JP3196831B2 - Method for manufacturing semiconductor laser device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method of manufacturing a semiconductor laser element to realize a high-output stable operation deterioration of the cavity facet is suppressed by the optical damage.

[0002]

2. Description of the Related Art In a semiconductor laser device composed of AlGaAs-based and AlGaInP-based semiconductor materials, the cavity facet is deteriorated (optical damage, Catastroph
ic Optical Damage (COD) is known to occur. This optical damage is caused by a rise in the temperature of the cavity facet accompanying the high-power operation. That is, the laser light is absorbed at the cavity end face via the surface level, and locally generates heat. This light absorption increases due to oxidation of the cavity facets and generation of point defects such as vacancies. Due to the temperature rise, the forbidden band width near the end face is reduced, the absorption of laser light is further increased, and the end face temperature rises. With this positive feedback loop,
Eventually, the end face of the resonator is melted and deteriorated.

Conventionally, in order to suppress light absorption at the cavity end face, various window structures for forming a material transparent to laser light on the cavity end face have been tried. For example, in 1989, the 25th issue of IEEE J. Quantum Electron.
Vol., Pp. 1495 to 1499, according to a report, patterning of the cavity facet in the active region, selective etching, to form a window structure for suppressing light absorption at the cavity facet.
And a buried regrowth process (FIG. 1).
5).

Further, in order to suppress light absorption due to an oxide film on the end face of the resonator, a cleavage process in an ultra-high vacuum has been attempted. For example, according to U.S. Pat. No. 5,063,173, a cavity facet is formed by cleaving a laser wafer 52 in an ultra-high vacuum, and an oxide film is formed on a semiconductor surface at the cavity facet by depositing a material such as Si. (FIG. 16).

[0005]

As described above, various window structures for suppressing light absorption at the end face have been tried in order to suppress the end face deterioration of the semiconductor laser. However, formation of this window structure requires processing processes of patterning, selective etching, and burying regrowth of the resonator end face in the active layer region. In a semiconductor laser using an Al-based material, a strong oxide film is formed at the regrowth interface, so that the regrowth interface has a window structure with many interface states.
Since these interface states increase light absorption, COD degradation cannot be effectively suppressed. Further, the addition of the window structure greatly complicates the structure of the laser element, and has the disadvantage that the productivity is significantly reduced due to the yield of each process.

On the other hand, a cleavage process in an ultra-high vacuum has been attempted in order to suppress light absorption caused by an oxide film on the end face of the resonator. By coating the cavity facet in ultra-high vacuum, direct oxidation of the laser facet can be suppressed.
However, in order to suppress light absorption due to surface levels, a material having a large band gap with respect to laser light must be used.
It is necessary to grow crystals without defects. Therefore, if the cavity facet is simply covered, the light output and the operation time of the laser device increase, causing interdiffusion between the coating material and the semiconductor material on the cavity facet and generation of point defects. These eventually cause end face deterioration to increase light absorption.

According to the present invention, the formation of an oxide film on the cavity facet of a semiconductor laser device is suppressed, and at the same time, the thermal and chemical stability of the cavity facet is improved to suppress COD degradation, thereby achieving high power output. It realizes long-term stable operation.

[0008]

According to the manufacturing method of the present invention, in a semiconductor laser device having a pair of cavity facets, at least one cavity facet is covered with a protective film, and the protective film is A semiconductor laser device including a metamorphic layer containing a first semiconductor element constituting the cavity end face and a second semiconductor element or a dielectric element of a different type from the first semiconductor element can be manufactured. .

This semiconductor laser device comprises a modified layer containing (a) a first semiconductor element constituting a cavity facet, and (b) a second semiconductor element or a dielectric element of a type different from that of (a). The end face of the resonator is covered with the included protective film. Since this denatured layer is thermally and chemically stable, it suppresses the internal diffusion of oxygen atoms due to the oxidation reaction in the atmosphere, generates point defects on the surface due to the formation of the oxide film, and enters the inside of the crystal. Movement can be suppressed. Therefore, formation of an oxide film, internal diffusion of impurities,
In addition, light absorption at the end face of the resonator due to an increase in point defects is reduced, and induction of COD degradation is suppressed.

