JP3210402B2 - Semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device such as a Schottky barrier diode, a PN junction diode, and a bipolar transistor, and more particularly to a lateral device.
The present invention relates to a semiconductor device having a stripe structure.

[0002]

2. Description of the Related Art Generally, when a Schottky barrier diode (Schottky diode) is integrated on a semiconductor substrate, a horizontal structure is employed. In addition, especially for a Schottky diode used at a high frequency, it is necessary to increase the peripheral length of the Schottky junction in order to obtain a large current value without increasing the junction capacitance of the Schottky junction. And the cathode electrode contact portion is formed by being divided into a plurality of stripes.

FIG. 5 shows a part of an example of a plane pattern of a conventional high frequency Schottky diode having a horizontal stripe structure. Here, 51 is an anode electrode, 52 is a contact portion (Schottky junction) between the anode electrode and a part of the main surface of the N-type semiconductor substrate, 53 is a cathode electrode, and 54 is a cathode electrode and 54 of the main surface of the substrate. This is a contact portion with a partially formed N + region for a cathode electrode contact.

The Schottky junctions 52 and the cathode electrode contact portions 54 are formed so as to be alternately arranged. The anode electrode 51 and the cathode electrode 53 are drawn out in opposite directions to each other. Each lead-out end of the plurality of anode electrodes 51 drawn out in the same direction is connected to a common anode wiring 55 and drawn out in the same direction. Each of the drawn ends of the plurality of cathode electrodes 53 connected to the common cathode wiring 56.

On the other hand, in a high-frequency bipolar transistor as well, it is necessary to increase the circumference of the emitter in order to make the emitter work effectively and to reduce the base resistance. Are divided into a plurality of stripes.

FIG. 6 shows a part of an example of a planar pattern of a conventional high frequency bipolar transistor having a horizontal stripe structure. Here, 61 is an emitter electrode, 62 is a contact portion between the emitter electrode and an N-type emitter region formed on a part of the main surface of the N-type semiconductor substrate, 63 is a base electrode, and 64 is a base electrode and an N-type semiconductor. This is a contact portion with a base electrode contact P + region formed on a part of the main surface of the substrate.

The emitter contact portions 62 and the base electrode contact portions 64 are formed so as to be alternately arranged. The emitter electrode 61 and the base electrode 63 are drawn out in opposite directions to each other. Each lead-out end of the plurality of emitter electrodes 61 drawn out in the same direction is connected to a common emitter wiring 65, and drawn out in the same direction. The drawn ends of the plurality of base electrodes 63 are connected to a common base wiring 66.

In the above-described Schottky diode, it is desirable to reduce the series resistance in order to improve high-frequency characteristics. Therefore, it is necessary to make the Schottky junction 52 and the cathode electrode contact 54 as close as possible. . Therefore, usually, the distance between the anode electrode 51 and the cathode electrode 53 is set to PEP for forming the electrode.
And close to the limit of (photos Sawakoku step), the anode collector
The anode core in a direction perpendicular to the direction in which the poles 51 are pulled out.
From the opening end of the contact hole to the end of the anode electrode 51
Electrode 51 and anode contact hole at
The width that overlaps the formed insulating film (here,
For convenience, the amount of overlap between the anode electrode 51 and the contact hole for the anode will be referred to as “ amount of overlap”.
Cathode contact hole in the direction perpendicular to the
From the open end of the tool to the end of the cathode electrode 53
Electrode 53 and a cathode contact hole are formed.
The width where the insulating film overlaps (the cathode electrode 53
And the amount of overlap between the cathode contact holes ) .

Similarly, in the bipolar transistor having the above-described stripe structure, it is desirable to lower the base resistance in order to improve the high frequency characteristics. Therefore, the emitter contact portion 62 and the base electrode contact portion 64 are made as close as possible. There is a need. Therefore, usually is closer the distance between the emitter electrode 61 and the base electrode 63 to the limit of the electrode PEP, pull the emitter electrode 61
Contact hole for the emitter in the direction perpendicular to the
From the opening end of the tool to the end of the emitter electrode 61.
Electrode 61 and an emitter contact hole are formed.
The width at which the insulating film overlaps (here, for convenience, referred to as the amount of overlap between the emitter electrode 61 and the emitter contact hole ), the direction in which the base electrode 63 is drawn out, and
Open end of base contact hole in orthogonal direction
From the base electrode 63 to the end of the base electrode 63 and the base
Over the insulating film where the contact holes for
The overlap width (the amount of overlap between the base electrode 63 and the base contact hole ) is minimized.

