JPH0744905A - Optical recording medium and production thereof - Google Patents

Abstract

PURPOSE:To reduce the film forming rate and to obtain high-quality optical recording medium by forming an inorg. dielectric film by using a plasma treatment device having a microwave introducing means equipped with an endless circular waveguide. CONSTITUTION:When a SiNx film is formed by using a plasma CVD device, a plasma chamber 201 and a film forming chamber 202 are evacuated and N2 gas as the reactive gas is introduced through a gas introducing means 207 into the chamber 201. SiH4 gas as the source gas is introduced into the chamber 202, while 2.45 GHz microwaves with 1.5kW power is introduced through a microwave introducing means 206 into an endless circular waveguide 205. By introducing microwaves into the chamber 201 through a slot formed on the inner wall of the waveguide, plasma essentially generated from N2 gas is produced in the chamber 201. The SiH4 gas in the chamber 202 is ionized with the plasma energy to form a film of SiNx on a substrate 100.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical recording medium and a manufacturing method thereof, and more particularly to an optical recording medium having an inorganic dielectric film on a substrate and a manufacturing method thereof.

[0002]

2. Description of the Related Art In recent years, a recording medium having a large recording capacity and capable of high-speed data transfer has been required as a computer memory or an image information memory. As an optical recording medium that records and reproduces using a laser beam as a recording medium that meets these demands, for example, a magneto-optical recording medium and a phase change recording medium have been actively developed.

That is, in a magneto-optical recording medium, when polarized laser light is applied to the surface of a recording layer containing a magnetic material, the direction of rotation of the plane of polarization of the reflected laser light differs depending on the direction of magnetization ( (Kerr effect) is used to record and reproduce information. On the other hand, a phase-change recording medium is, for example, between an amorphous state and a crystalline state generated when a recording layer containing Te is irradiated with laser light. In this method, information is recorded / reproduced by utilizing the reversible phase transition in (1) and different optical characteristics shown by each state.

In order to obtain a reproduction signal having a larger C / N ratio, these optical recording media are provided with an inorganic dielectric film, for example, between the recording film and the substrate, and use the reproduction signal by an optical interference effect. And amplify (enhancement effect), and further, as shown in FIG. 4A, the recording film 401 is replaced with the inorganic dielectric film 402.
And 403 hold the recording film 4 together with the amplification of the reproduction light.
01 is used as a protective film,
Also known is a structure in which a reflective layer 404 is added on the inorganic dielectric layer 403 as shown in FIG. 4B in order to further enhance the interference effect.

And as such an inorganic dielectric layer,
Conventionally, for example, Si ₃ N ₄ , SiC, SiO, SiO
₂ , amorphous Si (a-Si), AlN, Al ₂ O
Thin films of ₃ , TiO ₂ , Ta ₂ O ₅ , ZnS, etc. are used.

By the way, the performance of the magneto-optical recording medium or the phase change type optical recording medium using such an inorganic dielectric, such as the C / N ratio of the reproduced signal and the stability of the recording film with time, is as described above. Not only that, but it also depends greatly on the characteristics of the dielectric film. Therefore, at the research institutes in Japan and abroad, the enhancement effect of the reproduction signal is great for the high performance of the optical recording medium, and the protection performance of the recording layer is excellent. Active research and development have been conducted on dielectric materials and manufacturing methods. For example, as disclosed in Japanese Examined Patent Publication No. 15929/1990, AlN or SiN is used as an Al target or a Si target as N ₂
It is produced by reactive sputtering in a gas atmosphere, or is disclosed in JP-A-3-66043 or JP-A-3-66043.
It has been attempted to form an inorganic dielectric layer film for an optical recording medium by the ECR plasma CVD method as described in JP-A-69033 and JP-A-4-30343.

However, in recent years, in the trend of cost reduction of optical recording media, it is required to improve the film formation rate of the inorganic dielectric film.

Under such a circumstance, the reactive sputtering method among the above-mentioned methods for forming an inorganic dielectric film significantly increases the power input to the target in order to improve the deposition rate of the film. However, in this case, it is difficult to stably form a high-quality inorganic dielectric film for an optical recording medium because abnormal discharge to the target is likely to occur due to the concentration of charges on the target. . On the other hand, the plasma CVD method can form a film at a higher speed than the reactive sputtering method, but an inorganic dielectric film having an excellent enhancement effect and recording layer protection performance is used as a cause of deformation of an optical recording medium. In order to form a film without including such a stress, the film forming rate has its own upper limit, which is insufficient for reducing the cost of the optical recording medium.

Further, in the conventional plasma CVD method, a uniform plasma density can be obtained only in a limited region inside the chamber, and when a uniform inorganic dielectric film is simultaneously formed on a plurality of substrates. However, it is necessary to increase the size of the film forming apparatus, and it is not easy to reduce the cost of the optical recording medium by using the plasma CVD method.

[0010]

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and a main object of the present invention is to suppress C / N of a reproduced signal while suppressing deformation such as warpage and bending.
An object of the present invention is to provide an optical recording medium manufacturing method capable of manufacturing an optical recording medium capable of stably maintaining a high ratio at a low cost.

Another object of the present invention is to provide a high quality optical recording medium which is less likely to be deformed such as warping or bending, has a high C / N ratio of a reproduced signal, and is excellent in stability over time of a recording layer. The purpose is to provide.

[0012]

The inventors of the present invention have diligently studied the above object, and as a result, supply microwaves into a plasma chamber through a microwave introduction device having an endless annular waveguide. When using the microwave plasma processing device configured as above, a high-quality inorganic dielectric film with excellent enhancement effect and protection performance of the recording film and low internal stress is formed at high speed and with a uniform film thickness in a large area. It has been found that the present invention can be formed into a film, and a method for manufacturing an optical recording medium of the present invention is a method for manufacturing an optical recording medium having a laminated film of a recording film and an inorganic dielectric film on a substrate. It is characterized in that the inorganic dielectric film is formed by using a plasma processing apparatus having a microwave introducing unit having an endless annular waveguide.

The method of manufacturing an optical recording medium of the present invention is a method of manufacturing an optical recording medium having a laminated film of a recording film and an inorganic dielectric film on a substrate, the recording film being formed on the substrate. A step of forming a film; and a step of forming the inorganic dielectric film on the substrate by a microwave plasma CVD method; and arranging the microwave plasma CVD method so as to surround the plasma chamber and the plasma chamber. And a microwave plasma processing apparatus provided with an endless annular waveguide having a plurality of slots for introducing microwaves into the plasma chamber. It is a feature.

Further, the optical recording medium of the present invention is an optical recording medium having a laminated film of a recording film and an inorganic dielectric film on a substrate, the inorganic dielectric film being a microwave provided with an endless annular waveguide. It is characterized in that the film is formed by using a plasma processing apparatus having an introducing means.

Next, the present invention will be described with reference to the drawings.

FIG. 1 is a continuous film-forming apparatus for an in-line inorganic dielectric film and a recording film, which is applied to an embodiment of a method for manufacturing an optical recording medium as shown in FIG. 4B according to the present invention. FIG. 1 is a schematic plan view of FIG.
2 is a deaeration chamber, 103 and 104 are inorganic dielectric films 402,
403 is a film forming chamber, 105 is a recording film 401, for example, a magneto-optical recording film forming chamber, 106 is a reflecting film forming chamber, and 107 is the recording film 401 and the inorganic dielectric film 40.
2 is an extraction chamber for the substrate 100 on which the film is formed. An openable and closable door (not shown) is provided between the chambers, and a substrate holder 108 carrying the substrate 100 is formed so as to be sequentially movable from the substrate loading chamber 101 to the substrate unloading chamber 107.

