JP3218272B2 - Magnetic sensing element - Google Patents
Magnetic sensing elementInfo
- Publication number
- JP3218272B2 JP3218272B2 JP08655395A JP8655395A JP3218272B2 JP 3218272 B2 JP3218272 B2 JP 3218272B2 JP 08655395 A JP08655395 A JP 08655395A JP 8655395 A JP8655395 A JP 8655395A JP 3218272 B2 JP3218272 B2 JP 3218272B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- thin film
- sensing element
- composition
- atomic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000005291 magnetic effect Effects 0.000 title claims description 101
- 239000010409 thin film Substances 0.000 claims description 35
- 230000000694 effects Effects 0.000 claims description 17
- 239000000203 mixture Substances 0.000 claims description 17
- 239000010408 film Substances 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 238000001514 detection method Methods 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- 238000000034 method Methods 0.000 claims 1
- 230000007797 corrosion Effects 0.000 description 10
- 238000005260 corrosion Methods 0.000 description 10
- 230000004907 flux Effects 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 229910000702 sendust Inorganic materials 0.000 description 5
- 229910052692 Dysprosium Inorganic materials 0.000 description 4
- 229910052772 Samarium Inorganic materials 0.000 description 4
- 229910052684 Cerium Inorganic materials 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000696 magnetic material Substances 0.000 description 3
- 230000005415 magnetization Effects 0.000 description 3
- 230000035699 permeability Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229910019236 CoFeB Inorganic materials 0.000 description 1
- 229910007991 Si-N Inorganic materials 0.000 description 1
- 229910006294 Si—N Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
Landscapes
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
- Thin Magnetic Films (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、磁気インピーダンス効
果を利用した磁気検出素子に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic sensing element utilizing a magnetic impedance effect.
【０００２】[0002]
【従来の技術】従来、磁気センサとしては、ＭＲ（磁気
抵抗効果）センサがあり、微弱磁界の検出が可能である
ことや、形状の微細化に適するなどの特徴を持ち、磁気
記録用ヘッドをはじめ各種計測用センサとして研究が進
められている。しかし、前記ＭＲセンサに用いられる強
磁性体の異方性磁気抵抗効果ではＭＲ比は５〜６％と低
く、このことは磁気記録の高密度化、各種磁気センサの
高分解能化の妨げとなってきた。近年、人工格子系の磁
性材料において、ＭＲ比が数１０％となる現象が見出さ
れ、高感度磁気センサの実現が期待されているが、これ
らの動作には抵抗の外部磁界依存性にヒステリシスが現
れること、強磁界印加、極低温などが必要であることな
ど実用化に際して課題も多い。2. Description of the Related Art Conventionally, as a magnetic sensor, there is an MR (magnetoresistive effect) sensor, which has features such as being capable of detecting a weak magnetic field and being suitable for miniaturization of a shape. Initially, research is proceeding as sensors for various measurements. However, in the anisotropic magnetoresistance effect of the ferromagnetic material used in the MR sensor, the MR ratio is as low as 5 to 6%, which hinders high density of magnetic recording and high resolution of various magnetic sensors. Have been. In recent years, a phenomenon in which the MR ratio is several tens of percent has been found in a magnetic material of an artificial lattice system, and the realization of a high-sensitivity magnetic sensor is expected. However, these operations have a hysteresis due to the dependence of the resistance on the external magnetic field. There are many problems in practical use, such as the appearance of phenomena and the necessity of applying a strong magnetic field and cryogenic temperature.
【０００３】[0003]
【発明が解決しようとする課題】最近、これらの磁性体
の磁気抵抗効果を用いた磁気センサとは別に、磁気イン
ピーダンス効果を利用した磁気検出素子（以下、ＭＩ素
子という）が提案されている。Recently, a magnetic sensing element (hereinafter, referred to as MI element) utilizing a magnetic impedance effect has been proposed in addition to a magnetic sensor utilizing the magnetoresistance effect of these magnetic materials.
【０００４】磁気インピーダンス効果は、アモルファス
ワイヤに高周波電流を流すと、図４に示すように、ワイ
ヤ両端間電圧の振幅が数ガウスの微小な外部磁界で数１
０％増大する現象のことである。このＭＩ素子の提案で
はほとんどがアモルファスワイヤを用いたものであり、
素子を構成する磁性材に薄膜を用いるものは少ない。As shown in FIG. 4, when a high-frequency current is applied to an amorphous wire, the magneto-impedance effect is expressed by a small external magnetic field having a small external magnetic field whose voltage across the wire is several gauss.
This is a phenomenon that increases by 0%. Most of the proposals for this MI element use an amorphous wire.
Few devices use a thin film as the magnetic material constituting the device.
