JP3127072B2 - Single crystal thin film forming method and single crystal thin film forming apparatus - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for forming a single-crystal thin film on a substrate, that is, an arbitrary medium, and more particularly to a method for forming a single-crystal thin film selectively and efficiently. The present invention relates to a method and apparatus for forming a single-crystal thin film.

[0002]

2. Description of the Related Art A well-known epitaxial growth method can be used to form a single crystal thin film of a predetermined substance on a single crystal substrate of the same substance and having the same crystal orientation. On the other hand, in order to form a single-crystal thin film on a substrate having a different crystal structure, such as an amorphous substrate or a polycrystalline substrate, or a substrate having a different material, an amorphous thin film or a polycrystalline thin film is first formed on the substrate. A method of forming these films and then converting these thin films to single crystals is used.

Conventionally, a melt recrystallization method and a lateral solid phase epitaxy method have been used for single crystallization of a polycrystalline semiconductor thin film and an amorphous semiconductor thin film which is amorphous.

[0004]

However, these methods have the following problems. That is, in the former melt recrystallization method, when the material constituting the thin film is a high melting point material, a large thermal strain is generated on the substrate, and the physical and electrical characteristics of the thin film to be used are impaired. was there. An electron beam or a laser beam is used for melting. For this reason,
Since it is necessary to scan the spots of these beams over the entire surface of the substrate, there is a problem that much time and cost are required for recrystallization.

[0005] The latter lateral solid phase epitaxy method has problems that it is easily affected by the crystallization method of the substance constituting the substrate and that the growth rate is slow. For example, it took 10 hours or more to grow a single crystal thin film having a thickness of about 10 μm. Moreover, when the growth proceeds to some extent, lattice defects are generated and the growth of the single crystal is stopped, so that there is a problem that it is difficult to obtain large crystal grains.

Further, in any of the methods, there is a problem that it is necessary to bring a seed crystal into contact with a polycrystalline thin film or an amorphous thin film. In addition, since the direction in which the single crystal grows is along the main surface of the thin film, that is, in the lateral direction, the growth distance to the crystal becomes longer, resulting in various obstacles during the growth of the single crystal. was there. For example, when the substrate is made of an amorphous material such as glass, the position of the lattice of the substrate has no regularity. Although the grain size is large, there is a problem that it grows as a polycrystal. In addition, there is a problem that it is difficult to selectively form a single crystal thin film having a predetermined crystal orientation in an arbitrary region of the substrate due to the lateral growth.

On the other hand, in an attempt to solve the above-mentioned problems in these methods, attempts have been made to reduce the growth distance by utilizing the vertical growth of the thin film, thereby shortening the growth time. Was done. That is, a method has been attempted in which a seed crystal is brought into contact with the entire surface of a polycrystalline thin film or an amorphous thin film and solid phase epitaxial growth is performed in a direction perpendicular to the main surface of the thin film, that is, in a vertical direction. However, as a result, the seed crystal and the amorphous thin film are only partially in contact with each other, and only lateral epitaxial growth occurs from this contact portion. Could not be formed. In addition, according to this method, the seed crystal and the grown single crystal film adhere to each other, and it is very difficult to separate the seed crystal. There was a problem that it adhered to the side. Further, in order to selectively form a single crystal thin film having a predetermined crystal orientation in an arbitrary region of the substrate,
It is necessary to accurately arrange a seed crystal having a predetermined shape at a predetermined position, which is practically impossible.

In the case where the substrate itself has a single crystal structure, a single crystal thin film having a crystal orientation different from that of the substrate is formed on the substrate by any conventional technique. There was a problem that it was impossible.

The present invention has been made to solve the above-mentioned problems of the conventional method, and a single-crystal thin film having a desired crystal orientation is formed on an arbitrary substrate including a single-crystal substrate. It is an object of the present invention to provide a technique that can be formed efficiently and a technique that can be selectively formed.

[0010]

According to a first aspect of the present invention, there is provided a method for forming a single crystal thin film of a predetermined substance, comprising the steps of: (a) forming a single crystal thin film on a substrate; Forming a thin film of the predetermined material of polycrystalline,
(b) forming a mask material on the thin film, (c) selectively removing the mask material, and (d) forming the mask material at a high temperature equal to or lower than the crystallization temperature of the predetermined substance. From the direction perpendicular to the plurality of densest crystal planes having different directions in the single-crystal thin film, a low-energy gas beam that does not cause the sputtering of the predetermined substance is selectively removed from the mask material. Irradiating onto the substrate.

According to a second aspect of the present invention, there is provided a method for forming a single crystal thin film according to the first aspect.
(b) to performing the step (d) a plurality of times, and changing the irradiation direction of the beam in the step (d) from one time to another, thereby converting the thin film into a single crystal having a plurality of crystal orientations. Switch selectively.

According to a third aspect of the present invention, there is provided a method of forming a single-crystal thin film of a predetermined substance, comprising the steps of: (a) forming the amorphous or polycrystalline predetermined film on a substrate; (B) forming a mask material on the thin film, (c) selectively removing the mask material, and (d) selectively removing the mask material. A step of selectively removing the thin film while leaving a specific region on the substrate by performing an etching process on the thin film using a mask material as a shield; and (e) a high temperature lower than a crystallization temperature of the predetermined substance. A low-energy gas beam that does not cause sputtering of the predetermined substance is irradiated onto the substrate from a direction perpendicular to a plurality of densest crystal planes having different directions in the single crystal thin film to be formed. Process and
Is provided.

According to a fourth aspect of the present invention, there is provided a method for forming a single crystal thin film of a predetermined substance, comprising the steps of: (a) forming a single crystal thin film of an amorphous or polycrystalline material on a substrate; A step of forming a thin film of the substance, and (b) at a high temperature equal to or lower than the crystallization temperature of the predetermined substance, from a direction perpendicular to a plurality of closest-packed crystal planes having different directions in the single crystal thin film to be formed. A step of irradiating the substrate with a low-energy gas beam that does not cause sputtering of the predetermined substance, and (c) after the step (b), a step of forming a mask material on the thin film. (D) selectively removing the mask material; and (e) selectively removing the thin film by etching the thin film using the selectively removed mask material as a shield. And a step of performing.

According to a fifth aspect of the present invention, there is provided a method for forming a single-crystal thin film of a predetermined substance, comprising the steps of: (a) forming an amorphous or polycrystalline predetermined film on a substrate; Forming a thin film of the substance of (b), while performing the step (a), the single crystal to be formed at a low temperature at which crystallization of the predetermined substance does not occur only in the step (a). A step of irradiating the substrate with a low-energy gas beam that does not cause sputtering of the predetermined substance, from the direction perpendicular to the plurality of densest crystal planes having different directions in the thin film, and (c) the step ( forming a mask material on the thin film after (a) and (b), (d) selectively removing the mask material, and (e) removing the selectively removed mask material. By performing an etching process on the thin film as a shield, the thin film is And a step of selectively removing.

According to a sixth aspect of the present invention, there is provided a method for forming a single-crystal thin film of a predetermined substance, comprising the steps of: (a) forming an amorphous or polycrystalline predetermined film on a substrate; A step of forming a thin film of the substance, and (b) at a high temperature equal to or lower than the crystallization temperature of the predetermined substance, from a direction perpendicular to a plurality of closest-packed crystal planes having different directions in the single crystal thin film to be formed. A step of irradiating the substrate with a low-energy gas beam that does not cause sputtering of the predetermined substance, and (c) after the step (b), a step of forming a mask material on the thin film. (D) a step of selectively removing the mask material; and (e) a plurality of close-packed crystals having different directions in the single crystal thin film to be formed at a high temperature equal to or lower than the crystallization temperature of the predetermined substance. Perpendicular to the plane and the direction in the step (b) Irradiating the gas beam of low energy that does not cause the sputtering of the predetermined substance from the different direction onto the substrate using the mask material selectively removed as a shield.

According to a seventh aspect of the present invention, there is provided an apparatus for forming a single-crystal thin film of a predetermined substance on a substrate, wherein the single-crystal thin film to be formed has different directions. An irradiation unit that irradiates the substrate with a beam of a low-energy gas that does not cause the sputtering of the predetermined substance from a direction perpendicular to the plurality of close-packed crystal planes, and causes the irradiation unit to scan the substrate. Substrate moving means.

According to an eighth aspect of the present invention, there is provided the apparatus for forming a single crystal thin film according to the seventh aspect, further comprising a beam converging means for making a cross-sectional shape of the gas beam into a band shape on the substrate. Prepare.

According to a ninth aspect of the present invention, there is provided a single crystal thin film forming apparatus for forming a single crystal thin film of a predetermined substance on a substrate, comprising: a single beam source for supplying a gas beam; A reflecting plate that reflects at least a part of the beam supplied by the beam source to thereby irradiate the gas onto the substrate with a plurality of predetermined incident directions; and a tilt of the reflecting plate. Reflector driving means for changing the angle.

According to a tenth aspect of the present invention, there is provided an apparatus for forming a single crystal thin film of a predetermined substance on a substrate, comprising: a single beam source for supplying a gas beam; A plurality of reflectors, wherein each one of the plurality of reflectors reflects at least a portion of the beam provided by the beam source so that the gas is related to the tilt angle of the reflector. The apparatus further includes reflector exchange means for realizing irradiation onto the substrate with a plurality of predetermined incident directions, selecting a predetermined one from the plurality of reflectors, and providing the selected reflector for reflection of the beam. .

According to the present invention, there is provided an apparatus for forming a single-crystal thin film according to the present invention, wherein the single-crystal thin film is made of the same material as the amorphous or polycrystalline single crystal. The apparatus further includes film forming means for forming a thin film on the substrate.

According to a twelfth aspect of the present invention, there is provided a single-crystal thin-film forming apparatus for forming a single-crystal thin film of a predetermined substance on a substrate, comprising: an etching means for etching the surface of the substrate; Film forming means for forming a crystalline or polycrystalline thin film of the predetermined substance on the surface of the substrate; and a direction perpendicular to a plurality of close-packed crystal planes having different directions in the single crystal thin film to be formed. Irradiating means for irradiating the substrate with a low-energy gas beam that does not cause the sputtering of the predetermined substance, the processing chambers accommodating the substrate in these means being in communication with each other, The apparatus further includes a substrate transfer means for transferring a substrate into and out of each processing chamber.

The apparatus for forming a single crystal thin film according to claim 13 of the present invention is an apparatus for forming a single crystal thin film of a predetermined substance on a substrate having a single crystal structure, wherein the single crystal thin film to be formed is formed. Irradiating means for irradiating the substrate with a low-energy gas beam that does not cause the sputtering of the predetermined substance from a direction perpendicular to a plurality of densest crystal planes having different directions in the direction of the crystal axis of the substrate, Attitude control means for adjusting the attitude of the substrate so as to set the relationship between the direction and the incident direction to a predetermined relationship.

According to a fourteenth aspect of the present invention, there is provided a single-crystal thin film forming apparatus for forming a single-crystal thin film of a predetermined substance on a substrate, wherein the single-crystal thin film is formed by supplying a reaction gas. Film forming means for forming a crystalline thin film of the predetermined substance on the substrate, and the predetermined substance from a direction perpendicular to a plurality of close-packed crystal planes having different directions in the single crystal thin film to be formed. An irradiation unit for irradiating the substrate with a low-energy gas beam that does not cause sputtering, and a substrate rotation unit for rotating the substrate.

According to a fifteenth aspect of the present invention, there is provided a single crystal thin film forming apparatus for forming a single crystal thin film of a predetermined substance on a substrate. Film forming means for forming a crystalline thin film of the predetermined substance on the substrate, and the predetermined substance from a direction perpendicular to a plurality of close-packed crystal planes having different directions in the single crystal thin film to be formed. Irradiating means for irradiating the substrate with a low-energy gas beam that does not cause sputtering of the substrate, wherein the film forming means applies an end of a supply path for supplying the reaction gas to the substrate with respect to the substrate. And a feed system rotating means for rotating the feed system.

A single crystal thin film forming apparatus according to claim 16 of the present invention is an apparatus for forming a single crystal thin film of a predetermined substance on a substrate, wherein the directions of the single crystal thin film to be formed are different. A plurality of irradiation means for irradiating the plurality of beams of a low-energy gas that does not cause the sputtering of the predetermined substance from the direction perpendicular to the plurality of close-packed crystal planes onto the substrate, and the plurality of irradiation means; And control means for individually adjusting the operating conditions in the above.