However, if the overlapping amount between the electrode and the contact hole as described above is too small, the electrode PEP
In such a case, misalignment with the contact hole occurs or the contact hole is often exposed when over-etching occurs. At this time, even if the contact hole is not exposed, as shown in FIG. 7, the step portion in the electrode lead portion becomes thin, and the resistance value at that portion increases, leading to deterioration and variation in high frequency characteristics, or extreme In such a case, disconnection (open failure) occurs.

[0011]

As described above, in the conventional semiconductor device, when the mutual interval between the electrodes having the horizontal stripe structure is reduced as much as possible and the amount of overlap between the electrodes and the contact holes is minimized, the electrode lead-out portion is required. In this case, there is a problem that the resistance value and disconnection easily occur.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems. Even when the distance between electrodes having a horizontal stripe structure is reduced as much as possible and the amount of overlap between the electrodes and the contact holes is minimized. An object of the present invention is to provide a semiconductor device capable of increasing the amount of overlap between an electrode and a contact hole in a lead portion, and preventing an increase in resistance value and disconnection in the electrode lead portion.

[0013]

According to the present invention, a first electrode (anode electrode or emitter electrode) and a second electrode (cathode electrode or base electrode) are formed alternately, and the first electrode and the second electrode are formed. The electrodes are drawn out in opposite directions to each other, and each lead-out end of a plurality of first electrodes drawn out in the same direction is connected to a common first wiring, and each of a plurality of second electrodes drawn out in the same direction is connected. Second with common drawer end
In a semiconductor device having a horizontal stripe structure connected to a wiring, a contact portion of a first electrode protrudes in a first electrode lead-out direction from a contact portion of an adjacent second electrode, and a contact portion of the second electrode is adjacent to the first electrode. Projecting from the contact portion of the electrode in the second electrode lead-out direction,
Directly connect with each electrode lead-out direction at the lead-out end of each electrode.
From the opening end of the contact hole to the electrode end in the direction of intersection
The overlap amount between the electrode and the insulating film up to the point where each electrode is pulled out in the area other than the lead end of each electrode is directly
From the opening end of the contact hole to the electrode end in the direction of intersection
And the amount of overlap between the electrode and the insulating film .

[0014]

The overlap between the electrode and the contact hole in the electrode lead-out portion can be increased even when the distance between the electrodes having the horizontal stripe structure is minimized and the overlap between the electrode and the contact hole is minimized. Will be possible.

Thus, even when misalignment with the contact hole or over-etching occurs in the electrode PEP, there is no possibility that the step portion in the electrode lead-out portion becomes thin. Accordingly, it is possible to prevent deterioration and variation in high-frequency characteristics due to an increase in the resistance value of the step portion in the electrode lead portion, and to prevent occurrence of an open failure due to disconnection of the step portion, and to significantly improve the yield and reliability.

[0016]

Embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 shows an example of a plane pattern of a high frequency Schottky diode having a horizontal stripe structure according to a first embodiment of the semiconductor device of the present invention. FIG. 2 shows an example of a cross-sectional structure along the line AA in FIG.

In FIGS. 1 and 2, reference numeral 10 denotes an N-type semiconductor substrate, and reference numeral 11 denotes a high-concentration impurity region (N) for a cathode electrode contact of the same conductivity type as a substrate formed on a part of the main surface of the semiconductor substrate. + Area). This N + region 1
Reference numeral 1 denotes an ohmic junction between the substrate 10 and a cathode electrode 15 described later to reduce series resistance. Reference numeral 12 denotes an insulating film formed so as to cover the main surface of the substrate. Reference numeral 13 denotes a cathode contact hole opened in the insulating film 12;
This is an anode contact hole opened at the bottom. Fifteen
Reference numerals 16 and 16 denote a cathode electrode and an anode electrode formed by patterning a metal film for forming a Schottky barrier on the insulating film 12 and inside the contact holes 13 and 14, respectively. Reference numeral 17 denotes a contact portion between the cathode electrode 15 and the N + region 11, and reference numeral 18 denotes a contact portion (Schottky junction) between the anode electrode 16 and a part of the main surface of the substrate 10.

