JP3113674B2 - Charged beam processing method and apparatus - Google Patents

Description

The present invention relates to a microfabrication method using a charged beam and a reaction processing gas, and is particularly suitable for improving the reliability of cutting and connection of a multilayer device. The present invention relates to a charged beam processing method using a mixed gas and an apparatus therefor.

[Conventional technology]

According to the microfabrication using a focused ion beam, the wiring of the LSI can be cut or an arbitrary part can be connected for the purpose of debugging a semiconductor device such as an LSI or analyzing a failure in a manufacturing process.

As the conventional focused ion beam processing method, the following two typical methods are known. The first processing method is sputtering processing in which sample atoms are hit by an irradiation ion beam, and fine processing is possible by reducing the diameter of the irradiation ion beam. Related to this type of ion beam processing method is, for example, focused ion beam microprocessing for electronics “Focused Ion Be
am Microsurgery for Electronics "
EEE Electron Device Letters EDL, Volume 7, Issue 5 (1986) [IEEE E
LECTRON DEVICE LETTERS, VOL.EDL-7, NO.5, MAY (198
6)].

The second processing method is a method of processing a sample by chemical reactive etching using a combination of a focused ion beam, a reaction processing gas, and radicals, instead of sputtering, and an example thereof is disclosed in, for example, JP-A-64-42822. Publication.

[Problems to be solved by the invention]

At present, in semiconductor devices such as LSIs, multilayering of wirings and elements is progressing in order to promote higher integration and higher functionality. For this reason, in the sputtering process in which the sample ions are hit by the irradiation ion beam, which is the first processing dimension of the above-described conventional technology, when cutting the lower wiring covered with the upper wiring, a through hole is made in the upper wiring and the lower wiring is formed. The sample atoms that have been knocked out from the lower wiring are reattached for cutting,
Since a problem occurs in that the upper wiring and the lower wiring are short-circuited, it is necessary to take measures such as making the through-hole diameter of the upper wiring large. As a result, the processing time becomes longer than necessary to increase the diameter of the through hole, and the processing steps become complicated. In addition, the resistance value of the wiring portion increases, and the reliability decreases.

On the other hand, in the second processing method in which the chemically reactive etching is performed using the focused ion beam and the reaction processing gas, the sample atoms re-attach to the processing portion side wall as in the sputter processing because the etching involves a chemical reaction. There is nothing. However, in this method, CVD is applied to the lower wiring covered by the upper wiring.
In order to connect the wiring (to form the conductors for extracting the electrodes by CVD), open a through hole in the upper wiring to expose the lower wiring, and pull out the wiring from the lower wiring to the LSI surface. Since the cross-section is exposed, there is also a problem that the CVD wiring is connected there.

Also, like a multilayer device, for example, an Al wiring layer and a SiO ₂ layer,
When interlayer insulating films such as Si ₃ N ₄ layers are repeatedly overlapped, the reaction processing gas must be switched over and over according to the material of the material to be processed, and the processing gas is once exhausted, There is a problem that the entire process time becomes longer due to switching such as supplying another reaction processing gas. There are also problems such as troublesome gas switching and reproducibility.

Therefore, an object of the present invention is to solve the above-mentioned conventional problems, and a first object of the present invention is to perform highly reliable processing even on a complicated element, and to perform the entire processing in a short time. It is an object of the present invention to provide a charged beam processing method and a second object of the present invention.

[Means for solving the problem]

The first object is to irradiate a focused charged beam onto a workpiece in an atmosphere of a reaction processing gas containing an etching gas and a deposition gas, and to locally perform reactive etching at an irradiation portion of the focused charged beam. A method of performing the method, wherein a deposition gas for depositing an insulator in the reaction processing gas atmosphere is mixed with a reactive etching gas and supplied, and etching is performed by utilizing a difference in a reaction rate between the etching reaction and the deposition reaction. A charged beam processing method according to a first aspect of the present invention is characterized in that an insulating film is selectively formed on a side wall portion of a formed hole.

A second invention of a charged beam processing method is characterized in that, when a plurality of layers of workpieces of different materials are etched, an etching reaction processing gas optimal for each material is mixed and supplied. Is achieved by

In addition, as a method of mixing the reaction processing gases and controlling a mixing ratio of each reaction processing gas, a method of controlling a mixing ratio by changing a flow rate by a mass flow, a method of temporarily storing the reaction processing gas in a buffer chamber, The mixture is supplied to the workpiece by a method of controlling the mixing ratio by the pressure ratio in the buffer chamber, or by spraying onto the workpiece from a plurality of nozzles according to the type of gas, and controlling the amount of the spray by a flow control valve. There is a method of controlling the mixture ratio of the processing gas.

