JP3171453B2 - Magnetoresistance effect element - Google Patents

Magnetoresistance effect element

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Publication number
JP3171453B2
JP3171453B2 JP06578391A JP6578391A JP3171453B2 JP 3171453 B2 JP3171453 B2 JP 3171453B2 JP 06578391 A JP06578391 A JP 06578391A JP 6578391 A JP6578391 A JP 6578391A JP 3171453 B2 JP3171453 B2 JP 3171453B2
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JP
Japan
Prior art keywords
layer
laminate
magnetic layer
magnetic
group
Prior art date
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Expired - Fee Related
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JP06578391A
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Japanese (ja)
Other versions
JPH04302103A (en
Inventor
浩一郎 猪俣
好昭 斉藤
志保 奥野
進 橋本
圭一郎 柚須
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Toshiba Corp
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Toshiba Corp
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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

［発明の目的］ [Object of the invention]

【０００１】[0001]

【産業上の利用分野】本発明は、磁気抵抗効果素子に関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistance effect element .

【０００２】[0002]

【従来の技術】一般に人工格子膜と呼ばれている超薄膜
構造を採る積層膜は、一定の膜厚の元素Ａからなる超薄
膜と元素Ｂからなる超薄膜とが、交互に積層されてい
る。この様な人工格子膜は特異な性質を示し、研究が盛
んに行われている。2. Description of the Related Art A laminated film having an ultrathin film structure generally called an artificial lattice film is formed by alternately laminating an ultrathin film composed of an element A and an ultrathin film composed of an element B having a constant thickness. . Such an artificial lattice film has unique properties, and has been actively studied.

【０００３】例えば従来にない巨大な磁気抵抗効果を示
すもの（例えば Phy.Rev.Lett. 61,2472(1988)) や、短
波長でカー回転角の大きい垂直磁化を示すもの（例えば
J.Appl.Phys.67,2136(1990))などが報告されている。[0003] For example, those exhibiting an unprecedented giant magnetoresistance effect (eg, Phy. Rev. Lett. 61,2472 (1988)) and those exhibiting a short magnetization and a perpendicular magnetization having a large Kerr rotation angle (eg,
J. Appl. Phys. 67, 2136 (1990)).

【０００４】[0004]

【発明が解決しようとする課題】しかしながら従来の人
工格子膜では、例えばカー回転角が十分ではない，大き
な磁気抵抗効果を得るには大きな磁界を必要とするなど
の問題点があり、実用上の大きな問題となっている。こ
の種の特性を向上しようとして、最適膜厚，構成元素，
積層数などの制御が試みられているが、更なる特性向上
には限界があった。本発明は以上の点を考慮してなされ
たもので、新たな手法で特性向上を図ることのできる積
層膜の構造を提供することを目的とする。 ［発明の構成］However, conventional artificial lattice films have problems such as insufficient Kerr rotation angle and a large magnetic field to obtain a large magnetoresistance effect. It is a big problem. In order to improve this kind of characteristics, the optimum film thickness, constituent elements,
Attempts have been made to control the number of layers, but there is a limit to further improving the characteristics. The present invention has been made in consideration of the above points, and has as its object to provide a structure of a laminated film that can improve characteristics by a new method. [Configuration of the Invention]

【０００５】[0005]

【課題を解決するための手段および作用】本発明者らは
磁気抵抗効果の改善を図り、従来一定の膜厚で積層され
ていた人工格子膜の膜厚を積層方向で変調して特性を評
価した。その結果従来に比較して小さい磁界で大きな磁
気抵抗効果を実現できることを見出した。Means for Solving the Problems and Functions The present inventors have attempted to improve the magnetoresistance effect and evaluated the characteristics by modulating the thickness of the artificial lattice film conventionally laminated with a constant film thickness in the laminating direction. did. As a result, they have found that a large magnetoresistance effect can be realized with a small magnetic field as compared with the related art.

