JP3168811B2 - Thin film photoelectric conversion device and method of manufacturing the same - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin-film photoelectric conversion device comprising a thin-film photoelectric conversion element in which a thin-film photoelectric conversion layer is formed together with an electrode layer on a flexible insulating substrate, and a method of manufacturing the same.

[0002]

2. Description of the Related Art As a thin-film photoelectric conversion element for converting light into electric energy using a semiconductor junction, for example, as known in Japanese Patent Publication No. 5-72113, a back electrode layer, a photoelectric conversion layer, In some cases, a transparent electrode layer is patterned before forming the next layer and sequentially formed while separating each layer to form a series connection structure, in which light is incident from the side opposite to the substrate. Ag, C
In order to form a module by connecting each other by soldering a foil such as u or bonding a conductive tape. After connection between the unit elements, for example, as known in Japanese Patent Publication No. 5-59591, the front and back surfaces are covered with a protective film or the like to form a module, thereby removing the influence of moisture and gas from the outside air. And
On the other hand, a photoelectric conversion element that uses a flexible substrate, such as a heat-resistant polymer film, instead of a rigid glass plate, can be installed on a curved surface, and is lightweight and easy to handle. It has been noted as having the advantage of.

[0003]

However, a conventional thin film photoelectric conversion device including a thin film photoelectric conversion element using a flexible substrate has the following problems. (1) Since the connection between the elements is performed on the surface on the light incident side, the surface cannot be protected until the connection between the elements is completed. In many cases, device destruction occurs during device characteristic measurement.

(2) When the connection between the elements is performed by soldering or bonding of a conductive tape, defects are likely to occur due to poor soldering or reduced adhesive strength of the conductive tape, and the soldering process tends to be complicated. is there. (3) When the polymer film substrate is extremely thin, the so-called stiffness is weak, and handling after cutting into sub-module dimensions is troublesome.

In order to solve the problem (1), Japanese Patent Application No. 5-220870 filed by the present applicant discloses a method for connecting a plurality of photoelectric conversion elements formed on a flexible substrate. A thin-film photoelectric conversion device using an electrode layer on the back surface of a substrate connected to an electrode layer on the front surface through a through hole in the substrate is described. An object of the present invention is to provide a thin-film photoelectric conversion device and a method of manufacturing the same, which can solve all of the above-described problems by using a structure in which such connection between elements is performed on the back side of a substrate.

[0006]

In order to achieve the above-mentioned object, the present invention provides a flexible insulating substrate having a first electrode on a substrate side with a semiconductor layer which is a photoelectric conversion layer sandwiched on one surface of the substrate. layer,
A transparent second electrode layer is provided on the opposite side, and a third electrode layer is provided on the other surface of the substrate, and the third electrode layer is connected through the second electrode layer and the substrate, the first electrode layer, and the semiconductor layer. Through the hole, the first electrode layer is connected by a conductor substantially insulated from the first electrode layer, and the third electrode layer is separated from the region connected to the second electrode layer by the first electrode layer and at least the substrate. In a thin-film photoelectric conversion device comprising a thin-film photoelectric conversion element connected by a conductor substantially insulated from a region of the second electrode layer opposed to the first electrode layer and the semiconductor layer through the through-hole, It is assumed that a protective coating is provided on the side opposite to the substrate of the second electrode layer. It is preferable that the protective coating covers the side surface of the thin-film photoelectric conversion element until it reaches the substrate surface. The protective coating is a transparent insulating film that prevents moisture permeation, and the transparent insulating film that prevents moisture permeation is SiN _x , SiO _x , SiO
_{x N y, SiC x O y} , amorphous SiN _x: H, amorphous S
iO _x : H, amorphous SiO _x N _y , amorphous SiC _x O _y
And amorphous SiC _x : H. The protective coating is preferably made of a silicone resin or an adhesive resin that softens at high temperatures. The protective coating consists of a transparent insulating film and a resin layer filling the space between the film and the photoelectric conversion element, and the resin layer filling the space between the transparent insulating film and the thin film photoelectric conversion element is softened at a high temperature. It is better to be made of a conductive resin. It is effective that the softening temperature of the adhesive resin used above is 150 ° C. or lower. It is preferable that the third electrode layer of the thin-film photoelectric conversion element and the metal wiring are connected by brazing or that the third electrode layer is connected to a wiring made of a conductive wire resin. In that case, it is effective that the curing temperature of the conductive resin is 150 ° C. or lower.