The second object is to provide a beam source for generating a charged beam such as an ion beam or an electron beam, a focusing optical system, a stage, a secondary particle detector, an electron shower, a reaction processing gas supply means, and a controller for driving them. A charged beam processing apparatus configured to irradiate a charged beam focused by the focusing optical system on a workpiece in a reaction processing gas atmosphere, and locally perform a reactive process at an irradiation unit of the focused charged beam. As the processing proceeds, a plurality of reaction processing gases including an etching gas and a deposition gas (CVD gas) are mixed into the reaction processing gas supply means, and the mixing ratio of each reaction processing gas is controlled. This is achieved by a third invention of a charged beam processing apparatus provided with a supply unit.

[Action]

In the method for performing fine processing of a multilayer device by mixing a reaction processing gas for etching and a reaction processing gas for depositing an insulating film (or a conductor as necessary) by CVD according to the first aspect of the present invention, an ion beam is incident. By using the fact that the reaction rates of etching and CVD change depending on the angle, and by controlling the mixing ratio of the reaction processing gas, on the one hand, while forming a processing hole, on the other hand, the insulating layer ( Alternatively, a conductor can be formed if necessary.

Next, in the method of etching a multi-layer film having a different material by mixing a plurality of etching gases according to the second aspect of the present invention, the reaction processing gas does not need to be switched continuously even if the material of the specific workpiece changes according to the processing. Etching can be performed, and processing time can be reduced.

Next, in any of the above inventions, in the method of controlling the mixing ratio of a plurality of reaction processing gases, and in the method of controlling the mixing ratio by mass flow, the flow rate ratio of each reaction processing gas is controlled by mass flow, and the flow rate is controlled. The mixture ratio can be controlled by mixing the controlled reaction processing gas and spraying it onto the workpiece from the nozzle.

In the method of controlling the mixing ratio using the buffer chamber, the reaction processing gas is temporarily stored in the buffer chamber, so that the mixing ratio can be controlled by the pressure ratio of each reaction processing gas in the buffer chamber.

Further, in the method of spraying a workpiece from a plurality of nozzles, the flow rate of each reaction processing gas is controlled by the pressure in the buffer chamber and the conductance of a flow rate control valve, and the spraying is performed on the workpiece from each nozzle. By mixing around the workpiece, the mixing ratio can be controlled.

〔Example〕

 An embodiment of the present invention will be described below with reference to the drawings.

First Embodiment FIG. 1 is a schematic block diagram schematically showing the configuration of an entire apparatus for explaining an example of a charged beam processing method and a processing apparatus according to the present invention.

Almost the same processing can be performed using an ion beam or an electron beam as the charged beam. Here, an example using a focused ion beam is shown as a typical example.

In the figure, an extraction electrode 3 for extracting an ion beam 2 from an ion source 1 and a focusing lens 4 for converging the extracted ion beam 2 are provided in an ion beam (hereinafter abbreviated as IB) chamber 15. An aperture 5, a blanking electrode 6 for turning on and off the ion beam 2,
An aperture 7 also serving as a mask for blanking,
There is a focused ion beam optical system comprising a deflector electrode 8 for deflecting the ion beam, and these are controlled by an ion beam controller 29.

Further, a through hole is provided at the bottom of the IB chamber 15 to allow the ion beam 2 to pass therethrough and to prevent the reaction processing gas from flowing into the IB chamber 15.

The main chamber 16 includes a stage 13 on which a sample 12 to be processed is mounted, a nozzle 11 for spraying a reaction processing gas onto the sample 12, and detection of secondary particles generated from the sample 12 upon irradiation with the ion beam 2. A secondary particle detector 10 and an electron shower 9 for neutralizing the positive charge of the ion beam accumulated on the surface of the sample 12 are provided. When an electron beam is used instead of the ion beam 2 as the charged beam, the electron shower 9 can be omitted.

