be generated, and in the film forming chamber, SiH ₄ gas receives the energy of the plasma and is ionized.
A SiNx film can be formed on a substrate.

In the present invention, the structure of the microwave introducing means is such that the microwave introducing direction is orthogonal to the outer wall of the annular waveguide as shown in FIG.
The tubular waveguide and the microwave introduction section 206 may be arranged, or may be introduced in the tangential direction of the outer wall of the annular waveguide as shown in FIG. However, as shown in FIG. 3B, the tubular waveguide 205 and the microwave introduction unit 206 are arranged so that the microwave introduction direction is orthogonal to the outer wall of the annular waveguide, and The microwave introduced from the microwave introduction unit into the annular waveguide is divided into two parts, and the microwave is introduced into the annular waveguide 205 in both directions (see arrows E and F in FIG. 3B).
In the case where microwaves are propagated, an interference wave can be generated in the annular waveguide between the distributed microwaves, and the microwave intensity is usually weakest at a portion facing the microwave introduction portion. The microwave intensity can be compensated and uniform microwaves can be introduced into the plasma chamber, and a more uniform and high-quality inorganic dielectric film for an optical recording medium can be formed.

Here, as a method of distributing microwaves in two directions, for example, as shown in FIG. 3 (b), a triangular prism having a triangular cross section is used, and a microwave reflective material (for example, metal) is used. The distribution block 302 is placed on the inner wall 205-1 of the annular waveguide at a position where the microwave from the microwave introduction means 206 collides, or the inner wall 205-1 of the annular waveguide itself is such a distribution block. A method using an annular waveguide preformed into a shape that functions as

In this method, a distribution block having a shape capable of uniformly distributing microwaves, for example, a triangular prism having an isosceles triangular cross section and an apex angle sandwiched between two equal sides The distribution block disposed on the inner wall 205-1 is used so that the direction of the perpendicular line downward from the bottom coincides with the direction of introduction of microwaves from the microwave introduction means, and the apex angle projects in the direction of introduction of microwaves. When an endless annular waveguide that functions as described above or functions like this is used, the performance and uniformity of the formed inorganic dielectric film can be further improved. In this embodiment, it is preferable that the angle of the apex angle is 90 ° because the microwave introduced into the annular waveguide 205 can be efficiently interfered with each other. It is also preferable to make the length of the long side of the distribution block equal to the distance between the inner wall and the outer wall of the annular waveguide in order to improve the microwave use efficiency.

Here, the distribution block is not particularly limited as long as it has a microwave reflecting property as described above. For example, a metal or the like can be used. Alternatively, a glass distribution block whose surface is coated with chromium, Al, or the like can be used.

Next, the interval (d) between the plurality of slots 301 provided on the inner wall of the endless annular waveguide used in the present invention.
Is limited as long as a microwave capable of achieving a plasma density (for example, 10 ¹¹ / cm ³ or more, particularly 10 ¹² / cm ³ or more) required for forming an inorganic dielectric film can be introduced into a plasma chamber. For example, when the endless annular waveguide is configured using the distribution block as described above, the interval (d) between the slots is set to the value of the microwave interference wave generated in the endless annular waveguide. It is preferable to set it to の of the guide wavelength or an integral multiple thereof so that the slot portion matches the antinode.

That is, according to this configuration, a high-quality inorganic dielectric film for an optical recording medium can be uniformly formed over a large area, which is extremely effective in reducing the manufacturing cost of the optical recording medium.

Next, the shape of the slot 301 provided in the microwave introduction device of the present invention is not limited to rectangular, circular, polygonal, iron array type, star shape, even if the long side is parallel or inclined to the traveling direction of microwave. Any type can be adopted as long as microwaves can be introduced from the slot. However, in consideration of efficient introduction and easy adjustment of the leak rate, a shape whose long side is perpendicular to the traveling direction of the microwave is preferable, for example, 40 mm to 60 mm × 1.
A rectangular shape having a size of 5 mm to 5 mm is optimal.

Next, the length (l) of the slot 301 defines the leak rate of the microwave from each slot, and can also be a factor for controlling the density of the plasma generated in the plasma chamber. Then, the value thereof depends on the power of the microwave introduced through the microwave introduction means, the state of the microwave in the annular waveguide, and the plasma density in the plasma chamber in accordance with the position of the slot. More specifically, when the ratio of the inner circumferential length to the guide wavelength of the annular waveguide 205 is large, the microwave is propagated by a larger wave number to introduce the microwave into the annular waveguide 205. It is preferable to allow sufficient microwaves to leak from the slot located at the position facing the portion, and for that purpose, it is desirable to shorten the length of each slot to reduce the leak rate.

When the ratio of the inner circumferential length to the guide wavelength of the annular waveguide 205 is small, the amount of microwave leakage from the slot at the position facing the microwave introduction portion of the annular waveguide is not excessively large. It is preferable to increase the leak rate by lengthening each slot.

More specifically, when the ratio of the inner circumferential length to the guide wavelength of the annular waveguide is 3 to 24 times, the optimum length of the slot is 1/4 to 3/8 of the guide wavelength. A high-quality inorganic dielectric film for an optical recording medium can be formed uniformly over almost the entire area of a film forming chamber, which is preferable for further reducing the manufacturing cost of the optical recording medium.

When the apparatus according to the present embodiment is used as described above, it is possible to form a substantially uniform and high-quality inorganic dielectric film for an optical recording medium regardless of the position of the substrate in the chamber. Can be particularly suitably used in an in-line type film forming apparatus as shown in FIG. 1 for manufacturing an optical recording medium while continuously or intermittently transporting.

