JP3174796B2 - Charged particle beam apparatus and control method thereof - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a charged particle beam apparatus and a control method thereof, and more particularly, to an electron beam exposure apparatus used in manufacturing a semiconductor device.

In recent years, finer patterns have been required for the manufacture of ICs.
It is required that a pattern be exposed at high speed with high accuracy and that the pattern be highly reliable.

There are many factors that determine the position accuracy of an electron beam exposure apparatus. Among them, the influence of heat generated by an electromagnetic deflection coil for deflecting an electron beam is a serious problem.

[0004]

2. Description of the Related Art A conventional charged particle beam apparatus and its control method will be described below with reference to the drawings. FIG. 10 is a configuration diagram of a controller for controlling a current flowing through a deflection coil and a heat compensation coil according to a conventional example. Here, the charged particle beam apparatus has been described by taking an electron beam exposure apparatus used for semiconductor manufacturing or the like as an example.

In an electron beam exposure apparatus, there are two methods of deflecting an electron beam, an electromagnetic deflection and an electrostatic deflection. In the case of large deflection, electromagnetic deflection is generally used. Electromagnetic deflection has a characteristic that the deflection speed is not so high, but can be largely deflected.

According to the deflection method, first, when a current is supplied to a deflection coil, a magnetic field is generated in a direction perpendicular to the optical axis direction to deflect the electron beam to a predetermined position on the substrate. Here, assuming that the current flowing through the coil is I and the resistance of the coil is R, the coil is I ² R
Generates heat. Due to the generation of heat, the coil and the object near the coil are warmed and expanded and contracted. When the deflection signal, that is, the deflection current I changes, the positions of the coil and the object in the vicinity of the coil also slightly change. As a result of the change in the position of the coil that deflects the electron beam, the position of the electron beam that reaches the substrate also changes. Alternatively, since the pole piece of the electron lens near the coil expands and contracts due to heat fluctuation, the convergence state of the electron beam changes, and the position of the electron beam reaching the semiconductor substrate to be exposed also changes.

In order to improve this, a control method using the following device has been proposed. The method will be described with reference to FIG. The operation of the apparatus is such that a binary signal of an exposure pattern is converted into an X-direction digital / analog converter (hereinafter D) by a central processing unit (hereinafter referred to as CPU) 4A and a pattern generator (hereinafter referred to as PG) 4B.
ACX) 4C, and are output to a Y-direction digital / analog converter (hereinafter referred to as DACY) 4D, and the signals are converted into analog signals by DACX4C and DACY4D, respectively. Based on the analog signal, an X-direction amplifier (hereinafter referred to as X-direction AMP) 4E and a Y-direction amplifier (hereinafter referred to as Y-direction AMP) 4F
The currents _IX and _IY are supplied to the directional deflection coils 1X and 1Y.

At this time, the deflection coils 1X, 1X,
Assuming that the resistances of 1Y are R _X and R _Y , the total sum of Joule heat generated by the deflection coil is I _X ² R _X + I _Y ² R _Y.

The Joule heat generated in this way increases with the passage of time and has the above-mentioned adverse effect. Therefore, in order to suppress the fluctuation of the generated Joule heat, the coil of the non-induction winding is placed near the deflection coil. (Hereinafter referred to as a heat compensation coil), and the current flowing through each coil is controlled so that the sum of the Joule heat generated by the deflection coil and the Joule heat generated by the heat compensation coil becomes a constant value.

[0010] Then, by suppressing the Joule heat within a certain range, it is possible to reduce the fluctuation of the heat,
It is possible to suppress the adverse effects due to heat fluctuation. Here, the current flowing through the thermal compensation coil and the resistance of the coil are defined as I _C and R _C , respectively.

Therefore, since the sum of the Joule heat generated by the deflection coils 1X and 1Y and the Joule heat generated by the heat compensation coils 3X and 3Y becomes a constant value, I _X ² R _X + I _Y ² R _Y + I _C ² R _C = A (A is a constant) holds.

[0012] Solving this equation for _{I C, I C = [(} 1 / R C) {A- (I X 2 R X + I Y 2 R Y)}] is ^1/2. Therefore, the current I _C thus obtained may be supplied to the thermal compensation coil at any time. However, at this time, R _X , R _Y
And R _C are calculated by taking constant values at normal temperature,
_IX and IY _always use the values at that time.

Further, the thermal compensation coil are provided two, since they are connected in series, the current flowing to both well common value I _C, two thermal compensation coil 3X, 3
In the above description, the combined resistance of Y is represented by _RC , and the calculation is simplified.

[0014] At this time, DACX4C, based on the analog signal from DACY4D, the above I _C is obtained by the arithmetic circuit 2, actually the X-direction thermal compensation coil 3X, Y
It is supplied to the directional heat compensation coil 3Y.

As described above, attempts have been made to make the heat generation of the deflection coils 1X and 1Y and the heat compensation coils 3X and 3Y constant.

[0016]

According to the conventional charged particle beam apparatus and its control method, the resistances R _X and R _{Y of} the deflection coil and the resistance R _C of the heat compensation coil are set to constant values, and the the current I _C flowing through the compensation coil was passed on the basis of the expression _{I C = [(1 / R} C) {A- (I X 2 R X + I Y 2 R Y)}] 1/2.

However, since the coil has the characteristic that it generates heat and its resistance value increases, R _x ,
R _Y and R _C are not constant values but increase slowly. For this reason, the conventional method of obtaining the current I _C based on the R _X , R _Y , and R _C cannot accurately control the heat generation of the coil to a constant value.

Therefore, there arises a problem that the position of the electron beam reaching the substrate is different from the intended position and does not reach the substrate accurately. Therefore, there has been a problem that the reliability of a semiconductor device formed by exposure with such an electron beam is reduced.

The present invention has been made in view of the problems of the conventional example, and suppresses the fluctuation of the Joule heat generated by the coil, and expands and contracts due to the heat fluctuation of the support of the charged particle lens. The convergence state of the charged particle beam changes, and the position of the charged particle beam reaching the semiconductor substrate to be irradiated is prevented from fluctuating as much as possible. It is an object of the present invention to provide a charged particle beam device capable of manufacturing a semiconductor device and a control method thereof.