According to the manufacturing method of the present invention , in a semiconductor laser device having a pair of cavity facets, at least one cavity facet has a different type from the first semiconductor element constituting the cavity facet. A layer containing a second semiconductor element or a dielectric element, and a metamorphic layer near an interface between the film and the resonator end face, wherein the metamorphic layer is formed in the resonator end face by the second semiconductor element or A semiconductor laser device comprising a layer formed by diffusing the dielectric element and / or a layer formed by diffusing the first semiconductor element in the film is manufactured. Can
You.

This semiconductor laser device has a metamorphic layer in which elements are diffused from one side to the other, near the interface between the film and the cavity end face. The modified layer having such a configuration is particularly excellent in thermal and chemical stability, can effectively suppress the internal diffusion of oxygen atoms and the generation and movement of point defects accompanying the formation of an oxide film, and furthermore, by a simple process. It also has the advantage of stable production.

In the above-described semiconductor laser device, even if the modified layer contains molecules in which the first semiconductor element constituting the cavity facet and the second semiconductor element or the dielectric element are chemically bonded, good. Thereby, thermal and chemical stability may be further improved.

According to the present invention, in a method for manufacturing a semiconductor laser device having a pair of cavity facets, at least one cavity facet is formed by cleavage in an ultra-high vacuum, and then the cavity facet is formed on the cavity facet. Manufacturing a semiconductor laser device characterized by depositing a second semiconductor material or a dielectric material of a different type from the first semiconductor material constituting the cavity facet, and then subjecting the cavity facet to heat treatment A method is provided.

According to the present invention, in a method for manufacturing a semiconductor laser device having a pair of cavity facets, at least one cavity facet is formed by cleavage in an ultra-high vacuum, and then the cavity facet is formed. A semiconductor laser device comprising: depositing a second semiconductor material or a dielectric material of a different type from the first semiconductor material forming the resonator facet, and thereafter performing a plasma process on the resonator facet. Is provided.

According to these semiconductor laser device manufacturing methods, since the cavity facets are formed by cleavage in an ultra-high vacuum, the formation of impurity layers such as oxide films on the facets can be prevented. As a result, a semiconductor material or a dielectric material different from the semiconductor material forming the resonator end face is directly deposited on the resonator end face. For this reason, a metamorphic layer can be formed by diffusion of the constituent elements of the deposited film and / or the cavity end face. The diffusion of the constituent elements is performed by applying thermal or chemical energy to the cavity end face by heat treatment or plasma treatment.

[0016]

DETAILED DESCRIPTION OF THE INVENTION In the present invention, "second semiconductor"
Material or dielectric material _{", Si, Ge, CaF 2,} MgF 2, ZnS
e, Si ₃ N ₄ , or TaSi ₂ is preferable. By selecting such a material , a metamorphic layer with particularly excellent thermal and chemical stability can be obtained, and the generation and movement of point defects due to internal diffusion of oxygen atoms and formation of an oxide film can be effectively suppressed. .

In the method of manufacturing a semiconductor laser device according to the present invention, the second semiconductor material or the dielectric material may be at room temperature to 3
It can be deposited at a temperature of about 00 ° C. As a deposition method, for example, it is preferable to use an electron beam evaporation method. This is because a thin film having a thickness of about several nm can be easily formed.

The heat treatment in the method for manufacturing a semiconductor laser device of the present invention is preferably a thermal annealing treatment performed in an ultra-high vacuum. Here, the degree of vacuum of “ultra-high vacuum” is
The pressure is preferably 10 ^-8 torr or less (meaning that the pressure is 10 ^-8 torr or less), and more preferably 10 ^-9 torr or less. This prevents an oxide film from being formed on the surface of the metamorphic layer. The heating temperature is preferably 1
50 ° C. or more and 750 ° C. or less, more preferably 500 ° C. or more and 650 ° C. or less. By setting the temperature to 150 ° C. or higher, the diffusion of elements is performed favorably, and the denatured layer is suitably formed. By setting the temperature to 750 ° C. or lower, a change in the doping profile of the semiconductor layer included in the laser due to the heat treatment can be prevented.