According to a seventeenth aspect of the present invention, there is provided a single crystal thin film forming apparatus for forming a single crystal thin film of a predetermined substance on a substrate, wherein the single beam forms a beam of gas supplied by an ion source. Irradiating means for irradiating the substrate with low energy that does not cause sputtering of the predetermined substance from a direction perpendicular to a plurality of densest crystal planes having different directions in the single crystal thin film to be irradiated, the ion source, and the ion source; A biasing means for applying a bias voltage in a direction to accelerate ions between the substrate and the substrate.

An apparatus for forming a single-crystal thin film according to claim 18 of the present invention is an apparatus for forming a single-crystal thin film of a predetermined substance on a substrate, wherein a beam of gas supplied by an ion source is formed. Irradiation means for irradiating the substrate with low energy that does not cause sputtering of the predetermined substance from a direction perpendicular to a plurality of densest crystal planes having different directions in the single crystal thin film to be provided, A grid is installed near the ion outlet,
The apparatus further includes a grid voltage applying unit that applies a voltage for adjusting conditions for extracting ions from the ion source to the grid.

According to a nineteenth aspect of the present invention, in the method of any one of the first to sixth aspects, the atomic weight of the element constituting the gas is such that the predetermined substance is converted to the predetermined substance. It is lower than the largest of the atomic weights of the constituent elements.

According to a twentieth aspect of the present invention, in the method of any one of the first, second and sixth aspects, the atomic weight of the element constituting the gas is such that the mask material has It is lower than the largest of the atomic weights of the constituent elements.

According to a twenty-first aspect of the present invention, in the apparatus for forming a single-crystal thin film according to the seventh aspect, the irradiation means comprises an electron cyclotron resonance type ion source. The ion source provides a beam of the gas.

According to a twenty-second aspect of the present invention, in the single crystal thin film forming apparatus according to the ninth or tenth aspect, the beam source is an electron cyclotron resonance type ion source.

According to a twenty-third aspect of the present invention, in the single crystal thin film forming apparatus, the ion source is an electron cyclotron resonance type ion source.

In the present invention, the term “substrate” is not limited to an object serving as a mere base provided only for forming a thin film thereon, and includes, for example, a device having a predetermined function. Means a medium on which a thin film is to be formed.

In the present invention, “gas beam”
This is a concept that encompasses any one of a beam-like ion flow, an atomic flow, and a molecular flow.

[0035]

According to the method of the present invention, an amorphous or polycrystalline thin film of a predetermined material formed on a substrate is irradiated with a gas beam from a plurality of directions. . Since the energy of this beam is large enough not to cause sputtering of the irradiated substance, Bravais' law is applied. That is, the layer near the surface of the thin film to be irradiated is converted into a crystal having a crystal orientation such that the plane perpendicular to the beam irradiation direction becomes the densest crystal plane. Since a plurality of gas beams are irradiated from directions perpendicular to a plurality of densest crystal planes having different directions, the orientation of the formed crystal is uniquely determined. That is, a single crystal layer having a uniform crystal orientation is formed near the surface of the polycrystalline thin film. Moreover, a mask material is formed on the thin film to be irradiated prior to irradiation, and the mask material is selectively removed. Therefore, irradiation proceeds only in a specific region on the substrate corresponding to the selectively removed portion of the mask material, so that the single crystal layer is formed only in the vicinity of the surface of the thin film to be irradiated corresponding to the specific region. It is formed.

Further, since the temperature of the thin film is a high temperature equal to or lower than the crystallization temperature, the single crystal formed near the surface functions as a seed crystal, and the single crystal grows deeper by solid phase epitaxial growth in the vertical direction. As a result of the growth, in the specific region, the entire region in the thickness direction of the irradiated thin film is monocrystallized.
When the temperature of the thin film is equal to or higher than the crystallization temperature, the formed single crystal is converted into a polycrystalline structure in a state of thermal equilibrium. on the other hand,
At a temperature much lower than the crystallization temperature, crystallization does not proceed deeper. For this reason, the temperature of the thin film is adjusted to a high temperature equal to or lower than the crystallization temperature, for example, immediately below the crystallization temperature.

As described above, according to the method of the present invention,
It is possible to selectively form a single crystal thin film having a uniform crystal orientation in any specific region on the substrate.

<Operation of the Invention> According to the method of the present invention, the irradiation of the gas beam from the formation of the mask material is repeated while changing the irradiation direction. For this reason, it is possible to selectively form single-crystal thin films having different crystal orientations in a plurality of arbitrary specific regions on the substrate.

According to the method of the present invention, after selectively removing an amorphous or polycrystalline thin film while leaving a specific region on a substrate, a gas at a predetermined temperature is obtained. Irradiation of this beam promotes the action of Brave's law and the solid phase epitaxial growth in the vertical direction, and converts this thin film into a single crystal thin film. For this reason, it is possible to selectively form a single crystal thin film having a uniform crystal orientation in an arbitrary specific region on the substrate.

According to the method of the present invention, the amorphous or polycrystalline thin film on the substrate is irradiated with a gas beam at a predetermined temperature to obtain the Brave's law. And the solid phase epitaxial growth in the vertical direction is promoted, and this thin film is converted into a single crystal thin film. Thereafter, the single crystal thin film is selectively removed while leaving a specific region on the substrate.
For this reason, it is possible to selectively form a single crystal thin film having a uniform crystal orientation in an arbitrary specific region on the substrate.

According to the method of the present invention, a gas beam is irradiated at a predetermined temperature while forming an amorphous or polycrystalline thin film on a substrate. Is promoted, and the thin film being formed is sequentially converted into a single crystal thin film. Thereafter, the single crystal thin film is selectively removed while leaving a specific region on the substrate. For this reason,
It is possible to selectively form a single crystal thin film having a uniform crystal orientation in any specific region on the substrate.

According to the method of the present invention, the amorphous or polycrystalline thin film on the substrate is irradiated with a gas beam at a predetermined temperature to obtain the Brave's law. And the solid phase epitaxial growth in the vertical direction is promoted, and this thin film is converted into a single crystal thin film. Then, after a mask material is selectively formed on the single crystal thin film, the gas beam is irradiated again from a new direction. At this time, the mask material acts as a shield against the gas beam,
In the region where the mask material is selectively removed, the single crystal thin film is converted to a second single crystal thin film having a new crystal orientation. That is, according to the method of the present invention, it is possible to selectively form single crystal thin films having different crystal orientations on a plurality of arbitrary specific regions on the substrate.

In the apparatus according to the present invention, since the substrate can be scanned by the substrate moving means, it is possible to form a highly uniform single-crystal thin film on a long substrate. It is possible.

<Effect of the Invention of Claim 8> The apparatus of the present invention is provided with a beam converging means for making the cross section of the gas beam into a band shape on the substrate, so that the single crystal thin film can be formed by scanning the substrate. It can be formed efficiently and with higher uniformity.

<Operation of the invention according to claim 9> In the apparatus of the present invention, the gas beam to be applied to the thin film is obtained by a single beam source and the reflector disposed on the path.
It is possible to irradiate gas beams from a plurality of different predetermined directions without using a plurality of beam sources. In addition, since the reflector driving means is provided, the direction of incidence of the beam on the substrate can be changed and reset. For this reason,
A plurality of types of single crystal thin films having different crystal structures or crystal orientations can be formed by one apparatus.

<Effect of the Invention According to Claim 10> In the apparatus of the present invention, since a gas beam to be irradiated on the thin film is obtained by a single beam source and a reflector disposed in a path, a plurality of beams are provided. It is possible to irradiate a gas beam from a plurality of different predetermined directions without using a beam source.
In addition, since the reflector exchange means is provided, the direction of incidence of the beam on the substrate can be arbitrarily selected from a plurality of reflectors and reset. For this reason, it is possible to form a plurality of types of single crystal thin films having different crystal structures or crystal orientations with one apparatus.

<Operation of the invention according to claim 11> Since the apparatus of the present invention is provided with a film forming means such as a chemical vapor deposition means, it is formed by irradiating a gas beam while forming a film. The growing thin film can be sequentially converted to a single crystal thin film. Therefore, it is not necessary to promote the vertical epitaxial growth of the thin film, so that a single crystal thin film can be formed at a low temperature.

<Effect of the Invention of Claim 12> Since the apparatus of the present invention includes an etching unit, a film forming unit, and an irradiation unit each having a processing chamber communicating with each other, by using this apparatus, the apparatus can be mounted on a substrate. Before forming a thin film, an etching process for removing an oxide film can be performed, and film formation can be started while preventing new oxidation from progressing. Further, in this apparatus, since the substrate transfer means is provided, the transfer of the substrate to each processing chamber can be performed efficiently.

<Effect of the Invention of Claim 13> Since the apparatus of the present invention is provided with the attitude control means, by using this apparatus, a predetermined distance between the crystal axis of the single crystal substrate and the incident direction of the gas beam can be obtained. It is possible to set the relationship.
Therefore, it is possible to form a new single crystal thin film on the single crystal substrate epitaxially and at a temperature lower than the crystallization temperature.

<Function of the Invention According to Claim 14> In the apparatus of the present invention, since the substrate rotating means is provided, the irradiation of the beam is performed intermittently while the reaction gas is constantly supplied and the irradiation is stopped. It is possible to progress the formation of an amorphous or polycrystalline thin film while rotating the substrate. As a result, a highly uniform amorphous or polycrystalline thin film can be formed, so that a single crystal thin film obtained by converting the same can achieve high uniformity.

<Effect of the Invention of Claim 15> Since the apparatus of the present invention is provided with the supply system rotating means, the supply of the reaction gas and the irradiation of the beam are always performed without intermittently performing the irradiation of the beam. It is possible to obtain a highly uniform single crystal thin film while performing. That is, a single crystal thin film having high uniformity can be efficiently formed.

<Operation of the Invention> In the apparatus of the present invention, since the control means individually adjusts the operating conditions of the irradiation means, such as the output beam density, the plurality of beams irradiated on the substrate are controlled. Are optimally adjusted. Therefore, a high-quality single-crystal thin film can be efficiently formed.

<Function of the Invention> In the apparatus of the present invention, a bias voltage is applied between the ion source and the substrate by the bias means, so that the directivity of the gas beam is improved. Therefore, it is possible to form a high-quality single-crystal thin film with high crystal orientation uniformity.

In the apparatus according to the present invention, the conditions for extracting ions from the ion source are optimally adjusted by the grid voltage applying means, so that a high quality single crystal thin film can be efficiently formed. Is possible.

In the method according to the present invention, the atomic weight of the element constituting the gas beam irradiated onto the substrate is the largest among the atomic weights of the elements constituting the thin film to be irradiated. Therefore, most of the atoms constituting the irradiated gas are scattered backward at or near the surface of the irradiated thin film and hardly remain in the irradiated thin film. For this reason, a single crystal thin film with few impurities can be obtained.

<Operation of the invention according to claim 20> In the method of the present invention, the atomic weight of the element constituting the gas beam irradiated onto the substrate is larger than the atomic weight of the element constituting the mask material. Therefore, most of the atoms constituting the irradiated gas are scattered backward at or near the surface of the mask material, and hardly penetrate into the mask material and the thin film to be irradiated. For this reason, a single crystal thin film with few impurities can be obtained.

<Effects of the Inventions of Claims 21 to 23> In the apparatus of the present invention, since a gas beam is supplied by an electron cyclotron resonance type ion source, the directivity of the ion beam is In addition to this, a neutral beam with good directivity can be obtained at a predetermined distance or more from the ion source without using a means for neutralizing ions.

[0058]

Embodiment <A. Basic Principle of Single Crystal Thin Film Formation> Here, the basic principle of efficiently forming a single crystal thin film on a substrate will be described.

<A-1. Basic Configuration of Apparatus 101> FIG. 1 is a front sectional view showing an example of a basic configuration of an apparatus for forming a single crystal thin film. The apparatus 101 forms a single crystal thin film on a substrate 11 by converting a polycrystalline thin film formed in advance on the substrate 11 into a single crystal thin film.

In this apparatus 101, an electron cyclotron resonance (ECR) ion source 2 is
Is incorporated. The ECR ion source 2 includes a plasma container 3 that defines a plasma chamber 4 inside. A magnetic coil 5 for applying a high DC magnetic field to the plasma chamber 4 is provided around the plasma container 3. On an upper surface of the plasma container 3, a waveguide 6 for introducing a microwave into the plasma chamber 4 and an inert gas introducing tube 7 for introducing an inert gas such as Ne are provided.

The processing chamber 1 defines an irradiation chamber 8 therein. The bottom of the plasma container 3 defines, at the center thereof, an outlet 9 through which the plasma passes. The irradiation chamber 8 and the plasma chamber 4 communicate with each other via the outlet 9. Inside the irradiation chamber 8, the sample table 10 is located just below the outlet 9.
Is installed. A substrate 11 is placed on the sample stage 10, and a reflection plate 12 is installed above the substrate 11. The sample stage 10 includes a heater (not shown), and the substrate 11 is heated by the action of the heater.
Maintain an appropriate high temperature.