[0020]

FIGS. 1 and 2 are principle diagrams (parts 1 and 2) of a charged particle beam apparatus according to the present invention, and FIGS. 3 and 4 are charged particle beams according to the present invention. Flowchart for explaining a control method of the apparatus (part 1, part 2)
It is. As shown in FIG. 1, a first charged particle beam apparatus according to the present invention comprises a deflecting unit 11 for deflecting a charged particle beam.
Heat compensating means 12 for compensating the heat generation state of the deflecting means 11
Control means 13 for controlling the heat generation state of the heat compensation means 12
And an auxiliary control means 14 for controlling the output of the control means 13, and the auxiliary control means 14 assists the control means 13 based on the heat generation state of the heat compensation means 12 and the deflection state of the deflection means 11. It is characterized by outputting a signal SS.

In the first charged particle beam apparatus according to the present invention, as shown in FIG. 1, the control means 13 controls the correction current ΔI _C or the control target amount I
The output of the current I _C supplied to the thermal compensation means 12 is controlled based on V + I _C V _C.

Further, in the first charged particle beam apparatus according to the present invention, as shown in FIG. 2A, the control assisting means 14 controls the current I flowing through the deflecting means 11 and the current applied to the deflecting means 11. The detected voltage V is detected at any time,
The first detecting means 14A for calculating the calculation amount IV of the current compensating means 12, and the current I _C flowing through the heat compensating means 12 and the voltage V _C applied to the heat compensating means 12 are detected at any time, and a second detecting means 14B for calculating an amount I _C V _C, the initialization control amount I, V and the amount of computation IV, correction for correcting the current I _C to be supplied to the thermal compensation unit 12 based on the I _C V _C Current ΔI
_{And C} calculating means for calculating _C.

Further, as shown in FIG. 2B, the second charged particle beam device according to the present invention has the first charged particle beam device according to the present invention.
In the charged particle beam device, and wherein said calculation means 14C calculates the operation amount of IV, I _C control target amount based on V _C calculates the current I _C to be supplied to the thermal compensation unit 12 IV + I _C V _C I do.

In a first control method of a charged particle beam apparatus according to the present invention, the deflecting means deflects the charged particle beam.
This is a method for controlling the heat compensating means 12 for compensating for the heat generation state of the heat generating means 11 while monitoring the heat generation state of the deflecting means 11 and the heat compensating means 12 as shown in the flowcharts of FIGS. , The correction current ΔI _C for controlling the heat generation state of the deflection means 11 and the heat compensation means 12 or the control target amount IV + I _C V
The output of the heat compensating means 12 is controlled based on _C.

That is, the first charged particle beam according to the present invention
In the control method of the game device, the flowchart of FIG.
As shown, in step P1, the deflection means 11 and the heat
Currents I, I flowing through the compensation means 12_CAnd the deflection means 11
Applied voltage V, voltage V applied to heat compensating means 12_CTo
At any time, detection processing is performed, and based on the detection processing in step P2.
The amount of calculation IV related to the deflection means 11 and the heat compensation means
Computational complexity I related to 12_CV _CAt any time, perform the calculation process and
In step P3, the correction current ΔI _CIncluding
Current I_C'With the following equation [1]:_C'= I_C+ ΔI_C= [1 / V_C] [A-IV] ... [1], wherein A is an optional deflection system of the charged particle beam apparatus.
Performs arithmetic processing using the control equation that gives the thermal equilibrium constant of
In step P4, the correction current ΔI_CCurrent I including _C′
It is characterized in that it is supplied to the heat compensating means 12 as needed.

A second charged particle beam apparatus according to the present invention
As shown in the flowchart of FIG.
At step P1, the current flows to the deflection means 11 and the heat compensation means 12.
Current I, I_CAnd the voltage applied to the deflection means 11
V, voltage V applied to the thermal compensation means 12_CAt any time
In step P2, a deflection operation is performed based on the detection processing.
Calculation amount IV related to stage 11 and calculation related to heat compensation means 12
Quantity I_CV_CAt any time, a calculation process is performed.
The current I flowing through the heat compensating means 12 based on the calculation process _CDecide
Control target amount IV + I_CV_CCalculation processing, and
In step P4, the control target amount IV + I_CV_CBased on the
Style I_C′ In the following equation [2]:_C'= [1 / V_C[A-IV] ... [2], where A is an optional deflection system of the charged particle beam apparatus.
Performs arithmetic processing using the control equation that gives the thermal equilibrium constant of
Current I_C′ Is supplied to the thermal compensation means 12 as needed.
And achieve the above object.

[0027]

According to the first charged particle beam apparatus of the present invention, as shown in FIG.
, Control means 13 and control auxiliary means 14.

For example, the charged particle beam is deflected by the deflecting means 11, the heating state of the deflecting means 11 is compensated by the heat compensating means 12, and the control auxiliary signal SS is controlled by the control means 13.
Correction current ΔI _C or control target amount IV + I _C V _C
On the basis that the output control of the current I _C to be supplied to the thermal compensation unit 12 is made, controlled heating conditions of thermal compensation unit 12, and is the output control of the control unit 13 by the control auxiliary means 14, thermal compensation A control auxiliary signal SS is output to the control means 13 based on the heat generation state of the means 12 and the deflection state of the deflection means 11.

In the first charged particle beam apparatus according to the present invention, as shown in FIG.
14 is a first detecting means 14A, a second detecting means 14B,
Computing means 14C.

For example, the current I flowing through the deflecting means 11 and the voltage V applied to the deflecting means 11 are detected at any time by the first detecting means 14A, and the calculation amount IV of the deflecting means 11 is calculated. means 14B computation amount I _C V _C of the current flowing through the thermal compensation unit 12 I _C and the voltage V _C applied to the heat compensating means 12 is detected at any time thermal compensation means 12 is calculated by initial by calculation means 14C setting the controlled variable I, V and the amount of computation IV, correction current [Delta] I _C to correct the current I _C to be supplied to the thermal compensation unit 12 based on the I _C V _C is calculated.

[0031] Therefore, the current I generated when the heat generation of the deflection means 11, thermal compensation means 12, I _C and the voltage V, the change of V _C, the amount of computation IV to momentarily change to a change in the I _C V _C it is possible to supply the current I _C as a control target amount IV + I _C V _C constant correspondingly.

Thus, the fluctuation of Joule heat generated by the coils used in the deflecting means 11 and the heat compensating means 12 is suppressed, and the convergence of the charged particle beam is caused by expansion and contraction due to the heat fluctuation of the support of the charged particle lens. The state can be prevented from changing, and the deflection position of the charged particle beam reaching the semiconductor substrate to be irradiated becomes accurate.

