JP3205091B2 - Electrode cooling method - Google Patents
Electrode cooling methodInfo
- Publication number
- JP3205091B2 JP3205091B2 JP31162992A JP31162992A JP3205091B2 JP 3205091 B2 JP3205091 B2 JP 3205091B2 JP 31162992 A JP31162992 A JP 31162992A JP 31162992 A JP31162992 A JP 31162992A JP 3205091 B2 JP3205091 B2 JP 3205091B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- electrode
- cooling
- electrostatic attraction
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Drying Of Semiconductors (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明はウエハを静電吸着力によ
り支持してプラズマにより処理するプラズマ処理装置に
おいて、特に０℃以下の温度で静電吸着力の安定化を図
るのに好適な電極の冷却方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus for processing a wafer by plasma while supporting the wafer by the electrostatic attraction force, and particularly to an electrode suitable for stabilizing the electrostatic attraction force at a temperature of 0.degree. To a cooling method.
【０００２】[0002]
【従来の技術】従来のプラズマ処理装置に用いられてい
るウエハの冷却方法としては、例えば特開平１−３０２
７２６号公報記載のものがある。すなわち、処理中のウ
エハを載置する陰極を０℃以下に冷却する手段とウエハ
を支持する手段とウエハ裏面に冷却ガスを導入する手段
を設け、０℃以下の温度に冷媒により冷却された陰極上
にウエハを支持した状態で裏面に冷却ガスを導入して行
っている。また、ウエハの支持手段としては電極をポリ
イミド等の高分子材料やアルミナ等のセラミックス等か
らなる強誘電体ではさんで構成した静電チャックを用い
ている。2. Description of the Related Art As a method of cooling a wafer used in a conventional plasma processing apparatus, for example, Japanese Unexamined Patent Publication No.
No. 726 is described. That is, a means for cooling the cathode on which the wafer being processed is mounted to 0 ° C. or less, a means for supporting the wafer, and a means for introducing a cooling gas to the back surface of the wafer are provided. The cooling gas is introduced into the back surface while the wafer is supported above. Further, as a means for supporting the wafer, an electrostatic chuck having electrodes sandwiched between ferroelectrics made of a polymer material such as polyimide or ceramics such as alumina is used.
【０００３】[0003]
【発明が解決しようとする課題】前記、従来技術を電極
を０℃以下に冷却してウエハを連続してプラズマにより
処理するエッチング装置に適用することを考えると、次
のような解決すべき課題がある。それは、絶縁膜の表面
または内部に吸着されている水分は電極を０℃以下に冷
却した場合には氷となって除去できなくなり、この氷に
よって絶縁膜の静電容量が見かけ上小さくなるため静電
吸着力にばらつきを生じ、ウエハを安定して支持できな
いという問題がある。Considering that the above-mentioned prior art is applied to an etching apparatus which cools an electrode to 0 ° C. or less and continuously processes a wafer by plasma, the following problems are to be solved. There is. This is because the water adsorbed on the surface or inside of the insulating film becomes ice and cannot be removed when the electrode is cooled to 0 ° C. or less, and the ice reduces the capacitance of the insulating film apparently, so that the static electricity is reduced. There is a problem that the electro-adsorption force varies, and the wafer cannot be stably supported.
【０００４】本発明の目的は、吸着力の安定化を図るの
に好適な静電吸着電極の特に０℃以下への冷却方法を提
供することにある。An object of the present invention is to provide a method of cooling an electrostatic chucking electrode suitable for stabilizing the chucking force, particularly to 0 ° C. or lower.
【０００５】[0005]
【課題を解決するための手段】上記目的を達成するため
に、例えば、処理室の清掃後の立ち上げシ−ケンス実行
時に処理室を高真空排気しながら静電吸着電極をサ−キ
ュレ−タにより一度昇温して設定温度に一定時間保持し
た後、０℃以下の所定の処理温度まで冷却するようにし
たものである。In order to achieve the above-mentioned object, for example, a vacuum is applied to the electrostatic chucking electrode while the processing chamber is evacuated to a high vacuum during a startup sequence after cleaning the processing chamber. , The temperature is raised once, maintained at a set temperature for a certain time, and then cooled to a predetermined processing temperature of 0 ° C. or less.