The Schottky junctions 18 and the N + regions 11 for the cathode electrode contact are formed so as to be alternately arranged. In other words, the anode electrode 16 and the cathode electrode 15 are formed so as to be alternately arranged. The anode electrode 16 and the cathode electrode 15 are drawn out in opposite directions, and each lead-out end of the plurality of anode electrodes 16 drawn out in the same direction is connected to a common anode wiring (metal film) 16a. Each lead-out end of the plurality of cathode electrodes 15 led out in the same direction is connected to a common cathode wiring (metal film) 15a.

Further, in the Schottky diode of the above embodiment, the anode electrode contact portion 18 protrudes in the anode electrode lead-out direction from the adjacent cathode electrode contact portion 17, and the cathode electrode contact portion 17 is adjacent to the adjacent anode electrode contact portion 17. It is formed so as to protrude beyond the contact portion of the electrode 18 in the cathode electrode lead-out direction. Then, the contact in the direction perpendicular to each electrode lead-out direction at the lead- out end of each electrode.
Electrode and insulating film 12 from the opening end of the through hole to the electrode end
(Here, the overlap amount between the electrode and the contact hole for the sake of convenience ) is determined by the method of extracting each electrode in a region other than the extraction end of each electrode.
From the opening end of the contact hole in the direction perpendicular to the
The amount of overlap between the electrode and the insulating film 12 up to the extreme part
(The amount of overlap between the electrode and the contact hole ) .

Here, the manufacturing process of the above-mentioned Schottky diode will be briefly described. First, after an insulating film 12 is formed on the entire surface of the N-type semiconductor substrate 10, a cathode contact hole 13 is opened in an insulating film portion corresponding to a portion where a cathode electrode is to be formed. Next, an N-type impurity such as phosphorus is introduced into the semiconductor substrate from the contact hole 13 to form a high-concentration impurity region (N + region) 11 for a cathode electrode contact. Next, an anode contact hole 14 is opened in an insulating film portion corresponding to a portion where an anode electrode is to be formed so as to be alternately arranged with the cathode contact hole 13. In this case, one end of the anode contact hole 14 is connected to the cathode contact hole 13.
For example, 6
μm, and the other end of the anode contact hole 14 is retracted, for example, by about 6 μm from the other end of the cathode contact hole 13 in the direction in which the anode electrode is to be drawn out (in other words, the anode contact hole 14
The other end of the cathode contact hole 13 is formed so as to protrude by about 6 μm in the direction in which the cathode electrode is to be drawn out from the other end of the cathode contact hole 13). Next, a Schottky barrier forming metal such as Mo (molybdenum) is deposited on the entire surface of the substrate 10 by a method such as sputtering to a thickness of about 250 nm, and then patterned to form the anode electrode 16 and the cathode electrode 15. At the time of this patterning, the anode electrode 1
6 and the cathode electrode 15 are alternately arranged, and the anode electrode 16 and the cathode electrode 15 are pulled out in opposite directions, and each lead end of the plurality of anode electrodes 16 drawn in the same direction is connected to a common anode. Patterning is performed so that each lead-out end of a plurality of cathode electrodes 15 led out in the same direction connected to the wiring 16a is connected to the common cathode wiring 15a.

Thus, the anode electrode contact portion 1
8 project from the adjacent cathode electrode contact portion 17 in the anode electrode drawing direction, and the cathode electrode contact portion 17 is adjacent to the adjacent anode electrode contact portion 18.
It is formed so as to protrude more in the cathode electrode drawing direction.

In the above patterning, the interval between adjacent electrodes is set to, for example, 2 μm, the overlap amount between the electrodes and the contact holes is set to, for example, 2 μm, and the leading end of each electrode is set to, for example, 2 μm from the end of the electrode contact portion. It is formed so as to increase the amount of overlap between the electrode and the contact hole from the inside. In other words, the amount of overlap between the electrode and the contact hole at the leading end of each electrode is larger than the amount of overlap (2 μm) between the electrode and the contact hole in a region other than the leading end of each electrode. Form.

According to the Schottky diode of the above embodiment, even when the mutual interval between the electrodes having the horizontal stripe structure is made as close as possible (to the limit of the electrode PEP) and the amount of overlap between the electrode and the contact hole is minimized. In addition, it is possible to increase the amount of overlap between the electrode and the contact hole in the electrode lead portion.

