JP3215477B2 - Semiconductor distributed feedback laser device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor distributed feedback laser device used as an electro-optical converter. INDUSTRIAL APPLICABILITY The present invention is suitable for use as a light source for long-distance large-capacity optical communication devices, optical information processing devices, optical recording devices, optical applied measurement devices, and other optoelectronic devices.

[0002]

2. Description of the Related Art In general, a semiconductor distributed feedback laser device in which stimulated emission light is generated by applying distributed feedback of light to an active layer by a diffraction grating provided in the vicinity of the active layer has a relatively simple structure and excellent oscillation. Since stimulated emission light with spectral characteristics can be obtained, many research and development have been promoted,
Its usefulness is expected as a suitable light source device used for long-distance large-capacity optical communication, optical information processing and recording, optical applied measurement, and the like.

[0003] Such a semiconductor distributed feedback laser device employs an optical waveguide structure in which an active layer is surrounded by a transparent heterojunction semiconductor layer or the like to efficiently generate stimulated emission light. In particular, by forming a diffraction grating having a triangular cross section, for example, at the interface of the transparent waveguide layer, which is very close to the active layer and far from the active layer, and periodically changing the refractive index of the waveguide, the light distribution is improved. R & D to return home is being conducted exclusively.

However, in such light distribution feedback by refractive index coupling, an appropriate feedback of the optical phase is performed with respect to the Bragg wavelength light reflected in accordance with the period of the thickness change of the optical waveguide layer. I can't. Therefore, stable laser oscillation cannot be obtained, and there is a high possibility that longitudinal mode oscillations of two wavelengths vertically and symmetrically separated from the Bragg wavelength are simultaneously generated. In addition, even when only one of the two longitudinal modes of the longitudinal mode oscillation occurs, it is difficult to select in advance which of the two wavelengths the longitudinal mode oscillation should be performed. In addition, the accuracy of setting the oscillation wavelength is significantly impaired.

That is, in the light distribution feedback utilizing the refractive index coupling based on the periodic perturbation of the refractive index in the optical waveguide layer, a problem of the degeneration of the two-wavelength longitudinal mode occurs in principle. It is difficult.

Of course, various means for solving such difficulties have been conventionally studied. However, in any case, for example, a structure in which the phase is shifted by a quarter wavelength at substantially the center of the diffraction grating, the structure of the laser device is complicated, and it is necessary to add a manufacturing process only for eliminating degeneracy. Above, it was necessary to form an antireflection film on the end face of the laser element.

On the other hand, when the light distribution feedback is performed by the refractive index coupling as described above, an oscillation stop band is generated in the Bragg wavelength region. However, when the light distribution feedback is performed by the gain coupling based on the periodic perturbation of the gain coefficient, the oscillation is stopped. Kogelnick et al., "Coupled Wave Theory of Distributed Feedback Lasers", Journal of Applied Physics, 1972, Vol. 43, pp. 2327-233
Page 5 ("Coupled-Wave Theory of Distributed Feedback
Lasers ", Journal of AppliedPhysics, 1972 Vol.43, p
p.2327-2335). This paper is only a result of a fundamental study, and no specific structure is shown.

The present inventors have invented a new semiconductor laser device to which the above basic theory of Kogelnik et al. Is applied, and applied for several patents. These inventions are roughly classified into those that periodically change the gain of the active layer and those that use an absorptive diffraction grating. Examples of the latter are: (1) Japanese Patent Application No. 63-189593, July 30, 1988
Patent application title: Structure of providing a semiconductor opaque layer near an active layer and forming a diffraction grating on the opaque layer to provide distributed feedback based on periodic perturbation to a gain coefficient or a loss coefficient of the opaque layer and a method of manufacturing the same . (2) Japanese Patent Application No. 2-282698, filed on Oct. 19, 1990 A light absorbing layer is provided on each top of a concave and convex shape corresponding to the period of a diffraction grating, and an active layer is grown thereon via a buffer layer. This structure combines the periodic distribution of gain and the periodic distribution of light absorption. and so on.

[0009]

However, in the structures shown in these applications, there is a possibility that a saturated state occurs in the absorption layer, causing a non-linear operation of the laser.

An object of the present invention is to solve this problem and to provide a semiconductor distributed feedback laser device having a new structure that operates substantially linearly with respect to an injection current.

[0011]

According to the present invention, there is provided a semiconductor distributed feedback laser device having a composition which absorbs stimulated emission light generated by an active layer periodically along a laser optical axis parallel to the active layer. The semiconductor device includes a formed absorption layer, and the absorption layer is a layer to which an impurity element (hereinafter, referred to as “carrier killer”) for shortening a carrier lifetime is added.

