JP3141527B2 - Method for manufacturing transparent conductive film - Google Patents

Method for manufacturing transparent conductive film

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Publication number
JP3141527B2
JP3141527B2 JP04144413A JP14441392A JP3141527B2 JP 3141527 B2 JP3141527 B2 JP 3141527B2 JP 04144413 A JP04144413 A JP 04144413A JP 14441392 A JP14441392 A JP 14441392A JP 3141527 B2 JP3141527 B2 JP 3141527B2
Authority
JP
Japan
Prior art keywords
glass
conductive film
transparent conductive
temperature
glass frit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP04144413A
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Japanese (ja)
Other versions
JPH05342927A (en
Inventor
雅也 行延
宗一 川田
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Sumitomo Metal Mining Co Ltd
Original Assignee
Sumitomo Metal Mining Co Ltd
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Priority to JP04144413A priority Critical patent/JP3141527B2/en
Publication of JPH05342927A publication Critical patent/JPH05342927A/en
Application granted granted Critical
Publication of JP3141527B2 publication Critical patent/JP3141527B2/en
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Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、液晶表示パネルやプラ
ズマディスプレイパネル等の透明電極や透明ヒーターに
用いるのに最適な透明導電膜の作製方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a transparent conductive film most suitable for use in a transparent electrode or a transparent heater of a liquid crystal display panel or a plasma display panel.

【0002】[0002]

【従来の技術】一般に透明導電膜は、インジウム−錫酸
化物(ITO)や錫−アンチモン酸化物(ATO)等の
酸化物を、スパッター法やCVD法等によりガラス基板
上に成膜させることにより得られるし、又可視光の波長
よりも粒径の小さい導電性の超微粉末を含有した透明導
電性インクをガラス等の基板上に塗布し乾燥させた後4
00℃以上の高温で焼成することにより得られる。
2. Description of the Related Art In general, a transparent conductive film is formed by depositing an oxide such as indium-tin oxide (ITO) or tin-antimony oxide (ATO) on a glass substrate by sputtering or CVD. After obtaining a transparent conductive ink containing a conductive ultra-fine powder having a particle size smaller than the wavelength of visible light on a substrate such as glass and drying,
It is obtained by firing at a high temperature of 00 ° C. or higher.

【0003】[0003]

【発明が解決しようとする課題】ところで、上記前者の
方法による場合は、高価な装置を必要とし、生産性や製
品の分止りが低いために、安価に透明導電膜を得ること
は困難であった。又、上記後者の方法による場合は、導
電性超微粒子間に空隙が残るため、光が散乱し光学特性
が劣る。そこで従来この空隙を埋めるため、予めインク
にガラス形成成分を入れて透明導電膜を作製する方法が
提案されているが、このガラス形成成分は、導電性超微
粒子間に介在して導電膜の表面抵抗を増加させる原因に
なるという問題があり、このため上記後者の方法では、
透明導電膜の光学特性と抵抗値に対する所望条件を同時
に満足させることは困難であった。又、上記後者の方法
で作製した透明導電膜は、空気中に数ヶ月放置しておく
と、少しずつ大気中の水分を吸収して酸化物が水酸化物
に変わるため膜の抵抗が上昇して行くという耐候性の面
での問題点もあった。
However, in the case of the former method, an expensive apparatus is required, and it is difficult to obtain a transparent conductive film at low cost because of low productivity and low product separation. Was. In addition, in the case of the latter method, since voids remain between the conductive ultrafine particles, light is scattered and optical characteristics are deteriorated. Therefore, in order to fill the voids, a method of preparing a transparent conductive film by previously adding a glass forming component to the ink has been proposed. However, the glass forming component is interposed between the conductive ultrafine particles and the surface of the conductive film. There is a problem that causes the resistance to increase, so in the latter method,
It has been difficult to simultaneously satisfy the desired conditions for the optical characteristics and the resistance value of the transparent conductive film. Further, when the transparent conductive film produced by the latter method is left in air for several months, the resistance of the film increases because the oxide in the air is gradually converted into hydroxide by absorbing moisture in the air little by little. There was also a problem in terms of weather resistance.