Here, the stage 13 has a heater for heating the sample 12.
14 is built in and connected to a temperature controller 32. The nozzle 11 is connected to gas cylinders 26, 27, 28 containing reaction processing gas via valves 17, 18, 19, mass flows 20, 21, 22, and valves 23, 24, 25. The flow rate of the reaction processing gas can be controlled. The electron shower 9 for preventing charge-up of the sample is controlled by an electron shower controller 30 to control the amount of electrons to be supplied. In the secondary particle detector 10, a secondary particle image is obtained by the secondary particle detector controller 31, and the state of the processed surface of the sample can be directly observed. These controllers are connected to a computer 34, and are configured so that each element can be operated in conjunction with each other.

Next, the principle of the method of simultaneously performing the reactive etching and the assist deposition (hereinafter simply referred to as deposition) according to the present invention in the same chamber will be described with reference to FIGS.

First, the relationship between the reactive etching rate and deposition rate with angle theta _I incident ions in Figure 2.
Reactive etching has a peak at around 50 ° incident angle theta _I ion, rapidly speed decreases at higher angles of incidence. Deposition contrast the incident angle θ _a of the ions is about
It peaks around 70 ゜. As described above, a difference occurs in the reaction rate between the etching and the deposition depending on the incident angle of the ions. Therefore, if the reactive etching gas and the deposition gas are mixed and the difference between the two reaction rates is used, the processing bottom surface is processed. In this case, the reactive etching is mainly performed, and the deposition proceeds mainly on the side wall of the concave portion generated by the etching.Therefore, by controlling the gas mixture ratio of both, etching is performed on one side, and on the other hand, on the side wall of the processed hole. Film formation can be performed.

The actual processing method will be described with reference to FIG. 3. First, as shown in FIG. 3A, the ion beam 2 is irradiated while the reactive etching gas 36 for the workpiece 35 is blown onto the workpiece 35. I do. At this time, the inclination angle of the side wall of the etched hole is determined by the scanning speed of the ion beam 2, so that the deposition θ described in FIG.
The ion beam 2 is scanned so that

Next, as shown in FIG. 4B, the mixture ratio of the deposition gas 37 and the reactive etching gas 36 is controlled by mass flow, and the mixture is blown to decompose the deposition gas 37 on the side wall of the processing hole. Etching proceeds while the formed film 38 is formed.

Finally, as shown in FIG. 3C, after etching to a desired processing depth, the supply of the deposition gas 37 is stopped, and the bottom of the processing hole is etched to form a film only on the side wall.
38 films can be formed.

Next, an example of a control process at the time of processing a multilayer element using the apparatus of this embodiment and the operation of each unit will be described with reference to FIGS.
This will be described with reference to the drawings.

As shown in FIG. 4 (a), the sample 12 used was an LSI constituting a multilayer wiring structure in which Al wiring was alternately laminated as a wiring conductor layer and SiO ₂ was alternately laminated as an interlayer insulating film.

The inside of the main chamber 16 in which the sample 12 is set is evacuated to a high vacuum by a vacuum exhaust device (not shown). Thereafter, while irradiating the sample 12 with the ion beam 2 and simultaneously supplying electrons from the electron shower 9, secondary ions generated from the sample 12 are detected by the secondary particle detector 10 and a scanning ion microscope image (hereinafter, referred to as “scanning ion microscope image”). Obtain and observe a SIM image), move the stage 13, and set the processing position and processing area of the sample 12. After that, first, the valves 17 and 23 are opened, and while controlling the flow rate by the mass flow 20, the reactive etching gas of SiO ₂ contained in the cylinder 26 is sprayed from the nozzle 11 onto the sample 12, thereby performing the chemical reactive etching. Here, as the reactive etching gas for processing the sample SiO ₂ , mainly a fluorine-based gas (CF ₄ , CHF ₃ , C ₃ F ₈ , XeF _2, etc.) is preferable, and in this embodiment, XeF ₂ is used. An example will be described in which the method is used. In this etching process, the ion beam 2 is scanned such that the inclination angle of the side wall portion of the processed portion is an angle θa at which the deposition speed is faster than the etching speed.

Next, as shown in FIG. 4 (b), when the etching has progressed to a certain depth, the valves 18 and 24 are opened and the insulating film (Si
The flow rate of Si (OC ₂ H ₅ ) ₄ as a CVD gas for depositing O ₂ ) is controlled by a mass flow 21, mixed with XeF _2, and sprayed onto a sample 12 from a nozzle 11. As a result, etching proceeds on the bottom surface of the processed portion, and deposition is performed on the side wall portion, and the insulating film 39 is formed.