Specifically, two semiconductor layers having mutually different conductivity are provided with an active layer interposed therebetween, and at least one of the two semiconductor layers is embedded with a carrier killer-doped diffraction grating. As a carrier killer, for example, S
i, Cd, Zn, or the like is used. The addition amount is 10 ¹⁸
It is preferably about 10 to 10 ¹⁹ cm ^-3 .

As one method for obtaining such a structure, a semiconductor layer doped with a carrier killer having substantially the same composition as the active layer is provided on the active layer with a barrier layer interposed therebetween. The diffraction grating is formed by etching the semiconductor layer.

As another method, a buffer layer is grown on a semiconductor layer on which an irregular shape corresponding to the period of the diffraction grating is imprinted so that a periodic shape corresponding to the irregular shape remains on the upper surface. When the active layer is grown so that a change in thickness corresponding to the periodic shape of the upper surface thereof occurs, a semiconductor layer having an absorption property doped with a carrier killer is provided on each top of the uneven shape of the semiconductor layer. May be provided. That is, the diffraction grating is formed in a periodic uneven shape along the laser optical axis direction, a semiconductor layer having an absorbing composition is arranged on the top of the uneven shape, and the thickness of the active layer corresponds to the uneven shape. Is provided with a periodic change.
The buffer layer in this case is for preventing various types of crystal defects introduced into the substrate and the epitaxial growth layer during the engraving of the diffraction grating from propagating to the active layer.

It is desirable to provide a refractive index distribution canceling structure in the vicinity of the diffraction grating for canceling the periodic distribution of the refractive index by the diffraction grating. Separately from this, when a periodic change is provided in the thickness of the active layer corresponding to the unevenness of the diffraction grating, the periodic distribution of the refractive index due to the diffraction grating is different from the refractive index due to the thickness distribution of the active layer. It is desirable to select the materials and shapes of the diffraction grating and the active layer so as to offset the periodic distribution.

In this specification, "up" means the direction of crystal growth during manufacturing, that is, the direction away from the substrate.

[0017]

An absorption layer doped with a carrier killer is provided periodically above or below an active layer for generating stimulated emission light. As a result, (1) the gain coefficient with respect to the light wave propagating in the resonator axis direction changes at a period coinciding with the period of the diffraction grating, distributed feedback by gain coupling is realized, and (2) the lifetime of carriers generated by absorption is reduced. Due to the shortening, the nonlinear operation of the laser can be suppressed, and the advantage of gain coupling can be exhibited even at high output.

Further, in the case of a GaAs / AlGaAs laser device, that is, a device having a structure lattice-matched to GaAs, the diffraction grating can be formed of a material having a small Al composition, and the quality of the crystal regrown thereon can be reduced. Enhanced.

[0019]

FIG. 1 is a perspective view showing the structure of a semiconductor distributed feedback laser device according to a first embodiment of the present invention.

In this embodiment, a periodic absorption structure is provided on an active layer, and a buffer layer 2, a cladding layer 3, an active layer 4 and a barrier layer 5 are formed epitaxially on a substrate 1. A diffraction grating 7 is provided on the barrier layer 5. On the diffraction grating 7, a cladding layer 8 and a contact layer 9 are further formed epitaxially. The contact layer 9 is connected to the electrode layer 11 through a window opened in the insulating layer 10.
Connected to. An electrode layer 12 is provided on the back surface of the substrate 1.

The diffraction grating 7 is formed by periodically arranging an absorbing layer 6 having a composition absorbing the stimulated emission light generated by the active layer 4 along a laser optical axis parallel to the active layer 4. That is, along the laser optical axis direction, the absorption coefficient is
It changes in the cycle of.

The feature of this embodiment is that the absorption layer 6 constituting the diffraction grating 7 is a layer to which an impurity element (carrier killer) for shortening the carrier lifetime is added.

In order to manufacture this laser device, each layer of a semiconductor laser element having a double hetero junction structure is successively epitaxially grown on the substrate 1 in two stages. That is, a buffer layer 2, a cladding layer 3, an active layer 4, a barrier layer 5, and an absorption layer 6 doped with a carrier killer are epitaxially grown on the substrate 1 in this order. As the carrier killer, for example, Si, Cd, Zn, or the like is used. The addition amount is preferably about 10 ¹⁸ to 10 ¹⁹ cm ⁻³ . Subsequently, the diffraction grating 7 is imprinted on the absorption layer 6 which is the uppermost layer of the growth layer by applying the interference exposure method and the dry etching capable of selective etching. At this time, it is desirable that the absorption layer 6 be completely removed in the etched portion. Subsequently, the upper cladding layer 8 and the contact layer 9 are epitaxially grown in this order on the absorption layer 6 on which the diffraction grating 7 is imprinted, thereby completing the double hetero junction structure. Thereafter, the insulating layer 10 is deposited on the upper surface of the contact layer 9 to form a stripe-shaped window, and then the negative electrode layer 11 is deposited on the entire surface. On the back surface of the substrate 1, a positive electrode layer 12 is deposited. Finally, the semiconductor block manufactured in this way is cleaved to complete individual semiconductor laser devices.