【0004】本発明は、従来の技術の有するこのような
問題点に鑑みてなされたものであり、その目的とすると
ころは、表面抵抗が小さく、光学特性に優れ且つ耐候性
に優れた透明導電膜の作製方法を提供しようとするもの
である。
The present invention has been made in view of such problems of the prior art, and an object of the present invention is to provide a transparent conductive material having low surface resistance, excellent optical characteristics and excellent weather resistance. It is intended to provide a method for producing a film.

【0005】[0005]

【課題を解決するための手段】上記目的を達成するため
に、本発明による透明導電膜は、ガラス基板上に透明導
電インクを塗布して乾燥し焼成することにより形成され
た後、その上にガラスフリットを含むペーストを塗布し
て乾燥させ、これをガラスフリットの軟化点以上の温度
で焼成することによって得られる。
In order to achieve the above object, a transparent conductive film according to the present invention is formed by applying a transparent conductive ink on a glass substrate, drying and firing, and then forming a transparent conductive ink thereon. It is obtained by applying and drying a paste containing glass frit, and baking the paste at a temperature equal to or higher than the softening point of the glass frit.

【0006】ガラス基板としては、ソーダライムガラス
(転移点660℃),低アルカリガラス(転移点670
℃),無アルカリガラス(転移点730℃)等が用いら
れる。また透明導電インクとしては、ITO,ATO又
は酸化亜鉛−酸化アルミニウム等の可視光の波長よりも
粒径の小さい酸化物超微粉末を溶剤に分散させるか或い
はこれに更に樹脂を溶解して分散させたものが用いられ
る。ガラスフリットとしては酸化物系ガラスが用いら
れ、ガラスフリットの軟化点以上の温度で焼成する際そ
の温度は真空下で昇温することにより得るようにする。
As glass substrates, soda lime glass (transition point 660 ° C.), low alkali glass (transition point 670)
° C), non-alkali glass (transition point 730 ° C) and the like. As the transparent conductive ink, an ultrafine oxide powder having a particle size smaller than the wavelength of visible light, such as ITO, ATO or zinc oxide-aluminum oxide, is dispersed in a solvent or a resin is further dissolved and dispersed in the solvent. Is used. Oxide-based glass is used as the glass frit. When firing at a temperature higher than the softening point of the glass frit, the temperature is obtained by raising the temperature under vacuum.

【0007】[0007]

【作用】透明導電インクをガラス基板上に塗布し、乾燥
後、大気中で約400℃以上に加熱して、樹脂又は溶剤
を完全に除去する。又、この時同時に導電性超微粒子同
志の接触部で焼結が進むため、形成される導電膜の強度
は上昇し、ガラス基板への密着度も良くなる。
The transparent conductive ink is applied on a glass substrate, dried, and heated to about 400 ° C. or higher in the atmosphere to completely remove the resin or the solvent. Also, at this time, sintering proceeds at the contact portion between the conductive ultrafine particles at the same time, so that the strength of the formed conductive film is increased and the degree of adhesion to the glass substrate is also improved.