The heat treatment is preferably carried out while irradiating a molecular beam of As or P or radical hydrogen. This is because it is possible to effectively prevent the generation of a point defect near the cavity end face.

[0020]

The embodiments of the present invention will be described below with reference to examples.

Embodiment 1 First, an oscillation wavelength of 0.98 μm having an InGaAs strained quantum well structure
A method for manufacturing an m-band lateral mode control type semiconductor laser wafer will be described.

FIG. 1 shows a sectional structure of a semiconductor laser wafer. The semiconductor laser wafer was grown by a normal pressure MOVPE apparatus. GaAs: S on Si-doped GaAs (001) substrate 1
0.5 μm of i-buffer layer 2 (impurity concentration = 1 × 10 ¹⁸ cm ⁻³ )
m, Al _0.4 Ga _0.6 As: Si clad layer 3 (impurity concentration = 1 × 10
¹⁷ cm ⁻³ ) was grown at 2 μm, a growth temperature of 700 ° C., and a V / III ratio of 100. Next, at a growth temperature of 680 ° C. and a V / III ratio of 80, Al _0.2 Ga
_0.8 As optical guide layer 4 of 40 nm, GaAs barrier layer 5 of 20 nm, In
_0.24 Ga _0.76 As active layer 6 is 4.5 nm, GaAs barrier layer 7 is 5 nm,
In _0.24 Ga _0.76 As 4.5 nm for active layer 8 and 20 n for GaAs barrier layer 9
m grown sequentially. Subsequently, the Al _0.2 Ga _0.8 As light guide layer 1
0 is 40 nm, Al _0.4 Ga _0.6 As: Mg cladding layer 11 (impurity concentration = 1 × 10 ¹⁸ cm ⁻³ ) is 1.5 μm, GaAs: Mg cap layer 12
(Impurity concentration = 1 × 10 ¹⁹ cm ⁻³ ) was vapor-phase grown at 1 μm.

Next, a process for processing the above-described semiconductor laser wafer into a transverse mode control type laser will be described with reference to FIGS. FIG. 2 shows a (-110) sectional view of the semiconductor laser wafer after the formation of the mesa stripe in the [-110] direction. First,
SiO ₂ was formed on the uppermost GaAs cap layer of the semiconductor laser wafer shown in FIG. 1, and a 4 μm wide SiO ₂ stripe 13 was formed in the [-110] direction shown in FIG. 2 by photolithography. The Al _0.4 Ga _0.6 As: Mg cladding layer 11 is formed by the selective etching technique using the SiO ₂ stripe as a mask.
Etching was performed to a depth of 0.3 μm to form a mesa stripe shown in the sectional view of FIG.

Subsequently, by the selective growth technique using the SiO ₂ stripe as a mask, the side portion of the mesa stripe as shown in FIG. 3 is formed into a 0.8 μm-thick Al _0.6 Ga _0.4 As: Si current blocking layer 14 (impurity concentration). = 1 × 10 ¹⁸ cm ^-3 ) and thickness 0.8 μm
GaAs: Si current blocking layer 15 (impurity concentration = 1 × 10 ¹⁸ cm
^{In step -3} ), burying growth is performed sequentially. Further, after removing the SiO ₂ mask, a 1 μm-thick GaAs: Mg cap layer 16 (impurity concentration = 1 × 10 ¹⁹ cm ⁻³ ) was grown. Finally, contact electrodes were vapor-deposited on both surfaces of the wafer, respectively, to obtain a lateral mode control type semiconductor laser wafer.