A vacuum exhaust pipe 14 communicates with the irradiation chamber 8. A vacuum device (not shown) is connected to one end of the vacuum exhaust pipe 14, and the gas present in the irradiation chamber 8 is exhausted through the vacuum exhaust pipe 14 so that the degree of vacuum in the irradiation chamber 8 becomes a predetermined value. Held at the height of A vacuum gauge 15 for displaying the degree of vacuum in the irradiation chamber 8 is provided in communication with the irradiation chamber 8.

<A-2. Configuration of Reflector> FIG.
It is a perspective view in an example. The reflection plate 12a is an example of a reflection plate for forming a single crystal having a diamond structure, such as single crystal Si. The reflecting plate 12a defines an opening at the center of the flat base 21. Around this opening, three rectangular blocks 22 are fixedly installed, and inside each of them, a reflecting block 23 is fixed. As a result, an equilateral triangular opening 24 bordered by these reflection blocks 23 is formed at the center of the base 21. In the reflection block 23, the slope 25 facing the opening 24 functions as a reflection surface that reflects the gas beam. Therefore, the inclination angle of the slope 25 is set to an appropriate size in accordance with the direction of the crystal axis of the single crystal to be formed.

FIG. 3 shows a block 22 and a reflection block 2.
3 (a), 3 (b), and 3 (c) are a plan view, a side view, and a front view, respectively. FIG.
As shown in (b), the inclination angle of the slope 25 is 55
Set to ゜.

<A-3. Operation of ECR Ion Source> Returning to FIG. 1, the operation of the ECR ion source 2 will be described. While introducing an inert gas such as Ne or Ar into the plasma chamber 4 from the inert gas introduction pipe 7, the plasma chamber 4 is simultaneously introduced from the waveguide 6.
The microwave is introduced to the At the same time, the magnetic coil 5
Is supplied with a DC current, a DC magnetic field is formed in and around the plasma chamber 4. The supplied gas is kept in a plasma state by the action of the microwave and the DC magnetic field. This plasma is generated by high-energy electrons that spirally move according to the principle of a cyclotron by a microwave and a DC magnetic field.

Since these electrons have diamagnetic properties,
It moves to the weaker magnetic field and forms an electron flow along the lines of magnetic force. As a result, in order to maintain electrical neutrality, positive ions also form an ion current along the magnetic field lines along with the electron current. That is, an electron flow and an ion flow are formed from the outlet 9 to the irradiation chamber 8 in a downward direction. Since the ion flow flows in parallel with the electron flow, after the deionization time has elapsed,
Recombination with each other results in a neutral atomic flow. Therefore, at a position separated from the outlet 9 by a predetermined distance or more, almost only a neutral atomic flow is formed.

As described above, although the ECR ion source 2 is an apparatus for generating ions, it forms an ion stream in parallel with an electron stream, so that there is no need to use another means for neutralizing the ion stream. There is an advantage that a high-density neutral atomic flow can be easily obtained. In addition, since the ion current is formed in parallel with the electron current, the ion current is not diverged so much, and an ion current similar to a parallel current having a uniform traveling direction can be obtained. In addition, since the parallel ion current is converted into a neutral atomic current, the atomic current also becomes close to a parallel current having a uniform traveling direction. Therefore, there is an advantage that other means such as a collimator for correcting directivity is not required.

<A-4. Basic Operation of Apparatus 101> The basic operation of the apparatus 101 will be described with reference to FIG. The reflector 1 shown in FIGS. 2 and 3 as the reflector 12
An example in which a polycrystalline SiO ₂ (quartz) substrate is used as the substrate 11 and a single-crystal Si thin film is formed on the quartz substrate 11 will be described. CVD on the quartz substrate 11
(Chemical vapor deposition method) or other known methods,
An i thin film is formed in advance.

First, the sample is placed on the sample stage 10 and the reflector 12a.
Attach it between (12). The heater of the sample stage 10 holds the sample, that is, the quartz substrate 11 and the polycrystalline Si thin film at a temperature of 550 ° C. Since this temperature is lower than the crystallization temperature of silicon, under this temperature, single-crystal Si does not migrate to polycrystalline Si. At the same time, this temperature is so high that, if a seed crystal is present, polycrystalline Si can grow into single-crystal Si using the seed crystal as a nucleus.

As the inert gas introduced from the inert gas introduction pipe 7, a Ne gas having an atomic weight smaller than that of Si atoms is preferably selected. By the operation of the ECR ion source 2, a Ne ⁺ ion current and an electron current are formed downward from the outlet 9. The distance from the outlet 9 to the reflector 12a (12) is preferably such that the Ne ⁺ ion current is almost neutral N
It is set large enough to be converted to e-atom flow. The reflecting plate 12a (12) is installed at a position where the downward flow of the Ne atom flows.

A part of the downward flow of the Ne atoms is reflected by the three slopes 25 formed on the reflection plate 12 a and further passes through the opening 24 to the polycrystalline Si thin film on the SiO ₂ substrate 11. Irradiated. The other part of the Ne atom flow is directly irradiated to the polycrystalline Si thin film through the opening 24 without entering the slope 25. That is, the polycrystalline S
The i-thin film is irradiated with a four-component Ne atom stream consisting of a component that has traveled straight from the outlet 9 and three components that have been reflected by the three slopes 25. The slope angle of the slope 25 is 55
照射, the irradiation directions of these four component Ne atom flows correspond to the four independent densest crystal planes of the Si single crystal to be formed, that is, the four directions perpendicular to the (111) plane. I do.

Incidentally, the energy of the plasma formed by the ECR ion source 2 is such that the energy of Ne atoms reaching the SiO ₂ substrate 11 is lower than the threshold energy (= 27 eV) in sputtering of Si by irradiation of Ne atoms. Is set to
Therefore, Brave's law acts on the polycrystalline Si thin film.
That is, the Si atoms in the vicinity of the surface of the polycrystalline Si thin film are rearranged such that the plane perpendicular to the incident direction of the Ne atom flow applied to the polycrystalline Si thin film becomes the densest crystal plane. The irradiated Ne atom stream has four components, and the incident direction of each component corresponds to the direction perpendicular to the four independent dense surfaces of the single-crystal Si. Is performed such that the planes perpendicular to these incident directions are all the densest planes. That is, the four independent (111) plane rearrangement directions are regulated in a certain direction by four Ne atom beams having mutually independent incident directions,
As a result, the crystal orientation is uniquely determined. For this reason, the layer near the surface of the polycrystalline Si thin film is converted into a single crystal Si layer having a uniform crystal orientation.

The temperature of the polycrystalline Si thin film is set to 5 as described above.
The temperature is adjusted to 50 ° C., that is, a temperature within a range suitable for growing the seed crystal. For this reason, the single crystal Si layer formed on the surface of the polycrystalline Si thin film functions as a seed crystal, and the single crystal Si layer grows toward the deep part of the polycrystalline Si thin film.
Then, the entire region of the polycrystalline Si thin film is converted to a single crystal Si layer. Thus, a single-crystal Si layer having a uniform crystal orientation is formed on the quartz substrate 11.

The single-crystal Si layer formed on the surface of the polycrystalline Si thin film by irradiation and functioning as a seed crystal is made of polycrystalline S
Since it is formed by converting from the i-thin film, it is integrated with the polycrystalline Si layer remaining on the deep side. That is, the contact between the polycrystalline Si layer and the seed crystal is perfect. Therefore, the solid-phase epitaxial growth in the vertical direction proceeds favorably. In addition, since the seed crystal and the single crystal Si formed by solid phase epitaxial growth are both single crystals of the same material having the same crystal orientation, there is no need to remove the seed crystal after forming the single crystal Si thin film. . Further, since the single-crystal Si thin film is formed by the solid-phase epitaxial growth in the vertical direction, the desired single-crystal Si film can be efficiently formed in a short time as compared with the conventional technique of growing in the horizontal direction.
A thin film can be obtained.

<A-5. Preferred Conditions> As described above, it is desirable to select Ne, which is lighter than Si atoms, as an element constituting an atomic beam for irradiating a polycrystalline Si thin film. This is because, when Ne atoms are irradiated on the Si thin film, there is a high probability that relatively heavy Si atoms scatter relatively light Ne atoms backward, so that Ne atoms penetrate into the Si thin film and remain. This is because it is hard to happen. When the thin film to be irradiated is not composed of a simple substance such as Si but composed of a compound such as GaAs, it is preferable to irradiate the atoms with lighter atoms than the element having the largest atomic weight. Instead of irradiating a monoatomic beam, a compound beam such as N ₂
Irradiation may be performed. At this time, it is desirable that the element (for example, N atom) constituting the compound is lighter than the element having the largest atomic weight constituting the irradiated thin film.

It is desirable to select an inert element such as Ne as an element constituting the irradiated atomic beam.
Because, even if the inert element remains in the Si thin film,
Since it does not form a compound with any of the elements constituting the thin film such as Si, it does not significantly affect the electronic properties of the Si thin film, and can be easily heated by raising the temperature of the formed single-crystal Si thin film to some extent. Because it can be removed to the outside.

The reflecting plate 12 is preferably made of a metal. This is because N slightly mixed in the neutral Ne atom flow
This is because when the e ⁺ ion current is reflected by the conductive reflector 12, the Ne ⁺ ions are converted into neutral atoms, and the substrate 11 is irradiated with the converted neutral Ne atom flow. Unlike the ion stream, the neutral atom stream is less likely to diverge in the traveling direction, and therefore has an advantage that the neutral atom stream is incident on the substrate 11 as a stream of uniform direction.

<A-6. Basic Configuration and Basic Operation of Apparatus 100>
FIG. 4 is a front sectional view showing a basic configuration of another apparatus for forming a single crystal thin film on a substrate. This device 100
In this method, a growing polycrystalline thin film is sequentially converted into a single crystal thin film by simultaneously irradiating a beam while forming a polycrystalline thin film on the substrate 11. Apparatus 100
In FIG. 7, a reaction gas supply pipe 13 communicates with the irradiation chamber 8.
A reaction gas for forming a thin film of a predetermined substance on the substrate 11 by plasma CVD is supplied through the reaction gas supply pipe 13. In the example of FIG. 4, three reaction gas supply pipes 13a, 13b, and 13c are provided.

The device 100 operates as follows. An example in which the reflecting plate 12a shown in FIGS. 2 and 3 is used as the reflecting plate 12, polycrystalline SiO ₂ (quartz) is used as the substrate 11, and a single-crystal Si thin film is formed on the quartz substrate 11 will be described. Reaction gas supply pipes 13a, 13b, and 1
3c, a SiH ₄ (silane) gas for supplying Si which is a main material of single crystal Si, a B ₂ H ₃ (diborane) gas for doping a p-type impurity, and a SiH ₄ (diborane) gas for doping an n-type impurity. PH ₃ (phosphine) gas is supplied. Further, the plasma chamber 4 is connected through the inert gas introduction pipe 7.
, A Ne gas is introduced.

The silane gas supplied from the reaction gas supply pipe 13 is supplied to the SiO ₂ substrate 11 by the Ne ⁺ ion stream or the Ne atom stream generated by the ECR ion source 2.
Slammed towards. As a result, the SiO ₂ substrate 1
The plasma CVD reaction proceeds on the upper surface of the substrate 1 and a thin film containing Si as a constituent element supplied by a silane gas, that is, S
An i thin film grows. In addition, by supplying diborane gas or phosphine gas while adjusting the flow rate thereof appropriately, the plasma CVD reaction using these gases simultaneously proceeds, and a Si thin film containing B (boron) or P (phosphorus) at a desired concentration. Is formed.

The SiO ₂ substrate 11 is not heated. For this reason, the SiO ₂ substrate 11 is maintained at a substantially normal temperature. Therefore, the Si thin film grows at approximately normal temperature. That is,
A plasma CVD forms a Si thin film at a temperature lower than the temperature at which crystallization proceeds. For this reason, the Si thin film is first formed by an amorphous S
i.