Examples of the conductivity type, composition, and thickness of each layer are shown below. Substrate 1 p ⁺ -GaAs buffer layer 2 p ⁺ -GaAs, thickness 0.5 μm cladding layer 3 p-AlGaAs, thickness 1 μm Active layer 4 GRIN-SCH-SQW barrier layer 5 n-Al _0.45 Ga _0.55 As, thickness 0.1 μm Carrier killer doped absorption layer 6 Al _0.03 Ga _0.97 As, thickness 0.1 μm Diffraction grating 7 period 260 nm Cladding layer 8 n-Al _0.45 Ga _0.55 As, thickness 1 μm Contact layer 9 n ⁺ -GaAs, thickness 0.5 μm Insulating layer 10 SiO ₂ (width of stripe-shaped window about 10 μm) Electrode layer 11 Au / Au-Ge Electrode layer 12 Au / Cr

In this embodiment, the case where a single quantum well is used as the active layer 4 has been described, but a multiple quantum well or a bulk crystal may be used. In the structure of this embodiment, the active layer 4 is flat, and the advantages can be effectively used by using a single quantum well or a multiple quantum well. Further, the present invention can be implemented even if the conductivity types of all the semiconductor layers including the substrate 1 are reversed. Although not shown here, it is desirable that the cladding layer 8 be provided with a refractive index distribution canceling structure for canceling the periodic distribution of the refractive index by the diffraction grating 7. Such a structure is disclosed in Japanese Patent Application No. Hei.
As shown in FIG. 09, a structure in which layers having different refractive indices are combined can be used.

FIG. 2 is a diagram for explaining the saturation of light absorption.
3 shows a band structure of an absorption layer.

The band gap of the absorption layer is set to be almost the same as that of the active layer. As shown in FIG. 2A, the band gap of the absorption layer absorbs photons emitted from the active layer and the carrier (electron-hole pair).
Generate Although the number of possible states of the carrier is limited, the carrier disappears by recombination, so that a new photon can be absorbed. However, when the lifetime of the carrier is long, as shown in FIG. 2B, there is almost no recombination and only absorption occurs. In this state, if a large amount of photons enter the absorption layer in comparison with the rate at which carriers disappear, there will be no vacancies in the state that the carriers can take, and the absorption will be saturated without being able to absorb any more photons. .

Further, with the saturation of the light absorption, as shown in FIG. 3, a hysteresis occurs in the injection current vs. light output characteristics.

In order to prevent such saturation of light absorption and the resulting hysteresis in injection current versus light output characteristics, in the present invention, the absorption layer is doped with a carrier killer to promote non-radiative recombination of carriers. As a result, gain coupling up to a high output can be obtained without saturating the absorption, and the problem of hysteresis can be greatly reduced. That is, the laser device can be operated linearly.

FIG. 4 is a perspective view showing the structure of a semiconductor distributed feedback laser device according to a second embodiment of the present invention.

This embodiment combines a periodic carrier killer absorption structure with a periodic change in the thickness of an active layer. A buffer layer 22 and a cladding layer 2
3. The pattern supply layers 33 and 34 are formed epitaxially, and the pattern supply layers 33 and 34 have a diffraction grating with a concave and convex shape such that the bottom of the groove reaches the pattern supply layer 33, that is, the pattern supply layer 34 is cut. Is formed in a cycle of On this uneven shape, a buffer layer 25 is formed leaving a periodic shape corresponding to the uneven shape on the upper surface,
An active layer 24 having a thickness change corresponding to the periodic shape of the upper surface of the buffer layer 25 is formed thereon. Active layer 24
On top of this, a cladding layer 28 and a contact layer 29 are formed epitaxially. The contact layer 29 is connected to the electrode layer 31 through a window opened in the insulating layer 30. The electrode layer 32 is provided on the back surface of the substrate 21.

The feature of the present embodiment is that the pattern supply layer 34 is formed of an absorption layer doped with a carrier killer. That is, the pattern supply layer 34 is doped with a carrier killer, and the composition of the pattern supply layer 34 is set so as to absorb the stimulated emission light from the active layer 24. Further, the pattern supply layer 33 is formed such that the periodic distribution of the refractive index by the diffraction grating formed by etching the pattern supply layer 34 is offset by the periodic distribution of the refractive index by the thickness distribution of the active layer 24.
The composition and shape of the active layer 34, the active layer 24, and the buffer layer 25 are selected.