Further, as shown in FIG. 2B, the second charged particle beam device according to the present invention has the first charged particle beam device according to the present invention.
In the charged particle beam apparatus, the calculating means 14C is calculated the amount of computation IV, I _C control target amount based on V _C calculates the current I _C to be supplied to the thermal compensation unit 12 IV + I _C V _C.

[0034] Therefore, the current I generated when the heat generation of the deflection means 11, thermal compensation means 12, I _C and the voltage V, the change of V _C, the amount of computation IV to momentarily change to a change in the I _C V _C it is possible to supply the current I _C as a control target amount IV + I _C V _C constant correspondingly.

Thus, similarly to the first charged particle beam apparatus, fluctuations in the heat generation state of the deflecting means 11 and the heat compensating means 12 are suppressed, and expansion and contraction due to heat fluctuations of the support of the charged particle lens are caused. Thus, the convergence state of the charged particle beam can be prevented from changing, and the position of the charged particle beam reaching the semiconductor substrate to be irradiated becomes accurate.

In addition, since the deflecting means 11 and the control means 13 are not connected, the circuit configuration is somewhat simplified as compared with the first charged particle beam device. Further, according to the first control method of the charged particle beam device according to the present invention, the following FIG.
As shown in the flowchart of FIG. 4, a heat compensating means 12 for compensating for a heat generation state of a deflecting means 11 for deflecting a charged particle beam.
The deflection means 11 in step P1.
And a correction current Δ for controlling the heat generation state of the deflection means 11 and the heat compensation means 12 while monitoring the heat generation state of the heat compensation means 12.
Based on the I _C or control target amount IV + I _C V _C is the output control of the heat compensating means 12.

That is, in the first method for controlling the charged particle beam apparatus according to the present invention, as shown in the flowchart of FIG.
Current flowing through the 12 I, the voltage V applied to the I _C and the deflecting means 11, the voltage V _C applied to the thermal compensation unit 12 from time to time, and the detection processing, the deflecting means 11 on the basis of the detection process at step P2
And the operation amount I _C V of the heat compensating means 12.
_At any time, a calculation process of _{C is performed,} and a current I _C ′ including the correction current ΔI _C is calculated based on the calculation process in step P3 by the following equation [1], ie, I _C ′ = I _C + ΔI _C = [1/1 V _C ] [A-IV] (1) where A is an arithmetic operation using a control arithmetic expression that is an arbitrary thermal equilibrium constant of the deflection system of the charged particle beam device, and a correction current ΔI _{C is} obtained in step P4. and from time to time supplies a current I _C 'including a thermal compensation means 12.

For this reason, the deflecting means 11 and the heat compensating means 12
Currents I and I generated by heat_CAnd voltage V, V_CDue to changes in
Calculation amounts IV, I_CV_CAgainst changes in
Accordingly, the correction current ΔI_COnly the current I_CCan be changed from time to time
And the control target amount IV + I_CV _CTo keep the
Style I_CCan be supplied.

Thus, the fluctuation of the heat generation state of the deflecting means 11 and the heat compensating means 12 is suppressed, and the convergence state of the charged particle beam is caused by expansion and contraction due to the heat fluctuation of the electron lens and the support of the electromagnetic deflecting unit. Can be suppressed, and the position of the charged particle beam reaching the semiconductor substrate to be irradiated becomes accurate.

Therefore, for example, when the apparatus is an electron beam exposure apparatus, it is possible to improve the alignment accuracy, which greatly contributes to the improvement of the reliability of a semiconductor device manufactured using the apparatus. It is.

A second charged particle beam apparatus according to the present invention
According to the control method described in FIG.
Then, the flow goes to the deflection means 11 and the heat compensation means 12 in Step P1.
Current I, I_CV applied to the deflection means 11 and the heat compensation
Voltage applied to compensation means 12 _CPerforms detection processing at any time,
In step P2, an action related to the deflecting means 11 is performed based on the detection processing.
Operational amount IV and operation amount I related to the heat compensating means 12_CV_CSpear
Time, the calculation process is performed, and based on the calculation process in step P3.
Current I flowing through thermal compensation means 12_CControl target amount I for determining
V + I_CV_C, And in step P4, the control target
IV + I_CV_CCurrent I based on_C'In the following equation [2],
That is, I_C'= [1 / V_C[A-IV] ... [2], where A is an optional deflection system of the charged particle beam apparatus.
Performs arithmetic processing using the control equation that gives the thermal equilibrium constant of
Style I_C′ Is supplied to the thermal compensation means 12 as needed.
ing.

[0042] Therefore, the current I generated when the heat generation of the deflection means 11, thermal compensation means 12, I _C and the voltage V, the change of V _C, the amount of computation IV to momentarily change to a change in the I _C V _C it is possible to supply the current I _C as a control target amount IV + I _C V _C constant correspondingly.

As a result, similarly to the control method of the first charged particle beam apparatus of the present invention, the deflection means 11 and the heat compensation means 12 are provided.
The fluctuation of the Joule heat generated by the coil used in the system can be suppressed, and the convergence state of the charged particle beam can be prevented from changing due to expansion and contraction due to the heat fluctuation of the electron lens and the support of the electromagnetic deflection unit. The position of the charged particle beam reaching a certain semiconductor substrate becomes accurate.

Therefore, for example, when the apparatus is an electron beam exposure apparatus, it is possible to improve the alignment accuracy, which contributes to the improvement of the reliability of a semiconductor device manufactured using the apparatus. It is.

[0045]

Next, an embodiment of the present invention will be described with reference to the drawings. 5 to 9 are diagrams illustrating a charged particle beam device and a control method thereof according to an embodiment of the present invention. FIG. 5 is a configuration diagram of the charged particle beam device according to the first embodiment of the present invention.

(1) First Embodiment A charged particle beam apparatus according to a first embodiment of the present invention is an electron beam exposure apparatus for writing a desired pattern on a semiconductor substrate, as shown in FIG. The X-direction deflection coil 21
X, Y direction deflection coil 21Y, X direction heat compensation coil 23X,
It comprises a Y-direction heat compensation coil 23Y, a first detection unit 22, a second detection unit 24, an arithmetic processing unit 25, a heat compensation current control unit 26, and a deflection scanning control unit 27.

X direction deflection coil 21X, Y direction deflection coil
21Y deflects the electron beam in the X and Y directions on the semiconductor substrate, respectively, and is an embodiment of the deflecting means 11.

