JP3178601B2 - TEM cell measuring jig for LSI tester - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a TEM for immunity test for radiation from LSI or noise of LSI.
The present invention relates to a jig for performing simple measurement when an LSI is driven by an LSI tester in an evaluation method using a cell.

[0002]

2. Description of the Related Art In recent years, a method using a TEM cell has been studied as a simple method of evaluating radiation from an LSI (for example, Tsuchiya, Akino, Shinohara, "Study on interference sources of electromagnetic noise radiated from digital IC" 1997). IEICE Communications Society Conference B-4-17, p217, 1997). The TEM cell is
This is a device that generates a TEM mode electromagnetic wave in which there is a surface where an electric field and a magnetic field are created in a direction perpendicular to the traveling direction of the electromagnetic wave. In the above method, the TEM cell
Instead of generating M-mode electromagnetic waves, the electromagnetic noise radiated from the LSI inside the TEM cell is converted to TE-mode electromagnetic noise.
The noise is captured by the M cell and detected by a noise evaluation unit provided outside the TEM cell.

The above method will be described with reference to FIG. FIG.
Is a longitudinal sectional view of a TEM cell. As shown in FIG.
The TEM is formed in the opening 42 provided in the bottom 41 of the EM cell 4.
The cell evaluation board 5 is installed, and the socket 2 and the LSI 3 are installed on the upper surface of the TEM cell evaluation board 5, that is, the surface 51 facing the inside 43 of the TEM cell 4. L to be evaluated
SI3 is arranged in socket 2.

The inner surface 51 of the TEM cell evaluation board 5 facing the inside 43 of the TEM cell 4 is free from peripheral circuits and printed circuit board patterns necessary for the operation of the LSI 3 to be evaluated. Except for the terminal part of the socket to be connected, it is covered with metal on one side. Therefore, a peripheral circuit and a power supply necessary for the operation of the LSI 3 to be evaluated are connected from the outer surface 52 of the TEM cell evaluation board 5 or the outside, and a power supply and a clock necessary for the operation of the LSI 3 are supplied from the outside. Have been. Also, T
The peripheral portion of the inner side surface 51 of the EM cell evaluation substrate 5 is in contact with the metal portion of the opening 42 of the bottom wall 41 of the TEM cell 4 all around so as to maintain electrical conduction. At an intermediate position in the height direction of the TEM cell 4, a partition wall 44 is provided extending in the horizontal direction so as to face the bottom wall 41.

The peripheral portion of the inner side surface 51 of the TEM cell evaluation substrate 5 is configured so that no step is formed between itself and the bottom wall 41 of the TEM cell 4. This is because the bottom wall 41 of the TEM cell 4 has an opening 42 so as not to disturb the electric field generated between the partition 44 and the TEM cell evaluation substrate 5 or between the partition 44 and the bottom wall 41. This is because the surface must be as uniform as possible.

A voltage appears at an output terminal 45 of the TEM cell 4 due to an electric field E generated between the partition wall 44 and the bottom wall 41 or a magnetic field H generated in a depth direction (a direction orthogonal to the electric field E). The voltage appearing at the output terminal 45 of the TEM cell 4 is amplified by a preamplifier 61 included in the noise evaluation unit 6 and input to a spectrum analyzer 62, whereby noise is evaluated.

The advantage of using the TEM cell 4 is that the noise evaluation section 6 can observe noise only from the LSI 3 to be evaluated, which is a radiation noise source existing inside the TEM cell 4. This is because the TEM cell evaluation board 5 on which the socket 2 is mounted is the bottom wall 41 of the TEM cell 4.
This is because all the openings at the bottom of the TEM cell 4 are closed by connecting to the bottom wall 41 while the opening 42 is closed. And peripheral circuits and L
Since noise radiated from the SI tester is no longer directly received by the TEM cell 4, highly reliable evaluation can be performed.