The optical recording medium substrate 100 is conveyed from the substrate loading chamber 101 toward the substrate unloading chamber 107, and the degassing of the substrate 100 and the inorganic dielectric film 40 are performed in each chamber.
2 is formed, the recording film 401 is formed, the inorganic dielectric film 403 is formed, and the reflective layer 404 is formed in that order, whereby the recording film 401 and the inorganic dielectric films 402 and 40 are formed on the substrate.
Thus, an optical recording medium including a laminated film of 3 and the reflective layer 404 is formed.

In the present embodiment, the microwave plasma CVD film forming apparatus having the microwave introducing means having the endless annular waveguide is arranged in the film forming chambers 103 and 105. Next, FIG. 2A is a schematic perspective view of a microwave plasma CVD film forming apparatus arranged in the film forming chamber 103 (105), and FIG. 2B is a substrate of the CVD apparatus of FIG. 2A. It is a schematic sectional drawing of the direction orthogonal to a conveyance direction.

In FIG. 2, 201 is a plasma chamber, 202 is a film forming chamber, and 203 is a degassing chamber 102.
From the substrate to the inorganic dielectric film forming chamber 103, 204
Is a substrate transfer path from the film forming chamber 103 to the recording film forming chamber 104. Further, 205 is an endless annular waveguide disposed around the plasma chamber, 206 is a microwave introduction part to the annular waveguide 205, and 207 and 208 are gas introductions to the plasma chamber 201 and the film forming chamber 202. It is a means.

Next, FIG. 3 (a) is a schematic perspective view of the microwave introducing means used in the plasma CVD apparatus shown in FIG. 2, and FIG. 3 (b) is a sectional view taken along the line AA of FIG. 3 (a). is there. In FIG. 3, 205 and 206 are the endless annular waveguide and the microwave introducing section as described above, and the microwave introducing section 206 has, for example, a tuner directional coupler or an isolator as a microwave generating means. And a microwave power source and the like are connected.

The endless tubular waveguide 205 used in the present invention has an inner wall 205-1 and an outer wall 205-2, and a predetermined gap 205 is provided between the inner wall 205-1 and the outer wall 205-2.
-3. The inner wall of the tubular waveguide is provided with perforations (slots) 301 for supplying microwaves to the plasma chamber.

Then, the plasma CVD configured as described above
For example, when a SiNx film is formed using the apparatus, the plasma chamber 201 and the film forming chamber 202 are evacuated by a vacuum pump, and then N ₂ gas is introduced into the plasma chamber 201 from the gas introduction unit 207 as a reaction gas. Also, S is used as a source gas in the film forming chamber 202.
While introducing iH ₄ , microwaves are introduced from the microwave introduction means 206 into the endless annular waveguide, and the microwaves are introduced into the plasma chamber 201 through the slots provided on the inner wall of the waveguide, thereby plasma is generated. A plasma mainly originating from N ₂ gas can be generated in the chamber 201, and SiH ₄ gas is ionized by receiving the energy of the plasma in the film forming chamber.
A SiNx film can be formed on a substrate.

In the present invention, the microwave introducing means is constructed so that the microwave introducing direction is orthogonal to the outer wall of the tubular waveguide as shown in FIG. 3 (b).
The tubular waveguide and the microwave introducing portion 206 may be arranged, or may be introduced in the tangential direction of the outer wall of the annular waveguide as shown in FIG. However, as shown in FIG. 3B, the tubular waveguide 205 and the microwave introducing portion 206 are arranged such that the microwave introduction direction is orthogonal to the outer wall of the tubular waveguide. The microwave introduced from the microwave introduction part into the annular waveguide is divided into two, and the microwave is guided in both directions of the annular waveguide 205 (see arrows E and F in FIG. 3B).
When the microwaves are propagated to, it is possible to generate an interference wave in the annular waveguide between the distributed microwaves, and usually the intensity of the microwave becomes the weakest. The microwave intensity can be compensated, and uniform microwaves can be introduced into the plasma chamber, and a high-quality inorganic dielectric film for an optical recording medium can be formed with a more uniform film thickness.

As a method of distributing the microwaves in two directions, for example, as shown in FIG. 3B, a triangular prism having a triangular cross section, and a microwave-reflecting material (for example, metal) is used. The distribution block 302 is formed on the inner wall 205-1 of the annular waveguide at a position where the microwave from the microwave introducing means 206 collides, or the inner wall 205-1 of the annular waveguide itself is such a distribution block. There is a method of using an annular waveguide preformed in such a shape as to function as.

In this method, the distribution block has a shape capable of evenly distributing microwaves, for example, the triangular prism has a cross-sectional shape of an isosceles triangle and an apex angle sandwiched between two equal sides. The distribution block is arranged on the inner wall 205-1 so that the direction of the perpendicular line from the bottom to the bottom coincides with the direction of introduction of the microwave from the microwave introduction means, and the apex angle projects in the direction of introduction of the microwave. Alternatively, when the endless annular waveguide functioning as described above is used, the performance and uniformity of the formed inorganic dielectric film can be further improved. Further, in this embodiment, it is preferable to set the angle of the apex angle to 90 ° because the microwaves introduced into the annular waveguide 205 can be efficiently interfered with each other. It is also preferable to make the length of the long side of the dispersion block equal to the distance between the inner wall and the outer wall of the annular waveguide in order to improve the utilization efficiency of microwaves.

The dispersion block is not particularly limited as long as it has a microwave-reflecting property as described above. For example, a metal or the like can be used, but Al is taken into consideration in consideration of microwave reflection efficiency and durability. Alternatively, a dispersion block made of glass whose surface is coated with chromium or Al can be used.

Next, the interval (d) between the plurality of slots 301 provided on the inner wall of the endless annular waveguide used in the present invention.
Is particularly limited as long as microwaves capable of achieving a plasma density (for example, 10 ¹¹ pieces / cm ³ or more, particularly 10 ¹² pieces / cm ³ or more) necessary for forming an inorganic dielectric film can be introduced into the plasma chamber. However, for example, when the endless annular waveguide is configured by using the dispersion block as described above, the slot interval (d) is set to the value of the interference wave of the microwave generated in the endless annular waveguide. It is preferable that the wavelength is ½ of the in-tube wavelength or an integral multiple thereof so that the slot matches the “antinode”.

That is, according to this structure, a high-quality inorganic dielectric film for an optical recording medium can be uniformly formed in a large area, which is extremely effective in reducing the manufacturing cost of the optical recording medium.

Next, regarding the shape of the slot 301 provided in the microwave introducing device of the present invention, whether the long side is parallel or inclined with respect to the traveling direction of the microwave, it is not rectangular but circular, polygonal, iron array type or star-shaped. Any mold can be used as long as microwave can be introduced from the slot. However, in consideration of the efficient introduction and the ease of adjusting the leak rate, a shape in which the long side is perpendicular to the traveling direction of the microwave is preferable, for example, 40 mm to 60 mm × 1.
A rectangular shape of mm to 5 mm is optimal.

Next, the length (1) of the slot 301 defines the leak rate of microwaves from each slot, and can be a factor for controlling the density of plasma generated in the plasma chamber. The value of the value of the plasma density in the plasma chamber satisfies the above-mentioned value depending on the power of the microwave introduced through the microwave introduction unit, the state of the microwave in the annular waveguide, and the position of the slot. However, when the ratio of the inner circumference of the annular waveguide 205 to the in-tube wavelength is large, the microwave is propagated by a larger wave number to introduce the microwave of the annular waveguide. It is preferable that a sufficient amount of microwaves be leaked from the slots located at the positions facing each other, and for that purpose, it is desirable to shorten the length of each slot to reduce the leak rate.

Further, when the ratio of the inner circumference of the annular waveguide 205 to the in-tube wavelength is small, the amount of microwave leakage from the slot at the position opposite to the microwave introduction part of the annular waveguide does not become excessive. It is preferable to lengthen each slot to increase the leak rate.