In the present invention, the material of the endless annular waveguide is not particularly limited, but it is preferable that the inner wall and the outer wall have a structure capable of suppressing microwave propagation loss. For example, metals and alloys such as Cu, Al, Fe, and Ni, various glasses, quartz, silicon nitride, alumina, acryl, polycarbonate, polyvinyl chloride,
Al, W, Mo, Ti, T on insulators such as polyimide
a, Cu, Ag, etc. can be used as long as they have sufficient mechanical strength and the surface is covered with a conductive layer to prevent microwave penetration, such as those coated with a metal thin film. A configuration in which the waveguide is made of stainless steel, the inner surface of the waveguide is coated with copper, and further coated with silver can be suitably used.

The shape of the endless annular waveguide used in the present invention may be polygonal or other depending on the shape of the plasma chamber. Regarding the cross-sectional shape of the air gap in the annular waveguide, any shape can be adopted as long as the microwave can propagate, and the shape may be any shape, such as a circle, a semicircle, or another shape. Further, it is preferable to set the inner circumferential length of the tube to be approximately an integral multiple of 3 to 24 times the microwave wavelength in the tube in order to make the plasma introduced into the plasma chamber uniform.

In order to generate a magnetic field inside the plasma chamber, especially near the inner wall of the plasma chamber by arranging a magnet or the like on the surface of the inner wall of the endless annular waveguide facing the plasma chamber, it is necessary to apply a force to the inner wall of the plasma chamber. This is preferable in that the adhesion of the inorganic dielectric film can be suppressed and the film formation efficiency is improved.

It is preferable to provide some cooling means on the annular waveguide in order to prevent the inner surface of the waveguide from being heated and oxidized by the microwave. As the cooling unit, for example, an air cooling unit, a water cooling unit, or the like can be used. Further, in the above embodiment, the slot provided on the inner wall of the annular waveguide is described as a perforated hole. However, the present invention is not limited to such an embodiment, and a configuration in which a microwave-permeable dielectric window is provided is not limited to such an embodiment. It may be.

Next, FIG. 6A shows a plasma C which can be used for forming an inorganic dielectric film in the method for manufacturing an optical recording medium of the present invention.
FIG. 4 is a schematic perspective view showing another embodiment of the VD apparatus. This embodiment is characterized in that the plasma chamber has a rectangular shape and an endless annular waveguide is arranged around the plasma chamber.

In FIG. 6A, reference numeral 601 denotes an endless annular waveguide containing a plasma chamber, and 602 denotes a film forming chamber 603 disposed vertically below the plasma chamber. This is a microwave introduction unit. Reference numerals 604 and 605 denote, for example, a transfer path of the disk substrate 100, 611 denotes a gas introduction unit to the plasma chamber, and 612 denotes a gas introduction unit to the film formation chamber.

FIG. 6B is a sectional view taken along the line BB of the CVD apparatus of FIG. 6A, and FIG. 6C is a sectional view taken along the line CC of FIG. 6A.

6B and 6C, 606 is a plasma chamber made of, for example, quartz, and 607 is an inner wall of an endless annular waveguide, and slots 608 are provided at predetermined intervals. . Reference numeral 609 denotes a distribution block for distributing microwaves introduced from the plasma introduction unit 603 in the direction of arrow 610 in both directions in the endless annular waveguide.

In the same manner as described above, the formation of the inorganic dielectric film using the plasma CVD apparatus having the above-described structure is performed by using a vacuum pump (not shown) in the plasma chamber and the film forming chamber, for example, at 1 × 10 ⁻⁴ Pa. After evacuating to a degree, the gas introduction means 611 and 612 or the gas introduction means 6
While introducing gas from 11 and adjusting to the desired pressure,
This can be performed by supplying a microwave having a desired power from a microwave power supply into the annular waveguide.

Even when such a rectangular plasma chamber and a film forming chamber are used, the endless annular waveguide, particularly the endless annular waveguide having the distribution block, is disposed in the film forming chamber. A high-quality inorganic dielectric film for an optical recording medium can be formed to a uniform thickness on each of the substrates thus formed. Therefore, even when a plurality of substrates are to be simultaneously formed, the size of the plasma chamber and the film formation chamber only needs to be a size capable of accommodating the plurality of substrates, and the film formation efficiency can be improved. .

As described above, when a rectangular endless annular waveguide is used, the vertical reflection at the right angle portion 613 in the annular waveguide is promoted as shown in FIG. It is preferable to provide a reflection block 613 that improves the propagation efficiency of the light.

The reflection block 614 has, for example, a right-angled isosceles triangle in cross section, and the length (k) of a long side serving as a reflection surface is twice the width (W) of the outer and inner walls of the annular waveguide. It is preferable from the viewpoint of improving the propagation efficiency that the two are disposed so that two equal sides thereof are in contact with the right-angled portions 613, respectively.

FIG. 7A and FIG. 7B, which is a sectional view taken along the line DD, show still another embodiment of a plasma CVD apparatus which can be used in the method of manufacturing an optical recording medium according to the present invention.
Is characterized in that the film forming chamber is integrated with the plasma chamber in the CVD apparatus shown in FIG.

7A and 7B, 701 is an endless annular waveguide, 702 is a microwave introduction part, 703 is an inner wall of the annular waveguide, 704 is a slot provided in the inner wall, and 7
Reference numeral 05 denotes a plasma chamber serving also as a film forming chamber,
707 is a distribution block, 707 is a reflection block, and 707 is
Is a gas introduction means.

The method of manufacturing an inorganic dielectric film using this apparatus is the same as that described above, but the CVD apparatus of this embodiment uses, for example, a single gas such as a Si-based semiconductor film as described later. It is preferably used for forming an inorganic dielectric film that can be formed.

