JP3128717B2 - Bump forming method - Google Patents
Bump forming methodInfo
- Publication number
- JP3128717B2 JP3128717B2 JP05186998A JP18699893A JP3128717B2 JP 3128717 B2 JP3128717 B2 JP 3128717B2 JP 05186998 A JP05186998 A JP 05186998A JP 18699893 A JP18699893 A JP 18699893A JP 3128717 B2 JP3128717 B2 JP 3128717B2
- Authority
- JP
- Japan
- Prior art keywords
- capillary
- wire
- bump
- ball
- clamper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体デバイスの電極
上にバンプを形成する方法に関する。The present invention relates to a method for forming a bump on an electrode of a semiconductor device.
【０００２】[0002]
【従来の技術】従来、ワイヤボンデイング装置を利用し
て半導体デバイスの電極上にバンプを形成する方法とし
て、例えば特開昭５４ー２６６２号公報（第１の方法）
及び特公平４ー４１５１９号公報（第１及び第２の方
法）に示すものが知られている。2. Description of the Related Art Conventionally, as a method of forming a bump on an electrode of a semiconductor device using a wire bonding apparatus, for example, Japanese Patent Application Laid-Open No. Sho 54-2662 (first method)
And Japanese Patent Publication No. 4-41519 (first and second methods) are known.
【０００３】第１の方法は、ワイヤボンデイング装置の
キャピラリに挿通されたワイヤに放電等によってボール
を形成する。次にキャピラリを下降させてボールを１つ
の半導体デバイスの電極上に押し付ける。その後、キャ
ピラリを僅かに上昇させる。次にクランパを閉じてワイ
ヤをクランプし、キャピラリ及びクランパを上昇させて
ボールを切断する。これにより、電極上にバンプが形成
される。In the first method, a ball is formed on a wire inserted into a capillary of a wire bonding apparatus by electric discharge or the like. Next, the capillary is lowered to press the ball onto the electrode of one semiconductor device. Thereafter, the capillary is raised slightly. Next, the clamper is closed, the wire is clamped, and the capillary and the clamper are raised to cut the ball. Thereby, a bump is formed on the electrode.
【０００４】第２の方法は、ボール形成して該ボールを
電極上に押し付けるまでの動作は前記第１の方法と同じ
であるが、電極上にボールを押し付けた後は、キャピラ
リを上昇及び横方向に少距離だけ移動させ、次にキャピ
ラリを再び下降させてワイヤに脆弱部を形成する。その
後は再びキャピラリを上昇させる。そして、クランパを
閉じてワイヤをクランプし、キャピラリ及びクランパを
上昇させてボールを切断する。これにより、電極上にバ
ンプが形成される。In the second method, the operation from the formation of a ball to the pressing of the ball onto the electrode is the same as that of the first method, but after the ball is pressed on the electrode, the capillary is raised and moved sideways. In the direction, and then lower the capillary again to form a weakness in the wire. After that, the capillary is raised again. Then, the clamper is closed to clamp the wire, and the ball is cut by raising the capillary and the clamper. Thereby, a bump is formed on the electrode.
【０００５】[0005]
【発明が解決しようとする課題】前記第１の方法は、ボ
ールを電極上に押し付けた後、キャピラリを上昇させて
切断してバンプを形成するので、図４（ａ）に示すよう
に、バンプ３のほぼ中央部にひげ４（バンプ３上面の微
小突起）が残り、バンプ３の上面のばらつきが大きいと
いう問題点があった。なお、図中、１は半導体デバイ
ス、２は電極を示す。According to the first method, after a ball is pressed onto an electrode, a capillary is raised and cut to form a bump. Therefore, as shown in FIG. There is a problem that the whiskers 4 (fine projections on the upper surface of the bump 3) remain at almost the center of the 3 and the variation on the upper surface of the bump 3 is large. In the drawings, 1 indicates a semiconductor device, and 2 indicates an electrode.
