JP3129294B2 - Active matrix liquid crystal display - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a liquid crystal display device, and more particularly to an active matrix type liquid crystal display device using a lateral electric field driving method.

[0002]

2. Description of the Related Art Thin-film field-effect transistors (hereinafter referred to as T
An active matrix type liquid crystal display device using FT as a pixel switching element has a high quality image quality and is widely used as a display device of a portable computer or a monitor of a space-saving desktop computer in recent years. .

In recent years, a display method using a horizontal electric field has been proposed in Japanese Patent Application Laid-Open No. 09-329813 in order to improve the viewing angle characteristics for the purpose of improving the image quality of a liquid crystal display device. A conventional lateral electric field active matrix type liquid crystal display device will be described with reference to FIGS. 4A and 4B are diagrams for explaining the structure of a conventional lateral electric field active matrix liquid crystal display device. FIG. 4A is a plan view of one pixel, and FIG. It is sectional drawing in the -B 'line. FIG.
FIG. 6 is a cross-sectional view schematically showing the flow of electric charges, and FIG.
FIG. 9 is a diagram showing an equivalent circuit of a conventional lateral electric field active matrix liquid crystal display device.

In this method, a pixel electrode 2 and a counter electrode 1 are formed in parallel with each other on a first transparent insulating substrate 18 on which a TFT is to be formed, and a voltage is applied between them to apply a voltage parallel to the substrate surface. By forming an electric field, the direction of the anisotropic axis (director) of the liquid crystal is changed, thereby controlling the amount of transmitted light. In this method, since the director rotates in the plane of the substrate, a good image without gradation inversion can be obtained from a very wide viewing angle.

[0005]

However, in the conventional active-matrix liquid crystal display device of a horizontal electric field, an electric field is applied in the horizontal direction, so that it faces the first transparent insulating substrate 18 on which the TFT is formed. Usually, there is no transparent electrode on the liquid crystal layer side of the second substrate forming the color filter. Therefore, the color layer 12 and the black matrix 10 of the color filter (hereinafter abbreviated as CF) formed on the liquid crystal layer 17 side of the second transparent insulating substrate 9 are not electrically shielded.

For this reason, the potential of the black matrix 10 is fluctuated under the influence of various potentials applied inside the active matrix liquid crystal display panel and becomes a potential different from the common potential, as shown in FIG. A current flows to the display portion via the color layer 12 having the next lower resistance after the black matrix 10, and an equivalent circuit as shown in FIG. 6 is formed from the black matrix 10 having the lower resistance toward the color layer 12.
As a result, charges are accumulated in the color layer 12 in the display area of each pixel, which causes a residual image.

As one method for preventing such a phenomenon, as disclosed in Japanese Patent Application Laid-Open No. 10-073810, the current from the black matrix to the color layer is increased by increasing the resistance of the black matrix itself. Can be considered. However, in this method, the black matrix material is limited, and it is difficult to increase the light absorptance per unit film thickness. Further, the black matrix material is directly affected by the potential of the opposing TFT substrate side. Changes in the display panel surface, and this appears as display unevenness. Therefore, it is necessary to consider the averaging of these potentials, and there is a problem that the design becomes complicated.

Another method is disclosed in Japanese Patent Application Laid-Open No. 9-2695.
As proposed in Japanese Patent Application Laid-Open No. 04-2004, a method is also conceivable in which the black matrix material has a low resistance and is kept at the same potential as the common electrode. However, in this method, it is necessary to expose the black matrix in the surroundings, so that there is a problem that the process of manufacturing the color filter is complicated.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and a main object of the present invention is to secure a sufficient margin such as a wiring structure on a TFT substrate side and to complicate a process of manufacturing a color filter. Instead, it is intended to provide a good horizontal electric field drive type active matrix liquid crystal display device with little afterimage.

[0010]

In order to achieve the above-mentioned object, an active matrix liquid crystal display device according to the present invention comprises:
A plurality of scanning lines and a plurality of signal lines, and a thin film transistor provided near each intersection of the scanning lines and the signal lines on the first substrate;
A pixel electrode connected to the thin film transistor, and a counter electrode provided so as to face the pixel electrode; and a black substrate having an opening in a region facing the pixel electrode on a second substrate. A matrix, and three types of color layers corresponding to three colors of RGB, and by generating an electric field substantially parallel to the liquid crystal layer with a voltage applied between the pixel electrode and the counter electrode, In a lateral electric field driving type active matrix liquid crystal display device for controlling liquid crystal sandwiched between two opposing substrates, at least one or more of the three types of color layers is provided. And the black matrix, between the color layer and the black matrix.
Thickness and specific resistance to the extent that the flow of charge between
A predetermined insulating film in which is set is provided.
The predetermined insulating film has a thickness of 0.5 μm or more,
It preferably has a specific resistance of 10 ¹² Ωcm or more.

