JP3130843B2 - Test method for semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for testing a semiconductor device, and more particularly to a method for testing a semiconductor device related to protection of external leads of a semiconductor device in a high-temperature and high-humidity storage test.

[0002]

2. Description of the Related Art Acceleration tests of high-temperature and high-humidity storage tests using a pressure cooker test (hereinafter abbreviated as PCT) apparatus and the like have been conventionally performed in order to examine the long-term reliability of electrical characteristics of a semiconductor device in a short time. Have been done. The PCT test conditions are usually such that the pressure inside the PCT apparatus is 1 atmosphere or more and 10
The semiconductor device is stored in the atmosphere at a temperature of 0 to 130 ° C. and a relative humidity of 85% or more for 4 to 30 days, and changes in the electrical characteristics and the like of the semiconductor device main body are tested.

FIG. 5 is a model diagram showing a state in which an integrated circuit (IC) is left in a PCT apparatus and a high-temperature and high-humidity storage test is performed. As shown in FIG. 5, the table 7 in the PCT device 1
The device under test (IC4) is left for a certain period of time with the external leads 5 exposed, and the stability of the electrical characteristics of the IC4 is evaluated.

[0004]

A problem in the above-described method for testing a semiconductor device is that when the semiconductor device such as an IC having external leads is left in the PCT device, the external leads are exposed. As a result, the surface of the external lead is deteriorated due to dirt or oxidation, and the contact resistance of the external lead increases, so that the electrical characteristics of the semiconductor device (IC) after the high-temperature and high-humidity storage test cannot be measured. is there. FIG. 6 shows FIG.
5 is an enlarged cross-sectional view taken along the line C-C of FIG. 5, from which it can be seen that a surface contamination altered portion 6 is formed on the surface of the external lead 5.

As a method for preventing contamination, oxidation and the like of the external leads of the semiconductor device in a high-temperature and high-humidity storage test, a known technique of coating the external leads with an insulating material can be used.
It is necessary to peel off the insulating material after the test, and at the time of the peeling, there is a problem that the characteristics of the component to be tested are deteriorated and the number of test steps is increased.

As a method of improving the above-described technique of covering the lead terminals with an insulating material, a technique using a socket for a flat package IC and a carrier is disclosed in Japanese Patent Application Laid-Open No. 61-11761.
Although disclosed in Japanese Patent Publication No. 68, since the socket is zero-inserted and removed to prevent damage to the lead terminal, the contact pressure between the socket terminal and the lead terminal is weak, and the deterioration of the surface of the lead terminal cannot be prevented. .

SUMMARY OF THE INVENTION It is an object of the present invention to selectively protect a contact surface for measuring electrical characteristics of an external lead of a semiconductor device in a high-temperature and high-humidity storage test, to prevent the contact surface from being stained or deteriorated, and to store a high-temperature and high-humidity storage. It is an object of the present invention to provide a method of testing a semiconductor device which can evaluate the electrical characteristics of the semiconductor device after the test.

[0008]

According to a first aspect of the present invention, there is provided:
And an external connection portion to the tip, together from both ends of the outer casing
A semiconductor device having a through-hole mounting type external lead led out and formed in the opposite direction is set in a high-temperature and high-humidity storage test device, and an electrical characteristic of the semiconductor device is subjected to an accelerated test. in the method of testing, the external connecting portion surface fluoropolymer tree before <br/> Kigaibu lead the semiconductor device
While holding it from above and below with a grease material,
And fixing the fluoropolymer resin material with a fixing jig.
Do presses the external connection portion surface by the fluorine-based polymer resin
Then, the acceleration test was performed, and the pressing of the fluoropolymer resin material on the surface of the external connection portion was performed from the high-temperature and high-humidity environment during this test.
It is characterized in that the pressure surface is protected. Further, the second aspect of the present invention
The configuration has an external connection part at the tip and both ends of the outer case
From the surface mount type
High temperature and high humidity storage test equipment for semiconductor devices with external leads
To test the electrical characteristics of the semiconductor device.
Up and down in the back-to-back
The semiconductor device stacked on the
The surface of the connecting part is sandwiched from above and below with a fluoropolymer resin material and held
And the fluoropolymer resin through a spring material
Fix the material with a fixing jig and fix the surface of the external connection
Perform the above-mentioned acceleration test while pressing with elementary polymer resin material,
From the high temperature and high humidity environment at the time of this test,
Protecting the pressing surface of the fluoropolymer material
You.