【０００６】本発明はこの様な知見に基づくものであ
り、構成元素の異なる薄膜を積層してなる積層膜におい
て、積層周期が異なることを特徴とする積層膜である。
ここでいう積層周期が異なるとは、例えば元素Ａからな
る薄膜と元素Ｂからなる薄膜との積層を考えた場合、元
素Ａの薄膜の膜厚ｔA もしくは元素Ｂの薄膜の膜厚ｔB
の少なくとも一方が一定ではなく、異なっている状態を
指す。以後この様な状態を積層変調と呼ぶ。従ってこの
積層変調状態では各層が異なる膜厚を有していても良い
し、積層変調された積層膜をユニットとして、これの繰
り返しでも構わない。この様な場合は長期的に見れば積
層周期をもっていることになる。The present invention is based on such knowledge, and is a laminated film in which lamination cycles are different in a laminated film in which thin films having different constituent elements are laminated.
The term “different lamination cycle” used herein means that, for example, when a lamination of a thin film made of the element A and a thin film made of the element B is considered, the thickness t A of the thin film of the element A or the thickness t B of the thin film of the element B is considered.
At least one is not constant but different. Hereinafter, such a state is referred to as stack modulation. Therefore, in this layer modulation state, each layer may have a different film thickness, or the layer modulation may be repeated as a unit. In such a case, there is a lamination cycle in the long term.

【０００７】磁気抵抗効果を考慮した場合は、Ｆｅ，Ｃ
ｏ，Ｎｉなどの磁性元素からなる磁性層（好ましくは５
〜３０オングストローム）と、Ｃｒ，Ｍｎ，Ｃｕ，Ａ
ｕ，Ａｇ，Ｐｔ，Ｐｄ，Ａｌなどの非磁性元素からなる
非磁性層（好ましくは５〜８０オングストローム）とが
積層された磁気抵抗効果を奏する人工格子膜において、
膜厚を一定とせず積層変調することによって本発明を実
現できる。When the magnetoresistance effect is considered, Fe, C
a magnetic layer made of a magnetic element such as
-30 Å), Cr, Mn, Cu, A
An artificial lattice film having a magnetoresistance effect, in which a nonmagnetic layer (preferably 5 to 80 angstroms) made of a nonmagnetic element such as u, Ag, Pt, Pd, or Al is laminated,
The present invention can be realized by performing the stack modulation without making the film thickness constant.

【０００８】[0008]

【実施例】以下に本発明の実施例を説明する。 （実施例１）イオンビームスパッタリング法を用いてＣ
ｏとＣｕからなる積層変調多層膜を作成した。まずチャ
ンバー内を１×１０-9torrまで排気した後、Ａｒを５×
１０-4torrまで導入した後、３００Ｖ，３０ｍＡの加速
条件でスパッタリングを行った。ターゲットとしてＣｏ
とＣｕを用意して、石英基板（ＳｉＯ2 ）上に成膜し
た。Embodiments of the present invention will be described below. (Embodiment 1) C was formed by ion beam sputtering.
A laminated modulation multilayer film made of o and Cu was prepared. First, after evacuating the chamber to 1 × 10 -9 torr, Ar
After introducing up to 10 -4 torr, sputtering was performed under acceleration conditions of 300 V and 30 mA. Co as target
And Cu were prepared and formed on a quartz substrate (SiO 2 ).

【０００９】石英基板上に１０オングストロームのＣ
ｕ，１５オングストームのＣｏの組み合わせを２回繰り
返し、その上に１５オングストロームのＣｕ，１５オン
グストームのＣｏの組み合わせを２回繰り返したものを
基本ユニットとして、これをｎ回繰り返した。これを S
iO2 ／[(10Cu/15Co)2 /(15Cu/15Co)2 ］n と表示する。
この構成を図１に模式的に示す。On a quartz substrate, 10 angstroms of C
The combination of u and 15 angstroms of Co was repeated twice, and the combination of 15 angstroms of Cu and 15 angstroms of Co was repeated twice as a basic unit. This was repeated n times. This is S
iO 2 / [(10Cu / 15Co ) 2 / (15Cu / 15Co) 2] indicated as n.
This configuration is schematically shown in FIG.