The semiconductor laser wafer 17 is held by a laser bar holder 18 in an ultra-high vacuum chamber 21, and is perpendicular to the stripe by a cleavage press 19 [110].
(Fig. 4). Cleavage was performed in an ultra-high vacuum of about 10 ^-10 . Thus, a laser bar having the (−110) plane as the cavity end face is formed. 4A and 4B, the dotted line portion corresponds to the (-110) plane, and a plurality of horizontal lines drawn in the laser wafer 17 correspond to the convex portions of the cap layer 12 in FIG. are doing.

Thereafter, a 3 nm-thick Si film was deposited at 250 ° C. by the electron beam evaporator 22 without exposing the laser bar to the atmosphere and a low vacuum region (FIG. 5). FIG.
(B) is a top view of a laser wafer on which a plurality of laser bars are arranged, in which a plurality of straight lines running in the horizontal direction are:
This corresponds to the projection of the cap layer 12 in FIG. Here, since the laser bar is kept in the ultra-high vacuum even after cleavage, no impurity layer such as an oxide film exists on the end face of the resonator.

Subsequently, while irradiating the hydrogen radicals 23, the laser bar is heated at 400 ° C. for 30 minutes by the heater 20.
And heated. Irradiation with hydrogen radicals suppresses an increase in point defects generated near the resonator end face during the thermal annealing process.
In addition, since point defects are generated due to the desorption of group V atoms, irradiation with group V molecular beams formed during thermal annealing, in this case, As molecular beams also suppresses the generation of point defects. It is effective for. This thermal annealing process causes the semiconductor layer and the Si layer on the cavity end face to undergo a thermal diffusion process and undergo a thermal diffusion process.
Is formed. By forming a metamorphic layer on the end face of the resonator, even when the laser bar is exposed to the atmosphere, formation of an oxide film on the end face of the resonator and diffusion of oxygen atoms due to oxidation are effectively suppressed. That is, since a thermally and chemically stable modified layer is formed on the cavity facet, even if the laser element is operated at a high output for a long time, the facet is not degraded. In the formation of the modified layer, Ge, CaF ₂ , MgF ₂ , ZnSe, Si ₃ N ₄ , TaSi ₂ or the like can be used in addition to Si.

Next, an Al ₂ O ₃ film 25 and a multilayer film of Al ₂ O ₃ 26 and amorphous Si 27 are respectively deposited on the resonator end face of the laser bar by using a sputtering apparatus, and 3% -95
% Light reflectance was obtained (FIG. 6). Finally, the laser bar was divided into individual laser elements by cleavage, and was fused to a heat sink to complete the laser element of the present invention.

FIG. 7 shows the change in the COD level of the 0.98 μm band semiconductor laser device (A) having a metamorphic layer formed on the cavity facet according to the present invention and the laser device (B) having no metamorphic layer formed thereon. Laser element, ambient temperature 50 ° C, light output 250mW
And the COD level was measured from the current-light output characteristics at each operation time. In the laser device in which the metamorphic layer was not formed, a decrease in the COD level was observed with an increase in the operation time. However, the COD level of the laser element having the metamorphic layer formed on the end face of the resonator showed a substantially constant value without lowering. This indicates that the formation of the metamorphic layer on the end face of the resonator effectively suppresses the COD degradation.

The present invention can be applied not only to a semiconductor laser device of 0.98 μm band but also to a semiconductor laser device of other oscillation wavelength (0.6 to 0.8 μm band semiconductor laser device) made of AlGaInAsP-based material.

Embodiment 2 An embodiment in which the present invention is applied to an AlGaInP semiconductor laser having an oscillation wavelength of 0.6 μm will be described below. First, a method for manufacturing a laser wafer will be described.