The gas used to form the inorganic dielectric film for an optical recording medium by the plasma CVD method of the present invention is, for example, an inorganic dielectric film such as a-Si or Si.
When a Si-based semiconductor film such as C is formed, as a source gas containing Si, for example, inorganic silanes such as SiH ₄ and SiH ₆ , tetraethylene silane (TES), tetramethyl silane (TMS), dimethyl silane (DMS) ), SiF ₄ , Si ₂ F ₆ , SiHF
₃ , SiH ₂ F ₂ , SiCl ₄ , Si ₂ Cl ₆ , SiH
Cl ₃ , SiH ₂ Cl ₂ , SiH ₃ Cl, SiCl ₂ F
It is preferable to use at least one of a halosilane such as _2, which is in a gaseous state at normal temperature and normal pressure, or a substance which easily gasifies.
When forming a Si compound-based film such as x, SiO, and SiO _2, as a source gas containing Si atoms, for example, S
inorganic silanes such as iH ₄ and SiH ₆ , tetraethoxysilane (TEOS), tetramethoxysilane (TMO)
S), Octamethylcyclotetrasilane (OMCTS)
Organic silanes such as SiF ₄ , Si ₂ F ₆ , SiHF
₃ , SiH ₂ F ₂ , SiCl ₄ , Si ₂ Cl ₆ , SiH
Cl ₃ , SiH ₂ Cl ₂ , SiH ₃ Cl, SiCl ₂ F
_{As a} reaction gas with halosilanes such as ₂ , which are in a gaseous state at normal temperature and normal pressure, or easily gasified
For example, NH ₃ , N ₂ H ₄ , hexamethyldisilazane (HM
DS), O ₂ , O ₃ , H ₂ O, NO, N ₂ , O, NO ₂
And the like are preferably selected and used.

As the inorganic dielectric film, AlN, Al ₂ O
₃ , when forming a thin film of a metal compound such as TiO ₂ or Ta ₂ O _{5 As} a raw material gas containing metal atoms, trimethyl aluminum (TMAl), triethyl aluminum (TEAl), triisobutyl aluminum (TIBA)
l), dimethyl aluminum hydride (DMAl
H), organic metals such as AlCl ₃ , TiCl ₃ , Ta
Metal halide such as Cl ₅ and O as a reaction gas
_{2, O 3, H 2 O} , NO, N 2, O, NO 2, N 2, N
H ₃ , N ₂ H ₄ , hexamethyldisilazane (HMDS)
It is preferable that these are appropriately selected and used.

As described above, when two kinds of raw material gas and reactive gas are used for forming the inorganic dielectric film, as shown in FIG. 3, the plasma chamber 101 and the film forming chamber 10 are used.
It is preferable to introduce a reaction gas and a source gas into each of the components 2 and 2; in particular, the reaction gas is introduced into the plasma chamber 101 from the gas introduction unit 207, and the source gas is introduced into the film formation chamber 102 from the gas introduction unit 208 When introduced, the internal stress in the optical recording medium-like inorganic dielectric film formed on the substrate can be further reduced, and the inorganic dielectric film that provides a high-quality optical recording medium can be extremely efficiently used. Can be manufactured well.

Next, to describe the conditions for forming the inorganic dielectric film for an optical recording medium using the plasma CVD apparatus according to the present invention for various embodiments described above, the frequency 300MH _Z is a microwave usable in the present invention a wave range of 300GH _Z, in particular electromagnetic radiation of 2.45 GHz _Z can be suitably used.

The input power from the microwave power source varies depending on the circumference of the annular waveguide and the type of reaction gas and / or raw material gas. 1250 mm and this length is
When the length of the slot is 3 to 24 times the guide wavelength, and the slot length is 1/4 to 3/8 of the guide wavelength, and when inorganic silanes, organic silanes, or halosilanes are used as the raw material gas. 0.5 to 5.0 kW, especially 1.0 to 2.5
kw, and the total pressure of the raw material gas or the reaction gas in the plasma generation container and / or the process container or the mixed gas thereof is 0.5 to 5 Pa, particularly 0.5 to 2 Pa. It is preferable to form a film.

Next, in the manufacturing method of the optical recording medium according to the present invention, except for the step of forming the inorganic dielectric film according to the features of the present invention by the plasma CVD method,
For example, the order of the step of forming the inorganic dielectric film and the step of forming the optical recording film is not limited to the order of the in-line process shown in FIG. May be sequentially formed according to the following.

For the step of forming the recording film, a known film forming method suitable for the characteristics of the material used for the recording film may be used, and specific examples include vapor deposition, sputtering, and wet coating.

In the present invention, any optical recording film capable of recording and reproducing information by irradiating a light beam can be used without particular limitation.
In particular, an amorphous magnetic film containing a rare earth and / or transition metal, for example, Tb-Fe-Co, Gd-Fe-Co, Tb
An amorphous magnetic film containing a rare earth and / or transition metal such as Fe-Co-Cr or Gd-Fe-Co-Cr, a magneto-optical recording film having a laminated film thereof, or a chalcogenide element such as Te. Since the recording film is highly corrosive, the inorganic dielectric film is required to have particularly excellent protection performance of the recording layer, so that the effects of the method for manufacturing an optical recording medium of the present invention can be more effectively exerted. This is preferable in that it can be performed.

In the optical recording medium according to the present invention, the thickness of the inorganic dielectric film is set according to the material and configuration of the recording layer and the characteristics of the inorganic dielectric film. In the configuration in which two layers of inorganic dielectric films are arranged so as to sandwich the magneto-optical recording film as shown in (1), protection of the recording layer and enhancement of the Kerr rotation angle during signal reproduction are performed. In the case of the substrate and the inorganic dielectric film of the magneto-optical recording film, 100 to 1500
About Å, and 1 for inorganic dielectric film on magneto-optical recording film
It is preferable to set it to about 00 to 1000 °.

If necessary, a protective layer may be provided on the recording layer, the inorganic dielectric film, or the reflective layer of the optical recording medium obtained by the method for producing an optical recording medium of the present invention. Good.