Next, as shown in FIG. 4 (c), at the Al wiring layer, the reactive etching gas of the Al is mixed with another processing gas and supplied. Here, the reactive etching gas of Al is mainly a chlorine-based gas (Cl ₂ , CCl ₄ , BCl ₄ , SiCl _4, etc.).
Is suitable. Here, the case where Cl ₂ is used will be described as an example. Open valves 19 and 25, control Cl ₂ flow rate by mass flow 22, mix with other two gases, and sample from nozzle 11.
Spray on 12 While simultaneously etching the Al wiring layer of the processed portion and the insulating film formed on the processed bottom surface by the deposition, the insulating film 39 can be formed on the side wall portion by the deposition. After detecting the processing end of the wiring layer by the SIM image or the processing speed obtained in advance by experiment, the valve 19,
25 is closed and the supply of Cl ₂ is stopped.

Then, as shown in FIG. 4 (e), the SiO ₂ is etched, and when the lower wiring is exposed, the Si (OC ₂ H ₅ )
Stop supply of ₄ . Finally, only XeF ₂ is used to completely expose the lower wiring so that the insulating film does not remain on the surface. At this time, by controlling the mixing ratio of each processing gas as shown in FIG. 5, an insulating film can be formed on the side wall of the processed hole while performing etching. That is, the horizontal axis of FIG. 5 indicates the material in the processing depth direction from the sample surface, and the vertical axis indicates the gas composition ratio.

Thereafter, as shown in FIG. 4 (f), a laser beam 40 is irradiated in a CVD gas atmosphere by a known apparatus such as a laser CVD method using another apparatus to form a CVD wiring 41. The CVD wiring 41 can be pulled out of the wiring without short-circuiting with the upper wiring.

Note that, instead of forming an insulating film on the side wall of the processed hole, a conductive metal can be formed by using a CVD gas capable of depositing a conductor. The film forming method in this case is the same as in the above embodiment.

Embodiment 2. Next, in the above embodiment, an assist deposition method was used as a film forming method. However, another method using a thermal CVD method was used to prevent a pseudo bipolar transistor operation called latch-up of a CMOS circuit. An example in which an element isolation groove is formed will be described with reference to FIGS.

FIG. 6 shows the relationship between the incident angle of ions and the reaction speed.
As described above in Example 1, in reactive etching, there is a difference in the reaction speed depending on the incident angle of ions.
In D, the reaction speed is always constant irrespective of the angle of incidence of ions. Therefore, by selecting the inclination angle of the side wall of the concave portion by the etching process such that the reaction rawness of the thermal CVD is faster than that of the reactive etching, the etching can be similarly performed while forming the film on the side wall.

Therefore, as shown in FIG. 7, which is an enlarged view of a main part of the apparatus shown in FIG.
Heated to about 300 ° C. by heater 14 assembled to 13. Then, reactive etching is locally performed at the irradiation part of the ion beam 2 while blowing XeF ₂ as an Si etching gas onto the Si substrate. At the same time, for example, SiH ₄ + O ₂ gas is mixed with XeF ₂ and sprayed as a CVD gas for depositing the SiO ₂ film.
The mixed gas of SiH ₄ + O ₂ is thermally decomposed to deposit an SiO ₂ film 42, and the reactive etching is faster on the bottom of the processed portion, so that no SiO ₂ film is formed, but the SiO ₂ film 42 is formed on the side wall. You. And after etching to a desired depth, SiO ₂ film 4 only in CVD gas stopping the supply of the etching gas to processing hole bottom
Form 2. Thereafter, as shown in FIG. 8, a CMOS circuit is formed by a well-known process to enable element isolation.

Further, by using the method of the first and second embodiments, the formation of the trench of the trench capacitor can be simultaneously performed by applying the formation of the element isolation groove of FIG. That is, the inside of the concave portion of the sample in which the surface of the processed concave portion obtained through the final step of FIG. 7 was covered with the SiO ₂ film 42 was filled with a conductor such as poly-Si by CVD, and this was used as one electrode. If the SiO ₂ film 42 is used as a dielectric and the substrate side is used as the other electrode, a trench capacitor can be realized.

Example 3 This example shows an example in which a plurality of etching gases corresponding to different materials are mixed, and a laminated sample of different materials is etched sequentially with good efficiency. This will be described with reference to FIG.

