JP3114674B2 - Film forming apparatus and film forming method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a film forming technique for forming a film on a substrate surface, and more particularly to a film forming apparatus suitable for forming a barrier film on a semiconductor substrate and a film forming method using the apparatus. About.

[0002]

2. Description of the Related Art Conventionally, in a method of manufacturing a semiconductor device,
2. Description of the Related Art Film formation by a sputtering method is generally used for forming a conductor film of an internal wiring connecting elements and a peripheral circuit formed on a semiconductor substrate. Recently, as the miniaturization of semiconductor devices has progressed, the diameters of contact holes for connecting wirings and impurity diffusion layers and through holes for connecting wirings to wirings have inevitably been reduced. When a conductive film is formed on these contact holes and through holes (fine holes) by a conventional conventional sputtering method, a phenomenon such as poor adhesion to the formed conductive film and peeling off occurs, and It has become difficult to ensure the reliability and electrical characteristics required for the device.

Therefore, as the formation of a conductor film in a fine hole, formation of a conductive film in which blanket tungsten (W) is buried by a CVD method excellent in film coverage has become mainstream. The formation of this conductive film will be described with reference to the process cross-sectional view of FIG. First, the interlayer insulating film 2 is formed on the impurity diffusion layer 3p formed on the silicon substrate 1p.
A p and a contact hole are sequentially formed (FIG. 4A).
Thereafter, when W is formed directly on the insulating film 2p and in the contact hole, W formed on the insulating film 2p is peeled off due to poor adhesion, or the impurity diffusion layer 3p is destroyed by a reaction gas at the time of W formation. I do. Therefore, as a barrier film for avoiding these phenomena, a titanium film 4p and a titanium nitride 5p are sequentially deposited by sputtering or the like before W growth (FIG. 4B). Further, at this time, for the purpose of improving the barrier properties of these barrier films, a nitrogen atmosphere is used.
The heat treatment may be performed within a temperature range of 00 to 1000 ° C. After forming the barrier film including these processes, W6p is grown on the entire surface (FIG. 4C). Then blanket W
6p is patterned and used as a wiring, or an aluminum wiring is formed after etching back so as to remain only in the contact hole.

FIG. 5 is a schematic view of each sputtering apparatus for forming a titanium film or a titanium nitride film as the above-mentioned barrier layer, and an end portion (a wafer end) of a substrate (silico wafer) 3 is indicated by a circle. 8 also shows the film formation region. In forming the titanium film and the titanium nitride film on the substrate 3, first, a titanium film is formed by a sputtering device (FIG. 5A), and then the titanium film is formed by another sputtering device (FIG. 5B). A titanium nitride film is formed thereon. Each sputtering device is a general DC magnetron type, and includes a cathode magnet 1, a titanium target 2, a shield 11, a stage 5, and the like.

The sputtering apparatus shown in FIG. 5A is for forming a titanium film, and a titanium film is formed in a region about 5 mm from the side surface of the wafer end by a clamp 10 for masking the periphery of the wafer (forming a shadow portion around the wafer). The film 7 is not formed. The sputtering apparatus shown in FIG. 5B is for forming a titanium nitride film, and has no clamp 10 unlike the above-described titanium film formation. Therefore, the titanium nitride film 9 is formed on the entire surface of the silicon substrate wafer by reactive sputtering. The titanium film 7 that has been formed and is formed first has a titanium nitride film 9 even at the wafer end.
Is completely covered by and not exposed.

The above titanium film 7 and titanium nitride film 9
The laminated film is formed in order to prevent peeling of the substrate in which the fine holes are formed, when the blanket W is buried and formed in a subsequent step. That is, it is known that if W is grown on the titanium film without being completely covered by the titanium nitride film and exposed on the surface, film peeling occurs between the titanium film and the base film. The mechanism currently considered is that when F of WF6, which is generally used during blanket W growth, is dissociated and enters into the titanium film by a certain amount or more, the adhesion between the titanium film and the base film is reduced and the film becomes thin. Is peeled off. Regarding this mechanism, G.
Research by Ramanath et al. (F accumulation in Ti: the ca
use of adhesion failure of TiN / Ti liner on SiO2 du
ring W CVD?, June 18-20, 1996 VMIC Conference, 199
6 ISMIC-106 / 96/0333 (c)). Therefore, the substrate (silicon wafer) 3
In order to prevent the upper titanium film 7 from being directly exposed to F in a subsequent step, a sputtering apparatus as shown in FIG.
The film is formed such that the titanium film 7 is completely covered with the titanium nitride film 9.