On the other hand, the immunity of LSI
A method using an EM cell has been reported (for example,
A.Angel, H.Astrain, J.Cagle; "A TEM-Cell Based Metho
d for Radiative Susceptibility Characterization of
Low-Power Microcontrollers "Proc. Of IEEE Int. Sy
mp. on EMC '98 Denver, pp.76-81, 1996). In the above method, as shown in FIG. 10, the noise signal generated by the noise generator 7 is generated as radiation noise inside the TEM cell 4 using the TEM cell 4, and this radiation noise is added to L
The immunity of LSI3 to be evaluated is examined by exposing SI3. Also in this case, the TEM cell evaluation substrate 5
Inside surface 51 facing the inside of the TEM cell 4
Only the socket 2 and the LSI 3 to be evaluated are arranged, and patterns, peripheral circuits, power supplies, and the like are connected from the outside surface 52 or the outside, and the power supply and clock required for the operation of the LSI 3 to be evaluated are connected to the outside surface 52. Or it is supplied from outside. This is to avoid the influence of the electromagnetic field generated in the inside 43 of the TEM cell 4 by the wiring pattern and other peripheral components. The noise generator 7 amplifies the noise signal input from the signal generator 71 with the power amplifier 72 and inputs the noise signal to the input terminal 46 of the TEM cell 4 via the power monitor 73 that measures the power of the noise signal. It is configured. The noise signal input to the input terminal 46 is radiated from the partition 44 toward the LSI 3 to be evaluated.

When the upper limit of the measurement is considered up to 1 GHz, the size of the TEM cell 4 is also limited and its width is about 15 cm.
The size of the EM cell evaluation substrate 5 is approximately 1 in every product.
It is about 0 cm square. The TEM cell evaluation substrate 5 is configured by using a double-sided or multi-layer substrate in the same manner as the case of measuring the radiation noise described with reference to FIG.
An inner side surface 51 facing the inside 43 of the M cell 4 is entirely covered with metal except for a portion connected to a terminal portion of the LSI 3. Further, the peripheral portion of the inner side surface 51 of the TEM cell evaluation substrate 5 is in contact with the metal portion of the opening 42 of the bottom wall 41 of the TEM cell 4 all around so as to maintain electrical continuity. The periphery of the inner side surface 51 of the evaluation board 5 is T
It is configured such that there is no step between the bottom wall 41 of the EM cell 4.

In addition, the EMC of an LSI using a TEM cell
In the measurement, a method of performing the operation of the LSI with an LSI tester is described in Japanese Patent Application No. 10-170947 “Method and apparatus for evaluating immunity of electronic circuit elements and LSI tester”. The above method evaluates the noise immunity of the LSI 3 to be evaluated using the same environment as the LSI function test using the LSI tester. FIG. 11 shows the basic configuration. The LSI tester 8 applies and inputs the input pattern 82 generated by the pattern generation unit 81 to the LSI 3 to be evaluated via the driver 83. Then, the output pattern output from the output terminal of the LSI 3 to be evaluated is input to the comparator 84 and the comparator 8
4 is configured so that the correct pattern 85 generated by the pattern generation unit 81 is input to the comparator 4 and the output pattern is compared with the correct pattern 85 by the comparator 84 to compare the output pattern with the correct pattern 85 so as to determine the quality of the LSI 3. General. In the case of noise immunity evaluation, a synchronization control unit 86 for controlling the noise generator 7 is added to the LSI tester 8 having such a general configuration. Then, if there is no noise, the LSI 3 that normally operates is set as an evaluation target, and the synchronization control unit 86 takes the timing with the input pattern 82 to take the noise signal generated by the noise generation unit 7 as radiation noise in the inside 43 of the TEM cell 4. It is applied to the LSI 3 to be evaluated. With the noise gradually increased, the output of the comparator 84 becomes the correct pattern 85
The noise voltage when the value does not match with the value becomes noise immunity. Conventionally, when this method is actually performed, a TEM cell evaluation substrate 5 of about 10 cm square is set on the evaluation substrate 87, and the TEM cell 4 is attached so as to cover the TEM cell evaluation substrate 5 for measurement. In this case, the mounting surface of the TEM cell evaluation board 5, that is, the inner side surface 51 facing the inside 43 of the TEM cell 4 is entirely covered with metal except for the portion connected to the terminal portion of the LSI 3. A TEM cell evaluation substrate was used.

