JP3153743B2 - Plasma processing equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus for performing plasma processing on an object to be processed, such as a semiconductor wafer or an LCD substrate, in a processing chamber.

[0002]

2. Description of the Related Art Conventionally, a parallel plate type plasma processing apparatus using a high frequency (RF) has been widely used as an apparatus for performing a plasma processing on an object to be processed, for example, a semiconductor wafer or an LCD substrate in a processing chamber. I have. Such a parallel plate type plasma processing apparatus generates a plasma between both electrodes by applying a high frequency to one or both electrodes, and causes a plasma flow to flow into a processing surface of a processing target, for example, etching. The processing is performed.

[0003] However, in the above-mentioned parallel plate type plasma processing apparatus, it is difficult to carry out ultra-fine processing in sub-micron units and sub-half-micron units required with ultra-high integration of semiconductor devices. In other words, in order to perform such a process using a plasma processing apparatus, it is important to control high-density plasma with high accuracy in a low-pressure atmosphere (for example, 1 to 50 mTorr). It is necessary to have a large area and high uniformity so as to be able to cope with the LCD substrate.

[0004] To meet such technical requirements, many approaches have been taken to establish a new plasma source. For example, European Patent Publication No. 379828 discloses a high frequency induction plasma processing apparatus using a high frequency antenna. As shown in FIG. 8, in the high-frequency induction plasma processing apparatus 10, one surface (ceiling surface) of a processing chamber 16 opposed to a mounting table 14 on which an object 12 is mounted is formed of a dielectric 18 such as quartz glass. And on the outer wall,
For example, a high-frequency antenna 20 composed of a spiral coil is installed (see FIG. 9), and a high-frequency power is applied to this high-frequency antenna 20 from a high-frequency power supply 22 via a matching circuit 24 to form a high-frequency electromagnetic field in the processing chamber 16. The electron flowing in the electromagnetic field space collides with neutral particles of the processing gas to ionize the gas and generate plasma. Note that the mounting table 14 is designed to promote the incidence of the plasma flow on the processing surface of the processing target 12,
High frequency power for bias can be applied from the high frequency power supply 26. An exhaust port 28 communicating with an exhaust unit (not shown) is provided at the bottom of the processing chamber 16 so that the inside of the processing chamber 16 has a predetermined pressure atmosphere. A processing gas inlet 30 for introducing a predetermined processing gas into the processing chamber 16 is provided at a central portion of the processing chamber 16.

[0005]

By the way, in the conventional high frequency induction plasma processing apparatus as described above, FIG.
As shown in (2), since the high-frequency antenna 20 is composed of a spiral coil disposed on the outer wall surface of the dielectric 18 in a plane, the density of the coil is high at the center thereof, A plasma having a higher density is generated, and as shown in FIG. 15, the etching rate is different between the central portion and the peripheral portion of the processing surface of the processing object, and it is difficult to achieve in-plane uniformity of the plasma processing. There was a problem. This problem has been particularly remarkable in a large-sized processing apparatus for processing a large-diameter semiconductor wafer or a large-area LCD substrate.

In the case where a spiral coil 20 is used in processing a substantially rectangular LCD substrate (the outline of which is indicated by a dotted line 32 in FIG. 9), the spiral coil 20 exists. In the region 34, a good plasma can be obtained, but the corner region 3 where the spiral coil 20 does not exist is provided.
As for No. 6, there was a problem that a sufficient electromagnetic field could not be obtained, the plasma density became coarse, and it was difficult to perform a process with excellent in-plane uniformity.

The present invention has been made in view of the above-mentioned problems of the conventional high-frequency induction plasma processing apparatus, and has as its object to achieve higher density and uniform in-plane even under low pressure conditions. An object of the present invention is to provide a new and improved high-frequency induction plasma processing apparatus capable of generating plasma having excellent performance and performing optimal processing according to the shape of an object to be processed.