More specifically, when the ratio of the inner peripheral length to the inner wavelength of the annular waveguide is 3 to 24 times, the optimum length of the slot is set to 1/4 to 3/8 of the inner wavelength. A high-quality inorganic dielectric film for an optical recording medium can be uniformly formed over almost the entire film forming chamber, which is preferable for further reducing the manufacturing cost of the optical recording medium.

Further, when the apparatus according to this embodiment is used as described above, a substantially uniform and high-quality inorganic dielectric film for an optical recording medium can be formed regardless of the position of the substrate in the chamber. Can be particularly preferably used for the in-line type film forming apparatus as shown in FIG. 1 for manufacturing an optical recording medium while continuously or intermittently conveying the same.

Next, in the present invention, the material of the endless annular waveguide is not particularly limited, but it is preferable that the inner wall and the outer wall of the endless annular waveguide have a structure capable of suppressing the propagation loss of microwaves, For example, metals and alloys such as Cu, Al, Fe and Ni, various glasses, quartz, silicon nitride, alumina, acrylic, polycarbonate, polyvinyl chloride,
Al, W, Mo, Ti, T on insulator such as polyimide
Any of those coated with a metal thin film of a, Cu, Ag, or the like, which have sufficient mechanical strength and whose surface is covered with a conductive layer so as not to penetrate microwaves, can be used. A configuration in which the wave tube is made of stainless steel, the inner surface of the wave guide is coated with copper, and further silver is coated can be preferably used.

The shape of the endless annular waveguide used in the present invention may be polygonal or other shape depending on the shape of the plasma chamber. Regarding the cross-sectional shape of the void in the annular waveguide, any size may be adopted, and any shape, circular, semi-circular or other shape can be adopted as long as microwaves can be propagated. Further, it is preferable to make the inner circumference of the tube approximately an integral multiple of 3 to 24 times the inner wavelength of the microwave in order to make the plasma introduced into the plasma chamber uniform.

In order to generate a magnetic field inside the plasma chamber, particularly near the inner wall of the chamber by arranging a magnet or the like on the surface of the inner wall of the endless annular waveguide facing the plasma chamber, This is preferable in that the adhesion of the inorganic dielectric film can be suppressed and the film formation efficiency can be improved.

Further, it is preferable that the annular waveguide is provided with some cooling means, for example, as indicated by 303 in FIG. 3B, in order to prevent the inner surface of the waveguide from being heated and oxidized by microwaves. Is. As this cooling means, for example, an air cooling means, a water cooling means or the like can be used. Furthermore, the slot provided on the inner wall of the annular waveguide has been described as a perforation in the above embodiment, but the present invention is not limited to this, and a structure such as a dielectric window through which microwaves can pass is provided. May be

Next, FIG. 6A shows a plasma C which can be used for forming an inorganic dielectric film in the method of manufacturing an optical recording medium of the present invention.
FIG. 11 is a schematic perspective view showing another embodiment of the VD device, and this embodiment is characterized in that the plasma chamber has a rectangular shape and an endless annular waveguide is arranged around the plasma chamber.

In FIG. 6A, 601 is an endless annular waveguide containing a plasma chamber, 602 is a film forming chamber 603 disposed vertically below the plasma chamber, and a film forming chamber 603 is provided to the microwave introducing means. It is a microwave introduction part. Further, 604 and 605 are, for example, a transport path for the disk substrate 100, 611 is a gas introducing means to the plasma chamber, and 612 is a gas introducing means to the film forming chamber.

6B is a sectional view taken along line BB of the CVD apparatus shown in FIG. 6A, and FIG. 6C is a sectional view taken along line CC of FIG. 6A.

In FIGS. 6B and 6C, reference numeral 606 is, for example, a quartz plasma chamber, 607 is an inner wall of the endless annular waveguide, and slots 608 are provided at predetermined intervals. . Further, reference numeral 609 is a distribution block for distributing the microwaves introduced from the plasma introduction portion 603 in the direction of arrow 610 in both directions within the endless annular waveguide.

The formation of the inorganic dielectric film by using the plasma CVD apparatus having the above-mentioned structure is performed in the same manner as described above by using a vacuum pump (not shown) in the plasma chamber and the film forming chamber, for example, at 1 × 10 ⁻⁴ Pa. After evacuation to some extent, from the gas introducing means 611 and 612, or the gas introducing means 6
While introducing gas from 11 to adjust to a desired pressure,
This can be performed by supplying microwaves of desired power from a microwave power source into the annular waveguide.

Even when such a rectangular plasma chamber and film forming chamber are used, the endless annular waveguide, particularly the endless annular waveguide provided with a distribution block, is used to arrange the film in the film forming chamber. A high-quality inorganic dielectric film for an optical recording medium can be formed on each of the substrates with a uniform film thickness. Therefore, even when attempting to form a film on a plurality of substrates at the same time, the size of the plasma chamber and the film forming chamber need only be a size capable of accommodating the plurality of substrates, and the film forming efficiency can be improved. .

As described above, when the rectangular endless annular waveguide is used, vertical reflection at the right-angled portion 613 in the annular waveguide is promoted as shown in FIG. It is preferable to provide the reflection block 613 that improves the propagation efficiency of the.

The reflection block 614 has, for example, an isosceles right triangle in cross section, and the length (k) of the long side serving as a reflection surface is twice the width (W) of the outer wall and the inner wall of the annular waveguide. It is preferable from the viewpoint of improving the propagation efficiency to use the above-mentioned one and arrange the two equal sides so that they are in contact with the right-angled portion 613.

Further, FIG. 7A and its sectional view taken along the line DD in FIG. 7B show another embodiment of the plasma CVD apparatus which can be used in the method for producing an optical recording medium of the present invention.
It is characterized in that the film forming chamber is integrated with the plasma chamber in the CVD apparatus shown in FIG.

That is, in FIGS. 7A and 7B, 701 is an endless annular waveguide, 702 is a microwave introducing portion, 703 is an inner wall of the annular waveguide, 704 is a slot provided in the inner wall, 7
Reference numeral 05 denotes a plasma chamber which also serves as a film forming chamber, 706
Is a distribution block, 707 is a reflection block, and 707
Is a gas introduction means.

The method for producing an inorganic dielectric film using this apparatus is the same as that described above, but the CVD apparatus of the present embodiment uses a single gas such as a Si-based semiconductor film as described later, for example. It is preferably used for forming an inorganic dielectric film that can be formed.

By the way, as the gas used for forming the inorganic dielectric film for the optical recording medium by the plasma CVD method of the present invention, for example, a-Si, Si as the inorganic dielectric film is used.
When forming a Si-based semiconductor film such as C, as a raw material gas containing Si, for example, inorganic silanes such as SiH ₄ and SiH ₆ , tetraethylenesilane (TES), tetramethylsilane (TMS), dimethylsilane (DMS). ) And other organic silanes, SiF ₄ , Si ₂ F ₆ , SiHF
₃ , SiH ₂ F ₂ , SiCl ₄ , Si ₂ Cl ₆ , SiH
Cl ₃ , SiH ₂ Cl ₂ , SiH ₃ Cl, SiCl ₂ F
It is preferable to use at least one of halosilanes such as _2, which is in a gas state at room temperature and normal pressure, or which is easily gasified, and SiN is used as the inorganic dielectric film.
When forming a Si compound-based film such as x, SiO, or SiO ₂ , the source gas containing Si atoms is, for example, S
Inorganic silanes such as iH ₄ and SiH ₆ , tetraethoxysilane (TEOS), tetramethoxysilane (TMO)
S), octamethylcyclotetrasilane (OMCTS)
Organosilanes such as SiF ₄ , Si ₂ F ₆ , SiHF
₃ , SiH ₂ F ₂ , SiCl ₄ , Si ₂ Cl ₆ , SiH
Cl ₃ , SiH ₂ Cl ₂ , SiH ₃ Cl, SiCl ₂ F
_As halosilanes such as ₂ , those that are in a gas state at normal temperature and normal pressure, or those that easily gasify and reaction gas,
For example, NH ₃ , N ₂ H ₄ , hexamethyldisilazane (HM
DS), O ₂ , O ₃ , H ₂ O, NO, N ₂ , O, NO ₂
It is preferable to appropriately select and use.