【０００５】発表されているものとして、１９９４年の
応用磁気学会における名古屋大学、内山剛、毛利佳年雄
氏らの「ＣｏＦｅＢアモルファススパッタ膜の磁気イン
ピーダンス効果」がある。この中でインピーダンスの変
化率は最大１０％であり、感度は変化が最も急な場所で
０．８％／Oeであるとしている。ＭＩ素子の小型化や電
極，リード線の作製を考えるとワイヤよりも磁性薄膜の
方が有利であるが、磁性薄膜のタイプで最大１０％の変
化率では小さい。As a publication, there is "Magneto-impedance effect of amorphous CoFeB sputtered film" by Nagoya University, Tsuyoshi Uchiyama and Yoshinori Mohri at the Japan Society of Applied Magnetics in 1994. Among them, the rate of change of impedance is 10% at the maximum, and the sensitivity is 0.8% / Oe at the place where the change is the steepest. In consideration of miniaturization of the MI element and production of electrodes and lead wires, a magnetic thin film is more advantageous than a wire, but the change rate of a maximum of 10% is small in a magnetic thin film type.
【０００６】ＭＩ素子に用いられる薄膜としては、以下
の特性が要求される。The following characteristics are required for a thin film used for an MI element.
【０００７】１．磁気ヘッド等の閉磁路回路に組込まれ
る場合、長手方向の透磁率が高いことはもちろん、素子
の小型化による磁束の飽和を避けるため、飽和磁束密度
が高いこと。[0007] 1. When incorporated in a closed magnetic circuit such as a magnetic head, the saturation magnetic flux density must be high in order to avoid magnetic flux saturation due to downsizing of the element, as well as high magnetic permeability in the longitudinal direction.
【０００８】２．高温、高湿下の条件で磁気特性の劣化
を生じない優れた耐食性を有すること。[0008] 2. Excellent corrosion resistance that does not cause deterioration of magnetic properties under high temperature and high humidity conditions.
【０００９】３．ガラスボンディングの高温に耐えるこ
と。3. Withstand the high temperature of glass bonding.
【００１０】４．誘導異方性を有する膜であること。[0010] 4. The film must have induced anisotropy.
【００１１】そこで、本発明の課題は、これらの要求を
満足する磁性薄膜から構成され、インピーダンスの変化
率が大きく、高感度の磁気検出素子を提供することにあ
る。SUMMARY OF THE INVENTION An object of the present invention is to provide a high-sensitivity magnetic sensing element composed of a magnetic thin film satisfying these requirements, having a large impedance change rate.
【００１２】[0012]
【課題を解決するための手段】上記の課題を解決するた
め、本発明の第１の磁気検出素子では、ａ，ｂ，ｃ，
ｄ，ｅ，ｆは原子％の組成比の値を示し、ＭIは元素の
Ｚｒ，Ｈｆ，Ｎｂ，Ｔａ，Ｍｏ，Ｗのうち少なくとも一
種類、ＭIIは元素のＡｇ，Ｃｕのうち少なくとも一方で
あるとして、組成が Ｆｅa Ａｌb ＭIc ＭIId Ｃe Ｏf の組成式で表され、前記ａ，ｂ，ｃ，ｄ，ｅ，ｆのそれ
ぞれの値は、 ａ＋ｂ＋ｃ＋ｄ＋ｅ＋ｆ＝１００ ０．５≦ｂ≦２０ ２≦ｃ≦２５ ０．０５≦ｄ≦５ ０．５≦ｅ≦２５ ０．２≦ｆ≦６ である磁性薄膜から構成され、該磁性薄膜は検出対象の
外部磁界が印加される方向に対して膜面内で直交する方
向が磁化容易軸方向となるように誘導異方性がつけられ
ているものとした。In order to solve the above-mentioned problems, a first magnetic sensing element according to the present invention comprises a, b, c,
d, e, and f indicate the values of the composition ratio of atomic%, MI is at least one of the elements Zr, Hf, Nb, Ta, Mo, and W, and MII is at least one of the elements Ag and Cu. The composition is represented by a composition formula of Fea Alb Mic MIId Ce Of, and the respective values of a, b, c, d, e, and f are a + b + c + d + e + f = 100 0.5 ≦ b ≦ 202 2 ≦ c ≦ 25 0.05 ≦ d ≦ 5 0.5 ≦ e ≦ 25 0.2 ≦ f ≦ 6, wherein the magnetic thin film is a detection target.
The direction perpendicular to the direction in which the external magnetic field is applied in the film plane
Induced anisotropy is applied so that the direction is the easy axis direction.
It was assumed .
