JP3216482B2 - High frequency circuit device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-frequency circuit device, and more particularly, to a high-frequency circuit device using electronic components generating a large amount of heat.

[0002]

2. Description of the Related Art FIG. 17 shows a structure of a conventional high-frequency circuit device. In the drawing, reference numeral 1 denotes a dielectric substrate having a matching circuit and a bias circuit on the front surface and a grounding conductor on the back surface; A metal carrier 3 for fixing the dielectric substrate 1 via a grounding conductor is a lead for connecting the high-frequency circuit device to an external circuit.

FIG. 18 is a detailed view of an amplifier on the surface of the high-frequency circuit device. In FIG. 18, reference numeral 4 denotes a microstrip line on the dielectric substrate 1, reference numeral 5 denotes a surface-mounted electronic component which generates a large amount of heat, and reference numeral 6 denotes a component. It is a conductive wire that connects the microstrip line 4 and the surface-mounted electronic component 5.
FIG. 19 is a sectional view of FIG.

In FIG. 17, a matching circuit, a bias circuit, and the like are provided on the surface of a dielectric substrate 1 so that an amplifier unit amplifies a high-frequency signal. The metal carrier 2 includes a grounding conductor on the back surface of the dielectric substrate 1,
It is adhered by solder or a conductive adhesive. The metal carrier 2 is fixed to an external ground conductor portion by a conductive screw, solder, or a conductive adhesive depending on the application. As a result, a ground plane potential is supplied to the ground conductor on the back surface of the dielectric substrate 1.

In the amplifier section, as shown in FIG.
A surface-mounted electronic component 5 is bonded to the metal carrier 2 by soldering or a conductive adhesive through a hole formed in the dielectric substrate 1. Is the microstrip line 4 of
They are connected by conductive wires 6.

[0006]

The conventional high-frequency circuit device is configured as described above, and the dielectric substrate 1 and the metal carrier 2 are adhered by solder or a conductive adhesive. Especially when bonding by soldering, the dielectric substrate 1
And the metal carrier 2 is in a high temperature state of 100 ° C. or more. If the coefficient of thermal expansion between the dielectric substrate 1 and the metal carrier 2 is too large, the dielectric substrate 1 is damaged. There is a possibility that it will.

For this reason, the material of the metal carrier 2 must be selected from materials having a coefficient of thermal expansion close to that of the dielectric substrate 1. In this case, a material having a low thermal conductivity may be inevitably selected. However, in this case, as the diffusion of heat generated in the surface-mounted electronic component 5 during operation of the high-frequency circuit device, the lateral direction is as shown by AR1 in FIG. 20, and the downward direction is as shown by AR2 in FIG. Also stays in a narrow range.

[0008] In FIG. 20 and FIG.
AR2 is an area where the heat generated by the electronic component diffuses laterally on the metal carrier 2 per unit time t. AR2 denotes an area where the heat generated by the electronic component diffuses downward on the metal carrier 2 per unit time t. It is an area to do. As a result, heat is stored in the surface-mounted electronic component 5, which may adversely affect the operation of the surface-mounted electronic component 5.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problems, and it is possible to prevent a heat from being stored in an electronic component during operation and to operate the electronic component in a stable state. It is an object to provide a circuit device.

[0010]

A high-frequency circuit device according to the present invention is bonded to a dielectric substrate having a microstrip line on the front surface, a grounding conductor on the back surface, and an external grounding conductor.
Fixed and supplies ground plane potential to the ground conductor on the dielectric substrate
And, a metal carrier for fixing the dielectric substrate through the ground conductor, disposed in the opening of the dielectric substrate, microstrip
Lip line and electrically connected to the electronic component is adhered was charged between the dielectric substrate and the metal carrying an electronic component
Is mounted, and the heat generated by the electronic components spreads.
Using a material with a high thermal conductivity to disperse , gold formed sufficiently thin compared to the dielectric substrate and metal carrier
And a genus plate .

Further, the high-frequency circuit device according to the present invention comprises:
If the thickness of the electronic component is thinner than the dielectric substrate, the thermal conductivity
Formed of a material with a large size and provided on a metal plate
An electronic component mounted on a pedestal is provided.