As the heat-resistant resin material, a fluorine-based polymer resin material or a two-layer resin material in which the pressing surface side of the external connection portion is a fluorine-based polymer resin material and the opposite side is an elastic polymer resin material is used. can do.

In the present invention, in order to perform a high-temperature and high-humidity storage test by pressing a heat-resistant resin material on the surface of the external connection of the external lead of the semiconductor device, The contact portion of the measurement probe for evaluating the electrical characteristics of the semiconductor device can be protected from a high-temperature and high-humidity environment. In addition, by making the heat-resistant resin material elastic as described above, the pressing of the heat-resistant resin material to the external connection portion of the external lead is made uniform, and the effect of suppressing the generation of dirt and oxidation of the external connection portion is improved. Can be.

[0011]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described with reference to the drawings, in which an integrated circuit (IC) is used as a semiconductor device.

FIG. 1 is a schematic diagram of a PCT device for explaining a method of testing a semiconductor device according to a first embodiment of the present invention.

First, the heat-resistant resin material 2 is fixed to the outer surface of the external connection portion 5a of the external lead 5 of the through-hole mounting type IC 4 (the surface to be the contact surface of the electrical characteristic measuring probe) with the fixing jig 3. And press. The heat-resistant resin material 2 and the IC 4 fixed by the fixing jig 3 are set on a table 7 in a PCT apparatus, and are subjected to a pressure of 1 atm or more, a temperature of 100 to 130 ° C., and a relative humidity of 85% or more. 4 high temperature and high humidity storage tests
Perform for ~ 30 days. The outer surface of the external connection portion 5a (the surface to be the contact surface of the electrical characteristic measuring probe) is made of a heat-resistant resin material 2.
, It is protected from the high temperature and high humidity environment during the high temperature and high humidity storage test.

As a method of fixing the fixing jig 3 to the heat-resistant resin material 2, screwing can be generally used, but the pressing force of the heat-resistant resin material 2 is excessive by interposing a spring material at the screwed portion. Can be avoided. As a material of the fixing jig 3, a metal material such as a stainless steel material can be used.

As the heat-resistant resin material 2, a fluorine-based polymer resin material or a fluorine-based polymer resin material on the pressing surface side of the external connection portion 5a is an elastic polymer resin material on the opposite surface side.
A resin material having a layer structure can be used. As the elastic polymer resin material, a rubber elastic polymer resin material such as polybutadiene or polyurethane can be used.

The thickness of the heat resistant resin material 2 may be about 1 to 5 mm, but may be thicker. When a metal reinforcing plate is provided on the side of the heat-resistant resin material 2 opposite to the pressing surface of the external lead 5 of the IC 4, the thickness of the heat-resistant resin material 2 is 0.1
It can be made as thin as about 0.2 mm, and at the same time as the mechanical strength of the heat-resistant resin material 2 is added to the metal reinforcing plate to prevent static electricity (especially when an IC is fixedly set with a heat-resistant resin material and a fixing jig). Can have the role of.

FIG. 2 is an enlarged cross-sectional view taken along the line AA of FIG. 1 after the high-temperature and high-humidity storage test in the first embodiment, and has not been in contact with the external connection portion 5a of the heat-resistant resin material 2. Although the surface dirt deteriorated portion 6 is formed in the portion, it is shown that the portion that was in contact with the external connection portion 5a is free from dirt and deterioration.

FIG. 3 is a schematic diagram of the inside of a PCT apparatus for explaining a method of testing a semiconductor device according to a second embodiment of the present invention.