【００１３】また、第２の磁気検出素子では、上記第１
の磁気検出素子の磁性薄膜の組成に更にＣｅ，Ｄｙ，Ｓ
ｍ等の希土類元素の少なくとも１種類を０．１〜５原子
％添加した組成の磁性薄膜から構成され、該磁性薄膜は
検出対象の外部磁界が印加される方向に対して膜面内で
直交する方向が磁化容易軸方向となるように誘導異方性
がつけられているものとした。[0013] In the second magnetic sensing element, the first magnetic sensing element is provided.
In addition, Ce, Dy, S
a magnetic thin film having a composition in which at least one kind of rare earth element such as m is added in an amount of 0.1 to 5 atomic%.
Within the film plane in the direction in which the external magnetic field to be detected is applied
Induced anisotropy so that the orthogonal direction is the easy axis direction
It is assumed to be attached .
【００１４】[0014]
【作用】上記磁気検出素子の磁性薄膜では、Ｚｒ，Ｈ
ｆ，Ｎｂ，Ｔａ，Ｍｏ，Ｗのうち少なくとも一種類（以
下、ＭIという）が添加されたＦｅ−Ｃ−Ｏ系磁性薄膜
にＡｌを添加し、更にＡｇ，Ｃｕの少なくとも一方を添
加することにより、保磁力，磁歪等をあまり変化させる
ことなく、耐食性を向上させることができる。In the magnetic thin film of the magnetic sensing element, Zr, H
By adding Al to a Fe-CO-based magnetic thin film to which at least one of f, Nb, Ta, Mo, and W (hereinafter referred to as MI) is added, and further adding at least one of Ag and Cu. Corrosion resistance can be improved without changing coercive force, magnetostriction and the like.
【００１５】さらに、Ｃｅ，Ｓｍ，Ｄｙ等の希土類元素
の少なくとも１種類を添加することにより耐食性がさら
に向上する。これは、Ａｌ，Ｃｕ，Ａｇ，Ｃｅ，Ｓｍ，
Ｄｙ等がＦｅに対し直接酸化を抑える様に作用している
ことによるものと思われる。Further, the corrosion resistance is further improved by adding at least one of rare earth elements such as Ce, Sm, and Dy. This is because Al, Cu, Ag, Ce, Sm,
This is probably because Dy and the like act directly on Fe to suppress oxidation.
【００１６】また、各元素の添加量を上記のようにした
理由は以下の通りである。The reason why the addition amount of each element is as described above is as follows.
【００１７】Ａｌについては、耐食性を向上させ、磁気
特性を劣化させない範囲としては０．５〜２０原子％、
望ましくは１〜１０原子％である。２０原子％を越える
と磁歪が３０×１０-7を越え大きくなってしまう。さら
に飽和磁束密度も低下する。また、０．５原子％より少
ないと耐食性向上の効果が表われない。For Al, the range of improving corrosion resistance and not deteriorating magnetic properties is 0.5 to 20 atomic%.
Desirably, it is 1 to 10 atomic%. If it exceeds 20 atomic%, the magnetostriction will exceed 30 × 10 -7 and become large. Further, the saturation magnetic flux density decreases. On the other hand, if it is less than 0.5 atomic%, the effect of improving corrosion resistance is not exhibited.
【００１８】ＭI，Ｃについては、ＭIとＣが炭化物の微
細結晶を作り、これがＦｅの粒成長を抑え、軟磁性を高
温まで維持する役割をするが、各々２原子％，０．５原
子％より少ないと、その効果が出ず、また２５原子％を
越えると良好な軟磁気特性が得られない。したがってそ
れぞれ上記の添加量となるが、より望ましくはＭI：３
〜１５原子％，Ｃ：３〜１５原子％である。With respect to MI and C, MI and C form fine crystals of carbide, which suppress the grain growth of Fe and maintain the soft magnetism at high temperatures. If the amount is less than this, the effect cannot be obtained. If the amount exceeds 25 atomic%, good soft magnetic characteristics cannot be obtained. Therefore, the respective addition amounts are as described above, and more preferably, MI: 3
-15 atomic%, C: 3-15 atomic%.
【００１９】Ａｇ，Ｃｕについては、０．０５原子％よ
り少ないと磁気特性の向上、耐食性の改善が表われず、
５原子％より多いと磁気特性が劣化してしまう。Ａｇ，
Ｃｕは結晶粒を微細化させる効果があることにより、磁
気特性が向上するものと思われる。If the content of Ag and Cu is less than 0.05 atomic%, no improvement in magnetic properties and no improvement in corrosion resistance will be exhibited.
If it is more than 5 atomic%, the magnetic properties will be deteriorated. Ag,
It is thought that Cu has the effect of refining the crystal grains, thereby improving the magnetic properties.