The X-direction heat compensation coil 23X and the Y-direction heat compensation coil 23Y are provided for the purpose of compensating for the heat generated by the energization of the X-direction deflection coil 21X and the Y-direction deflection coil 21Y, and keeping the heat generation constant. And the thermal compensation means 12
FIG.

The heat compensation current control unit 26 includes a first arithmetic circuit 26
A, the third amplifier (hereinafter, "amplifier" is collectively AMP
26B) and a fourth AMP 26C, and based on the corrected supply currents ΔI _CX and ΔI _CY , the X-direction thermal compensation coil 23X
, Current supplied to the Y-direction thermal compensation coil 23Y I _CX, Set I _CY, actually the X-direction thermal compensation coils 23X, a current I _CX in the Y-direction thermal compensation coil 23Y, and supplies the I _CY. The heat compensation current control unit 26 is an embodiment of the control unit 13.

That is, the first arithmetic circuit 26A supplies the corrected supply currents ΔI _CX and ΔI _CY to be supplied to the heat compensation coils 23X and 23Y.
And the currents I _CX , I flowing through the thermal compensation coils 23X, 23Y.
_CY is added, and currents I _CX ′ and I _CY ′ to be newly supplied are added.
Are output to the third AMP 26B and the fourth AMP 26C, respectively. Note that the currents I _CX ′, I _CY ′
Is an embodiment of the current I _C ′ including the correction current.

The third AMP 26B is provided with a first arithmetic circuit 26A.
The current I _CX is the result of the calculation is to supply to the X-direction thermal compensation coils 23X, fourth AMP26C is the current I _CY is a calculation result of the first arithmetic circuit 26A in the Y-direction thermal compensation coil 23Y Supply.

The first detecting section 22, the second detecting section 24, and the arithmetic processing section 25 constitute one embodiment of the control auxiliary means 14. Here, the first detector 22 includes a third multiplier 22A,
The fourth multiplier 22B detects the current and voltage supplied to the deflection coils 21X and 21Y, and calculates the amount of heat generated by the deflection coils 21X and 21Y. The first detection unit 22
Is an embodiment of the first detecting means 14A.

That is, the third multiplier 22A calculates the current I _Y supplied to the Y-direction deflection coil 21Y and the applied voltage V
_Y is detected, and the two are multiplied to calculate the heat value of the Y-direction deflection coil 21Y. Further, the fourth multiplier 22B has X
The current I _X supplied to the directional deflection coil 21X and the applied voltage V _X are detected, and the two are multiplied to obtain the X direction deflection coil 21X.
Is calculated.

The second detector 24 comprises a first multiplier 24A and a second multiplier 24B, detects currents and voltages supplied to the heat compensation coils 23X and 23Y, and detects the currents and voltages supplied to the heat compensation coils 23X and 23Y. twenty three
The calorific value of Y is calculated. The second detector 24 is an embodiment of the second detector 14B.

That is, the first multiplier 24A is provided with the heat in the X direction.
Current I supplied to compensation coil 23X _CX , Applied voltage
V_CXIs detected, and both are multiplied to obtain the X-direction thermal compensation coil 23X.
Heat value I_CXV_CXWhich is calculated and output to the arithmetic processing unit 25
It is. The fourth multiplier 24B is a Y-direction deflection coil.
Current I supplied to 23Y_CY , Applied voltage V_CYDetect
And multiplying the two by the heat value I of the Y-direction deflection coil 23Y._CYV
_CYIs calculated and output to the arithmetic processing unit 25.

The arithmetic processing section 25 is composed of a second arithmetic circuit 25A. In order to keep the calorific value of each coil constant, the correction supply for adjusting the current supplied to the heat compensating coils 23X and 23Y while changing it as needed. The currents ΔI _CX and ΔI _CY are calculated and output to the thermal compensation current control unit 26. The arithmetic processing section 25 is an example of the arithmetic means 14C, and the correction supply currents ΔI _CX and ΔI _CY are examples of the correction current ΔI _C.

The deflection scanning control unit 27 includes a central processing unit (hereinafter referred to as CPU) 27A, a pattern generator (hereinafter referred to as PG) 27B, an X-direction digital / analog converter (hereinafter referred to as DACX) 27C, and a Y-direction digital / analog converter ( (Hereinafter referred to as DACY) 27
D, a first AMP27E and a second AMP27F.

The deflection scanning control unit 27 controls the currents of the deflection coils 21X and 21Y when deflecting the electron beam to draw an exposure pattern at the time of electron beam exposure, and actually controls the deflection coils 21X and 21Y. 21Y.

That is, the CPU 27A performs the deflection scanning control.
The PG 27B controls the electronic part 27 itself.
Required to draw the exposure pattern during
Style I _X, I_YThe binary signal for controlling the
C, DACY27D.

DACX27C and DACY27D are PG27B
And convert the binary signal from
The signal is output to the first AMP 27E and the second AMP 27F.

The first AMP27E and the second AMP27F are D
Based on analog signals from ACX27C and DACY27D, X-direction deflection coils 21X and Y-direction deflection coils are respectively provided.
The currents I _X and I _Y are supplied to 21Y.

The charged particle beam device in this embodiment is a control device for controlling the current supplied to the deflection coils 21X and 21Y and the heat compensation coils 23X and 23Y of the deflector of the electron beam exposure device as shown in FIG. .

As shown in FIG. 6, the deflector is a part of the electron optical system of the electron beam exposure apparatus and deflects the electron beam irradiated on the semiconductor substrate. The electron beam incident from above is accelerated in the optical axis direction by the lens coil 31, is deflected in the X-axis direction on the semiconductor substrate by the X-direction deflection coil 21X, and is deflected in the Y-direction deflection coil.
It is deflected in the Y-axis direction by 21Y.

As a result, an arbitrary position on the semiconductor substrate 40 immediately below the deflector is irradiated with the electron beam.
Hereinafter, the control method of the charged particle beam device according to the present embodiment will be described while supplementing the operation of the device. FIG.
3 is a flowchart illustrating a control method of the charged particle beam device according to the first embodiment of the present invention. In this embodiment, only the thermal compensation of the deflection coil in the X direction will be described. For thermal compensation of the deflection coil in the Y direction, X
Since the control is the same as the direction control, the description is omitted.

First, in step P1 of FIG. 7, a current _IX is supplied to the X-direction deflection coil 21X. At this time, the current _IX is supplied by the deflection scanning control unit 27. That is, the CPU 27A, PG27B outputs a binarized signal for controlling the current supplied to the deflection coil required for drawing the exposure pattern to the DACX27C, and the DACX27C converts the binarized signal into an analog signal. Based on the analog signal, a current _IX is supplied from the first AMP 27E to the X-direction deflection coil 21X.