As the inorganic dielectric film, AlN, Al ₂ O
_When forming a metal compound thin film of ₃ , ₃ , TiO ₂ , Ta ₂ O ₅ or the like, trimethylaluminum (TMAl), triethylaluminum (TEAl), triisobutylaluminum (TIBA) is used as a source gas containing metal atoms.
l), dimethyl aluminum hydride (DMAl
H), organic metals such as AlCl ₃ , TiCl ₃ , Ta
Oxide as a reaction gas with metal halides such as Cl _5
2 , O ₃ , H ₂ O, NO, N ₂ , O, NO ₂ , N ₂ , N
H ₃ , N ₂ H ₄ , hexamethyldisilazane (HMDS)
And the like are preferably selected and used.

When two kinds of raw material gas and reaction gas are used for forming the inorganic dielectric film as described above, the plasma chamber 101 and the film forming chamber 10 as shown in FIG.
It is preferable to introduce a reaction gas and a source gas into each of No. 2 and 2. In particular, the reaction gas is introduced into the plasma chamber 101 from the gas introduction unit 207 and the source gas is introduced into the film formation chamber 102 from the gas introduction unit 208. If introduced, the internal stress in the optical recording medium-like inorganic dielectric film formed on the substrate can be further reduced, and the inorganic dielectric film providing a high quality optical recording medium can be made extremely efficient. It can be manufactured well.

Next, to describe the conditions for forming the inorganic dielectric film for an optical recording medium using the plasma CVD apparatus according to the present invention for various embodiments described above, the frequency 300MH _Z is a microwave usable in the present invention a wave range of 300GH _Z, in particular electromagnetic radiation of 2.45 GHz _Z can be suitably used.

The input power from the microwave power source varies depending on the length of the circumference of the annular waveguide and the types of the reaction gas and / or the raw material gas, but for example, the circumference of the annular waveguide is 600 to 1250 mm and this length
When the length of the slot corresponds to 3 to 24 times the in-tube wavelength, the slot length is 1/4 to 3/8 of the in-tube wavelength, and inorganic silanes, organic silanes, or halosilanes are used as the source gas. 0.5-5.0 kW, especially 1.0-2.5
kw is preferable, and the total pressure of the raw material gas or the reaction gas in the plasma generation container and / or the process container or the mixed gas thereof is 0.5 to 5 Pa, and particularly 0.5 to 2 Pa. It is preferable to form a film.

Next, in the method of manufacturing the optical recording medium of the present invention, the constitution other than the step of forming the inorganic dielectric film according to the features of the present invention by the plasma CVD method will be described.
The order of the step of forming the inorganic dielectric film and the step of forming the optical recording film is not limited to any particular one, and is not limited to the order of the inline process of FIG. The film formation may be sequentially performed according to.

For the step of forming the recording film, a known film forming method suitable for the characteristics of the material used for the recording film may be used. Specifically, for example, vapor deposition, sputtering, wet coating and the like can be used.

Further, in the present invention, the optical recording film can be used without particular limitation as long as it is an optical recording film capable of recording / reproducing information by irradiation of a light beam.
In particular, an amorphous magnetic film containing a rare earth and / or a transition metal, such as Tb-Fe-Co, Gd-Fe-Co, Tb.
-Fe-Co-Cr, Gd-Fe-Co-Cr, or other amorphous magnetic film containing a rare earth and / or a transition metal, or a magneto-optical recording film having a laminated film thereof or a chalcogenide element such as Te. Since the recording film is highly corrosive, the inorganic dielectric film is required to have particularly excellent recording layer protection performance, so that the effect of the method for producing an optical recording medium of the present invention can be more effectively exerted. It is preferable in that it can be done.

In the optical recording medium according to the present invention, the thickness of the inorganic dielectric film is set according to the material and structure of the recording layer and the characteristics of the inorganic dielectric film. In the structure in which the two layers of the inorganic dielectric films are arranged so as to hold the magneto-optical recording film as shown in the above, in order to protect the recording layer and enhance the Kerr rotation angle during signal reproduction. In addition, the substrate and the inorganic dielectric film of the magneto-optical recording film are 100 to 1500.
Å degree, or 1 for the inorganic dielectric film on the magneto-optical recording film
It is preferable to set it to about 100 to 1000Å.

If necessary, a protective layer may be provided on the recording layer of the optical recording medium, the inorganic dielectric film or the reflective layer obtained by the method for producing an optical recording medium of the present invention. Good.

In this case, for the protective layer, for example, a photocurable resin is applied on the recording layer so as to have a predetermined thickness (for example, 10 to 30 μm), and then light is irradiated to cure the resin, or the protective layer has a predetermined thickness. A resin sheet formed by molding (for example, a polycarbonate resin sheet or a polyester resin sheet)
Can be formed by adhering to the recording layer, the inorganic dielectric film, or the reflective layer with an adhesive or a pressure sensitive adhesive, and in particular, a resin sheet formed in advance to a predetermined thickness is used for the protective layer. Is particularly preferable in the present invention because it can prevent the internal stress of the protective layer from deforming the optical recording medium.

As the substrate of the optical recording medium according to the present invention, a substrate generally used as a substrate for optical recording medium can be used. For example, glass, bisphenol-based polycarbonate resin, or other modified polycarbonate resin, acryl. A substrate containing a resin or an amorphous polyolefin resin can be used.

[0061]

The present invention will be described in more detail with reference to the following examples.

Example 1 Outer diameter 86 mmφ, inner diameter 15 m
A donut-shaped polycarbonate resin (trade name: Iupilon H4000; Mitsubishi Gas Chemical Co., Ltd.) with mφ, thickness 1.2 mm, and a spiral pregroove with a width of 0.6 μm and a pitch of 1.6 μm and a depth of 800 Å on one surface. )
A disk substrate made of Mfg. Co., Ltd.) on the surface on which the track grooves are formed, an amorphous silicon (a-Si: H) film having a thickness of 72 nm as a first dielectric film, and a thickness of 10 n as a recording layer.
m Gd-Fe-Co amorphous magnetic layer and a 20 nm thick Tb-Fe-Co amorphous magnetic layer laminated film, a 30 nm thick a-Si: H film as a second dielectric layer, and reflection. A magneto-optical disk in which an Al film having a thickness of 60 nm was sequentially laminated as a layer was formed by the following method.

That is, first, the in-line type film forming apparatus shown in FIG. 1 was prepared. In the film forming apparatus, a plasma CVD film forming apparatus was arranged in the film forming chambers 103 and 105 for the first and second a-Si: H films as shown in FIG.

In the plasma CVD film forming apparatus used here, the plasma chamber 201 has a cylindrical shape with an outer diameter of φ326 mm, an inner diameter of 320 mm, and a length of 115 mm, and an outer diameter of φ326 mm and an inner diameter of φ are arranged vertically below the chamber 201.
A cylindrical process chamber 202 having a length of 320 mm and a length of 210 mm was connected so that their central axes coincide with each other.