【００２０】Ｏは、膜の電気抵抗を上げ、高周波特性を
向上させるとともに、Ａｌ、（Ａｇ，Ｃｕ）、（Ｃｅ，
Ｓｍ，Ｄｙ等）と共添することにより、耐食性を向上さ
せる役割をしているが、０．２原子％より少ないと、そ
の効果が表われず、６原子％を越えると軟磁気特性の劣
化が起る。O raises the electrical resistance of the film, improves the high frequency characteristics, and further improves the Al, (Ag, Cu), (Ce,
(Sm, Dy, etc.) to improve the corrosion resistance. However, if it is less than 0.2 atomic%, the effect is not exhibited, and if it exceeds 6 atomic%, the soft magnetic property deteriorates. Happens.
【００２１】Ｃｅ，Ｓｍ，Ｄｙ等の希土類元素は、耐食
性を向上する効果があるが、０．１原子％ではその効果
が表われず、５原子％より多く添加すると、軟磁気特性
が劣化してしまう。Rare earth elements such as Ce, Sm and Dy have the effect of improving the corrosion resistance. However, the effect is not exhibited at 0.1 atomic%, and when added at more than 5 atomic%, the soft magnetic properties deteriorate. Would.
【００２２】上記本発明の第１と第２の磁気検出素子の
磁性薄膜は、以上のような理由で決定した組成であるた
め、微結晶膜となり、良好な軟磁気特性、高飽和磁束密
度を有し、しかも耐食性にすぐれ、高温、高湿下の条件
で磁気特性の劣化を生じない。また高温まで軟磁気特性
を維持しガラスボンディングの高温に耐え、低磁歪でも
ある。そして、このような磁性薄膜から図５に示すよう
に、外部磁界Ｈexに応じたインピーダンス変化による出
力電圧の変化率Ｖ／Ｖ（Ｈex＝０）が大きく、高感度の
磁気検出素子を構成できる。図５は、上記本発明の第１
の磁気検出素子の例として、Ｆｅ−Ａｌ−Ｎｂ−Ｔａ−
Ｃｕ−Ｃ−Ｏ薄膜から構成した素子、Ｆｅ−Ａｌ−Ｎｂ
−Ｔａ−Ａｇ−Ｃ−Ｏ薄膜から構成した素子、及び比較
例としてセンダストのＦｅ−Ａｌ−Ｓｉ−Ｎ薄膜から構
成した素子、並びに参考として８２Ｎｉ−ＦｅのＭＲ素
子のそれぞれの外部磁界による出力特性を示している。Since the magnetic thin films of the first and second magnetic sensing elements of the present invention have the composition determined for the above reasons, they become microcrystalline films and have good soft magnetic characteristics and high saturation magnetic flux density. It has excellent corrosion resistance and does not cause deterioration of magnetic properties under high temperature and high humidity conditions. It also maintains soft magnetic properties up to high temperatures, withstands the high temperatures of glass bonding, and has low magnetostriction. From such a magnetic thin film, as shown in FIG. 5, the rate of change V / V (Hex = 0) of the output voltage due to the impedance change according to the external magnetic field Hex is large, and a highly sensitive magnetic detection element can be configured. FIG. 5 shows the first embodiment of the present invention.
Fe-Al-Nb-Ta-
Element composed of Cu-CO thin film, Fe-Al-Nb
Output characteristics of an element composed of a Ta-Ag-CO thin film, an element composed of a Fe-Al-Si-N thin film of Sendust as a comparative example, and an 82Ni-Fe MR element as a reference by an external magnetic field Is shown.
【００２３】[0023]
【実施例】以下、図を参照して本発明の実施例を説明す
る。本発明を適用したＭＩ素子のサンプルを作製するた
め、非磁性のセラミックス基板（ＴｉＯ，ＣａＯ系）
に、微結晶系Ａタイプの磁性薄膜として、組成が Ｆｅ66.3Ａｌ9.5Ｔａ5.0Ｎｂ1.6Ｃ11.8Ｏ5.6Ａｇ0.2 である薄膜を対向ターゲットスパッタリング装置により
成膜した。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. Non-magnetic ceramic substrate (TiO, CaO-based) to produce a sample of the MI element to which the present invention is applied
Then, as a microcrystalline A type magnetic thin film, a thin film having a composition of Fe 66.3 Al 9.5 Ta 5.0 Nb 1.6 C 11.8 O 5.6 Ag 0.2 was formed by a facing target sputtering apparatus.
【００２４】また、他のセラミックス基板に、微結晶系
Ｂタイプの磁性薄膜として、組成が Ｆｅ64.3Ａｌ9.5Ｔａ5.0Ｎｂ1.6Ｃ11.8Ｏ5.6Ｃｕ0.2Ｄ
ｙ2 である薄膜を成膜した。On another ceramic substrate, as a microcrystalline B type magnetic thin film, the composition is Fe 64.3 Al 9.5 Ta 5.0 Nb 1.6 C 11.8 O 5.6 Cu 0.2 D
It was formed a thin film is y 2.
