JP3126654B2 - Active matrix type liquid crystal display - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

TECHNICAL FIELD [0001] The invention disclosed in the present specification is:
The present invention relates to a structure of an active matrix liquid crystal display device controlled by a semiconductor device using crystalline silicon. In particular, it relates to the configuration of the pixel region.

[0002]

2. Description of the Related Art Recently, a technique for manufacturing a thin film transistor (TFT) on an inexpensive glass substrate has been rapidly developed. The reason is that the demand for the active matrix type liquid crystal display device has increased.

An active matrix type liquid crystal display device is
TFTs are arranged in each of the millions of pixels arranged in a matrix, and the charge flowing into and out of each pixel electrode is determined by T
It is controlled by the switching function of the FT.

A liquid crystal is sandwiched between each pixel electrode and a counter electrode to form a kind of capacitor. Therefore, by controlling the flow of charges into and out of the capacitor by the TFT, the electro-optical characteristics of the liquid crystal can be changed, and light transmitted through the liquid crystal panel can be controlled to display an image.

Here, FIG. 5 shows a configuration diagram of a pixel region in a conventional active matrix type liquid crystal display device. As shown in FIG. 5A, a gate line 501 and a capacitor line 502 formed in parallel with the gate line 501 intersect with the data line 503 in a lattice pattern. A pixel electrode 504 is provided in a region surrounded by these.
Is arranged. The capacitor line 502 and the pixel electrode 504 are three-dimensionally overlapped via the first and second interlayer insulating films to form a storage capacitor.

Reference numeral 505 denotes a semiconductor film constituting an active layer of the TFT, 506 denotes a contact portion with a data line, and 507 denotes a contact portion with a pixel electrode. The equivalent circuit at this time is as shown in FIG.

By the way, as shown in FIG. 5A, the structure surrounded by the gate line 501 and the data line 503 and the pixel electrode 504 have not been three-dimensionally overlapped. This is because, if the pixel electrode has a structure in which the data line and the gate line are three-dimensionally overlapped with the interlayer insulating film interposed therebetween, a parasitic capacitance is generated therebetween, thereby lowering the operation speed of the liquid crystal display.

However, with the above-described structure, a gap portion 508 as shown in FIG. 5A occurs between the data line or the gate line and the pixel electrode. Since the gap portion 508 hits the edge portion of the pixel electrode, the electric field is disturbed and the image display is blurred. In addition, light leaked from the gap portion 508 causes a clear image display to be blurred.

Further, when the semiconductor film 505 constituting the active layer of the TFT is irradiated with light, there arises a problem that a photo-excitation phenomenon occurs and a leak current increases.

Therefore, as shown in FIG. 5B, a configuration is generally adopted in which a portion other than a portion required to display an image, such as a clearance portion or a TFT installation portion, is shielded by a black matrix 509 so as not to enter a visual field. It is. Black matrix 5
As 09, chromium (Cr), titanium (Ti), or the like is often used.

In this configuration, since the black matrix 509 is provided, the image display area 10 is fitted inside. That is, the area surrounded by the gate line 501 and the data line 503 cannot be effectively used to the maximum. In addition, since the capacitor line 502 is formed using the same material as the gate line 501, the capacitor line 502 has light shielding properties in most cases.

Accordingly, by providing the capacitance line 502 and the black matrix 509, an image display area 510 is provided.
Becomes narrower than necessary, which is a major obstacle in increasing the aperture ratio.

[0013]

The invention disclosed in this specification provides a technique for solving the above-mentioned conventional problems. That is, it is an object of the present invention to provide a technique for realizing a high aperture ratio without using an obstacle such as a capacitance line or a black matrix that increases the aperture ratio of a liquid crystal panel.

[0014]

The first aspect disclosed in the present specification is described below.
According to the structure of the present invention, a first interlayer insulating film formed covering a gate electrode and a gate line extending from the gate electrode, a wiring electrode formed on the first interlayer insulating film, and the wiring electrode , A second interlayer insulating film formed to cover the wiring electrode and the data line extending from the wiring electrode, and a transparent conductive film formed on the second interlayer insulating film Wherein the gate line and at least a part of the pixel electrode form a capacitor that can function as a storage capacitor only through the first interlayer insulating film.