As for the annular waveguide 205, the dimension of the cross section of the void in the waveguide is the same width (W) as the WRT-2 standard waveguide, 27 mm, and the height (H) is 96 mm (see FIG. 9). ), Having a center diameter of 354 mm, made of stainless steel, and the inner surface of the waveguide is copper-coated to suppress microwave propagation loss and further silver-coated on the inner surface of the inner wall to have a length of 42 mm and a width of 4 mm. Rectangular slot 3
28 pieces of 01 were provided at intervals of about 40 mm.

As the distribution block, an Al-made one having a cross section of an isosceles right triangle with a long side width equal to the width of the void of the waveguide 205 and made of Al is used for introducing microwaves into the inner wall of the annular waveguide. Microwaves were evenly distributed (welded) at opposite positions.

Next, the substrate holder 107 having the three disk substrates 100 mounted in a line is loaded into the substrate loading chamber 101 of the in-line type film deposition apparatus having the deposition chamber for the a-Si: H film having the above structure, Next, the substrate was transferred to the degassing chamber 102 to be degassed, and then the substrate was transferred to the first a-Si: H film forming chamber 103 to form a first a-Si: H film.

As the a-Si: H film forming conditions, the inside of the plasma chamber 201 and the film forming chamber 202 is evacuated to 10 ^-4 Pa using a vacuum pump, and then Ar gas is supplied from the gas introducing means 207 to the plasma chamber. 2 in
It was introduced at a flow rate of 00 SCCM, and SiH ₄ gas was introduced from the gas introduction means 208 into the process container at a flow rate of 500 SCCM, and the pressure in the plasma chamber and the film forming chamber was adjusted to 1.3 Pa.

Next, from the microwave power source, the frequency is 2.45G.
A microwave having a frequency of 1.5 kW and a power of 1.5 kW was introduced into the annular waveguide through the microwave introduction part to form an a-Si: H film. The wavelength inside the waveguide at this time is 159 m.
It was m. As a result, 72 nm thick 1a-Si: H
The film formation was completed in about 5 to 6 seconds, and the deposition rate of the a-Si: H film was about 800 nm / min. The temperature of each substrate immediately after film formation was about 50 ° C.

After the formation of the first a-Si: H film was completed, the substrate was transferred to the recording layer film formation chamber, and the Gd-Fe-Co film and the Tb film were formed.
The -Fe-Co film was formed by the sputtering method.

The sputtering target is 1
A GdFeCo alloy target of 50 mm × 470 mm and a thickness of 6 mm or a TbFeCo alloy target of the same size is used, and the conditions of RF sputtering are to evacuate the chamber to 1 × 10 ⁻⁵ Pa and then Ar.
Gas pressure 0.1 Pa, power density 5.6 W / cm ²
Was sputtered.

After forming the recording layer, the substrate is formed into a second a-Si:
The film was conveyed to the H film forming chamber 105 and an a-Si: H film was formed under the same conditions as the first SiNx film forming conditions. Therefore the second
The film formation time of the a-Si: H film was 2 to 3 seconds.

Next, this substrate was transported to a film forming chamber for a reflection film, and an Al reflection film was formed by a sputtering method. A 150 mm × 470 mm thick, 6 mm Al target was used as the sputtering target, and the conditions for RF sputtering were to evacuate the interior of the chamber to 1 × 10 ⁻⁵ Pa and then Ar gas at a pressure of 0.3 Pa and a power density of 5 to 5. Sputtering was performed at 7 W / cm ² .

Then, the three substrates on which the film formation was completed were taken out from the in-line type film formation apparatus, and a polystyrene-polybutadiene block copolymer (trade name: Califlex, TR1107; Shell Chemical Co., Ltd.) was formed on the Al reflection film. 10)
A rubber-based pressure-sensitive adhesive containing 0 part by weight, 50 parts by weight of modified wood rosin, and 1 part by weight of a stabilizer is applied to a thickness of 2 μm, and then a urethane acrylate-based UV-curable resin having a thickness of 6 μm is applied on the pressure-sensitive adhesive layer. A cured film was laminated to produce a magneto-optical disk.

The C / N ratio and the defect occurrence rate B.V. E. R. The initial value and the value after standing for 1500 hours under the conditions of 80 ° C. and 85% RH were measured and evaluated.

The C / N ratio and the BER are the magneto-optical disk recording / reproducing inspection device (product name, L
N52A: manufactured by Shiba Soku Co., Ltd.) was used to record and reproduce information, and then measured.

However, the recording and reproducing conditions were as follows.

Linear velocity: 9.04 m / sec Recording frequency: 6 MHz Recording power: 10 mW Reproducing power: 1 mW Recording / reproducing light wavelength: 830 nm

Regarding the tilt angle of the magneto-optical disk thus created, a tilt angle measuring device (trade name: LM-10
0: Measured using Ono Sokki Co., Ltd.).

The above results are shown in Table 1. Table-1
In the evaluation of the C / N ratio after endurance, the amount of change before and after endurance was 3
The case of dB or more was A, the case of 3 to 8 dB was B, and the case of exceeding 8 dB was C.

In addition, B. E. R. The evaluation was made such that the case where the value after the endurance had the same order as the initial value was A, the case where the order decreased by one digit was B, and the case where the order decreased by two digits or more was C.

Further, the tilt angle was evaluated as A when the tilt angle was within 5 mrad, and B when the tilt angle exceeded 5 mrad.

Further, according to the following method, the stress and the refractive index of the 1a-Si: H film formed by the above plasma CVD method were measured.

That is, an a-Si: H film was formed on a glass disk having a diameter of 30 mm and a thickness of 1.0 mm for stress measurement under the same film forming conditions as described above, and the substrate was deformed. It is detected as the number of Newton rings using an interferometer. Here, when the number of Newton rings is m, the radius of curvature γ of the substrate is obtained by the following equation.

Γ = a ² / mλ ... a: radius of substrate λ: wavelength of light source used by interferometer Here, when the value of γ is substituted into the following equation, the stress σ of the first SiN film is obtained.

[0086] ^{σ = Eb 2/6 (1} -ν) γd ... E: Young's modulus of the substrate [nu: Poisson's ratio of the substrate gamma: curvature of substrate radius d: thickness of SiNx film b: thickness of the substrate

Further, the refractive index of the 1a-Si: H film is calculated from the reflectance of the spectral characteristics of the sample formed on the glass substrate, and is arbitrary for one sample.
The average value of the refractive indexes calculated by measuring the reflectance at 0 places was used as the refractive index of the sample.

Further, in order to measure the thickness unevenness of the first a-Si: H film formed by the plasma CVD method described above, three glass discs having a diameter of 86 mm and a thickness of 1.2 mm were prepared and placed on top of them. In the same manner as the plasma CVD method described above, a 72-nm-thick a-Si: H film was simultaneously formed, and a region (optical region) surrounded by a circle having a radius of 24 mm and a circle having a radius of 40 mm was formed on the disk. The film thickness of the a-Si: H film at any 20 points in the (corresponding to the effective area of the magnetic disk) was measured. And AA when the film thickness at all measurement points is within ± 2.5% with respect to the reference thickness, (the film thickness at any measurement point is relative to the reference thickness) ± 2.5%
If the thickness exceeds ± 3% and is within ± 3%, the film thickness at any measurement point is ± 3% with respect to the reference thickness, and if it is within ± 5%, B is at any measurement point. The film thickness distribution was evaluated as C when the film thickness exceeded ± 5% of the reference thickness.

Furthermore, a diameter of 86 mm and a thickness of 1.2 m are newly added.
m polycarbonate resin (trade name: Iupilon H40
00; 3 disk substrates made by Mitsubishi Gas Chemical Co., Inc.
Prepare three wafers, and use a plasma CVD method to form a- of 200 nm thickness on the three substrates by the same procedure as described above.
An Si: H film was formed at the same time, and the obtained film was measured for adhesion with the substrate by a cross hatch test.