【０００６】[0006]
【作用】静電吸着電極を真空中で昇温して一定時間保持
することにより、絶縁膜の表面または内部に吸着されて
いる水分を短時間で確実に蒸発させて除去し、その後０
℃以下の所定の処理温度まで冷却するので、絶縁膜の表
面あるいは内部に氷を生じることがなく、吸着力の安定
化を図ることができる。By raising the temperature of the electrostatic attraction electrode in a vacuum and holding it for a certain period of time, moisture adsorbed on the surface or inside of the insulating film is evaporated and removed in a short time, and then the water is removed.
Since cooling is performed to a predetermined processing temperature of not more than ° C, ice is not generated on the surface or inside of the insulating film, and the adsorption power can be stabilized.
【０００７】[0007]
【実施例】以下、本発明の一実施例を適用したいわゆる
有磁場マイクロ波エッチング装置の構成を図１により説
明する。ウエハ１のエッチングは、放電管２内をロ−タ
リ−ポンプ３、タ−ボ分子ポンプ４により真空排気した
後、所定の流量導入したプロセスガス５をマイクロ波６
とソレノイド７による磁場の相互作用によりプラズマ８
化し、さらに、下部電極９に高周波電源１０により高周
波を印加してウエハ１に入射するイオンのエネルギ−を
制御しながら行う。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The construction of a so-called magnetic field microwave etching apparatus to which an embodiment of the present invention is applied will be described below with reference to FIG. The wafer 1 is etched by evacuating the inside of the discharge tube 2 by a rotary pump 3 and a turbo molecular pump 4 and then applying a process gas 5 introduced at a predetermined flow rate to a microwave 6.
Plasma 8 due to the interaction of
Then, high frequency is applied to the lower electrode 9 by the high frequency power supply 10 to control the energy of ions incident on the wafer 1.
【０００８】ウエハ１のエッチングが終了すると、該エ
ッチング済みのウエハ１はウエハ押し上げ装置１１の作
動により下部電極９から搬送装置（図示省略)に渡され
た後、該搬送装置により他の場所に搬送される。When the etching of the wafer 1 is completed, the etched wafer 1 is transferred from the lower electrode 9 to a transfer device (not shown) by the operation of the wafer lifting device 11, and then transferred to another place by the transfer device. Is done.
【０００９】また、下部電極９上にはタングステン電極
１２にＳｉＣ焼結体１３をろう材１４により接合して構
成した静電吸着電極１５が固定されており、さらに、下
部電極９と直流電源１６の間にはスイッチ１７が設けて
あり、スイッチ１７をオン，オフすることによりに静電
吸着電極１５に直流電圧を印加できるようにしてある。On the lower electrode 9, an electrostatic attraction electrode 15 formed by joining a SiC sintered body 13 to a tungsten electrode 12 with a brazing material 14 is fixed. A switch 17 is provided between them, and a DC voltage can be applied to the electrostatic attraction electrode 15 by turning the switch 17 on and off.
【００１０】一方、エッチングされるウエハ１の冷却
は、スイッチ１７をオンして静電吸着電極１５とウエハ
１間に直流電源１６により直流電圧を印加した後、前述
した方法によりプラズマ８を生成することにより生じる
静電吸着力によりウエハ１を支持した状態で、マスフロ
−コントロ−ラ１８を開いてＨｅガス１９をウエハ１裏
面に導入することにより行う。また、下部電極９はヒ−
タ２１と冷凍機２２を内蔵したサ−キュレ−タ２３によ
り冷媒２４を循環することにより温度調節されている。On the other hand, for cooling the wafer 1 to be etched, a switch 17 is turned on, a DC voltage is applied between the electrostatic chucking electrode 15 and the wafer 1 by a DC power supply 16, and a plasma 8 is generated by the above-described method. This is performed by opening the mass flow controller 18 and introducing He gas 19 to the back surface of the wafer 1 in a state where the wafer 1 is supported by the electrostatic attraction force generated thereby. Further, the lower electrode 9 is
The temperature is controlled by circulating a refrigerant 24 by a circulator 23 containing a heater 21 and a refrigerator 22.