In this case, the protective layer is formed, for example, by applying a photocurable resin on the recording layer so as to have a predetermined thickness (for example, 10 to 30 μm) and then irradiating with light to cure the recording layer. Resin sheet (for example, polycarbonate resin sheet, polyester resin sheet, etc.)
Can be formed by adhering on a recording layer, an inorganic dielectric film, or a reflective layer with an adhesive or a pressure-sensitive adhesive, and in particular, using a resin sheet molded in advance to a predetermined thickness for the protective layer. Is particularly preferable in the present invention because it can prevent the internal stress of the protective layer from deforming the optical recording medium.

As the substrate of the optical recording medium according to the present invention, those generally used as substrates for optical recording media can be used. For example, glass, bisphenol-based polycarbonate resin, other modified polycarbonate resin, acrylic resin A substrate containing a resin or an amorphous polyolefin resin can be used.

[0061]

The present invention will be described in more detail with reference to the following examples.

(Example 1) Outer diameter 86 mmφ, inner diameter 15 m
Donut-shaped polycarbonate resin with mφ, thickness 1.2 mm, spiral pre-groove having a width of 0.6 μm and a pitch of 1.6 μm and a depth of 800 ° on one surface (trade name: Iupilon H4000; Mitsubishi Gas Chemical Co., Ltd.) )
A 72 nm thick amorphous silicon (a-Si: H) film as a first dielectric film and a 10 n thick recording layer on a surface of a disk substrate made of
m, a laminated film of a Gd-Fe-Co amorphous magnetic layer having a thickness of 20 m and a Tb-Fe-Co amorphous magnetic layer having a thickness of 20 nm, an a-Si: H film having a thickness of 30 nm as a second dielectric layer, and reflection. A magneto-optical disk in which an Al film having a thickness of 60 nm was sequentially laminated as a layer was formed by the following method.

That is, first, the in-line type film forming apparatus shown in FIG. 1 was prepared. In the film forming apparatus, a plasma CVD film forming apparatus was disposed in the first and second a-Si: H film forming chambers 103 and 105 as shown in FIG.

In the plasma CVD film forming apparatus used here, the plasma chamber 201 has a cylindrical shape with an outer diameter of 326 mm, an inner diameter of 320 mm, and a length of 115 mm, and an outer diameter of 326 mm and an inner diameter of
A cylindrical process chamber 202 having a length of 320 mm and a length of 210 mm was connected so that the central axes of the process chambers coincided with each other.

The annular waveguide 205 has a width (W) of 27 mm, a height (H) of 96 mm, and a width (W) of 96 mm, the same as that of the WRT-2 standard waveguide. ), Having a center diameter of 354 mm, made of stainless steel, and having a copper coating on the inner surface of the waveguide and a silver coating thereon to suppress microwave propagation loss, and having a 42 mm length and a 4 mm width on the inner wall. Rectangular slot 3
A number of 01 were provided at about 40 mm intervals.

A distribution block made of Al having a cross section of a right-angled isosceles triangle and a long side width of 27 mm, which is the same as the width of the gap of the waveguide 205, is used for introducing microwaves into the inner wall of the annular waveguide. Microwaves were attached (opposite) to opposing positions so as to be evenly distributed.

Next, the substrate holder 107 in which three disk substrates 100 are mounted in a line is loaded into the substrate loading chamber 101 of the in-line type film forming apparatus having the above-described a-Si: H film forming chamber. Next, the substrate was transferred to the degassing chamber 102 and degassed, and then transferred to the first a-Si: H film forming chamber 103 to form a first a-Si: H film.

The film forming conditions of a-Si: H are as follows. The inside of the plasma chamber 201 and the film forming chamber 202 is evacuated to 10 ⁻⁴ Pa using a vacuum pump, and then Ar gas is supplied from the gas introducing means 207 to the plasma chamber. 2 in
The gas was introduced at a flow rate of 00 SCCM, and SiH ₄ gas was introduced from the gas introduction means 208 into the process vessel at a flow rate of 500 SCCM, and the pressure in the plasma chamber and the film formation chamber was adjusted to 1.3 Pa.

Next, a frequency of 2.45 G was supplied from the microwave power source.
A microwave with a frequency of 1.5 kW and a power of 1.5 kW was introduced into the annular waveguide through a microwave introduction part to form an a-Si: H film. The wavelength in the waveguide at this time is 159 m
m. As a result, the first a-Si: H having a thickness of 72 nm is formed.
The film was formed in about 5 to 6 seconds, and the deposition rate of the a-Si: H film was about 800 nm / min. The temperature of each substrate immediately after the film formation was about 50 ° C.

After the formation of the first a-Si: H film, the substrate is transported to the recording layer film formation chamber, and the Gd—Fe—Co film and the Tb
-The Fe-Co film was formed by a sputtering method.

The sputtering target was 1
A GdFeCo alloy target having a thickness of 50 mm × 470 mm and a thickness of 6 mm or a TbFeCo alloy target of the same size was used. The conditions for RF sputtering were that the inside of the chamber was evacuated to 1 × 10 ⁻⁵ Pa, and then Ar was exhausted.
Gas pressure 0.1 Pa, power density 5.6 W / cm ²
Was sputtered.

After the formation of the recording layer, the substrate was treated with 2a-Si:
The a-Si: H film was formed under the same conditions as those for forming the first SiNx film after being transported to the H film formation chamber 105. Therefore the second
The deposition time of the a-Si: H film was 2-3 seconds.

Next, the substrate was transferred to a film forming chamber for a reflective film, and an Al reflective film was formed by a sputtering method. As a sputtering target, an Al target having a thickness of 150 mm × 470 mm and a thickness of 6 mm was used. As the conditions of RF sputtering, the inside of the chamber was evacuated to 1 × 10 ⁻⁵ Pa, the pressure of Ar gas was 0.3 Pa, and the power density was 5 Pa. Sputtering was performed at 7 W / cm ² .

