JP3170186B2 - Resistance measuring method and device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for measuring resistance, and more particularly to a method and an apparatus suitable for measuring the resistance of a resistive element in a matrix circuit.

[0002]

2. Description of the Related Art Conventionally, various methods have been devised as methods for measuring the resistance of elements of an electric circuit. Typical methods include the voltage drop method and the bridge method. In the voltage drop method, a resistance value is measured by measuring a voltage drop that occurs at both ends of an element when a known current flows through the element to be measured.

In the bridge method, a side of a bridge is formed by an element to be measured and a resistor having a known resistance, as in a well-known Wheatstone bridge, and the resistance of the known resistor is adjusted. , The bridge is in an equilibrium state and the resistance value of the measuring element is measured.

[0004]

However, in the conventional resistance measuring method to which the voltage drop method or the bridge method described above is applied, the number of row-directional wirings and the number n of column-directional wirings arranged on a grid are different from each other. It has not been possible to measure the resistance of the resistive elements located at the intersections. Because
In such a complicated matrix circuit, since there are a large number of complicated current paths, when measuring the resistance of a certain element on this circuit, the wiring in the row direction and the wiring in the column direction are connected to the element. Even if the resistance value between the two was measured by the method described above, an accurate resistance value could not be measured. For this reason,
There was no other way to measure the resistance of each element, except to break the circuit and directly measure the resistance of the resistive element.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-mentioned conventional example. In a matrix circuit including a resistive element having a resistance value, the resistance value of each resistive element can be quickly and accurately determined without breaking the circuit. It is an object of the present invention to provide a resistance measuring method and device capable of measuring well.

[0006]

[0007]

The resistance measuring apparatus of the present invention for achieving the above object has the following arrangement. That is, a resistance measuring device for a matrix circuit in which a plurality of resistive elements are laid out in a matrix, wherein a connection means for grounding each row direction wiring of the matrix circuit via a resistive element having a predetermined resistance value; Switching means for applying a predetermined voltage to a selected one of the column-directional wirings of the matrix circuit and grounding the other wiring through a resistive element having a predetermined resistance value, and selecting the wiring by the switching means By switching the connection state of the column-directional wiring, the measuring means for measuring the voltage at the end of all of the column-directional wiring and the row-directional wiring in each of the obtained connection states, Calculating means for calculating a resistance value of each of the plurality of resistance elements based on the obtained voltage value.

Preferably, the matrix circuit includes m row-directional wirings, n column-directional wirings, and m × n resistive elements, and the calculating means is obtained by the measuring step. Based on the obtained voltage value, a node analysis equation, which is an m number of n-ary linear simultaneous equations, in which each resistance value of the resistance element is an unknown number, is created, and the resistance value of each of the plurality of resistance elements is calculated. Is calculated.

Preferably, the apparatus further comprises short-circuit means for short-circuiting both ends of each of the row wiring and the column wiring.

Preferably, the resistance value between the end of the row wiring and the end of the column wiring in a state where all ends of all the row wirings of the matrix circuit are short-circuited is Rxl. When the number of the row wirings is m, the value Rs of the resistive element for grounding the row wirings in the connection means is 0.001 × Rxl × m <Rs <0.05 × Rxl × m. Meet the conditions.

[0011]

[0012]

Preferred embodiments of the present invention will be described below with reference to the accompanying drawings. In the following embodiments, a matrix circuit to be measured is a circuit for driving a plurality of pixels, for example, and is used in an image display device or the like.

First, in a circuit network including a resistive element according to an embodiment of the present invention, a basic configuration of a resistance measuring device for measuring individual resistance values of the resistive element will be outlined, and then the detailed description will proceed.

The resistance measuring device according to the present embodiment is roughly divided into two parts. One of them is a contact probe for making electrical contact with each wiring on the substrate and a measuring unit for applying a voltage to each wiring and measuring the voltage. The other is an operation unit that calculates a resistance value from the voltage value measured by the measurement unit. Note that the calculation unit is realized by a computer device or the like including software for calculating the resistance value.

FIG. 1 is a diagram showing an overview of a measuring unit in the resistance measuring apparatus according to the present embodiment. In the figure, 3021
Is a probe needle, which makes direct contact with each wiring of a substrate to be measured as a measurement target. Reference numeral 3021 denotes a measurement circuit which controls application of a voltage to a substrate to be measured connected via a probe and collection of data. Measurement circuit 302
1 will be described later with reference to FIG. Reference numeral 3023 denotes a stage on which a substrate to be measured is placed. Stage 302
3 is further provided with an adjustment mechanism (not shown) for aligning the probe needle 3021 with the wiring of the substrate to be measured.

As will be described later, a matrix circuit having m wirings in the row direction and n wirings in the column direction is formed on the substrate to be measured. The probe needles 3021 are arranged m rows in the row direction and n rows in the column direction at a pitch corresponding to the column wiring and the row wiring of the circuit on the substrate to be measured.

FIG. 2 is a diagram for explaining a circuit of a substrate to be measured in the present embodiment. As shown in the figure, the circuit on the substrate to be measured has a matrix structure including m row-directional wirings and n column-directional wirings, and each row-directional wiring and column-directional wiring is a resistive element. It is connected. In the present embodiment, when the resistive elements are mounted on a matrix circuit as shown in FIG. 2, the resistance of each resistive element is measured individually.

FIG. 3 is a block diagram illustrating the configuration of the measuring circuit 3022. In the figure, reference numeral 3031 denotes an application pattern changeover switch, which controls application of a voltage to n column wirings based on a control signal. 30
A data selector 32 selects any one of the voltage measurement values obtained from each of the m row-directional wirings based on the control signal, and outputs the selected voltage measurement value. The data selector 3033 is a data selector for column-directional wiring, selects one of the voltage measurement values obtained from each of the n column-directional wirings based on a control signal, and outputs the selected voltage measurement value. .

Reference numeral 3034 denotes a measurement control computer, which comprises a CPU 3032a, a ROM 3034b for storing a control program for controlling the measurement circuit 3022, a RAM 3034bc for storing measurement data, and the like.
The measurement control computer 3034 includes an application pattern changeover switch 3031, data selectors 3032 and 303.
In addition to outputting a control signal for controlling 3, the measurement data obtained as a result of the measurement is stored, and the measurement result is output to a host computer.