Next, based on the resistance R _X of the X-direction deflection coil 21X and the resistance R _CX of the X-direction heat compensation coil 23X at normal temperature, which are obtained in advance in step P2, the electric power is supplied to the X-direction heat compensation coil 23X. The current I _{CX is obtained} by the following equation: I _CX = {(1 / R _CX ) (A−I _X ² R _X )} ^1/2 (A is a constant determined by the device), and is actually supplied to the X-direction heat compensation coil 23X. I do.

At this time, the current I _{X is} output from the DACX 27C.
Is output to the first arithmetic circuit 26A. The first arithmetic circuit 26A calculates I _{CX such} that I _CX = {(1 / R _CX ) (A−I _X ² R _X )}, and the third AMP 26B supplies the current I _CX to the X-direction thermal compensation coil 23X. _CX is supplied.

Next, in step P3, the X-direction deflection coil
Detecting a current I _X flowing to 21X, and a voltage V _X applied thereto multiplied by the voltage V _X on the current I _X, X deflection coil
Calculating the calorific value I _X V _X of 21X.

At this time, the current I _X and the voltage V _X are detected by the fourth multiplier 22B, and the fourth multiplier 22B
Voltage V _X is multiplied by said current I _X by heating value I _X V _X of the X-direction deflection coil 21X is calculated.

[0070] Further, a current I _CX flowing in the X-direction thermal compensation coil 23X in step P4, detects the voltage V _CX applied thereto multiplied by the voltage V _CX on the current I _CX, X-direction thermal compensation coil 23X Calorific value I _CX V _CX is calculated.

At this time, the current I _CX and the voltage V _CX are detected by the first multiplier 24A, and the fourth multiplier 22B
Thus, the calorific value I _CX V _CX of the X-direction heat compensation coil 23X is calculated.

Next, at step P5, the X-direction deflection coil 21
In order to make the total sum of Joule heat generated by X and the X-direction heat compensation coil 23X constant, I _X V _X + (I _CX + ΔI _CX ) V _CX = A (A is a constant determined by the device) the calculating the _{ΔI ΔI CX = (1 / V} CX) obtained by solving for the _{CX (a-I X V X} ) -I CX consisting corrected supply current [Delta] I _CX. Here, the current flowing through the X-direction thermal compensation coil 23X is defined as I _CX → I _CX + ΔI _CX , because the current changes due to the heat generated by the X-direction thermal compensation coil 23X.

The current ΔI _CX corresponds to the fact that the heat generated by each coil changes its own resistance and the applied voltage fluctuates, so that the total heat generation of the coil fluctuates.
It acts as a current for modifying and changing the current supplied to the heat compensation coil 23X in order to keep the calorific value constant.

At this time, the first multiplier 24A and the fourth multiplier 24A
Calorific value I output from the heater 22B_XV _X, I_CXV_CXBased on
And the second arithmetic circuit 25A_CX= (1 /
V_CX) (AI_XV_X) -I_CXCorrection supply current ΔI_CX
Is calculated.

Next, in step P6, the current supplied to the X-direction heat compensation coil 23X is calculated from I _CX by the corrected supply current ΔI _CX.
And supply it to the X-direction thermal compensation coil 23X as a new supply current I _CX ′.

At this time, ΔI _CX is output from the second arithmetic circuit 25A to the first arithmetic circuit 26A, and the first arithmetic circuit 26A
As a result, ΔI _CX is added to I _CX , and a new current I _CX ′
Becomes The current I _CX ′ thus modified is applied to the fourth AM
It is supplied to the X-direction heat compensation coil 23X by P26C.

Further, in step P7, it is determined whether or not a series of operations has been completed. If the work can be finished (Yes), the work is finished and the work is continued (No)
Returns to step P3 and repeats the process again.

At this time, the judgment processing is performed by the heat compensation current control unit.
Made by 26. As described above, according to the charged particle beam apparatus according to the first embodiment of the present invention, as shown in FIG. 4, the first detection unit 22, the second detection unit 24, and the arithmetic processing unit 25 and a thermal compensation current control unit 26.

For example, the first detecting unit 22 uses the deflection coil.
Current I flowing through the 21X and 21Y_X, I _Y, Deflection coil 21
Voltage V applied to X and 21Y_X, V_YIs detected from time to time,
Heat value I of deflection coils 21X and 21Y_XV_X, I_YV_YIs calculated
Will be issued.

Further, the second detecting section 24 uses the heat compensating coil.
Current I flowing through the wires 23X and 23Y_CX, I _CYAnd the heat compensation carp
Voltage applied to the devices 23X and 23Y_CX, V_CYIs detected from time to time
And the heat value I of the heat compensation coils 23X and 23Y._CXV_CX, I_CYV
_CYIs calculated.

Further, the above-mentioned detection result is calculated by the arithmetic processing unit 25.
So that the total amount of heat generated by the coil is constant.
Supply current for correcting the current supplied to the coils 23X and 23Y
ΔI _CX, ΔI_CYIs calculated.

The currents I _CX and I _CY supplied to the thermal compensation coils 23X and 23Y are supplied by the thermal compensation current controller 26 while being changed as needed. Therefore, the deflection coils 21X,
21Y, changes in currents I _X , I _Y , I _CX , I _CY , and voltages V _X , V _Y , generated when the heat compensation coils 23X, 23Y generate heat.
Heat value I _{X that} fluctuates from time to time due to changes in V _CX and V _{CY
V X, I Y V Y,} I CX V CX, in response to the I _CY V _CY, current I _CX such that a constant sum of the calorific value of the coil, it is possible to supply the I _CY.

Thus, the fluctuation of Joule heat generated by the deflection coils 21X and 21Y and the heat coils 23X and 23Y is suppressed,
A change in the convergence state of the electron beam due to expansion or contraction due to thermal fluctuation of the pole piece of the lens coil or the like can be suppressed, and the position of the electron beam reaching the semiconductor substrate to be irradiated becomes accurate.