A method for manufacturing a thin film photoelectric conversion device according to the present invention
A first electrode layer is provided on the substrate side and a transparent second electrode layer is provided on the other side of the flexible insulating substrate, with the semiconductor layer being a photoelectric conversion layer sandwiched on one surface of the flexible insulating substrate. A three-electrode layer is provided, the third electrode layer is connected to the second electrode layer and the substrate, through a connection hole passing through the first electrode layer and the semiconductor layer, by a conductor substantially insulated from the first electrode layer, The region of the three-electrode layer, which is separated from the region connected to the second electrode layer, faces the first electrode layer and at least the connection hole penetrating the substrate, with the first electrode layer and the semiconductor layer interposed therebetween. A film is commonly contacted with a plurality of third electrode layer-side surfaces of the thin film photoelectric conversion element connected by a conductor substantially insulated from the second electrode layer region, and covers the second electrode layer-side surface After filling the adhesive resin between the transparent insulating film and the film, the third electrode layer A step of peeling the film is intended to include a step of connecting the wiring to the third electrode layer exposed after the step. Alternatively, a step of forming a plurality of element regions having a first electrode layer on the substrate side and a second electrode layer on the opposite side with a semiconductor layer which is a photoelectric conversion layer sandwiched on one surface of a flexible insulating substrate. A step of opening a first connection hole reaching the second electrode layer through the substrate, the first electrode layer and the semiconductor layer, and a step of opening a second connection hole reaching the first electrode layer through the substrate; Contacting one end of the conductor substantially insulated by the insulator with the first electrode layer through the connection hole, and exposing the other end to the other surface of the substrate; and opposing the second connection hole. Contacting one end of the conductor substantially insulated from the second electrode layer to the first electrode layer and exposing the other end to the other surface of the substrate, and contacting the film in common with the other surfaces of the plurality of substrates. Between the transparent insulating film covering the surface on the second electrode layer side and the film. After filling the is intended to include a step of connecting the steps of peeling a film of the substrate other side is brought into contact with the wiring made of a conductive resin to the exposed portion of the conductor leading the connection hole. In these cases, after forming the wiring, it is effective to provide a weather-resistant film on the surface opposite to the transparent insulating film via an adhesive resin layer covering the wiring.

[0008]

The connection between the electrode layer of the photoelectric conversion region formed on one surface of the flexible insulating substrate and the third electrode layer on the back surface connected through the through hole of the substrate is made. By this, before making the connection between the thin-film photoelectric conversion elements,
It has become possible to provide a protective coating on the light receiving surface. A passivation film that prevents the transmission of moisture, a protective coating made of silicone resin or adhesive resin, covers the side surfaces of the thin-film photoelectric conversion element, which not only prevents the penetration of moisture and the like into the power generation area, but also prevents the moisture from penetrating into the substrate itself. And gas intrusion. Furthermore, a film or a coat film used as a protective coating reinforces the strength of the substrate, and when a thin film is used for the substrate, the element becomes stiff, so that it can be easily incorporated into a module or the like after cutting the substrate. . In addition, when bonding a film to one surface of a plurality of elements with an adhesive resin,
If an easily peelable film is adhered to the other surface of the device, the positioning of the device becomes easy, and the modularization process is simplified.