[0007]

However, the method of forming a titanium film and a titanium nitride film using each sputtering apparatus shown in FIG. 5 has the following problems. That is, according to the above-described film forming method, the film formation area of the titanium film on the wafer surface is made smaller than the film formation area of the titanium nitride film so that the titanium film is completely covered with the titanium nitride film. Therefore, a region where the film thickness required for forming the semiconductor device is secured on the wafer surface or an effective region (a region where the titanium film and the titanium nitride film are formed), which is a region where the semiconductor device can be formed, is reduced. I do. In the case of the sputtering apparatus shown in FIG. 5A, a shadow portion (clamp portion) is formed in a region of about 5 mm around the wafer due to the presence of the clamp 10, and a titanium film is not formed in this portion. A semiconductor device cannot be manufactured.

In such a case, the effective area on the wafer surface can be increased by reducing the shadow portion by the clamp 10. However, if the shadow portion is made smaller, the margin of positional accuracy between the substrate 3 to be transported and the clamp 10 becomes stricter.
A clamp area (shadow portion) of about mm is required.
Therefore, when the effective area is reduced due to the presence of the shadow portion in the peripheral portion of the wafer, the number of manufactured chips per silicon wafer is reduced, and the manufacturing yield is reduced.

Further, according to the above-described film forming method, a titanium film or a titanium nitride is sputtered by a dedicated sputtering apparatus depending on the presence or absence of the clamp 10 at the time of film formation (FIGS. 5A and 5B)
It is necessary to form a film. In general, a titanium nitride film formed by a sputtering method has a high stress. Therefore, if a thick titanium nitride film is formed on an inner wall of a sputtering apparatus in a continuous film forming process on a substrate (silicon wafer), the titanium nitride film may be generated by plasma during sputtering. The film is peeled off due to thermal stress, and becomes a particle source.

Therefore, in general, in a titanium nitride film sputtering apparatus, a titanium paste (titanium paste) is applied to the inner wall of the apparatus by titanium sputtering every predetermined number of substrates to be processed. The cycle of this titanium paste is, for example,
It is appropriate to treat 100 substrates with a titanium nitride film equivalent to a thickness of 1000 angstroms and then process 25 substrates with a titanium film equivalent to a thickness of 600 angstroms. If the titanium paste is deposited on the inner wall of the device as a laminated film of titanium nitride and titanium, the stress of the deposited film is reduced by the titanium film having a small stress and having a stress relaxation effect, and the film peeling due to thermal stress is suppressed. Therefore, generation of particles can be avoided. However, periodically performing the titanium paste that does not contribute to mass production lowers the operation rate of the sputtering apparatus and wastes the target in the sputtering apparatus, resulting in an increase in cost. As a result, productivity is greatly reduced.

When considering only the problem of the effective area on the wafer surface and the problem that the titanium nitride film formed on the inner wall of the sputtering device becomes a particle source, the deposition of the titanium film and the titanium nitride film can be performed by the same apparatus or If it is done between devices, it will be solved at the same time. That is, for example, as shown in FIG. 6, the formation of a titanium film (FIG. 6A) and the formation of a titanium nitride film (FIG. 6B) may be performed alternately in a sputtering apparatus having the same configuration. . According to this film forming method, both the titanium film 7 and the titanium nitride 9 film have a sufficient effective area. In addition, since the titanium film 7 and the titanium nitride film 9 can be alternately formed in the apparatus having the same configuration or between the apparatuses, it is not necessary to perform a special titanium paste. However, according to this film forming method, the titanium film 7 and the titanium nitride film 9 become substantially the same film forming region, and the titanium film 7 is exposed at the wafer edge. As a result, as described at the beginning of the prior art, film separation occurs between the titanium film and the base film at the time of W growth in a subsequent step, and the production yield is greatly reduced.

[0012] Therefore, with the current sputtering apparatus, it is impossible to form films in different film formation regions in the same configuration of the apparatus. Therefore, since different film formation areas are formed in each sputtering apparatus, there is a problem of an effective area on the wafer surface. Also, the problem that the titanium nitride film formed on the inner wall of the sputtering apparatus becomes a particle source always occurs. The present invention has been made in view of the above circumstances, and enables a film forming apparatus having the same structure to form films in different film forming regions, thereby improving productivity and preventing a decrease in manufacturing yield. And a film forming method.