【００１０】この膜面内で互いに直角になるように磁界
と電流を印加し、磁界の大きさを変化させて電気抵抗を
測定した。ｎ＝１５の場合を図２（ａ）に示した。併せ
て図２（ｂ）に変調しなかった場合，すなわち SiO2 ／
[(10Cu/15Co)2 ］n (n=15)の電気抵抗を示した（比較例
１）。A magnetic field and a current were applied at right angles to each other in the film plane, and the electric resistance was measured while changing the magnitude of the magnetic field. FIG. 2A shows the case where n = 15. If not modulated in FIG 2 (b) together, i.e. SiO 2 /
An electric resistance of [(10Cu / 15Co) 2 ] n (n = 15) was shown (Comparative Example 1).

【００１１】同図から明らかなように、本発明の場合は
小さい磁界で急激に電気抵抗が増加した後、磁界ととも
に減少している。これに対し比較例の場合は、磁界とと
もに電気抵抗がなだらかに減少している。従って本発明
の方が小さい磁界で大きな磁気抵抗効果（ＭＲ効果）を
得ることができることが確認された。As is apparent from FIG. 1, in the case of the present invention, the electric resistance rapidly increases with a small magnetic field and then decreases with the magnetic field. On the other hand, in the case of the comparative example, the electric resistance decreases gradually with the magnetic field. Therefore, it was confirmed that the present invention can obtain a large magnetoresistance effect (MR effect) with a small magnetic field.

【００１２】（実施例２）実施例１と同様に SiO2 ／
[(13Cr/20Fe)2 /(20Cr/20Fe)2 ］n （ｎ＝１０）の場合
を図３（ａ）に示した。併せて図３（ｂ）に変調しなか
った場合，すなわちSiO2 ／[(13Cr/20Fe)2 ］n （ｎ＝
１０）の電気抵抗を示した（比較例２）。同図から明ら
かなように、本発明の場合は小さい磁界で急激に電気抵
抗が増加した後、磁界とともに減少し、大きな磁界で飽
和している。これに対し比較例の場合は、磁界とともに
電気抵抗が単調に減少している。したがって本発明はＭ
Ｒ効果の挙動が従来とは異なり、小さい磁界で大きな磁
気抵抗効果（ＭＲ効果）を得ることができることが確認
された。Example 2 As in Example 1, SiO 2 /
FIG. 3A shows the case of [(13Cr / 20Fe) 2 / (20Cr / 20Fe) 2 ] n (n = 10). In addition, FIG. 3B shows a case where no modulation is performed, that is, SiO 2 / [(13Cr / 20Fe) 2 ] n (n =
10) (Comparative Example 2). As is clear from the figure, in the case of the present invention, the electric resistance rapidly increases with a small magnetic field, then decreases with the magnetic field, and saturates with a large magnetic field. On the other hand, in the case of the comparative example, the electric resistance monotonously decreases with the magnetic field. Therefore, the present invention
It was confirmed that the behavior of the R effect was different from the conventional one, and a large magnetoresistance effect (MR effect) could be obtained with a small magnetic field.

【００１３】（実施例３）実施例１と同様に SiO2 ／
[(10Ni/10Fe)2 /50Cu/30Co/50Cu]n でｎ＝１５の場合を
図４に示した。同図から明らかなように、電気抵抗が磁
界とともに減少し、５Oe程度の小さい磁界で飽和し、約
１０％程度の大きなＭＲ効果を得ることができた。(Example 3) As in Example 1, SiO 2 /
FIG. 4 shows the case where [(10Ni / 10Fe) 2 / 50Cu / 30Co / 50Cu] n and n = 15. As is clear from the figure, the electric resistance decreases with the magnetic field, saturates with a small magnetic field of about 5 Oe, and a large MR effect of about 10% can be obtained.