[0009]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings in which parts common to the respective drawings are assigned the same reference numerals. In the embodiment shown in FIG. 1, on a flexible resin substrate (hereinafter simply referred to as a substrate) 1, a back electrode layer 2 of a metal film, at least one p
A photoelectric conversion layer 3 made of an amorphous thin film such as amorphous silicon including an i-n junction, and a transparent electrode layer 4 such as an ITO film are stacked and formed separately, and formed on the opposite surface of the substrate for connection. The transparent electrode 4 and the back electrode 2 are connected by conductors 61 and 62 filling the through holes 51 and 52 penetrating the electrode 7 and the substrate, respectively, and the photoelectric conversion surface is covered with the passivation film 8. S as passivation film
iN _x , SiO _x , SiO _x N _y , SiC _x O _y , amorphous SiN _x : H, amorphous SiO _x : H, amorphous SiO _x
N _y , amorphous SiC _x O _y or amorphous SiC _x : H
Anything can be used as long as it is transparent and prevents transmission of water. For example, by forming amorphous a-SiO _x : H as a passivation film 8 to a thickness of 100 nm, the amount of permeation of moisture can be limited to about 1/100. In addition, the passivation film 8 of this embodiment can cover the exposed surface of the substrate 1 and the end of the photoelectric conversion element, as can be clearly seen from the drawing. Prevent moisture intrusion through. As described above, since the connection electrode 7 is formed on the opposite surface of the substrate 1, it is possible to connect the connection electrode 8 on the rear surface after forming the passivation film 8 and to perform modularization or the like. Therefore, the characteristics do not change before the module is formed. As the substrate 1, any film of an insulating material that can withstand high temperatures such as polyethylene terephthalate (PET), polyethersulfone, polyethylene naphthalate, polyimide, or aramid can be used. Then, the passivation film 8 can be formed on a photoelectric conversion element prepared by a roll-to-roll method or a step-roll method using such a substrate. Can be obtained.

The difference between the embodiment shown in FIG. 2 and the embodiment shown in FIG. 1 is that a passivation film is not formed and heat is applied instead, such as ethylene vinyl acetate (EVA) or a polyolefin resin. This is in that the transparent insulating film 10 is bonded via the resin 9 having adhesiveness. As the transparent insulating film 10, a fluorine-based weather-resistant film may be used, but it is also possible to use a relatively inexpensive film such as PET and coat the surface with a material similar to the passivation film. It is. In this embodiment, the transparent insulating film 10 is adhered to the substrate 1 by an adhesive resin 9 so that
Even if a thin film having a thickness of not more than 00 μm is used, the photoelectric conversion element can be made firm. For this reason, even if the photoelectric conversion element is cut off after the photoelectric conversion element is formed by the roll-to-roll process, the film does not significantly curl, and the next step such as modularization can be configured without any problem.

FIG. 3 shows an apparatus for manufacturing a photoelectric conversion element according to this embodiment. In this device, it is pulled out from the unwinding roll 21 through the rolls 22 and 23 for tension control,
On the substrate on which the laminated structure up to the transparent electrode has been formed, the protective film 10 pulled out from the unwinding roll 24 and the adhesive film 19 are superimposed and thermally bonded between the thermocompression bonding film 25 and the roll 26 to control the tension. Rolls 27, 2
At 8, the tension of the film is adjusted, and this element is cut into a predetermined size on the fixing table 30 using the cutting machine 29. The cut element is moved to the stock position 32 by the moving jig 31. However, there is also a method in which the module is wound on a take-up roll without being cut by a cutting machine, and cut when a module is manufactured. As the adhesive film 19, a film of the resin 9 that can be bonded by heat, such as EVA, is used.

The difference between the embodiment shown in FIG. 4 and the embodiment shown in FIG. 2 is that a silicone resin 11 is applied instead of using the insulating film 10 with the adhesive resin 9 interposed therebetween. For the coating, a method using a roll coater, a method using a printing method, or the like can be used. By using this method, it is possible to protect the photoelectric conversion surface using a relatively inexpensive silicone resin 11, and since the silicone resin 11 blocks, it is possible to sufficiently exert the surface protection function. . Also in this method, it is possible to strengthen the rigidity of the photoelectric conversion element by controlling the thickness of the silicone resin 11. In the next step, it is also possible to coat the surface with a fluororesin or to bond a protective film. When this element is incorporated in a module, it is possible to laminate and protect the entire element again after completing a connection step such as soldering on the back side, as in the embodiment of FIG.

FIG. 5 shows an apparatus for manufacturing such a photoelectric conversion element. The difference from the apparatus shown in FIG. 3 is that a silicone resin supplied from a silicone reservoir 33 is used instead of the protective film 10 on the surface. The point is that the coating is performed on the surface of the substrate 1 on which the photoelectric conversion structure is formed by the roll coater 34.
After the application of the silicone resin 11, the substrate 1 is passed between the opposed heaters 35 and dried by heating. Of course, a far-infrared drying device may be used instead of the heater 35.