Reference numeral 3035 denotes an A / D converter for row wiring, which converts the voltage value output from the data selector 3032 into digital data, and outputs this to the measurement control computer 3034 as measurement data. Similarly 3
Reference numeral 036 denotes an A / D converter for column wiring, which converts a voltage value output from the data selector 3033 into a digital signal, and outputs the digital value as measurement data to a measurement computer 3034.
Output to

Reference numerals 3037 and 3038 denote monitor resistances on the row direction wiring side and monitor resistances on the column direction wiring side, respectively. These monitor resistors have a known resistance value. Application pattern changeover switch 3031, data selector 3032 for row direction selection, data selector 30 for column direction selection
The connections of all 33 are switched by a control signal supplied from a measurement control computer 3034. 30
A power supply 39 supplies a predetermined voltage.

The procedure of the resistance measurement according to the present embodiment having the measuring section having the above configuration will be described below.

First, the first column direction wiring is selected by the application pattern changeover switch, and a predetermined voltage is applied from the power supply 3039. On the other hand, other column direction wiring
The monitor resistor 3038 is grounded, and the row wiring is also grounded via the monitor resistor 3037 (application pattern 1). In the above state, the data selector 3031
By switching 3032, the voltages at the ends of all the row and column wirings are measured. Measurement result is A / D
The data is converted into digital data by the converter 3035 and input to the measurement computer 3034.

Subsequently, a predetermined voltage is applied to the second column direction wiring by the application pattern changeover switch, and the other column direction wirings are grounded through the monitor resistor 3038,
Each of the row wirings is grounded through the monitor resistor 3037 (application pattern 2). In the above state, the terminal voltage of each wiring is measured as in the case of the application pattern 1. Thereafter, the terminal voltage of each wiring is measured in the same manner until the application pattern n.

The number of measurement data is the sum of the number m of row wirings and the number n of column wirings for one applied pattern.
That is, since there are m + n pieces, n × (m + n) pieces of measurement data are obtained for all patterns (one measurement).

The measurement data obtained as described above is stored in the RAM 3034c of the measurement control computer 3034. The stored measurement data is transferred to a computer of an arithmetic unit in order to perform a resistance value calculation, and the resistance value calculation is performed.

Hereinafter, the procedure for calculating the resistance value will be described using mathematical expressions. Note that, for simplicity of description, the above-mentioned method of calling the measurement data is formulated. The applied pattern k (k
Is a positive integer equal to or less than n) Voltage at the end of the i-th column direction wiring: Vx (i, k), (1 ≦ i ≦ n) Voltage at the end of the j-th row direction wiring: Vy (J, k) and (1 ≦ j ≦ m).

The resistance value of each resistive element, which becomes an unknown in the calculation of the resistance value, is expressed as follows. That is, Rd (i, j) where i represents the number of the column wiring in which the element is arranged, and j represents the number of the row wiring in which the element is arranged.

When formulating as described above, the resistive elements Rd (i, j) connected to the j-th row direction wiring,
(However, the following nodal equations can be created for i = 1,... N).

[0030]

(Equation 1)

Since the above nodal equations always hold for n applied patterns, n simultaneous equations can be created from the above. Since the number of resistive elements connected to the j-th row direction wiring is n, the unknown is n. Therefore, since n equations are established for n unknowns, the resistance value of the resistive element connected to the j-th row direction wiring can be estimated. By repeating the above calculation for each row-direction wiring from the first row to the m-th row, it is possible to estimate the resistance values of m × n resistive elements.

The above procedure is shown in the flowchart of FIG. FIG. 4 is a flowchart illustrating a resistance value measurement procedure according to the present embodiment. In FIG.
The processing of steps 1 to S7 is executed by the CPU 3034a of the computer 3034 for controlling the measuring section, and the control program for realizing these processing is a ROM.
3034b. The processing in step S8 indicates processing executed by the computer of the arithmetic unit.

In step S1, a counter k is set to one. Note that the counter k is formed on the RAM 3034c. In step S2, the application pattern changeover switch 3031 is controlled to set the application pattern k. In setting the application pattern k, the power supply 30 is connected to the k-th column direction wiring.
A voltage from 39 is applied, and the other column direction wiring is grounded via a monitor resistor 3038. Further, all the row wirings are grounded via the monitor resistor 3037.

Next, in step S3, the data selector 3032 is controlled to measure the terminal voltages of all the row wirings, and the measurement results are stored in the RAM 3034c. As a result, m data are obtained. Then, in step S4, the data selector 3033 is controlled to measure the terminal voltages of all the column wirings, and the measurement results are stored in the RAM 3034c. As a result, n data are obtained.

In step S5, it is determined whether or not the counter k is equal to the number of wirings n in the column direction. If not equal (ie, k <n), the process proceeds to step S6, one is added to the counter k, and the process returns to step S2. . If k = n, the process proceeds to step S7. As a result, the counter k obtains all the row direction terminal voltages and all the column direction terminal voltages for all the applied patterns 1 to n, and when n × (m + n) pieces of measurement data are obtained, the process proceeds to step S7. Is transferred to the computer of the arithmetic unit.

Step S8 is processing by the computer of the arithmetic unit, and calculates the resistance values of each of the n × m resistive elements from the n × m contact equations as described above.

Next, a brief description will be given of a computer device used in the arithmetic unit. FIG. 5 is a block diagram illustrating a configuration of a computer for an arithmetic unit used in the present embodiment. In the figure, reference numeral 4000 denotes the entire computing computer. As the computing computer 4000, a general personal computer or the like can be used.

Reference numeral 4001 denotes a CPU, and a ROM 4002
Alternatively, various controls are realized by executing a control program stored in the RAM 4003. Also, R
The AM 4003 provides a work area necessary for the CPU 4001 to execute processing. Reference numeral 4007 denotes a disk device, which is composed of, for example, a floppy disk driver. The control program stored in a storage medium such as a floppy disk is read from the disk device 4007, loaded into the RAM 4003, and executed by the CPU 4001. That is, the above-described calculation processing for calculating the resistance value can be provided by being stored in such a storage medium.

An interface 4004 transmits and receives data to and from the measurement control computer 3034. Reference numeral 4005 denotes a display, which performs various displays such as a display of a calculation result. 4006 is a keyboard,
Perform various operation inputs. In this embodiment, it is possible to start the resistance measurement from the keyboard 4006. 4
Reference numeral 008 denotes a bus, which is a data transfer line between the components.

Next, in order to confirm the measurement accuracy of the resistance measuring apparatus of the present embodiment described above, as shown in FIG.
The number of resistive elements in the column direction is 4, and the number of resistive elements in the row direction is 3
A specific example in which the resistance value of each element of the matrix circuit of FIG.

In this example, a resistive element Rd (i, j) (i = 1,... 4, j = 1,..., 3) having a resistance value of 2 kΩ is arranged. Also, the terminals of the row direction wiring and the column direction wiring are 1
It is grounded via a 0Ω monitor resistor (3037, 3038), and the wiring resistance is almost 0Ω.