Further, according to a second aspect of the present invention, there is provided a first interlayer insulating film formed covering a gate electrode and a gate line extending from the gate electrode, and formed on the first interlayer insulating film. A wiring electrode, a data line extending from the wiring electrode, a second interlayer insulating film formed to cover the wiring electrode and a data line extending from the wiring electrode,
A pixel electrode made of a transparent conductive film formed on the interlayer insulating film of at least a portion of the pixel electrode, wherein at least a part of the pixel electrode has a gate line extending from the gate electrode and a data line extending from the wiring electrode. Characterized by being shielded from light.

An outline of the present invention having the above configuration will be described with reference to the schematic diagram of FIG. In FIG. 1, reference numeral 101 denotes a gate line extending from a gate electrode, and reference numeral 102 denotes a TFT.
Is a data line extending from a wiring electrode connected to the source region of FIG. Also, a bold line 103 indicates a pixel electrode made of a transparent conductive film such as ITO.

The gist of the first invention is to form a storage capacitor 104 using the gate line 101 and the pixel electrode 103. However, when attention is paid to a certain pixel, when the gate line forming the storage capacitance of the pixel is the Nth gate line from the top, the pixel electrode forming the storage capacitance is N
A voltage is applied by a pixel TFT controlled by the (+1) th gate line.

With the above configuration, when data is written in the storage capacitor, the scanning of the gate line forming the storage capacitor has been completed, so that the voltage level of the storage capacitor drops due to the change in the gate voltage. Can be prevented.

Also, the gate line 101 and the pixel electrode 10
3, there are first and second interlayer insulating films. However, in the present invention, before forming the pixel electrode 103,
A region to be the storage capacitor 104 has been selectively etched in advance. Therefore, the storage capacitor 104 has a structure in which a stacked film of the anodic oxide film and the first interlayer insulating film or only the anodic oxide film is provided between the gate line 101 and the pixel electrode 103.

Therefore, it is desirable that the first interlayer insulating film be made of a material having a relative dielectric constant as high as possible. This is because the higher the relative permittivity, the more the capacity of the storage capacitor can be obtained. The same effect can be obtained by making the thickness of the first interlayer insulating film as thin as possible.

Next, the gist of the second invention is to make the edge of the pixel electrode 103 overlap the gate line 101 and the data line 102 as shown in FIG. That is, the gate lines 101 and the data lines 102 are used as black matrices.

In this case, the problem is that the pixel electrode 103
And a parasitic capacitance formed between the gate line 101 and the data line 102. However, in the present invention, since an organic resin material or an inorganic material having a low dielectric constant is used as the second interlayer insulating film, the parasitic capacitance can be reduced as much as possible.

Further, an organic resin material or an inorganic material is
Since the film is formed while increasing the film thickness to about 5 μm, the parasitic capacitance can be suppressed to a negligible level.

As described above, a necessary condition of the present invention is that the relative dielectric constant of the anodic oxide film and the first interlayer insulating film is higher than that of the second interlayer insulating film. Desirably, the first interlayer insulating film is made of a material having a relative dielectric constant as high as possible, and the second interlayer insulating film is made of a material having a relative dielectric constant as low as possible.

The equivalent circuit of the pixel region having the structure shown in FIG. 1 has the structure shown in FIG.

Further, as shown in FIG. 1, at the same time as the formation of the wiring electrode and the data line extending from the wiring electrode, a light-shielding film 105 for shielding at least a region where a channel is formed is provided to prevent photoexcitation of the semiconductor layer. I can do it.

The invention having the above-described configuration will be described in detail with reference to the embodiments described below.

【Example】

[Embodiment 1] In this embodiment, an example of forming a pixel region having the structure shown in FIG. 1 by utilizing the present invention will be described. More specifically, a technique of substituting a black matrix with a gate line and a data line and a technique of substituting a capacitor line with a gate line will be described in detail.