【００１４】（実施例４）実施例１と同様に SiO2 ／
[(30Pt/5Co/30Cu)/(30Pt/8Co/30Cu)] n でｎ＝１０の場
合を図５に示した。同図から明らかなように、電気抵抗
が磁界とともに減少し、100 Oe程度の小さい磁界で飽和
し、約１５％程度の大きなＭＲ効果を得ることができ
た。(Example 4) As in Example 1, SiO 2 /
[(30Pt / 5Co / 30Cu) / (30Pt / 8Co / 30Cu)] n and n = 10 are shown in FIG. As is clear from the figure, the electric resistance decreased with the magnetic field, saturated with a small magnetic field of about 100 Oe, and a large MR effect of about 15% was obtained.

【００１５】（実施例５）また積層変調の方法として異
なる特性，例えば保磁力，キュリー温度、を有する積層
膜ユニットを非磁性層を介して積層する手法が挙げられ
る。すなわち、磁性層と金属層とが交互に積層された状
態を （Ｍ／Ｎ）n Ｍは磁性体，Ｎは金属，ｎは積層数 で表したとき、（Ｍ／Ｎ）n が非磁性層Ｌを介して複数
層積層されていることを特徴とするものである。なお積
層ユニット中のＭ，Ｎは一種類に限らず、例えば３層以
上の積層でも構わないし、その積層ユニット自体が積層
変調膜であっても良い。(Embodiment 5) As a method of laminating, there is a method of laminating laminated film units having different characteristics, for example, coercive force and Curie temperature, via a non-magnetic layer. That is, (M / N) n where M is a magnetic material, N is a metal, and n is the number of layers, where (M / N) n is a non-magnetic layer. A plurality of layers are stacked via L. Note that M and N in the stacked unit are not limited to one type, and may be, for example, three or more layers, or the stacked unit itself may be a stacked modulation film.

【００１６】図６にその概略を示す。ｍ番目の積層ユニ
ットが磁性層Ｍm と貴金属などの金属層Ｎm とのｎm 層
の積層体（Ｎm ／Ｍm ）ｎm となっており、ｍ番目の非
磁性層Ｌm を介して積層されている状態を示している。FIG. 6 shows the outline. m th laminate unit has a n m layer laminate (Nm / Mm) n m of the metal layer Nm such as a magnetic layer Mm and a noble metal are stacked through the m-th non-magnetic layer Lm The state is shown.

【００１７】非磁性層は、これを介して対向している積
層膜ユニットの磁気的相互作用を消す機能を有してお
り、非磁性体であれば良い。例えば、ＳｉＯ2，Ａｌ2
Ｏ3 ，各種ガラス,Pt,Pd,Au,Ag,Al,Cu,Mn,Cr,Si 等が挙
げられる。膜厚は磁気的結合が遮断される10オングスト
ローム以上程度である。また余り厚いと磁気的に一体と
なった積層膜としては取り扱えなくなるため、せいぜい
１００オングストローム程度が限界である。好ましくは
３０オングストローム乃至８０オングストロームであ
る。The non-magnetic layer has a function of eliminating the magnetic interaction between the laminated film units facing each other via the non-magnetic layer, and may be any non-magnetic material. For example, SiO 2 , Al 2
O 3 , various glasses, Pt, Pd, Au, Ag, Al, Cu, Mn, Cr, Si and the like. The film thickness is about 10 angstroms or more at which magnetic coupling is interrupted. If it is too thick, it cannot be handled as a magnetically integrated laminated film, so the limit is at most about 100 Å. Preferably it is 30 Å to 80 Å.

【００１８】さてこの様な積層変調膜をＣｏ，Ｐｄ，Ａ
ｌで実現した例を説明する。まずチャンバー内を１×１
０-9torrまで排気した後、Ａｒを１×１０-3torrまで導
入した後、500V-30mA の加速条件でスパッタリングを行
った。ターゲットとしてＣｏとＰｄとＡｌを用意して、
石英基板（ＳｉＯ2 ）上に成膜した。Now, such a laminated modulation film is formed of Co, Pd, A
1 will be described. First, 1 × 1 inside the chamber
After evacuation to 0 -9 torr, Ar was introduced to 1 × 10 -3 torr, and then sputtering was performed under acceleration conditions of 500 V-30 mA. Prepare Co, Pd and Al as targets,
A film was formed on a quartz substrate (SiO 2 ).