【０００６】前記第２の方法は、ボールを電極上に押し
付けた後、キャピラリを上昇及び横方向に移動させるの
で、図４（ｂ）に示すように、バンプ３のほぼ中央部に
はひげ４は残らない。しかし、ボールを電極上に押し付
けた後のキャピラリの上昇及び横方向移動により、バン
プ３の上面形状が安定しなく、やはりバンプ３上面のば
らつきが大きいという問題点を有する。またキャピラリ
を横方向に移動させ、再びキャピラリを下降させて脆弱
部を形成させるが、その後のワイヤを切断する動作はど
うしてもキャピラリを上昇させる動作によって行わざる
を得なく、この動作によってバンプ３の端部に上方に突
出したひげ４の発生は避けられない。In the second method, after the ball is pressed onto the electrode, the capillary is lifted and moved in the lateral direction. As shown in FIG. Does not remain. However, there is a problem that the shape of the upper surface of the bump 3 is not stable due to the upward movement and the lateral movement of the capillary after the ball is pressed onto the electrode, and the unevenness of the upper surface of the bump 3 is also large. In addition, the capillary is moved in the lateral direction, and the capillary is lowered again to form a fragile portion. However, the subsequent operation of cutting the wire is inevitably performed by the operation of raising the capillary. It is inevitable that the whiskers 4 protruding upward at the portions will occur.
【０００７】本発明の目的は、バンプ上面の安定化が図
れるバンプ形成方法を提供することにある。An object of the present invention is to provide a bump forming method capable of stabilizing the upper surface of a bump.
【０００８】[0008]
【課題を解決するための手段】上記目的を達成するため
の本発明の構成は、キャピラリに挿通されたワイヤにボ
ールを形成し、このボールを半導体デバイスの電極に押
し付け、その後キャピラリを上昇させてボールとワイヤ
の付け根部分からワイヤを切断して電極上にバンプを形
成する動作を行った後、キャピラリの先端より延在して
いるワイヤをキャピラリ内に引っ込める動作を行わせ、
次にキャピラリの下面の平らな面で前記バンプのひげを
潰すことを特徴とする。In order to achieve the above object, according to the present invention, a ball is formed on a wire inserted into a capillary, the ball is pressed against an electrode of a semiconductor device, and then the capillary is raised. After performing the operation of cutting the wire from the ball and the root of the wire to form a bump on the electrode, perform the operation of retracting the wire extending from the tip of the capillary into the capillary,
Next, remove the beard of the bump on the flat surface on the lower surface of the capillary.
It is characterized by crushing .
【０００９】[0009]
【作用】キャピラリの下面に形成されたボールを電極上
に押し付け、その後キャピラリを上昇させてボールを切
断して電極上にバンプを形成すると、バンプのほぼ中央
部には小さな突起条のひげが残る。そこで、バンプ形成
完了後、キャピラリの先端より延在しているワイヤをキ
ャピラリ内に引っ込め、キャピラリの平らな下面部分で
前記ひげを潰す。これにより、バンプの上面は平らにな
り安定化する。When the ball formed on the lower surface of the capillary is pressed onto the electrode, and then the capillary is raised and the ball is cut to form a bump on the electrode, a small whisker remains at the approximate center of the bump. . Therefore, after completion of the bump formation, the wire extending from the tip of the capillary is retracted into the capillary, and the beard is crushed by the flat lower surface of the capillary. As a result, the upper surface of the bump becomes flat and stable.
【００１０】[0010]
【実施例】以下、本発明の一実施例を図１乃至図３によ
り説明する。なお、本実施例は、２つの第１クランパ５
及び第２クランパ６を有し、第１クランパ５がキャピラ
リ７と共に上下動可能で、第２クランパ６が上下動しな
いワイヤボンデイング装置を用いた。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below with reference to FIGS. In this embodiment, two first clampers 5 are provided.
A wire bonding apparatus having a first clamper 5 that can move up and down together with the capillary 7 and a second clamper 6 that does not move up and down.
【００１１】まず、図１（ａ）に示すように、第１クラ
ンパ５が閉じた状態で、キャピラリ７に挿通されたワイ
ヤ８に放電等によってボール９を形成する。次に第１ク
ランパ５が開き、図１（ｂ）に示すように、キャピラリ
７を下降させてボール９を半導体デバイス１の電極２上
に押し付ける。次に図１（ｃ）に示すように、キャピラ
リ７を僅かに上昇させる。その後第１クランパ５を閉じ
てワイヤ８をクランプし、図１（ｄ）に示すように、第
１クランパ５及びキャピラリ７を上昇させてボール９と
ワイヤ８の付け根部分からワイヤ８を切断する。これに
より、電極２上にはバンプ３が形成される。このバンプ
形成方法は、従来の技術の項で説明した第１の方法と同
じである。従って、バンプ３には図４に示すようにひげ
４が存在する。前記したバンプ形成動作を１つの半導体
デバイス１の全ての電極２上に行う。First, as shown in FIG. 1A, with the first clamper 5 closed, a ball 9 is formed on the wire 8 inserted into the capillary 7 by discharging or the like. Next, the first clamper 5 is opened, and the capillary 7 is lowered to press the ball 9 on the electrode 2 of the semiconductor device 1 as shown in FIG. Next, as shown in FIG. 1C, the capillary 7 is slightly raised. Thereafter, the first clamper 5 is closed to clamp the wire 8, and as shown in FIG. 1D, the first clamper 5 and the capillary 7 are raised to cut the wire 8 from the ball 9 and the base of the wire 8. Thereby, the bumps 3 are formed on the electrodes 2. This bump forming method is the same as the first method described in the section of the prior art. Therefore, the whiskers 4 are present on the bumps 3 as shown in FIG. The above-described bump forming operation is performed on all the electrodes 2 of one semiconductor device 1.