In the embodiment shown in FIG. 4, the silicone resin 11 is used for surface protection. However, this can be done by using an adhesive resin such as EVA. This can be achieved by using only the adhesive film 19 without using the protective film 10 in the apparatus shown in FIG. At this time, an effect can be obtained by coating the periphery of the roll with a fluororesin in order to prevent the resin from adhering to the heating roll 25. In this case, 100-1
At a relatively low temperature of 50 ° C., the EVA is once adhered to the element surface, and thereafter, a connection module forming step and the like can be performed. In the final modularization step, the EVA can be melted again by heat and used for bonding.

FIGS. 6 (a) and 6 (b) show another reference example of a method for manufacturing a photoelectric conversion device, in which a laminate up to a transparent electrode 4 is formed on a substrate 1 and vacuum The passivation film 8 is formed by a sputtering method or the like without breaking [FIG. 3A], and thereafter, a patterning line 12 is formed together with the lower layer by a method such as laser processing [FIG.
(b)]. This makes it possible to increase productivity.

Next, an embodiment of manufacturing a module according to the present invention will be described. FIG. 7 shows a photoelectric conversion element used in a module. Through holes 51 and 52 of the substrate 1 are opened before the formation of each layer, and connection conductors in the through holes are formed by the through holes 5 during the film formation.
Separation portions 13 and 14 are provided, which are formed by the back electrode layer 2 or the connection electrode layer 7 penetrating into 1 or 52 and prevent a short circuit therebetween.

FIGS. 8A to 8D show a module assembling process using this element. First, in FIG. 8A, heat is applied to the transparent film 10 by applying heat such as EVA or polyolefin resin. Put resin 9 having adhesive property by
After arranging a plurality of photoelectric conversion elements 40 thereon at an arbitrary position, the surface is covered with a film 15 and heated at a temperature of about 150 ° C. or less, and the transparent film 10 is pressed onto the element 40. After this step, the film 15 is made of a material that can be easily peeled off from the element 40 and the resin 9. In this example, a fluororesin-based film was used. The heating temperature for bonding is preferably 150 ° C. or less from the viewpoint of the heat resistance of the photoelectric conversion element 40 and the like. That is, if the operation is performed at an excessively high temperature, the photoelectric conversion element 4 may be diffused at the pin junction surface of the photoelectric conversion element 20 or at the semiconductor / electrode interface.
This is because the output characteristics of 0 itself deteriorate. Next, the film 15 is peeled off as shown in FIG.
Since the fluororesin film is used for the film 6 as described above, the film 6 can be easily peeled off from the EVA resin or the like. By doing so, the connection electrode layer 7 of the photoelectric conversion element 40 appears on the surface, and the series-parallel connection between the photoelectric conversion elements 40 can be easily performed. After exposing the connection electrode layer 7 of the photoelectric conversion element 40 in this way, connection between the photoelectric conversion elements 40 is performed by a screen printing method using a conductive resin 16 as shown in FIG. 8C. The conductive resin 16 may be any paste that can be cured at a curing temperature of about 150 ° C. or lower and that can be soldered to take out lead wires to the outside. The curing temperature is desirably about 150 ° C. or less for the reasons described above. Needless to say, when the series-parallel connection of the photoelectric conversion elements 20 is changed, a screen pattern is arbitrarily prepared and the screen is changed. After the serial-parallel connection between the photoelectric conversion elements 20 is performed in this manner, as shown in FIG. 8D, a resin 9 having adhesiveness is placed by applying heat such as EVA or a polyolefin-based resin. A on
1) A film 17 having excellent weather resistance such as a composite polymer film containing a foil is laminated, and heated and pressed at about 150 ° C. or less to protect the back side of the module.

According to the present method, it is possible to protect the light receiving surface by arranging a plurality of photoelectric conversion elements at arbitrary positions before connecting the photoelectric conversion elements 40. It was no longer a problem and it was possible to prevent a drop in the non-defective rate. In addition, since the connection between the elements can be made with a resin having conductivity, the series-parallel connection between the elements can be easily made.