FIG. 8 shows a sectional structure of a semiconductor laser wafer. The semiconductor laser wafer was grown by the reduced pressure MOVPE method. GaAs on the Si-doped GaAs (001) substrate 28
s: The Si buffer layer 29 (impurity concentration = 1 × 10 ¹⁸ cm ⁻³ )
0.5 μm, (Al _0.6 Ga _0.4 ) _0.5 In _0.5 P: Si clad layer 30
(Impurity concentration = 5 × 10 ¹⁷ cm ⁻³ ) is 1 μm, Ga _0.5 In _0.5 P active layer 31 is 0.1 μm, (Al _0.6 Ga _0.4 ) _0.5 In _0.5 P: Zn cladding layer 32 (impurity concentration = 5 × 10 ¹⁷ cm ^-3 ). cm ⁻³ ) is 1 μm, GaA
s: Zn cap layer 33 (impurity concentration = 6 × 10 ¹⁸ cm ⁻³ )
Vapor-phase growth was performed sequentially by 5 μm. At this time, the growth temperature is 700 ° C,
The growth is performed at a pressure of 100 Torr and a V / III ratio of 160.

Next, a process of processing the above-described semiconductor laser wafer into a transverse mode control type laser will be described with reference to FIGS. FIG. 9 shows a (-110) sectional view of the semiconductor laser wafer after the formation of the mesa stripe in the [-110] direction. First,
SiO ₂ was formed on the uppermost GaAs cap layer of the semiconductor laser wafer shown in FIG. 8, and a 4 μm wide SiO ₂ stripe 34 was formed in the [-110] direction shown in FIG. 9 by photolithography. Using a selective etching technique using the SiO ₂ stripe as a mask, the (Al _0.6 Ga _0.4 ) _0.5 In _0.5 P: Zn clad layer was etched to a depth of 0.5 μm to form a mesa stripe shown in the sectional view of FIG.

Subsequently, by the selective growth technique using the SiO ₂ stripe as a mask, the side portion of the mesa stripe as shown in FIG.
The buried growth is performed (impurity concentration = 1 × 10 ¹⁸ cm ⁻³ ). Further, after removing the SiO ₂ mask, a 1 μm-thick GaAs: Zn cap layer 36 (impurity concentration = 1 × 10 ¹⁹ cm ⁻³ ) was grown.
Finally, contact electrodes were vapor-deposited on both surfaces of the wafer, respectively, to obtain a lateral mode control type semiconductor laser wafer.

The semiconductor laser wafer 37 is held by a laser bar holder 38 in an ultra-high vacuum chamber 41,
With the cleaving press 39, it is perpendicular to the stripe [110]
(Fig. 11). Cleavage was performed in an ultra-high vacuum of about 10 ^-10 . In this way, a laser bar having the (−110) plane as the cavity end face was formed. 11A and 11B, the dotted lines correspond to the (-110) plane, and a plurality of straight lines running in the horizontal direction drawn in the laser wafer 37 correspond to the concave portions of the cap layer 36 in FIG. ing.

Thereafter, a Ge film having a thickness of 15 nm was deposited at 250 ° C. by the electron beam evaporator 42 without exposing the laser bar to the atmosphere and the low vacuum region (FIG. 12).
(B)). FIG. 12B is a top view of the laser wafer on which a plurality of laser bars are arranged. In the drawing, a plurality of straight lines running in the horizontal direction correspond to the concave portions of the cap layer 36 in FIG.

Next, the above-mentioned laser bar was heated at 200 ° C. by the heater 40 in Ar plasma in the sputtering apparatus.
Heated for minutes. In the Ge film deposited on the end face of the resonator, the semiconductor layer and the Ge layer undergo a diffusion process to form a denatured layer 43 near the end face of the resonator due to the collision energy of the Ar plasma (FIG. 12B). Since the metamorphic layer formed here is a layer that is thermally and chemically stable, even if the laser device is operated at a high output for a long time, the degradation of the end face does not occur. In forming the modified layer, in addition to Ge, Si, CaF ₂ , Mg
F ₂ , ZnSe, Si ₃ N ₄ , TaSi ₂ or the like can be used.

Subsequently, an Al ₂ O ₃ film 44 and a multilayer film of Al ₂ O ₃ 45 and amorphous Si 46 are respectively deposited on the resonator end face of the laser bar by using a sputtering apparatus, and a 7% -9
A light reflectance of 5% was obtained (FIG. 13). Finally, the laser bar was divided into individual laser elements by cleavage, and was fused to a heat sink to complete the laser element of the present invention.