【0008】次に、導電膜上にガラスフリットを含むペ
ーストを塗布し、乾燥する。ペーストは、ガラスフリッ
トを樹脂を含む溶剤に分散させたもので、スクリーン印
刷法,ドクターブレード等を用いて塗布する。ペースト
を塗布し乾燥した後、先づ大気中で300℃以上好まし
くは約400℃まで加熱して、樹脂分を酸化燃焼させて
完全に除去した後、ガラスフリットの軟化点以上の温度
に昇温して、透明導電膜上にオーバーコートガラス層を
形成せしめる。ガラスフリットに用いられるガラスとし
ては、低融点で耐候性のある酸化鉛−酸化ホウ素−酸化
ケイ素系のガラスがより好ましい。又、ガラスフリット
はガラス基板の転移点より低い軟化点を有することが好
ましい。
Next, a paste containing glass frit is applied on the conductive film and dried. The paste is obtained by dispersing a glass frit in a solvent containing a resin, and is applied using a screen printing method, a doctor blade or the like. After applying and drying the paste, it is first heated to 300 ° C. or more, preferably to about 400 ° C. in the atmosphere, and the resin is oxidized and burned to completely remove the resin. Then, an overcoat glass layer is formed on the transparent conductive film. As a glass used for the glass frit, a lead oxide-boron oxide-silicon oxide glass having a low melting point and weather resistance is more preferable. Further, the glass frit preferably has a softening point lower than the transition point of the glass substrate.

【0009】ガラスフリットを軟化点以上の温度に昇温
するのは、軟化点以上に昇温すると、ガラスフリット同
志が互いに融着すると同時に導電膜の空隙中にガラス成
分が浸透して行き、オーバーコートガラスが徴密化さ
れ、平滑化されるからである。昇温に際しては、基板と
して用いるガラスに歪みが発生しないようにするため、
ガラス基板の転移点以下の温度に昇温する必要がある。
The reason why the temperature of the glass frit is raised to a temperature higher than the softening point is that when the temperature is raised to a temperature higher than the softening point, the glass frit fuses with each other and simultaneously the glass component permeates into the voids of the conductive film, and This is because the coated glass is densified and smoothed. When raising the temperature, in order to prevent distortion from occurring in the glass used as the substrate,
It is necessary to raise the temperature below the transition point of the glass substrate.

【0010】又、オーバーコートガラスの熱膨張係数
は、ガラス基板の熱膨張係数と同程度か或いは若干小さ
いことが好ましい。それは、オーバーコートガラスの熱
膨張係数が小さい場合、オーバーコートガラスに圧縮応
力が残留してオーバーコートガラスの強度が強くなり、
一方オーバーコートガラスの熱膨張係数が大きい場合に
は、オーバーコートガラスに引張り応力が残留してオー
バーコートガラスが割れ易くなるからである。
The thermal expansion coefficient of the overcoat glass is preferably equal to or slightly smaller than the thermal expansion coefficient of the glass substrate. If the thermal expansion coefficient of the overcoat glass is small, compressive stress remains in the overcoat glass and the strength of the overcoat glass increases.
On the other hand, when the thermal expansion coefficient of the overcoat glass is large, tensile stress remains in the overcoat glass and the overcoat glass is easily broken.

【0011】又、ガラスフリットの軟化点以上の温度に
保持すると、ガラスフリットの融着により生じた微細な
気泡が抜けてオーバーコートガラスは導電性超微粒子間
の空隙を埋めるため空隙は透明となり、その結果透明導
電膜の光学特性が著しく向上する。しかしながら余り長
時間加熱し続けると、オーバーコートガラスと導電性超
微粒子との反応或いはオーバーコートガラスと基板ガラ
スとの反応により、透明導電膜の付着している基板面が
軟化して透明導電膜が基板から剥離するようになるた
め、透明導電膜の表面抵抗が増加し、好ましくない。即
ち、550℃程度でオーバーコートガラスを形成せしめ
る場合、40分以上加熱を続けると、表面抵抗は急激に
増加する。従って、オーバーコートガラスの焼成時間は
短い方が良い。
When the temperature is maintained at a temperature equal to or higher than the softening point of the glass frit, fine bubbles generated by the fusion of the glass frit escape, and the overcoat glass fills the gap between the conductive ultrafine particles, so that the gap becomes transparent. As a result, the optical characteristics of the transparent conductive film are significantly improved. However, if the heating is continued for an excessively long time, the reaction between the overcoat glass and the conductive ultrafine particles or the reaction between the overcoat glass and the substrate glass softens the substrate surface to which the transparent conductive film is attached, and the transparent conductive film is formed. Since it comes off from the substrate, the surface resistance of the transparent conductive film increases, which is not preferable. That is, when the overcoat glass is formed at about 550 ° C., if the heating is continued for 40 minutes or more, the surface resistance sharply increases. Therefore, the shorter the baking time of the overcoat glass, the better.