【００２５】更に、比較例のサンプルを作製するため、
他のセラミックス基板に、センダスト系の磁性薄膜とし
て、組成が Ｆｅ68.5Ｓｉ15.8Ａｌ9.4Ｎ6.3 である薄膜を成膜した。Further, in order to prepare a sample of the comparative example,
A thin film having a composition of Fe 68.5 Si 15.8 Al 9.4 N 6.3 was formed as a sendust-based magnetic thin film on another ceramic substrate.
【００２６】そして、それぞれのセラミックス基板を、
図１に示すように、磁性薄膜１を成膜した成膜面の大き
さを幅０．２mm×長さ８mmとし、高さを１mmとした長方
形に切断し、磁性薄膜１とセラミックス基板２からなる
ＭＩ素子本体を形成した。Then, each of the ceramic substrates is
As shown in FIG. 1, the magnetic thin film 1 was cut into a rectangular shape having a size of 0.2 mm in width × 8 mm in length and a height of 1 mm from the magnetic thin film 1 and the ceramic substrate 2. The resulting MI element body was formed.
【００２７】なお、同じ組成の磁性薄膜１で磁場中熱処
理により磁化容易軸方向が、磁気検出のために磁性薄膜
１に高周波の駆動電流が印加される方向（検出対象の外
部磁界が印加される方向であって薄膜１の長手方向）に
平行になるように誘導異方性をつけたものと、磁化容易
軸方向が駆動電流の印加方向に対し膜面内で直交する幅
方向となるように異方性をつけたものを用意し、さらに
その磁化容易軸方向と困難軸方向の異方性の強さＨkを
異ならせたものを用意した。In the magnetic thin film 1 having the same composition, the direction of the axis of easy magnetization is determined by heat treatment in a magnetic field, and the direction of application of a high-frequency drive current to the magnetic thin film 1 for magnetic detection (an external magnetic field to be detected is applied). Direction and a direction parallel to the longitudinal direction of the thin film 1) so that the direction of easy axis is the width direction orthogonal to the direction of application of the driving current in the film plane. Anisotropic materials were prepared, and those having different anisotropy strengths Hk in the easy axis direction and the hard axis direction were prepared.
【００２８】このように用意したＭＩ素子本体のそれぞ
れを、図２に示すように、プリント基板３に対し固定
し、磁性薄膜１の両端部のそれぞれを端子部として半田
４で接続して、ＭＩ素子のサンプルのそれぞれを作製し
た。各サンプルの磁性薄膜の組成、飽和磁束密度Ｂｓ、
膜厚、長手方向と幅方向の１ＭＨｚでの透磁率μ、異方
性の大きさＨk、保磁力Ｈｃ、磁化容易軸方向を下記の
表１に示す。Each of the prepared MI element bodies is fixed to a printed circuit board 3 as shown in FIG. 2, and both ends of the magnetic thin film 1 are connected to each other by solder 4 as terminals. Each of the device samples was prepared. The composition of the magnetic thin film of each sample, the saturation magnetic flux density Bs,
Table 1 below shows the film thickness, the magnetic permeability μ at 1 MHz in the longitudinal and width directions, the magnitude of anisotropy Hk, the coercive force Hc, and the direction of the easy axis of magnetization.
【００２９】[0029]
【表１】 [Table 1]
【００３０】この表１からわかるように、微結晶系Ａタ
イプのサンプル３〜６とＢタイプのサンプル７〜１２の
いずれにおいてもセンダスト薄膜のサンプル１，２より
飽和磁束密度Ｂｓ、透磁率μが高く、保磁力Ｈｃが低
く、優れた磁気特性を有している。As can be seen from Table 1, the saturation magnetic flux density Bs and the magnetic permeability μ of Samples 3 to 6 of the microcrystalline type A and Samples 7 to 12 of the B type were higher than those of Sendust thin film samples 1 and 2. It is high, has low coercive force Hc, and has excellent magnetic properties.
【００３１】この表１のサンプル１〜１２について出力
特性を測定した。すなわち、図３に示すように、ヘルム
ホルツコイル５によりサンプル６の長手方向（磁性薄膜
１の長手方向）に外部磁界を印加するとともに、駆動電
流源７から周波数１００ＭＨｚで３０mAp-pの高周波駆
動電流を印加し、外部磁界を±１０Oe変化させ、それに
よる両端の端子間の電圧変化を測定した。The output characteristics of the samples 1 to 12 in Table 1 were measured. That is, as shown in FIG. 3, an external magnetic field is applied in the longitudinal direction of the sample 6 (longitudinal direction of the magnetic thin film 1) by the Helmholtz coil 5, and a high-frequency driving current of 30 mAp-p at a frequency of 100 MHz is supplied from the driving current source 7. Then, the external magnetic field was changed by ± 10 Oe, and the voltage change between the terminals at both ends was measured.