In the cross-hatch test, first, with a cutter knife, a total of 2 squares of 3 mm square were formed on the dielectric film on the substrate.
A cut was made so that five pieces were formed, and an adhesive tape having an adhesion force of 2 kgf / cm was attached to this position, and then the tape was peeled off perpendicularly to the film surface. Further, this test was conducted at arbitrary 6 positions for one disc.

The above results are shown in Table 1.

The evaluation criteria are as follows.

A: Dielectric film was not peeled off at all 6 locations subjected to the crosshatch test. B: 1 square or more and 3 squares or less were peeled off at least at one of the 6 locations subjected to the crosshatch test. C: Cross Peeling over 3 squares occurred in at least 1 of 6 hatched areas

(Comparative Example 1) 1a-S used in Example 1
As shown in FIG. 8, the i: H film and the second a-Si: H film forming apparatus 103 and 105 are provided with a waveguide 801 for introducing a microwave into the plasma chamber 803 from one end of the plasma chamber, and a plasma in the chamber. Electron cyclotron resonance (E) equipped with a coil 802 and a gas introduction means 804 for generating electron cyclotron resonance in
CR) Example 1 except that the plasma CVD film forming apparatus was replaced
Three magneto-optical disks were simultaneously prepared in the same manner as in.

In this comparative example, the film formation conditions for the a-Si: H film are such that the internal stress of the a-Si: H film is within the range of stress (0 ~ -3
0 kg / mm ² ) and, specifically, a microwave having a frequency of 2.45 GHz is introduced from the waveguide 801 into the plasma chamber 803, and electron cyclotron resonance is performed by the coil 802 arranged outside the container. A qualifying magnetic field of 875 Gauss was generated in the container.

The microwave power is 500 W, the gas flow rate is SiH ₄ 10 SCCM, Ar is 30 S.
CCM was used, and the gas pressure in the plasma chamber 803 and the film forming chamber 804 was adjusted to 1.0 Pa. A plasma chamber 803 and a film forming chamber 804
The method of arranging the substrates was the same as in Example 1.
The internal stress of the a-Si: H film thus created is -30 k.
It was g / mm ² or less.

The magneto-optical disk thus prepared was evaluated in the same manner as in Example 1. As a result, it was impossible to evaluate other than the disk prepared from the substrate arranged in the center among the three substrates.

The aS obtained by the method of this comparative example
As a result of observing the characteristics of the i: H film in the same manner as in Example 1, it was found that the dielectric film having a predetermined film thickness could be uniformly formed in the three substrates as shown in Table 1. It was confirmed that the thickness of the dielectric film is uneven between the substrates even if there is only one placed in the center, and even if the substrates are of the same lot, it is confirmed that among the three substrates, the one placed in the center Other than the prepared dielectric film was not evaluated.

Further, a magneto-optical disk prepared from a substrate arranged in the center of a chamber in which a dielectric film having a uniform film thickness is formed has a large decrease in C / N ratio when stored under high temperature and high humidity conditions. And B. E. R. Was significantly increased.
Furthermore, the film forming rate was about 60 nm / min.

[0100]

[Table 1]

(Embodiment 2) Implementation was carried out except that the construction of the magneto-optical disk in Embodiment 1 was as follows and the film forming conditions of the first and second dielectric films were also as follows: A magneto-optical disk was prepared in the same manner as in Example 1. The magneto-optical disk thus prepared was evaluated in the same manner as in Example 1. The characteristics of the Si ₃ N ₄ film produced by this method were also evaluated in the same manner as in Example 1. The results are shown in Table-2.

[0102]

[Table 2]

(Comparative Example 2) First Si ₃ used in Example ₃
Film forming devices 103 and 10 for N ₄ film and second Si ₃ N ₄ film
5, means 8 for introducing microwaves into the plasma chamber from one end of the plasma chamber as shown in FIG.
01 and the electron cyclotron resonance (ECR) plasma CVD film forming apparatus provided with a coil 802 for generating electron cyclotron resonance in the plasma in the chamber, except that three magneto-optical disks were prepared in the same manner as in Example 3. Created at the same time.

In this Comparative Example, the Si ₃ N ₄ film was formed under the conditions that the internal stress of the Si ₃ N ₄ film is in the range of the stress allowed in the inorganic dielectric film for a magneto-optical disk: 0 to -30 kg.
/ Mm ² and the frequency is 2.4.
A microwave of 5 GHz was introduced from the waveguide 801 into the plasma chamber 803, and a coil 802 arranged outside the chamber generated a magnetic field 875 Gauss satisfying the electron cyclotron resonance condition in the container.

The microwave power was 650 W, the gas flow rate was SiH ₄ at 10 SCCM and N ₂ at 30 S.
CCM was used, and the gas pressure in the plasma chamber 803 and the film forming chamber 804 was adjusted to 1.0 Pa. The plasma chamber 803 and the film forming chamber 80
The configuration of No. 4 and the method of arranging the substrates were the same as those in Example 1.

The magneto-optical disk thus prepared was evaluated in the same manner as in Example 1. As a result, it was impossible to evaluate any disks other than the disk prepared from the substrate arranged in the center among the three substrates.

Si ₃ obtained by the method of this comparative example
As a result of observing the characteristics of the N ₄ film in the same manner as in Example 1, it was found that a dielectric film having a uniform film thickness was formed in the substrate as shown in Table 1 in the center of the three substrates. It was confirmed that there was unevenness in the thickness of the dielectric film between the substrates even if the substrates were the same lot, and the dielectric film formed on the substrate arranged in the center among the three substrates was prepared. Other than the body membrane was not evaluated.

Further, a magneto-optical disk prepared from a substrate arranged in the center of a chamber in which a dielectric film having a uniform film thickness is formed has a large decrease in C / N ratio when stored under high temperature and high humidity conditions. And B. E. R. Was significantly increased.
Furthermore, the film forming rate was about 60 nm / min.

[0109]

[Table 3]

(Examples 3 to 8) Example 1 is different from Example 1 except that the configuration of the magneto-optical disk and the film forming conditions of the first and second dielectric films are as shown in Table 3. A magneto-optical disk was prepared and evaluated in the same manner as in.

The characteristics of the inorganic dielectric film produced under the respective film forming conditions were evaluated in the same manner as in Example 1. The results are shown in Table-4.

[0112]

[Table 4]

(Embodiment 9) The phase-change type was carried out in the same manner as in Embodiment 3 except that a recording film made of an Sb-Te alloy was formed by a magnetron sputtering method instead of the magneto-optical recording film of Example 3. I made an optical disc. The characteristics of this optical disk were evaluated in the same manner as in Example 3.

The results are shown in Table 4.

The C / N ratio of the optical disc of this embodiment and the B.N. E. R. Is measured by an optical disc evaluation device (trade name:
OMS-2000; manufactured by Nakamichi Co., Ltd. was used.

[0116]

[Table 5]

(Embodiment 10) Five magneto-optical disks having the same structure as the magneto-optical disk prepared in Embodiment 4 were prepared.
It was formed at the same time by using the inorganic dielectric film forming apparatus shown in FIG.

The film forming apparatus of FIG. 6 used in this embodiment has a length of 532 mm in the substrate transport direction and a height of 144 mm.
A plasma chamber having a width of 182 mm, a film forming chamber having a length of 526 mm, a width of 182 mm, and a height of 100 mm is used, and the annular waveguide has a spatial cross-sectional dimension of 27 m.
m, the height was 96 mm 2, and the shape was such that the inner wall was in close contact with the outer wall of the plasma chamber.
The inner surface of the waveguide was coated with copper and then silver. The waveguide inner wall 607 has a length of 42
mm, width of 3 mm, rectangular slot 4 at 40 mm intervals
0 pieces were arranged.