【００１２】１つの半導体デバイス１について全てのバ
ンプ形成が完了し、図１（ｄ）の状態になると、次に、
図２に示すように、キャピラリ７の先端より延在してい
る長さＡのワイヤ８をキャピラリ７内に引っ込める動作
が行われる。図１（ｄ）の状態より、まず、図２（ａ）
に示すように、第１クランパ５が開き、第２クランパ６
が閉じる。次に図２（ｂ）に示すように、第１クランパ
５及びキャピラリ７は共に長さＢだけ下降する。この場
合、第２クランパ６は閉じているので、ワイヤ８は下降
できなく、キャピラリ７の先端より延在するワイヤ長さ
は、Ａ1 （＝Ａ−Ｂ）のように短くなる。次に図２
（ｃ）に示すように、第１クランパ５が閉じ、第２クラ
ンパ６が開く。その後図２（ｄ）に示すように、第１ク
ランパ５及びキャピラリ７は長さＢだけ上昇する。この
図２（ｄ）の状態における第１クランパ５、第２クラン
パ６及びキャピラリ７の位置関係、第１クランパ５及び
第２クランパ６の開閉状態は、図１（ｄ）と同じ状態で
ある。When the formation of all the bumps for one semiconductor device 1 is completed and the state shown in FIG.
As shown in FIG. 2, an operation of retracting the wire 8 having a length A extending from the tip of the capillary 7 into the capillary 7 is performed. From the state of FIG. 1D, first, FIG.
As shown in the figure, the first clamper 5 is opened and the second clamper 6 is opened.
Closes. Next, as shown in FIG. 2B, both the first clamper 5 and the capillary 7 descend by the length B. In this case, since the second clamper 6 is closed, the wire 8 cannot be lowered, and the length of the wire extending from the tip of the capillary 7 becomes short as A 1 (= AB). Next, FIG.
As shown in (c), the first clamper 5 closes and the second clamper 6 opens. Thereafter, as shown in FIG. 2D, the first clamper 5 and the capillary 7 rise by the length B. The positional relationship between the first clamper 5, the second clamper 6, and the capillary 7 and the open / closed state of the first clamper 5 and the second clamper 6 in the state of FIG. 2D are the same as those in FIG. 1D.
【００１３】そこで、以後、図２（ａ）乃至図２（ｄ）
の動作を繰り返して行うことにより、図２（ｅ）に示す
ように、ワイヤ８をキャピラリ７内に引っ込めることが
できる。ここで、図２（ａ）の状態より図２（ｅ）に示
すように、ワイヤ８をキャピラリ７内に引っ込める動作
をさせる回数は、キャピラリ７の先端より延在している
ワイヤ長さＡと第１クランパ５及びキャピラリ７の上下
動量Ｂとの関係により設定する。この設定は、図示しな
い演算制御回路によって行われ、自動的に図２（ｅ）の
状態に行われる。Therefore, hereinafter, FIGS. 2 (a) to 2 (d)
By repeating the above operation, the wire 8 can be retracted into the capillary 7 as shown in FIG. Here, as shown in FIG. 2 (e) from the state of FIG. 2 (a), the number of times the wire 8 is retracted into the capillary 7 depends on the wire length A extending from the tip of the capillary 7. It is set based on the relationship with the vertical movement amount B of the first clamper 5 and the capillary 7. This setting is performed by an arithmetic control circuit (not shown), and is automatically set to the state shown in FIG.