Further, a high-frequency circuit device according to the present invention
Electronic components and microstrip lines on the surface
Having a small-sized dielectric substrate formed, and a small
Microstrip line of dielectric substrate and dielectric substrate
To electrically connect microstrip lines on a plate
With a metal pedestal forming a smaller amplifier section
is there.

[0013]

A metal plate having a high thermal conductivity and a sufficiently small thickness compared to a dielectric substrate or a metal carrier is inserted between the dielectric substrate and the metal carrier. By mounting the components, the heat generated by the electronic components during operation spreads widely and rapidly along the inserted metal plate. Thus, it is possible to prevent the heat from being trapped in the electronic component and to operate the electronic component in a stable state.

[0014]

Embodiments of the present invention will be described below in detail with reference to the drawings.

Embodiment 1 FIG. FIG. 1 in which parts corresponding to those in FIG. 17 are denoted by the same reference numerals shows a high-frequency circuit device according to a first embodiment of the present invention as a whole. In the case of the first embodiment, a metal plate 10 having a high thermal conductivity and a thickness sufficiently smaller than that of the dielectric substrate 1 or the metal carrier 2 is provided between the dielectric substrate 1 and the metal carrier 2. 17 and the surface mount type electronic component 5 is mounted thereon, which is different from the conventional one shown in FIG. FIG. 2 in which the same reference numerals are given to the parts corresponding to FIG.
FIG. 3 shows details around the amplifier section when the metal plate 10 is inserted, and FIG.
Shows a cross section of FIG.

Next, the operation will be described. The diffusion of heat generated in the surface-mounted electronic component 5 during the operation of the high-frequency circuit device is the same as in the conventional case because the thickness of the metal plate 10 in the downward direction is sufficiently smaller than that of the dielectric substrate 1 or the metal carrier 2. Although there is not much difference from the case of (1), in the case of the horizontal direction, since the thermal conductivity of the metal plate 10 is large, as shown by AR10 in FIG. AR
Reference numeral 10 denotes a state in which the heat generated in the electronic component is changed to the metal plate 10 per unit time t.
Is an area that spreads in the horizontal direction.

As a result, heat does not remain in the surface-mounted electronic component 5, and the surface-mounted electronic component 5 can continue to operate in a stable state. The metal plate 10 has a sufficiently small thickness compared to the dielectric substrate 1 and the metal carrier 2, so that the coefficient of thermal expansion of the metal plate 10 is smaller than that of the dielectric substrate 1 and the metal carrier 2. Even if there is a difference, there is almost no effect, and the dielectric substrate 1 is not damaged during bonding.

Embodiment 2 FIG. In the first embodiment, the case where the surface-mounted electronic component is directly bonded to the metal carrier has been described. However, when the height of the surface-mounted electronic component is low, the surface-mounted electronic component is adjusted for height adjustment. A metal pedestal having high thermal conductivity may be provided below. The present invention is also effective in this case. FIG. 5 in which the same reference numerals as in FIG.
Shown in The second embodiment differs from the first embodiment in that a surface mount electronic component 12 having a low height and a metal pedestal 13 having a high thermal conductivity are provided. FIG. 6 shows a cross section of the second embodiment.

In this case, the heat generated in the surface-mounted electronic component 12 during the operation of the high-frequency circuit device is quickly transferred to the metal plate 10 without being trapped in the metal pedestal 13 because the thermal conductivity of the metal pedestal 13 is large. Convey.

As described in the first embodiment, the heat diffusion in this case is, as described in the first embodiment, because the thickness of the metal plate 10 is sufficiently thinner than that of the dielectric substrate 1 or the metal carrier 2. Although there is not much difference from the case of (1), in the case of the horizontal direction, since the thermal conductivity of the metal plate 10 is large, as shown by AR11 in FIG. AR11 indicates that the heat generated by the electronic component is equal to the unit time t.
This is an area diffused in the horizontal direction of the metal plate 10.

As a result, heat does not remain in the surface-mounted electronic component 12, and the surface-mounted electronic component 12 can continue to operate in a stable state.

Embodiment 3 FIG. In the first and second embodiments, the case where the surface-mounted electronic component is used has been described. However, the present invention is also effective when a packaged electronic component with leads is used. FIG. 8 in which the same reference numerals are given to portions corresponding to FIG.
Shown in The third embodiment is different from the first embodiment in that a package type electronic component 16 with leads is provided and the conductive wire 6 is not provided. FIG. 9 shows a cross section of the third embodiment.