Next, the three substrates on which the film formation has been completed are taken out from the in-line type film forming apparatus, and a polystyrene-polybutadiene block copolymer (trade name: Califlex, TR1107; Shell Chemical Co., Ltd.) is placed on the Al reflective film. 10)
A rubber-based pressure-sensitive adhesive comprising 0 parts by weight, 50 parts by weight of modified wood rosin, and 1 part by weight of a stabilizer is applied to a thickness of 2 μm, and a 6 μm-thick urethane acrylate-based UV-curable resin is applied on the pressure-sensitive adhesive layer. Films obtained by curing the above were laminated to produce a magneto-optical disk.

The C / N ratio and the defect occurrence rate of the three magneto-optical disks of the same lot thus obtained E. FIG. R. Was measured and evaluated for the initial value and the value after being left for 1500 hours under the conditions of 80 ° C. and 85% RH.

The C / N ratio and BER are measured by using a magneto-optical disk recording / reproducing inspection apparatus (trade name, L
N52A; manufactured by Shibasoku Co., Ltd.) to record information and reproduce the information for measurement.

However, recording and reproducing conditions were as follows.

Linear velocity: 9.04 m / sec Recording frequency: 6 MHz Recording power: 10 mW Reproduction power: 1 mW Recording / reproduction light wavelength: 830 nm

A tilt angle measuring device (trade name: LM-10) for the tilt angle of the magneto-optical disk prepared in this manner.
0; manufactured by Ono Sokki Co., Ltd.).

Table 1 shows the results. Table 1
In the evaluation of the C / N ratio after the durability test, the change amount before and after the durability test was 3
A case of not less than dB was A, a case of 3 to 8 dB was B, and a case of exceeding 8 dB was C.

B. E. FIG. R. As for A, the case where the value after endurance had the same order as the initial value was evaluated as A, the case where the order decreased by one digit, as B, and the case where the order decreased by two or more digits as C.

Further, the case where the tilt angle was within 5 mrad was evaluated as A, and the case where the tilt angle exceeded 5 mrad was evaluated as B.

The stress and the refractive index of the 1a-Si: H film formed by the above-mentioned plasma CVD method were measured according to the following methods.

That is, an a-Si: H film was formed on a glass disk having a diameter of 30 mm and a thickness of 1.0 mm for stress measurement under exactly the same film forming conditions as described above, and the deformation of the substrate was measured. The number of Newton rings is detected using an interferometer. Here, assuming that the number of Newton rings is m, the radius of curvature γ of the substrate can be obtained by the following equation.

Γ = a ² / mλ a: radius of the substrate λ: wavelength of the light source used by the interferometer When the value of γ is substituted into the following equation, the stress σ of the first SiN film is obtained.

[0086] ^{σ = Eb 2/6 (1} -ν) γd ... E: Young's modulus of the substrate [nu: Poisson's ratio of the substrate gamma: curvature of substrate radius d: thickness of SiNx film b: thickness of the substrate

The refractive index of the first a-Si: H film was calculated from the reflectance of the spectral characteristics of the sample formed on the glass substrate.
The reflectance at zero point was measured, and the average value of the refractive index calculated from the reflectance was defined as the refractive index of the sample.

Further, in order to measure the thickness unevenness of the first a-Si: H film formed by the plasma CVD method, three glass disks having a diameter of 86 mm and a thickness of 1.2 mm were prepared. Then, an a-Si: H film having a thickness of 72 nm is simultaneously formed in exactly the same manner as in the above-mentioned plasma CVD method, and a region surrounded by a circle having a radius of 24 mm and a circle having a radius of 40 mm (light (Corresponding to the effective area of the magnetic disk)), the film thickness of the a-Si: H film at arbitrary 20 places was measured. AA indicates that the film thickness at all the measurement points is within ± 2.5% of the reference thickness, and ± (the film thickness at any of the measurement points is relative to the reference thickness). 2.5%
A in the case of exceeding ± 3% and exceeding B, and B in the case where the film thickness at any one of the measuring points exceeds ± 3% and within ± 5% with respect to the reference thickness. The film thickness distribution was evaluated as C when the film thickness exceeded ± 5% with respect to the reference thickness.

Further, a diameter of 86 mm and a thickness of 1.2 m are newly added.
m polycarbonate resin (trade name: Iupilon H40)
00; manufactured by Mitsubishi Gas Chemical Co., Ltd.)
A 200 nm thick a-layer was prepared on the three substrates by the plasma CVD method in exactly the same procedure as described above.
An Si: H film was simultaneously formed, and the adhesion of the obtained film to the substrate was measured by a cross hatch test.

In the cross hatch test, first, a square of 3 mm square was formed on the dielectric film on the substrate by a cutter knife for a total of 2 squares.
A cut was made so that five pieces were formed, and an adhesive tape having an adhesion force of 2 kgf / cm was attached to this portion, and the tape was peeled off perpendicular to the film surface. This test was performed at any six locations on one disk.

Table 1 shows the results.

The evaluation criteria were as follows.

A: Dielectric film was not peeled at all six places where the cross hatch test was performed. B: Peeling of 1 to 3 squares occurred in at least one of the six places where the cross hatch test was performed. C: Cross Peeling of more than 3 squares occurred in at least one of the six locations where the hatch test was performed

(Comparative Example 1) 1a-S used in Example 1
As shown in FIG. 8, a waveguide 801 for introducing a microwave from one end of a plasma chamber into a plasma chamber 803 using a film forming apparatus 103 and 105 for forming an i: H film and a 2a-Si: H film. Cyclotron resonance (E) provided with a coil 802 for generating electron cyclotron resonance in the
Example 1 except that CR) was replaced with a plasma CVD film forming apparatus.
In the same manner as described above, three magneto-optical disks were simultaneously produced.

In this comparative example, the conditions for forming the a-Si: H film are such that the internal stress of the a-Si: H film is within the range of the stress (0) allowed for the inorganic dielectric film for a magneto-optical disk. ~ -3
0 kg / mm ² ), specifically, a microwave having a frequency of 2.45 GHz is introduced from the waveguide 801 into the plasma chamber 803, and is subjected to electron cyclotron resonance by a coil 802 disposed outside the container. A satisfying magnetic field of 875 gauss was generated in the vessel.