Table 1 shows the voltage data measured by the measuring circuit when the resistance was measured for the matrix. In Table 1, for each applied pattern, the data arrangement is shown as the terminal voltage of the column wiring (in ascending order of the wiring number in the column direction) and the terminal voltage of the wiring in the row (ascending order of the wiring number in the row). (Unit V). Table 2 shows the result of resistance value calculation performed on the voltage data shown in Table 1. Each row and column corresponds to the row and column of each element on the matrix (unit: Ω).

[0043]

[Table 1]

[0044]

[Table 2]

[0045]

As described above, by using the present resistance estimating apparatus, it is possible to measure the resistance value of the resistive elements arranged in the matrix network very accurately without breaking the circuit.

<Second Embodiment> In the first embodiment, a voltage is applied to one terminal of the row direction wiring and the column direction wiring of the circuit to be measured, or a monitor resistor is connected. After both ends of the wiring are short-circuited, they may be connected in the same manner. In particular, this is very effective when the wiring resistance is large or when the size of the matrix is large, because the voltage gradient on the wiring is reduced.

<Third Embodiment> In the first embodiment, an example in which measurement is performed on a 4 × 3 matrix has been described.
The inventors have confirmed that the above-described resistance measurement is possible even for a larger matrix network. In particular, it was confirmed through the following experiment that the resistance can be estimated even when the column wiring and the row wiring forming the matrix have a certain resistance value as the wiring resistance.

First, 30,000 resistive elements having a known resistance value of 2 kΩ were arranged on the above-described matrix circuit composed of 300 column wirings and 100 row wirings, and a substrate to be measured was manufactured. . At this time, when the wiring resistance was measured, the wiring in the column direction was 9Ω and the wiring in the row direction was 4Ω, and both the column direction wiring and the row direction wiring could be formed uniformly on one of the wirings.

The resistance measurement apparatus described in the second embodiment was connected to the circuit to be measured (that is, measurement was performed by short-circuiting the terminals on both sides of each row-direction wiring and column-direction wiring), and the resistance was estimated. In this examination experiment, measurement was attempted by changing the resistance value of the monitor resistor connected to the row direction wiring in the measurement circuit described above in several ways. Table 3 shows the results. In Table 3,
From the left column, the value of the monitor resistance (hereinafter referred to as Rs),
The maximum and minimum values of the estimated resistance, the maximum error of the estimated value,
The average of the estimated values and the average error of the estimated values are shown.

[0051]

[Table 3]

As described above, the error in the resistance value calculated based on the value of the monitor resistance connected to the row-direction wiring of the measurement circuit described above changes. In particular, as the size of the monitor resistor increases, the error in the measured value tends to increase. The cause is related to the fact that the voltage effect due to the resistance of the wiring resistance is not included in the calculation. Particularly, when the value of the monitor resistor is large, the effect is large and the error of the measured value increases. The inventors think that it might be.

For this reason, in estimating the resistance of a matrix network having the above-described wiring resistance, a row-direction monitor resistance Rs that satisfies at least the following conditions is selected.
Preferably, a resistance measurement is performed.

0.001 × Rxl × m <Rs <0.05 × Rxl × m Here, Rxl is a short circuit between all the row wirings of the circuit to be measured and any one of the column wirings. It is the amount obtained by measuring the resistance. Hereinafter, this is called a line resistance. FIG. 7 is a diagram illustrating a method of measuring the line resistance Rxl. Therefore, there are n line resistances Rxl for the mxn matrix, but the average value of Rxl used in the above equation is used.

Here, an amount called Ryl is also defined as an amount obtained by reversing the relationship between the rows and columns in FIG. It is preferable that the monitor resistor 3038 in the column direction is provided to reduce measurement errors. Also, the monitor resistor 3037 in the row direction is
As an alternative, a voltage-current converter or an ammeter may be connected. However, since a voltage drop due to the internal resistance of the ammeter becomes a problem, it is not used here.

The reason for defining the lower limit of Rs in the above inequality is a problem of measurement accuracy. That is, if Rs is too small, the voltage drop there will be small,
This is because the accuracy required for estimating the resistance cannot be sufficiently obtained. Also, the upper limit is determined by an error due to the influence of the wiring resistance. However, even if the above conditions are satisfied, an error occurs if the wiring resistance of the measurement target is large. Therefore, as a circuit to be measured for resistance measurement, Rxl> Rh (column) Ryl> Rh (row) It is desirable that Here, Rh (column) is the wiring resistance of the column wiring, and Rh (row) is the wiring resistance of the row wiring.

As described above, according to the present embodiment, in a matrix circuit network including resistive elements, even if the matrix wiring has wiring resistance, the resistance value of each resistive element can be maintained without breaking the circuit. Can be accurately measured.

<Fourth Embodiment> The inventors of the present invention are a multi-electron source constituted by arranging a large number of surface conduction electron-emitting devices in a matrix on a substrate instead of the above-described resistive device, and an application thereof. I have been studying image display devices. In that case, the resistance measuring device of each of the above embodiments can be used as a part of a manufacturing device for manufacturing a display panel, specifically, as a manufacturing inspection device.

In the present embodiment, first, a manufacturing process of the display panel of the above-described image display device will be described, and then the manufacturing inspection device will be described in more detail.

(Structure and Manufacturing Method of Display Panel) Next, the structure and manufacturing method of the display panel of the image display device to which the present invention is applied will be described with reference to specific examples.

FIG. 8 is a perspective view of the display panel used in the embodiment, in which a part of the panel is cut away to show the internal structure.

In the figure, 1005 is a rear plate, 1006
Is a side wall, 1007 is a face plate, 1005
1007 form an airtight container for maintaining the inside of the display panel at a vacuum. When assembling an airtight container, it is necessary to seal the joints of each member to maintain sufficient strength and airtightness.For example, apply frit glass to the joints, and in air or nitrogen atmosphere, Sealing was achieved by baking at 400 to 500 degrees for 10 minutes or more. A method of evacuating the inside of the airtight container to a vacuum will be described later.

The rear plate 1005 has a substrate 1001
Is fixed, but the cold cathode device 1002 is provided on the substrate.
N × M are formed. (N and M are positive integers of 2 or more and are appropriately set according to the target number of display pixels. For example, in a display device for displaying high-definition television, N = 3000, M It is desirable to set a number equal to or greater than 1000. In the present embodiment, N = 3072 and M = 1024.)
The cold cathode elements are arranged in a simple matrix by M row-directional wirings 1003 and N column-directional wirings 1004. The portion constituted by 1001 to 1004 is called a multi-electron beam source. The manufacturing method and structure of the multi-electron beam source will be described later in detail.