Further, the present invention has two opposing transparent insulating substrates, and on a first substrate, a plurality of scanning lines and a plurality of signal lines, and each of the scanning lines and the signal lines. A thin film transistor provided in the vicinity of the intersection, a pixel electrode connected to the thin film transistor, and a counter electrode provided so as to face the pixel electrode; A black matrix having an opening in a region to be formed, and three types of color layers corresponding to three colors of RGB, and a voltage substantially parallel to the liquid crystal layer by a voltage applied between the pixel electrode and the counter electrode. By controlling the liquid crystal sandwiched between the two opposing substrates by generating an electric field.
In a lateral electric field driving type active matrix liquid crystal display device, of the three kinds of color layers, and each of at least a plurality of color layers, between the black matrix, wherein
Blocks the flow of charge between the color layer and the black matrix.
The thickness of the liquid crystal layer corresponding to the three types of color layers can be increased by disposing predetermined insulating films having different thicknesses and film thicknesses and specific resistances so that the liquid crystal layers correspond to the three color layers. Are set to different predetermined thicknesses. The thickness of the predetermined insulating film is set such that the thickness of each of the liquid crystal layers corresponding to the three types of color layers is substantially proportional to the wavelength of each light transmitted through the color layers. Preferably.

In the present invention, the specific resistance of the black matrix is 10 ⁶ Ωcm or less, and the specific resistance of the color layer, on which the predetermined insulating film is provided, is 10 ¹⁰ Ωcm or less. Is preferably
The insulating film may be made of a resin film or an inorganic insulating film.

[0013]

BEST MODE FOR CARRYING OUT THE INVENTION In a preferred embodiment, an active matrix liquid crystal display device according to the present invention has two opposing transparent insulating substrates and a first substrate (see FIG. 1B). 18) has a scanning line, a signal line, a thin film transistor, a pixel electrode, and an opposing electrode on the upper surface, and opposes the pixel electrode on a second substrate (9 in FIG. 1B). Black matrix having an opening in the region
7) of (b) and three color layers of RGB (1 in FIG. 1 (b)).
And 2) controlling the liquid crystal sandwiched between the two opposing substrates with an electric field substantially parallel to the liquid crystal layer, wherein at least one of the three color layers A transparent insulating film (11 in FIG. 1B) having a predetermined thickness and specific resistance is disposed between one or more color layers and the black matrix.

[0014]

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a block diagram showing an embodiment of the present invention;

Embodiment 1 An active matrix liquid crystal display device according to a first embodiment of the present invention will be described with reference to FIG. FIG. 1 is a diagram for explaining the structure of an active matrix liquid crystal display device, and FIG.
FIG. 1B is a plan view of one pixel, and FIG.
3 is a sectional view taken along line AA ′ of FIG.

First, a method for manufacturing a TFT substrate will be described. On the TFT side substrate, a scanning line 3, a counter electrode wiring 4,
And a Cr film of 250 as a metal layer to be the counter electrode 1.
It is deposited with a thickness of about nm, and is patterned. A silicon nitride film of about 400 nm, an amorphous silicon film of about 300 nm, and an n-type amorphous silicon film of about 30 nm are successively deposited thereon as a gate insulating film. The crystalline silicon film is patterned into the shape of the island-shaped amorphous silicon 6. Next, a Cr film is deposited as a metal layer to be the signal line 5 and the pixel electrode 2 to a thickness of about 250 nm, and is patterned. Further, a silicon nitride film having a thickness of about 200 nm is deposited as the protective insulating film 15 and is removed at the scanning line extraction terminal and the signal line extraction terminal.