The microwave power was 500 W, the gas flow rate was 10 SCCM for SiH ₄ and 30 S for Ar.
The gas pressure in the plasma chamber 803 and the film forming chamber 804 was adjusted to 1.0 Pa. Note that the plasma chamber 803 and the film forming chamber 804
Example 1 was the same as the method for arranging the substrates.
The internal stress of the a-Si: H film thus formed is -30 k
g / mm ² or less.

The magneto-optical disk thus produced was evaluated in the same manner as in Example 1. As a result, it was impossible to evaluate any of the three substrates other than the disk produced from the substrate arranged at the center.

The a-S obtained by the method of this comparative example
As a result of observing the characteristics of the i: H film in the same manner as in Example 1, as shown in Table 1, it was found that a dielectric film having a predetermined thickness could be uniformly formed in the substrate among the three substrates. It is recognized that there is unevenness in the thickness of the dielectric film between the substrates even if the substrates are of the same lot because only one substrate is disposed at the center. Other than the prepared dielectric film did not deserve evaluation.

A magneto-optical disk made from a substrate disposed at the center of a chamber in which a dielectric film having a uniform film thickness is formed, when stored under high-temperature and high-humidity conditions, the C / N ratio is greatly reduced. And B. E. FIG. R. A significant rise was observed.
Furthermore, the film formation rate was about 60 nm / min.

[0100]

[Table 1]

(Example 2) The structure of the magneto-optical disk in Example 1 was as described below, and the conditions for forming the first and second dielectric films were also as follows. A magneto-optical disk was produced in the same manner as in Example 1. The magneto-optical disk thus produced was evaluated in the same manner as in Example 1. The characteristics of the Si ₃ N ₄ film formed by this method were also evaluated in the same manner as in Example 1. Table 2 shows the results.

[0102]

[Table 2]

(Comparative Example 2) First Si ₃ used in Example ₃
N ₄ film and second Si ₃ N ₄ film forming apparatuses 103 and 10
8 is a means 8 for introducing microwaves into the plasma chamber from one end of the plasma chamber as shown in FIG.
01 and three magneto-optical disks were prepared in the same manner as in Example 3 except that an electron cyclotron resonance (ECR) plasma CVD film forming apparatus provided with a coil 802 for generating electron cyclotron resonance in plasma in the chamber was used. Created at the same time.

[0104] Note that as the film formation conditions of the Si ₃ N ₄ film At a present comparative example, the Si ₃ N ₄ film stress range 0 to-30kg of the internal stress is allowed to inorganic dielectric film for a magneto-optical disk
/ Mm ² , specifically, a frequency of 2.4
A microwave of 5 GHz was introduced from the waveguide 801 into the plasma chamber 803, and a magnetic field of 875 gauss satisfying the electron cyclotron resonance condition was generated in the container by the coil 802 disposed outside the chamber.

The microwave power was 650 W and the gas flow rate was 10 SCCM for SiH ₄ and 30 S for N ₂ .
The gas pressure in the plasma chamber 803 and the film forming chamber 804 was adjusted to 1.0 Pa. The plasma chamber 803 and the film forming chamber 80
The configuration of Example 4 and the method of arranging the substrates were the same as in Example 1.

The magneto-optical disk thus produced was evaluated in the same manner as in Example 1. As a result, it was impossible to evaluate any of the three substrates other than the disk produced from the substrate arranged at the center.

The Si ₃ obtained by the method of this comparative example
As a result of observing the characteristics of the N ₄ film in the same manner as in Example 1, as shown in Table 1, a dielectric film having a uniform film thickness was formed in the substrate at the center of the three substrates. It was recognized that there was unevenness in the thickness of the dielectric film between the substrates even if the substrates were of the same lot, and the dielectric film was formed on the substrate arranged at the center of the three substrates. Other than the body membrane did not deserve evaluation.

A magneto-optical disk formed from a substrate disposed at the center of a chamber in which a dielectric film having a uniform thickness is formed, when stored under high temperature and high humidity conditions, the C / N ratio is greatly reduced. And B. E. FIG. R. A significant rise was observed.
Furthermore, the film formation rate was about 60 nm / min.

[0109]

[Table 3]

(Examples 3 to 8) Example 1 was repeated except that the configuration of the magneto-optical disk and the conditions for forming the first and second dielectric films in Example 1 were as shown in Table 3. A magneto-optical disk was prepared and evaluated in the same manner as described above.

The characteristics of the inorganic dielectric film formed under each film forming condition were also evaluated in the same manner as in Example 1. Table 4 shows the results.

[0112]

[Table 4]

(Example 9) A phase change type recording medium was formed in the same manner as in Example 3 except that a recording film made of an Sb-Te alloy was formed by magnetron sputtering instead of the magneto-optical recording film of Example 3. I made an optical disk. The characteristics of this optical disk were evaluated in the same manner as in Example 3.

Table 4 shows the results.

The C / N ratio of the optical disk of this embodiment and the B.N. E. FIG. R. Is measured using an optical disk evaluation device (product name:
OMS-2000; manufactured by Nakamichi Co., Ltd.).

[0116]

[Table 5]

(Embodiment 10) Five magneto-optical disks having the same configuration as that of the magneto-optical disk prepared in Embodiment 4 were used.
Simultaneous preparation was performed using the inorganic dielectric film forming apparatus shown in FIG.

The film forming apparatus shown in FIG. 6 used in this embodiment has a length of 532 mm in the substrate transport direction, a height of 144 mm,
A plasma chamber having a width of 182 mm, a film forming chamber having a length of 526 mm, a width of 182 mm, and a height of 100 mm are used.
m, a height of 96 mm, and a shape whose inner wall was substantially in close contact with the outer wall of the plasma chamber was used.
The inner surface of the waveguide was coated with copper and then with silver. In addition, the waveguide inner wall 607 has a length of 42.
mm, 3 mm wide rectangular slots at 40 mm intervals
0 pieces were arranged.