FIG. 3 is a process chart for manufacturing a pixel TFT constituting the pixel region shown in FIG. First, a glass substrate 301 having a 2000-mm insulating film as a base film on the surface.
Is formed to a thickness of an amorphous silicon film 500 (not shown). The insulating film is made of silicon oxide (SiO ₂ ), silicon oxynitride (S
iO _X N _Y ), silicon nitride film (SiN), etc.
The film may be formed by the method D or the low pressure thermal CVD method.

Next, the amorphous silicon film (not shown) is crystallized by means such as heating, laser annealing, or a combination of both. It is effective to add a metal element that promotes crystallization during crystallization.

After the crystallization is completed, the obtained crystalline silicon film (not shown) is patterned to form an island-shaped semiconductor layer 302. After the island-shaped semiconductor layer 302 is formed, a silicon oxide film 303 functioning as a gate insulating film is formed to a thickness of 1500 ° later. Of course, a silicon oxynitride film or a silicon nitride film may be used.

Next, a conductive film 304 having a light-shielding property is formed.
Deposit a film to a thickness of 3000 mm. In this embodiment, an aluminum film containing 0.2 wt% of scandium is used. Scandium has an effect of suppressing protrusions such as hillocks and whiskers generated on the aluminum surface during heat treatment or the like. This aluminum film 304 functions as a gate electrode later.

Thus, the state shown in FIG. 3A is obtained.
When the state shown in FIG. 3A is obtained, anodization is performed in an electrolytic solution using the aluminum film 304 as an anode. As the electrolytic solution, a solution obtained by neutralizing a 3% solution of tartaric acid in ethylene glycol with aqueous ammonia to adjust the pH to 6.92 is used. The treatment is performed using platinum as a cathode with a formation current of 5 mA and a reaching voltage of 10 V.

The thus formed thin and dense anodic oxide film (not shown) has an effect of improving the adhesion to the photoresist when patterning the aluminum film 304.
Further, the film thickness can be controlled by controlling the voltage application time.

Next, the aluminum film 304 is patterned to form a gate electrode (not shown). However, the part that actually functions as the gate electrode is a part of the inner part that finally remains.

Next, a second anodic oxidation is performed to form a porous anodic oxide film 305. The electrolytic solution is a 3% oxalic acid aqueous solution, and a formation current is 2-3 mA using platinum as a cathode.
The processing is performed with a reaching voltage of 8V.

At this time, the anodic oxidation proceeds in a direction parallel to the substrate. Further, the length of the porous anodic oxide film 305 can be controlled by controlling the voltage application time.

Further, after removing the photoresist (not shown) used for patterning the aluminum film with a dedicated stripper, the third anodization is performed to obtain the state shown in FIG. 3B.

For the anodic oxidation, an electrolytic solution prepared by neutralizing a 3% solution of tartaric acid in ethylene glycol with aqueous ammonia and adjusting the pH to 6.92 is used. Then, using platinum as a cathode, a formation current of 5 to 6 mA and an ultimate voltage of 1
Process as 00V.

The anodic oxide film 306 formed at this time is very dense and strong. Therefore, the gate electrode 3 is not damaged due to damage or heat generated in a later process such as a doping process.
07 is protected.

Further, since the strong anodic oxide film 306 is hard to be etched, there is a problem that the etching time is long when a contact hole is opened. Therefore, it is desirable that the thickness be 1000 mm or less.

Next, the silicon oxide film 303 is dry-etched using the porous anodic oxide film 305 and the gate electrode 307 as a mask to form a gate insulating film 308.

Next, impurities are implanted into the island-shaped semiconductor layer 302 by an ion doping method. For example, if an N-channel TFT is manufactured, P + ions may be implanted as impurities, and if a P-channel TFT is manufactured, B + ions may be implanted as impurities.

First, the first ion doping is performed in the state shown in FIG. In this embodiment, implantation of P + ions is performed at an acceleration voltage of 90 kV and a dose of 3 × 10 ¹³ atoms / cm.
Perform in ² .