Thus, even when misalignment with the contact hole or over-etching occurs in the electrode PEP, there is no possibility that the step portion in the electrode lead portion becomes thin. Accordingly, it is possible to prevent deterioration and variation in high-frequency characteristics due to an increase in the resistance value of the step portion in the electrode lead portion, and to prevent occurrence of an open failure due to disconnection of the step portion, and to significantly improve the yield and reliability.

The high-frequency PN having a horizontal stripe structure is not limited to the Schottky diode of the above embodiment.
The pattern configuration of the electrode lead-out end can be applied to the junction diode in the same manner as in the above embodiment. A high-frequency PN junction diode having a horizontal stripe structure is different from the Schottky junction in the Schottky diode described above in that impurities are introduced into a part of the main surface of the semiconductor substrate from the anode contact hole and are opposite to the substrate. An anode region (P region) composed of a conductive impurity region is formed, and an anode electrode is configured to contact the P region. FIG. 3 shows a part of an example of a plane pattern of a high frequency bipolar transistor having a horizontal stripe structure according to a second embodiment of the semiconductor device of the present invention. FIG. 4 shows an example of a cross-sectional structure along the line BB in FIG.

In FIGS. 3 and 4, reference numeral 40 denotes an N-type semiconductor substrate; 41, a base layer formed of an impurity region (P region) of a conductivity type opposite to that of the substrate formed on the main surface of the semiconductor substrate; The substrate formed on a part of the main surface of the semiconductor substrate is a high-concentration impurity region (P + region) for a base electrode contact of the opposite conductivity type. This P + region 42
An ohmic junction is made between the substrate and a base electrode 47 to be described later to reduce the base resistance. 4
Reference numeral 3 denotes an emitter region formed of an impurity region (N region) of the same conductivity type as the substrate formed on a part of the surface of the base layer 41, and formed so as to be aligned with the high-concentration impurity region 42 for base electrode contact. Have been. 44 is an insulating film formed on the main surface of the substrate. 45 is a base contact hole opened in the insulating film; 46 is an emitter contact hole opened in the insulating film;
Reference numerals 48 and 48 denote a base electrode and an emitter electrode formed by patterning a metal film on the insulating film 44 and inside the contact holes 45 and 46, respectively. Reference numeral 49 denotes a contact portion between the base electrode 47 and the P + region 42, and reference numeral 50 denotes a contact portion between the emitter electrodes 48 and the emitter region 43. 51 is a collector electrode formed on the back surface of the substrate.

The emitter regions 43 and the P + regions 42 for base electrode contact are formed alternately. In other words, the emitter electrode 48 and the base electrode 47
Are alternately arranged. The emitter electrode 48 and the base electrode 47 are drawn out in opposite directions, and each lead-out end of the plurality of emitter electrodes 48 drawn out in the same direction is connected to a common emitter wiring (metal film) 48a. Each lead-out end of the plurality of base electrodes 47 drawn in the same direction is connected to a common base wiring (metal film) 47a.

Further, in the bipolar transistor of the above embodiment, the emitter electrode contact portion 50 protrudes from the adjacent base electrode contact portion 49 in the emitter electrode lead-out direction, and the base electrode contact portion 49 is adjacent to the adjacent emitter electrode contact portion. It is formed so as to protrude from the contact portion 50 in the base electrode lead-out direction. Then, the overlap amount between the electrode and the contact hole at the leading end of each electrode is formed to be larger than the overlap amount between the electrode and the contact hole in a region other than the leading end of each electrode. .

Here, a brief description will be given of a manufacturing process of the bipolar transistor. First, after an insulating film 44 is formed on the entire surface of the N-type semiconductor substrate 40, a P-type impurity such as boron is introduced into the semiconductor substrate to form a P + region 42 for base electrode contact. Next, the above P +
The base layer 41 is formed by introducing a P-type impurity such as boron into the semiconductor substrate at a lower concentration than the regions 42 and shallower than the P + region 42. Next, by introducing an N-type impurity such as phosphorus or arsenic into a part of the base layer 41, the emitter region 43 is formed so as to be shallower than the base layer 41 and alternately arranged with the P + region 42. Next, a base contact hole 45 and an emitter contact hole 46 are opened in the insulating film portion corresponding to the base electrode formation scheduled portion and the emitter electrode formation scheduled portion. In this case, one end of the contact hole 46 for the emitter protrudes from the one end of the contact hole 45 for the base, for example, by about 6 μm in the direction in which the emitter electrode is to be drawn out, and the other end of the contact hole 46 for the emitter is more than the other end of the contact hole 45 for the base. For example, the emitter electrode may be retracted by about 6 μm in the direction in which the emitter electrode is to be drawn (in other words,
The other end of the base contact hole 45 is formed so that the other end of the base contact hole 45 projects more than the other end of the emitter contact hole 46 by about 6 μm in the direction in which the base electrode is to be led out. Next, by sputtering or vapor deposition on the entire surface of the substrate,
After a metal such as Al (aluminum) is applied to a thickness of about 1 μm, patterning is performed in the same manner as the anode electrode 16 and the cathode electrode 15 in the first embodiment to form an emitter electrode 48 and a base electrode 47. Further, a collector electrode 51 is formed on the back surface of the substrate. In the bipolar transistor of the above embodiment, the same effect as in the Schottky diode of the above embodiment can be obtained.