[0008]

According to a first aspect of the present invention, a dielectric material is formed by applying a high-frequency power to a high-frequency antenna according to a first aspect of the present invention. To excite the induction plasma into the processing chamber through
In a plasma processing apparatus configured to perform processing on an object to be processed in the processing chamber, the high-frequency antenna includes a plurality of high-frequency antenna members, and each of the high-frequency antenna members is disposed above the dielectric. A branch portion that branches off from a common feeding point and reaches the dielectric upper surface or its vicinity, a first turn portion that forms a turn near the dielectric side end of the branch portion, and extends from the first turn portion There is provided a plasma processing apparatus configured to include an extension part and a second turn part that forms a turn from the extension part.

According to such a configuration, the high-frequency antenna comprises:
Since it is composed of a plurality of high-frequency antenna members, it is possible to freely lay out the antenna on the top surface of the dielectric, and obtain a plasma with a uniform density by optimizing the layout according to the shape of the object to be processed. Can be. In addition, since the branch portion of each high-frequency antenna member is configured to reach from the common feeding point at a position distant from the dielectric upper surface to the dielectric upper surface or its vicinity, the inside of the processing chamber corresponding to the branch portion is formed. The plasma density can be reduced as compared with the plasma density in other parts. Therefore, for example, by disposing the branch portion above the central region of the processing chamber where the plasma density tends to be high, the plasma density of the processing chamber can be made uniform. As a result, a uniform plasma process can be performed even when a large-sized object is processed.

[0010]

[0011]

[0012] In addition, in the above-described plasma processing apparatus, data
Over emissions unit was configured to have a turn shape substantially similar to the contour shape of the object to be processed. According to such a configuration,
The antenna turn shape is selected according to the contour of the body.
When processing LCD substrates, roll them in a square shape.
The corners of the LCD board can be
Good plasma processing can be performed for even minutes.

[0013] The high frequency antenna member according to claim 2 is provided.
So that it consists of horn-wound antennas
You may. The turn part of the high-frequency antenna member is
As described in claim 3, the high-frequency antenna is operated once or several times.
It may be configured to be spirally wound. Ma
The turn part of the high-frequency antenna member is according to claim 4.
As shown in the figure below.
It may be made up of

[0014] According to a second aspect of the present invention, a claim is provided.
As described in 5 , a plasma configured to excite an induction plasma into a processing chamber through a dielectric by applying high-frequency power to a high-frequency antenna and to perform processing on an object to be processed in the processing chamber In the processing apparatus, the high-frequency antenna is a plate-shaped conductor placed on the dielectric upper surface, and the conductor is configured to have a contour substantially similar to the contour of the object to be processed. An apparatus is provided.

According to a third aspect of the present invention, as described in claim 6 , by applying high-frequency power to a high-frequency antenna, an induction plasma is excited into a processing chamber through a dielectric, In a plasma processing apparatus configured to perform processing on an object to be processed in a processing chamber, the high-frequency antenna is a girder-shaped conductor placed on the upper surface of the dielectric, and the conductor is a conductor of the object to be processed. A plasma processing apparatus configured to have a contour shape substantially similar to the contour shape is provided.

Further, according to a fourth aspect of the present invention,
According to a seventh aspect of the present invention, a high-frequency power is applied to a high-frequency antenna to excite an induction plasma in a processing chamber via a dielectric material, and a process is performed on an object to be processed in the processing chamber. In the plasma processing apparatus, the high-frequency antenna is a ladder-shaped conductor placed on the dielectric upper surface, and the conductor is configured to have a contour substantially similar to the contour of the object to be processed. A plasma processing apparatus is provided.

As described above, according to the second to fourth aspects of the present invention described in claims 5 to 7 , the antenna has a plate-like shape, a cross-like shape or a shape matching the contour shape of the object to be processed. Since the ladder-shaped conductor is used, a uniform plasma density can be obtained over the entire processing surface of the object.

[0018]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment in which a plasma processing apparatus according to the present invention is applied to an etching apparatus for an LCD substrate will be described below in detail with reference to the accompanying drawings.