In another embodiment shown in FIGS. 9 (a) to 9 (c), the connection electrode layer provided on the back surface of the substrate 1 and the connection conductor passing through the through hole are formed by using a conductive resin by screen printing. It is a point. That is, the photoelectric conversion elements 41 and 42 on which no connection electrode layer is formed on the rear surface of the substrate 1 are arranged below the adhesive resin 9, and the through holes 57 of the substrate 1 are
[FIG. 9 (a)]. Next, a conductive resin 16 is printed on the back surface of the substrate 1 to form a connection electrode layer connected to the back electrode layer 2 and the transparent electrode layer 4 and a connection conductor between the elements 41 and 42 (FIG. 9B). ]. Then, the rear surface of the substrate is protected by the weather-resistant film 17 in the same manner as in FIG. 8D (FIG. 9C). Although the conductive resin 18 is used for the connection conductor passing through the through hole 52 in the embodiment of FIG. 9, a photoelectric conversion element in which the extension of the electrode layer is inserted into the through hole is used as in FIG. Can also. In the method of this embodiment,
There is no need to form the connection electrode layer using a sputtering method or the like, and the process can be greatly simplified.

[0020]

According to the present invention, a thin-film photoelectric conversion element formed on a flexible insulating substrate is connected to an electrode layer through a through hole formed in the substrate, thereby forming an electrode on the rear surface of the substrate. By using an element that is performed in layers, it is possible to protect the light receiving surface before connecting between the photoelectric conversion elements, and defects that occur during transportation before the bonding process, when incorporating into a module, and during bonding Can be greatly reduced.

In addition, it is easy to use a conductive resin that can be screen-printed for connection between elements, and the effect obtained is large, for example, the substrate can be reinforced by protective coating.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view of a thin-film photoelectric conversion device according to one embodiment of the present invention.

FIG. 2 is a sectional view of a thin-film photoelectric conversion device according to another embodiment of the present invention.

FIG. 3 is a side view of a manufacturing apparatus of the thin-film photoelectric conversion device of FIG. 2;

FIG. 4 is a sectional view of a thin-film photoelectric conversion device according to another embodiment of the present invention.

5 is a side view of the apparatus for manufacturing the thin-film photoelectric conversion device of FIG.

FIG. 6 shows a process of manufacturing a thin-film photoelectric conversion device of a reference example.
, (B) in cross-section

FIG. 7 is a sectional view of a thin-film photoelectric conversion element used in another embodiment of the present invention.

FIG. 8 is a sectional view showing a manufacturing process of a thin-film photoelectric conversion device according to another embodiment of the present invention in the order of (a), (b), (c), and (d).

FIG. 9 is a sectional view showing a manufacturing process of a thin-film photoelectric conversion device according to another embodiment of the present invention in the order of (a), (b), and (c).

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Flexible insulating substrate 2 Back electrode layer 3 Amorphous photoelectric conversion layer 4 Transparent electrode layer 51, 52 Through hole 61, 62 Connection conductor 7 Connection electrode 8 Passivation film 9 Adhesive resin 10 Transparent insulating film 11 Silicone resin 16 Conductivity Resin 17 weather-resistant film 18 conductive resin 40, 41, 42 photoelectric conversion element

──────────────────────────────────────────────────続 き Continuation of the front page (56) References JP-A-1-184960 (JP, A) JP-A-4-92478 (JP, A) JP-A-4-2174 (JP, A) JP-A-60-1985 123073 (JP, A) JP-A-53-99887 (JP, A) JP-A-1-83351 (JP, U) (58) Fields investigated (Int. Cl. ⁷ , DB name) H01L 31/04-31 / 078

Claims (15)