[0011]

However, as described above, in order to measure the noise immunity of an LSI,
The inner side surface 51 facing the inside 43 of the TEM cell 4 is the LSI 3
When using a TEM cell evaluation substrate configured to be entirely covered with metal except for a portion connected to the terminal portion of
Every time the LSI to be measured is changed, the evaluation board 84 on which the TEM cell evaluation board 5 is mounted must be re-created.
Noise immunity evaluation work is cumbersome and labor intensive. In addition, the same problem arises in that, when performing a radiation noise evaluation operation using a TEM cell, the evaluation substrate 84 on which the TEM cell evaluation substrate 5 is mounted must be recreated every time the LSI to be measured is changed. The present invention has been made in view of the above circumstances, and it is an object of the present invention to provide a TEM cell method measuring jig for an LSI tester that can easily evaluate noise immunity and radiation noise of an LSI. .

[0012]

According to the present invention, there is provided an LSI tester which holds an evaluation LSI connected to a socket provided on an evaluation board in an accommodation space of a TEM cell.
An EM cell measuring jig, wherein the TEM cell is formed so as to partition the housing space inside by a wall, and the wall is provided with an opening.
The cell method measurement jig has a metal frame surrounding the socket provided on the evaluation board, and a connection surface of the socket connected to the evaluation LSI is provided in the accommodation space above the frame. A fitting portion that fits in the opening is formed in a state where the opening is formed, and the frame and the TEM cell substantially maintain a conductive state in a frequency band necessary for evaluating the evaluation LSI. It is characterized by comprising.

Therefore, the frame and the TEM cell have the same potential in a state where the fitting portion of the frame is fitted in the opening of the TEM cell. It is possible to perform noise immunity evaluation by radiating noise, and to evaluate radiation noise by measuring the noise radiated from the evaluation LSI using a TEM cell. Therefore, the noise evaluation work of the LSI can be easily performed only by replacing the evaluation LSI connected to the socket, and it is not necessary to create an evaluation board for each evaluation LSI unlike the conventional case.

[0014]

Next, an embodiment of the present invention will be described in detail with reference to the drawings. FIG. 1 is an overall configuration diagram showing a TEM cell method measuring jig for an LSI tester according to a first embodiment of the present invention, and FIG. 2 is a TEM for an LSI tester of FIG.
FIG. 3 is a configuration diagram showing details of the cell method measuring jig, and FIG. 3 is a perspective view showing a state where the TEM cell method measuring jig for the LSI tester shown in FIG. 1 is removed.

First, a TE for an LSI tester will be described with reference to FIG.
The schematic configuration of the M-cell method measuring jig will be described. FIG. 1 shows a state in which the measurement can be performed by covering the evaluation substrate 5 with the TEM cell 4. In the TEM cell 4, an accommodation space 43 is formed by a wall portion in the same manner as in the related art, and the partition wall 44 extends in the horizontal direction at a middle position in the height direction of the TEM cell 4 so that the partition wall 44 faces the bottom wall 41. It is provided. Usually, evaluation board 5
Is mounted with a socket 2 for mounting an LSI to be evaluated. The size of the socket 2 is small,
It is several cm square and large, and is almost a quadrangle of about 6 to 7 cm square in many cases. On the other hand, the upper frequency limit is 1 GHz
Of the TEM cell 4 is a square having a size of about 10 cm square for mounting the substrate for measurement. Therefore, conventionally,
When the TEM cell 4 is placed over the socket 2, a gap of several cm generally occurs between the outer periphery of the socket 2 and the opening of the TEM cell 4. For this reason, the electric field distribution near the LSI to be evaluated is largely disturbed by the gap, that is, the portion of the TEM cell 4 where there is no metal at the bottom. Therefore,
In the present invention, the metal frame 1 (corresponding to the frame in the claims), which is a TEM cell measuring jig for an LSI tester, is connected to the socket 2 and the bottom wall 41 of the TEM cell 4 (corresponding to the walls in the claims). ) Is arranged to fill the gap of the opening 42.