【００３２】その結果、電圧変化は図４の様なカーブに
なった。図４においてＶMAXは外部磁界の±１０Oeの変
化に対する最大電圧変化率、ＨMAXは最大電圧変化を示
す印加磁界、ΔＶは単位磁界当たりの電圧変化率（％／
Oe）である。磁気センサーとして用いる場合、ＶMAXが
大きく、ΔＶも大きい方が有利である。各サンプルのＶ
MAx，ＨMAX，ΔＶを下記の表２に示す。As a result, the voltage change became a curve as shown in FIG. In FIG. 4, VMAX is the maximum voltage change rate for a change of ± 10 Oe in the external magnetic field, HMAX is the applied magnetic field indicating the maximum voltage change, and ΔV is the voltage change rate per unit magnetic field (% /
Oe). When used as a magnetic sensor, it is advantageous that VMAX is large and ΔV is large. V of each sample
MAx, HMAX, and ΔV are shown in Table 2 below.
【００３３】[0033]
【表２】 [Table 2]
【００３４】この表２からわかるように、センダスト系
のサンプル１，２について、駆動電流印加方向に直交す
る幅方向に磁化容易軸をつけた場合と平行な長手方向に
容易軸をつけた場合で、ＶMAXはそれぞれ１８．７％、
２．９％と明らかに前者の方が大きい。また、その変化
率ΔＶも前者の方が大きい。最大電圧変化を示す印加磁
界ＨMAXは後者の方が小さい。As can be seen from Table 2, with respect to Sendust samples 1 and 2, the case where the easy axis is provided in the width direction perpendicular to the driving current application direction and the case where the easy axis is provided in the longitudinal direction parallel to the drive current application direction. , VMAX are 18.7% each,
The former is clearly larger at 2.9%. Also, the change rate ΔV is larger in the former case. The applied magnetic field HMAX showing the maximum voltage change is smaller in the latter.
【００３５】次に、微結晶系タイプＡ，Ｂについてみる
と、サンプル３，７に示す様に駆動電流印加方向に直交
する幅方向に容易軸をつけた場合の方がやはりＶMAX，
ΔＶともに大きく、センダスト系のサンプル１，２に較
べ２倍〜３倍近いＶMAXを示す。また、磁化容易軸方向
と困難軸方向の異方性の大きさＨkとＶMAXの関係を見る
と、 微結晶系タイプＡ： サンプル６ Ｈk ０．２Oe→ＶMAX ２５．４％ サンプル３ Ｈk ３．３Oe→ＶMAX ２８．３％ サンプル５ Ｈk１０．０Oe→ＶMAX ２１．４％ 微結晶系タイプＢ： サンプル９ Ｈk ０．１Oe→ＶMAX ２９．６％ サンプル７ Ｈk １．１Oe→ＶMAX ５０．４％ サンプル１２ Ｈk ２．３Oe→ＶMAX ４９．４％ サンプル１１ Ｈk ４．７Oe→ＶMAX ４８．０％ サンプル１０ Ｈk１２．０Oe→ＶMAX ４１．０％ の様に１〜５Oe位の範囲でＶMAXが大きいことがわか
る。Next, regarding microcrystal type A and B, as shown in samples 3 and 7, VMAX, and VMAX, when the easy axis is provided in the width direction orthogonal to the driving current application direction.
ΔV is large, and shows VMAX that is nearly two to three times as large as Sendust samples 1 and 2. Looking at the relationship between the magnitudes of anisotropy Hk and VMAX in the easy axis direction and the hard axis direction, microcrystalline type A: sample 6 Hk 0.2 Oe → VMAX 25.4% sample 3 Hk 3.3 Oe → VMAX 28.3% Sample 5 Hk 10.0 Oe → VMAX 21.4% Microcrystalline type B: Sample 9 Hk 0.1 Oe → VMAX 29.6% Sample 7 Hk 1.1 Oe → VMAX 50.4% Sample 12 Hk 2.3 Oe → VMAX 49.4% Sample 11 Hk 4.7 Oe → VMAX 48.0% Sample 10 Hk 12.0 Oe → VMAX 41.0% As can be seen, VMAX is large in the range of 1 to 5 Oe.