Next, a method of manufacturing a CF substrate will be described. A resin composition containing carbon particles is deposited to a thickness of about 1.3 μm on the second transparent insulating substrate 9 on the CF side,
Patterning is performed so as to open the inside of the edge indicated by 7 in FIG. 1A at a position where the signal lines and scanning lines on the FT side and the vicinity thereof are shielded from light. The volume resistivity of the black matrix thus formed is 10 ³ to 10 ⁵ Ωc.
m. Further, a transparent acrylic resin is formed on the entire surface to a thickness of 1.0 μm or more. As the acrylic resin, for example, a resin having a specific resistance of 10 ¹⁴ Ωcm or more and high transparency is used.

Further, color layers for each of RGB are formed with a thickness of about 1.2 μm on this, and are patterned.
At this time, the resistivity of the respective RGB color layer, R ¹⁰ 10-1
0 ¹² Ωcm, G is 10 ⁹ to 10 ¹¹ Ωcm, B is 10 ⁸ to 1
0 ¹⁰ Ωcm. Next, a transparent acrylic resin is again formed as an overcoat layer with a thickness of about 1.0 μm.

An alignment film 14 is applied on the TFT substrate and the CF substrate manufactured by the above-described steps, and rubbed in a direction at an angle of 15 degrees with the longitudinal direction of the pixel electrode. And after applying the sealing material and spraying the spacer,
Both are pasted together, and liquid crystal is injected into this and sealed.
Here, the cell gap of the liquid crystal layer is 4.5 μm, and the refractive index anisotropy Δn of the injected liquid crystal is 0.070. The polarizing axis of the polarizing plate is set in parallel with the rubbing direction, and the polarizing axis of the TFT-side polarizing plate is set in a direction perpendicular to the rubbing direction.

Next, the structure of the active matrix liquid crystal display device thus manufactured will be described. The signal lines 5, the scanning lines 3, and the
The thin film transistor arranged at these intersections, the pixel electrode 2 connected thereto, the counter electrode wiring 4, and the counter electrode 1 connected thereto are arranged. Pixel electrode 2
The counter electrode 1 has a longitudinal direction in a direction parallel to the signal line 5, and by applying a potential difference between the two, an electric field substantially parallel to the substrate can be applied in a direction perpendicular to the longitudinal direction.

On the second transparent insulating substrate 9, a black matrix 10 provided to shield light from the bus lines and between the bus lines and the display unit, a color layer 12 provided to perform color display, and a color layer An overcoat layer 13 is formed so as to cover the layer 12, and a transparent insulating film 11 having a thickness of 1 μm or more is uniformly formed on the entire surface under the color layer 12.

The black matrix 10 is formed of a resin containing carbon particles and has a specific resistance of 10 ³ to 10 ^5.
Ωcm. At least one of the R (red), G (green), and B (blue) color layers has a resistivity of 10 ¹⁰ Ωcm or less. Usually, particularly, the pigment contained in the blue color layer has a certain degree of conductivity, so that the specific resistance is often 10 ¹⁰ Ωcm or less. Overcoat layer 13 and transparent insulating film 11
Was made to be 10 ¹² Ωcm or more.

An alignment film 14 is applied on the surfaces of both substrates, and a liquid crystal layer 17 is disposed between the substrates. Liquid crystal layer 1
Numeral 7 is homogeneously oriented in a direction forming an angle in a range of 5 degrees to 40 degrees with respect to the longitudinal direction of the pixel electrode 2.
Polarizing plates 8 are attached to the outside of both substrates, the polarizing axes of both polarizing plates 8 are orthogonal to each other, and one of the polarizing axes is set parallel to the orientation direction of the liquid crystal. A constant common potential is supplied to all the counter electrodes 1 through the counter electrode wiring 4, and a potential is written to the pixel electrode 2 via a thin film transistor, and a liquid crystal is twist-deformed by applying a lateral electric field to control display. I do.

The black matrix 10 is capacitively coupled to the scanning lines 3 and the signal lines 5 and the like, and is thus affected by these potentials and has a potential different from the common potential. Normally, the time average of the potential of the pixel electrode 2 is substantially equal to the common potential. Therefore, in a region where a horizontal electric field is applied to the liquid crystal by the counter electrode 1 and the pixel electrode 2, the time average of the potential is common even on the counter substrate side. Try to be equal to the potential. On the other hand, since the black matrix 10 has a potential different from the common potential, a potential difference occurs between the black matrix 10 and the color layer 12.

