JP3157898B2 - Optical semiconductor device - Google Patents
Optical semiconductor deviceInfo
- Publication number
- JP3157898B2 JP3157898B2 JP10797692A JP10797692A JP3157898B2 JP 3157898 B2 JP3157898 B2 JP 3157898B2 JP 10797692 A JP10797692 A JP 10797692A JP 10797692 A JP10797692 A JP 10797692A JP 3157898 B2 JP3157898 B2 JP 3157898B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- semiconductor laser
- output
- light receiving
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0225—Out-coupling of light
- H01S5/02255—Out-coupling of light using beam deflecting elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
Landscapes
- Semiconductor Lasers (AREA)
- Optical Head (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
- Light Receiving Elements (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は半導体レーザの光出力モ
ニター用受光素子を内蔵した光半導体装置に関するもの
である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical semiconductor device having a light receiving element for monitoring the light output of a semiconductor laser.
【0002】[0002]
【従来の技術】一般に半導体レーザ装置は、図4に示す
ように、レーザ素子1からの後面出力光3をフォトダイ
オード5で検知し、その出力変動(信号変化)をレーザ
定出力駆動用回路(APC回路:Auto Power
Controller)に伝え、レーザ出力が常に一
定となる様にフィードバックを行っている。また半導体
レーザを使用する機器においては、消費電力低減のため
に、発振しきい値電流Ith、駆動電流Iopを低く仰
えることが望まれる。したがって、半導体レーザ素子の
後面をマルチコート(MC)として、Ithを下げ内部
微分効率ηを高くして光出力の利用効率を上げている。2. Description of the Related Art Generally, as shown in FIG. 4, in a semiconductor laser device, a rear surface output light 3 from a laser element 1 is detected by a photodiode 5, and its output fluctuation (signal change) is detected by a laser constant output driving circuit ( APC circuit: Auto Power
Controller), and feedback is performed so that the laser output is always constant. In a device using a semiconductor laser, it is desired to reduce the oscillation threshold current Ith and the drive current Iop in order to reduce power consumption. Therefore, the rear surface of the semiconductor laser device is multi-coated (MC), and Ith is reduced and internal differential efficiency η is increased to increase the efficiency of using light output.
【0003】[0003]
【発明が解決しようとする課題】従来の技術では以下の
問題点がある。The prior art has the following problems.
【0004】i)レーザの光出力を前面光と後面光に分
けるため、レーザ素子としての光出力の利用効率が悪
い。[0004] i) Since the light output of the laser is divided into front light and rear light, utilization efficiency of the light output as a laser element is poor.
【0005】ii) また、前述したように後面マルチコー
トとした場合、モニター電流Imが小さくなり、定出力
駆動用回路(APC回路)の設計がむずかしくなる。Ii) When the rear surface is multi-coated as described above, the monitor current Im becomes small, and the design of the constant output drive circuit (APC circuit) becomes difficult.
【0006】一般に発振しきい値電流Ithは次式で与
えられる。Generally, the oscillation threshold current Ith is given by the following equation.
【0007】[0007]
【数式1】 [Formula 1]
【0008】Lは共振器長、Wは電流通路のストライプ
幅、ηSPは内部量子効率、Jo,βは定数、Гは閉じ込
め係数、αiは内部損失、Rfは前面のレーザ光取出面
の反射率、Rrは後面の反射率である。[0008] L is the length of the resonator, W is the stripe width of the current path, η SP is the internal quantum efficiency, Jo and β are constants, Г is the confinement coefficient, αi is the internal loss, and Rf is the reflection of the front laser light extraction surface. The ratio, Rr, is the reflectivity of the rear surface.
【0009】したがって(1)式より、RfとRrの
積、即ちRfRrを大きくとることが望ましいが、Rf
を上げるとレーザ素子内部の光密度が増加し、また光の
取り出し効率ηが低下し、駆動電流Iopの上昇を招く
ことになる。そこで一般に半導体レーザにおいては、I
thの増加を抑え、効率よく光出力を取り出すためにR
fに比べRrを高く設定している。Therefore, it is desirable that the product of Rf and Rr, that is, RfRr, be large from the equation (1).
Increases the light density inside the laser element, the light extraction efficiency η decreases, and the driving current Iop increases. Therefore, in general, in a semiconductor laser, I
In order to suppress the increase in th and efficiently take out the light output, R
Rr is set higher than f.
【0010】しかし、実際に半導体レーザを光源として
使用する場合においては、その後面出射光をフォトダイ
オード等によりモニターし、光源出力が常に一定になる
様にフィードバックしているが、後面側の反射率が高い
ため、そのモニター用出射光の光出力が減少し、モニタ
ー用にフォトダイオードの出力電流(Im)が減少する
結果、フィードバックが困難になってくるという点があ
る。However, when a semiconductor laser is actually used as a light source, the light emitted from the rear surface is monitored by a photodiode or the like, and feedback is performed so that the output of the light source is always constant. Is high, the light output of the monitor emission light is reduced, and the output current (Im) of the photodiode for monitoring is reduced. As a result, feedback becomes difficult.