As shown in FIG. 2, generally, a step 42A is provided in the opening 42 of the TEM cell 4 so that good electrical contact with the TEM cell 4 can be maintained. Therefore, in consideration of the step difference, the metal frame 1 does not have a step between the wall surface 41A of the bottom wall 41 of the TEM cell 4 and the upper surface 1A1 of the metal frame 1. That is, the metal frame 1 is provided with a housing portion 1B at a substantially central portion thereof for housing the socket 2 with no gap from the outer periphery thereof. That is, the metal frame 1 is provided so as to surround the socket 2 provided on the evaluation board 5. The metal frame 1 has an LS for evaluation.
The connection surface 21 of the socket 2 connected to I3 is accommodated in the accommodation space 43.
A fitting portion 1A that fits into the opening portion 42 in a state where it faces is formed. When the fitting portion 1A of the metal frame 1 is fitted into the opening 42, there is no gap between the opening 42 and the metal frame 1. The connection surface 21 of the socket 2 is provided with an unillustrated pin (corresponding to a terminal portion in the claims) connected to a terminal of the evaluation LSI.

Then, the fitting portion 1A of the metal frame 1 is
2 and the upper surface 1A1 of the fitting portion 1A and T
Wall surface 41A of bottom wall 41 around opening 42 of EM cell 4
Are configured to be on the same plane. Also, the fitting portion 1A of the metal frame 1 has conductivity, and the metal frame 1 and the TEM cell 2 are evaluated by the contact between the fitting portion 1A and the opening 42 of the TEM cell 4. It is configured to maintain a substantially conductive state in a frequency band necessary for evaluating the LSI for use.

The socket 2 comprises a pedestal 22 and a lid 23.
It is composed of The pedestal 22 is provided with a connection surface 21 at an upper part, and a lower part is mounted on the evaluation board 5. Lid 2
Numeral 3 is configured to hold the evaluation LSI 3 between the pedestal 22 and the connection surface 21. And
With the fitting portion 1A fitted in the opening 42, the connection surface 2
1 is configured to be flush with the upper surface 1A1 of the fitting portion 1A and the wall surface 41A of the bottom wall 41 around the opening 42.

FIG. 12 shows, for comparison with the first embodiment, the TEM cell 4 is directly used for the evaluation LSI 3 without using the metal frame 1 which is a TEM cell method measuring jig for an LSI tester of the present invention. 3 schematically shows the disturbance of the electric field distribution when overlaid. The electric field in the vicinity of the socket 2 is large toward the surrounding metal, that is, toward the edge of the opening 42 of the TEM cell 4, and the direction of the electric field is changed to the evaluation LSI.
Not perpendicular to 5 That is, a TEM wave cannot be formed, which causes a large error in measurement.

On the other hand, according to the configuration of the above-described embodiment, the upper surface 1A1 of the fitting portion 1A and the TEM cell in a state where the fitting portion 1A of the metal frame 1 is fitted into the opening 42. 4
The wall surface 41A of the bottom wall 41 around the opening portion 42 and the connection surface 21 of the pedestal 22 of the socket 2 are flush with each other,
The metal frame 1 and the TEM cell 4 have the same potential. Therefore, unlike the configuration of FIG. 12 described above, the bending of the electric field around the socket 2 can be suppressed, and the disturbance of the electromagnetic field can be suppressed low. Therefore, the TEM wave can be formed correctly with the direction of the electric field being perpendicular to the evaluation LSI 5, and measurement errors can be reduced.

FIG. 3 shows the TEM cell 4 and the metal frame 1 removed from the evaluation board 5. Thus, the metal frame 1 is configured to be detachable from the socket 2, the TEM cell 4, and the evaluation board 5. Therefore, a measurement environment can be easily constructed. That is, the normal LS
In the case of the function test using the I tester, the test can be performed with the TEM cell 4 and the metal frame 1 removed from the evaluation substrate 5. In the case of evaluation using the TEM cell 4, the TEM cell can be easily covered by attaching the metal frame 1 to the evaluation substrate 5 in advance. Then, the procedure of replacing the LSI to be evaluated, covering the TEM cell, and performing the evaluation may be repeated.

FIG. 3 shows an opening 4 of the TEM cell 4.
2 is a square, and the fitting portion 1 of the metal frame 1
A shows an example in which a square is formed so as to fit into the opening 42. Therefore, in the case of this example, the metal frame 1 fitted into the opening 42 of the TEM cell 4
Of the fitting portion 1A can be set in different directions by 90 degrees. However, the shapes of the fitting portion 1A of the metal frame 1 and the opening 42 of the TEM cell 4 are not limited to squares, but may be polygonal as shown below.