In the case of the active matrix liquid crystal display device having the conventional structure shown in FIG. 4, the transparent insulating film 11 does not exist between the color layer 12 and the black matrix 10, and they are in direct contact with each other. Normally, one of the RGB color layers 12 has a specific resistance of 10 ¹⁰ Ωcm or less. Therefore, an equivalent circuit as shown in FIG. 6 is formed from the black matrix 10 having a low resistance toward the color layer 12. Color layer 1 in pixel display area
2 accumulates charges and changes the transmittance of the display unit,
Causes afterimages.

On the other hand, in the first embodiment of the present invention,
Although the potential of the black matrix fluctuates due to capacitive coupling with the scanning lines and the signal lines, since the transparent insulating film 11 exists between the color layer 12 and the black matrix 10, the flow of charges is cut off, and the afterimage is generated. The phenomenon can be significantly suppressed, and good display characteristics without display abnormality can be obtained.

Second Embodiment Next, a second embodiment of the present invention will be described with reference to FIG. FIG. 2 is a cross-sectional view showing the structure of the active matrix liquid crystal display device according to the second embodiment, and shows a cross section taken along line AA ′ of FIG.

First, a method of manufacturing the active matrix liquid crystal display device according to the second embodiment will be described. Note that T
The FT substrate side has exactly the same structure as in the first embodiment, and is manufactured in the same process.

A method of manufacturing a CF substrate will be described.
On the second transparent insulating substrate 9 on the CF side, a resin composition containing carbon particles is deposited to a thickness of about 1.3 μm,
Patterning is performed so as to open the inside of the edge indicated by 7 in FIG. 1A at a position where the signal lines and scanning lines on the side and the vicinity thereof are shielded from light. The volume resistivity of the formed black matrix is 10 ⁴ to 10 ⁵ Ωcm.

Further, an R color layer having a thickness of about 1.2 μm is formed thereon and patterned. Next, a G color layer is formed with a thickness of 1.2 μm, and is patterned.
At this time, the resistivity of the respective RGB color layer, R ¹⁰ 10-1
0 ¹² Ωcm, G is 10 ⁹ to 10 ¹¹ Ωcm, B is 10 ⁸ to 1
0 ¹⁰ Ωcm. On top of this, a transparent acrylic resin is formed over the entire surface with a thickness of 1.0 μm or more, and a B color layer is further formed thereon with a thickness of about 1.2 μm. Form. Further, a transparent acrylic resin is formed on the entire surface with a thickness of 1.0 μm. As the acrylic resin, a resin having a specific resistance of 10 ¹⁴ Ωcm or more and high transparency is used.

A liquid crystal display panel is formed by using the TFT substrate and the CF substrate manufactured by the above steps in exactly the same manner as in the first embodiment.

As described above, in the active matrix liquid crystal display device of the present embodiment, the structure on the second transparent insulating substrate 9 differs from that of the first embodiment in that the black matrix 10 and the color layer 12 are different from each other. The transparent insulating film 11 disposed between
Only under the color layer 12 having a specific resistance of less than 10 ¹⁰ Ωcm, the same pattern is formed with a thickness of 1 μm or more. Even with such a structure, the flow of charges between the color layer 12 and the black matrix 10 can be blocked, and the afterimage can be suppressed, as in the first embodiment.

Embodiment 3 Next, a third embodiment of the present invention will be described with reference to FIG. FIG. 3 is a cross-sectional view showing a configuration of an active matrix liquid crystal display device according to a third embodiment of the present invention, and shows a cross section taken along line AA ′ of FIG. The TFT substrate has the same structure as that of the first embodiment and is manufactured in the same process.

A method for manufacturing a CF substrate will be described.
On the second transparent insulating substrate 9 on the CF side, a resin composition containing carbon particles is deposited to a thickness of about 1.3 μm,
Patterning is performed so as to open the inside of the edge indicated by 7 in FIG. 1A at a position where the signal lines and scanning lines on the side and the vicinity thereof are shielded from light. The volume resistivity of the formed black matrix is 10 ⁴ to 10 ⁵ Ωcm.

Further, an R color layer is formed thereon with a thickness of about 1.2 μm, and is patterned. Next, a transparent acrylic resin is formed with a thickness of about 0.8 μm, a G color layer is formed thereon with a thickness of 1.2 μm, and these two layers are formed with the same pattern. Next, a transparent acrylic resin was used for 1.
8 μm thick, and a B color layer on top of this is 1.2 μm thick.
The two layers are formed with the same pattern.