Further, the first charged particle bead according to the present invention
According to the control method of the remote control device, in step P2 of FIG.
Direction deflection coil 21X and X-direction heat compensation coil 23X
Current in the X-direction thermal compensation coil 23X
I_CXIs supplied to the X-direction deflection coil 21X in Step P3.
Flowing current I_X, Applied voltage V_XAt any time, and X
Heat value I of directional deflection coil 21X_XV_XAnd calculate
Current I flowing through the X-direction thermal compensation coil 23X at step P4_CX,mark
Applied voltage V _CXIs detected at any time, and the X-direction heat compensating coil 23 is detected.
Heat value I of X_CXV_CXIs calculated, and in step P5, ΔI_CX= (1 / V_CX) (AI_XV_X) -I_CX (A is a constant determined by the device)
Current ΔI_CXIs calculated, and in step P6, the X-direction heat compensation coil
Current I to be supplied to_CXWith ΔI_CXJust change
Corrected new supply current I_CX′ With the X-direction thermal compensation coil 23
X.

For this reason, the X-direction deflection coil 21X and the X-direction deflection coil 21X
Current I due to heat generation of heat compensation coil 23X_X, I_CXChanges and
Voltage V_X, V_CXChange, these calorific values I
_XV_X, I _CXV_CXEven if changes from moment to moment,
Current I that changes every moment_X, I_CXAnd voltage V_X, V_CXStrange
And the corresponding supply current ΔI_CXIs
The current I supplied to the X-direction heat compensation coil 23X._CXChange
Then, a new current I_CX′ To supply the coil
It is possible to keep the total calorific value constant.

As a result, fluctuations in the amount of heat generated are suppressed, and changes in the convergence state of the electron beam due to expansion and contraction due to heat fluctuations of the pole piece and the like of the lens coil can be suppressed.

Therefore, since the electron beam reaching the substrate reaches the intended position accurately, the alignment accuracy can be improved. Therefore, it greatly contributes to improving the reliability of the semiconductor device formed by such electron beam exposure.

(2) Second Embodiment A charged particle beam apparatus and a control method thereof according to a second embodiment of the present invention will be described below with reference to FIGS. The description of the points common to the first embodiment is omitted to avoid duplication.

The charged particle beam apparatus according to the present embodiment is an electron beam exposure apparatus for writing a desired pattern on a semiconductor substrate, as in the first embodiment, and as shown in FIG. Deflection coil 21X, Y-direction deflection coil 21Y, X
Direction heat compensation coil 23X, Y direction heat compensation coil 23Y, first
, A second detection unit 24, an arithmetic processing unit 25α, a thermal compensation current control unit 26, and a deflection scanning control unit 27. FIG. 8 is a configuration diagram of the charged particle beam device according to the present embodiment.

The charged particle beam apparatus according to this embodiment is different from the charged particle beam apparatus according to the first embodiment in that
The function of the arithmetic processing unit 25α, the function of the first arithmetic circuit 26A ′, and the point that the DACX 27C and the first arithmetic circuit 26A ′ are not connected.

That is, in this embodiment, the arithmetic processing unit
25α is the corrected supply current ΔI _CX , as in the first embodiment.
Without calculating ΔI _CY , the total sum of the heat values of the coils is calculated for each of the X and Y directions. That is, I _X V _X + I _CX V _CX for the X direction and I _Y V _Y + for the Y direction.
I _CY V _CY is calculated and output to the first arithmetic circuit 26A '.

[0092] The first arithmetic circuit 26A 'is the sum of the calorific value of the coil _{I X V X + I CX V} CX, I Y V Y + I CY V CY
Based on time to time _{I CX = (1 / V CX} ) (A-I X V X) (A constant determined by the _{system) I CY = (1 / V} CY) (A'-I Y V Y) (A 'Is a constant determined by the device), and sets the currents I _CX and I _CY to be supplied to the thermal compensation coils 23X and 23Y.

Hereinafter, the control method of the charged particle beam apparatus according to the present embodiment will be described while supplementing the operation of the apparatus. FIG. 9 is a flowchart illustrating a control method of the charged particle beam device according to the present embodiment. In this embodiment, as in the first embodiment, the thermal compensation of the deflection coil in the Y direction is the same as that in the control in the X direction, and therefore, the description is omitted.

First, a current _IX is supplied to the X-direction deflection coil 21X in step P1 in FIG.
_Is supplied with a current I _CX . At this time, the first arithmetic circuit 26
A ′ calculates a small current I _CX , and the third AMP
Is output to 26B, the current I _CX is supplied to the X-direction thermal compensation coil 23X by AMP26B the third. The operation of the device when the current _IX is supplied to the X-direction deflecting coil 21X is the same as that of the first embodiment, and a description thereof will be omitted.

Next, in step P2, the X-direction deflection coil 21
Detecting a current I _X flowing in the X, and a current V _X applied thereto multiplied by the voltage V _X on the current I _X, X deflection coil
Calculating the calorific value I _X V _X of 21X. The operation of the device at this time is the same as that of the first embodiment, and the description is omitted.

[0096] Then, a current I _CX flowing in the X-direction thermal compensation coil 23X in step P3, and detects the voltage V _CX applied thereto multiplied by the voltage V _CX on the current I _CX, X-direction thermal compensation coil 23X Calorific value I _CX V _CX is calculated. Since the operation of the device at this time is also the same as that of the first embodiment,
Description is omitted.

Further, in step P4, a total heat generation amount I _X V _X + I _CX V _CX = B (B is a constant determined by the apparatus) is calculated.

At this time, the first multiplier 24A and the fourth multiplier 22A are operated by the arithmetic processing unit 25α (the second arithmetic circuit 25A).
Calorific value I _CX V _CX outputted respectively and I _X V _X is addition processing from B, is output to the first arithmetic circuit 26A '.

[0099] Then, in step P5, in order to hold the total _{I X V X + I CX V} CX calorific described above _{constant, I X V X + I CX} V CX = B (the constant B is determined by the apparatus) _{I CX = (1 / V CX} ) (B-I X V X) for supplying a current I _CX newly X-direction thermal compensation coil 23X composed of solving for I _CX. This I _CX is used to make the heat generation of the coil constant.
Corrected current.

At this time, the current I _CX given by the newly corrected I _CX = (1 / V _CX ) (B−I _X V _X ) is calculated by the first arithmetic circuit 26A ′, Output to AMP26B. The current I _CX is changed to X by the third AMP26B.
It is supplied to the directional heat compensation coil 23X.

Further, in step P6, it is determined whether or not a series of operations has been completed. If the process can be ended (Yes), the process ends, and if the operation is continued (No), the process returns to Step P2 and the process is repeated again.