【0012】真空中でガラスフリットの軟化点以上に昇
温するようにすれば、オーバーコートガラス中の気泡を
短時間で抜くことができるので好ましい。又、オーバー
コートガラス内に残留する気泡は、真空から不活性ガス
への切替えで総て消滅するので、この方法を用いれば脱
泡のための時間が不必要となり、短時間でオーバーコー
トガラスの焼成が可能となる。更に、ガラスフリットを
軟化点以上の温度に加熱し、ガラスフリット同志を融着
せしめた後不活性ガス雰囲気下で焼成することにより、
表面抵抗の低い透明導電膜が得られる。
It is preferable to raise the temperature above the softening point of the glass frit in a vacuum, since air bubbles in the overcoat glass can be removed in a short time. In addition, since all the bubbles remaining in the overcoat glass disappear by switching from vacuum to an inert gas, no time is required for defoaming by using this method, and the overcoat glass is removed in a short time. Baking becomes possible. Further, by heating the glass frit to a temperature equal to or higher than the softening point, and fusing the glass frit together, and then firing under an inert gas atmosphere,
A transparent conductive film having a low surface resistance can be obtained.

【0013】又、透明導電膜がオーバーコートガラスで
被覆されることにより、導電膜への大気中の水分の浸透
が妨げられるので、大気中に長時間放置されても表面抵
抗は変化せず、耐候性が著しく向上する。
Also, since the transparent conductive film is covered with the overcoat glass, the penetration of moisture in the air into the conductive film is prevented, so that the surface resistance does not change even if left in the air for a long time. The weather resistance is significantly improved.

【0014】[0014]

【実施例】実施例1 ITO超微粉を溶剤に分散させたITO透明導電インク
(東北加工(株)製DX−101)を、線径0.1mmの
ワイヤーバーで、75mm×75mmの大きさのソーダライ
ムガラス基板(厚さ1mm)上に塗布し、80℃で乾燥し
た。次にこの上に、図1に示すように、銀ペーストSP
(藤倉化成(株)製ドータイトD−1230(改))を
200メッシュの版でスクリーン印刷し、常温で10分
間レベリングした後120℃で20分間乾燥した。これ
を、大気中550℃で20分間焼成した後冷却して透明
導電膜を作成し、その表面抵抗及び光学特性を測定し
た。その結果は表1に示す通りである。この導電膜上に
ガラスペーストGP(日本電気硝子(株)製PLS−3
130,軟化点485℃)を200メッシュの版で図1
に示すようにスクリーン印刷し、常温で10分間レベリ
ングした後、120℃で10分間乾燥した。これを、大
気中580℃に加熱し20分間保持した後窒素雰囲気に
切替え、20分間焼成した。冷却後銀電極部SPとガラ
スオーバーコート部GPを含む部分をガラス基板Pから
切り出し、抵抗及び光学特性(全光線透過率,ヘーズ
値)を測定した。その結果は別表に示す通りである。
Example 1 An ITO transparent conductive ink (DX-101, manufactured by Tohoku Kako Co., Ltd.) in which ultrafine ITO powder was dispersed in a solvent was applied to a wire bar having a wire diameter of 0.1 mm and a size of 75 mm × 75 mm. The composition was applied on a soda lime glass substrate (thickness: 1 mm) and dried at 80 ° C. Next, on this, as shown in FIG.
(Dotite D-1230 (revised) manufactured by Fujikura Kasei Co., Ltd.) was screen-printed on a 200-mesh plate, leveled at room temperature for 10 minutes, and then dried at 120 ° C. for 20 minutes. This was baked at 550 ° C. for 20 minutes in the air and then cooled to form a transparent conductive film, and its surface resistance and optical characteristics were measured. The results are as shown in Table 1. On this conductive film, a glass paste GP (PLS-3 manufactured by NEC Corporation)
130, softening point 485 ° C) with a 200 mesh plate
As shown in the figure, screen printing, leveling at room temperature for 10 minutes, and drying at 120 ° C. for 10 minutes. This was heated to 580 ° C. in the atmosphere and held for 20 minutes, then switched to a nitrogen atmosphere, and fired for 20 minutes. After cooling, a portion including the silver electrode portion SP and the glass overcoat portion GP was cut out from the glass substrate P, and the resistance and the optical characteristics (total light transmittance, haze value) were measured. The results are as shown in the attached table.