【0011】本発明は上述の問題点を解決するためにな
され、レーザ素子の前方にモニター用受光素子を配置
し、その受光素子望ましい表面で殆どの光を反射させる
ようにしたものである。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and a monitoring light receiving element is disposed in front of a laser element so that most light is reflected on a desired surface of the light receiving element.
【0012】[0012]
【課題を解決するための手段】半導体レーザ素子および
該半導体レーザ素子の光出力面前方に配置された半導体
レーザの光出力制御用の受光素子とを備え、前記受光素
子の保護ガラス表面にレーザ光を回析させるための回析
格子を形成したことを特徴とする。A semiconductor laser device and a light receiving device for controlling the light output of a semiconductor laser disposed in front of the light output surface of the semiconductor laser device. Characterized in that a diffraction grating for diffracting is formed.
【0013】[0013]
【作用】受光素子表面において、例えばグレーティング
を設けることで光ピックアップ用の3ビーム光源とする
ことができ、また、レーザ素子の後面側の反射率を大き
くすることが可能なので(マルチコート化)、レーザの
低しきい値、低駆動電流等が実現でき、特性改善が図れ
る。By providing, for example, a grating on the surface of the light receiving element, a three-beam light source for an optical pickup can be obtained, and the reflectance on the rear side of the laser element can be increased (multi-coating). A low threshold value and low drive current of the laser can be realized, and the characteristics can be improved.
【0014】[0014]
【実施例】以下図1〜図3に従って本発明の実施例を説
明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIGS.
【0015】図1は一実施例を示す構成図であり、サブ
マウント4上の半導体レーザ素子1からの前面出力光を
用い、光回析機能を有すフォトダイオード13でレーザ
光出力をモニターするようにしている。また、レーザ素
子1の後面は反射率を大きくするためマルチコートして
いる。そして、フォトダイオード13の表面に、回析格
子14aを印刻したガラス14を組込んでいる。なお、
ステム6上のフォトダイオード13の傾斜角θは任意に
設定可能であるので、フォトダイオード13からの回析
光の方向を自由に設定できる。FIG. 1 is a block diagram showing one embodiment, in which a laser light output is monitored by a photodiode 13 having a light diffraction function using front output light from a semiconductor laser element 1 on a submount 4. Like that. The rear surface of the laser element 1 is multi-coated to increase the reflectance. The glass 14 on which the diffraction grating 14a is engraved is incorporated into the surface of the photodiode 13. In addition,
Since the inclination angle θ of the photodiode 13 on the stem 6 can be set arbitrarily, the direction of the diffracted light from the photodiode 13 can be set freely.
【0016】図2は、図1のサブマウント4とフォトダ
イオード13を一体化したサブマウント9を使用した例
である。この場合も、図中、傾斜角θを自由設定でき
る。FIG. 2 shows an example in which a submount 9 in which the submount 4 and the photodiode 13 of FIG. 1 are integrated is used. Also in this case, the inclination angle θ can be freely set in the figure.
【0017】図1及び図2の10,11は、回析格子に
よる1次回析光である。この回析光10,11を利用し
てディスクの読み書きのトラッキングサーボを行うこと
ができる。12は0次回析光で、ディスクの読み書きも
のメーン光として使用できる。Reference numerals 10 and 11 in FIGS. 1 and 2 denote first-order diffracted light by the diffraction grating. Using these diffracted light beams 10 and 11, it is possible to perform tracking servo for reading and writing on the disk. Reference numeral 12 denotes a zeroth-order light beam, which can be used as a main light beam for reading and writing data on a disk.
【0018】図3は、回析格子付ガラス14を組込んだ
フォトダイオード13をレーザユニット16の外部光学
系回路のミラーとして使用した実施例である。なお、1
5はレンズである。FIG. 3 shows an embodiment in which a photodiode 13 incorporating a diffraction grating glass 14 is used as a mirror of an external optical system circuit of a laser unit 16. In addition, 1
5 is a lens.
【0019】[0019]
【発明の効果】以上のように本発明によれば、半導体レ
ーザのパワーモニター用受光素子を半導体レーザ素子の
前方に設置することが可能となり、半導体レーザ素子の
後面側の反射率を高く設定し、発振しきい値電流を低く
抑えた場合においても、光出力制御用受光素子の出力電
流を十分確保することができる。As described above, according to the present invention, it is possible to install a power monitoring light receiving element of a semiconductor laser in front of the semiconductor laser element, and to set a high reflectance on the rear surface side of the semiconductor laser element. Even when the oscillation threshold current is kept low, the output current of the light output control light receiving element can be sufficiently ensured.