In this embodiment, the multi electron beam source substrate 1001 is fixed to the rear plate 1005 of the airtight container.
01 has sufficient strength, the substrate 10 of the multi-electron beam source is used as a rear plate of the hermetic container.
01 itself may be used.

On the lower surface of the face plate 1007, a fluorescent film 1008 is formed. Since the present embodiment is a color display device, the fluorescent film 1008 has C
Phosphors of three primary colors of red, green and blue used in the field of RT are separately applied. The phosphor of each color is, for example, as shown in FIG.
(A), a black conductor 1010 is provided between stripes of the phosphor, which are separately applied in stripes. The purpose of providing the black conductor 1010 is to prevent the display color from shifting even if the electron beam irradiation position is slightly shifted, and to prevent the reflection of external light to prevent the display contrast from lowering. And preventing charge-up of the fluorescent film by the electron beam. Although graphite is used as a main component for the black conductor 1010, any other material may be used as long as it is suitable for the above purpose.

The method of applying the three primary color phosphors is not limited to the stripe arrangement shown in FIG. 9A, but may be, for example, a delta arrangement as shown in FIG. 9B. , Or any other array.

When a monochrome display panel is manufactured, a monochromatic phosphor material may be used for the phosphor film 1008, and a black conductive material is not necessarily used.

Also, a metal back 1009 known in the CRT field is provided on the surface of the fluorescent film 1008 on the rear plate side.
Is provided. The purpose of providing the metal back 1009 is
A part of the light emitted from the fluorescent film 1008 is specularly reflected to improve the light utilization rate, or the fluorescent film 1008
8 to protect it, to act as an electrode for applying an electron beam acceleration voltage, and to act as a conductive path for excited electrons of the fluorescent film 1008. The metal back 1009 was formed by forming a fluorescent film 1008 on the face plate substrate 1007, smoothing the surface of the fluorescent film, and vacuum-depositing Al (aluminum) thereon. Note that when a fluorescent material for low voltage is used for the fluorescent film 1008, the metal back 1009 is not used.

Although not used in the present embodiment, for the purpose of applying an acceleration voltage and improving the conductivity of the fluorescent film, a transparent material made of, for example, ITO is provided between the face plate substrate 1007 and the fluorescent film 1008. Electrodes may be provided.

Dx1 to Dxm, Dy1 to Dyn, and Hv are electric connection terminals having an airtight structure provided for electrically connecting the display panel to an electric circuit (not shown). Dx1 to Dxm are the row wirings 10 of the multi-electron beam source.
03, Dy1 to Dyn are the column direction wirings 1004 of the multi-electron beam source, and Hv is the metal back 1 of the face plate.
009 electrically.

In order to evacuate the inside of the hermetic container, after the hermetic container is assembled, an exhaust pipe (not shown) and a vacuum pump are connected, and the inside of the hermetic container is raised to the power of 10 −7 [T
orr]. Thereafter, the exhaust pipe is sealed, but a getter film (not shown) is formed at a predetermined position in the airtight container immediately before or after the sealing in order to maintain the degree of vacuum in the airtight container. The getter film is, for example, a film formed by heating and depositing a getter material containing Ba as a main component by a heater or high-frequency heating,
Due to the adsorbing action of the getter film, the inside of the airtight container is 1 × 10 −5 or 1 × 10 −7 [Torr].
Is maintained at a vacuum degree.

The basic configuration and manufacturing method of the display panel according to the present embodiment have been described above.

Next, a method of manufacturing the multi-electron beam source used for the display panel of the above embodiment will be described. The multi-electron beam source used in the image display device according to the present embodiment includes:
If the cold cathode device is an electron source with a simple matrix wiring,
There is no limitation on the material, shape or manufacturing method of the cold cathode device. Therefore, for example, a cold cathode device such as a surface conduction type emission device, an FE type, or an MIM type can be used.

However, in a situation where a display device having a large display screen and an inexpensive display device is required, among these cold cathode devices, a surface conduction type emission device is particularly preferable. That is, in the FE type, since the relative position and shape of the emitter cone and the gate electrode greatly affect the electron emission characteristics, extremely high-precision manufacturing technology is required, but this achieves a large area and a reduction in manufacturing cost. Is a disadvantageous factor. In the case of the MIM type, it is necessary to make the thicknesses of the insulating layer and the upper electrode thin and uniform, which is also a disadvantageous factor in achieving a large area and a reduction in manufacturing cost. On the other hand, since the surface conduction electron-emitting device has a relatively simple manufacturing method, it is easy to increase the area and reduce the manufacturing cost. The present inventors have also found that among the surface conduction electron-emitting devices, those in which the electron-emitting portion or its peripheral portion is formed of a fine particle film have particularly excellent electron-emitting characteristics and can be easily manufactured. Therefore, it can be said that it is most suitable for use in a multi-electron beam source of a high-luminance, large-screen image display device.

Therefore, in the display panel of the above embodiment, a surface conduction electron-emitting device in which the electron-emitting portion or its peripheral portion is formed of a fine particle film is used. Therefore, the basic configuration, manufacturing method and characteristics of a suitable surface conduction electron-emitting device will be described first, and then the structure of a multi-electron beam source in which many devices are arranged in a simple matrix will be described.

(Suitable Device Configuration and Manufacturing Method of Surface Conduction Type Emission Device) A typical configuration of a surface conduction type emission device in which an electron emission portion or its peripheral portion is formed from a fine particle film is a flat type or a vertical type. Kinds are given.

(Planar surface conduction electron-emitting device) First, the structure and manufacturing method of a plane surface conduction electron-emitting device will be described. FIG. 10 is a plan view (a) and a cross-sectional view (b) for explaining the configuration of the planar surface conduction electron-emitting device. In the figure, 1101 is a substrate, 1102 and 1103 are device electrodes, 1104 is a conductive thin film, 1105
Are electron-emitting portions formed by an energization forming process;
Reference numeral 113 denotes a thin film formed by the activation process.

As the substrate 1101, for example, various glass substrates such as quartz glass and blue plate glass, various ceramics substrates such as alumina, or an insulating layer made of, for example, SiO 2 is laminated on the various substrates described above. Substrate or the like can be used.

The device electrodes 1102 and 1103 provided on the substrate 1101 in parallel with the substrate surface are formed of a conductive material. For example, N
i, Cr, Au, Mo, W, Pt, Ti, Cu, Pd,
The material may be appropriately selected from metals such as Ag and the like, alloys of these metals, metal oxides such as In 2 O 3 —SnO 2, and semiconductors such as polysilicon. An electrode can be easily formed by using a combination of a film forming technique such as vacuum evaporation and a patterning technique such as photolithography and etching. However, the electrode can be formed by other methods (for example, printing technique). I can't wait.