FIG. 4 is a view for explaining a modification of the first embodiment. FIG. 4 (A) is a bottom view of the TEM cell 4 and FIG. 4 (B) is a plan view of the metal frame 1. FIG. 4C is a side view of the metal frame 1. FIG. 4 shows a fitting portion 1A of the metal frame 1.
And a case where the shape of the opening 42 of the TEM cell 4 is a regular octagon. As shown in FIG. 4 (A), a metal conversion flange 45 that is electrically connected to the TEM cell 4 by being in contact with the TEM cell 4 is formed in the opening 42 of the TEM cell 4 so as to be well connected to the TEM cell 4. It is integrally attached to. That is, the metal frame 1, the TEM cell 4, and the conversion flange 45 are configured to substantially maintain a conductive state in a frequency band necessary for evaluating the evaluation LSI.

The conversion flange 45 has a regular octagonal opening 45A. The fitting portion 1A provided on the upper part of the metal frame 1 is configured to be a regular octagon that fits into the opening 45A. Needless to say, the conversion flange 45 is configured so that no gap is formed between the conversion flange 45 and the opening 42. Therefore, according to the configuration of FIG.
Corresponds to the opening of the TEM cell 4, and this opening 4
The position of the fitting portion 1A of the metal frame 1 fitted to 5A can be set in different directions by 45 degrees. Thus, T
If the position of the fitting portion 1A of the metal frame 1 fitted to the opening of the EM cell 4 can be set in different directions by a predetermined angle, the direction dependence of the maximum value of the noise emission from the evaluation LSI 3 This is convenient when the direction of the evaluation LSI 3 is rotated by a predetermined angle in order to measure the measurement.

The shape of the opening of the TEM cell 4 and the fitting portion 1A of the metal frame 1 fitted into this opening is not limited to the above-described square and regular octagon, but may be any shape. It can be square. That is, if the shape of the opening 42 of the TEM cell 4 and the fitting portion 1A of the metal frame 1 fitted into the opening 42 is a regular n-gon (n is an integer of 3 or more),
The position of the fitting portion 1A of the metal frame 1 fitted to the opening 42 of the TEM cell 4 can be set in different directions by 360 / n degrees. Also, in FIG. 4, a regular n-sided opening 45A is provided.
The conversion flange 45 provided with the opening 42 of the TEM cell 4
Although the example in which the fitting portion 1A of the metal frame 1 is configured to be fitted to the opening portion 45A is shown, the opening portion 42 itself of the TEM cell 4 may be formed in a regular n-sided shape. Of course.

In the first embodiment described above, FIG.
As compared with the configuration shown in FIG. 2, the disturbance of the electric field is temporarily suppressed. However, as shown in FIG. 2, the socket 2 is generally sufficiently larger than the evaluation LSI 3 and is made of a nonmetallic material such as a resin. A non-metallic space exists in the vicinity. Therefore, as shown in FIG. 2, slight electromagnetic field disturbance still occurs in the socket 2 portion, and the uniformity of the electric field is not perfect as compared with the case where a dedicated TEM cell evaluation board is used. I can't say. Second and third embodiments capable of further suppressing the disturbance of the electromagnetic field at the socket 2 will be described below.