A distribution block made of Al having a right-angled isosceles triangular cross section and a long side length of 27 mm was placed at a position facing the microwave introduction portion on the inner wall of the annular waveguide. Were welded so as to be evenly distributed in both directions.

The reflection plate made of Al having a right-angled isosceles triangle in cross section and a short side length of 27 mm was used as shown in FIG. 6 (b).
As shown in the figure, the annular waveguide was attached to each corner of the inner wall by welding.

The conditions for forming the first and second Si ₃ N ₄ films were as follows.

Gas type SiH ₄ , N ₂ Vacuum exhaust pressure 1 × 10 ⁻⁴ Pa Gas pressure 1.3 Pa Flow rate SiH ₄ : 200 SCCM N ₂ : 1000 SCCM Input power 1.5 kW Frequency 2.45 GHz

For the SiH ₄ gas, gas introduction means 6
12 into the film formation chamber, N ₂ gas is introduced from the gas introduction means 611 into the plasma chamber, and Si _{3 is} deposited on the substrates arranged in a line in the substrate transfer direction in the film formation chamber.
An N ₄ film was formed.

In the present invention, a magneto-optical disk was prepared in the same manner as in Example 4 except for the method of forming the first Si ₃ N ₄ film and the second Si ₃ N ₄ film. The magneto-optical disk thus prepared was evaluated in the same manner as in Example 1, and the characteristics of the Si ₃ N ₄ film obtained by the method of this embodiment were evaluated in the same manner as in Example 1. The results are shown in Table-5.

(Embodiment 11) In the tenth embodiment, the SiH
_A magneto-optical disk was produced in the same manner as in Example 10, except that the _four gases and the N ₂ gas were mixed and introduced into the plasma chamber from the gas introduction means 611.

The magneto-optical disk thus obtained was evaluated in the same manner as in Example 1, and the characteristics of the SiH ₄ film obtained by this method were evaluated in the same manner as in Example 1.

Table 5 shows the results.

[0128]

[Table 6]

[0129]

As described above, according to the present invention, an inorganic dielectric film for an optical recording medium having a low internal stress, an enhanced effect and an excellent recording layer protection performance can be formed by a conventional plasma CV.
Film formation can be performed at a speed significantly exceeding the film formation speed of method D, and a high-quality optical recording medium can be manufactured at low cost.

Further, according to the present invention, a uniform and high quality inorganic dielectric film for an optical recording medium can be formed irrespective of the position of the substrate in the film forming chamber, so that continuous production of the optical recording medium is extremely easy. Thus, the cost of a high-quality optical recording medium can be reduced.

[Brief description of the drawings]

FIG. 1 is a schematic diagram of an optical recording medium manufacturing apparatus according to the present invention.

FIG. 2 is a schematic diagram of an apparatus for forming an inorganic dielectric film of an optical recording medium according to the present invention. FIG. 1A is a schematic perspective view of an apparatus for forming an inorganic dielectric film. FIG. 2B is a schematic cross-sectional view of the film forming apparatus shown in FIG.

FIG. 3 is a schematic diagram of an endless annular waveguide of the film forming apparatus of FIG. 2; (A) A schematic perspective view of an endless annular waveguide of the film forming apparatus of FIG. FIG. 3B is a sectional view taken along line AA of FIG.

FIG. 4 is a schematic sectional view of an optical recording medium.

FIG. 5 is a schematic sectional view of another embodiment of an endless annular waveguide that can be used in the present invention.

FIG. 6 is an explanatory view of another embodiment of a film forming apparatus for forming an inorganic dielectric film for an optical recording medium according to the present invention. (A) A schematic perspective view of a rectangular inorganic dielectric film forming apparatus for an optical recording medium according to the present invention. (B) A sectional view taken along the line BB in FIG. (C) A sectional view taken along the line CC in FIG.

FIG. 7 is an explanatory view of another embodiment of the apparatus for forming an inorganic dielectric film for an optical recording medium according to the present invention. (A) A schematic perspective view of a rectangular inorganic dielectric film forming apparatus for an optical recording medium according to the present invention. FIG. 7B is a sectional view taken along line DD of FIG.

FIG. 8 is a schematic sectional view of a conventional apparatus for forming an inorganic dielectric film for an optical recording medium.

FIG. 9 is a schematic sectional view of one embodiment of an endless annular waveguide according to the present invention.

[Explanation of symbols]

 REFERENCE SIGNS LIST 100 Substrate 101 Substrate input chamber 102 Deaeration chamber 103, 105 Inorganic dielectric film deposition chamber 104 Recording film deposition chamber 106 Reflection film deposition chamber 107 Substrate unloading chamber 108 Substrate holder 201 Plasma chamber 202 Film deposition chamber 203 , 204 Substrate transport path 205 Annular waveguide 206 Microwave introduction part 207, 208 Gas introduction means 301 Slot 302 Distribution block 401 Recording film 402, 403 Inorganic dielectric film 404 Reflection film 601 Endless annular waveguide 602 Film forming chamber 603 Microwave introduction means 604, 605 Substrate transfer path 606 Plasma chamber 607 Endless annular waveguide inner wall 608 Slot 609 Distribution block 611, 612 Gas introduction means 614 Reflection block 701 Endless annular waveguide 702 Microwave introduction section 703 Endless Joshirubeha inner wall 704 slot 705 plasma chamber 706 distribution block 707 the reflective block

──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-3-69033 (JP, A) JP-A-3-66043 (JP, A) JP-A-3-162733 (JP, A) JP-A-63- 103088 (JP, A) JP-A-3-122271 (JP, A) JP-A-5-334582 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) G11B 7/26 C23C 16 / 00-16/56