At this time, the determination processing is performed by the arithmetic processing unit 25α in the same manner as in the first embodiment. As described above, according to the charged particle beam device according to the second embodiment of the present invention, as shown in FIG.
, A second detection unit 24, an arithmetic processing unit 25, and a heat compensation current control unit 26.

For example, the current I _X flowing through the X-direction deflection coil 21X by the first detector 22 and the X-direction deflection coil 21X
Voltage V _X applied to is detected from time to time, the heating value I _X V _X of the X-direction deflection coil 21X is calculated.

The current I _CX flowing through the X-direction thermal compensation coil 23X by the second detector 24 and the X-direction thermal compensation coil 23
The voltage V _CX applied to X is detected as needed, and the calorific value I _CX V _{CX of} the X-direction heat compensation coil 23X is calculated.

[0105] Further, by the processing unit 25α the X deflection coil 21X calorific I _X V _X and X-direction thermal compensation coil 23
The total I _X V _X + I _CX V _CX with the calorific value I _CX V _CX of _X is calculated as needed.

Further, the heat generation amounts I _X V _X and X of the X-direction deflection coil 21X calculated as needed by the heat compensation current control unit 26.
On the basis of the heat value I _CX V _CX of the directional heat compensation coil 23X, _X is set so that the total heat value I _X V _X + I _CX V _CX is maintained at a constant value.
The current I _CX supplied to the directional heat compensation coil 23X is supplied while being changed as needed.

Therefore, as in the first embodiment, the deflection
When the heat is generated by the coils 21X and 21Y and the heat compensation coils 23X and 23Y
The resulting current I_X, I_Y, I_CX, I_CYAnd voltage V_X, V_Y,
V_CX, V_CYThe heat value I fluctuates from time to time_XV_X,
I_YV_Y, I_CXV_CX, I_CYV _CYIn response to changes in
Current I that keeps the sum of the calorific values of the_CX, I_CYTo
It becomes possible to supply.

As a result, fluctuations in Joule heat generated by the deflection coils 21X and 21Y and the heat coils 23X and 23Y are suppressed, and
Changes in the convergence state of the electron beam due to expansion or contraction due to thermal fluctuations of the pole piece of the lens coil can be suppressed, and the position of the electron beam that reaches the semiconductor substrate to be irradiated becomes accurate.

Unlike the first embodiment, since the first arithmetic circuit 26A is not connected to the DACX27C and DACY27D, there is an advantage that the circuit configuration is somewhat simplified.

Further, the charging according to the second embodiment of the present invention
According to the control method of the particle beam apparatus, the X-direction deflection coil
Current I flowing through 21X_X, Applied to the X-direction deflection coil 21X
Voltage V_X, The current I flowing through the X-direction thermal compensation coil 23X
_CXAnd the voltage V applied to the X-direction thermal compensation coil 23X_CX
Is detected at any time, and the current I flowing through the X-direction deflection coil 21X is detected.
By multiplying the voltage V applied to the X-direction deflection coil 21X,
Calorific value I of directional deflection coil 21X_XV_XIs calculated from time to time, X direction
Current I flowing through the heat-compensating coil 23X_CXX-direction thermal compensation
Voltage V applied to coil 23X _CXMultiply by X
Heat value I of compensation coil 23X_CXV_CXIs calculated from time to time,
Of the heat generated by the directional coil 21X and the X-direction thermal compensation coil 23X
Sum I_XV_X+ I_CXV_CXIs calculated from time to time, and the sum I_X
V_X+ I_CXV_CXX-direction thermal compensation
Current I to be supplied to the Ill23X_CXTo I_CX= (1 / V_CX) (BI)_XV_X(B is a constant determined by the device)
You.

For this reason, even if the amount of heat generated by the X-direction deflection coil 21X or the X-direction heat compensation coil 23X changes at any time due to the change in current or voltage, the above-described current I _C is reduced by X. By supplying the directional deflection coil 21X as needed, it becomes possible to supply a current to the X-direction heat compensating coil 23X so as to keep the calorific value constant in response to a change in the calorific value of the coil.

Thus, similarly to the control method of the charged particle beam apparatus according to the first embodiment, the electron beam arriving at the substrate accurately reaches the intended position, and the alignment accuracy can be improved. become. Therefore, the reliability of the semiconductor device formed by the electron beam exposure according to the above method is improved.

[0113]

As described above, the first embodiment according to the present invention is described.
According to the charged particle beam apparatus, the deflection unit, the heat compensation unit, the control unit, and the control auxiliary unit are provided.

In the first charged particle beam apparatus according to the present invention, the control assisting means comprises a first detecting means, a second detecting means, and a calculating means. Further, according to the second charged particle beam device according to the present invention, in the first charged particle beam device according to the present invention, the control target in which the calculating means calculates the current supplied to the heat compensating means based on the calculation amount. The amount has been calculated.

For this reason, a current is supplied to keep the control target amount constant in response to a change in the amount of operation that fluctuates every moment due to a change in current or voltage generated when the deflection unit and the heat compensating unit generate heat. It becomes possible.

Thus, the fluctuation of Joule heat generated by the coil used for the deflection means and the heat compensation means is suppressed, and the convergence state of the charged particle beam is increased by expansion and contraction due to the heat fluctuation of the support of the charged particle lens. The change can be suppressed, and the position of the charged particle beam reaching the semiconductor substrate to be irradiated becomes accurate.

According to the second charged particle beam apparatus of the present invention, since the deflecting means and the control means are not connected, the circuit configuration is higher than that of the first charged particle beam apparatus of the present invention. Is somewhat easier.

Further, according to the first control method of the charged particle beam apparatus according to the present invention, the heat generation state of the deflecting means and the heat compensation means is controlled while monitoring the heat generation state of the deflection means and the heat compensation means. The output of the heat compensator is controlled based on the correction current or the control target amount.

Further, in the first control method of the charged particle beam apparatus according to the present invention, a current including a correction current is supplied to the thermal compensation means as needed. For this reason, due to changes in current and voltage generated when the deflection unit and the heat compensation unit generate heat,
It is possible to supply a current that keeps the control target amount constant by changing the current by the correction current at any time in response to the change in the calculation amount that fluctuates every moment.

Further, according to the second control method of the charged particle beam apparatus of the present invention, the current is calculated by the control formula based on the control target amount, and the current is supplied to the thermal compensation means as needed. Features.

For this reason, a current is supplied so as to keep the control target amount constant in response to a change in the amount of operation that fluctuates every moment due to a change in current or voltage generated when the deflection means and the heat compensation means generate heat. It becomes possible.