【００１４】次に図１に示す動作で形成されたバンプ３
上に、図３（ａ）に示すようにキャピラリ７を移動させ
る。この場合、キャピラリ７の中心をバンプ３の中心よ
りＣだけオフセットさせてキャピラリ７をバンプ３の上
方に位置させる。即ち、キャピラリ７の下面の平らな面
をひげ４の上方に位置させる。そして、図３（ｂ）に示
すように、キャピラリ７を下降させてバンプ３に押し付
けてヒゲ４を平らに潰す。これにより、バンプ３のひげ
４は、キャピラリ７の平らな下面で押しつぶされる。次
に図３（ｃ）に示すように、キャピラリ７を上昇させ
る。この動作を１つの半導体デバイス１の全てのバンプ
３について行う。前記したバンプ３上方へのキャピラリ
７の移動は、図示しない演算制御回路に記憶されている
バンプ形成時の座標位置を予め設定したオフセットＣだ
けずらした座標位置に、演算制御回路からの指令によっ
てキャピラリ７を移動させることによって行われる。Next, the bump 3 formed by the operation shown in FIG.
The capillary 7 is moved upward as shown in FIG. In this case, the capillary 7 is positioned above the bump 3 by offsetting the center of the capillary 7 by C from the center of the bump 3. That is, the flat surface of the lower surface of the capillary 7 is positioned above the beard 4. Then, as shown in FIG. 3B, the capillary 7 is lowered and pressed against the bump 3 to crush the beard 4 flat. Thereby, the beard 4 of the bump 3 is crushed by the flat lower surface of the capillary 7. Next, as shown in FIG. 3C, the capillary 7 is raised. This operation is performed for all the bumps 3 of one semiconductor device 1. The above-described movement of the capillary 7 above the bumps 3 is performed by moving the capillary position stored in the arithmetic control circuit (not shown) to a coordinate position obtained by shifting the coordinate position by a preset offset C by a command from the arithmetic control circuit. 7 is moved.
【００１５】全てのバンプ３のひげ４をつぶした後は、
図２に示すワイヤ８を引っ込める動作の逆の動作が自動
的に行われ、図２（ａ）に示すように、キャピラリ７の
先端から一定長さＡのワイヤ８を延在させる。そして、
次の半導体デバイス１がバンプ形成位置に送られてくる
と、以後は、図１（ａ）に示すようにボール９を形成
し、その後は図１に示すバンプ形成動作、図２に示すワ
イヤ引っ込め動作、図３に示すひげつぶし動作、図２の
逆のワイヤ引き出し動作が行われる。After crushing the beards 4 of all the bumps 3,
The operation reverse to the operation of retracting the wire 8 shown in FIG. 2 is automatically performed, and the wire 8 having a predetermined length A is extended from the tip of the capillary 7 as shown in FIG. And
When the next semiconductor device 1 is sent to the bump forming position, the ball 9 is formed as shown in FIG. 1A, and thereafter, the bump forming operation shown in FIG. 1 and the wire retracting shown in FIG. The operation, the slashing operation shown in FIG. 3, and the wire drawing operation reverse to FIG. 2 are performed.
【００１６】[0016]
【発明の効果】本発明によれば、キャピラリに挿通され
たワイヤにボールを形成し、このボールを半導体デバイ
スの電極に押し付け、その後キャピラリを上昇させてボ
ールとワイヤの付け根部分からワイヤを切断して電極上
にバンプを形成する動作を行った後、キャピラリの先端
より延在しているワイヤをキャピラリ内に引っ込める動
作を行わせ、次にキャピラリの下面の平らな面で前記ひ
げを潰すので、バンプ上面の安定化が図れる。According to the present invention, a ball is formed on a wire inserted into a capillary, the ball is pressed against an electrode of a semiconductor device, and then the capillary is raised to cut the wire from the ball and the root of the wire. after the operation of forming a bump on an electrode, a wire extending from the tip end of the capillary to perform the operation to retract into the capillary, then the flat surface of the lower surface of the capillary shed Te
As a result , the upper surface of the bump can be stabilized.
【図１】（ａ）乃至（ｄ）は、本発明になる第１工程で
あるバンプ形成方法の一実施例を示す動作説明図であ
る。FIGS. 1A to 1D are operation explanatory views showing one embodiment of a bump forming method which is a first step according to the present invention.
【図２】（ａ）乃至（ｆ）は、本発明になる第２工程で
あるワイヤ引っ込め動作の一実施例を示す動作説明図で
ある。FIGS. 2A to 2F are operation explanatory diagrams showing one embodiment of a wire retracting operation which is a second step according to the present invention.