As the distribution block, an Al-made block having an isosceles right triangle cross section and a long side length of 27 mm is used. The microwave is introduced into the inner wall of the annular waveguide at a position facing the microwave introduction portion. It was attached by welding so that it was evenly distributed in both directions.

Further, as the reflection plate, one made of Al having a right-angled isosceles triangle section and a short side length of 27 mm is used as shown in FIG. 6 (b).
Each corner of the inner wall of the annular waveguide was attached by welding as shown in FIG.

The film forming conditions for the first and second Si ₃ N ₄ films were as follows.

Gas type SiH ₄ , N ₂ Vacuum exhaust pressure 1 × 10 ⁻⁴ Pa Gas pressure 1.3 Pa Flow rate SiH ₄ : 200 SCCM N ₂ : 1000 SCCM Input power 1.5 kw Frequency 2.45 GHz

For SiH ₄ gas, gas introduction means 6
No. 12 is introduced into the film forming chamber, N ₂ gas is introduced into the plasma chamber from the gas introducing means 611, and Si _{3 is} deposited on the substrates arranged in a line in the substrate conveying direction in the film forming chamber.
A N ₄ film was formed.

In the present invention, a magneto-optical disk was prepared in the same manner as in Example 4 except for the method of forming the first Si ₃ N ₄ film and the second Si ₃ N ₄ film. The magneto-optical disk thus prepared was evaluated in the same manner as in Example 1, and the characteristics of the Si ₃ N ₄ film obtained by the method of this example were evaluated in the same manner as in Example 1. The results are shown in Table-5.

(Embodiment 11) In Embodiment 10, SiH
_A magneto-optical disk was prepared in the same manner as in Example 10 except that ₄ gas and N ₂ gas were mixed and introduced into the plasma chamber from the gas introduction means 611.

The magneto-optical disk thus obtained was evaluated in the same manner as in Example 1, and the characteristics of the SiH ₄ film obtained by this method were evaluated in the same manner as in Example 1.

The results are shown in Table-5.

[0128]

[Table 6]

[0129]

As described above, according to the present invention, an inorganic dielectric film for an optical recording medium, which has a low internal stress and an excellent enhancement effect and recording layer protection performance, is provided with a conventional plasma CV.
It is possible to form a film at a speed significantly exceeding the film forming speed of the D method, and it is possible to manufacture a high quality optical recording medium at low cost.

Further, according to the present invention, since a uniform and high-quality inorganic dielectric film for an optical recording medium can be formed regardless of the position of the substrate in the film forming chamber, continuous production of the optical recording medium is extremely easy. Therefore, it is possible to reduce the cost of a high quality optical recording medium.

[Brief description of drawings]

FIG. 1 is a schematic diagram of an apparatus for manufacturing an optical recording medium according to the present invention.

FIG. 2 is a schematic view of a film forming apparatus for an inorganic dielectric film of an optical recording medium according to the present invention. (A) A schematic perspective view of a film forming apparatus for an inorganic dielectric film. (B) Schematic sectional view of the film forming apparatus of FIG.

3 is a schematic view of an endless annular waveguide of the film forming apparatus of FIG. (A) A schematic perspective view of an endless annular waveguide of the film forming apparatus of FIG. 2. (B) A A line sectional view of Drawing 3 (a).

FIG. 4 is a schematic sectional view of an optical recording medium.

FIG. 5 is a schematic cross-sectional view of another embodiment of the endless annular waveguide that can be used in the present invention.

FIG. 6 is an explanatory view of another embodiment of a film forming apparatus for an inorganic dielectric film for an optical recording medium according to the present invention. (A) A schematic perspective view of an inorganic dielectric film forming apparatus for a rectangular optical recording medium according to the present invention. (B) BB line sectional drawing of FIG. 6 (a). (C) CC sectional view taken on the line of FIG.

FIG. 7 is an explanatory view of another embodiment of a film forming apparatus for an inorganic dielectric film for an optical recording medium according to the present invention. (A) A schematic perspective view of an inorganic dielectric film forming apparatus for a rectangular optical recording medium according to the present invention. (B) DD line sectional drawing of Fig.7 (a).

FIG. 8 is a schematic cross-sectional view of a conventional film forming apparatus for an inorganic dielectric film for an optical recording medium.

FIG. 9 is a schematic cross-sectional view of one embodiment of the endless annular waveguide according to the present invention.

[Explanation of symbols]

 100 substrate 101 substrate loading chamber 102 degassing chamber 103, 105 inorganic dielectric film deposition chamber 104 recording film deposition chamber 106 reflective film deposition chamber 107 substrate removal chamber 108 substrate holder 201 plasma chamber 202 deposition chamber 203 , 204 substrate transport path 205 annular waveguide 206 microwave introducing section 207, 208 gas introducing means 301 slot 302 distribution block 401 recording film 402, 403 inorganic dielectric film 404 reflective film 601 endless annular waveguide 602 film forming chamber 603 Microwave introducing means 604, 605 Substrate conveying path 606 Plasma chamber 607 Endless annular waveguide inner wall 608 Slot 609 Distribution block 611, 612 Gas introducing means 614 Reflecting block 701 Endless annular waveguide 702 Microwave introducing part 703 Endless Joshirubeha inner wall 704 slot 705 plasma chamber 706 distribution block 707 the reflective block

─────────────────────────────────────────────────── ───

[Procedure amendment]

[Submission date] June 8, 1994

[Procedure Amendment 1]

[Document name to be amended] Statement

[Name of item to be corrected] Claim 6

[Correction method] Change

[Correction content]

[Procedure Amendment 2]

[Document name to be amended] Statement

[Correction target item name] 0021

[Correction method] Change

[Correction content]

The endless annular waveguide 205 used in the present invention has an inner wall 205-1 and an outer wall 205-2, and a predetermined gap 205 is provided between the inner wall 205-1 and the outer wall 205-2.
-3. The inner wall of the annular waveguide is provided with perforations (slots) 301 for supplying microwaves to the plasma chamber.

[Procedure 3]

[Document name to be amended] Statement

[Name of item to be corrected] 0023

[Correction method] Change

[Correction content]

In the present invention, the microwave introducing means is constructed so that the microwave introducing direction is orthogonal to the outer wall of the annular waveguide as shown in FIG. 3 (b).
The tubular waveguide and the microwave introducing portion 206 may be arranged, or may be introduced in the tangential direction of the outer wall of the annular waveguide as shown in FIG. However, as shown in FIG. 3B, the tubular waveguide 205 and the microwave introducing section 206 are arranged such that the microwave introducing direction is orthogonal to the outer wall of the annular waveguide. The microwave introduced from the microwave introduction part into the annular waveguide is divided into two, and the microwave is guided in both directions of the annular waveguide 205 (see arrows E and F in FIG. 3B).
When the microwaves are propagated to, it is possible to generate an interference wave in the annular waveguide between the distributed microwaves, and usually the intensity of the microwave becomes the weakest. The microwave intensity can be compensated, and uniform microwaves can be introduced into the plasma chamber, and a high-quality inorganic dielectric film for an optical recording medium can be formed with a more uniform film thickness.

[Procedure amendment 4]

[Document name to be amended] Statement

[Name of item to be corrected] 0025

[Correction method] Change

[Correction content]

In this method, the distribution block has a shape capable of evenly distributing microwaves, for example, the triangular prism has a cross-sectional shape of an isosceles triangle and an apex angle sandwiched between two equal sides. The distribution block is arranged on the inner wall 205-1 so that the direction of the perpendicular line from the bottom to the bottom coincides with the direction of introduction of the microwave from the microwave introduction means, and the apex angle projects in the direction of introduction of the microwave. Alternatively, when the endless annular waveguide functioning as described above is used, the performance and uniformity of the formed inorganic dielectric film can be further improved. Further, in this embodiment, it is preferable to set the angle of the apex angle to 90 ° because the microwaves introduced into the annular waveguide 205 can be efficiently interfered with each other. It is also preferable to make the long side length of the distribution block equal to the distance between the inner wall and the outer wall of the annular waveguide in order to improve the microwave utilization efficiency.