Thus, the fluctuation of Joule heat generated by the coil used for the deflecting means and the heat compensating means is suppressed, and the convergence state of the charged particle beam is changed by expansion and contraction due to the heat fluctuation of the support of the charged particle lens. The change can be suppressed, and the position of the charged particle beam reaching the semiconductor substrate to be irradiated becomes accurate.

Therefore, for example, when the apparatus is an electron beam exposure apparatus, it is possible to improve the positioning accuracy, which greatly contributes to the improvement of the reliability of a semiconductor device manufactured using the apparatus. It is.

[Brief description of the drawings]

FIG. 1 is a principle diagram (part 1) of a charged particle beam device according to the present invention.

FIG. 2 is a principle diagram (part 2) of the charged particle beam device according to the present invention.

FIG. 3 is a flowchart (part 1) illustrating a control method of the charged particle beam device according to the present invention.

FIG. 4 is a flowchart (part 2) illustrating a control method of the charged particle beam device according to the present invention.

FIG. 5 is a configuration diagram of a charged particle beam device according to a first embodiment of the present invention.

FIG. 6 is a supplementary explanatory diagram of the charged particle beam device according to each embodiment of the present invention.

FIG. 7 is a flowchart illustrating a control method of the charged particle beam device according to the first embodiment of the present invention.

FIG. 8 is a configuration diagram of a charged particle beam device according to a second embodiment of the present invention.

FIG. 9 is a flowchart illustrating a method for controlling a charged particle beam device according to a second embodiment of the present invention.

FIG. 10 is a configuration diagram of a charged particle beam device according to a conventional example.

[Explanation of symbols]

11 ... deflecting means, 12 ... thermal compensation means, 13 ... control unit, 14 ... control auxiliary means, SS ... arithmetic unit, [Delta] I _C ... correction current, IV + I _C V _C ... control target amount.

──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor: Akio Yamada 1015, Uedanaka, Nakahara-ku, Kawasaki-shi, Kanagawa Prefecture Inside Fujitsu Co., Ltd. 56) References JP-A-5-190428 (JP, A) JP-A-64-17364 (JP, A) JP-A-3-261112 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , (DB name) H01J 37/305 G03F 7/20 G21K 5/04 H01J 37/147

Claims (7)

(57) [Claims] A deflecting means (1) for deflecting a charged particle beam.
1), a heat compensating means (12) for compensating a heat generation state of the deflection means (11), a control means (13) for controlling a heat generation state of the heat compensation means (12), and the control means (13) Control auxiliary means (14) for controlling the output of the control means (14). The control auxiliary means (14) controls the control means (13) based on the heat generation state of the heat compensation means (12) and the deflection state of the deflection means (11). ), Which outputs a control auxiliary signal (SS) to the charged particle beam device. 2. A charged particle beam apparatus according to claim 1, wherein said control means (13) corrects a control current (ΔI _C ) or a control target amount (IV + I) as a control auxiliary signal (SS).
A charged particle beam apparatus for controlling the output of a current (I _C ) to be supplied to the thermal compensation means (12) based on _C V _C ). 3. The charged particle beam apparatus according to claim 1, wherein the control assisting means (14) includes a current (I) flowing through the deflecting means (11) and a voltage (I) applied to the deflecting means (11). V) at any time, and the amount of calculation (I
V) The first detection means (14A) for calculating V), the current (I _C ) flowing through the heat compensation means (12) and the voltage (V _C ) applied to the heat compensation means (12) are detected at any time. computation amount and (I _C V _C) a second detecting means for calculating the (14B), said initial setting control amount (I, V) and the calculation amount of the thermal compensation means (12) Te (IV, I _C V
_And a calculating means (14C) for calculating a correction current (ΔI _C ) for correcting the current (I _C ) supplied to the heat compensating means (12) based on _C ). 4. The charged particle beam apparatus according to claim 3, wherein said calculation means (14C) calculates the calculation amounts (IV, I
_C V _C) charged particle beam apparatus characterized by calculating a control target amount for calculating the current supplied (I _C) to the thermal compensation means (12) to (IV + I _C V _C) based on. 5. A deflecting means (1) for deflecting a charged particle beam.
1) A method for controlling a heat compensating means (12) for compensating a heat generation state of 1), wherein the deflection means (11) is monitored while monitoring the heat generation state of the deflection means (11) and the heat compensation means (12). And a correction current (Δ) for controlling the heat generation state of the heat compensating means (12).
I _C) or a control target amount (the control method of the charged particle beam device IV + based on I _C V _C) and outputs the control of the heat compensating means (12). 6. The control method for a charged particle beam device according to claim 5, wherein the currents (I, I _C ) flowing through the deflecting means (11) and the thermal compensation means (12) and the deflecting means (11) are controlled. ), The voltage (V _C ) applied to the thermal compensation means (12)
From time to time, the detection process, the detection processing calculation amount according to the deflecting means (11) based on (IV) and the arithmetic quantity relating to the thermal compensation means (12) (I _C
V _C ) is calculated at any time. Based on the calculation processing, a current (I _C ′) including a correction current (ΔI _C ) is calculated by the following equation [1], that is, I _C ′ = I _C + ΔI _C = [1 / V _C ] [A-IV]... [1], where A is an arithmetic operation using a control arithmetic expression that is an arbitrary thermal equilibrium constant of the deflection system of the charged particle beam device, and the correction current A method for controlling a charged particle beam apparatus, wherein a current (I _C ′) including (ΔI _C ) is supplied to the thermal compensation means (12) as needed. 7. The control method for a charged particle beam apparatus according to claim 5, wherein the currents (I, I _C ) flowing through the deflecting means (11) and the thermal compensation means (12) and the deflecting means (11) are controlled. )
A voltage (V) applied to the heat compensating means (12) and a voltage (V _C ) applied to the heat compensating means (12) are detected at any time. And the operation amount (I _C ) related to the heat compensation means (12).
V _C ) at any time, calculating the control target amount (IV + I _C V _C ) for determining the current (I _C ) flowing to the heat compensating means (12) based on the calculation processing, Based on the target amount (IV + I _C V _C ), the current (I
_C ′) is given by the following equation [2], ie, I _C ′ = [1 / V _C ] [A-IV]... [2], where A is an arbitrary thermal balance of the deflection system of the charged particle beam apparatus. A method for controlling a charged particle beam apparatus, comprising: performing arithmetic processing by a control arithmetic expression that is a constant; and supplying the current (I _C ′) to the thermal compensation means (12) as needed.