Claims (28)

(57) [Claims] 1. A method of manufacturing an optical recording medium having a laminated film of a recording film and an inorganic dielectric film on a substrate, comprising: forming the recording film on the substrate; Forming a film by a microwave plasma CVD method performed using a microwave plasma processing apparatus, wherein the microwave plasma processing apparatus is disposed so as to surround the plasma chamber, gas introducing means, and the plasma chamber. The endless annular waveguide includes an inner wall, an outer wall, a gap formed by the inner wall and the outer wall, and a microwave introduction unit that introduces microwaves into the gap. A method for manufacturing an optical recording medium, wherein a plurality of slots for supplying microwaves to the plasma chamber are provided on the inner wall at predetermined intervals. 2. The method for manufacturing an optical recording medium according to claim 1, wherein said microwave plasma processing apparatus further comprises a film forming chamber. 3. The method for manufacturing an optical recording medium according to claim 2, wherein said film forming chamber includes a gas introducing means. 4. The method for manufacturing an optical recording medium according to claim 1, wherein said plurality of slots are provided at an interval corresponding to a half of a guide wavelength of a microwave introduced into said annular waveguide. 5. The method for manufacturing an optical recording medium according to claim 1, wherein the microwave introduction section is arranged so that the microwave is introduced toward the center of the annular waveguide. 6. A distribution for distributing the microwave to a portion of the outer peripheral surface of the inner wall where the microwave introduced from the microwave introduction portion first collides, and propagating the microwave to both sides in the annular waveguide. 6. The method for manufacturing an optical recording medium according to claim 5, comprising a block. 7. The method for manufacturing an optical recording medium according to claim 2, wherein a magnetic field generating means is arranged near the slot on the inner peripheral surface of the inner wall of the annular waveguide. 8. The method for manufacturing an optical recording medium according to claim 1, wherein said inorganic dielectric film is formed by a reaction of a plurality of gases. 9. The method for producing an optical recording medium according to claim 8, wherein the plurality of types of gases include a reaction gas and a source gas. 10. An apparatus further comprising a film forming chamber provided with a gas introducing means as said microwave plasma processing apparatus, wherein said reaction gas is supplied to said plasma chamber from said gas introducing means of said plasma chamber. 10. The method of manufacturing an optical recording medium according to claim 9, wherein a source gas is supplied to the film forming chamber from a gas introducing means of the film forming chamber, and the reaction gas and the source gas are reacted in the film forming chamber. 11. A raw material gas comprising at least one gas selected from inorganic silanes, organic silanes, and halosilanes, and O ₂ , O ₃ , H ₂ O, N
_{O, N 2 O, NO 2} , N 2, NH 3, N 2 H 4 and SiNx using at least one selected from hexamethyldisilazane, SiO or
The inorganic dielectric film containing SiO ₂ is formed.
3. The method for producing an optical recording medium according to claim 1. 12. The method according to claim 11, wherein the inorganic silane is SiH ₄ or SiH ₆ . 13. The method according to claim 11, wherein the organic silane is tetraethoxysilane, tetramethoxsilane or octamethylcyclotetrasilane. 14. The method according to claim 14, wherein the halosilane is SiF ₄ , Si ₂ F ₆ , SiH
₂ F ₂ , SiCl ₄ , Si ₂ Cl ₆ , SiHCl ₃ , SiH ₂ Cl ₂ , SiH ₃ Cl or
The method according to claim 11 optical recording medium according an SiCl ₂ F _2. 15. A raw material gas comprising at least one gas selected from an organometallic compound and a metal halide compound, and O ₂ , O ₃ , H ₂ O, NO, N ₂ O, NO ₂ , N ₂ , N ₂
H _3, N ₂ H ₄ and a manufacturing method of an optical recording medium according to claim 7 for forming the inorganic dielectric film containing a metal compound with at least one reactive gas selected from hexamethyldisilazane. 16. The method according to claim 15, wherein the organometallic compound is trimethylaluminum, triethylaluminum, triisobutylaluminum or dimethylaluminum hydride. 17. The method according to claim 17, wherein the metal halide compound is AlCl ₃ , TiC
l ₃ or TaCl ₅ a method according to claim 15, wherein the optical recording medium. 18. The method according to claim 18, wherein the metal compound is AlN, Al ₂ O ₃ , TiO ₂ or
The process according to claim 15 optical recording medium, wherein the Ta ₂ O _5. 19. The method for manufacturing an optical recording medium according to claim 1, wherein said inorganic dielectric film contains a-Si or SiC. 20. The method for manufacturing an optical recording medium according to claim 19, wherein inorganic silane, organic silane or halosilane is supplied to said plasma chamber from said gas supply means. 21. The method according to claim 20, wherein the inorganic silane is SiH ₄ or SiH ₆ . 22. The organic silane is tetraethylsilane,
21. The method for manufacturing an optical recording medium according to claim 20, which is tetramethylsilane or dimethylsilane. 23. The method of claim 23, wherein the halosilane is SiF ₄ , Si ₂ F ₆ , SiH
₂ F ₂ , SiCl ₄ , Si ₂ Cl ₆ , SiHCl ₃ , SiH ₂ Cl ₂ , SiH ₃ Cl or
The method of claim 20, wherein the optical recording medium is SiCl ₂ F _2. 24. The method for manufacturing an optical recording medium according to claim 1, wherein said recording film contains at least one of a rare earth and a transition metal. 25. The method according to claim 1, wherein the recording film is an amorphous magnetic recording film containing a rare earth and a transition metal. 26. The method according to claim 1, wherein the recording film contains a chalcogenide-based element. 27. The method of manufacturing an optical recording medium according to claim 1, wherein said plasma chamber has a cavity having a rectangular cross section. 28. The method for manufacturing an optical recording medium according to claim 1, wherein said plasma chamber is cylindrical.