The plasma etching apparatus 100 shown in FIG.
Has a processing container 102 formed in a substantially rectangular cylindrical shape (see FIGS. 2 and 3) made of a conductive material, for example, aluminum or the like, and a predetermined etching process is performed in the processing container 102. This is performed in the processing chamber 102a to be formed.

The processing container 102 is grounded, and further has a substantially rectangular cylindrical mounting table 106 for mounting an object to be processed, for example, an LCD substrate L, on the bottom thereof via an insulating plate 104 made of ceramic or the like. Is provided. Mounting table 1
A first dielectric portion 108a made of, for example, quartz glass or ceramic is hermetically provided via a sealing member (not shown) at a central portion of a top plate of the processing container 102 substantially opposed to the mounting surface of the LCD substrate L. The insulating material 108a
An upper high-frequency antenna portion 112a made of a conductor, for example, a copper plate, aluminum, stainless steel, or the like is disposed on the outer wall surface of the antenna. As shown in FIG. 1, a shield part 150 made of a conductor such as aluminum is provided around the first dielectric part 108a at the center of the top plate. Further, the first dielectric part 1 is provided outside the shield part 150.
A second dielectric portion 108b made of quartz glass or ceramic is provided so as to stand substantially perpendicularly to 08a. A side high-frequency antenna portion 112b made of a copper plate or aluminum is arranged so as to surround the outer wall surface of the second dielectric portion 108b. As described above, the high-frequency antenna 112 according to the present embodiment is installed on the upper high-frequency antenna unit 112a installed on the first dielectric unit 108a and on the second dielectric unit 108b in terms of the arrangement position. Side high-frequency antenna section 112b.

Next, the high-frequency antenna 1 according to the present embodiment
12 (112a, 112b) will be described in terms of shape.
As shown in FIG. 2, the high-frequency antenna 112 (112a,
112b) includes the first high-frequency antenna member 114 and the second high-frequency antenna member 114.
, And the antenna members 114 and 116 form turns in the same direction (counterclockwise in the illustrated example) so that they do not overlap each other.

In this specification, the term "turn of a high-frequency antenna" is used not only when the antenna is wound one or more turns, but also when it is wound in a spiral, coil, or loop, and is also turned one turn. If less than, for example, half rotation and 、 ３ rotation are included. Further, the turn of the high-frequency antenna in the present specification does not necessarily need to be constituted by a curved line, and includes a square turn obtained by combining linear portions. In short, it is understood that the turn shape of the high-frequency antenna to which the present invention can be applied can be applied to all antenna shapes other than the linear antenna.

Referring to FIGS. 2 and 3, high-frequency antenna 112 (112a, 112b) according to the present embodiment.
Will be described in more detail. High frequency antenna 112
(112a, 112b) has a common feeding point 115 above a substantially central region of the first dielectric portion 108a. The common power supply point 115 is connected to a high-frequency power supply 1 for plasma generation through a matching circuit 120 through a common conductor 118.
22. Then, the high-frequency antenna 112
(112a, 112b) are branched from the common feeding point 115 to the first and second antenna members 114, 116 described above. The branch portions 114a and 116a of each antenna
From the common feeding point 115 to the first dielectric portion 10 of the processing chamber 102
The first turn portions 114b and 116b are formed from the upper surface 8a or the vicinity thereof and wound therefrom in a counterclockwise direction.

As described above, in this embodiment, each of the high-frequency antennas 112 (114, 116) reaches the upper surface of the first dielectric portion 108a or its vicinity from the common feeding point 115 located at a position distant from the upper surface of the dielectric 108. Branch part 114a, 1
16a, the branch portions 114a, 116
The plasma density in the processing chamber 102 corresponding to a can be made lower than the plasma density in other portions. Therefore, for example, the processing chamber 102 in which the plasma density tends to increase
By arranging the branch portion above the central region, the plasma density in the processing chamber can be made uniform.