The shapes of the device electrodes 1102 and 1103 are appropriately designed according to the application purpose of the electron-emitting device.
Generally, the electrode spacing L is usually designed by selecting an appropriate value from the range of several hundreds of angstroms to several hundreds of micrometers. It is in the range of ten micrometers. Further, regarding the thickness d of the device electrode,
Usually, an appropriate numerical value is selected from the range of several hundred angstroms to several micrometers.

A fine particle film is used for the conductive thin film 1104. The fine particle film mentioned here is a film containing many fine particles as a constituent element (including an island-shaped aggregate).
I mean If you examine the microparticle film microscopically, usually
A structure in which the individual fine particles are spaced apart, a structure in which the fine particles are adjacent to each other, or a structure in which the fine particles overlap each other is observed.

The particle diameter of the fine particles used in the fine particle film is in the range of several Angstroms to several thousand Angstroms, but preferably in the range of 10 Angstroms to 200 Angstroms. Further, the thickness of the fine particle film is appropriately set in consideration of various conditions described below. That is, the device electrode 11
02, or 1103, conditions necessary for satisfactorily performing energization forming described later, conditions necessary for setting the electric resistance of the fine particle film itself to an appropriate value described later. , And so on.

Specifically, the setting is made in the range of several Angstroms to several thousand Angstroms, and the most preferable one is between 10 Angstroms and 500 Angstroms.

Materials that can be used to form the fine particle film include, for example, Pd, Pt, Ru, Ag,
Au, Ti, In, Cu, Cr, Fe, Zn, Sn, T
a, W, Pb, and other metals, PdO, S
Oxides such as nO2, In2 O3, PbO, Sb2 O3, etc .; HfB2, ZrB2, LaB6, C
Borides such as eB6, YB4, GdB4, etc., TiC, ZrC, HfC, TaC, SiC, WC,
And other carbides, TiN, ZrN, Hf
Nitrides such as N, etc., semiconductors such as Si, Ge, etc., carbon, and the like are listed, and are appropriately selected from these.

As described above, the conductive thin film 1104 is formed of a fine particle film.
It was set to be included in the range of 10 3 to 10 7 [Ohm / sq].

The conductive thin film 1104 and the device electrode 11
Since it is desirable that the wires 02 and 1103 be electrically connected well, they have a structure in which a part of each overlaps with the other. In the example of FIG.
Although the substrate, the device electrode, and the conductive thin film are stacked in this order from the bottom, in some cases, the substrate, the conductive thin film, and the device electrode may be stacked in this order from the bottom.

The electron emitting portion 1105 is a crack-like portion formed in a part of the conductive thin film 1104, and has an electrically higher resistance than the surrounding conductive thin film. The crack is formed by performing a later-described energization forming process on the conductive thin film 1104. Fine particles having a particle size of several Angstroms to several hundred Angstroms may be arranged in the crack. Since it is difficult to accurately and accurately show the actual position and shape of the electron-emitting portion, they are schematically shown in FIG.

The thin film 1113 is a thin film made of carbon or a carbon compound, and covers the electron emitting portion 1105 and its vicinity. The thin film 1113 is formed by performing an energization activation process described later after the energization forming process.

The thin film 1113 is made of any one of single crystal graphite, polycrystalline graphite, and amorphous carbon, or a mixture thereof, and has a thickness of 500 [Å] or less, but 300 [Å] or less. Is more preferred.

Since it is difficult to accurately show the actual position and shape of the thin film 1113, it is schematically shown in FIG. Also, in the plan view (a), the thin film 11
13 shows a device in which a part of the device 13 is removed.

The basic structure of the preferred element has been described above. In the embodiment, the following element is used.

That is, blue glass was used for the substrate 1101, and Ni thin films were used for the device electrodes 1102 and 1103. The thickness d of the device electrode was 1000 [angstrom], and the electrode interval L was 2 [micrometer].

Pd or P is used as the main material of the fine particle film.
Using dO, the thickness of the fine particle film was set to about 100 [angstrom], and the width W was set to 100 [micrometer].

Next, a description will be given of a method of manufacturing a suitable flat surface conduction electron-emitting device. (A) to (d) of FIG.
Is a cross-sectional view for explaining a manufacturing process of the surface conduction electron-emitting device, and the notation of each member is the same as FIG.

1) First, as shown in FIG. 11A, device electrodes 1102 and 1103 are formed on a substrate 1101.

Before forming, the substrate 1
After sufficiently washing 101 with a detergent, pure water and an organic solvent,
The material of the device electrode is deposited. (As a deposition method, for example, a vacuum film forming technique such as a vapor deposition method or a sputtering method may be used.) Thereafter, the deposited electrode material is patterned by using a photolithography / etching technique, and as shown in FIG. The illustrated pair of device electrodes (1102 and 110)
Form 3).

2) Next, a conductive thin film 1104 is formed as shown in FIG.

In the formation, first, an organic metal solution is applied to the substrate (a), dried, heated and baked to form a fine particle film, and then patterned into a predetermined shape by photolithography and etching. . here,
The organic metal solution is a solution of an organic metal compound whose main element is a material of fine particles used for the conductive thin film (specifically, Pd is used as a main element in the present embodiment. In the embodiment, coating is performed. As the method, a dipping method was used, but other methods such as a spinner method and a spray method may be used.)

As a method for forming a conductive thin film made of a fine particle film, a method other than the method of applying an organometallic solution used in the present embodiment, for example, a vacuum evaporation method, a sputtering method, or a chemical vapor deposition method Method may be used.

3) Next, as shown in FIG. 10C, a forming power supply 1110 supplies the device electrodes 1102 and 110
3, an appropriate voltage is applied, and an energization forming process is performed to form the electron-emitting portion 1105.

The energization forming treatment is to energize the conductive thin film 1104 made of a fine particle film, to appropriately break, deform, or alter a part of the conductive thin film 1104, thereby changing the structure to a structure suitable for emitting electrons. This is the process that causes A portion of the conductive thin film made of the fine particle film that has been changed to a structure suitable for emitting electrons (that is, the electron emitting portion 110
In 5), an appropriate crack is formed in the thin film.
Note that the electrical resistance measured between the device electrodes 1102 and 1103 is significantly increased after the formation of the electron emission portions 1105 as compared to before the formation.