【００３６】以上のように微結晶系タイプＡ，Ｂの磁性
薄膜で磁化容易軸方向が膜面内で駆動電流印加方向に直
交するように誘導異方性をつけ、かつその異方性の大き
さＨkを１〜５Oeの範囲とすることにより、ＶMAxとΔＶ
を大きくでき、例えばサンプル７ではＶMAX が５０．４
％、ΔＶが１１．９％／Oeとなり、インピーダンス変化
率が大きく、高感度のＭＩ素子を得ることができる。As described above, in the magnetic thin films of the microcrystalline type A and B, the induced anisotropy is provided so that the direction of the axis of easy magnetization is orthogonal to the driving current application direction in the film plane, and the magnitude of the anisotropy is provided. By setting Hk in the range of 1 to 5 Oe, VMax and ΔV
Can be increased, for example, in sample 7, VMAX is 50.4
%, ΔV is 11.9% / Oe, and the impedance change rate is large, and a highly sensitive MI element can be obtained.
【００３７】[0037]
【発明の効果】以上の説明から明らかなように、本発明
によれば、磁気インピーダンス効果を利用した磁気検出
素子において、良好な軟磁気特性、高飽和磁束密度を有
し、しかも耐食性にすぐれ、高温、高湿下の条件で磁気
特性の劣化を生じず、また高温まで軟磁気特性を維持し
ガラスボンディングの高温に耐え、低磁歪でもあるとい
う優れた磁性薄膜からインピーダンスの変化率が大き
く、高感度の磁気検出素子を構成できるという優れた効
果が得られる。As is apparent from the above description, according to the present invention, a magnetic sensing element utilizing the magneto-impedance effect has good soft magnetic properties, high saturation magnetic flux density, and excellent corrosion resistance. Deterioration of magnetic properties does not occur under conditions of high temperature and high humidity, and the rate of change of impedance is large due to the excellent magnetic thin film, which maintains soft magnetic properties up to high temperatures, withstands the high temperature of glass bonding, and has low magnetostriction. An excellent effect that a sensitive magnetic detecting element can be formed can be obtained.
【図１】本発明の実施例のＭＩ素子本体のサンプルの構
造と寸法を示す斜視図である。FIG. 1 is a perspective view showing the structure and dimensions of a sample of an MI element body according to an embodiment of the present invention.
【図２】同ＭＩ素子本体をプリント基板に固定してなる
ＭＩ素子のサンプルを示す斜視図である。FIG. 2 is a perspective view showing a sample of an MI device in which the same MI device body is fixed to a printed circuit board.
【図３】同ＭＩ素子のサンプルの外部磁界による出力特
性の測定の様子を示す説明図である。FIG. 3 is an explanatory diagram showing how an output characteristic of a sample of the MI device is measured by an external magnetic field.
【図４】ＭＩ素子の外部磁界に対する両端間電圧の変化
を示すグラフ図である。FIG. 4 is a graph showing a change in voltage between both ends of an MI element with respect to an external magnetic field.
【図５】異なる組成の磁性薄膜から構成したＭＩ素子の
それぞれとＭＲ素子の外部磁界に対する電圧変化の特性
を示すグラフ図である。FIG. 5 is a graph showing characteristics of a voltage change with respect to an external magnetic field of each of an MI element and an MR element composed of magnetic thin films having different compositions.
１ 磁性薄膜 ２ セラミックス基板 ３ プリント基板 ４ 半田 ５ ヘルムホルツコイル ６ ＭＩ素子のサンプル ７ 駆動電流源 REFERENCE SIGNS LIST 1 magnetic thin film 2 ceramic substrate 3 printed circuit board 4 solder 5 Helmholtz coil 6 sample of MI element 7 drive current source
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 43/00 G01R 33/06 H01F 10/14 G11B 5/37 ＪＩＣＳＴファイル（ＪＯＩＳ)──────────────────────────────────────────────────続 き Continued on the front page (58) Fields surveyed (Int. Cl. 7 , DB name) H01L 43/00 G01R 33/06 H01F 10/14 G11B 5/37 JICST file (JOIS)
Claims (3)
検出素子において、 ａ，ｂ，ｃ，ｄ，ｅ，ｆは原子％の組成比の値を示し、
ＭIは元素のＺｒ，Ｈｆ，Ｎｂ，Ｔａ，Ｍｏ，Ｗのうち
少なくとも一種類、ＭIIは元素のＡｇ，Ｃｕのうち少な
くとも一方であるとして、組成が Ｆｅa Ａｌb ＭIc ＭIId Ｃe Ｏf の組成式で表され、前記ａ，ｂ，ｃ，ｄ，ｅ，ｆのそれ
ぞれの値は、 ａ＋ｂ＋ｃ＋ｄ＋ｅ＋ｆ＝１００ ０．５≦ｂ≦２０ ２≦ｃ≦２５ ０．０５≦ｄ≦５ ０．５≦ｅ≦２５ ０．２≦ｆ≦６ である磁性薄膜から構成され、該磁性薄膜は検出対象の
外部磁界が印加される方向に対して膜面内で直交する方
向が磁化容易軸方向となるように誘導異方性がつけられ
ていることを特徴とする磁気検出素子。In a magnetic sensing element utilizing a magneto-impedance effect, a, b, c, d, e, and f indicate values of a composition ratio of atomic%,
It is assumed that MI is at least one of the elements Zr, Hf, Nb, Ta, Mo, and W, and MII is at least one of the elements Ag and Cu, and the composition is represented by a composition formula of Fea Alb MIc MIId Ce Of. , A, b, c, d, e, and f are as follows: a + b + c + d + e + f = 100 0.5 ≦ b ≦ 20 2 ≦ c ≦ 25 0.05 ≦ d ≦ 5 0.5 ≦ e ≦ 250. 2 ≦ f ≦ 6, and the magnetic thin film is a detection target.