【００１９】石英基板上に非磁性層として100 オングス
トロームのＡｌを介して磁性層として５オングストロー
ムのＣｏと金属層として15オングストロームのＰｄとを
２回繰り返した第１の積層ユニットを成膜した後、再び
非磁性層として100 オングストロームのＡｌを介して第
１の積層膜を積層するという繰り返しを１０回繰り返
し、約1000オングストローム厚の［(5Co/15Pd)2 /100A
l］10の積層変調膜を作成した（試料番号5-1)。この積
層膜の磁化曲線を図７（ａ）に、磁気抵抗変化率を図７
（ｂ）に示した。After forming a first laminated unit in which 5 Å of Co as a magnetic layer and 15 Å of Pd as a metal layer are repeated twice on a quartz substrate via 100 Å of Al as a nonmagnetic layer, The first laminated film is again laminated 10 times through 100 Å of Al as a non-magnetic layer, and the repetition is repeated 10 times, so that [(5Co / 15Pd) 2 / 100A having a thickness of about 1000 Å is obtained.
l] Ten laminated modulation films were prepared (Sample No. 5-1). FIG. 7A shows the magnetization curve of this laminated film, and FIG.
(B).

【００２０】同様にして［(5Co/15Pd)2 /50Al/(5Co/10P
d)3 /50Al]5 の積層変調膜を作成した（試料番号5-2)。
この積層膜の磁化曲線を図８（ａ）に磁気抵抗変化率を
図８（ｂ）に示した。Similarly, [(5Co / 15Pd) 2 / 50Al / (5Co / 10P
d) A laminated modulation film of 3 / 50Al] 5 was prepared (Sample No. 5-2).
FIG. 8A shows the magnetization curve of this laminated film, and FIG. 8B shows the magnetoresistance change rate.

【００２１】図７（ａ）と図８（ａ）を比較して明らか
なように、試料番号5-2 の場合は２段ヒステリシスルー
プが実現されている。またそれに伴い、磁気抵抗効果も
変化していることが分かる。すなわち図８（ｂ）から分
かるように、比較的小さい磁界で磁気抵抗変化率が大き
く変化している。これは非磁性層を介して積層される(5
Co/15Pd)2 と(5Co/10Pd)3 とが異なる保磁力を有するた
め２段ヒステリシスが実現され、外部磁界に対する磁気
構造が異なるため、スピンに依存した散乱に伴い、比較
的小さい磁界で磁気抵抗変化率が大きく変化するものと
思われる。As is apparent from a comparison between FIG. 7A and FIG. 8A, in the case of sample number 5-2, a two-stage hysteresis loop is realized. In addition, it can be seen that the magnetoresistive effect changes accordingly. That is, as can be seen from FIG. 8B, the rate of change in magnetoresistance changes significantly with a relatively small magnetic field. This is laminated via a non-magnetic layer (5
(Co / 15Pd) 2 and (5Co / 10Pd) 3 have different coercive forces to achieve two-stage hysteresis, and have a different magnetic structure for external magnetic fields. It is thought that the resistance change rate changes greatly.

【００２２】（実施例６）実施例５と同様にして［(5Co
/20Pt)3/70Cu]10、約1000オングストローム厚の積層変
調膜を作成した（試料番号6-1)。この積層膜の磁化曲線
を図９（ａ）に、磁気抵抗変化率を図９（ｂ）に示し
た。(Example 6) [(5Co
/ 20Pt) 3 / 70Cu] 10 , and a multilayer modulation film having a thickness of about 1000 angstroms was prepared (sample number 6-1). FIG. 9A shows the magnetization curve of this laminated film, and FIG. 9B shows the magnetoresistance ratio.