[0013]

According to the present invention, there is provided a film forming apparatus for forming a film on a substrate surface, comprising: a stage on which the substrate is mounted; a cylindrical side wall surrounding the periphery of the stage; Driving means for changing the relative position between the stage and the cylindrical side wall in the axial direction of the cylindrical side wall, and connecting the upper end of the cylindrical side wall to the outer periphery of the stage.
Angle between the shortest straight line and the normal direction of the stage surface
Is less than the sputtered particle emission angle and
Stage at a position within the range of the emission angle of the particle
And the relative position between the cylindrical side wall and the cylindrical side wall can be set . The driving unit drives the cylindrical side wall with respect to the fixed stage to change the relative position between the stage and the cylindrical side wall, or drives the stage with respect to the fixed cylindrical side wall. This makes the relative position between the stage and the cylindrical side wall variable.

The method of the present invention is also directed to a film forming method for forming a film on a substrate surface, wherein a relative position between the substrate and a cylindrical side wall surrounding the periphery of the substrate is changed so that an incident area of particles for film formation is changed. The method is characterized in that the critical position of the film formation region at the edge of the substrate is adjusted by controlling.

According to the present invention, the cylindrical side wall surrounding the stage on which the substrate is placed can change its relative position with respect to the substrate.
By controlling the incident area of the particles for film formation, it is possible to form a laminated film composed of films having different film formation areas at the edge of the substrate by the same film forming apparatus.

[0016]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention and the method of the present invention will be described below with reference to FIGS. In this example, a case where a stacked film including a titanium film and a titanium nitride film is formed by a sputtering method on a substrate in which the contact hole illustrated in FIG. 4 is formed will be described.

The sputtering apparatus (film forming apparatus) has the same basic configuration as a general DC magnetron type. As shown in FIG. 1, a vacuum chamber 20 formed in a vacuum chamber and a A stage 5 installed below the vacuum chamber 20, a cylindrical side wall 4 provided so as to surround the periphery of the stage 5, and a titanium target 2 disposed above the vacuum chamber so as to face the stage 5. And a cathode magnet 1 disposed above the titanium target 2. The stage 5 is for mounting a substrate (silicon wafer) 3 on which a film is to be formed. The stage 5 of this sputtering apparatus is provided with the substrate 3 having fine holes such as contact holes on the surface. It is placed so as to face 2.

A sputtering gas is introduced into the vacuum chamber from an inlet (not shown), and a magnetron discharge is generated by a high frequency-DC coupling bias to ionize the sputtering gas. The ionized sputtering gas is accelerated by the cathode magnet 1. Then, the titanium target 2 is sputtered to strike out titanium particles, and the target particles are deposited on the surface of the substrate 3 arranged on the stage 5 to form a thin film.

On the back side of the stage 5, a movable support 6 as a driving means for changing the distance from the titanium target 2 is mounted. By making the distance variable, the relative position between the stage 5 and the cylindrical side wall 4 in the axial direction of the cylindrical side wall 4 can be changed. The movable support 6 is configured such that the length of the support changes (extends and contracts), and a movable mechanism that uses air pressure such as a compressor, for example, is optimal with little vibration. The movable support 6 and the stage 5
By covering the connecting portion with the bellows-shaped pipe 21, the support can be expanded and contracted without breaking the vacuum in the vacuum chamber 20.

According to this sputtering apparatus, both the titanium film and the titanium nitride film can be formed on the substrate 3, and the stage 5 and the upper end of the cylindrical side wall 4 are moved by the expansion and contraction of the movable support 6. By changing the relative position,
When forming each film, the film is formed by adjusting the critical position of the film formation region at the wafer end 8 of the substrate 3. That is, FIG.
4A shows the relative position between the stage 5 and the cylindrical side wall 4 in the sputtering apparatus when the titanium film 7 is formed, and the wafer end 8.
FIG. 1B shows the relative position between the stage 5 and the cylindrical side wall 4 in the sputtering apparatus when the titanium nitride film 9 was formed, and the titanium at the wafer end 8. The film formation region of the film 9 is shown.