Then, the gate electrode 307 and the porous anodic oxide film 305 serve as a mask, and regions 309 and 310 which will later become the source / drain are formed in a self-aligned manner.
(FIG. 3 (C))

Next, as shown in FIG. 3C, the porous anodic oxide film 305 is removed, and a second doping is performed. The second P + ion implantation was performed at an acceleration voltage of 10 k.
V, at a dose of 5 × 10 ¹⁴ atoms / cm ² .

Then, low concentration impurity regions 311 and 312 having a lower impurity concentration than source region 309 and drain region 310 are formed in a self-aligned manner with gate electrode 307 serving as a mask.

At the same time, since no impurity is implanted immediately below the gate electrode 307, a region 313 functioning as a TFT channel is formed in a self-aligned manner.

The low concentration impurity region (or LDD region) 312 thus formed is
Has an effect of suppressing the formation of a high electric field between the gate electrode and the drain region 310.

Next, a KrF excimer laser was used for 200 to
By irradiating with an energy density of 300 mJ / cm ² ,
Activation of the ion-implanted P + ions is performed. In addition,
Activation may be performed by thermal annealing at 300 to 450 ° C. for 2 hours, or laser annealing and thermal annealing may be used in combination.

Next, a first interlayer insulating film 314 is formed by a plasma CVD method. As the interlayer insulating film 314,
A silicon oxide film, a silicon oxynitride film, a silicon nitride film, or the like can be used. Since the first interlayer insulating film 314 serves as an insulating layer of the storage capacitor 104 in FIG. 1, it is preferable to use an insulating film having a relative dielectric constant as high as possible. for that reason,
In this embodiment, a silicon nitride film having a relative dielectric constant of about 7 is used. In addition, it is possible to increase the capacity by reducing the film thickness to about 1000 °.

After forming the first interlayer insulating film 314, a contact hole is formed in the source region 309, and an aluminum film (not shown) is formed to a thickness of 3000 °. Next, a source electrode 315 and a light shielding film 316 are formed by patterning an aluminum film (not shown). Light shielding film 31
Reference numeral 6 plays a role in preventing light from being irradiated to the periphery of the channel region 313 to excite carriers. (FIG. 3 (D))

Next, a second interlayer insulating film 317 is formed to a thickness of 1 to 5 μm so as to cover the source electrode 315 and the light shielding film 316. The second interlayer insulating film 317 can be made of an organic resin material or an inorganic material. In this embodiment, polyimide is used as the organic resin material.

Then, after patterning the second interlayer insulating film 317 to form an opening for forming a storage capacitor on the gate line, a pixel electrode 318 made of a transparent conductive film is formed. (FIG. 3 (E))

In the present invention, as shown in FIG.
When a wiring composed of the data line 01 and the data line 102 is used as a black matrix, a parasitic capacitance between the pixel electrode and the wiring becomes a problem. However, the relative permittivity of the resin material is 2.8 to 3.4, which is lower than that of a silicide film such as a silicon nitride film, and the film thickness can be easily increased. It is possible.

Further, since the surface of the resin material 317 exhibits excellent flatness, the pixel electrode 318 formed thereon also exhibits excellent flatness. Disturbance can be eliminated.

Thus, a pixel TFT having a structure as shown in FIG. 3E is manufactured. Although not described in this embodiment, when a driving circuit is incorporated on the same substrate, a driver TFT and a pixel TFT are manufactured at the same time.

The driver TFT is basically a pixel TFT.
It is manufactured in the same process as the above. However, a pixel electrode is not required, and the source electrode 315 and the light shielding film 31 in FIG.
This is completed by forming a drain electrode at the same time as forming 6.

Here, FIG. 4 is a cross-sectional view in which the storage capacitor 104 is divided by a line indicated by AB in FIG. FIG.
3A, reference numeral 401 denotes a gate insulating film, 402 denotes a gate line extending from a gate electrode, and 403 denotes an anodized film.