【００２３】同様にして［(5Co/20Pt)2 /50Cu/(5Co/15P
t)2 /30Cu/(5Co/10Pt)5 ］4の積層変調膜を作成した
（試料番号6-2)。この積層膜の磁化曲線を図１０（ａ）
に、磁気抵抗変化率を図１０（ｂ）に示した。Similarly, [(5Co / 20Pt) 2 / 50Cu / (5Co / 15P
t) 2 / 30Cu / (5Co / 10Pt) 5 ] 4 laminated modulation film was prepared (sample number 6-2). The magnetization curve of this laminated film is shown in FIG.
FIG. 10B shows the magnetoresistance ratio.

【００２４】図９（ａ）と図１０（ａ）を比較して明ら
かなように、試料番号6-2 の場合は３段ヒステリシスル
ープが実現されている。またそれに伴い、磁気抵抗効果
も変化していることが分かる。すなわち図１０（ｂ）か
ら分かるように、比較的小さい磁界で磁気抵抗変化率が
大きく変化している。これは非磁性層を介して積層され
る(5Co/20Pt)2 と(5Co/15Pt)2 と(5Co/10Pt)5 とが異な
る保磁力を有するため３段ヒステリシスが実現され、外
部磁界に対する磁気構造が異なるため、スピンに依存し
た散乱に伴い、比較的小さい磁界で磁気抵抗変化率が大
きく変化するものと思われる。As is apparent from a comparison between FIG. 9A and FIG. 10A, in the case of sample No. 6-2, a three-stage hysteresis loop is realized. In addition, it can be seen that the magnetoresistive effect changes accordingly. That is, as can be seen from FIG. 10B, the rate of change in magnetoresistance changes significantly with a relatively small magnetic field. This is because (5Co / 20Pt) 2 , (5Co / 15Pt) 2, and (5Co / 10Pt) 5, which are laminated via a non-magnetic layer, have different coercive forces, so that three-stage hysteresis is realized, Since the structures are different, it is considered that the magnetoresistance change rate largely changes with a relatively small magnetic field due to spin-dependent scattering.

【００２５】[0025]

【発明の効果】以上説明したように本発明によれば、積
層変調により各種特性を具備する積層膜を有する磁気抵
抗効果素子を得ることができる。例えばＭＲ効果を見れ
ば従来に比較し、小さい磁界で大きな磁気抵抗変化率を
実現することができるため、磁気センサ、ＭＲ磁気ヘッ
ドなどへの応用の際に非常に有効である。As described above, according to the present invention, a magnetic resistor having a laminated film having various characteristics by lamination modulation is provided.
An anti-effect element can be obtained. For example, if the MR effect is observed, a large rate of change in magnetoresistance can be realized with a small magnetic field as compared with the related art, so that it is very effective when applied to a magnetic sensor, an MR magnetic head, and the like.

【図面の簡単な説明】[Brief description of the drawings]

【図１】 積層膜の構造を示す概略図FIG. 1 is a schematic diagram showing the structure of a laminated film

【図２】 積層膜の特性を示す特性図FIG. 2 is a characteristic diagram showing characteristics of a laminated film.

【図３】 積層膜の特性を示す特性図FIG. 3 is a characteristic diagram showing characteristics of a laminated film.

【図４】 積層膜の特性を示す特性図FIG. 4 is a characteristic diagram showing characteristics of a laminated film.

【図５】 積層膜の特性を示す特性図FIG. 5 is a characteristic diagram showing characteristics of a laminated film.

【図６】 積層膜の構造を示す概略図FIG. 6 is a schematic view showing the structure of a laminated film.

【図７】 積層膜の特性を示す特性図FIG. 7 is a characteristic diagram showing characteristics of a laminated film.

【図８】 積層膜の特性を示す特性図FIG. 8 is a characteristic diagram showing characteristics of a laminated film.

【図９】 積層膜の特性を示す特性図FIG. 9 is a characteristic diagram showing characteristics of a laminated film.