Next, a method of forming the titanium film 7 and the titanium nitride film 9 as barrier metals for growing the blanket W, which are laminated using the above-described sputtering apparatus, will be described. First, the formation of a titanium film will be described. The substrate 3 on which the contact holes as shown in FIG. 4A are formed is transferred to the stage 5 of the sputtering apparatus, and the height of the movable support 6 is adjusted by the movable mechanism.
The stage 5 is located at a position where the stage 5 is stored in the cylindrical side wall 4 as shown in FIG. Then, a titanium film 7 is formed in an argon gas atmosphere. The correction value of the thickness of the titanium film 7 varies depending on the aspect ratio of the contact hole formed in the substrate 3 (hole depth / diameter of the upper portion of the hole), but if the aspect ratio is 1.5, about 600 Å is appropriate. is there.

When a film is formed at the stage position shown in FIG. 1A, a titanium film 7 is formed on the surface of the wafer end 8.
It is not formed on the side wall of the wafer. However, it is necessary to pay attention to the relative height between the cylindrical side wall 4 and the substrate 3 here. That is, since sputtered particles are generally emitted with an emission angle distribution determined by the orientation of the target, they are emitted intensively in a specific direction. When this angle is defined as θ (emission angle) with respect to the direction perpendicular to the target surface,
As shown in FIG. 2, the sputtered particles are mainly emitted at an angle θ, and the upper end of the cylindrical side wall 4 is sufficiently higher than the substrate 3 by changing the relative position between the cylindrical side wall 4 and the substrate 3. (The upper end of the cylindrical side wall 4 is too high) (FIG. 2)
2 (a)) and the case where the upper end of the cylindrical side wall 4 is slightly higher than the substrate 3 (the upper end of the cylindrical side wall 4 is too low) (FIG. 2 (b)). The critical position of the effective area of the film changes. This effective area is defined as an area in which a film thickness using a sputtering apparatus is at least the minimum thickness required by the semiconductor device.

That is, as shown in FIG. 2A, when the relative position of the cylindrical side wall 4 with respect to the substrate 3 is too high, the critical position of the effective area moves to the inside of the substrate.
Thus, the effective area of the titanium film 7 is reduced. The sputtered particles are slightly incident on the wafer from angles other than the angle θ, and are also incident from the opposite end of the wafer. Wafer edge 8
If only attention is paid to the above, the film thickness required for forming the semiconductor device can be secured by increasing the film formation amount. However, the difference from the central portion of the wafer is increased, and the uniformity of the titanium film over the entire surface of the wafer is deteriorated. Further, when the upper end of the cylindrical side wall 4 is further positioned higher than the substrate 3, the titanium film 7 is hardly formed at the wafer end 8.

On the other hand, as shown in FIG. 2B, when the relative position of the cylindrical side wall 4 with respect to the substrate 3 is too low, the critical position of the effective region moves to the outside of the substrate, so that the effective region of the titanium film 7 becomes It is secured sufficiently wide. However, since the region where the titanium film 7 is formed extends to the side wall of the wafer end 8, there is a possibility that the titanium film 7 cannot be covered with the titanium nitride film 9 formed in a later step and is exposed. As described above, when the blanket W is grown in a state where the titanium film 7 is exposed, a problem occurs that the film is peeled off.

Therefore, the relative height of the cylindrical side wall 4 with respect to the substrate 3 is determined in consideration of the emission angle distribution of the sputtered particles emitted from the titanium target 2 and the effective area required at the wafer end 8. There must be. For example, a generally widely used emission angle θ of 36 ° <
200> using a titanium target having orientation, the gap B between the cylindrical side wall 4 and the substrate 3 is 2 mm, and the non-effective area A
Is set to 1 mm from the wafer end 8, the relative height (shield height) C of the upper end of the cylindrical side wall 4 with respect to the substrate 3 is represented by (B + A) Ａtan36 °, and the value is 4.13.
mm. Here, the edge of the effective area (critical position)
Is a position on the wafer extending from the upper end of the cylindrical side wall 4 at an angle θ. In addition, in the case of a normal wafer, a taper of about 1 mm is provided on the end face side of the wafer so that particles are not generated due to rubbing with a carrier or the like. Is equivalent to

The above calculation results are theoretically the values of the shield height C. However, in an actual sputtering apparatus, the relationship between the cylindrical side wall 4 and the substrate 3 may be slightly deviated from the designed arrangement. In addition, sputtered particles enter from any angle other than the emission angle θ. With these,
Considering that the actual effective area is wider than the effective area defined above, the above calculation result is used as a guide to
It is appropriate to position the upper end of the cylindrical side wall 4 at the shield height C increased by about 2 mm so that the titanium film 7 does not adhere to the side wall of the wafer end 8.