Further, as can be easily understood from the plan view of FIG. 2, the first and second high-frequency antenna members 114 and 116 have first turn portions 114b respectively wound counterclockwise from the branch portions 114a and 116b. , 116b,
Extensions 114c, 116c extending radially outward from respective ends of the first turn portions 114b, 116b, and second turn portions 114d wound counterclockwise from respective ends of the extension portions 114c, 116c, respectively. 116d. The ends of the second turn portions 114d and 116d are grounded.

As is clear from the above description, the upper high-frequency antenna portion 112a of the high-frequency antenna 112 according to the present invention is the same as the branch portions 114a and 116a of the first and second high-frequency antenna members 114 and 116. Part, first turn portions 114b, 116b and extension portion 114
c, 116c. On the other hand, the high-frequency antenna side high-frequency antenna unit 11 according to the present invention
2b is the first and second high-frequency antenna members 11
4 and 116, a part of the extension parts 114c and 116c and the second turn parts 114d and 116d. Note that these sections regarding the high-frequency antenna 112 are merely for convenience of explanation and understanding of the invention, and it is needless to say that the technical scope of the present invention described in the claims is not limited by such sections.

Further, the first and second high-frequency antenna members 114 and 116 are provided with an LCD to be processed.
The turn shape is determined according to the contour shape of the substrate (indicated by the dotted line L in FIG. 3). That is, in the present embodiment, each high-frequency antenna member 114, 116
In accordance with the contour shape of the D board, it is configured as a horn-shaped turn shape including a straight portion and a corner portion. Therefore, when a semiconductor wafer having a substantially circular plane is used as the object to be processed, a circular turn-shaped antenna can be used. The side high-frequency antenna portion 112b (mainly the high-frequency antenna member 1) disposed around the second derivative 108b.
The second turn portions 114d, 116d) of the 14, 14
As shown, the LCD substrate L mounted on the mounting table 106
It is preferable that the etching rate be higher than that of the conventional method.
It is possible to perform a sufficient etching process on the periphery of the CD substrate L, particularly on the corners.

In the example shown in FIG. 3, in order to simplify the drawing and facilitate understanding, two high-frequency antennas 112 are used.
First and second high-frequency antenna members 114, 11
6, the first turns 114b and 116b have a substantially angular rotation of about 3/4, and the second turns 114d and 116d have a substantially angular rotation of about a half. However, the present invention is not limited to this embodiment. . For example, the high-frequency antenna 112 can be composed of one high-frequency antenna member, or can be composed of three or more high-frequency antenna members. Further, the shape and the number of turns of the first and second turns can be freely selected as needed. In this embodiment, it is important to use a high-frequency antenna member having a first turn for adjusting the plasma density in the central region and a second turn for adjusting the plasma density in the peripheral region. For the number and turn shape, the shape of the object to be processed,
According to the size, the layout can be freely adjusted so that the plasma density in the processing chamber is made uniform.

The operation of the high-frequency antenna 112 configured as described above will be described later in detail with reference to FIG. 4, and the description of the remaining components of the plasma processing apparatus 100 will be continued.

The mounting table 106 can be constructed by assembling a plurality of members made of aluminum or the like with bolts or the like.
Temperature adjusting means such as a cooling means 120 and a heating means 122 are provided therein, so that the processing surface of the LCD substrate L can be adjusted to a desired temperature.

The cooling means 120 comprises, for example, a cooling jacket or the like.
For example, a refrigerant such as liquid nitrogen can be introduced through a refrigerant introduction pipe 124, and the introduced liquid nitrogen circulates through the cooling means 120, during which cold heat is generated by nucleate boiling. With this configuration, for example, the cold of liquid nitrogen at −196 ° C.
It is possible to transfer heat to the D substrate L and cool the processing surface of the LCD substrate L to a desired temperature. Note that nitrogen gas generated by nucleate boiling of liquid nitrogen is discharged from the refrigerant discharge pipe 126 to the outside of the container.