FIG. 12 shows an example of an appropriate voltage waveform applied from the forming power supply 1110 in order to explain the energization method in more detail. When forming a conductive thin film made of a fine particle film, a pulse-like voltage is preferable. In the case of this embodiment, a triangular wave pulse having a pulse width T1 is continuously generated at a pulse interval T2 as shown in FIG. Was applied. At that time, the peak value Vpf of the triangular wave pulse was sequentially increased. In addition, monitor pulses Pm for monitoring the state of formation of the electron-emitting portion 1105 were inserted at appropriate intervals between the triangular-wave pulses, and the current flowing at that time was measured by the ammeter 1111.

In the embodiment, for example, in a vacuum atmosphere of about 10 −5 [torr], for example, the pulse width T1 is set to 1 [millisecond], the pulse interval T2 is set to 10 [millisecond], and the peak value Vpf is set. The voltage was increased by 0.1 [V] for each pulse. Then, the monitor pulse Pm was inserted at a rate of one every time five triangular waves were applied. The monitor pulse voltage Vpm was set to 0.1 [V] so as not to adversely affect the forming process. Then, when the electric resistance between the element electrodes 1102 and 1103 becomes 1 × 10 6 [ohm], that is, the current measured by the ammeter 1111 when the monitor pulse is applied becomes 1 × 10 −7 [A] or less. At this stage, the energization related to the forming process was terminated.

The above method is a preferable method for the surface conduction electron-emitting device of the present embodiment. For example, the design of the surface conduction electron-emitting device such as the material and film thickness of the fine particle film or the element electrode interval L is changed. In such a case, it is desirable to appropriately change the energization conditions accordingly.

4) Next, as shown in FIG.
The device electrodes 1102 and 1103 are supplied from the activation power source 1112.
During the energization activation process, apply an appropriate voltage during
Improve electron emission characteristics.

The energization activation process is a process of energizing the electron emitting portion 1105 formed by the energization forming process under appropriate conditions to deposit carbon or a carbon compound in the vicinity thereof. (In this figure,
The deposit made of carbon or carbon compound is
This is schematically shown as In addition, by performing the energization activation process, the emission current at the same applied voltage can be typically increased by 100 times or more as compared to before the activation process.

Specifically, 10 minus the fourth power to 1
By applying a voltage pulse periodically in a vacuum atmosphere within the range of 0 to the fifth power [torr], carbon or a carbon compound originating from an organic compound existing in the vacuum atmosphere is deposited. The deposit 1113 is any of single crystal graphite, polycrystalline graphite, and amorphous carbon, or a mixture thereof, and has a thickness of 500.
[Angstrom] or less, more preferably 300 [angstrom] or less.

FIG. 13A shows an example of an appropriate voltage waveform applied from the activation power supply 1112 in order to explain the energization method in more detail. In the present embodiment, the energization activation process is performed by applying a rectangular wave of a constant voltage periodically, but specifically, the rectangular wave voltage Vac is 14
[V], pulse width T3 is 1 [millisecond], pulse interval T4
Was set to 10 [milliseconds]. The above-described energization conditions are preferable conditions for the surface conduction electron-emitting device of the present embodiment, and when the design of the surface conduction electron-emitting device is changed,
It is desirable to change the conditions accordingly.

An anode electrode 1114 shown in FIG. 11D for capturing an emission current Ie emitted from the surface conduction electron-emitting device is connected to a DC high voltage power supply 1115 and an ammeter 1116. (Note that the substrate 1101
When the activation process is performed after the display panel is incorporated into the display panel, the phosphor screen of the display panel is connected to the anode electrode 1114.
Used as While the voltage is applied from the activation power supply 1112, the emission current Ie is measured by the ammeter 1116 to monitor the progress of the energization activation process.
12 is controlled. FIG. 13B shows an example of the emission current Ie measured by the ammeter 1116. When the pulse voltage is started to be applied from the activation power supply 1112, the emission current Ie increases with the passage of time, but eventually saturates. And hardly increase. As described above, when the emission current Ie is substantially saturated, the application of the voltage from the activation power supply 1112 is stopped, and the energization activation process ends.

The above-mentioned energization conditions are preferable conditions for the surface conduction electron-emitting device of the present embodiment, and when the design of the surface conduction electron-emitting device is changed, the conditions should be changed accordingly. desirable.

As described above, the planar surface conduction electron-emitting device shown in FIG. 11E was manufactured.

(Vertical Surface Conduction Emitting Element) Next, another typical structure of a surface conduction electron emitting element in which the electron emitting portion or its periphery is formed of a fine particle film, that is, a vertical surface conduction electron emitting element. The configuration of the element will be described.

FIG. 14 is a schematic cross-sectional view for explaining the basic structure of a vertical type. In FIG.
202 and 1203 are device electrodes, 1206 is a step forming member, 1204 is a conductive thin film using a fine particle film, 1205
Are electron-emitting portions formed by an energization forming process;
213 is a thin film formed by the activation process.

The difference between the vertical type and the flat type described above is that one of the device electrodes (1202) is provided on the step forming member 1206, and the conductive thin film 1204 is provided on the side surface of the step forming member 1206. It is in the point of coating. Therefore, the element electrode interval L in the planar type shown in FIG.
Is the step height L of the step forming member 1206 in the vertical type.
s. In addition, the substrate 1201, the element electrode 1
202 and 1203, conductive thin film 1 using fine particle film
204, the materials listed in the description of the planar type can be used in the same manner. For the step forming member 1206, an electrically insulating material such as SiO2 is used.

Next, a method of manufacturing a vertical surface conduction electron-emitting device will be described. FIGS. 15A to 15F are cross-sectional views for explaining a manufacturing process.
Same as 4.

1) First, as shown in FIG.
An element electrode 1203 is formed over a substrate 1201.

2) Next, as shown in FIG. 13B, an insulating layer for forming a step forming member is laminated. The insulating layer may be formed by laminating SiO2 by sputtering, for example, but other film forming methods such as vacuum deposition or printing may be used.

3) Next, as shown in FIG. 13C, an element electrode 1202 is formed on the insulating layer.

4) Next, as shown in FIG. 14D, a part of the insulating layer is removed by using, for example, an etching method to expose the element electrode 1203.

5) Next, as shown in FIG. 14E, a conductive thin film 1204 using a fine particle film is formed. For the formation, as in the case of the flat type, a film forming technique such as a coating method may be used.

6) Next, as in the case of the flat type, the energization forming process is performed to form an electron emission portion (the same process as the flat type energization forming process described with reference to FIG. 11C). Just do it.)

7) Next, similarly to the case of the above-mentioned flat type, an activation process is performed to deposit carbon or a carbon compound in the vicinity of the electron emission portion (the flat type current described with reference to FIG. The same processing as the activation processing may be performed).

As described above, a vertical surface conduction electron-emitting device shown in FIG. 15F was manufactured.