The downward flow of the Ne atom is generated by the device 101.
As in the case of (1), S is separated into four components by the action of the reflection plate 12a and is being formed on the upper surface of the SiO ₂
Light is incident on the i thin film. The incident directions of these four component Ne atom flows correspond to four independent densest crystal planes of the Si single crystal to be formed, that is, four directions perpendicular to the (111) plane.
The energy of the plasma formed by the ECR ion source 2 is such that the incident energy of these four components is S
Threshold energy for i (= 27 eV)
It is set to be lower than Therefore, Brave's law acts on the growing amorphous Si thin film. That is, the Si atoms in the amorphous Si are rearranged such that the plane perpendicular to the incident direction of the four-component Ne atom stream irradiated on the amorphous Si becomes the densest crystal plane. As a result, single-crystal Si having a single crystal orientation is formed. That is, the amorphous Si thin film growing by plasma CVD is sequentially converted to a single crystal Si thin film having a uniform crystal orientation.

By supplying a diborane gas or a phosphine gas simultaneously with the silane gas from the reaction gas supply pipe 13, a p-type or n-type single-crystal Si thin film to which B or P is added is formed. Further, by alternately supplying these reaction gases containing the impurity element, for example, an equiaxial n-type single-crystal Si layer can be formed on a p-type single-crystal Si layer.

As described above, the SiO ₂ substrate 11 is not heated, and a Si thin film is formed by plasma CVD at a temperature lower than the temperature at which crystallization proceeds. This is because, under a high temperature at which crystallization of Si proceeds only by plasma CVD even without irradiation of the Ne atom flow, the crystal orientation becomes an arbitrary direction independent of the irradiation direction of the Ne atom flow, and the orientation is regulated. This is because polycrystals are formed.

In the apparatus 100, S
During the process of growing the i-thin film, the conversion to a single crystal proceeds at the same time. Therefore, a single-crystal Si thin film having a large thickness is
Moreover, it can be formed at a low temperature. Since a single crystal thin film can be formed at a low temperature, for example, a new single crystal thin film can be formed on a substrate on which a predetermined element has already been formed without changing the characteristics of the element. . Thus, in this apparatus 100, it is possible to form a single-crystal thin film on a device having a predetermined structure and function as a substrate, as well as a substrate having only a function as a mere support material for a thin film. It is.

<A-7. Example of Other Single Crystal Thin Film Formation> It is also possible to form a single crystal thin film having a crystal structure other than the diamond structure.
It is advisable to prepare a reflector having a configuration suitable for each crystal structure other than a and 12b. Further, single crystal thin films having various crystal orientations can be formed even if the crystal structures are the same. For this purpose, it is preferable to prepare a reflector suitable for each crystal orientation.

In the devices 100 and 101, not only the Si single crystal thin film as in the above-described example but also GaAs
It is possible to form various types of single crystal thin films on a substrate, such as a compound single crystal thin film such as s and GaN, and an insulator single crystal thin film such as SiO ₂ . For example, when the single crystal thin film to be formed is a GaN single crystal thin film, first, a polycrystalline GaN film is grown on, for example, a Si substrate by a normal CVD method, and then N atoms are removed by using the apparatus 101. Including N
₂ (Nitrogen) gas or NH ₃ (ammonia) gas may be introduced into the inert gas introduction pipe 7 and the GaN thin film may be irradiated with a gas beam such as a molecular stream or a dissociated N atom stream. Even if the irradiated N atoms remain inside GaN, they are incorporated into the single crystal as a constituent element of GaN, so that there is no possibility that the characteristics of GaN are adversely affected.

When forming a GaAs single crystal thin film, first, a GaAs polycrystalline thin film is grown on a Si substrate or the like by a normal molecular beam epitaxy method.
1, the substrate temperature is kept at 500 ° C., an inexpensive Ar gas is used as the irradiation gas, a Ta plate is used as the reflection plate, and the other conditions are the same as those for forming the Si single crystal thin film. Good. With this method, a GaAs single crystal thin film can be obtained. Of course, these GaN, G
In order to generate an aAs single crystal thin film, the apparatus 100 may be used instead of the apparatus 101 to simultaneously form a polycrystalline thin film and convert it to a single crystal by irradiation with a gas beam.

<B. Example Regarding Selective Formation and Efficient Formation of Single Crystal Thin Film> Hereinafter, based on the above-described method, selective formation of a single crystal thin film in a specific region on a substrate and more efficient formation on a substrate Embodiments relating to a method and an apparatus capable of forming a simple single crystal thin film will be described.

<B-1. First Embodiment> FIGS. 5 to 10 are process charts relating to the method of the first embodiment. First, as shown in FIG. 5, an oxidation process is performed on the upper surface of the Si single crystal substrate 102 to form an SiO ₂ film 104 as an insulator. Further, an amorphous or polycrystalline Si thin film 106 is formed on the SiO ₂ film 104 by using, for example, CVD.

Next, as shown in FIG.
6, a thin film of SiO ₂ or Si ₃ N ₄ is formed on the upper surface, and this thin film is selectively subjected to etching.
An opening is formed in a desired specific region. This thin film 108 having an opening functions as a mask material in a subsequent step. Selective etching uses existing photoengraving technology,
That is, the resist coating, the pre-baking, the exposure, the development, and the post-baking are sequentially performed. At this time, the exposure is performed via a mask material having a predetermined pattern that enables selective etching, and after the exposure, the resist material is stripped. The portion of the Si thin film 106 exposed at the opening is cleaned by a method such as so-called reverse sputtering.

Then, as shown in FIG. 7, by using the apparatus 101, the Ne atomic flow 110 is irradiated with an appropriate irradiation energy from a direction perpendicular to the plurality of densest surfaces of the single crystal thin film to be formed. Irradiation is performed on the entire upper surface of the substrate 102. The Ne atoms are exposed to the irradiated Si thin film 106.
Is lighter than Si having the largest atomic weight among the component elements of the mask material 108 to be irradiated, so that the mask material 108
In addition, there is an advantage that it is hardly left on the Si thin film 106.

The Si thin film 106 is selectively irradiated with the Ne atom flow only in the opening of the mask material 108.
Therefore, as shown in FIG. 8, the Si thin film 106 is selectively converted into a single crystal layer 112 having a uniform crystal orientation in a region corresponding to the opening of the mask material 108, that is, in the above-described specific region.

Subsequently, as shown in FIG.
After removing 08, an oxide film 114 is formed by performing thermal oxidation on the upper surface. In general, the reaction rate of the thermal oxidation reaction is higher in amorphous or polycrystalline than in single crystal.
About 5 times larger. Therefore, the oxide film 114 is formed to be 2 to 5 times thicker on the Si thin film 106 than on the single crystal layer 112.

Thereafter, as shown in FIG.
By appropriately etching the entire upper surface of 4, the upper surface of single crystal layer 112 is exposed. At this time, the Si thin film 1
On oxide film 06, oxide film 116 remains. Single crystal layer 1
For example, a desired element such as a transistor element can be formed on the substrate 12. At this time, the oxide film 116 functions as a so-called LOCOS (Local Oxidation of Silicon) for separating an element formed in the single crystal layer 112 from another element. The desired element is already formed in the Si single crystal substrate 102 itself. Therefore, by incorporating a new element into the single crystal layer 112, 3
It is possible to realize a device having a three-dimensional structure. Further, in the method of this embodiment, since the LOCOS is formed on the amorphous layer or the polycrystalline layer, the LOCOS can be efficiently formed in a short time, and the throughput in the thermal oxidation apparatus is improved. There is.

Further, according to the method of this embodiment, since a single crystal thin film can be formed on the SiO ₂ film 104 as an insulator, it is formed on the Si single crystal substrate 102 in a device having a three-dimensional structure. There is an advantage that element isolation between the existing element and a new element formed thereon can be easily performed.

<B-2. Second Embodiment> FIGS.
FIG. 9 is a process chart relating to the method of the second embodiment. As shown in FIG. 11, transistors are formed in advance on a single crystal Si substrate. That is, the p-type single crystal Si substrate 2
02 on the upper surface of the n-type source layer 204
And the drain layer 206 is selectively formed. In addition, on the upper surface of the substrate 202, a gate electrode 210 is formed in a region corresponding to between these layers via a gate oxide film 208. That is, this transistor is an n-channel MOS transistor. Gate oxide film 208
Is made of SiO ₂ , and the gate electrode 210 is made of polycrystalline Si.
It is composed of

Next, as shown in FIG.
And SiO 2 over the entire upper surface of the gate electrode 210.
₂ is formed. Then, FIG.
As shown in FIG. 3, an amorphous or polycrystalline Si film 214 is formed on the entire surface of the insulating film 212.

Subsequently, the Si film 214 is selectively etched to leave the Si film 214 only in a desired specific region and to remove the others. FIG. 14 shows a Si film 216 formed in a specific region by selective etching.

Subsequently, as shown in FIG.
1, the Ne atomic flow 218 is applied to the insulating film 212 and the Si film 21 with appropriate irradiation energy from a direction perpendicular to a plurality of densest surfaces of the single crystal thin film to be formed.
Irradiation is performed on the entire upper surface of 6. Ne atoms are contained in the Si film 216.
In addition, since it is lighter than Si constituting the insulating film 212, there is an advantage that it is hardly left in these layers with irradiation. By this irradiation, as shown in FIG.
The Si film 216 is a single crystal Si thin film 220 having a uniform crystal orientation.
Is converted to At this time, the region exposed on the upper surface of the insulating film 212 is also converted into a single crystal thin film.

Next, as shown in FIG.
By doping the thin film 220 with an n-type impurity, the single crystal Si thin film 220 is changed to an n-type Si thin film. Thereafter, a gate oxide film 228 and a gate electrode 230 are selectively formed on the upper surface of the n-type single-crystal Si thin film 220.
Further, the drain layer 224 and the source layer 226 are formed by selectively doping the upper surface of the single crystal Si thin film 220 with a p-type impurity using these as a mask. That is, these layers are formed by self-Alliance (self-alignment). By this step, the single-crystal Si thin film 220 forms a p-channel MOS transistor.

Thereafter, an insulating film 232 of SiO ₂ or the like is formed over the entire upper surface. Then, the insulating film 2
A desired portion of the insulating film 32 and the insulating film 212 is selectively etched to form an opening functioning as a contact hole. Furthermore, after a conductive wiring layer 234 made of, for example, aluminum is applied over the entire upper surface of the insulating film 232 including the contact hole, the wiring layer 234 is selectively removed, so that a desired space between the elements can be obtained. Connection is made (FIG. 18).

As described above, according to the method of this embodiment, a single crystal layer can be selectively formed in a desired specific region on the substrate 202. Further, since a device is already formed in the substrate 202 itself, a device having a three-dimensional structure is realized by forming a new device in this single crystal layer. In the method of this embodiment, Si
Since a single-crystal thin film can be formed on the insulating film 212 made of O ₂ , a device formed on the substrate 202 and a new device formed thereon on a three-dimensional structure device Can be easily performed.

As shown in FIG. 19, a plurality of new elements can be formed on the substrate 202. At this time, two new elements (two p-channel MOS transistors in FIG. 19) are formed in the single-crystal Si thin film 220 formed separately from each other. Therefore, element isolation between these elements can be easily realized without providing a LOCOS, an isolation layer, and the like. As a result, there are advantages that the device manufacturing process is simple and the degree of integration of the elements is high.

In the above embodiment, the n-type impurity is introduced into the selectively formed single crystal Si thin film 220.
It may be introduced at the stage of the Si film 216,
14 may be introduced over the entire surface. By any of these methods, it is possible to finally configure a device having a three-dimensional structure shown in FIG. 18 or FIG.

<B-3. Third Embodiment> As described above, in the second embodiment, after the Si film 214 (FIG. 13) is selectively removed to form the Si film 216 (FIG. 14), irradiation with a Ne atom flow is performed ( (FIG. 15) Converted to a single crystal Si thin film 220 (FIG. 16). Instead, first, the entire upper surface of the Si film 214 shown in FIG. 13 is irradiated with a Ne atom stream to be converted into a single crystal thin film, and then the Si film 214 is selectively removed, thereby obtaining the structure shown in FIG. A single crystal Si thin film 220 as shown may be formed. Subsequent steps are the same as in the second embodiment.

<B-4. Fourth Embodiment> As described above, in the third embodiment, amorphous or polycrystalline Si
After forming the film 214 (FIG. 13), the Si film 214 was converted into a single crystal thin film by irradiating with a Ne atom stream. Alternatively, after completing the process shown in FIG.
0, a single crystal Si thin film is formed on the insulating film 212 by simultaneously irradiating a Ne atom flow while growing an amorphous Si thin film on the insulating film 212. good. Thereafter, the single-crystal Si thin film 2 shown in FIG.
20 is formed. Subsequent steps are the same as in the second and third embodiments.