As shown in FIG. 4A, the first interlayer insulating film 404 is as thin as about 1000 ° and has a high relative dielectric constant, so that it is held between the pixel electrode 405 and the gate line 402. A capacitor that can function as a capacitor is formed. In addition,
Reference numeral 406 denotes a pixel electrode end of another adjacent pixel.

Further, since the pixel electrodes 405 and 406 are three-dimensionally overlapped with the gate line 402, the same effect as the black matrix can be given to the gate line 402. In this case, the second interlayer insulating film 407 made of a resin material is as thick as 1 to 5 μm and has a low relative dielectric constant, so that the parasitic capacitance formed between the transparent electrode 405 and the gate line 402 is reduced. The effects can be ignored.

Further, as shown in FIG. 4B, a structure using only the anodic oxide film as the insulating layer of the storage capacitor can be used. At this time, the thickness of the storage capacitor can be reduced to about 500 to 1000 mm.

As described above, it is a necessary condition of the present invention that a thin high dielectric constant material is used for the first interlayer insulating layer and a thick low dielectric constant material is used for the second interlayer insulating film. is there.

By satisfying this condition, the gate line can be used as a conventional capacitance line and the gate line and data line can be used as a conventional black matrix. That is, a high aperture ratio can be realized in an active matrix liquid crystal display device. [Embodiment 2] In this embodiment, an example in which the shape of the island-shaped semiconductor layer of Embodiment 1 is changed will be described. The manufacturing steps of the pixel TFT and the driver TFT have already been described in detail in the first embodiment, and a description thereof will be omitted.

In FIG. 2, reference numeral 201 denotes a gate line, 202 denotes a data line, and 203 denotes an island-like semiconductor layer constituting an active layer. As shown in FIG. 2, the gate line 201 functions as a gate electrode as it is.

The feature of this embodiment is that the island-shaped semiconductor layer 203 is completely shielded from light by the gate lines 201 and the data lines 202. Therefore, only the contact portion with the pixel electrode 204 protrudes from the image display area. Therefore, it is not necessary to provide the light-shielding film 316 made of an aluminum film, which is required in the first embodiment.

The other structure is the same as that of the first embodiment.
01 forms a storage capacitor 205 only through a laminated film of a pixel electrode 204, an anodic oxide film and a first interlayer insulating film, or only through an anodic oxide film, and forms a gate line 201 and a data line 202.
Plays the role of a black matrix.

Therefore, according to the present embodiment, it is possible to manufacture a liquid crystal display device having a high aperture ratio of 90% or more by making the most of the image display area. [Example 3]

In this embodiment, an example in which an added value is added to the island-shaped semiconductor layer in the first or second embodiment will be described.
Specifically, this example employs a structure in which the channel length and channel width of the channel region change between the on state and the off state of the TFT.

This technique has already been reported by the present inventors. The gist of the technique is to substantially increase the channel length when the TFT is in the off state and to reduce the off-current by reducing the channel width. It is. The outline of the technology will be described below.

FIG. 7 shows an island-shaped semiconductor layer 701 formed according to the procedure of the first embodiment. Later, ion implantation is selectively performed on a region 702 functioning as a channel. For example, in the case of manufacturing an N-channel TFT, P + ions are added in an amount of 1 × 10 ¹² to 1 × 10 ¹⁴ atoms / cm.
² , preferably at a dose of 3 × 10 ^{12 to} 3 × 10 ¹³ atoms / cm ² .

Then, regions 703 to 705 implanted with ions are formed so as to block the channel region. These regions 703 to 705 do not necessarily have to be in contact with the outer edge of the island-shaped semiconductor layer as shown in FIG. In other words, a state in which the channel 702 is scattered in an island shape in a region 702 to be a channel later may be used.

The outline of the electrical characteristics of the TFT manufactured using the island-shaped semiconductor layer into which such ion implantation has been performed will be described with reference to FIG.