Further, a heating means 122 is arranged on the mounting table 106. The heating means 122 has a configuration in which a conductive resistance heating element such as tungsten is inserted into an insulating sintered body such as aluminum nitride. The resistance heating element receives desired power from the power source 132 through the filter 130 by the power supply lead 128 and generates heat,
The temperature of the processing surface of the D substrate L is heated to a desired temperature so that the temperature can be controlled.

Further, the clamping means 13 is provided around the mounting table 106 according to the contour of the LCD substrate to be mounted.
4 are disposed, and the mounted LCD substrate can be clamped and held at, for example, four corners thereof.

A power supply rod 136 made of a hollow conductor is connected to the mounting table 106. The power supply rod 136 further has a blocking capacitor 13.
A high-frequency power source 140 is connected via the power supply 8, and a high-frequency power of, for example, 2 MHz is applied to the mounting table 106 at the time of processing, thereby generating a bias potential between the plasma and the plasma flow on the processing surface of the processing object. It is possible to draw effectively. In the embodiment shown in FIG. 1, a configuration in which high frequency power for bias is applied to the mounting table 106 has been described. However, a configuration in which the mounting table 106 is simply grounded may be employed.

Further, a processing gas supply port 142 is provided on a side wall of the processing container 102 so that a predetermined processing gas,
For example, HCl gas or the like can be introduced into the processing chamber 102a from a gas source (not shown) via a mass flow controller (not shown).

An exhaust pipe 144 is connected to the bottom of the processing container 102 so that the atmosphere in the processing container 102 can be exhausted by exhaust means (not shown), for example, a vacuum pump. The atmosphere in the processing chamber 102a can be evacuated to an arbitrary degree of reduced pressure.

An opening 146 for loading and unloading an object to be processed is provided at a side portion of the processing container 102. The gate 148 allows a load lock chamber (not shown) installed adjacent to the processing container 102 to be opened. The unprocessed LCD substrate L is transferred to the processing chamber 10 by a transfer mechanism (not shown) having a transfer arm and the like.
2A, the processed LCD substrate L can be carried out.

Next, the operation of the plasma etching apparatus according to the present embodiment configured as described above will be described.

First, an unprocessed LCD substrate L is transferred to the processing chamber 1 by a transfer arm (not shown) through the gate valve 148.
02a, is placed on the mounting surface of the mounting table 106, and is held by the clamping means 134.

The inside of the processing chamber 102a is evacuated by a vacuum pump (not shown) connected to an exhaust pipe 144, and at the same time, a predetermined processing gas, for example, HCl gas is supplied from a processing gas supply port 142 provided on the side wall. Introduced into
For example, the inside of the processing chamber is set to a low pressure state of about 10 mTorr.

Then, for example, 13.56 Mhz of high frequency energy is supplied from the high frequency power supply 122 via the matching circuit 120 to the high frequency antenna 112 (114, 116).
Is applied. Then, the high-frequency antenna 112 (114,
An electromagnetic field is formed in the processing chamber 102a by the induction action of the inductance component of 116). At this time, according to the present embodiment, the plasma density in the central region of the processing chamber 102a is adjusted by the branch portions 114a and 116a and the first turn portions 114b and 116b, and the processing chamber 102a is controlled by the second turn portions 114d and 116d. Is adjusted, and a plasma having a uniform density is generated over the entire upper processing surface of the processing target in the processing chamber 102a. Therefore, according to the present embodiment, as schematically shown in FIG. 4, compared with the conventional case shown in FIG. 9, the in-plane uniform etching rate (ER) is excellent over the entire processing surface of the object to be processed. Can be achieved.

The plasma generated in the processing chamber 102a as described above moves in the direction of the LCD substrate L on the mounting table 106 due to the bias potential applied to the mounting table 106, and a desired position with respect to the processing surface. An etching process can be performed. After the predetermined etching process is completed, the processed LCD substrate L is carried out to the load lock chamber via the gate valve 148.