<B-5. Fifth Embodiment> FIGS.
It is a flowchart regarding the method of 5th Example. As shown in FIG. 20, a CV is placed on a substrate 502 made of SiO _2.
First, an amorphous or polycrystalline Si thin film is formed by D or the like. Thereafter, the Si thin film is irradiated with a Ne atom flow by using the apparatus 100 to convert the Si thin film into a single-crystal Si thin film 504 having a uniform crystal surrounding so that the (100) plane is exposed on the upper surface. Note that, instead of using the apparatus 100, the apparatus 101 may be used to grow the amorphous Si thin film on the substrate 502 and simultaneously irradiate a Ne atom flow to form the single crystal Si thin film 504.

Next, as shown in FIG.
The LOCOS layer 506 is formed by selectively thermally oxidizing the upper surface of the thin film 504. Thereafter, as shown in FIG. 22, p-type or n-type impurities are introduced into each of single-crystal Si thin film regions 508, 510, and 512 separated from each other by LOCOS layer 506, thereby Thin film regions 508, 510, 51
2 is converted to a p-type or n-type semiconductor region.

Next, as shown in FIG.
Gate oxide films 514 and 515 of SiO ₂ and gate electrodes 516 and 517 of polycrystalline Si are selectively formed on the upper surfaces of the thin film regions 512 and 510, respectively. Then, FIG.
As shown in FIG. 4, these gate oxide films 514, 515
Using gate electrodes 516 and 517 as masks, n-type and p-type impurities are selectively introduced from upper surfaces into single-crystal Si thin film regions 512 and 510, respectively. as a result,
Source and drain layers are formed in the single-crystal Si thin film regions 512 and 510.

Next, as shown in FIG.
Except for the upper surface of the thin film region 508, SiO _{2 is}
Of the insulating film 526 is formed. Then, as shown in FIG. 26, irradiation of a Ne atom flow is performed from above using the apparatus 101. At this time, only the single crystal Si thin film region 508 that is not covered with the SiO ₂ insulating film 526 is selectively irradiated. The irradiation direction is a plurality of close-packed surfaces (111) of single crystal Si oriented such that one (111) surface is exposed on the upper surface.
Are set in multiple directions perpendicular to. Therefore, the single crystal S
The i-thin film region 508 is converted into a single-crystal Si layer 530 having a uniform crystal orientation such that the (111) plane is exposed on the upper surface. That is, the crystal orientation of the single crystal Si thin film region 508 is changed. A region 528 that has not been irradiated by being masked by the SiO ₂ insulating film 526 is a CMOS.
This is a region where an element is to be formed. On the other hand, for example, a pressure sensor is formed on the single crystal Si layer 530 whose crystal orientation has been changed. Next, as shown in FIG. 27, an insulating film 532 of SiO ₂ is formed on the entire upper surface. The insulating film 532 includes an insulating film 526. After that, the insulating film 53
An opening functioning as a contact hole is formed by selectively etching a desired portion in 2. Further, the insulating film 53 including the contact hole is formed.
After applying a conductive wiring layer 534 made of, for example, aluminum over the entire upper surface of the
4 is selectively removed to provide a desired connection between the elements (FIG. 28).

Through the above steps, a plurality of CMOSs 528 and a pressure sensor 536 using single crystal Si having different crystal orientations as base materials are formed in parallel in one single crystal Si thin film 504. It is desirable in terms of characteristics that the single crystal Si forming the CMOS 528 be oriented so that the (100) plane is along the main surface of the substrate, while the single crystal Si forming the pressure sensor has the (111) plane having the main surface of the substrate. It is desirable from the viewpoint of characteristics. According to the method of this embodiment, a plurality of elements having different preferred crystal orientations are the same single crystal S
It is possible to form composite devices built into i-thin films. Further, according to the method of this embodiment, it is possible to form an element using single crystal Si as a base material on a substrate 502 of non-single crystal SiO ₂ . That is, there is an advantage that the material of the substrate is not selected.

<B-6. Sixth Embodiment> As described above, in the fifth embodiment, after forming an amorphous or polycrystalline Si thin film on a substrate 502 by CVD or the like, this Si
By irradiating the entire surface of the thin film with a Ne atom stream, all regions of the Si thin film were converted into a single-crystal Si thin film 504 oriented so that the (100) plane was exposed on the upper surface (FIG. 20). Instead, as shown in FIG.
By forming a mask material 540 having a predetermined mask pattern on the upper surface and then irradiating it with a Ne atom flow,
The Ne atom flow may be selectively applied only to a region in the i thin film where a CMOS is to be formed. With this, CMO
Only the region where S is to be formed is converted into a single-crystal Si thin film 542 having the (100) plane as the upper surface, and the remaining region 544 remains as the original amorphous or polycrystalline Si thin film.
Subsequent steps are the same as in the fifth embodiment.

The method of the sixth embodiment also has the same effects as the fifth embodiment. That is, it is possible to form a composite device in which a plurality of elements having preferable different crystal orientations are formed in the same single-crystal Si thin film. Further, similarly to the fifth embodiment, there is an advantage that the material of the substrate is not selected.

<B-7. Seventh Embodiment> FIG. 30 is a front view showing a structure of a sample stage in a single crystal thin film forming apparatus according to a seventh embodiment. This sample stage is used in place of the sample stage 10 in the apparatus 100. In this sample stage, the reflecting plate 12 is fixedly supported by a fixed stage 702 via a column 712. In addition, the movable table 70
6 are slidably supported horizontally. This movable table 70
The pedestal portion of the screw 6 is a screw 7 driven to rotate by a motor 710.
08, and moves horizontally with the rotation of the screw 708. The pedestal portion is provided with a horizontal drive mechanism (not shown) using a motor and screws similar to the fixed base 702, and drives the upper member of the movable base horizontally. The sliding direction of the pedestal and the sliding direction of the upper member are orthogonal to each other. The substrate 11 to be irradiated is placed on the upper member. This substrate 11 is located below the reflection plate 12.

FIG. 31 is a plan view schematically showing the operation of the sample stage. The substrate 11 scans relative to the reflection plate 12 along two orthogonal directions by the operation of the two horizontal driving mechanisms. For this reason, it is possible to irradiate the beam uniformly over the entire surface of the substrate 11 having a large area as compared with the opening of the reflection plate 12 which functions as a passage of the irradiation beam.

When using this sample stage, a single crystal thin film forming apparatus 10 having a magnetic lens 720 as shown in FIG.
By using 1a, it is possible to efficiently perform beam irradiation. The magnetic lens 720 functions to converge the flow of ions ejected downward from the ion source 2 in a band shape. FIG. 33 is a schematic diagram showing a state in which the ion flow is focused by the magnetic lens 720. Due to the action of the magnetic lens 720, the cross-sectional shape of the ion flow is
In the vicinity of 2b, it has a band shape. Therefore, the reflection plate 12
b also has a shape along this band. As in the devices 100 and 101, the ion current changes to a nearly neutral atomic current near the reflector 12b. The substrate 11 has a component 726 of the atomic stream reflected from the reflector 12b and a component 7
24 are irradiated. The inclination angle of the reflection plate 12b is adjusted such that the incident directions of these two components are respectively perpendicular to the plurality of densest surfaces of the single crystal thin film to be formed.

By scanning the substrate 11 in a direction 728 orthogonal to the “band of atomic flow”, the substrate 11 can be scanned in one scan.
It is possible to efficiently irradiate an upper wide area. Therefore, it is possible to irradiate the substrate 11 having a large area with a small number of scans. That is, by using this apparatus 101a, a single crystal thin film can be formed with higher efficiency. This is particularly effective when the width of the substrate 11 is shorter than the major axis width of the “band of atomic flow”. At this time, scanning of the substrate 11 only needs to be performed in one direction 728, so that a single crystal thin film can be formed more efficiently. Further, only one drive mechanism incorporated in the fixed table 702 is sufficient for the drive mechanism provided on the sample table, so that the structure of the sample table is simple.

<B-8. Eighth Embodiment> FIG. 34 is a front view schematically showing a structure of a reflector support in an apparatus for forming a single crystal thin film according to an eighth embodiment. The reflector support 802 supports one end of the reflector 802 rotatably by a hinge 804, and rotatably supports the other end by a hinge 806 provided at the tip of a connecting rod 808. Connecting rod 80
8 is axially driven by a piston 810. As the connecting rod 808 moves in the axial direction, the reflection plate 8
02 pivots about hinge 804. As a result, the inclination angle θ of the reflection surface of the reflection plate 802 changes. That is, in this apparatus, the inclination angle of the reflection surface of the reflection plate 802 is variable. Therefore, by using one device,
It is possible to form single crystal thin films having various crystal orientations and crystal structures. That is, there is an advantage that formation of various types of single crystal thin films can be economically performed.

Further, there is an advantage that various types of single crystal thin films can be efficiently formed on one substrate 11. This is because it is possible to form various types of single crystal thin films while the substrate 11 is inserted in the device. The operation of the piston 810 can be instantaneously set to a predetermined inclination angle by being controlled by a computer.

<B-9. Ninth Embodiment> FIG. 35 is a plan view schematically showing the structure of a reflector support 902 in a single crystal thin film forming apparatus according to a ninth embodiment. This reflector support 9
02 is a plurality of arms 904 that are driven to rotate about a vertical axis.
It has. Each one of the reflectors 906a to 906f different from each other is attached to the tip of each one of the arms 904. The plurality of reflectors 906 a to 906 f are configured such that the number of components of the atomic flow incident on the substrate 11 or the incident angles are different from each other. That is, they differ from each other in the number of reflection surfaces and the inclination angle. Since the arm 904 is driven to rotate, a desired reflector to be set in the irradiation area 908 to be irradiated with the atomic current can be changed to a plurality of types of reflectors 906a to 906a by using the reflector support 902.
906f can be arbitrarily selected.

Therefore, similar to the apparatus of the eighth embodiment, it is possible to form single-crystal thin films having various crystal orientations and crystal structures with only one apparatus. That is, there is an advantage that formation of various types of single crystal thin films can be economically performed. Further, various types of single crystal thin films can be efficiently formed on one substrate 11.

<B-10. Tenth embodiment> Seventh embodiment to ninth embodiment
The reflection plate and the reflection plate support in the embodiment are the same as those of the device 10.
Instead of “0”, it is also possible to incorporate and use the device 101. That is, these reflectors and reflector supports are used both in an apparatus that converts an amorphous or polycrystalline thin film into a single crystal after the formation of the thin film, and in an apparatus that simultaneously performs these operations. It is possible.

<B-11. Eleventh Preferred Embodiment> FIG.
It is a top view which shows typically the structure of the single crystal thin film forming apparatus of an Example. In this apparatus, an etching unit 1104 for performing an etching process on the substrate 11, a film forming unit 1106 for forming an amorphous or polycrystalline thin film on the substrate 11, and irradiation of an atomic stream on the substrate 11 are performed. Irradiation unit 11
08 is arranged around the transfer chamber 1102. In addition, the processing chamber for accommodating the substrate 11 in each of the device sections 1104, 1106, and 1108 is provided in the transfer chamber 1102.
Through each other. The transfer chamber 1102 is provided with a carry-in port 1110 for carrying the substrate 11 in and a carry-out port 1112 for carrying out the substrate 11. These loading ports 1
Each of the door 110 and the carry-out port 1112 is provided with an airtight and openable / closable door (not shown). Transfer room 1
A transfer robot 1114 that loads and unloads the substrate 11 from the processing chambers, and automatically inserts the substrates 11 into and out of the processing chambers, is installed at 112.

In the apparatus of this embodiment, since the processing chambers communicate with each other, after performing an etching process for removing an oxide film before forming a thin film on the substrate 11, new progress of oxidation is prevented. In addition, it is possible to immediately start forming a thin film. Therefore, a thin film having good and uniform characteristics can be surely formed, and each process can be executed efficiently. The transfer robot 11
Since the substrate 14 is provided, the substrate 11 can be efficiently transported to each processing chamber.

<B-12. Twelfth Embodiment> FIG.
It is a front sectional view showing typically the structure of the single crystal thin film forming device of an example. This apparatus includes two ECR ion sources 1204a and 1204b instead of including the reflector 12. That is, these ECR ion sources 1204
The atomic flows supplied by a and 1204b are directly incident on the upper surface of the substrate 11. The ECR ion sources 1204a and 1204b are installed so as to have a predetermined angle with respect to the main surface of the substrate 11. As a result, the atomic flow is incident on the upper surface of the substrate 11 with an incident direction perpendicular to the plurality of densest surfaces of the single crystal thin film to be formed. A single crystal thin film can be formed on the substrate 11 by using an apparatus having a plurality of beam sources instead of the apparatus 100 having the reflector 12.