【0015】実施例2 ガラスペーストとして、ガラスフリット(日本電気硝子
(株)製GA−9,軟化点430℃)をエチルセルロー
スに溶解したターピネオールに分散させたものを用い、
焼成を大気中550℃で20分間、窒素ガス雰囲気中で
更に20分間行った以外は実施例1と同様の方法でIT
O膜を得た。その測定値は別表に示す通りである。
Example 2 As a glass paste, a glass frit (GA-9 manufactured by NEC Corporation, softening point: 430 ° C.) dispersed in terpineol dissolved in ethyl cellulose was used.
The calcination was performed in the same manner as in Example 1 except that calcination was performed at 550 ° C. in the air for 20 minutes and in a nitrogen gas atmosphere for another 20 minutes.
An O film was obtained. The measured values are as shown in the attached table.

【0016】実施例3 ITO透明導電インクを、線径0.15mmのワイヤーバ
ーでソーダライムガラス板P(図1)上に塗布した点以
外は実施例1と同様の方法でITO膜を得た。その測定
値は別表に示す通りである。
Example 3 An ITO film was obtained in the same manner as in Example 1 except that the ITO transparent conductive ink was applied on a soda lime glass plate P (FIG. 1) with a wire bar having a wire diameter of 0.15 mm. . The measured values are as shown in the attached table.

【0017】ITO超微粉を樹脂を溶解した溶剤に分散
させたインク(東北加工(株)製X−101)を、27
0メッシュの版でスクリーン印刷した点以外は、実施例
1と同様の方法でITO膜を得た。その測定値は別表に
示す通りである。
An ink (X-101, manufactured by Tohoku Kako Co., Ltd.) in which ultrafine ITO powder was dispersed in a solvent in which a resin was dissolved was applied to 27 inks.
An ITO film was obtained in the same manner as in Example 1 except that screen printing was performed using a 0-mesh plate. The measured values are as shown in the attached table.