FIG. 14 shows changes in the COD level of a 0.6 μm band semiconductor laser device (A) having a metamorphic layer formed on the cavity facet according to the present invention and a laser device (B) having no metamorphic layer formed thereon. The laser element was operated at an ambient temperature of 70 ° C. and an optical output of 30 mW.
OD levels were measured. In the laser device in which the metamorphic layer was not formed, a decrease in the COD level was observed with an increase in the operation time. However, the COD level of the laser element having the metamorphic layer formed on the end face of the resonator showed a substantially constant value without lowering. This indicates that the formation of the metamorphic layer on the end face of the resonator effectively suppresses the COD degradation.

The present invention can be applied not only to a 0.6 μm band semiconductor laser, but also to a semiconductor laser device having another oscillation wavelength (a 0.7 to 0.9 μm band semiconductor laser device) made of an AlGaInAsP-based material.

[0041]

According to the present invention, since the cavity facet is formed in an ultra-high vacuum, there is no impurity layer such as an oxide film on the cavity facet. By forming a modified layer on the surface of this clean resonator end face, it is possible to realize a thermally and chemically stable resonator end face without internal diffusion of oxygen atoms even in the atmosphere. In other words, even when the semiconductor laser device is operated for a long time at a high output, the occurrence of COD degradation can be effectively prevented since the occurrence of mutual diffusion and point defects at the cavity facets is suppressed.

Further, since the processing of patterning, selective etching, and burying regrowth of the cavity end face in the active region of the laser element is not performed, the structure of the laser element is not complicated, and the productivity is improved. There is no lowering. Further, a wide variety of semiconductor laser devices have a wide adaptability by the same process.

[Brief description of the drawings]

FIG. 1 is a diagram showing a layer structure of a semiconductor laser wafer.

FIG. 2 is a sectional view when a semiconductor laser wafer is selectively etched by SiO ₂ stripes.

FIG. 3 is a cross-sectional view when embedded and regrown in a selectively etched semiconductor laser wafer.

FIG. 4 is a view illustrating a cleavage step in forming a resonator end face of the semiconductor laser bar.

FIG. 5 is a diagram for explaining deposition of a Si film on a semiconductor laser bar and irradiation of hydrogen radicals.

FIG. 6 is a top view illustrating a dielectric film coating in a semiconductor laser bar.

FIG. 7 is a diagram illustrating a change in the COD level of the laser device of the present invention and the conventional technology.

FIG. 8 is a diagram showing a layer structure of a semiconductor laser wafer.

FIG. 9 is a sectional view when a semiconductor laser wafer is selectively etched by SiO ₂ stripes.

FIG. 10 is a cross-sectional view when embedded and regrown in a selectively etched semiconductor laser wafer.

FIG. 11 is a diagram illustrating a cleavage step in forming a cavity facet of a semiconductor laser bar.

FIG. 12 is a diagram illustrating deposition of a Ge film on a semiconductor laser bar and irradiation of hydrogen radicals.

FIG. 13 is a diagram illustrating a dielectric film coating in a semiconductor laser bar.

FIG. 14 shows CODs of laser devices according to the present invention and the prior art.
It is a figure explaining a change of a level.

FIG. 15 is a view illustrating a method of manufacturing a semiconductor laser device according to a conventional example.

FIG. 16 is a view illustrating a method of manufacturing a semiconductor laser device according to a conventional example.