FIG. 5 shows still another embodiment of the plasma processing apparatus according to the present invention. In the second embodiment, the high-frequency antenna 170 is formed of a conductive plate-like member that covers the entire upper surface of the dielectric 108, and feed points 170a and 170b are provided on opposite sides thereof. In the illustrated example, the high-frequency antenna 170 has a substantially rectangular plane, and is suitable for processing an LCD substrate having a substantially rectangular plane. However, when processing a semiconductor wafer having a substantially circular flat surface, a disk-shaped high-frequency antenna can be used. In addition, the plate-like high-frequency antenna 170
Is preferably configured to be larger than the outer dimension of the LCD substrate as the object to be processed. With such a configuration, high-density plasma can be generated not only in the central region of the processing chamber but also in the peripheral region of the processing chamber.

FIG. 6 shows still another embodiment of the plasma processing apparatus according to the present invention. In the third embodiment, the high-frequency antenna 180 is composed of a conductive ladder-like member disposed on the upper surface of the dielectric 108, and feed points 180a and 180b are provided on opposite sides thereof. In addition, it is preferable that the outer peripheral dimension of the high-frequency antenna 180 of the present embodiment is configured to be larger than the outer peripheral dimension of the LCD substrate which is a processing target. With such a configuration, it is possible to generate plasma with a uniform density not only in the central region of the processing chamber but also in the entire region of the processing chamber.

FIG. 7 shows still another embodiment of the plasma processing apparatus according to the present invention. In the fourth embodiment, the high-frequency antenna 190 is composed of a conductive grid-shaped member disposed on the upper surface of the dielectric 108, and feed points 190a and 190b are provided on opposite sides thereof. In addition, it is preferable that the outer peripheral dimension of the high-frequency antenna 190 of this embodiment is configured to be larger than the outer peripheral dimension of the LCD substrate which is the object to be processed. With such a configuration, it is possible to generate plasma with a uniform density not only in the central region of the processing chamber but also in the entire region of the processing chamber.

As described above, the plasma processing apparatus according to the present invention
Although the present invention has been described with reference to an embodiment applied to an etching apparatus for a CD substrate, the present invention is not limited to such an embodiment, and a person skilled in the art may be within the scope of the technical idea described in the claims. If so, various modifications and changes can be made, and it is understood that these also naturally belong to the technical scope of the present invention.

For example, in the above embodiment, an example in which an LCD substrate is processed as an object to be processed has been described.
The present invention can also be applied to a processing apparatus using a semiconductor wafer as a processing target. In the above embodiment, an example in which the present invention is applied to an etching apparatus has been described. However, the present invention can also be applied to various apparatuses using plasma, for example, an ashing apparatus and a plasma CVD apparatus.

[0048]

As described above, according to the plasma processing apparatus constructed based on the present invention, the following excellent operational effects can be obtained.

According to the first aspect, since the high-frequency antenna is composed of a plurality of high-frequency antenna members, the layout of the antenna on the upper surface of the dielectric can be freely performed, and the layout can be adjusted according to the shape of the object to be processed. By optimizing the plasma, a plasma having a uniform density can be obtained. In addition, since the branch portion of each high-frequency antenna member is configured to reach from the common feeding point at a position distant from the dielectric upper surface to the dielectric upper surface or its vicinity, the inside of the processing chamber corresponding to the branch portion is formed. The plasma density can be reduced as compared with the plasma density in other parts. As a result, a uniform plasma process can be performed even when a large-sized object is processed.

[0050]

Further , according to the first to fourth aspects, the turn shape of the antenna is selected according to the contour shape of the object to be processed. Therefore, when the LCD substrate is processed, the antenna wound in a square shape is used. By using this, it is possible to perform favorable plasma processing on the corners of the LCD substrate.

According to the fifth to seventh aspects, since the antenna is formed of a plate-shaped, double-girder-shaped or ladder-shaped conductor adapted to the contour of the object to be processed, the antenna is uniform over the entire processing surface of the object to be processed. Plasma density can be obtained.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view of an embodiment in which a plasma processing apparatus according to the present invention is applied to an etching apparatus for an LCD substrate.