【0018】実施例5 ガラスペーストGP(図1)を実施例1と同様にスクリ
ーン印刷し乾燥した後、大気中400℃に加熱して20
分間保持し、その後真空中で580℃に昇温し、昇温後
窒素ガス雰囲気に切替えて20分間焼成した以外は、実
施例1と同様の方法でITO膜を得た。得られたITO
膜に図2に示すように電圧Vを印加して、熱電対TCに
より表面温度を測定し、透明ヒーターとしての性能をテ
ストした。即ち、電圧はオーバーコートITO膜GPの
両側端の銀電極SP間に交流電圧V(60Hz:20ボル
ト,15ボルト,10ボルト)を印加し、表面温度は箔
状の熱電対TCにより測定した。図3はその測定結果を
示しているが、この図から明らかなように、ITO膜へ
の印加電圧を調整してITO膜の表面温度を高くした場
合においても、断線したりスパークが発生したりするこ
となく、表面抵抗が安定していることが分かる。図4
は、本実施例のようなガラスオーバーコートITO膜と
オーバーコート無しITO膜を大気中(20〜25℃,
相対湿度RH50〜70%)に放置した場合の抵抗値の
変化を示しているが、この図から明らかなように、本発
明による透明導電膜は大気中に6ケ月以上放置しても表
面抵抗は変化しない。
Example 5 A glass paste GP (FIG. 1) was screen-printed and dried in the same manner as in Example 1, and then heated to 400.degree.
Then, the temperature was raised to 580 ° C. in vacuum, and after the temperature was raised, the atmosphere was switched to a nitrogen gas atmosphere and baked for 20 minutes, to thereby obtain an ITO film in the same manner as in Example 1. The obtained ITO
A voltage V was applied to the film as shown in FIG. 2 and the surface temperature was measured with a thermocouple TC to test the performance as a transparent heater. That is, an AC voltage V (60 Hz: 20 volts, 15 volts, 10 volts) was applied between the silver electrodes SP on both side ends of the overcoat ITO film GP, and the surface temperature was measured by a foil thermocouple TC. FIG. 3 shows the measurement results. As is clear from FIG. 3, even when the surface temperature of the ITO film is increased by adjusting the voltage applied to the ITO film, disconnection or sparking may occur. It can be seen that the surface resistance is stable without performing. FIG.
Is a method of forming a glass overcoat ITO film and an overcoat-free ITO film as in this embodiment in the air (20 to 25 ° C.,
(Relative humidity RH 50 to 70%) shows the change in the resistance value when the transparent conductive film according to the present invention is left in the air for 6 months or more. It does not change.

【0019】比較例 オーバーコートガラスの焼成を大気中580℃で40分
間,窒素ガス雰囲気中580℃で20分間行った以外は
実施例1と同様の方法でITO膜を得た。その測定値は
別表に示す通りである。
Comparative Example An ITO film was obtained in the same manner as in Example 1 except that the overcoat glass was baked in the air at 580 ° C. for 40 minutes and in a nitrogen gas atmosphere at 580 ° C. for 20 minutes. The measured values are as shown in the attached table.

【0020】尚、全光線透過率及びヘーズ値はスガ試験
機械(株)製の直読ヘーズコンピューターHGM−ZD
Pを用いて基板と共に測定され、又表面抵抗は三菱油化
(株)製のローレスタMCP−T400を用いて測定さ
れた。
The total light transmittance and the haze value were measured by a direct reading haze computer HGM-ZD manufactured by Suga Test Machine Co., Ltd.
P was measured together with the substrate, and the surface resistance was measured using a Loresta MCP-T400 manufactured by Mitsubishi Yuka Corporation.

【0021】別 表 [Appendix]

【0022】[0022]

【発明の効果】上述の如く本発明方法によれば、低抵抗
で透明度と耐候性に優れた良質の透明導電膜を提供する
ことができる。
As described above, according to the method of the present invention, a high-quality transparent conductive film having low resistance, excellent transparency and excellent weather resistance can be provided.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明方法による透明導電膜の作製過程を示す
平面図である。
FIG. 1 is a plan view showing a process for producing a transparent conductive film according to the method of the present invention.

【図2】本発明方法により作製された透明導電膜の印加
電圧と表面温度との関係を測定する方法を説明するため
の平面図である。
FIG. 2 is a plan view for explaining a method for measuring a relationship between an applied voltage and a surface temperature of a transparent conductive film manufactured by the method of the present invention.

【図3】本発明方法により作製された透明導電膜の印加
電圧と表面温度との関係を示す特性線図である。
FIG. 3 is a characteristic diagram showing a relationship between an applied voltage and a surface temperature of a transparent conductive film manufactured by the method of the present invention.

【図4】ITO膜の表面抵抗の経時変化を示す線図であ
る。
FIG. 4 is a diagram showing a change with time of the surface resistance of the ITO film.