[Explanation of symbols]

Reference Signs List 1 GaAs (001) substrate 2 GaAs: Si buffer layer 3 Al _0.4 Ga _0.6 As: Si cladding layer 4 Al _0.2 Ga _0.8 As optical guide layer 5 GaAs barrier layer 6 In _0.24 Ga _0.76 As active layer 7 GaAs barrier layer 8 In _0.24 Ga _0.76 As active layer 9 GaAs barrier layer 10 Al _0.2 Ga _0.8 As optical guide layer 11 Al _0.4 Ga _0.6 As: Mg cladding layer 12 GaAs: Mg cap layer 13 SiO ₂ stripe 14 Al _0.6 Ga _0.4 As: Si current blocking layer 15 GaAs: Si current block layer 16 GaAs: Mg cap layer 17 Semiconductor laser bar 18 Laser bar holder 19 Cleavage press 20 Heater 21 Ultra-high vacuum chamber 22 Electron beam evaporator 23 Radical hydrogen source 24 Metamorphic layer 25 Al ₂ O ₃ film 26 Al ₂ O ₃ film 27 Amorphous Si film 28 GaAs (001) substrate 29 GaAs: Si buffer layer 30 (Al _0.6 Ga _0.4 ) _0.5 In _0.5 P: Si cladding layer 31 Ga _0.5 In _0.5 P Active layer 32 (Al _0.6 Ga _0.4 ) _0.5 In _0.5 P: Zn clad layer 33 GaAs: Zn cap layer 34 SiO ₂ stripe 35 GaAs: Si current block layer 36 GaAs: Zn cap layer 37 Semiconductor laser bar 38 Laser bar holder 39 Cleavage press 40 Heater 41 Ultra-high vacuum chamber 42 Electron beam evaporator 43 Metamorphic layer 44 Al ₂ O ₃ film 45 Al ₂ O ₃ film 46 Amorphous Si film 51 Holder 52 Laser wafer 53 Ultra-high vacuum chamber

Continuation of the front page (56) References JP-A-6-104522 (JP, A) JP-A-3-101183 (JP, A) JP-A-54-126488 (JP, A) JP-A-10-233553 (JP, A) JP-A-5-67835 (JP, A) JP-A-9-186396 (JP, A) JP-A-6-104522 (JP, A) JP-A-8-97506 (JP, A) (58) Field surveyed (Int. Cl. ⁷ , DB name) H01S 5/00-5/50 JICST file (JOIS)

Claims (8)

(57) [Claims] In a method of manufacturing a semiconductor laser device having a pair of resonator end faces, at least one resonator end face is formed by cleavage in an ultra-high vacuum, and then the resonator end face is formed on the resonator end face. Deposit a second semiconductor material or a dielectric material different from the first semiconductor material to be composed,
Thereafter, the end face of the resonator is placed in an ultra-high vacuum for 150
A method for manufacturing a semiconductor laser device, comprising performing a thermal annealing process of heating at a temperature of not less than 750 ° C. and not more than 750 ° C. 2. The method according to claim 1, wherein the second semiconductor material or the dielectric material is any one of Si, Ge, CaF ₂ , MgF ₂ , ZnSe, Si ₃ N ₄ , and TaSi _2. A manufacturing method of the semiconductor laser device according to the above. 3. The method according to claim 1, wherein the second semiconductor material or the dielectric material is deposited by an electron beam evaporation method. 4. The method according to claim 1, wherein the thermal annealing is performed using As or P
4. The method for manufacturing a semiconductor laser device according to claim 1, wherein the method is performed while irradiating a molecular beam or radical hydrogen. 5. A method of manufacturing a semiconductor laser device having a pair of cavity facets, wherein at least one cavity facet is formed by cleavage in an ultra-high vacuum, and the cavity facet is formed on the cavity facet. Deposit a second semiconductor material or a dielectric material different from the first semiconductor material to be composed,
Thereafter, a plasma processing is performed on the end face of the resonator, and a method of manufacturing a semiconductor laser device. 6. The method according to claim 5, wherein the second semiconductor material or the dielectric material is any one of Si, Ge, CaF ₂ , MgF ₂ , ZnSe, Si ₃ N ₄ and TaSi _2. A manufacturing method of the semiconductor laser device according to the above. 7. The method for manufacturing a semiconductor laser device according to claim 5, wherein the second semiconductor material or the dielectric material is deposited by an electron beam evaporation method. 8. The method according to claim 5, wherein the plasma processing is an Ar plasma processing.