In this embodiment, a surface-mounted IC is used as the IC 4, the back-to-back IC is fixed to the heat-resistant resin material 2 with a fixing jig, and set on the table 7 of the PCT device 1. A high-temperature, high-humidity storage test similar to that of the first embodiment is performed. The surface mounting surface of the external connection portion 5a of the external lead 5 of the IC 4 is pressed by the heat-resistant resin material 2 and can be protected from the high-temperature and high-humidity environment in the high-temperature and high-humidity storage test.

FIG. 4 is an enlarged cross-sectional view taken along the line BB of FIG. 3. In the portion of the heat-resistant resin material 2 which has not been in contact with the external connection portion 5a, a surface-dirt altered portion 6 is formed. But
This indicates that no stain or deterioration occurs in the portion that has been in contact with the external connection portion 5a.

[0021]

The effect of the present invention is that a predetermined surface portion of an external lead of a semiconductor device is protected from a high-temperature and high-humidity environment in a high-temperature and high-humidity storage test, and the external lead is used for evaluating electrical characteristics after the test. The object is to ensure a contact surface of the measurement probe and prevent a contact failure.

The present invention can be applied not only to semiconductor devices having external leads but also to high-temperature and high-humidity storage tests of through-hole mounting and surface-mount type electronic components having other external leads.

[Brief description of the drawings]

FIG. 1 is a schematic diagram of a PCT device for describing a test method of a semiconductor device according to a first embodiment of the present invention.

FIG. 2 is an enlarged sectional view taken along line AA of FIG.

FIG. 3 is a schematic diagram inside a PCT device for explaining a test method of a semiconductor device according to a second embodiment of the present invention.

FIG. 4 is an enlarged sectional view taken along the line BB of FIG. 3;

FIG. 5 is a PCT illustrating a conventional method for testing a semiconductor device.
FIG. 2 is a schematic diagram of the inside of the device.

FIG. 6 is an enlarged sectional view taken along the line CC of FIG. 5;

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 PCT apparatus 2 Heat resistant resin material 3 Fixing jig 4 IC 5 External lead 5a External connection part 6 Surface dirt deteriorated part 7 Stand

Claims (4)

(57) [Claims] An external case is provided at an end of the outer case.
Molded through holes drawn out from both ends in opposite directions
By setting the semiconductor device having a Lumpur-mounted external leads of the high-temperature and high-humidity storage test apparatus, the test method of a semiconductor device for an accelerated test the electrical characteristics of the semiconductor device, wherein
The semiconductor device is connected to the external connection surface of the external lead by a flash.
It is sandwiched and held with nitrogen-based polymer resin material from above and below.
Then, the fluoropolymer resin material is fixed and fixed via a spring material.
Fix the surface of the external connection section with a tool
Perform the acceleration test while pressing with a resin material, and from the high temperature and high humidity environment at the time of this test, the fluorine-based
A method for testing a semiconductor device, comprising protecting a pressing surface of a polymer resin material . 2. An external case having an external connection portion at an end thereof.
Molded surface mount derived from opposite ends in opposite directions
Temperature and high humidity storage test for semiconductor devices with external leads
Accelerate the electrical characteristics of the semiconductor device by setting it in the device
In the test method of the semiconductor device to be tested,
The semiconductor device stacked vertically is placed outside the external lead.
Between the top and bottom of the connection part with fluoropolymer resin material from above and below
While holding, the above-mentioned fluoropolymer through a spring material
Fix the resin material with a fixing jig and fix the surface of the external connection
Perform the acceleration test while pressing with a fluoropolymer resin material.
From the high temperature and high humidity environment during this test
Characterized in that the pressing surface of the fluorine-based polymer material is protected.
Semiconductor device testing method . Wherein the outer re of the fluorine-based polymer resin
The method of testing a semiconductor device according to claim 1 or 2, wherein using the opposite resin material having a two-layer structure is a resilient polymeric resin material is over de contact. 4. The method for testing a semiconductor device according to claim 1, wherein a metal reinforcing plate is provided on a surface of the fluorine-based polymer resin material opposite to the pressing surface side of the surface of the external connection portion.