In FIG. 8A, 801 is a source region,
Reference numeral 802 denotes a drain region, and reference numerals 803 to 805 denote regions which have been ion-implanted in advance as described above, and are referred to as floating island regions. At this time, an undoped substantially intrinsic semiconductor region (referred to as a base region) 80
6 and the boundary between the floating island regions 803 to 805 have a high potential barrier. Therefore, when the N-channel TFT is off, electrons move slightly along the arrow in the base region 806. This movement of the electrons is observed as an off current (or a leak current).

However, when the N-channel TFT is in the ON state, the base region 806 is inverted and the floating island regions 803 to 8-3 are turned off.
Since the potential barrier to the area 05 becomes negligible, a large amount of electrons move along the path shown by the arrow in FIG. This electron movement is observed as an on-current.

The manner in which the potential barrier changes between the off state and the on state of the TFT in this manner will be schematically described with reference to FIG. In FIG. 9, Vg is the gate voltage (V
g> 0), Ec represents a conduction band, Ev represents a valence band, and Ef represents a Fermi level.

First, when the N-channel type TFT is off (state in which a negative voltage is applied to the gate), the base region 80
6 is in a band state as shown in FIG. That is, holes which are minority carriers are collected on the surface of the semiconductor and electrons are discharged, so that the movement of electrons between the source and the drain is extremely small.

On the other hand, since the floating island regions 803 to 805 have been implanted with P + ions, the Fermi level Ef is lower than the conduction band Ef.
It is pushed up near c. At this time, the floating island area 8
From 03 to 805, the band state is as shown in FIG.

As shown in FIG. 9B, in the floating island regions 803 to 805, which are N-type semiconductor layers, the energy band is slightly bent even when a negative voltage is applied to the gate.

Therefore, the energy difference between the energy of the valence band on the semiconductor surface in FIG. 9A and the energy of the valence band on the semiconductor surface in FIG. 9B corresponds to a potential barrier. Therefore, electrons are transferred to the base region 80.
6 and the floating island regions 803 to 805 do not reciprocate.

Next, when the N-channel TFT is in the ON state (state in which a positive voltage is applied to the gate), the base region 80
6 is in a band state as shown in FIG. In other words, electrons, which are majority carriers, are accumulated on the semiconductor surface, so that electrons move between the source and the drain.

At this time, the floating island regions 803 to 805 are in a band state as shown in FIG. FIG.
As shown in (D), similarly to the case where a negative voltage is applied to the gate, the floating island regions 803 to 80 which are N-type semiconductor layers are formed.
In No. 5, even when a positive voltage is applied to the gate, the energy band hardly bends.

However, in FIG. 9D, since the Fermi level Ef is originally pushed up near the conduction band Ec, a large number of electrons always exist in the conductor.

Therefore, when a positive voltage is applied to the gate,
Since both the base region 806 and the floating island regions 803 to 805 are in a band state in which electrons can easily move, the potential barrier at the boundary between the base region 806 and the floating island regions 803 to 805 can be ignored.

As described above, in the off state, the base region 80
6 is the electron movement path, and in the ON state, the base area 806 and the floating island areas 803 to 805 are the electron movement paths.

That is, the W / L ratio when the TFT is on is much larger than the W / L ratio when the TFT is off, and it is possible to reduce the off-current without impairing the on-current. . Thereby, the on / off current ratio can be increased.

With such a structure, the island-shaped semiconductor layer of the pixel TFT can be reduced as much as possible, and the on / off current ratio can be increased. Therefore, for example, even when the circuit configuration shown in FIG. 1 is employed, it is possible to arrange high-performance pixel TFTs without reducing the aperture ratio.

[Embodiment 4] This embodiment shows an example in which the shape of the storage capacitor is changed in Embodiments 1 to 3. The manufacturing steps of the TFT and the storage capacitor are the same as those in the first embodiment, and the description is omitted here.

FIG. 10 is a sectional view showing the structure of a storage capacitor according to this embodiment. In FIG. 10A, 11 is a gate insulating film, 12 is a gate line extending from a gate electrode, and 13 is an anodized film.