At this time, the specific resistance of each color layer of RGB is R
Is 10^Ten-10¹²Ωcm, G is 10 ⁹-10¹¹Ωcm,
B is 10⁸-10^TenΩcm. Furthermore, on top of this
A clear acrylic resin is formed on the entire surface with a thickness of 1.0 μm.
This acrylic resin has a specific resistance of 10¹⁴Ωcm or more
With high transparency. Final finished state
In the state, the G pixel is set with reference to the display area surface of the R pixel.
Has a height of 0.5 μm, and the surface of the B pixel
The display area surface has a height of 1.2 μm.

An orientation film 14 is applied on the TFT substrate and the CF substrate manufactured by the above-described steps, and rubbed in a direction at an angle of 15 degrees with the longitudinal direction of the pixel electrode. Then, after applying a sealing material and spraying a spacer, both were adhered, and liquid crystal was injected into the two and sealed. Here, the diameter of the liquid crystal layer 17 is controlled by controlling the diameter of the spacer agent.
Is controlled to be 3.8 μm in the display pixels of the blue color layer. Then, due to the difference in height of the RGB pixels in the display section, the cell gap in the display pixel of the green color layer is 4.5 μm, and the cell gap in the display pixel of the red color layer is 5.0 μm. As a result, the thickness of the liquid crystal layer 17 in each of the R, G, and B pixels and the wavelength of light transmitted through the color layer 12 have a substantially proportional relationship. Further, a polarizing plate forming a cross Nicol was attached so as to sandwich this. The polarization axis of the CF-side polarizing plate is parallel to the rubbing direction,
The polarization axis of the side polarizing plate was set in a direction perpendicular to this.

As described above, in the active matrix liquid crystal display device of the present embodiment, the structure on the second transparent insulating substrate 9 differs from that of the first embodiment in that the black matrix 10 and the color layer 12 are different from each other. Transparent insulating film 11 disposed between
Is formed under the blue color layer 12 having a small specific resistance to be thick with the same pattern, and is formed under the green color layer 12 to be thin. As described above, by forming the insulating film thicker as the specific resistance of the color layer decreases, the flow of electric charges between the color layer 12 and the black matrix 10 can be more effectively blocked, and the afterimage can be reduced. Can be suppressed.

Further, in the structure of this embodiment, since the thickness of the transparent insulating film 11 corresponding to each color of RGB is different, a step is formed on the substrate, and the thickness of the liquid crystal layer 17 corresponding to each color of RGB is changed. , The thickness of the liquid crystal layer 17 is
By setting the value to a value proportional to the wavelength of the transmittance peak of each color B, a multi-gap cell can be formed, whereby a favorable display without coloring when viewed from an oblique direction can be obtained.

In the above-described first to third embodiments, an acrylic resin is used as the transparent insulating film for insulating the black matrix from the color layer. However, as this transparent insulating film, an inorganic silicon oxide film is used. May be used. The transparent insulating film can be formed using a vacuum device such as CVD, or can be formed in the form of a coating film. Further, another inorganic insulating film may be used.

[0041]

As described in detail above, in the lateral electric field driving type active matrix liquid crystal display device of the present invention,
Even when the potential of the black matrix fluctuates, it is possible to prevent the injection of charges into the color layer, and it is possible to obtain a good display with little afterimage at a wide viewing angle.

The reason is that in the present invention, the color layer and the black matrix are provided between the color layer and the black matrix.
Film thickness and specific resistance to the extent that the flow of charge between
This is because the electric charge flowing out of the black matrix is not accumulated in the color layer because the set insulating film is formed. Further, in the present invention, by setting the thickness of the liquid crystal layer corresponding to each color of RGB to a value proportional to the wavelength of the transmittance peak of each color of RGB, a multi-gap cell can be formed. There is an effect that a good display without coloring can be obtained when viewed from above.

[Brief description of the drawings]

FIG. 1 is a diagram for explaining the structure of an active matrix liquid crystal display device according to a first embodiment of the present invention. FIG. 1A is a plan view of one pixel of a liquid crystal panel, and FIG. )
FIG. 3A is a cross-sectional view taken along line AA ′ of FIG.