In this case, the diffusion of heat generated in the packaged electronic component 16 with leads during the operation of the high-frequency circuit device is as follows.
As described in the first embodiment, in the case of the downward direction, the metal plate 1
10 is sufficiently smaller than the thickness of the dielectric substrate 1 and the metal carrier 2, so that there is not much difference from the conventional case. As shown by AR12 in FIG. AR12 is an area where the heat generated in the electronic component diffuses in the lateral direction of the metal plate 10 per unit time t.

As a result, heat does not stay in the packaged electronic component 16 with leads, and the packaged electronic component 16 with leads can continue to operate in a stable state.

Embodiment 4 FIG. In the third embodiment, the case where a packaged electronic component with leads is used has been described. However, the present invention is also effective when a packaged electronic component with screws is used. This is shown in FIG. 11 in which the same reference numerals are given to portions corresponding to those in FIG. In the fourth embodiment, a packaged electronic component 19 with a screw-type lead and a mounting screw 20
This is different from the third embodiment in that FIG. 12 shows a cross section of the fourth embodiment.

In this case, when the high-frequency circuit device operates, the diffusion of the heat generated in the screw-type lead-type packaged electronic component 19 is, as described above in the first embodiment, when the metal plate 10 is in the downward direction. Since the thickness is sufficiently smaller than that of the dielectric substrate 1 or the metal carrier 2, there is not much difference from the conventional case. As shown in FIG. 6, the metal diffuses widely and rapidly along the metal plate 10. AR13 is an area where heat generated in the electronic component diffuses in the lateral direction of the metal plate 10 per unit time t.

As a result, heat does not stay in the screw-type lead-type package electronic component 19, and the screw-type lead-type package electronic component 1 in a stable state is prevented.
9 can continue to operate. Further, since the metal plate 10 is thin, it is easy to form a screw hole.

Embodiment 5 FIG. In the second embodiment, the case where the low-height surface-mounted electronic component is placed on the metal pedestal has been described. However, the low-height surface-mount electronic component and the metal pedestal, and the small dielectric substrate and the like are used. The present invention is also effective when a small amplifying section is formed by using the small amplifying section and bonded to a metal carrier.

This is shown in FIG. 14 as a fifth embodiment. A small amplifier section is composed of the surface mount electronic component 12 having a low height, a metal pedestal 23 which is larger than the metal pedestal 13, and a small dielectric substrate 24, which is adhered to the metal plate 10. I have. The surface mounted electronic component 12, the microstrip line 26 on the small dielectric substrate 24, and the microstrip line 4 on the dielectric substrate 1 are connected to a conductive ribbon 25.
Connected by

Also in this case, as described in the second embodiment, the heat generated in the surface-mounted electronic component 12 during the operation of the high-frequency circuit device is transferred to the metal pedestal 23 because the thermal conductivity of the metal pedestal 23 is large. It does not stay inside and is transmitted to the metal plate 10, and when the diffusion of heat is downward, the thickness of the metal plate 10 is sufficiently thinner than the dielectric substrate 1 and the metal carrier 2, so that there is not much difference from the conventional case. However, in the case of the horizontal direction, since the thermal conductivity of the metal plate 10 is large, as indicated by AR14 in FIG.
It diffuses widely and rapidly along the metal plate 10. AR14 is an area where heat generated in the electronic component diffuses in the horizontal direction of the metal plate 10 per unit time t.

As a result, heat does not remain in the surface-mounted electronic component 12, and the surface-mounted electronic component 12 can continue to operate in a stable state. In the first to fifth embodiments described above, the case where an amplifier is used as an electronic component has been described. However, the present invention is not limited to this.
In short, any electronic component that generates high heat during operation can achieve the same effect as the above-described embodiment.

[0032]

As described above, according to the present invention, a metal having a high thermal conductivity and a thickness sufficiently smaller than that of a dielectric substrate or a metal carrier is provided between the dielectric substrate and the metal carrier. By inserting the plate and mounting the electronic component that generates a large amount of heat thereon, the heat generated by the electronic component during operation spreads widely and rapidly along the inserted metal plate. Thus, it is possible to realize a high-frequency circuit device capable of preventing the accumulation of heat in the electronic components and operating in a stable state.