As shown in FIG. 10A, the first interlayer insulating film 14 is as thin as about 1000 ° and has a high relative dielectric constant, so that it is held between the pixel electrode 15 and the gate line 12. A capacitor that can function as a capacitor is formed. Note that 16
Are pixel electrode ends of another adjacent pixel.

The difference from FIG. 4A described in the first embodiment is that the capacitor is formed only on the upper surface of the gate line in FIG. 4A, while the gate line is formed in FIG. Is that a capacitance is formed by the upper surface and the side surface of the substrate.

The pixel electrodes 15 and 16 are connected to the gate line 12.
Therefore, the same effect as the black matrix can be given to the gate line 12. in this case,
The second interlayer insulating film 17 made of a resin material has a thickness of 1 to 5 μm.
m and a low dielectric constant, the effect of the parasitic capacitance formed between the pixel electrode 15 and the gate line 12 can be neglected.

Further, as shown in FIG. 10B, a structure using only an anodic oxide film as an insulating layer of a storage capacitor is also possible. At this time, the thickness of the holding capacity is 500 ~ 1000Å
It can be made as thin as possible.

With the above structure, a larger storage capacity can be ensured. That is, a high aperture ratio and high-definition image display can be realized in the active matrix type liquid crystal display device.

[Embodiment 5] In this embodiment, an LPD (Liquid Phase Depo) is used as the second interlayer insulating film.
An example is shown in which an insulating film applied by a method is used. Of course, as shown in Example 1, it is important that the dielectric constant be low and the film thickness can be easily increased. Note that the manufacturing steps of the pixel TFT and the driver TFT have already been described in detail in the first embodiment, and a description thereof will be omitted.

The outline of the film formation by the LPD method (also called the spin method) is as follows. The description will be performed for the case of silicon oxide film is an inorganic material (SiO _X), but, SiOF film (relative dielectric constant 3.2 to 3.3), polyimide (relative dielectric constant as the organic resin material as other inorganic materials 2.8 to 3.4) can also be used.

First, an H ₂ SiF ₆ solution is prepared, and SiO ₂ : xH ₂ O is added thereto, followed by stirring for 3 hours. The processing temperature at this time is kept at 30 ° C. Next, the solution after stirring is filtered to adjust the solution to a desired concentration. When the adjustment is completed, the mixture is stirred while warming it to 50 ° C. in a water bath or the like.

Thus, the preparation of the solution for application is completed.
Also, for example, if H ₃ BO ₃ is added to this solution, B
A silicon oxide-based coating containing + ions (a coating called a so-called BSG) can be formed.

After the substrate to be treated is immersed in the solution prepared according to the above procedure, rinsed with pure water and dried, the film formation is completed. If an organic resin material is applied, a desired coating solution may be prepared and a coating may be formed by the LPD method.

Examples of the organic resin material include polyimide and the like, and the relative dielectric constant is as low as 2.8 to 3.4. In this case, a coating solution is applied onto the substrate to be processed held on the spinner, and the spinner is rotated at 2000 rpm to form a coating. After forming the film, bake it at 300 ° C for about 30 minutes to improve the film quality.

As described above, the desired film can be formed relatively easily by the LPD method. That is, it is possible to greatly improve the throughput. In addition, since the film thickness can be freely adjusted by the time of immersion in the solution (the number of revolutions when a spinner is used) and the concentration of the solution, a thick and flat film can be easily formed.

[0101]

According to the first invention disclosed in this specification, first, it is possible to substitute a gate line as a capacitance line. According to the second invention disclosed in this specification,
The gate lines and data lines can be used as black matrices.

As an effect of the present invention, since the pixel region can be formed without providing the capacitance line and the black matrix, the region surrounded by the gate line and the data line can be effectively used to the maximum and the high region of 90% or more can be obtained. It is possible to realize an aperture ratio.

[0103]

[Brief description of the drawings]

FIG. 1 is a diagram illustrating a configuration of a pixel region in a liquid crystal display device.

FIG. 2 is a diagram illustrating a configuration of a pixel region in a liquid crystal display device.

FIG. 3 is a diagram schematically illustrating a manufacturing process of a pixel TFT.