[0030]

As described above, according to the semiconductor device of the present invention, even if the mutual interval between the electrodes having the horizontal stripe structure is made as close as possible and the amount of overlap between the electrodes and the contact holes is minimized, the electrode is drawn out. It is possible to increase the amount of overlap between the electrode and the contact hole in the portion.

Therefore, deterioration and dispersion of high frequency characteristics due to an increase in the resistance value of the step portion in the electrode lead portion, and
It is possible to prevent the occurrence of open failure due to disconnection of the step portion, and to greatly improve the yield and reliability.

[Brief description of the drawings]

FIG. 1 is a diagram showing an example of a plane pattern of a high-frequency Schottky diode having a horizontal stripe structure according to a first embodiment of the present invention.

FIG. 2 is a diagram showing an example of a cross-sectional structure along the line AA in FIG.

FIG. 3 is a diagram showing a part of an example of a planar pattern of a high frequency bipolar transistor having a horizontal stripe structure according to a second embodiment of the present invention.

FIG. 4 is a view showing an example of a cross-sectional structure along the line BB in FIG. 3;

FIG. 5 is a diagram showing an example of a planar pattern of a conventional high frequency Schottky diode having a horizontal stripe structure.

FIG. 6 is a diagram showing a part of an example of a plane pattern of a conventional high frequency bipolar transistor having a horizontal stripe structure.

7 is a PEP for forming electrodes in the Schottky diode of FIG. 5 and the bipolar transistor of FIG. 6;
The figure which shows an example of the plane pattern in the case where the step part in the electrode lead-out part becomes thin when over-etching arises at the time.

[Explanation of symbols]

10, 40: N-type semiconductor substrate, 11: N + region for cathode electrode contact, 12, 44: Insulating film, 13: Contact hole for cathode, 14: Contact hole for anode, 15: Cathode electrode, 15a: Cathode wiring ,
Reference numeral 16: anode electrode, 16a: anode wiring, 17: cathode electrode contact portion, 18: anode electrode contact portion (Schottky junction), 41: base layer, 42 ...
P + region for base electrode contact, 43 emitter region, 45 contact hole for base, 46 contact hole for emitter, 47 base electrode, 47a base wiring, 48 emitter electrode, 48a emitter wiring,
49: base electrode contact portion, 50: emitter electrode contact portion, 51: collector electrode.

──────────────────────────────────────────────────続 き Continued on the front page (58) Fields surveyed (Int.Cl. ⁷ , DB name) H01L 29/41 H01L 21/331 H01L 29/73 H01L 29/872

Claims (4)