In this apparatus, a mechanism for adjusting the attitude of the substrate 11 is further added to the sample stage 1208 installed in the processing chamber 1202. That is, the sample stage 1208 can rotate in a horizontal plane, and the sample stage 1208 can be rotated.
Is rotated, when the substrate 11 has the orientation flat 11a, the substrate 11 can be rotated to orient the orientation flat 11a in a predetermined direction. The substrate 11 placed on the transfer device 1206 is carried in through the transfer port 1204 provided on the side surface of the processing chamber 1202 of the apparatus,
When placed on the sample stage 1208, the orientation of the orientation flat 11a is detected by optical means, and the orientation of the sample stage 1208 is corrected to correct the orientation to a predetermined direction.
Rotates by a predetermined amount of rotation. The calculation of the rotation amount is performed by a control unit (not shown) containing a computer.

The orientation of the orientation flat 11a usually has a fixed relationship with the crystal orientation of the single crystal layer forming the substrate 11. For this reason, by setting the orientation of the orientation flat 11a to a predetermined direction, the orientation between the crystal orientation of the single crystal layer forming the substrate 11 and the crystal orientation of the single crystal thin film to be newly formed thereon is set. The relationship can always be set to a desired relationship. Therefore, by using this apparatus, the substrate 1
For example, a new single crystal thin film can be formed epitaxially on the single crystal layer constituting the first crystal layer.

FIG. 38 is a front sectional view schematically showing the structure of another apparatus for forming a single crystal thin film in the twelfth embodiment. Also in this apparatus, the substrate 11 can be rotated horizontally to adjust the posture of the substrate 11. That is, the sample stage 1208 can be horizontally rotated by the rotation drive unit 1214. This apparatus further includes a crystal orientation detection unit 1210 for detecting the crystal orientation of the substrate 11 having a single crystal structure. Crystal orientation detection unit 1210
Has a function of irradiating, for example, X-rays to the surface of the substrate 11 and capturing a diffraction image thereof. An electric signal representing a diffraction image obtained by the crystal orientation detection device unit 1210 is transmitted to a control unit 1212 containing a computer. Control unit 1
212 decodes the diffraction image from this signal, calculates the crystal orientation in the substrate 11, calculates the deviation from the desired crystal orientation, and instructs the rotation drive unit 1214 on the rotation angle for correcting the orientation. The rotation drive unit 1214 rotates the sample stage 1208 as instructed. The deviation is eliminated by the above operation, and the relationship between the crystal orientation of the single crystal layer forming the substrate 11 and the crystal orientation of the single crystal thin film to be newly formed thereon is always set to a desired relationship. You.

The apparatus shown in FIG. 38 is different from the apparatus shown in FIG. 37 in that the crystal orientation can be adjusted with respect to an arbitrary single crystal substrate having no orientation flat 11a. Also, considering that the relationship between the crystal orientation of the substrate 11 and the orientation of the orientation flat 11a is usually not high in accuracy, the apparatus of FIG. 38 is higher than the apparatus of FIG. It can be said that the crystal orientation can be adjusted with high accuracy.

<B-13. Thirteenth Embodiment> FIG.
FIG. 2 is a partial cross-sectional front view schematically illustrating a sample stage of the single-crystal thin film forming apparatus of the example. This sample stage is used together with the apparatus 101. That is, the sample stage is used in an apparatus that supplies a reaction gas onto the substrate 11 to irradiate an atomic flow while growing an amorphous or polycrystalline thin film. In this sample stage, the support 1
The reflector 12 is fixedly supported via 304.
The turntable 1306 on which the substrate 11 is placed is connected to the rotation shaft 1308, and rotates horizontally by rotating the rotation shaft 1308 by a rotation drive unit (not shown). When the turntable 1306 rotates, the substrate 11 placed thereon rotates. By rotating the substrate and changing the direction of the substrate 11 appropriately, non-uniformity in the reaction system, that is, non-uniformity in the distribution of the supply amount of the reaction gas onto the substrate 11 or the temperature distribution on the substrate 11 is reduced. Due to this, it is possible to eliminate the non-uniformity appearing in the thickness of the growing thin film. On the other hand, when the substrate 11 rotates, the relative position between the reflection plate 12 and the substrate 11 changes. For this reason, when this sample stage is used, the irradiation of the atomic flow is performed intermittently, and only while the irradiation is stopped, the direction of the substrate 11 is changed and the growth of the thin film, that is, only the film formation is performed. Further, by the time the next irradiation is restarted, it is returned to the original orientation. The film formation and the conversion to the single crystal are performed while repeating these operations.

FIG. 40 is a plan view schematically showing another example of the sample stage. This sample stage is a sample stage that realizes processing on the substrate 11 by a batch processing method.
Used in combination with In this sample stage, the turntable 1
A substrate 1 to be processed is provided around the rotation axis
1 is placed. FIG. 40 shows an example in which four substrates 11 are placed. Among these substrates 11, FIG.
For example, the irradiation of the atomic current is performed only at the position of “A”. The supply of reaction gas is all "A" ~
This is performed at all positions of “D”.

By rotating the turntable 1310 intermittently, the substrate 11 occupying the position “A” receives both the irradiation and the supply of the reaction gas. That is, film formation and single crystallization proceed simultaneously. At only the other positions "B" to "D", only the supply of the reactive gas is performed, so that only the film formation proceeds, and the direction of the substrate 11 differs depending on the positions "A" to "D". Therefore, as the substrate 11 sequentially circulates through the positions “A” to “D”,
The nonuniformity of the degree of film formation caused by the nonuniformity in the reaction system can be eliminated. That is, it is possible to form a single-crystal thin film having a uniform thickness on the substrate 11 also by using this sample stage. And "A"
In the position, it is possible to always perform irradiation of the atomic flow. For this reason, there is an advantage that a single crystal thin film can be formed more efficiently as compared with the case where the sample stage of FIG. 39 is used.

<B-14. Fourteenth Embodiment> FIG.
It is a sectional front view showing typically a sample stand of a single crystal thin film forming device of an example. In this sample stage, a reaction gas supply member 1412 that defines a reaction gas supply path inside is rotatably attached to the bottom of the reaction vessel 1402 while maintaining airtightness. Therefore, this sample stage is suitable for being incorporated into an apparatus 100 which does not separately include a reaction gas supply system. The reaction gas supply member 1412 is
Is driven to rotate. This reaction gas supply member 141
2 is an inner tube 1416 located at the innermost layer, an outer tube 1414 located at the outermost layer, and an intermediate tube 1
418 is formed in a three-layer structure. Thereby, the reaction gas supply member 1412 defines a supply path and an exhaust path of the reaction gas between the respective layers. In addition, the reaction gas supply member 1412 is provided with a reaction gas supply port 1420 and a reaction gas discharge port 1426 via rotation seals 1430 and 1432 for maintaining airtightness, and rotatably while maintaining airtightness. Connected.

[0135] Inside the reaction gas supply member 1412, a support 140 for fixedly supporting the sample fixing table 1404 is provided.
6 is inserted. The substrate 11 as a sample is placed on the sample holding table 1404, and a heater 1408 for heating the sample is installed on the bottom surface of the sample holding table 1404. The heater 1408 may be rotated as needed to improve the temperature distribution on the substrate 11. The sample fixing base 1404 is fixed, and does not rotate even if the reaction gas supply member 1412 rotates.

The reaction gas supplied from the reaction gas supply port 1420 passes through a supply path defined between the intermediate pipe 1418 and the inner pipe 1416, and flows from the reaction gas jet port 1422 toward the upper surface of the substrate 11. Gushing. The reacted residual gas enters another path defined between the outer pipe 1414 and the intermediate pipe 1418, that is, an exhaust path, from the reaction gas recovery port 1424, and further passes through the exhaust path to reach the reaction gas outlet 1426. Is discharged to the outside. By rotating the reaction gas supply member 1412, a predetermined thin film can be uniformly grown on the substrate 11. In addition, since the substrate 11 does not rotate, the irradiation of the atomic current can be continuously performed without interruption. That is, in this sample stage, it is possible to uniformly perform film formation without interrupting single crystallization due to irradiation of the atomic flow. For this reason, it is possible to form a single crystal thin film having a uniform thickness on the substrate 11 more efficiently.

<B-15. Fifteenth Embodiment> FIG.
It is a front sectional view showing typically the structure of the single crystal thin film forming device of an example. This device is similar to the device of FIG.
ECR ion sources 1204a and 1204b are provided. The feature of the device of this embodiment is that these two ECRs
Controller units 1502, 15 for individually adjusting the density of ion beams generated by ion sources 1204a, 1204b
04. These control devices 150
2, 1504, two ECR ion sources 1204
Since the outputs of a and 1204b are controlled individually, that is, independently, it is possible to easily optimize the density of the ion beam supplied by each. For this reason, the substrate 11
There is an advantage that a high-quality single crystal thin film can be stably formed on the substrate.

<B-16. Sixteenth Embodiment> FIG.
It is a front sectional view showing typically the structure of the single crystal thin film forming device of an example. This apparatus also has two ECR ion sources 1204a and 1204b, like the apparatus of FIG. A feature of the apparatus of this embodiment is that a bias voltage is applied between these two ECR ion sources 1204a and 1204b and the substrate 11 in a direction in which ions are accelerated. That is, the RF power supply 1 that generates a high frequency
A DC voltage supply circuit is inserted in parallel with a series circuit of 602 and a matching circuit 1604 for guaranteeing impedance matching, that is, a circuit for supplying high frequency to the ECR ion sources 1204a and 1204b. The DC voltage supply circuit is configured by a series circuit of a DC power supply 1606 and an inductor 1608 for blocking a high frequency.

The supply of the high frequency and the DC voltage is performed by switching the two ECRs in a time-sharing manner by the action of the switching relay 1610.
Assigned to the ion sources 1204a and 1204b. Two ECR ion sources 1204a alternately by time division,
The reason why they are supplied to 1204b is to prevent the normal flow of the ion current from being disturbed due to the interference of the DC voltages applied to each other.

In the apparatus of this embodiment, the ECR ion source 1
Since a bias voltage is applied between the substrates 204a and 1204b and the substrate 11 in the direction of accelerating ions, there is an advantage that the directivity of the atomic flow is improved. In addition, instead of supplying a bias voltage to the two ECR ion sources 1204a and 1204b alternately in a time-sharing manner, a corresponding effect can be obtained by supplying them to both simultaneously. Also, two DC voltage supply circuits are installed, and two ECR ion sources 1204a and 1204b are provided.
, A bias voltage may be individually supplied. In this case, each ECR ion source 1204a, 1204b
Therefore, it is possible to apply an optimum bias voltage suitable for each of the above, so that there is an advantage that optimum irradiation conditions can be obtained.

<B-17. Seventeenth Embodiment> FIG.
It is a front sectional view showing typically the structure of the single crystal thin film forming device of an example. This apparatus also has two ECR ion sources 1204a and 1204b, similarly to the apparatus of FIG. A feature of the apparatus of this embodiment is that grids 1702 and 1704 to which bias voltages for adjusting ion extraction conditions are added are provided near the ion extraction ports of these two ECR ion sources 1204a and 1204b. . These grids 1702, 1704 and the substrate 1
1, DC power supplies 1706 and 1708 are interposed, respectively. The two grids 1702, 1704 are separated from each other, and the magnitude of the voltage applied to each can be adjusted independently.

When a bias voltage is applied between the grids 1702 and 1704 and the substrate 11, for example, in the direction of accelerating ions, the directivity of the atomic flow is improved. Further, in this apparatus, the magnitude of the bias voltage applied to the two grids can be adjusted independently, so that the two ECR ion sources 1
It is possible to apply an optimal bias voltage according to the operation conditions of the operation 204a and 1204b. Therefore, a high-quality single-crystal thin film can be efficiently formed on the substrate 11.

<Other Embodiments> (1) Instead of the ECR ion source, another ion source such as a cage type or a Kauffman type may be used. However, the ion flow formed at this time has a problem that the flow is diffused by the repulsive force due to the static electricity between the ions and the directivity is weakened. When the substrate 11 is irradiated with the ion current as it is, an electrically insulating substrate cannot be used. This is because charge accumulates on the substrate 11 and irradiation does not proceed. For this reason, it is necessary to provide a means for neutralizing ions and converting them into an atomic flow in the path of the ion flow.
Alternatively, the reflection of the ion stream and the conversion to the neutral atom stream may be performed at the same time by forming the reflector 12 from a conductive material such as a metal. On the other hand, an apparatus having an ECR ion source has an advantage that a neutral atomic flow can be easily obtained without using a means for neutralizing the ion flow, and can be obtained in a form close to a parallel flow. For this reason, it is easy to irradiate the thin film with the atomic flow having high incident angle accuracy. In addition, since a neutral atomic flow is mainly incident on the thin film, an insulating substrate such as a SiO ₂ substrate can be used as the substrate 11.