【００１１】次に、本発明による静電吸着電極１５の初
期冷却方法を図２により説明する。エッチング装置の立
ち上げシ−ケンスが開始されて放電管２内がタ−ボ分子
ポンプ４により高真空排気されると、静電吸着電極１５
の冷却が開始される。まず、サ−キュレ−タ２３のヒ−
タ２１により冷媒２４を設定温度Ｔ1℃まで加温しなが
ら下部電極９内を循環して静電吸着電極１５を室温以上
のＴ1℃まで昇温する。その後、静電吸着電極１５をＴ1
℃に時間ｔ1だけ保持した後、逆にサ−キュレ−タ２３
の冷凍機２２により冷媒２４を０℃以下の処理温度Ｔ2
℃まで冷却しながら下部電極９内を循環して静電吸着電
極１５をＴ2℃まで冷却する。Next, an initial cooling method of the electrostatic attraction electrode 15 according to the present invention will be described with reference to FIG. When the start-up sequence of the etching apparatus is started and the inside of the discharge tube 2 is evacuated to a high vacuum by the turbo molecular pump 4, the electrostatic adsorption electrode 15
Is started. First, the heat of the circulator 23
The heater 24 is circulated in the lower electrode 9 while heating the coolant 24 to the set temperature T 1 ° C by the heater 21, and the temperature of the electrostatic attraction electrode 15 is raised to T 1 ° C above room temperature. Then, the electrostatic attraction electrode 15 is set to T 1
After holding for a time t 1 in ° C., reversed - circulator - motor 23
Of the refrigerant 24 by the refrigerator 22 at a processing temperature T 2 of 0 ° C. or less.
° C. circulating in the lower electrode 9 while cooling to cool the electrostatic chuck electrode 15 to T 2 ° C..
【００１２】以上の手順により静電吸着電極１５の初期
冷却を行うことにより、絶縁膜の表面または内部に吸着
されている水分を短時間で確実に蒸発させて除去するこ
とができる。なお、設定温度Ｔ1℃，処理温度Ｔ2℃，保
持時間ｔ1はシ−ケンスコントロ−ラにより任意に設定
可能な値である。By performing the initial cooling of the electrostatic attraction electrode 15 according to the above procedure, the moisture adsorbed on the surface or inside of the insulating film can be reliably evaporated and removed in a short time. The set temperature T 1 ° C, the processing temperature T 2 ° C, and the holding time t 1 are values that can be arbitrarily set by a sequence controller.
【００１３】[0013]
【発明の効果】本発明によれば、特に０℃以下の処理温
度において静電吸着力の安定化を図ることができる。According to the present invention, the electrostatic attraction force can be stabilized particularly at a processing temperature of 0 ° C. or lower.
【図１】本発明の一実施例を適用したエッチング装置の
全体構成図である。FIG. 1 is an overall configuration diagram of an etching apparatus to which an embodiment of the present invention is applied.
【図２】本発明の一実施例の電極冷却方法を説明する図
である。FIG. 2 is a diagram illustrating an electrode cooling method according to an embodiment of the present invention.
１５…静電吸着電極、２１…ヒ−タ、２２…冷凍機、２
３…サ−キュレ−タ。15 ... electrostatic attraction electrode, 21 ... heater, 22 ... refrigerator, 2
3 ... circulator.
Claims (1)
段と、静電吸着によりウェハを支持する手段と、ウェハ
裏面に冷却ガスを導入する手段等とからなるウェハ冷却
手段を有するプラズマ処理装置の静電吸着電極の冷却方
法において、 大気開放後のプラズマ処理室内を真空排気後、ウェハ処
理前に前記電極を昇温して一定時間高温に保持した後、
所定の処理温度に冷却することを特徴とする静電吸着電
極の冷却方法。 1. A plasma processing apparatus having a wafer cooling means including means for raising or cooling an electrode by circulation of a refrigerant, means for supporting a wafer by electrostatic attraction, means for introducing a cooling gas to the back surface of the wafer, and the like. In the method for cooling the electrostatic chucking electrode, after evacuation of the plasma processing chamber after opening to the atmosphere, and before the wafer processing, the electrode is heated and kept at a high temperature for a certain time,
A method for cooling an electrostatic attraction electrode, comprising cooling to a predetermined processing temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31162992A JP3205091B2 (en) | 1992-11-20 | 1992-11-20 | Electrode cooling method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31162992A JP3205091B2 (en) | 1992-11-20 | 1992-11-20 | Electrode cooling method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06163464A JPH06163464A (en) | 1994-06-10 |
| JP3205091B2 true JP3205091B2 (en) | 2001-09-04 |
Family
ID=18019568
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31162992A Expired - Fee Related JP3205091B2 (en) | 1992-11-20 | 1992-11-20 | Electrode cooling method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3205091B2 (en) |
-
1992
- 1992-11-20 JP JP31162992A patent/JP3205091B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06163464A (en) | 1994-06-10 |
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