Next, the formation of the titanium nitride film 9 will be described. After the titanium film 7 is formed at the position of the appropriate shield height by the sputtering apparatus shown in FIG. 1A, the substrate 3 is transferred to another sputtering apparatus having the same structure without breaking the vacuum. Then, the height of the movable support 6 is adjusted by the driving means, and FIG.
As shown in (b), the stage 5 is set so that the substrate 3 is located above the upper end of the cylindrical side wall 4, and the titanium nitride film 9 is reactively sputtered in a mixed atmosphere of argon gas and nitrogen gas. To form a film. The thickness of the titanium nitride film 9 is
The correction value differs depending on the aspect ratio (hole depth / diameter of the hole upper portion) of the contact hole formed in the above, but if the aspect ratio is 1.5, about 100 Å is appropriate.

In the relative position between the substrate and the cylindrical side wall 4 in this sputtering apparatus, the solid angle of the side wall of the wafer end 8 as viewed from the titanium target 2 is not zero. Therefore, the titanium nitride film 9 can be formed up to the side wall of the wafer end 8, and the titanium nitride film 9 can completely cover the titanium film 7 formed earlier on the wafer end 8. As a result, since the titanium film 7 is not exposed, the film does not peel even if the blanket W is grown in a subsequent step.

After forming a laminated film composed of the titanium film 7 and the titanium nitride film 8 described above, and processing about 100 substrates with respect to the number of substrates in each sputtering apparatus, the nitride film is formed by the apparatus in which the titanium film is formed first. A titanium film is formed, and a titanium film is formed using a device in which a titanium nitride film is formed. At this time, as described above, it is necessary to switch the stage position between titanium film formation (FIG. 1A) and titanium nitride film formation (FIG. 1B). As described above, the formation of the titanium film and the titanium nitride film is performed alternately for each predetermined number of substrates by the sputtering apparatus, so that the titanium paste is necessarily formed in the apparatus used for forming the titanium nitride film. Therefore, there is no need to periodically perform the titanium paste that does not contribute to mass production and lowers the operation rate of the sputtering apparatus. In addition, since waste of the target due to the titanium paste can be avoided, the productivity and manufacturing yield of the semiconductor device can be improved.

In the above-described example, the case where the titanium film 7 and the titanium nitride film 9 are formed by different sputtering apparatuses has been described, but they can be formed in the same apparatus. In this case, after the substrate is transferred into the sputtering apparatus, the height of the movable support 6 is set so that the titanium film 7 does not adhere to the side wall of the wafer end 8 on the stage 5 as shown in FIG. To adjust. After the titanium film 7 is formed, the height of the movable support 6 is adjusted again so that the substrate 3 is positioned above the upper end of the cylindrical side wall 4 and the stage 5 is moved. Form a film.

According to this example, a laminated film composed of a titanium film and a titanium nitride film is formed in the same sputtering apparatus. However, by adjusting the height of the stage position, the titanium film is formed on the side wall of the wafer end. Is prevented from being exposed, and film peeling does not occur even if a blanket W grows on the laminated film in a later step. Further, since titanium sputtering is performed for each substrate, there is no need for a titanium paste. Therefore, even when continuous film formation is performed in the same device, the productivity and manufacturing yield of the semiconductor device can be improved.

In the structure of the above sputtering apparatus, the stage 5 on which the cylindrical side wall 4 is fixed and the substrate 3 is placed is moved to the movable support 6 in order to change the relative position between the cylindrical side wall 4 and the substrate 3. However, the height of the shield may be made variable by a mechanism that changes the height of the stage 5 itself, a mechanism that fixes the stage 5 and moves the cylindrical side wall 4 up and down, or the like. That is, any mechanism may be employed as long as the relative position between the cylindrical side wall 4 and the substrate 3 is variable.

In the above example, it has been described that the present invention is effective for forming a barrier film in which a titanium film and a titanium nitride film are sequentially laminated on a substrate in which a contact hole is formed.
The present invention is not limited to the lamination of a titanium film and a titanium nitride film, and is suitable for a case where two types of films need to be formed such that a lower film is covered with an upper film at a substrate end.