(Characteristics of Surface Conduction Emission Device Used in Display Device) The element structure and manufacturing method of the planar and vertical surface conduction electron-emitting devices have been described above. Next, the characteristics of the device used in the display device will be described. Is described.

FIG. 16 shows typical examples of (emission current Ie) versus (device applied voltage Vf) characteristics and (device current If) versus (device applied voltage Vf) characteristics of the device used in the display device. . Note that the emission current Ie is significantly smaller than the element current If, and it is difficult to show the same current on the same scale.
Since these characteristics are changed by changing design parameters such as the size and shape of the element, the two graphs are shown in arbitrary units.

The element used in the display device has the following three characteristics regarding the emission current Ie.

First, a certain voltage (this is referred to as a threshold voltage Vth
When a voltage of the above magnitude is applied to the element, the emission current Ie sharply increases. On the other hand, at a voltage lower than the threshold voltage Vth, the emission current Ie is hardly detected. That is, it is a non-linear element having a clear threshold voltage Vth with respect to the emission current Ie.

Secondly, since the emission current Ie changes depending on the voltage Vf applied to the element, the emission current Ie varies with the voltage Vf.
The magnitude of e can be controlled.

Third, since the response speed of the current Ie emitted from the element is faster with respect to the voltage Vf applied to the element, the amount of charge of the electrons emitted from the element depends on the length of time during which the voltage Vf is applied. Can control.

Because of the above-mentioned characteristics, the surface conduction electron-emitting device could be suitably used for a display device. For example, in a display device in which a large number of elements are provided corresponding to pixels of a display screen, if the first characteristic is used, display can be performed by sequentially scanning the display screen. That is,
The driving element has a threshold voltage Vt according to a desired light emission luminance.
h or higher, and a voltage lower than the threshold voltage Vth is applied to the non-selected elements. By sequentially switching the elements to be driven, the display screen can be sequentially scanned and displayed.

Further, since the emission luminance can be controlled by using the second characteristic or the third characteristic, gradation display can be performed.

(Structure of a multi-electron beam source in which a large number of elements are arranged in a simple matrix) Next, a structure of a multi-electron beam source in which the above-described surface conduction electron-emitting elements are arranged on a substrate and arranged in a simple matrix will be described.

FIG. 17 is a plan view of the multi-electron beam source used for the display panel of FIG. On the substrate, surface conduction type emission elements similar to those shown in FIG. 10 are arranged.
And a column-directional wiring electrode 1004 for wiring in a simple matrix. An insulating layer (not shown) is formed between the row-directional wiring electrodes 1003 and the column-directional wiring electrodes 1004 where they intersect, so that electrical insulation is maintained.

FIG. 1 is a sectional view taken along the line AA ′ of FIG.
FIG.

Incidentally, the multi-electron source having such a structure is as follows.
After previously forming a row direction wiring electrode 1003, a column direction wiring electrode 1004, an interelectrode insulating layer (not shown), and a device electrode of a surface conduction type emission device and a conductive thin film on a substrate,
Row direction wiring electrode 1003 and column direction wiring electrode 1004
The device was manufactured by supplying current to each element through the device and performing an energization forming process and an energization activation process.

The characteristics of each surface conduction electron-emitting device are greatly affected by the above-described energization forming process and energization activation process. In particular, the energization forming process is a process of energizing the conductive thin film 1104 made of a fine particle film, and appropriately breaking, deforming, or altering a part of the conductive thin film 1104 to change the structure to a structure suitable for electron emission. Therefore, in the conductive thin film made of the fine particle film, in a portion changed to a structure suitable for emitting electrons (that is, the electron emitting portion 1105), it is previously determined that an appropriate crack is formed in the thin film. I also mentioned.

Since the electron emission characteristics of each surface conduction electron-emitting device are also related to the state of formation of the cracks, the electron emission characteristics in one display panel have a strong correlation with the energization forming process. Further, the degree of the energization forming process is greatly influenced by the resistance value of each element. Therefore, uniform forming can be achieved by controlling the forming based on the resistance value of each element of the multi-electron source.

FIG. 19 is a block diagram showing an electron source manufacturing apparatus according to the fourth embodiment. In the same figure, reference numeral 5000 denotes a multi-electron source in a conductive thin film state, which becomes a multi-electron source 5001 after crack formation by being subjected to an energization forming process.

In this manufacturing apparatus, the multi-electron source 5000 is connected to the resistance measuring device 5010 prior to the energization forming process.
And the resistance of each element of the multi-electron source is measured. The measurement unit 5011 is as shown in FIG. 1, and the electron source 5000 is arranged on the stage 3020. By the measuring unit 5011 and the calculating unit 5012,
When the resistance value of each element of the electron source 5000 is obtained, the resistance value data is transferred to the energization forming processing device 5020.

Thereafter, the multi-electron source 5000 is loaded into the energization forming device 5020 and subjected to the forming process. Here, the energization forming processing device 5020 controls the application of the forming voltage based on the transferred resistance value data.

An example of the forming voltage application control will be described. Here, the forming is performed by operating the forming voltage based on the measured resistance value of each element so that the power supplied to each element at the time of forming is constant.

FIG. 20 is a diagram for explaining a forming process in the electron source manufacturing apparatus of the present embodiment. As shown in the figure, when forming an element group connected to a certain row-direction wiring, a forming pulse having a uniform peak value is applied to the row-direction wiring. Then, a forming pulse having a polarity opposite to that of the row wiring is applied to the column wiring. At this time, a forming pulse having a polarity opposite to that of the row direction wiring is applied to each column direction wiring. At this time, the peak value of the forming pulse applied to each column-direction wiring is adjusted so that each element is formed with the same forming power according to the resistance value of the element connected to the currently forming row. The crest value is controlled for each direction wiring.

Here, the forming power is represented by (the square of the applied voltage) / (the initial resistance value of the element).

As described above, since the application of the forming voltage is controlled according to the variation of the element resistance of each multi electron source, it is possible to achieve uniform forming.

[0145]

As described above, according to the present invention, in a matrix circuit including a resistive element, the individual element resistances and the node voltage between the element resistances and the wiring can be quickly and accurately determined without breaking the circuit. Can be measured.

Further, according to the present invention, in the process of manufacturing a multi-electron source, it is possible to perform an appropriate forming process based on the individual element resistance, and to manufacture a multi-electron source with stable quality. Becomes

[0147]

[Brief description of the drawings]

FIG. 1 is a diagram showing an overview of a measuring unit in a resistance measuring apparatus according to the present embodiment.

FIG. 2 is a diagram illustrating a circuit of a substrate to be measured in the present embodiment.