In the above embodiment, the case where the present invention is implemented with a GaAs system has been described. However, the present invention can be similarly implemented with other material systems such as an InP system. When the structure of the first embodiment is implemented by an InP system, the conductivity type, composition,
Examples of the thickness are shown below. Substrate 1 (100) n-InP buffer layer 2, cladding layer 3 n-InP, 0.5 μm thick Active layer 4 Multiple quantum well structure of InGaAs and InGaAsP (λ _g = 1.3 μm) (equivalent λ _g = 1.55 μm) Barrier layer 5 p-InP, thickness 0.1 μm Absorption layer 6 doped with carrier killer 6 InGaAsP (λ _g = 1.55 μm), thickness 0.1 μm Cladding layer 8 p-InP, thickness 1 μm Contact layer 9 p ⁺ -InGaAs, thickness 0.5 μm However, InGaAs and InGaAsP are lattice-matched to InP. λ _g represents the wavelength of light that corresponds to the forbidden band width.

In the case of the InP system, the present invention can be implemented by changing the conductivity types of all the semiconductor layers including the substrate. Also, a bulk mixed crystal can be used for the active layer.

[0035]

The semiconductor distributed feedback laser device utilizing the optical distributed feedback by gain coupling differs from the conventional refractive index coupled semiconductor distributed feedback laser device in that the longitudinal mode oscillation of a single wavelength is completely performed. It is considered that there is no uncertainty of the oscillation wavelength as in the conventional device. However,
The conventional semiconductor distributed feedback laser device can achieve a completely single longitudinal mode, but in all cases, the configuration of the semiconductor laser device is complicated, and furthermore, it is necessary to form an antireflection film on the end face of the laser element. In contrast to the increase in the number of steps, the apparatus of the present invention can easily realize the complete single longitudinal mode without changing the conventional manufacturing steps and without the need for antireflection measures. Also, when the light distribution feedback is achieved by gain coupling, even if interference noise induced by reflected return light from the near end or the far end occurs, it becomes much smaller than that of the conventional refractive index coupling. It is expected.

In particular, the semiconductor distributed feedback laser device of the present invention can significantly suppress nonlinear operation because the periodic light absorbing layer is doped with a carrier killer, and exhibits the advantage of gain coupling even at high output. it can.

In the case of the GaAs / AlGaAs system, the aluminum composition at the regrowth interface can be reduced, and the crystal quality can be improved.

Therefore, the semiconductor distributed feedback laser device of the present invention is not only promising as a high-performance light source required for long-distance optical communication, wavelength multiplexing optical communication, etc., but also for optical information processing, optical information recording, optical information recording, and the like. It is expected to be used as a high-performance and compact light source that can replace gas laser devices and solid-state laser devices conventionally used in the fields of applied measurement, light sources of high-speed optical phenomena, and the like.

[Brief description of the drawings]

FIG. 1 is a perspective view showing the structure of a semiconductor distributed feedback laser device according to a first embodiment of the present invention.

FIG. 2 illustrates saturation of light absorption.

FIG. 3 is a schematic diagram showing a hysteresis characteristic of a laser beam output with respect to an injection current.

FIG. 4 is a perspective view showing the structure of a semiconductor distributed feedback laser device according to a second embodiment of the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1, 21 Substrate 2, 22 Buffer layer 3, 8, 23, 28 Cladding layer 4, 24 Active layer 5 Barrier layer 6 Absorption layer doped with carrier killer 7 Diffraction grating 9, 29 Contact layer 11, 12, 31, 32 Electrode Layer 10, 30 Insulating layer 25 Buffer layer 33, 34 Pattern supply layer

────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-62-84583 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01S 5/00-5/50

Claims (4)

(57) [Claims] 1. An active layer that generates stimulated emission light, and a periodic structure that is arranged along the active layer and performs a light distribution feedback on the stimulated emission light generated by the active layer. In a semiconductor distributed feedback laser device that periodically includes an absorption layer formed of a composition that absorbs stimulated emission light generated by an active layer along a laser optical axis parallel to the active layer, the absorption layer includes: Absorption saturation caused by stimulated emission light
To prevent, semiconductor distributed feedback laser device comprising that you impurity to shorten the lifetime of carriers was added. 2. The periodic structure includes a diffraction grating having a periodic irregular shape formed along a laser optical axis direction, an absorption layer is provided on a top of the diffraction grating, and an active layer has irregularities of the diffraction grating. 2. The semiconductor distributed feedback laser device according to claim 1, wherein the thickness is periodically changed according to the shape. 3. The semiconductor distributed feedback laser device according to claim 2, wherein a refractive index distribution canceling structure for canceling a periodic distribution of refractive index by the diffraction grating is provided near the diffraction grating. 4. The material and shape of the diffraction grating and the active layer are selected such that the periodic distribution of the refractive index by the diffraction grating is offset by the periodic distribution of the refractive index by the thickness distribution of the active layer. Semiconductor distributed feedback laser device.