(57) [Claims] 1. A first insulating layer is provided on one side of a flexible insulating substrate with a semiconductor layer as a photoelectric conversion layer interposed therebetween, and a transparent second electrode layer is provided on the other side of the flexible insulating substrate. A third electrode layer is provided on the other surface, and the third electrode layer is substantially insulated from the first electrode layer through a connection hole passing through the second electrode layer and the substrate, the first electrode layer, and the semiconductor layer. Are connected by the first electrode layer and a connection hole penetrating at least the substrate, and the first electrode layer and the semiconductor layer are separated from the region of the third electrode layer that is connected to the second electrode layer. A thin-film photoelectric conversion element connected by a substantially insulated conductor to a region of the second electrode layer opposed to the second electrode layer, wherein a protective coating is provided on the side opposite to the substrate of the second electrode layer; Thin film photoelectric conversion device. 2. The thin-film photoelectric conversion device according to claim 1, wherein the protective coating covers the side surface of the thin-film photoelectric conversion element until it reaches the substrate surface. 3. The thin-film photoelectric conversion device according to claim 1, wherein the protective coating is a transparent insulating film that prevents moisture from permeating. 4. A film made of SiN which is transparent insulating and prevents moisture from permeating.
_x , SiO _x , SiO _x N _y , SiC _x O _y , amorphous S
iN _x : H, amorphous SiO _x : H, amorphous SiO _x N
_y, amorphous SiC _x O _y, and the amorphous SiC _x: The thin-film photoelectric conversion device become more claim 3, wherein any one of H. 5. The thin-film photoelectric conversion device according to claim 1, wherein the protective coating is made of a silicone resin. 6. The thin-film photoelectric conversion device according to claim 1, wherein the protective coating is made of an adhesive resin that softens at a high temperature. 7. The thin-film photoelectric conversion device according to claim 1, wherein the protective coating comprises a transparent insulating film and a resin layer filling between the film and the photoelectric conversion element. 8. The thin film photoelectric conversion device according to claim 7, wherein the resin layer filling between the transparent insulating film and the thin film photoelectric conversion element is made of an adhesive resin which softens at a high temperature. 9. The thin-film photoelectric conversion device according to claim 6, wherein the softening temperature of the adhesive resin is 150 ° C. or lower. 10. The thin-film photoelectric conversion device according to claim 1, wherein the third electrode layer of the thin-film photoelectric conversion element and the metal wiring are connected by brazing. 11. The thin-film photoelectric conversion device according to claim 1, wherein the third electrode layer of the thin-film photoelectric conversion element is connected to a wiring made of a conductive wire resin. 12. The thin-film photoelectric conversion device according to claim 11, wherein the curing temperature of the conductive resin is 150 ° C. or less. 13. A first electrode layer is provided on one side of a flexible insulating substrate with a semiconductor layer serving as a photoelectric conversion layer interposed therebetween, and a transparent second electrode layer is provided on the opposite side. A third electrode layer is provided on the other surface, the third electrode layer is a second electrode layer and a substrate,
A region which is connected by a conductor substantially insulated from the first electrode layer through a connection hole penetrating the first electrode layer and the semiconductor layer, and is separated from a region of the third electrode layer connected to the second electrode layer. A thin film that is connected to a first electrode layer and a region of the second electrode layer opposed to the first electrode layer and the semiconductor layer through at least a connection hole penetrating the substrate by a conductor substantially insulated After contacting the film in common with the plurality of third electrode layer side surfaces of the photoelectric conversion element, and filling the adhesive resin between the transparent insulating film and the film covering the second electrode layer side surface, A method for manufacturing a thin-film photoelectric conversion device, comprising: a step of peeling a film on a third electrode layer side; and a step of connecting a wiring to the third electrode layer exposed after the step. 14. A plurality of element regions having a first electrode layer on the substrate side and a second electrode layer on the opposite side with a semiconductor layer serving as a photoelectric conversion layer sandwiched on one surface of a flexible insulating substrate. Forming, a step of opening a first connection hole reaching the second electrode layer through the substrate, the first electrode layer and the semiconductor layer, and a step of opening a second connection hole reaching the first electrode layer through the substrate. Contacting one end of the conductor substantially insulated by the first electrode layer and the insulator through the first connection hole with the second electrode layer, and exposing the other end to the other surface of the substrate; Contacting one end of the conductor substantially insulated from the second electrode layer facing through the hole with the first electrode layer and exposing the other end to the other surface of the substrate; The transparent insulating film covering the surface on the second electrode layer side, which is brought into common contact, and adheres between the film and the transparent insulating film A thin film photoelectric conversion method comprising: a step of peeling off a film on the other side of the substrate after filling the resin; and a step of contacting and connecting a wiring made of a conductive resin to an exposed portion of the conductor passing through the connection hole. A method for manufacturing a conversion device. 15. The method according to claim 13, wherein after forming the wiring, a weather-resistant film is provided on a surface opposite to the transparent insulating film via an adhesive resin layer covering the wiring.