FIG. 4 is a diagram showing a cross-sectional structure of a storage capacitor.

FIG. 5 is a diagram showing a configuration of a pixel region in a conventional liquid crystal display device.

FIG. 6 is a diagram showing an equivalent circuit of a pixel region in a liquid crystal display device.

FIG. 7 is a diagram schematically illustrating a structure of a semiconductor layer.

FIG. 8 is a diagram schematically illustrating electric characteristics of a semiconductor layer.

FIG. 9 is a diagram schematically illustrating a band state of a semiconductor layer.

FIG. 10 illustrates a cross-sectional structure of a storage capacitor.

[Explanation of symbols]

 Reference Signs List 101 gate line 102 data line 103 pixel electrode 104 storage capacitor 105 light-shielding film 301 glass substrate 302 island-like semiconductor layer 303 silicon oxide film 304 conductive film 305 porous anodic oxide film 306 dense anodic oxide film 307 gate electrode 308 gate insulation Film 309 Source region 310 Drain region 311, 312 Low-concentration impurity region 313 Channel formation region 314 First interlayer insulating film 315 Wiring electrode 316 Light shielding film 317 Second interlayer insulating film 318 Pixel electrode 508 Clearance portion 509 Black matrix 701 Island shape Semiconductor layer 702 channel region 703 to 705 ion implantation region 801 source region 802 drain region 803 to 805 floating island region 806 base region

────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-7-302912 (JP, A) JP-A-3-288824 (JP, A) JP-A-4-305627 (JP, A) JP-A-6-302 342809 (JP, A) JP-A-4-43328 (JP, A) JP-A-4-283729 (JP, A) JP-A-6-202154 (JP, A) JP-A-4-68318 (JP, A) JP-A-6-95150 (JP, A) JP-A-3-274029 (JP, A) JP-A-6-67210 (JP, A) (58) Fields investigated (Int. Cl. ⁷ , DB name) G02F 1/136 G02F 1/1343

Claims (8)

(57) [Claims] A first interlayer insulating film on a gate line;
Data line on the interlayer insulating film, and a second layer on the data line
A pixel electrode on the interlayer insulating film and the second interlayer insulating film.
An active matrix liquid crystal display device having a storage capacitor including the gate line and the pixel electrode,
In the portion forming the storage capacitor, the second interlayer insulating film
An active matrix type liquid crystal display device which has been removed . (2) A first interlayer insulating film on a gate line;
Data lines on the interlayer insulating film of
Second interlayer insulating film made of fat and second interlayer insulating film
Active matrix liquid crystal display including pixel electrode on film
A device, A storage capacitor including the gate line and the pixel electrode;
In the portion forming the storage capacitor, the second interlayer insulating film
Active matrix characterized by being removed
Liquid crystal display device. 3. The active matrix type liquid crystal display according to claim 1 , wherein a relative dielectric constant of said first interlayer insulating film is higher than a relative dielectric constant of said second interlayer insulating film. apparatus. Te wherein any one smell of claims 1 to 3 <br/>, the first interlayer insulating film and characterized in that an acid of the silicon film, silicon oxynitride film or a silicon nitride film Active matrix type liquid crystal display device. (5) Any one of claims 1 to 4
The pixel electrode is connected to the pixel electrode via the second interlayer insulating film.
An active mask characterized by overlapping with the data line
Trix type liquid crystal display. 6. In any one of claims 1 to 5
The storage capacitance is the gate line, The pixel electrode and
The gate line comprises an anodic oxide film.
Active matrix display device. 7. In any one of claims 1 to 5
The storage capacitor is connected to the gate line, the pixel electrode,
An anodic oxide film of said gate line and said first interlayer insulation
Active matrix table characterized by comprising a film
Indicating device. Te 8. any one odor <br/> of claims 1 to 7, when said retaining includes a gate line capacitance is a gate line of the N-th, included before Kiho lifting capacity the pixel electrode (N +
1) An active matrix liquid crystal display device in which a voltage is applied by a pixel TFT controlled by a first gate line.