In the above-described film forming method, a normal sputtering method has been described as an example. The film forming apparatus of the present invention in which films with different film forming regions are formed by changing the area of the effective film forming region at the substrate end can be applied.

According to the above-described film forming apparatus and film forming method,
A stage on which a substrate is mounted is provided with a cylindrical side wall surrounding the periphery, and a relative position between the substrate and the upper end of the cylindrical side wall is changed to deposit a sputtered particle discharged from the titanium target 2 on the stage. By adjusting the critical position of the effective film formation region at the end, the area of the effective film formation region can be changed.

Therefore, if this film forming apparatus is applied to the formation of a laminated film of a titanium film and a titanium nitride film, which are barrier metals for the blanket W, the titanium film is made to have a different film forming area by the titanium film. Since the film can be formed in a film formation region smaller than the film and can be formed so that the titanium film is completely covered with the titanium nitride film, film peeling does not occur at the time of W growth in a subsequent step. In addition, since the titanium film and the titanium nitride film can be formed in a sputtering apparatus having the same structure, there is no need to periodically perform a titanium paste that does not contribute to mass production and lowers the operation rate of the sputtering apparatus. Can also be avoided. As a result, it is possible to improve the productivity and the manufacturing yield of the semiconductor device.

[0037]

According to the present invention, a stage on which a substrate is mounted is provided with a cylindrical side wall surrounding the stage, and the relative position between the cylindrical side wall and the substrate is changed to thereby form a plurality of films. When the film is formed, since the area of the effective film formation area is changed by controlling the incident area of the particles for film formation at the edge of the substrate, the formation of the laminated film in which the film formation areas are different from each other has the same structure. Can be performed in the film forming apparatus.

[Brief description of the drawings]

FIG. 1 is an explanatory diagram of a configuration of a sputtering apparatus and an enlarged view of a film formation region at a wafer end, showing an example of an embodiment of the present invention;
(A) is a diagram corresponding to titanium film formation, and (b) is a diagram corresponding to titanium nitride film formation.

FIGS. 2A and 2B are an explanatory view of a configuration of a sputtering apparatus and an enlarged view of a film forming area at a wafer end for explaining a relationship between an effective area at a substrate end and a shield height in the sputtering apparatus, and FIG. (B) shows a case where the shield height is low, and (b) shows a case where the shield height is low.

FIG. 3 is a layout explanatory view showing a positional relationship between a substrate and a cylindrical side wall for explaining a method of determining a shield height.

4 (a) to 4 (c) are cross-sectional views illustrating a process of forming a general blanket tungsten on a substrate in which a contact hole is formed.

5A and 5B are an explanatory view of a structure of a conventional sputtering apparatus and an enlarged view of a film formation region at a wafer end, wherein FIG.
(B) shows an apparatus for a titanium nitride film.

FIG. 6 is an explanatory view of a structure of a conventional sputtering apparatus and an enlarged view of a film forming area at a wafer end. FIG. 6 (a) shows a case where a titanium film and a titanium nitride film are formed by the same apparatus. And (b) show the case where a titanium nitride film is formed.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Cathode magnet 2 Titanium target 3 Substrate 4 Cylindrical side wall 5 Sledge 6 Movable support (drive means) 7 Titanium film 8 Wafer end 9 Titanium nitride film

Continuation of the front page (58) Field surveyed (Int. Cl. ⁷ , DB name) C23C 14/00-14/58 C23C 16/00-16/56 H01L 21/203-21/205 H01L 21/31 H01L 21 / 285 H01L 21/768

Claims (2)

(57) [Claims] 1. A film forming apparatus for forming a film on a substrate surface, a stage on which the substrate is mounted, a cylindrical side wall surrounding the stage, and the stage and the cylindrical side wall in an axial direction of the cylindrical side wall. And a driving means for changing the relative position of the stage and the shortest connecting the upper end of the cylindrical side wall and the outer periphery of the stage.
The angle between the straight line and the normal direction of the stage
Position and the sputtered particle
The stage and the cylinder at a position that is in a range equal to or greater than the emission angle.
A film forming apparatus characterized in that a relative position with respect to a side wall can be set . 2. A film forming method for forming a film on a substrate surface, comprising: changing a relative position between the substrate and a cylindrical side wall surrounding the periphery of the substrate to control an incident area of particles for film formation; Adjusting a critical position of a film formation region at an end of the film formation method.