When observing a cross section of a semiconductor element by SEM or the like for the purpose of LSI failure analysis or the like, it is necessary to largely etch the front of the cross section to be observed as shown in FIG. For comparison, FIG. 10 shows a case where a conventional reactive etching method was used.

As shown in FIG. 10 (a), XeF _{2 is used} as a fluorine-based gas to chemically etch the uppermost SiO ₂ film 47.
Reactive etching is locally performed at the irradiation part of the ion beam 2 while spraying. However, when the etching of the SiO ₂ film proceeds and the Al wiring 44 is exposed, since the reactivity between XeF ₄ and Al is low, the etching hardly progresses, the Al wiring 44 remains, and only the surrounding SiO ₂ film 47 remains. Is selectively etched. Therefore, as shown in FIG. 10B, XeF ₂ is once evacuated, and the Al wiring 44 is etched while blowing Cl-based Cl ₂ as a reactive etching gas for Al. However, also in this case, when the Al wiring 44 is etched and the surface of the SiO ₂ film 47 is exposed, the etching rate is slowed down.
₂ is evacuated once, and XeF ₂ is introduced to etch the SiO ₂ film 47. This operation is repeated to etch to a desired depth as shown in FIG. In the conventional reactive etching method, when films of different materials such as Al and SiO ₂ are formed in a complicated manner, the exchange of the processing gas increases, and the time required for the entire process of processing increases. Also,
Since the level difference occurs in the etching shape of the SiO ₂ film 47 as shown in FIG. 10 (b), the step amount corresponding etching time of the SiO ₂ film 47 it takes extra.

The above is the description of the comparative example. Next, the case where the same processing as in FIG. 10 is performed using the processing method of the embodiment of the present invention will be described.
This will be described with reference to FIG.

First, as shown in FIG. 11A, the SiO ₂ film 47 and the Al wiring
XeF ₂ and Cl ₂ so that the etching rates of 44 to 46 are the same.
Irradiation with the ion beam 2 is performed while controlling and mixing the mixture to perform reactive etching. As a result, as shown in FIGS. 11 (b) and 11 (c), the etching always proceeds at the same processing depth, so that there is no step in the processing of the SiO ₂ film and the processing gas needs to be replaced. Since the etching is carried out continuously without any processing, the entire processing time of the processing can be reduced.

Also, when the respective reactive etching gases corresponding to different materials are mixed, the difference between the reactive etching rates of the respective materials is large, and when the etching rates cannot be made the same by the mixing ratio of the etching gases, The etching rate can be adjusted by, for example, mixing a reactive etching gas with a higher etching rate with a buffer gas (for example, Cl ₂ and O ₂ ) for suppressing the reaction rate.

Example 4 This example describes a modification in which a plurality of reaction gases are mixed and supplied, and FIG. 12 is a configuration diagram showing a main part of the apparatus.

In the same figure, cylinders 26, 27,
At the end of 28, there are valves 17, 18, 19 via valves 23, 24, 25, and sub-buffer chambers 50, 51, 52, respectively, and the nozzle 11 via buffer chamber 49, flow control valve 48, A reaction processing gas is sprayed on the sample 12. Here, as a method of changing the mixing ratio of the processing gas, the reaction processing gas is introduced into each sub-buffer chamber to a desired pressure, and then the valves 17, 18, and 19 are opened, and the sub-buffer is introduced into the buffer chamber 49. A method of controlling by a pressure ratio by introducing a reaction processing gas from the chambers 50, 51, 52 is adopted. Then, the flow rate of the mixed processing gas is adjusted to a desired value by the conductance of the flow rate adjustment valve 48 and is sprayed onto the sample 12 from the nozzle 11. Also,
When changing the mixing ratio of the reaction processing gas, the inside of the buffer chamber 49, the sub-buffer chambers 50, 51, and 52 is evacuated to vacuum through an exhaust pipe (not shown), and the reaction processing gas is introduced again into the sub-buffer chamber. By controlling the pressure, the mixing ratio can be controlled.

Embodiment 5 FIG. 13 shows an example of gas mixing according to another embodiment of the present invention, which will be described below with reference to the drawings.

In the figure, buffer chambers 59, 60, 61 are connected to cylinders 26, 27, 28 containing processing gas via valves 23, 24, 25.
Are connected, and through the flow control valves 56, 57, 58,
Each of the nozzles 53, 54, 55 is connected. Here, the reaction processing gas is blown from the nozzle onto the sample 12 at a desired flow rate by the pressure in the buffer chamber and the conductance of the flow control valve, and the reaction processing gas is mixed on the sample 12. The mixing ratio of the processing gas can be controlled by adjusting the pressure in each buffer chamber and the conductance of the flow control valve.