【図１０】 積層膜の特性を示す特性図FIG. 10 is a characteristic diagram showing characteristics of a laminated film.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 橋本 進 神奈川県川崎市幸区小向東芝町１番地 株式会社東芝 総合研究所内 (72)発明者 柚須 圭一郎 神奈川県川崎市幸区小向東芝町１番地 株式会社東芝 総合研究所内 (56)参考文献 特開 平４−48708（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01F 10/00 H01L 43/10 G11B 11/10 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Susumu Hashimoto, Inventor No. 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki-shi, Kanagawa Pref. Address Toshiba Research Institute, Inc. (56) References JP-A-4-48708 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) H01F 10/00 H01L 43/10 G11B 11 / Ten

Claims (6)

(57)【特許請求の範囲】(57) [Claims] 【請求項１】 Ｃｒ、Ｍｎ、Ｃｕ、Ａｕ、Ａｇ、Ｐｔ、
Ｐｄ、Ａｌよりなる第１の群から選ばれる同一の元素を
含み、互いに膜厚が異なる第１及び第２の非磁性層と、
Ｆｅ、Ｃｏ、Ｎｉよりなる第２の群から選ばれる元素を
含む磁性層とを備え、 前記第１の非磁性層と前記磁性層との積層体を備える第
１の積層体と、前記第２の非磁性層と前記磁性層との積
層体を備える第２の積層体とを積層したことを特徴とす
る 磁気抵抗効果素子。 1. Cr, Mn, Cu, Au, Ag, Pt,
The same element selected from the first group consisting of Pd and Al
First and second non-magnetic layers having different thicknesses from each other,
An element selected from the second group consisting of Fe, Co, and Ni
A magnetic layer including the first non-magnetic layer and the magnetic layer.
1 and the product of the second non-magnetic layer and the magnetic layer
And a second laminated body having a layered body.
The magneto-resistance effect element that. 【請求項２】 Ｃｒ、Ｍｎ、Ｃｕ、Ａｕ、Ａｇ、Ｐｔ、
Ｐｄ、Ａｌよりなる第１の群から選ばれる同一の元素を
含み、互いに膜厚が異なる第１及び第２の非磁性層と、
Ｆｅ、Ｃｏ、Ｎｉよりなる第２の群から選ばれる同一の
元素を含み、互いに膜厚が異なる第１及び第２の磁性層
とを備え、 前記第１の非磁性層と前記第１の磁性層との積層体を備
える第１の積層体と、前記第２の非磁性層と前記第２の
磁性層との積層体を備える第２の積層体とを積層したこ
とを特徴とする 磁気抵抗効果素子。 2. Cr, Mn, Cu, Au, Ag, Pt,
The same element selected from the first group consisting of Pd and Al
First and second non-magnetic layers having different thicknesses from each other,
The same selected from the second group consisting of Fe, Co, Ni
First and second magnetic layers containing elements and having different thicknesses from each other
And a laminate of the first nonmagnetic layer and the first magnetic layer.
A first laminate, the second nonmagnetic layer, and the second
The second laminate having the laminate with the magnetic layer is laminated.
And a magnetoresistance effect element. 【請求項３】 Ｃｒ、Ｍｎ、Ｃｕ、Ａｕ、Ａｇ、Ｐｔ、
Ｐｄ、Ａｌよりなる第１の群から選ばれる同一の元素を
含み、互いに膜厚が異なる第１、第２及び第３の非磁性
層と、Ｆｅ、Ｃｏ、Ｎｉよりなる第２の群から選ばれる
元素を含む磁性層とを備え、 前記第１の非磁性層と前記磁性層との積層体を備える第
１の積層体と、前記第２の非磁性層と前記磁性層との積
層体を備える第２の積層体と、前記第３の非磁性層と前
記磁性層との積層体を備える第３の積層体とを積層した
ことを特徴とする 磁気抵抗効果素子。 3. Cr, Mn, Cu, Au, Ag, Pt,
The same element selected from the first group consisting of Pd and Al
First, second and third non-magnetic layers having different thicknesses from each other
Layer and a second group consisting of Fe, Co, Ni
A magnetic layer containing an element, and a first layer including a stacked body of the first nonmagnetic layer and the magnetic layer.