FIG. 5 shows an LSI according to a second embodiment of the present invention.
FIG. 6 is an explanatory view showing a configuration of a main part of a test jig for a TEM cell method for a tester. FIG. 6 is a diagram showing a TE for an LSI tester according to a second embodiment.
FIG. 1 is an overall configuration diagram of an M-cell method measuring jig. In the second embodiment, as shown in FIG.
The metal thin plate 11 is disposed on the connection surface 21 on the upper side.
The thin metal plate 11 has substantially the same outer shape as the pedestal 22 of the socket 2 and is made of, for example, a 0.1 mm thick metal plate. The metal thin plate 11 has an opening 1 only at a position corresponding to a pin row (corresponding to a terminal portion in the claims) composed of the pins 22A of the pedestal 22 in contact with the terminal 31 of the evaluation LSI 3.
1A is provided, and the opening 81 is provided so as to cover the connection surface 21 of the pedestal 22 so as to correspond to the position of the pin row. Originally pedestal 22 and lid 2
Since there is usually a gap of about 0.5 mm between the metal sheet 3 and the pin row of the connection surface 21 of the pedestal 22 except for the pin row, if only the pin row portion is avoided by the opening 11A. Can be covered. That is, the case of FIG. 5 shows a case where a package having terminals arranged on four sides called QFP is used as the LSI 3 to be measured, so that four pin arrays corresponding to each side are formed on the connection surface 21 of the pedestal 22. An opening 11A is provided in the metal thin plate 11 only for the four pin rows.

As shown in FIG. 6, the metal thin plate 11 is placed on the connection surface 21 of the pedestal 22 of the socket 2 and
The upper surface 1A1 of the fitting surface 1A of the metal frame 1 and the wall surface 41A of the bottom wall 41 around the opening 42 of the TEM cell 4 are configured to be flush with each other. That is, unlike the case of the first embodiment, the connection surface 21 of the pedestal 22 of the socket 2 has an opening 42 corresponding to the thickness of the thin metal plate 11.
Is configured to be located below the wall surface 41A of the bottom wall 41 surrounding the bottom wall 41. The outer periphery of the thin metal plate 11 is connected to the fitting portion 1A of the metal frame 1 so that the metal frame 1 and the thin metal plate 11 are electrically connected to each other. That is, the metal frame 1, the TEM cell 4, and the thin metal plate are configured to substantially maintain a conductive state in a frequency band necessary for evaluating the evaluation LSI.

According to the above configuration, almost no non-metal space exists near the evaluation LSI 3 and below the evaluation LSI 3. For this reason, as shown in FIG. 6, the disturbance of the electric field is almost only the disturbance of the LSI 3 to be evaluated, the disturbance of the electromagnetic field is almost completely suppressed at the socket 2, and a dedicated TEM cell evaluation board is used. It is not much different from the case. The opening 11A of the thin metal plate 11
Is ideal as the area is smaller, for example, pedestal 2
A small hole corresponding to each of the pins 22A may be used. However, in reality, the opening 11A of the metal sheet 11
It is not practical because it takes time and effort to align the holes with small holes corresponding to the pins 22A of the pedestal 22.

FIG. 7 shows an LSI according to a third embodiment of the present invention.
FIG. 8 is an explanatory view showing a configuration of a main part of a test jig for a TEM cell method for a tester, and FIG. 8 shows a TE for an LSI tester according to a third embodiment.
FIG. 1 is an overall configuration diagram of an M-cell method measuring jig. In the third embodiment, the metal sheet 1 shown in FIG. 6 of the second embodiment is used.
1 is further extended to the outside of the socket 2 to further improve the electrical contact between the thin metal plate 11 and the upper surface 1A1 of the fitting portion 1A of the metal frame 1. That is, the outer periphery of the metal thin plate 11 extends to the outer periphery of the upper surface 1A1 of the fitting portion 1A, and the metal thin plate 11 overlaps the upper surface 1A1 of the fitting portion 1A.
It is configured to be electrically connected to A1.

In the case of the third embodiment, the metal sheet 1
1 is the bottom wall 4 around the opening 42 facing the accommodation space 43.
It is configured so as to be flush with the first wall surface 41A.
That is, unlike the first and second embodiments, the connection surface 21 of the pedestal 22 and the upper surface 1A1 of the fitting portion 1A are configured to be the same surface.
The upper surface 1A1 of the fitting portion 1A is configured to be located below the wall surface 41A of the bottom wall 41 around the opening 42 by an amount corresponding to the thickness of the thin metal plate 11. According to this configuration, since the metal thin plate 11 is electrically connected to the upper surface 1A1 at a portion overlapping the upper surface 1A1 of the fitting portion 1A, the connected area is increased, and the metal thin plate 11 is larger than the case of FIGS. Upper surface 1 of fitting portion 1A between thin metal plate 11 and metal frame 1
The electrical contact with A1 becomes better, and factors that disturb the electromagnetic field, such as the resistance of the contact portion, can be almost eliminated. Therefore, the disturbance of the electromagnetic field at the socket 2 can be further suppressed as compared with the case of the second embodiment.