【図３】（ａ）乃至（ｃ）は、本発明になる第３工程で
あるひげ部分のつぶし動作の一実施例を示す動作説明図
である。FIGS. 3 (a) to 3 (c) are operation explanatory diagrams showing an embodiment of a whisker crushing operation as a third step according to the present invention.
【図４】（ａ）及び（ｂ）は、従来のバンプ形成方法で
形成されたバンプの説明図である。FIGS. 4A and 4B are explanatory views of bumps formed by a conventional bump forming method.
１ 半導体デバイス ２ 電極 ３ バンプ ４ ひげ ５ 第１クランパ ６ 第２クランパ ７ キャピラリ ８ ワイヤ ９ ボール DESCRIPTION OF SYMBOLS 1 Semiconductor device 2 Electrode 3 Bump 4 Beard 5 First clamper 6 Second clamper 7 Capillary 8 Wire 9 Ball
───────────────────────────────────────────────────── フロントページの続き (72)発明者 船木 月夫 北海道亀田郡七飯町字中島145番地 日 立北海セミコンダクタ株式会社内 (72)発明者 駒宮 彰 東京都武蔵村山市伊奈平２丁目51番地の １ 株式会社新川内 (72)発明者 新井 一弘 東京都武蔵村山市伊奈平２丁目51番地の １ 株式会社新川内 (72)発明者 田嶋 知喜 東京都武蔵村山市伊奈平２丁目51番地の １ 株式会社新川内 (56)参考文献 特開 平５−136150（ＪＰ，Ａ) 特開 昭63−173345（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 21/60 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Tsukio Funaki 145 Nakajima, Nanae-cho, Kameda-gun, Hokkaido Inside Hitachi Tatekai Sea Semiconductor Co., Ltd. 1 Shinkawauchi Co., Ltd. (72) Inventor Kazuhiro Arai 2-51, Inahei, Musashimurayama-shi, Tokyo 1 Shinkawachi Co., Ltd. (72) Inventor Tomoki Tajima 2-51, Inahira, Musashimurayama-shi, Tokyo Shin-Kawauchi Co., Ltd. (56) References JP-A-5-136150 (JP, A) JP-A-63-173345 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) H01L 21 / 60
Claims (1)
を形成し、このボールを半導体デバイスの電極に押し付
け、その後キャピラリを上昇させてボールとワイヤの付
け根部分からワイヤを切断して電極上にバンプを形成す
る動作を行った後、キャピラリの先端より延在している
ワイヤをキャピラリ内に引っ込める動作を行わせ、次に
キャピラリの下面の平らな面で前記バンプのひげを潰す
ことを特徴とするバンプ形成方法。1. A ball is formed on a wire inserted into a capillary, and the ball is pressed against an electrode of a semiconductor device. Thereafter, the capillary is raised to cut the wire from the ball and the root of the wire, thereby forming a bump on the electrode. After performing the forming operation, an operation of retracting the wire extending from the tip of the capillary into the capillary is performed, and then the whiskers of the bumps are crushed by the flat surface of the lower surface of the capillary. Characteristic bump forming method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP05186998A JP3128717B2 (en) | 1993-06-30 | 1993-06-30 | Bump forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP05186998A JP3128717B2 (en) | 1993-06-30 | 1993-06-30 | Bump forming method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0786286A JPH0786286A (en) | 1995-03-31 |
| JP3128717B2 true JP3128717B2 (en) | 2001-01-29 |
Family
ID=16198420
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP05186998A Expired - Fee Related JP3128717B2 (en) | 1993-06-30 | 1993-06-30 | Bump forming method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3128717B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3400338B2 (en) | 1998-02-12 | 2003-04-28 | 株式会社新川 | Bump bonding equipment |
| JP3400337B2 (en) * | 1998-02-12 | 2003-04-28 | 株式会社新川 | Bonding equipment |
| JPH11307553A (en) | 1998-04-21 | 1999-11-05 | Shinkawa Ltd | Method and device for positioning semiconductor pellet |
| JP5115488B2 (en) * | 2009-02-04 | 2013-01-09 | 株式会社デンソー | Wire bonding method |
| CN116329830B (en) * | 2023-05-29 | 2023-08-29 | 宁波尚进自动化科技有限公司 | Welding method of chip pins |
-
1993
- 1993-06-30 JP JP05186998A patent/JP3128717B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0786286A (en) | 1995-03-31 |
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