【符号の説明】[Explanation of symbols]

P ITO透明導電インクの塗布されたガラス基板 GP ガラスペースト(ガラスオーバーコート部) SP 銀ペースト(銀電極部) TC 熱電対 P ITO Glass substrate coated with transparent conductive ink GP Glass paste (glass overcoat part) SP Silver paste (silver electrode part) TC Thermocouple

───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7,DB名) H01B 13/00 H01B 5/00 - 5/16 C23D 5/00 ──────────────────────────────────────────────────続 き Continuation of front page (58) Field surveyed (Int.Cl. 7 , DB name) H01B 13/00 H01B 5/00-5/16 C23D 5/00

Claims (3)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 ガラス基板上に酸化物超微粉末を溶剤中
に分散させた透明導電インクを塗布して乾燥し焼成する
ことにより酸化物超微粉末から成る導電膜を形成せしめ
た後、該導電膜上にガラスフリットを含むペーストを塗
布して乾燥し、これをガラスフリットの軟化点以上の温
度で焼成することにより、酸化物超微粉末間の空隙をガ
ラスフリットのガラス成分が埋めた導電膜と該導電膜上
に形成されたオーバーコートガラス層で構成された2層
を得るようにした透明導電膜の作製方法。
A transparent conductive ink in which ultrafine oxide powder is dispersed in a solvent is applied on a glass substrate, dried and baked to form a conductive film made of ultrafine oxide powder. A paste containing glass frit is applied to the conductive film, dried, and baked at a temperature equal to or higher than the softening point of the glass frit, so that gaps between the ultrafine oxide powders are removed.
Conductive film filled with glass component of lath frit and on the conductive film
Layer composed of overcoat glass layer formed on
A method for manufacturing a transparent conductive film which is capable of obtaining a film .
【請求項2】 ガラスフリットが酸化物系ガラスである
請求項1に記載の透明導電膜の作製方法。
2. The method according to claim 1, wherein the glass frit is an oxide glass.
【請求項3】 ガラスフリットの軟化点以上の温度で焼
成する際、真空下でガラスフリットの軟化点以上の温度
まで昇温させるようにした、請求項1に記載の透明導電
膜の作製方法。
3. The method for producing a transparent conductive film according to claim 1, wherein when firing at a temperature higher than the softening point of the glass frit, the temperature is raised to a temperature higher than the softening point of the glass frit under vacuum.
JP04144413A 1992-06-04 1992-06-04 Method for manufacturing transparent conductive film Expired - Lifetime JP3141527B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP04144413A JP3141527B2 (en) 1992-06-04 1992-06-04 Method for manufacturing transparent conductive film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP04144413A JP3141527B2 (en) 1992-06-04 1992-06-04 Method for manufacturing transparent conductive film

Publications (2)

Publication Number Publication Date
JPH05342927A JPH05342927A (en) 1993-12-24
JP3141527B2 true JP3141527B2 (en) 2001-03-05

Family

ID=15361598

Family Applications (1)

Application Number Title Priority Date Filing Date
JP04144413A Expired - Lifetime JP3141527B2 (en) 1992-06-04 1992-06-04 Method for manufacturing transparent conductive film

Country Status (1)

Country Link
JP (1) JP3141527B2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4600685B2 (en) * 1994-05-25 2010-12-15 住友金属鉱山株式会社 UV and near infrared shielding glass
US5763091A (en) * 1994-10-27 1998-06-09 Sumitomo Metal Mining Co., Ltd. Electroconductive substrate and method for forming the same
JP5007777B2 (en) * 2000-05-21 2012-08-22 Tdk株式会社 Transparent conductive laminate
KR20040076104A (en) * 2003-02-24 2004-08-31 액세스나노 주식회사 A film for display device coated with nano particle of indume tin oxide
KR20100072910A (en) * 2008-12-22 2010-07-01 팜파스주식회사 Method for producing transparent substrate and led electronic bulletin board using the same

Also Published As

Publication number Publication date
JPH05342927A (en) 1993-12-24

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