As described in detail above, according to the TEM cell method jig for the LSI tester of the first to third embodiments,
Unlike the related art, the noise immunity evaluation operation using the TEM cell can be easily performed without creating the evaluation board for each evaluation LSI unlike the related art. Note that L
It goes without saying that the same effect can be obtained for the radiation noise evaluation of SI. Therefore, LS
The TEM cell method jig for the I tester can be commonly used for both noise immunity evaluation and radiated noise evaluation using a TEM cell, and an LSI that cannot perform these evaluations without using an LSI tester, for example, A
Most suitable for evaluation of SIC and memory.

[0033]

As described in detail above, the present invention relates to an LSI
What is claimed is: 1. A TEM cell measuring jig for holding an evaluation LSI connected to a socket provided on an evaluation substrate in a tester in a housing space of a TEM cell, wherein the TEM cell is provided inside the housing space by a wall portion. The wall is provided with an opening, and the TEM cell measuring jig has a metal frame surrounding a socket provided on an evaluation board, A fitting portion that fits into the opening is formed on an upper portion of the frame body with the connection surface of the socket connected to the evaluation LSI facing the housing space, and the frame body and the TEM cell are formed. The evaluation L
It is configured to maintain a substantially conductive state in a frequency band necessary for evaluating SI. Therefore, since the frame and the TEM cell have the same potential in a state where the fitting portion of the frame is fitted in the opening of the TEM cell, noise is radiated from the TEM cell to the evaluation LSI connected to the socket. To perform noise immunity evaluation or LS for evaluation.
It is possible to evaluate the radiation noise by measuring the noise radiated from I by a TEM cell. Therefore, it is possible to easily perform the LSI noise evaluation work simply by replacing the evaluation LSI connected to the socket,
Unlike the related art, there is an effect that it is not necessary to create an evaluation board for each evaluation LSI.

[Brief description of the drawings]

FIG. 1 is an overall configuration diagram showing a TEM cell method measuring jig for an LSI tester according to a first embodiment of the present invention.

FIG. 2 is a configuration diagram showing details of a TEM cell method measuring jig for an LSI tester in FIG. 1;

FIG. 3 is a perspective view showing a state where a TEM cell method measuring jig for an LSI tester shown in FIG. 1 is removed.

4A and 4B are diagrams showing a modification of the first embodiment, FIG. 4A is a bottom view of a TEM cell, FIG. 4B is a plan view of a metal frame, and FIG. It is a side view of a frame.

FIG. 5 shows a T for an LSI tester according to a second embodiment of the present invention.
FIG. 3 is a configuration diagram showing a metal thin plate as an EM cell method measuring jig and a method of installing the metal thin plate.

6 is a cross-sectional view of a measurement system using a metal thin plate as the TEM cell method measurement jig for an LSI tester shown in FIG.

FIG. 7 shows a T for an LSI tester according to a second embodiment of the present invention.
This shows an application example of the EM cell method measurement jig

8 is a sectional view of a measurement system when an application example of the TEM cell method measuring jig for an LSI tester shown in FIG. 7 is used.

FIG. 9 is a configuration diagram showing an example of a measurement system when performing radiation noise evaluation using a TEM cell in a conventional example.

FIG. 10 is a configuration diagram illustrating an example of a measurement system when performing noise immunity evaluation using a TEM cell in a conventional example.

FIG. 11 is a configuration diagram in a case where immunity is evaluated using a TEM cell on an LSI tester in a conventional example.

FIG. 12 is an explanatory diagram for explaining a difference between a case where noise immunity is evaluated using a TEM cell on an LSI tester in a conventional example and the present invention.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Metal frame (frame body), 1A ... Fitting part, 2 ... Socket, 21 ... Connection surface, 22 ... Pedestal, 3 ... Evaluation LS
I, 4, TEM cell, 41, bottom (wall), 42
... Opening part, 5 ... Evaluation board, 11 ... Metal thin plate.