(57) [Claims] 1. A semiconductor substrate of a first conductivity type, a high-concentration impurity region for a cathode electrode contact of the same conductivity type as a substrate formed on a part of a main surface of the semiconductor substrate, and a main surface of the semiconductor substrate An insulating film covering the insulating film; a cathode electrode patterned and formed on the insulating film and contacting the high-concentration impurity region for the cathode electrode contact through a cathode contact hole opened in the insulating film; The same as the anode electrode having a Schottky junction, which is patterned on the insulating film so as to be alternately arranged and contacts a part of the main surface of the semiconductor substrate through an anode contact hole opened in the insulating film. Are formed so as to be connected to each of the lead ends of the plurality of anode electrodes drawn in the same direction. A semiconductor device having a horizontal stripe structure including an anode wiring, and a cathode wiring formed so as to be commonly connected to each of the drawing ends of a plurality of cathode electrodes drawn in a direction opposite to the drawing direction of the anode electrode. In the above, the contact portion of the anode electrode protrudes in the anode electrode drawing direction from the contact portion of the adjacent cathode electrode, and the contact portion of the cathode electrode projects in the cathode electrode drawing direction from the contact portion of the adjacent anode electrode. And the direction in which each electrode is pulled out at the end of each electrode.
From the opening end of the contact hole in the direction perpendicular to
The amount of overlap between the electrode and the insulating film up to the end is such that each electrode is pulled in a region other than the lead end of each electrode.
Open end of contact hole in the direction perpendicular to the extending direction
A semiconductor device, wherein the amount of overlap between the electrode from the electrode to the electrode end and the insulating film is larger than the amount of overlap. 2. A semiconductor substrate of a first conductivity type, a high-concentration impurity region for a cathode electrode contact of the same conductivity type as a substrate formed on a part of a main surface of the semiconductor substrate, and a main surface of the semiconductor substrate An anode region formed of an impurity region of a conductivity type opposite to that of the substrate formed in part of the high concentration impurity region for the cathode, an insulating film covering a main surface of the semiconductor substrate, A cathode electrode contacted with the high-concentration impurity region for the cathode electrode contact through a cathode contact hole opened in the insulating film, and patterned on the insulating film so as to be alternately arranged with the cathode electrode An anode that is formed and contacts the anode region through an anode contact hole opened in the insulating film. An electrode, an anode wiring formed so as to be connected in common to each lead end of a plurality of anode electrodes drawn in the same direction, and a plurality of cathodes drawn in a direction opposite to the draw direction of the anode electrode In a semiconductor device having a horizontal stripe structure including a cathode wiring formed so as to be connected to each lead end of an electrode in common, the contact part of the anode electrode is in the anode lead-out direction more than the contact part of an adjacent cathode electrode. The contact portion of the cathode electrode projects in the cathode electrode lead-out direction from the contact portion of the adjacent anode electrode, and each electrode lead-out direction at the lead-out end of each electrode.
From the opening end of the contact hole in the direction perpendicular to
The amount of overlap between the electrode and the insulating film up to the end is such that each electrode is pulled in a region other than the lead end of each electrode.
Open end of contact hole in the direction perpendicular to the extending direction
A semiconductor device, wherein the amount of overlap between the electrode from the electrode to the electrode end and the insulating film is larger than the amount of overlap. 3. A semiconductor substrate of a first conductivity type, a base layer made of an impurity region of a conductivity type opposite to that of a substrate formed on a part of a main surface of the semiconductor substrate, and formed on a part of the base layer. A high-concentration impurity region for a base electrode contact of the opposite conductivity type to the substrate, and a substrate of the same conductivity type as a substrate formed alongside the high-concentration impurity region for the base electrode contact on a part of the surface of the base layer. An insulating region covering the main surface of the semiconductor substrate; and a base contact hole for the base electrode contact through a base contact hole formed in the insulating film and patterned on the insulating film. A base electrode in contact with the high-concentration impurity region; and a pattern formed on the insulating film so as to be alternately arranged with the base electrode, and an opening formed in the insulating film. An emitter electrode in contact with the emitter region through the emitter contact hole, an emitter wiring formed so as to be connected to each of the leading ends of the plurality of emitter electrodes drawn in the same direction, and A semiconductor device having a horizontal stripe structure including a base wiring formed so as to be commonly connected to each of the drawing ends of a plurality of base electrodes drawn in a direction opposite to the drawing direction; Projecting from the contact portion of the adjacent base electrode in the direction in which the emitter electrode extends, the contact portion of the base electrode projecting in the direction in which the base electrode extends from the contact portion of the adjacent emitter electrode, and the leading end of each of the electrodes Of each electrode in the section
From the opening end of the contact hole in the direction perpendicular to
The amount of overlap between the electrode and the insulating film up to the end is such that each electrode is pulled in a region other than the lead end of each electrode.
Open end of contact hole in the direction perpendicular to the extending direction
A semiconductor device, wherein the amount of overlap between the electrode and the insulating film from the electrode to the electrode end is greater than the overlap amount. 4. The semiconductor device according to claim 1, wherein a contact portion at the leading end of each electrode protrudes in the electrode leading direction from a contact portion of another adjacent electrode. Is perpendicular to the direction in which each electrode is drawn in a region other than the end of each electrode.
To the open end or al electrode end portion of the contact hole in the direction
A semiconductor device, wherein the amount of overlap between the electrode and the insulating film is not less than the amount of overlap.