(2) In place of the ECR ion source, a beam source that generates a neutral atomic flow or a neutral radical flow may be used. Such a neutral atomic flow,
Beam sources for generating radical streams are already commercially available. If this beam source is used, a beam of neutral atoms or radicals can be obtained. Therefore, as in the case of using an ECR ion source, there is no need for a means for neutralizing the ion flow, and an insulating property is obtained. It is possible to form a single crystal thin film on the substrate 11.

(3) The substrate 11 may be irradiated with a molecular flow or an ion flow instead of the neutral atomic flow. That is, generally, a gas beam may be applied.
Also in this case, a single crystal thin film can be formed. However, when irradiating with an ion current, there is a disadvantage that an electrically insulating substrate cannot be used as described above.

[0146]

According to the method of the present invention, an amorphous or polycrystalline thin film of a predetermined substance formed on a substrate in a plurality of directions at a predetermined temperature. Irradiates a gas beam having an appropriate energy. As a result, the action of Brave's law and the solid phase epitaxial growth in the vertical direction progress, and this thin film is converted into a single crystal thin film. Moreover, a mask material is formed on the thin film to be irradiated prior to the irradiation, and the mask material is selectively removed. Therefore, irradiation proceeds only in a specific region on the substrate corresponding to the selectively removed portion of the mask material, and a single crystal thin film is selectively formed in this specific region. That is, the method of the present invention
This has the effect that a single-crystal thin film having a uniform crystal orientation can be selectively formed in any specific region on the substrate.

<Effect of the Invention According to Claim 2> In the method of the present invention, the irradiation of the gas beam from the formation of the mask material is repeated while changing the irradiation direction. Therefore, the method of the present invention has an effect that single crystal thin films having different crystal orientations can be selectively formed in a plurality of arbitrary specific regions on the substrate.

<Effect of the Invention According to Claim 3> In the method of the present invention, after selectively removing an amorphous or polycrystalline thin film while leaving a specific region on a substrate, a gas at a predetermined temperature is obtained. Irradiation of this beam promotes the action of Brave's law and the solid phase epitaxial growth in the vertical direction, and converts this thin film into a single crystal thin film. Therefore, the method of the present invention has an effect that a single crystal thin film having a uniform crystal orientation can be selectively formed in an arbitrary specific region on a substrate.

<Effect of the Invention According to Claim 4> In the method of the present invention, the amorphous or polycrystalline thin film on the substrate is irradiated with a gaseous beam at a predetermined temperature to obtain the Brave's law. And the solid-phase epitaxial growth in the vertical direction is promoted, and this thin film is converted into a single-crystal thin film. afterwards,
The single crystal thin film is selectively removed while leaving a specific region on the substrate. Therefore, the method of the present invention has an effect that a single crystal thin film having a uniform crystal orientation can be selectively formed in an arbitrary specific region on a substrate.

<Effect of the Invention According to Claim 5> In the method of the present invention, a gas beam is irradiated at a predetermined temperature while forming an amorphous or polycrystalline thin film on a substrate. The action of Brave's law is promoted, and the thin film being formed is successively converted into a single crystal thin film. Thereafter, the single crystal thin film is selectively removed while leaving a specific region on the substrate. Therefore, the method of the present invention has an effect that a single crystal thin film having a uniform crystal orientation can be selectively formed in an arbitrary specific region on a substrate.

<Effect of the Invention According to Claim 6> In the method of the present invention, the amorphous or polycrystalline thin film on the substrate is irradiated with a gas beam at a predetermined temperature to obtain the Brave's law. And the solid-phase epitaxial growth in the vertical direction is promoted, and this thin film is converted into a single-crystal thin film. afterwards,
After a mask material is selectively formed on the single crystal thin film, a gas beam is irradiated again from a new direction. At this time, in the region where the mask material has been selectively removed, the single crystal thin film is converted to a second single crystal thin film having a new crystal orientation. That is, the method of the present invention has an effect that single crystal thin films having different crystal orientations can be selectively formed in a plurality of arbitrary specific regions on a substrate.

<Effect of the Invention According to Claim 7> In the apparatus of the present invention, since the substrate can be scanned by the substrate moving means, a highly uniform single-crystal thin film can be formed on a long substrate. effective.

<Effect of the Invention of Claim 8> The apparatus of the present invention is provided with a beam converging means for making the cross-sectional shape of the gas beam into a band shape on the substrate, so that the single crystal thin film can be formed by scanning the substrate. There is an effect that it can be formed efficiently and with higher uniformity.

<Effect of the Invention According to Claim 9> In the apparatus of the present invention, the gas beam to be applied to the thin film is obtained by a single beam source and the reflector disposed in the path.
It is possible to irradiate gas beams from a plurality of different predetermined directions without using a plurality of beam sources. In addition, since the reflector driving means is provided, the direction of incidence of the beam on the substrate can be changed and reset. For this reason,
There is an effect that a plurality of types of single crystal thin films having different crystal structures or crystal orientations can be formed by one apparatus.

<Effect of the Invention According to Claim 10> In the apparatus of the present invention, the gas beam to be irradiated to the thin film is obtained by a single beam source and the reflector disposed on the path, so that a plurality of beams are provided. It is possible to irradiate a gas beam from a plurality of different predetermined directions without using a beam source.
In addition, since the reflector exchange means is provided, the direction of incidence of the beam on the substrate can be arbitrarily selected from a plurality of reflectors and reset. Therefore, there is an effect that a plurality of types of single crystal thin films having different crystal structures or crystal orientations can be formed by one apparatus.

<Effect of the Invention According to Claim 11> Since the apparatus of the present invention is provided with a film forming means such as a chemical vapor deposition means, it is formed by irradiating a gas beam while forming a film. The growing thin film can be sequentially converted to a single crystal thin film. Therefore, it is not necessary to promote the vertical epitaxial growth of the thin film, so that there is an effect that a single crystal thin film can be formed at a low temperature.

<Effect of the Invention of Claim 12> Since the apparatus of the present invention includes an etching unit, a film forming unit, and an irradiation unit having processing chambers communicating with each other, by using this apparatus, the apparatus can be mounted on a substrate. Before forming a thin film, an etching process for removing an oxide film can be performed, and film formation can be started while preventing new oxidation from progressing. Further, in this apparatus, since the substrate transfer means is provided, the transfer of the substrate to each processing chamber can be performed efficiently.

<Effect of the Invention of Claim 13> Since the apparatus of the present invention is provided with the attitude control means, by using this apparatus, a predetermined distance between the crystal axis of the single crystal substrate and the incident direction of the gas beam can be obtained. It is possible to set the relationship.
Therefore, there is an effect that a new single crystal thin film can be formed on the single crystal substrate epitaxially and at a crystallization temperature or lower.

<Effect of the Invention According to Claim 14> Since the apparatus of the present invention is provided with the substrate rotating means, the irradiation of the beam is intermittently performed while the reaction gas is constantly supplied, and the irradiation is stopped. It is possible to progress the formation of an amorphous or polycrystalline thin film while rotating the substrate. As a result, an amorphous or polycrystalline thin film with high uniformity can be formed, so that there is an effect that high uniformity is realized even in a single crystal thin film obtained by converting the same.

<Effect of the Invention of Claim 15> In the apparatus of the present invention, since the supply system rotating means is provided, the supply of the reaction gas and the irradiation of the beam are always performed without intermittently executing the irradiation of the beam. It is possible to obtain a highly uniform single crystal thin film while performing. That is, there is an effect that a highly uniform single crystal thin film can be efficiently formed.

<Effect of the Invention According to Claim 16> In the apparatus of the present invention, since the control means individually adjusts the operating conditions of the irradiation means, such as the output beam density, a plurality of beams applied to the substrate are provided. Are optimally adjusted. Therefore, there is an effect that a high-quality single crystal thin film can be efficiently formed.

<Effect of Claim 17> In the apparatus of the present invention, the bias voltage is applied between the ion source and the substrate by the bias means, so that the directivity of the gas beam is improved. For this reason, there is an effect that a high-quality single-crystal thin film having high uniform crystal orientation can be formed.

<Effect of Claim 18> In the device of the present invention, the conditions for extracting ions from the ion source are optimally adjusted by the grid voltage applying means, so that a high quality single crystal thin film can be efficiently formed. This has the effect.

<Effect of the Invention of Claim 19> In the method of the present invention, the atomic weight of the element constituting the gas beam irradiated onto the substrate is the largest among the atomic weights of the elements constituting the thin film to be irradiated. Therefore, atoms constituting the irradiated gas hardly remain in the irradiated thin film. Therefore, there is an effect that a single crystal thin film having few impurities can be obtained.

<Advantage of the invention according to claim 20> In the method of the present invention, the atomic weight of the element constituting the gas beam irradiated on the substrate is larger than the atomic weight of the element constituting the mask material. Therefore, atoms constituting the irradiated gas are unlikely to enter the mask material and the irradiated thin film.
Therefore, there is an effect that a single crystal thin film having few impurities can be obtained.

<Effects of the Inventions of Claims 21 to 23> In the apparatus of the present invention, since a gas beam is supplied by an electron cyclotron resonance type ion source, the directivity of the ion beam is In addition to this, a neutral beam with good directivity can be obtained at a predetermined distance or more from the ion source without using a means for neutralizing ions. Therefore, there is an effect that a high-quality single-crystal thin film can be formed easily and inexpensively.

[Brief description of the drawings]

FIG. 1 is a front sectional view showing an example of a basic configuration of a single crystal thin film forming apparatus of the present invention.

FIG. 2 is a perspective view showing an example of a reflector used in the single crystal thin film forming apparatus of the present invention.

FIG. 3 is a three-view drawing showing an example of a reflector used in the single crystal thin film forming apparatus of the present invention.

FIG. 4 is a front sectional view showing another example of the basic configuration of the single crystal thin film forming apparatus of the present invention.

FIG. 5 is a process chart showing a method according to the first embodiment of the present invention.

FIG. 6 is a process chart showing a method according to the first embodiment of the present invention.

FIG. 7 is a process chart showing a method according to the first embodiment of the present invention.

FIG. 8 is a process chart showing a method according to the first embodiment of the present invention.

FIG. 9 is a process chart showing a method according to the first embodiment of the present invention.

FIG. 10 is a process chart showing a method according to the first embodiment of the present invention.

FIG. 11 is a process chart showing a method according to a second embodiment of the present invention.

FIG. 12 is a process chart showing a method according to a second embodiment of the present invention.

FIG. 13 is a process chart showing a method according to a second embodiment of the present invention.

FIG. 14 is a process chart showing a method according to a second embodiment of the present invention.

FIG. 15 is a process chart showing a method according to a second embodiment of the present invention.

FIG. 16 is a process chart showing a method according to a second embodiment of the present invention.

FIG. 17 is a process chart showing a method according to the second embodiment of the present invention.

FIG. 18 is a process chart showing a method according to a second embodiment of the present invention.

FIG. 19 is a process chart showing a method according to a second embodiment of the present invention.

FIG. 20 is a process chart showing a method according to a fifth embodiment of the present invention.

FIG. 21 is a process chart showing a method according to a fifth embodiment of the present invention.

FIG. 22 is a process chart showing a method according to a fifth embodiment of the present invention.

FIG. 23 is a process chart showing a method according to a fifth embodiment of the present invention.

FIG. 24 is a process chart showing a method according to a fifth embodiment of the present invention.

FIG. 25 is a process chart showing a method according to a fifth embodiment of the present invention.

FIG. 26 is a process chart showing a method according to a fifth embodiment of the present invention.

FIG. 27 is a process chart showing a method according to a fifth embodiment of the present invention.

FIG. 28 is a process chart showing a method according to a fifth embodiment of the present invention.

FIG. 29 is a process chart showing a method according to a sixth embodiment of the present invention.

FIG. 30 is a front view showing an apparatus according to a seventh embodiment of the present invention.

FIG. 31 is a plan view showing an apparatus according to a seventh embodiment of the present invention.

FIG. 32 is a front sectional view showing an apparatus according to a seventh embodiment of the present invention.

FIG. 33 is a perspective view showing an apparatus according to a seventh embodiment of the present invention.

FIG. 34 is a front view showing an apparatus according to an eighth embodiment of the present invention.

FIG. 35 is a plan view showing an apparatus according to a ninth embodiment of the present invention.

FIG. 36 is a plan view showing an apparatus according to an eleventh embodiment of the present invention.