【0020】また、受光素子表面に回析格子を印刻し、
レーザ光を回析させる機能を持たせたことにより、本光
半導体装置を使った光学機器の部品点数の削減が実現で
きる。Further, a diffraction grating is imprinted on the light receiving element surface,
By providing the function of diffracting laser light, it is possible to reduce the number of components of an optical device using the optical semiconductor device.
【図1】本発明の第1実施例を示す構成図である。FIG. 1 is a configuration diagram showing a first embodiment of the present invention.
【図2】第2実施例を示す構成図である。FIG. 2 is a configuration diagram showing a second embodiment.
【図3】第3実施例を示す構成図である。FIG. 3 is a configuration diagram showing a third embodiment.
【図4】従来例を示す構成図である。FIG. 4 is a configuration diagram showing a conventional example.
1 半導体レーザ 13 受光素子 14 回析格子付ガラス DESCRIPTION OF SYMBOLS 1 Semiconductor laser 13 Photodetector 14 Glass with diffraction grating
───────────────────────────────────────────────────── フロントページの続き (72)発明者 林 寛 大阪府大阪市阿倍野区長池町22番22号 シャープ株式会社内 (72)発明者 上田 禎亮 大阪府大阪市阿倍野区長池町22番22号 シャープ株式会社内 (72)発明者 小川 勝 大阪府大阪市阿倍野区長池町22番22号 シャープ株式会社内 (72)発明者 宮嵜 啓介 大阪府大阪市阿倍野区長池町22番22号 シャープ株式会社内 (56)参考文献 特開 平1−270382(JP,A) 特開 平2−252131(JP,A) 特開 昭61−243963(JP,A) 特開 平3−106091(JP,A) 特開 平3−212828(JP,A) 特開 平4−349687(JP,A) 特開 平4−89638(JP,A) (58)調査した分野(Int.Cl.7,DB名) H01S 5/00 - 5/50 G11B 7/125 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Hiroshi Hayashi 22-22, Nagaikecho, Abeno-ku, Osaka, Osaka Inside Sharp Corporation (72) Inventor Yoshiaki Ueda 22-22 Nagaikecho, Abeno-ku, Osaka, Osaka Sharp shares In-company (72) Inventor Masaru Ogawa 22-22 Nagaikecho, Abeno-ku, Osaka-shi, Osaka Inside Sharp Corporation (72) Inventor Keisuke Miyazaki 22-22 Nagaikecho, Abeno-ku, Osaka-shi, Osaka Inside Sharp Corporation (56) Reference Document JP-A-1-270382 (JP, A) JP-A-2-252131 (JP, A) JP-A-61-243963 (JP, A) JP-A-3-106091 (JP, A) JP-A-3-302 212828 (JP, A) JP-A-4-349687 (JP, A) JP-A-4-89638 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) H01S 5 / 00-5 / 50 G11B 7/125
Claims (2)
導体レーザ素子の光出力前方に配置された該半導体レー
ザ素子の光出力制御用の受光素子とを、ステム上に固定
してなり、 前記受光素子の受光面側に、回折格子が一体的に組み込
まれてなる ことを特徴とする光半導体装置。1. A semiconductor laser device comprising : a semiconductor laser device;
The semiconductor laser disposed in front of the optical output of the semiconductor laser device.
The light receiving element for controlling the optical output of the element is fixed on the stem
The diffraction grating is integrated into the light receiving surface of the light receiving element.
An optical semiconductor device characterized by being rare .
クの読み書きのトラッキングサーボ用に、0次回折光を
ディスクの読み書きのメーン光としてなることを特徴と
する請求項1に記載の光半導体装置。2. The method according to claim 1, wherein said first-order diffracted light by said diffraction grating is dis- played.
0th order diffracted light for tracking servo
2. The optical semiconductor device according to claim 1, wherein the optical semiconductor device is used as main light for reading and writing data from / to a disk .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10797692A JP3157898B2 (en) | 1992-04-27 | 1992-04-27 | Optical semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10797692A JP3157898B2 (en) | 1992-04-27 | 1992-04-27 | Optical semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH05304313A JPH05304313A (en) | 1993-11-16 |
JP3157898B2 true JP3157898B2 (en) | 2001-04-16 |
Family
ID=14472835
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10797692A Expired - Fee Related JP3157898B2 (en) | 1992-04-27 | 1992-04-27 | Optical semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3157898B2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003209268A (en) * | 2002-01-11 | 2003-07-25 | Mitsubishi Electric Corp | Optical module |
JP2003303975A (en) * | 2002-04-08 | 2003-10-24 | Opnext Japan Inc | Optical module with photodiode for monitoring |
-
1992
- 1992-04-27 JP JP10797692A patent/JP3157898B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH05304313A (en) | 1993-11-16 |
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