Embodiment 6 This embodiment also shows an example of gas mixing according to another embodiment of the present invention, which will be described below with reference to FIG.

In the figure, a small-sized sample chamber 62 is provided on the stage 13 to expose the sample 12 to the mixed reaction processing gas. A plurality of processing gas cylinders 26, 27, 28 are connected to the valve 23,
24, 25 and mass flow 20, 21, 22 and valves 17, 18, 19, 65
Is connected to the sample chamber 62 via the. Sample chamber
62 is connected to an exhaust device (not shown) via an exhaust pipe 66 and a valve 67, and the supply amount of the processing gas and the processing gas supplied by the valve 67 are adjusted so that the pressures of the plurality of processing gases introduced into the sample chamber 62 become constant. Adjust so that the pumping speed is balanced. Also,
In order to obtain a secondary particle image for observing the sample when performing processing position alignment or the like, the secondary particle detector 68 is connected to the sample chamber 62.
It is provided inside. Since the sample 12 moves together with the stage 13, the sample chamber 62 and the stage 13 are connected by a sliding seal 63 such as an O-ring. Thereby, the processing gas can be sealed in the sample chamber 62 and the stage 13 can be moved. The flow rate of the processing gas is controlled by each mass flow, and is introduced into the sample chamber 62 and mixed. Then, the introduced reaction processing gas is exhausted through the exhaust pipe 66 while adjusting the amount to be exhausted by the valve 67, and the supply amount of the reaction processing gas is kept constant. The mixing ratio of the reaction processing gas can be easily controlled by changing the flow rate of the reaction processing gas according to each mass flow.

Note that, in Examples 4 to 6, the configuration is the same as that in Example 1 except for mixing a plurality of reaction processing gases and controlling and supplying a mixing ratio of each reaction processing gas.
Description is omitted.

〔The invention's effect〕

According to the present invention, a desired film such as an insulating film can be selectively formed on a side wall of a processed concave portion at the same time as etching when processing a multi-layer device with a charged beam irradiation and a plurality of reaction gas mixed systems. In addition, the reliability of cutting the wiring and the like can be improved. Further, the time required for the entire processing can be reduced, and efficient processing can be performed.

Furthermore, even when etching a multi-layer element made of different materials, by mixing a reaction processing gas corresponding to the material (corresponding to the material), it is possible to perform a continuous etching process without gas exchange. Can be eliminated, the time required for the etching process can be shortened, and efficient processing can be performed.

[Brief description of the drawings]

FIG. 1 is an overall configuration diagram of an apparatus for explaining an embodiment of a processing method and an apparatus according to the present invention. FIG. 2 is a principle explanatory view of the processing method of the present invention in which etching and deposition proceed in parallel. FIG. 3 is an explanatory view of the principle of processing in which etching and deposition proceed in parallel, FIG. 4 is an explanatory view of semiconductor device processing using an apparatus and method according to an embodiment of the present invention, and FIG. FIG. 6 is an explanatory diagram of a mixing ratio of a processing gas corresponding to a material at the time of processing a semiconductor element. FIG. 6 is a principle diagram of a processing method according to another embodiment of the present invention in which etching and deposition proceed in parallel. FIG. 7 is an explanatory view of forming an element isolation groove according to an embodiment of the present invention, FIG. 8 is a cross-sectional view of a CMOS circuit, FIG. 9 is a cross-sectional observation view of a semiconductor element, and FIG. FIG. 11 is a cross-sectional processing explanatory view of a semiconductor element, and FIG. Section processing explanatory view of a body element, and FIG. 12-FIG. 14 is a block diagram illustrating the principal components of a different the embodiment of the gas mixing device of the present invention, respectively. <Description of References> 1 ... Ion source, 2 ... Ion beam, 11 ... Nozzle, 12 ... Sample, 13 ... Stage, 14 ... Heater, 20, 21, 22 ... Mass flow, 26, 27, 28… Reaction gas cylinder, 33… Maflow controller, 39… Insulation film, 42… SiO ₂ film, 43… Etching area, 44, 45, 46… Al wiring, 48, 56, 57, 58 …… Flow control valve, 49, 59, 60, 61 …… Buffer chamber, 53, 54, 55 …… Nozzle, 62 …… Sample chamber, 63 …… Sliding seal part, 66 …… Exhaust pipe, 68 …… Secondary particle detector.