[Brief description of the drawings]

FIG. 1 is a schematic diagram illustrating a structure of a high-frequency circuit device according to a first embodiment of the present invention.

FIG. 2 is a plan view showing a detailed configuration around an amplifier on the surface of the high-frequency circuit device according to Embodiment 1 of the present invention.

FIG. 3 is a sectional view of FIG. 2;

FIG. 4 is a schematic diagram illustrating a state in which heat generated in the electronic component according to the first embodiment is diffused in a lateral direction.

FIG. 5 is a plan view showing a detailed configuration around an amplifier on the surface of a high-frequency circuit device according to Embodiment 2 of the present invention.

FIG. 6 is a sectional view of FIG.

FIG. 7 is a schematic diagram illustrating a state in which heat generated in an electronic component according to the second embodiment is diffused in a lateral direction.

FIG. 8 is a plan view showing a detailed configuration around an amplifier on the surface of a high-frequency circuit device according to Embodiment 3 of the present invention.

FIG. 9 is a sectional view of FIG.

FIG. 10 is a schematic diagram illustrating how heat generated in an electronic component according to a third embodiment is diffused in a lateral direction.

FIG. 11 is a plan view showing a detailed configuration around an amplifier on the surface of a high-frequency circuit device according to Embodiment 4 of the present invention.

FIG. 12 is a sectional view of FIG.

FIG. 13 is a schematic diagram illustrating how heat generated in an electronic component according to a fourth embodiment is diffused in a lateral direction.

FIG. 14 is a plan view showing a detailed configuration around an amplifier on the surface of a high-frequency circuit device according to Embodiment 5 of the present invention.

FIG. 15 is a sectional view of FIG.

FIG. 16 is a schematic diagram illustrating how heat generated in an electronic component according to a fifth embodiment is diffused in a lateral direction.

FIG. 17 is a schematic diagram illustrating the structure of a conventional high-frequency circuit device.

FIG. 18 is a plan view showing a detailed configuration around an amplifier section on the surface of a conventional high-frequency circuit device.

FIG. 19 is a sectional view of FIG. 18;

FIG. 20 is a schematic diagram showing how heat generated by electronic components in a conventional high-frequency circuit device diffuses in a horizontal direction.

FIG. 21 is a diagram illustrating downward diffusion of heat generated in an electronic component in a conventional high-frequency circuit device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Dielectric board 2 Metal carrier 3 Lead 4 Microstrip line 5 Surface mount type electronic component 6 Conductive wire 10 Metal plate 12 Surface mount type electronic component 13 Metal pedestal 16 Package type electronic component with lead 19 Screw type lead Packaged electronic component 20 Screw 23 Metal pedestal 24 Small dielectric substrate 25 Conductive ribbon 26 Microstrip line

──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. ⁷ , DB name) H05K 1/18 H01L 23/36 H05K 1/02

Claims (3)

(57) [Claims] 1. A microstrip line and an open circuit on a surface.
A dielectric substrate having a grounding conductor disposed on its mouth and back surface is bonded and fixed to an external grounding conductor to form a connection between the dielectric substrate and the dielectric substrate.
Supplying a ground plane potential to the ground conductor, a metal carrier for fixing the dielectric substrate through the upper Symbol grounding conductor, arranged in the opening of the dielectric substrate, the microstrip
An electronic component electrically connected to the tap line, and inserted and bonded between the dielectric substrate and the metal carrier, wherein the electronic component is mounted,
High thermal conductivity so that the heat generated by electronic components is diffused
A high-frequency circuit device comprising: a dielectric material ; and a metal plate formed sufficiently thinner than the metal carrier by using a suitable material. 2. The electronic component has a thickness greater than that of the dielectric substrate.
If it is too thin, it is formed of a material with high thermal conductivity,
It is mounted on a metal pedestal provided on a plate
The high-frequency circuit device according to claim 1, wherein 3. The metal pedestal has electronic components and a surface on its surface.
Dielectric substrate with microstrip line and microstrip line
Board, and a micros
Trip lines and microstrips on dielectric substrates
Small amplification formed by electrically connecting lines
The high-frequency device according to claim 2, wherein the high-frequency device has a cavity.
Circuit device.