──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-2-203281 (JP, A) JP-A-2-45470 (JP, U) A TEM-Cell Based Method for Radiative Sustainability Characteristic of Low-Power Microcontrollers, Proc. of IEEE Int. Symp. on EMC'98 Denver, pp. 76-81, 1996 (58) Fields investigated (Int. Cl. ⁷ , DB name) G01R 31/30 G01R 29/08 G01R 29/10 G01R 31/00

Claims (12)

(57) [Claims] 1. A TEM cell method measuring jig for holding an evaluation LSI connected to a socket provided on an evaluation board in an LSI tester in a housing space of a TEM cell, wherein the TEM cell has a wall portion. The housing is formed so as to partition the housing space therein, and the wall is provided with an opening. The jig for measuring the TEM cell method is a metal frame surrounding a socket provided on an evaluation board. A fitting portion that fits into the opening in a state where a connection surface of the socket that connects to the evaluation LSI faces the housing space, the fitting portion being formed on an upper portion of the frame body; The TE for an LSI tester according to claim 1, wherein the body and the TEM cell are configured to substantially maintain a conductive state in a frequency band necessary for evaluating the evaluation LSI.
M-cell method measurement jig. 2. The method according to claim 1, wherein the fitting portion has conductivity, and conduction of the frame and the TEM cell is maintained by connecting the fitting portion and the opening. 2. The jig for measuring a TEM cell method for an LSI tester according to 1. 3. An upper surface of the fitting portion and a wall surface of the wall around the opening in a state where the fitting portion is fitted in the opening. 3. The T for an LSI tester according to claim 1, wherein
EM cell method measurement jig. 4. The socket includes a pedestal provided with the connection surface at an upper portion and a lower portion mounted on the evaluation board, and the connection surface is provided with the fitting portion fitted into the opening. 4. The TEM cell method measuring jig for an LSI tester according to claim 3, wherein an upper surface of said fitting portion and a wall surface of said wall portion around said opening are formed in the same plane. 5. The socket has an upper surface provided with the connection surface and a lower portion provided with a pedestal mounted on the evaluation board, and a metal sheet is disposed on the connection surface portion so as to cover the connection surface portion. And a surface facing the housing space of the thin metal plate is a top surface of the fitting portion and a wall surface of the wall around the opening in a state where the fitting portion is fitted to the opening. And the metal thin plate and the frame are configured to substantially maintain a conductive state in a frequency band necessary for evaluating the evaluation LSI. The TE for an LSI tester according to claim 3.
M-cell method measurement jig. 6. The socket has an upper surface provided with the connection surface and a lower portion provided with a pedestal mounted on the evaluation board, and a thin metal plate is disposed on the connection surface portion so as to cover the connection surface portion. The metal sheet is provided such that its outer periphery extends to the outer periphery of the upper surface of the fitting portion and is electrically connected to the upper surface of the fitting portion at a portion overlapping the upper surface of the fitting portion. In a state where the fitting portion is fitted in the opening, the surface of the thin metal plate facing the accommodation space is configured to be flush with the wall surface of the wall around the opening. 3. The LSI according to claim 1, wherein
TEM cell method measuring jig for tester. 7. The connection surface is provided with a terminal portion connected to a terminal of the evaluation LSI, and the thin metal plate is provided on a portion of the connection surface excluding the terminal portion. 7. The T for an LSI tester according to claim 5, wherein
EM cell method measurement jig. 8. A frame according to claim 1, wherein said frame is provided with an accommodating portion for accommodating said socket.
4. The jig for measuring a TEM cell method for an LSI tester according to claim 1. 9. The jig for measuring a TEM cell method for an LSI tester according to claim 8, wherein said housing portion is provided at a substantially central portion of said frame. 10. The frame according to claim 1, wherein the frame is detachably attached to the opening.
4. The jig for measuring a TEM cell method for an LSI tester according to claim 1. 11. The opening portion is a regular n-gon in plan view (n is 3
11. The jig for measuring a TEM cell method for an LSI tester according to claim 10, wherein the jig is configured to satisfy the above natural number. 12. The TEM cell method for an LSI tester according to claim 1, wherein the frame is detachably provided to the evaluation board and the socket. jig.