FIG. 2 is a sketch of the plasma processing apparatus shown in FIG.

FIG. 3 is a schematic plan view of the plasma processing apparatus shown in FIG.

FIG. 4 is a schematic sectional view showing the operation of the plasma processing apparatus shown in FIG.

FIG. 5 is a sketch drawing schematically showing a second embodiment of the plasma processing apparatus according to the present invention.

FIG. 6 is a partial perspective view schematically showing a third embodiment of the plasma processing apparatus according to the present invention.

FIG. 7 is a partial perspective view schematically showing a fourth embodiment of the plasma processing apparatus according to the present invention.

FIG. 8 is a sectional view showing a schematic configuration of a conventional high frequency induction plasma processing apparatus.

9 is a schematic plan view of the plasma processing apparatus shown in FIG.

FIG. 10 is a schematic view showing the operation of the plasma processing apparatus shown in FIG.

[Explanation of symbols]

 REFERENCE SIGNS LIST 100 plasma etching apparatus 102 processing vessel 102a processing chamber 106 mounting table 112 high-frequency antenna 114 first high-frequency antenna member 114a power supply point 114b first turn portion 114c extension 114d second turn portion 116 second high-frequency antenna member 116a power supply point 116b First turn section 116c Extension section 116d Second turn section 120 Matching circuit 122 High frequency power supply

Continuation of the front page (58) Field surveyed (Int. Cl. ⁷ , DB name) H05H 1/46 C23F 4/00 H01L 21/3065 C23C 16/50

Claims (7)

(57) [Claims] 1. A plasma processing apparatus configured to excite an induction plasma in a processing chamber via a dielectric by applying a high-frequency power to a high-frequency antenna to perform processing on an LCD substrate in the processing chamber. The high-frequency antenna is composed of a plurality of high-frequency antenna members, each of which high-frequency antenna member branches off from a common feed point disposed above the dielectric, and a branch portion reaching the dielectric upper surface or its vicinity, Outline shape of the LCD substrate
And a turn portion having a turn shape substantially similar to the above . 2. The high-frequency antenna member is wound in a square shape.
2. The antenna according to claim 1, wherein the antenna is provided with an antenna.
3. The plasma processing apparatus according to 1. 3. The turn part of the high-frequency antenna member,
The high-frequency antenna is spiraled for one or more rotations.
3. Wound according to claim 1 or 2, characterized by being wound.
On-board plasma processing equipment. 4. The turn portion of the high-frequency antenna member,
Consists of a horn-shaped turn that combines a curve and a straight line
4. The method according to claim 1, wherein
The plasma processing apparatus as described in the above. 5. A plasma processing apparatus configured to apply high-frequency power to a high-frequency antenna to excite induction plasma in a processing chamber via a dielectric and to perform processing on an object to be processed in the processing chamber. 5. The plasma processing apparatus according to claim 1, wherein the high-frequency antenna is a plate-shaped conductor placed on the upper surface of the dielectric, and the conductor has a contour substantially similar to the contour of the object to be processed. . 6. A plasma processing apparatus configured to apply high-frequency power to a high-frequency antenna to excite induction plasma in a processing chamber via a dielectric and to perform processing on an object to be processed in the processing chamber. In the plasma processing apparatus, the high-frequency antenna is a grid-shaped conductor mounted on the dielectric upper surface, and the conductor has a contour substantially similar to the contour of the object to be processed. . 7. A plasma processing apparatus configured to apply high-frequency power to a high-frequency antenna to excite induction plasma in a processing chamber via a dielectric and to perform processing on an object to be processed in the processing chamber. In the plasma processing apparatus, the high-frequency antenna is a ladder-shaped conductor mounted on the dielectric upper surface, and the conductor has a contour substantially similar to the contour of the object to be processed. .