FIG. 3 is a block diagram illustrating a configuration of a measurement circuit 3022.

FIG. 4 is a flowchart illustrating a resistance value measurement procedure according to the embodiment.

FIG. 5 is a block diagram illustrating a configuration of a computer for an arithmetic unit used in the present embodiment.

FIG. 6 is a diagram showing a matrix circuit in which the number of resistive elements in a column direction is four and the number of resistive elements in a row direction is three;

FIG. 7 is a diagram illustrating a method of measuring a line resistance Rxl.

FIG. 8 is a perspective view of a display panel using a multi-electron source according to the embodiment.

FIG. 9 is a diagram illustrating an arrangement of a phosphor and a black conductive material on a face plate of the display panel of FIG. 8;

FIGS. 10A and 10B are a plan view and a cross-sectional view, respectively, for explaining the configuration of a planar surface conduction electron-emitting device.

FIG. 11 is a diagram illustrating a manufacturing process of the surface conduction electron-emitting device of FIG.

FIG. 12 is a diagram illustrating an example of an appropriate voltage waveform applied from a forming power supply 1110.

FIG. 13 is a diagram illustrating an activation process for a surface conduction electron-emitting device.

FIG. 14 is a schematic sectional view of a vertical surface conduction electron-emitting device.

FIG. 15 is a view for explaining a manufacturing process of the vertical surface conduction electron-emitting device shown in FIG. 14;

FIG. 16 shows (emission current Ie) of an element used for a display device.
Pair (device applied voltage Vf) characteristics and (device current If)
FIG. 9 is a diagram showing a typical example of a pair (element applied voltage Vf) characteristic.

FIG. 17 is a diagram illustrating a multi-electron source applied to the display panel of FIG.

18 is a diagram illustrating a cross section taken along line AA ′ of the multi-electron source in FIG.

FIG. 19 is a block diagram illustrating an electron source manufacturing apparatus according to a fourth embodiment.

FIG. 20 is a diagram illustrating a forming process in the electron source manufacturing apparatus of the present embodiment.

[Explanation of symbols]

 3031 Application pattern changeover switch 3032, 3033 Data selector 3034 Measurement control computer 3035, 3036 A / D converter 3037, 3038 Monitor resistor 3039 Power supply

──────────────────────────────────────────────────続 き Continuation of front page (56) References JP-A-8-334535 (JP, A) JP-A-63-142915 (JP, A) JP-A-61-145464 (JP, A) JP-A 57-142 207870 (JP, A) JP-A-49-115374 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) G01R 27/02 H01J 9/02 H01J 9/42

Claims (10)

(57) [Claims] 1. A resistance measuring device for a matrix circuit in which a plurality of resistive elements are laid out in a matrix, wherein connection means for grounding each row direction wiring of the matrix circuit via a resistive element having a predetermined resistance value. Switching means for applying a predetermined voltage to one selected wiring in the column direction wiring of the matrix circuit, and grounding the other wiring through a resistive element having a predetermined resistance value; A switching unit that switches a connection state of the column-directional wiring by switching a selection of a wiring, and that measures a voltage at an end of all of the column-directional wiring and the row-directional wiring in each of all obtained connection states; Calculating means for calculating the resistance value of each of the plurality of resistance elements based on the voltage value obtained by the means. 2. The matrix circuit includes m row wirings and n column wirings, and m × n resistive elements, and the calculating unit calculates a voltage value obtained in the measuring step. Based on the above, a node analysis equation, which is m n-ary linear simultaneous equations, in which the resistance value of each of the resistance elements is an unknown number, is created, and the resistance value of each of the plurality of resistance elements is calculated. The resistance measuring device according to claim 1, wherein: 3. The resistance measuring apparatus according to claim 1, further comprising a short-circuit means for short-circuiting both ends of each of the row wiring and the column wiring. 4. A resistance value between the end of the row wiring and the end of the column wiring in a state where all ends of all the row wirings of the matrix circuit are short-circuited, Rxl, and the row wiring. Is the number Rs of the resistive element for grounding the row-directional wiring in the connection means, where m is
The resistance measuring apparatus according to any one of claims 1 to 3, wherein the following condition is satisfied: 0.001 x Rxl x m <Rs <0.05 x Rxl x m. 5. A resistance measuring method for a matrix circuit in which a plurality of resistive elements are laid out in a matrix, wherein a connection step of grounding each row-directional wiring of the matrix circuit via a resistive element having a predetermined resistance value. A switching step of applying a predetermined voltage to a selected one of the column-directional wirings of the matrix circuit and grounding the other wiring via a resistive element having a predetermined resistance value; The connection state of the column-directional wiring is switched by switching the selection of the wiring according to, a measuring step of measuring an end voltage for all of the column-directional wiring and the row-directional wiring in each of the obtained connection states; Calculating a resistance value of each of the plurality of resistance elements based on the voltage value obtained in the measurement step. Method. 6. The matrix circuit includes m row-directional wirings, n column-directional wirings, and m × n resistive elements, and in the calculating step, a voltage value obtained in the measuring step is used. Based on the above, a node analysis equation, which is m n-ary linear simultaneous equations, in which the resistance value of each of the resistance elements is an unknown number, is created, and the resistance value of each of the plurality of resistance elements is calculated. The resistance measuring method according to claim 5, wherein: 7. The resistance measuring method according to claim 5, further comprising a short-circuiting step of short-circuiting both ends of each of the row direction wiring and the column direction wiring. 8. A resistance value between an end of a row wiring and an end of a column wiring in a state in which all ends of all the row wirings of the matrix circuit are short-circuited, and the resistance value of the row wiring is Rxl. Is the number Rs of the resistive element for grounding the row direction wiring in the connection step,
8. The resistance measuring method according to claim 5, wherein the following condition is satisfied: 0.001 × Rxl × m <Rs <0.05 × Rxl × m. 9. A resistance measuring apparatus used in forming processing for forming an electron emitting portion in a multi-electron source having a plurality of electron emitting elements wired in a matrix, wherein A measuring unit that measures individual resistance values of the plurality of electron-emitting devices by the resistance measuring device according to any one of the above, and a measurement result obtained by the measuring unit, and a control unit that controls application of a forming voltage in the forming process.
Resistor, characterized in that it comprises a providing means for providing for
Anti-measuring device. 10. A resistance measuring method used for forming processing for forming an electron-emitting portion in a multi-electron source having a plurality of electron-emitting devices wired in a matrix. The resistance measuring device according to any one of the above, a measurement step of measuring individual resistance values of the plurality of electron-emitting devices, and a measurement result of the measurement step, a control unit that controls application of a forming voltage in the forming process.
Providing a resistance measurement method.