Continued on the front page (72) Inventor Akira Shimase 292 Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa Prefecture Inside the Manufacturing Research Laboratory, Hitachi, Ltd. (72) Inventor Junichi Mori 292 Yoshida-cho, Totsuka-ku, Yokohama-shi, Hitachi, Ltd. Inside the Manufacturing Technology Laboratory (72) Inventor Takahiko Takahashi 2326 Imai, Ome-shi, Tokyo Inside the Device Development Center, Hitachi, Ltd. (56) References JP-A-62-92324 (JP, A) JP-A-63-55941 (JP, A) JP-A-2-62039 (JP, A) JP-A-2-237027 (JP, A) JP-A-59-49829 (JP, A) (58) Fields investigated (Int. Cl. ⁷⁾ H01L 21/302 H01L 21/285 H01L 21/3213

Claims (10)

(57) [Claims] An object is irradiated with a focused charged beam in a reaction processing gas atmosphere, and the reaction processing gas is caused to react locally by an irradiation energy of the charged beam at an irradiation part of the focused charged beam. A processing method comprising a focused charged beam processing step involving etching of the workpiece, wherein the focused charged beam processing step includes mixing a plurality of reaction processing gases including an etching gas and a CVD gas as the reaction processing gases. A charged beam processing method comprising the step of selectively forming a CVD film on a side wall portion of a hole formed by reactive etching with the etching gas by using the above-mentioned gas system by deposition with the CVD gas. 2. The charged beam according to claim 1, wherein the reactive etching and the deposition are performed by using a difference in a reaction speed between the two based on a difference in an incident angle of the focused charged beam generated in the irradiation unit. Processing method. 3. The processing object is formed of a multilayer film of different materials, and a gas system in which the plurality of reaction processing gases are mixed is formed by mixing a plurality of etching gases corresponding to different materials of the processing object. The charged beam processing method according to claim 1, wherein the charged beam processing method comprises a gas system. 4. A method of irradiating a focused charged beam onto a workpiece in a reaction processing gas atmosphere and locally performing reactive etching at an irradiation part of the focused charging beam, wherein the reactive processing gas atmosphere is used. During the supply, a deposition gas for depositing an insulator is mixed and supplied with a reactive etching gas, and the reaction rate of the etching reaction and the deposition reaction based on the difference in the incident angle of the focused charged beam generated in the irradiation unit is increased. A charged beam processing method comprising a step of selectively forming an insulating film on a side wall portion of a hole etched by an irradiation part of the workpiece using the difference. 5. A beam source for generating at least a charged beam, a focusing optical system, a stage for mounting a workpiece sample, a secondary particle detector, a reaction processing gas supply means,
A controller for driving them, and irradiating the workpiece with a focused charged beam focused by the focusing optical system in a reaction processing gas atmosphere, and locally irradiating the focused charged beam with an irradiating part of the focused charged beam. A charged beam processing apparatus for performing a process, wherein a plurality of reaction processing gases including an etching gas and a CVD gas are mixed into the reaction processing gas supply means as the processing proceeds, and a mixing ratio of each reaction processing gas is controlled. Means for controlling the mixing ratio of the reaction processing gases, and the control means for controlling the flow rate of the reaction processing gas from the plurality of reaction processing gas cylinders, pipes, valves, and each reaction processing gas cylinder. Having a mass flow, a nozzle for spraying a reaction processing gas locally mixed in the vicinity of a specific workpiece, and a power supply controller for driving them. Charged beam processing apparatus. 6. A beam source for generating a charged beam, a focusing optical system, a stage on which a workpiece is mounted, a secondary particle detector, an electron shower, a reaction processing gas supply means, and driving thereof. A charged beam that irradiates a workpiece with a focused charged beam focused by the focusing optical system in a reaction processing gas atmosphere, and locally performs a reactive process at an irradiation unit of the focused charged beam. A processing apparatus, wherein a plurality of reaction processing gases including an etching gas and a CVD gas are mixed into the reaction processing gas supply means as the processing proceeds, and the mixing ratio of each reaction processing gas is controlled and supplied. Means for controlling and supplying a mixture ratio of the reaction processing gas, wherein a plurality of reaction processing gas cylinders, pipes, valves, reaction processing gas from each reaction processing gas cylinder are provided. Mass flow in order to control the amount,