FIG. 2 is a diagram for explaining a structure of an active matrix liquid crystal display device according to a second embodiment of the present invention, and is a cross-sectional view taken along line AA ′ of FIG.

FIG. 3 is a diagram for explaining a structure of an active matrix liquid crystal display device according to a third embodiment of the present invention, and is a cross-sectional view taken along line AA ′ of FIG.

FIG. 4 is a diagram of a conventional active matrix liquid crystal display device. FIG. 4A is a plan view of one pixel of a liquid crystal panel,
FIG. 4B is a cross-sectional view taken along line BB ′ of FIG.

FIG. 5 is a cross-sectional view schematically showing a flow of charges in a conventional active matrix liquid crystal display device.

FIG. 6 is an equivalent circuit diagram for explaining a problem in a conventional structure.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Counter electrode 2 Pixel electrode 3 Scanning line 4 Counter electrode wiring 5 Signal line 6 Island-shaped amorphous silicon 7 Edge of black matrix 8 Polarizing plate 9 Second transparent insulating substrate 10 Black matrix 11 Transparent insulating film 12 Color layer 13 Overcoat layer 14 Alignment film 15 Protective insulating film 16 Gate insulating film 17 Liquid crystal layer 18 First transparent insulating substrate 19 Current flowing through color layer

──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. ⁷ , DB name) G02F 1/1343 G02F 1/1335 G02F 1/1368

Claims (7)

(57) [Claims] 1. A semiconductor device comprising: two opposing transparent insulating substrates; a first substrate having a plurality of scanning lines and a plurality of signal lines;
A second substrate including a thin film transistor provided near each intersection of the scanning line and the signal line, a pixel electrode connected to the thin film transistor, and a counter electrode provided to face the pixel electrode; A black matrix having an opening in a region facing the pixel electrode,
And three types of color layers corresponding to the three colors, and an electric field substantially parallel to the liquid crystal layer is generated by a voltage applied between the pixel electrode and the counter electrode, so that the two opposite layers are opposed to each other. Lateral electric field drive type to control liquid crystal sandwiched between moving substrates
In the active matrix liquid crystal display device of the above, between the at least one color layer of the three types of color layers and the black matrix, the color layer and the color layer
The degree of blocking the flow of electric charge to and from the black matrix
An active matrix liquid crystal display device, wherein a predetermined insulating film having a set film thickness and specific resistance is provided thereon. 2. A semiconductor device comprising: two opposing transparent insulating substrates; a plurality of scanning lines and a plurality of signal lines on a first substrate;
A second substrate including a thin film transistor provided near each intersection of the scanning line and the signal line, a pixel electrode connected to the thin film transistor, and a counter electrode provided to face the pixel electrode; A black matrix having an opening in a region facing the pixel electrode,
And three types of color layers corresponding to the three colors, and an electric field substantially parallel to the liquid crystal layer is generated by a voltage applied between the pixel electrode and the counter electrode, so that the two opposite layers are opposed to each other. Lateral electric field drive type to control liquid crystal sandwiched between moving substrates
In an active matrix liquid crystal display device, of the three kinds of color layers, and each of at least a plurality of color layers, between the black matrix, the said color layer
The degree of blocking the flow of electric charge to and from the black matrix
The thickness of the liquid crystal layer corresponding to the three kinds of color layers is different by providing a predetermined insulating film having different thicknesses, the insulating films having different thicknesses and specific resistances. An active matrix liquid crystal display device, wherein: 3. The black matrix has a specific resistance of 10 ^6.
Ωcm or less, and the specific resistance of the color layer in which the predetermined insulating film is provided between the color layer and the black matrix is 10 ¹⁰ Ωcm or less. 3. The active matrix liquid crystal display device according to 2. 4. The active matrix liquid crystal display device according to claim 1, wherein said predetermined insulating film has a thickness of 0.5 μm or more and a specific resistance of 10 ¹² Ωcm or more. 5. The thickness of the predetermined insulating film such that the thickness of each of the liquid crystal layers corresponding to the three types of color layers is substantially proportional to the wavelength of each light transmitted through the color layers. The active matrix liquid crystal display device according to claim 2, wherein the following is set. 6. The active matrix liquid crystal display device according to claim 4, wherein said predetermined insulating film is formed of a resin film. 7. The active matrix liquid crystal display device according to claim 4, wherein said predetermined insulating film comprises an inorganic insulating film.