[Procedure Amendment 5]

[Document name to be amended] Statement

[Correction target item name] 0026

[Correction method] Change

[Correction content]

The distribution block is not particularly limited as long as it is a microwave-reflecting block as described above. For example, metal or the like can be used, but Al is taken into consideration in consideration of microwave reflection efficiency and durability. A glass distribution block whose surface is coated with chrome or Al can be used.

[Procedure correction 6]

[Document name to be amended] Statement

[Name of item to be corrected] 0027

[Correction method] Change

[Correction content]

Next, the interval (d) between the plurality of slots 301 provided on the inner wall of the endless annular waveguide used in the present invention.
Is particularly limited as long as microwaves capable of achieving a plasma density (for example, 10 ¹¹ pieces / cm ³ or more, particularly 10 ¹² pieces / cm ³ or more) necessary for forming an inorganic dielectric film are introduced into the plasma chamber However, for example, when the endless annular waveguide is configured by using the distribution block as described above, the slot interval (d) is set so that the interference wave of the microwave generated in the endless annular waveguide is " It is preferable that the wavelength is ½ of the wavelength in the tube or an integral multiple thereof so that the slot matches the “antinode”.

Claims (32)

[Claims] 1. A method of manufacturing an optical recording medium having a laminated film of a recording film and an inorganic dielectric film on a substrate, wherein the inorganic dielectric film has a microwave introducing means including an endless annular waveguide. A method for manufacturing an optical recording medium, which comprises forming a film using a plasma processing apparatus. 2. The plasma processing apparatus is provided with a plasma chamber in which the endless annular waveguide is arranged on an outer peripheral portion, and microwaves are supplied to the plasma chamber via the endless annular waveguide. A device for generating plasma in a chamber and depositing the inorganic dielectric film on a substrate arranged in the plasma chamber, wherein the endless annular waveguide has a microwave introduction part connected to a microwave power source. 2. The method of manufacturing an optical recording medium according to claim 1, further comprising a plurality of slots provided inside the annular waveguide and perforated at predetermined intervals. 3. The method of manufacturing an optical recording medium according to claim 2, wherein the plurality of slots are provided at intervals corresponding to ½ of a guide wavelength of a microwave introduced into the annular waveguide. 4. The method of manufacturing an optical recording medium according to claim 2, wherein the microwave introduction part is arranged so that microwaves are introduced toward the center of the annular waveguide. 5. The outer peripheral surface of the inner wall of the annular waveguide on which the microwave introduced from the microwave introducing portion first collides,
The method of manufacturing an optical recording medium according to claim 4, further comprising a distribution block that distributes the microwave and propagates the microwave to both sides in the annular waveguide. 6. The method of manufacturing an optical recording medium according to claim 2, wherein a magnetic field generating means is arranged near the slot on the inner peripheral surface of the inner wall of the environmental waveguide. 7. The method of manufacturing an optical recording medium according to claim 1, wherein the inorganic dielectric film is formed by reaction of a plurality of kinds of gases. 8. The method of manufacturing an optical recording medium according to claim 2, wherein the plasma chamber has a plurality of gas introducing means. 9. The method of manufacturing an optical recording medium according to claim 8, wherein a reaction gas and a raw material gas are introduced into the plasma chamber from the plurality of gas introduction units to form a film. 10. An inorganic dielectric film containing a Si-based compound is formed by using at least one gas selected from inorganic silanes, organic silanes, and halosilanes as a source gas and using a reaction gas. 7. A method for manufacturing an optical recording medium according to 7. 11. The optical recording medium according to claim 7, wherein at least one gas selected from an organic metal and a metal halide is used as a raw material gas, and an inorganic dielectric film containing a metal compound is formed using a reaction gas. Manufacturing method. 12. The method for producing an optical recording medium according to claim 1, wherein the recording film contains at least one of a rare earth element and a transition metal. 13. The method of manufacturing an optical recording medium according to claim 1, wherein the recording film is an amorphous magnetic recording film containing a rare earth and a transition metal. 14. The method for producing an optical recording medium according to claim 1, wherein the recording film contains a chalcogenide element. 15. The method of manufacturing an optical recording medium according to claim 2, wherein the plasma chamber has a cavity having a rectangular cross section. 16. The method of manufacturing an optical recording medium according to claim 2, wherein the plasma chamber has a cylindrical shape. 17. A method of manufacturing an optical recording medium having a laminated film of a recording film and an inorganic dielectric film on a substrate, the step of forming the recording film on the substrate; and the inorganic material on the substrate. A step of forming a dielectric film using a microwave plasma CVD method; and a microwave connected to a microwave power source, the plasma chamber being arranged in the microwave plasma CVD method, and arranged so as to surround the plasma chamber. A method of manufacturing an optical recording medium, comprising: using a microwave plasma processing apparatus having an endless annular waveguide having an introduction part and having a plurality of slots for introducing a microwave into the plasma chamber. 18. The method of manufacturing an optical recording medium according to claim 17, wherein the plurality of slots are provided at intervals corresponding to ½ of a guide wavelength of a microwave introduced into the annular waveguide. 19. The method of manufacturing an optical recording medium according to claim 17, wherein the microwave introduction part is arranged so that the microwave is introduced toward the center of the annular waveguide. 20. A distribution block for distributing the microwave to the outer peripheral surface of the inner wall of the annular waveguide where the microwave introduced from the microwave introducing portion first collides and propagates to both sides in the annular waveguide. The method for manufacturing an optical recording medium according to claim 19, further comprising: 21. The method of manufacturing an optical recording medium according to claim 17, wherein a magnetic field generating means is disposed near the slot on the inner peripheral surface of the inner wall of the annular waveguide. 22. The method of manufacturing an optical recording medium according to claim 17, wherein the inorganic dielectric film is formed by a reaction of plural kinds of gases. 23. The method of manufacturing an optical recording medium according to claim 17, wherein the plasma chamber has a plurality of gas introducing means. 24. The method of manufacturing an optical recording medium according to claim 22, wherein a reaction gas and a raw material gas are introduced into the plasma chamber from the plurality of gas introduction units to form a film. 25. At least one gas selected from inorganic silanes, organic silanes, and halosilanes is used as a source gas, and an inorganic dielectric film containing a Si-based compound is formed using a reaction gas. 22. A method of manufacturing an optical recording medium of 22. 26. The optical recording medium according to claim 22, wherein at least one gas selected from organic metals and metal halides is used as a source gas, and an inorganic dielectric film containing a metal compound is formed using a reaction gas. Manufacturing method. 27. The method of manufacturing an optical recording medium according to claim 17, wherein the recording film contains at least one of a rare earth element and a transition metal. 28. The method of manufacturing an optical recording medium according to claim 17, wherein the recording film is an amorphous magnetic recording film containing a rare earth and a transition metal. 29. The method of manufacturing an optical recording medium according to claim 17, wherein the recording film contains a chalcogenide element. 30. The method of manufacturing an optical recording medium according to claim 17, wherein the plasma chamber has a cavity having a rectangular cross section. 31. The method of manufacturing an optical recording medium according to claim 17, wherein the plasma chamber has a cylindrical shape. 32. An optical recording medium having a laminated film of a recording film and an inorganic dielectric film on a substrate, wherein the inorganic dielectric film has a microwave introducing means having an endless annular waveguide. An optical recording medium characterized by being formed by using a film.