FIG. 37 is a front sectional view showing an apparatus according to a twelfth embodiment of the present invention.

FIG. 38 is a front sectional view showing an apparatus according to a twelfth embodiment of the present invention.

FIG. 39 is a partial sectional front view showing a thirteenth embodiment of the present invention.

FIG. 40 is a plan view showing an apparatus according to a thirteenth embodiment of the present invention.

FIG. 41 is a front sectional view showing an apparatus according to a fourteenth embodiment of the present invention.

FIG. 42 is a front sectional view showing an apparatus according to a fifteenth embodiment of the present invention.

FIG. 43 is a front sectional view showing an apparatus according to a sixteenth embodiment of the present invention.

FIG. 44 is a front sectional view showing an apparatus according to a seventeenth embodiment of the present invention.

[Explanation of symbols]

Reference Signs List 2 ECR ion source 7 Inert gas introduction pipe 11 Substrate 11a Orientation flat 12 Reflector 13 Reaction gas introduction pipe 100, 101, 101a Single crystal thin film forming apparatus 102 Si single crystal substrate 108 Mask material 104 SiO ₂ film 106 Si thin film 202 Substrate 214 Si film 502 Substrate 504 Single-crystal Si thin film 526 SiO ₂ insulating film 540 Mask material 710 Motor 708 Screw 720 Magnetic lens 810 Piston 808 Connecting rod 802 Reflector 906a to 906f Reflector 904 Arm 1104 Etching unit 1106 Film forming apparatus Unit 1108 Irradiation unit 1102 Transfer room 1114 Transfer robot 1204a, 1204b ECR ion source 1208 Sample stage 1202 Sample stage 1210 Crystal orientation detection unit 1212 Control unit 1214 Rotation drive Portion 1306 turntable 1310 turntable 1404 sample fixing base 1412 reactive gas supply member 1502 controller unit 1606 DC power supply 1702 and 1704 grid 1706, 1708 DC power supply

──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Toshikazu Yoshimizu 1-12-38 Esakacho, Suita-shi, Osaka Esaka Soliton Building Megachips Co., Ltd. (72) Inventor Toshifumi Asakawa 6-9-, Tsukimino, Yamato-shi, Kanagawa 25 (72) Inventor Sumiyoshi Ueyama 1-12-38 Esakacho, Suita-shi, Osaka Esaka Soliton Building Inside Mega Chips Co., Ltd. (56) References JP-A-7-58026 (JP, A) JP-A-63- 219123 (JP, A) JP-A-58-184720 (JP, A) JP-A-57-118631 (JP, A) JP-A-62-3089 (JP, A) JP-A-1-245849 (JP, A) JP-A-57-194519 (JP, A) JP-A-61-53719 (JP, A) JP-A-2-39523 (JP, A) JP-A-4-43632 (JP, A) JP-A-7-109196 (JP, A) JP-A-6-340500 JP, A) JP flat 6-128072 (JP, A) JP flat 2-184594 (JP, A) JP flat 1-320291 (JP, A) (58 ) investigated the field (Int.Cl. ^7, (DB name) H01L 21/205 C30B 25/04 C30B 29/06 504

Claims (23)

(57) [Claims] 1. A method for forming a single-crystal thin film of a predetermined substance, comprising: (a) forming a thin film of the predetermined substance, which is amorphous or polycrystalline, on a substrate; Forming a mask material on the thin film, (c) selectively removing the mask material, and (d) the single crystal thin film to be formed at a high temperature equal to or lower than the crystallization temperature of the predetermined substance. A beam of a low-energy gas that does not cause sputtering of the predetermined substance from a direction perpendicular to a plurality of densest crystal planes having different directions in the above-mentioned direction, and the mask material selectively removed is used as a shield on the substrate. And a step of irradiating the single crystal thin film. 2. The method according to claim 1, wherein the step (b) to the step (d) are performed a plurality of times, and the irradiation direction of the beam in the step (d) is different from each other in each of the steps. 2. The method for forming a single crystal thin film according to claim 1, wherein the thin film is selectively converted into a single crystal having the same. 3. A method for forming a single-crystal thin film of a predetermined substance, comprising: (a) forming an amorphous or polycrystalline thin film of the predetermined substance on a substrate; Forming a mask material on the thin film, (c) selectively removing the mask material, and (d) etching the thin film using the selectively removed mask material as a shield. (E) selectively removing the thin film while leaving a specific region on the substrate; and (e) forming a phase in the direction of the single crystal thin film to be formed at a high temperature equal to or lower than the crystallization temperature of the predetermined substance. Irradiating the substrate with a beam of a low-energy gas that does not cause the sputtering of the predetermined substance from a direction perpendicular to a plurality of different close-packed crystal planes. 4. A method for forming a single-crystal thin film of a predetermined substance, comprising: (a) forming a thin film of the predetermined substance, which is amorphous or polycrystalline, on a substrate; At a high temperature equal to or lower than the crystallization temperature of the predetermined substance, a low-energy gas that does not cause sputtering of the predetermined substance from a direction perpendicular to a plurality of close-packed crystal planes having different directions in the single crystal thin film to be formed. Irradiating the beam onto the substrate; (c) forming a mask material on the thin film after the step (b); and (d) selectively removing the mask material. (E) using the mask material selectively removed as a shield,
A step of selectively removing the thin film by subjecting the thin film to an etching process. 5. A method for forming a single-crystal thin film of a predetermined substance, comprising: (a) forming an amorphous or polycrystalline thin film of the predetermined substance on a substrate; While performing the step (a), at a low temperature at which the crystallization of the predetermined substance does not occur only in the step (a), the single crystal thin film to be formed is perpendicular to a plurality of densest crystal planes having different directions. Irradiating the substrate with a beam of a low-energy gas that does not cause the sputtering of the predetermined substance from the desired direction, and (c) after the steps (a) and (b), on the thin film. Forming a mask material, and (d) selectively removing the mask material; and (e) using the selectively removed mask material as a shield,
A step of selectively removing the thin film by subjecting the thin film to an etching process. 6. A method for forming a single-crystal thin film of a predetermined substance, comprising: (a) forming a thin film of the predetermined substance, which is amorphous or polycrystalline, on a substrate; A low-energy gas that does not cause sputtering of the predetermined substance from a direction perpendicular to a plurality of densest crystal planes having different directions in the single crystal thin film to be formed at a high temperature equal to or lower than the crystallization temperature of the predetermined substance. Irradiating the beam on the substrate with the mask material selectively removed as a shield, (c) after the step (b), forming a mask material on the thin film, (d) a step of selectively removing the mask material; and (e) a plurality of close-packed crystal faces having different directions in the single crystal thin film to be formed at a high temperature equal to or lower than the crystallization temperature of the predetermined substance. And perpendicular to the direction in the step (b). Irradiating the substrate with the low-energy gas beam that does not cause the sputtering of the predetermined material from a certain direction. 7. An apparatus for forming a single-crystal thin film of a predetermined substance on a substrate, wherein the predetermined single-crystal thin film to be formed has a predetermined direction from a direction perpendicular to a plurality of closest-packed crystal planes in different directions. A single-crystal thin-film forming apparatus, comprising: irradiation means for irradiating the substrate with a low-energy gas beam which does not cause sputtering of the substance; and substrate moving means for scanning the substrate with respect to the irradiation means. 8. The single crystal thin film forming apparatus according to claim 7, further comprising a beam focusing means for forming a cross-sectional shape of the gas beam into a band shape on the substrate. 9. An apparatus for forming a single crystal thin film of a predetermined substance on a substrate, comprising: a single beam source for supplying a beam of gas; and at least a part of the beam supplied by the beam source. A single crystal comprising: a reflector for realizing that the gas is irradiated onto the substrate in a plurality of predetermined incident directions by reflecting light; and a reflector driving means for changing an inclination angle of the reflector. Thin film forming equipment. 10. An apparatus for forming a single-crystal thin film of a predetermined substance on a substrate, comprising: a single beam source for supplying a gas beam; and a plurality of reflectors, wherein the plurality of reflectors are provided. Each of which reflects at least a part of the beam supplied by the beam source, so that the gas is irradiated onto the substrate with a plurality of predetermined incident directions related to the inclination angle of the reflector. A single crystal thin film forming apparatus further comprising a reflector exchange means for selecting one of the plurality of reflectors and providing the beam for reflection of the beam. 11. The single crystal thin film formation according to claim 7, further comprising a film forming means for forming a thin film of the same material as the amorphous or polycrystalline single crystal on the substrate. apparatus. 12. An apparatus for forming a single-crystal thin film of a predetermined substance on a substrate, comprising: an etching means for etching a surface of the substrate; and an amorphous or polycrystalline thin film of the predetermined substance. A film forming means formed on the surface of the substrate, and a low-energy gas that does not cause sputtering of the predetermined substance, from a direction perpendicular to a plurality of close-packed crystal planes having different directions in the single crystal thin film to be formed. Irradiating means for irradiating the substrate with the beam, wherein the processing chambers accommodating the substrates are communicated with each other in these means, and a substrate transfer means for taking the substrates into and out of the respective processing chambers is further provided. Single crystal thin film forming equipment provided. 13. An apparatus for forming a single-crystal thin film of a predetermined substance on a substrate having a single-crystal structure, wherein the single-crystal thin film to be formed is perpendicular to a plurality of closest-packed crystal planes in different directions. An irradiation means for irradiating the substrate with a low-energy gas beam that does not cause sputtering of the predetermined substance from the direction, and a relation between a direction of a crystal axis of the substrate and the incident direction is a predetermined relation. And a posture control means for adjusting the posture of the substrate so as to set the thickness of the substrate. 14. An apparatus for forming a single-crystal thin film of a predetermined substance on a substrate, wherein a thin film of the predetermined substance, which is amorphous or polycrystalline, is formed on the substrate by supplying a reaction gas. And a low-energy gas beam that does not cause sputtering of the predetermined substance from a direction perpendicular to a plurality of densest crystal planes having different directions in the single crystal thin film to be formed. An apparatus for forming a single crystal thin film, comprising: irradiating means for irradiating a substrate; and substrate rotating means for rotating the substrate. 15. An apparatus for forming a single-crystal thin film of a predetermined substance on a substrate, wherein a thin film of the predetermined substance, which is amorphous or polycrystalline, is formed on the substrate by supplying a reaction gas. And a low-energy gas beam that does not cause sputtering of the predetermined substance from a direction perpendicular to a plurality of densest crystal planes having different directions in the single crystal thin film to be formed. Irradiation means for irradiating the substrate with the substrate, wherein the film forming means includes a supply system rotating means for rotating an end of a supply path for supplying the reaction gas to the substrate with respect to the substrate, . 16. An apparatus for forming a single-crystal thin film of a predetermined substance on a substrate, wherein the single-crystal thin film to be formed is formed in a direction perpendicular to a plurality of close-packed crystal planes in different directions. A plurality of irradiation means for irradiating a plurality of beams of low-energy gas that does not cause sputtering of the substance to the substrate, and a control means for individually adjusting operating conditions in the plurality of irradiation means, Single crystal thin film forming equipment provided. 17. An apparatus for forming a single crystal thin film of a predetermined substance on a substrate, comprising: a gas beam supplied by an ion source; Irradiation means for irradiating the substrate with low energy that does not cause sputtering of the predetermined substance from a direction perpendicular to the dense crystal plane, and a bias voltage in a direction to accelerate ions between the ion source and the substrate. And a bias means for applying a voltage. 18. An apparatus for forming a single-crystal thin film of a predetermined substance on a substrate, comprising: a gas beam supplied by an ion source; From a direction perpendicular to the dense crystal plane, an irradiation means for irradiating the substrate with low energy that does not cause sputtering of the predetermined substance is provided, and a grid is provided near an ion outlet of the ion source,
A single crystal thin film forming apparatus further comprising a grid voltage applying means for applying a voltage for adjusting conditions for extracting ions from the ion source to the grid. 19. The atomic weight of an element constituting the gas is:
The method for forming a single-crystal thin film according to claim 1, wherein the atomic weight of the element constituting the predetermined substance is lower than the maximum one. 20. The atomic weight of an element constituting the gas is:
The method for forming a single-crystal thin film according to claim 1, wherein the atomic weight of the element constituting the mask material is lower than the largest one. 21. The single crystal thin film forming apparatus according to claim 7, wherein said irradiation means comprises an electron cyclotron resonance type ion source, and said gas source supplies said beam of said gas. . 22. The single crystal thin film forming apparatus according to claim 9, wherein the beam source is an electron cyclotron resonance type ion source. 23. The single crystal thin film forming apparatus according to claim 17, wherein the ion source is an electron cyclotron resonance type ion source.