1 and the product of the second non-magnetic layer and the magnetic layer
A second laminated body including a layered body, the third nonmagnetic layer,
A third laminate having a laminate with the magnetic layer was laminated.
A magnetoresistive effect element characterized in that: 【請求項４】 Ｃｒ、Ｍｎ、Ｃｕ、Ａｕ、Ａｇ、Ｐｔ、
Ｐｄ、Ａｌよりなる第１の群から選ばれる同一の元素を
含み、互いに膜厚が異なる第１、第２及び第３の非磁性
層と、Ｆｅ、Ｃｏ、Ｎｉよりなる第２の群から選ばれる
同一の元素を含み、互いに膜厚が異なる第１、第２及び
第３の磁性層とを備え、 前記第１の非磁性層と前記第１の磁性層との積層体を備
える第１の積層体と、前記第２の非磁性層と前記第２の
磁性層との積層体を備える第２の積層体と、前 記第３の
非磁性層と前記第３の磁性層との積層体を備える第３の
積層体とを積層したことを特徴とする 磁気抵抗効果素
子。 4. Cr, Mn, Cu, Au, Ag, Pt,
The same element selected from the first group consisting of Pd and Al
First, second and third non-magnetic layers having different thicknesses from each other
Layer and a second group consisting of Fe, Co, Ni
First, second, and third layers containing the same element and having different film thicknesses from each other.
A third magnetic layer, and a laminate of the first nonmagnetic layer and the first magnetic layer.
A first laminate, the second nonmagnetic layer, and the second
A second laminate comprising a laminate of a magnetic layer, before Symbol third
A third layer including a laminate of the nonmagnetic layer and the third magnetic layer;
A magnetoresistive element , comprising a laminate and a laminate . 【請求項５】 前記第１の積層体、前記第２の積層体、
または前記第３の積層体に隣接し、 Ｃｒ、Ｍｎ、Ｃ
ｕ、Ａｕ、Ａｇ、Ｐｔ、Ｐｄ、Ａｌ、Ｓｉ、ＳｉＯ 2 、
Ａｌ 2 Ｏ 3 よりなる第３の群から選ばれる物質を含む第４
の非磁性層を設けることを特徴とする請求項１、２、３
または４記載の 磁気抵抗効果素子。 5. The first laminate, the second laminate,
Or adjacent to the third laminate, Cr, Mn, C
u, Au, Ag, Pt, Pd, Al, Si, SiO 2 ,
A fourth material containing a substance selected from the third group consisting of Al 2 O 3
4. A non-magnetic layer according to claim 1, wherein:
Or the magnetoresistance effect element according to 4 . 【請求項６】 Ｃｒ、Ｍｎ、Ｃｕ、Ａｕ、Ａｇ、Ｐｔ、
Ｐｄ、Ａｌよりなる第１の群から選ばれる元素を含む 非
磁性層を挟む、Ｆｅ、Ｃｏ、Ｎｉよりなる第２の群から
選ばれる元素を含む磁性層が形成され、少なくとも一方
の前記磁性層が、前記第２の群のうちの異なる元素を含
む複数の層を備える事を特徴とする磁気抵抗効果素子。 6. Cr, Mn, Cu, Au, Ag, Pt,
From a second group made of Fe, Co, and Ni sandwiching a nonmagnetic layer containing an element selected from the first group made of Pd and Al
A magnetic layer containing the selected element is formed, and at least one of the magnetic layers contains a different element from the second group.
Magnetoresistive element characterized by comprising a non-multiple layers.
JP06578391A 1991-03-29 1991-03-29 Magnetoresistance effect element Expired - Fee Related JP3171453B2 (en)

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JP3171453B2 true JP3171453B2 (en) 2001-05-28

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Publication number Priority date Publication date Assignee Title
JP2871990B2 (en) * 1993-02-16 1999-03-17 日本電気株式会社 Magnetoresistive element thin film

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