The direction perpendicular to the direction in which the external magnetic field is applied in the film plane
Induced anisotropy is applied so that the direction is the easy axis direction.
Magnetic sensor, characterized by that.
検出素子において、 ａ，ｂ，ｃ，ｄ，ｅ，ｆ，ｇは原子％の組成比の値を示
し、ＭIは元素のＺｒ，Ｈｆ，Ｎｂ，Ｔａ，Ｍｏ，Ｗの
うち少なくとも一種類、ＭIIは元素のＡｇ，Ｃｕのうち
少なくとも一方、Ｌは希土類元素の少なくとも１種類で
あるとして、組成が Ｆｅa Ａｌb ＭIc ＭIId Ｃe Ｏf Ｌg の組成式で表され、前記ａ，ｂ，ｃ，ｄ，ｅ，ｆ，ｇの
それぞれの値は、 ａ＋ｂ＋ｃ＋ｄ＋ｅ＋ｆ＋ｇ＝１００ ０．５≦ｂ≦２０ ２≦ｃ≦２５ ０．０５≦ｄ≦５ ０．５≦ｅ≦２５ ０．２≦ｆ≦６ ０．１≦ｇ≦５ である磁性薄膜から構成され、該磁性薄膜は検出対象の
外部磁界が印加される方向に対して膜面内で直交する方
向が磁化容易軸方向となるように誘導異方性がつけられ
ていることを特徴とする磁気検出素子。2. In a magnetic sensing element utilizing the magneto-impedance effect, a, b, c, d, e, f, and g indicate values of a composition ratio of atomic%, and MI indicates elements Zr, Hf, Nb, and Assuming that at least one of Ta, Mo, and W, MII is at least one of the elements Ag and Cu, and L is at least one of the rare earth elements, the composition is represented by a composition formula of Fea Alb Mic MIId Ce Of Lg. The respective values of a, b, c, d, e, f and g are as follows: a + b + c + d + e + f + g = 100 0.5 ≦ b ≦ 20 2 ≦ c ≦ 25 0.05 ≦ d ≦ 5 0.5 ≦ e ≦ 25 0.2 ≦ f ≦ 6 0.1 ≦ g ≦ 5, and the magnetic thin film is a detection target.
The direction perpendicular to the direction in which the external magnetic field is applied in the film plane
Induced anisotropy is applied so that the direction is the easy axis direction.
Magnetic sensor, characterized by that.
Oeの範囲であることを特徴とする請求項１または２に記
載の磁気検出素子。3. The method according to claim 1, wherein the magnitude Hk of the anisotropy is 0.5 Oe to 5 Oe.
The magnetic sensing element according to claim 1 , wherein the range is Oe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP08655395A JP3218272B2 (en) | 1995-04-12 | 1995-04-12 | Magnetic sensing element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP08655395A JP3218272B2 (en) | 1995-04-12 | 1995-04-12 | Magnetic sensing element |
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| Publication Number | Publication Date |
|---|---|
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| JP3218272B2 true JP3218272B2 (en) | 2001-10-15 |
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| EP0899798A3 (en) | 1997-08-28 | 2000-01-12 | Alps Electric Co., Ltd. | Magneto-impedance element, and magnetic head, thin film magnetic head, azimuth sensor and autocanceler using the same |
| JP4512709B2 (en) * | 2002-07-03 | 2010-07-28 | 独立行政法人科学技術振興機構 | Magnetic field detection element |
| JP5201885B2 (en) * | 2007-06-19 | 2013-06-05 | キヤノン株式会社 | Magnetic substance detection apparatus and detection method |
-
1995
- 1995-04-12 JP JP08655395A patent/JP3218272B2/en not_active Expired - Lifetime
Non-Patent Citations (1)
| Title |
|---|
| Ｊ．Ａｐｐｌ．Ｐｈｙｓ．，Ｖｏｌ．７６，Ｎｏ．１０（１９９４），ｐｐ．６１９８−６２０３ |
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