A charged beam processing apparatus comprising: a nozzle for spraying a locally mixed reaction processing gas near a workpiece; and a power supply controller for driving the nozzle. 7. A beam source for generating at least a charged beam, a focusing optical system, a stage on which a workpiece is mounted, a secondary particle detector, a reaction processing gas supply means,
A controller for driving them, and irradiating the workpiece with a focused charged beam focused by the focusing optical system in a reaction processing gas atmosphere, and locally irradiating the focused charged beam with an irradiating part of the focused charged beam. A charged beam processing apparatus for performing a process, wherein a plurality of reaction processing gases including an etching gas and a CVD gas are mixed into the reaction processing gas supply means as the processing proceeds, and a mixing ratio of each reaction processing gas is controlled. Means for supplying and controlling the mixing ratio of the reaction processing gas, the plurality of reaction processing gas cylinders, piping, valves, and the reaction processing gas once to control the supply pressure of each reaction processing gas. Chamber, an exhaust system, a buffer chamber for mixing each reactive processing gas whose pressure is controlled in the sub-buffer chamber, an exhaust system, Engineering was nozzles for blowing locally reactive process gas in the vicinity, and charged beam processing apparatus comprising a power supply controller for driving them. 8. A beam source for generating a charged beam, a focusing optical system, a stage on which a workpiece sample is mounted, a secondary particle detector, an electron shower, a reaction processing gas supply means, and driving thereof. A charged beam that irradiates a workpiece with a focused charged beam focused by the focusing optical system in a reaction processing gas atmosphere, and locally performs a reactive process at an irradiation unit of the focused charged beam. A processing apparatus, wherein a plurality of reaction processing gases including an etching gas and a CVD gas are mixed into the reaction processing gas supply means as the processing proceeds, and the mixing ratio of each reaction processing gas is controlled and supplied. Means for controlling the mixing ratio of the reaction processing gas, and supplying the reaction processing gas by controlling the mixing pressure of the reaction processing gas. A sub-buffer chamber for storing the reaction processing gas, an exhaust system, a buffer chamber for mixing each reaction processing gas whose pressure is controlled in the sub-buffer chamber, an exhaust system, and locally supplying the reaction processing gas near the workpiece. A charged beam processing apparatus comprising a nozzle for spraying and a power supply controller for driving the nozzles. 9. A beam source for generating at least a charged beam, a focusing optical system, a stage on which a workpiece is mounted, a secondary particle detector, a reaction processing gas supply means,
A controller for driving them, and irradiating the workpiece with a focused charged beam focused by the focusing optical system in a reaction processing gas atmosphere, and locally irradiating the focused charged beam with an irradiating part of the focused charged beam. A charged beam processing apparatus for performing a process, wherein a plurality of reaction processing gases including an etching gas and a CVD gas are mixed into the reaction processing gas supply means as the processing proceeds, and a mixing ratio of each reaction processing gas is controlled. Means for controlling the mixing ratio of the reaction processing gas and supplying the reaction processing gas, the plurality of reaction processing gas cylinders, piping, valves, a buffer chamber for controlling the flow rate of the reaction processing gas, Valve, exhaust system,
A charged beam processing apparatus having a plurality of nozzles for locally spraying a reaction processing gas near a workpiece and mixing the reaction processing gas near a workpiece, and a power supply controller for driving the nozzles . 10. A beam source for generating a charged beam, a focusing optical system, a stage on which a workpiece is mounted, a secondary particle detector, an electron shower, a reaction processing gas supply means, and driving thereof. A charged beam that irradiates a workpiece with a focused charged beam focused by the focusing optical system in a reaction processing gas atmosphere, and locally performs a reactive process at an irradiation unit of the focused charged beam. A processing apparatus, wherein a plurality of reaction processing gases including an etching gas and a CVD gas are mixed into the reaction processing gas supply means as the processing proceeds, and the mixing ratio of each reaction processing gas is controlled and supplied. Means for controlling the mixing ratio of the reaction processing gas, and supplying the reaction processing gas with a plurality of reaction processing gas cylinders, piping, valves, and a buffer for controlling the flow rate of the reaction processing gas. A plurality of nozzles for spraying a reaction processing gas locally near the workpiece, mixing the reaction processing gas near the workpiece, and a power supply controller for driving them A charged beam processing apparatus comprising: