JP3113084B2 - Thermal shock test and manufacturing method for electronic components - Google Patents
Thermal shock test and manufacturing method for electronic componentsInfo
- Publication number
- JP3113084B2 JP3113084B2 JP04231698A JP23169892A JP3113084B2 JP 3113084 B2 JP3113084 B2 JP 3113084B2 JP 04231698 A JP04231698 A JP 04231698A JP 23169892 A JP23169892 A JP 23169892A JP 3113084 B2 JP3113084 B2 JP 3113084B2
- Authority
- JP
- Japan
- Prior art keywords
- electronic component
- thermal shock
- manufacturing
- heat
- test
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000035939 shock Effects 0.000 title claims description 28
- 238000012360 testing method Methods 0.000 title claims description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000000034 method Methods 0.000 claims description 15
- 239000000919 ceramic Substances 0.000 claims description 13
- 238000010998 test method Methods 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 description 11
- 238000004140 cleaning Methods 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 5
- 239000000047 product Substances 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000011344 liquid material Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- KYKAJFCTULSVSH-UHFFFAOYSA-N chloro(fluoro)methane Chemical compound F[C]Cl KYKAJFCTULSVSH-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000009863 impact test Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- RVZRBWKZFJCCIB-UHFFFAOYSA-N perfluorotributylamine Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)N(C(F)(F)C(F)(F)C(F)(F)C(F)(F)F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F RVZRBWKZFJCCIB-UHFFFAOYSA-N 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/38—Concrete; Lime; Mortar; Gypsum; Bricks; Ceramics; Glass
- G01N33/388—Ceramics
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Tests Of Electronic Circuits (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は電子部品の熱衝撃試験法
および製法に関する。さらに詳しくは、電子部品を形成
したのち、熱衝撃試験をする際の熱衝撃付与後の洗浄工
程を省略でき、試験工程を自動ライン機に取り入れるこ
とができる電子部品の熱衝撃試験法および製法に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thermal shock test method and a manufacturing method for electronic parts. More specifically, the present invention relates to a thermal shock test method and a manufacturing method of an electronic component that can omit a cleaning step after applying a thermal shock when performing a thermal shock test after forming an electronic component and can incorporate the test step into an automatic line machine. .
【０００２】[0002]
【従来の技術】ダイオード、トランジスタ、コンデン
サ、集積回路（ＩＣ）などの電子部品は実装時のハンダ
リフローやハンダディップなどによる熱衝撃に耐える必
要があるため、電子部品の形成後の試験項目の１つとし
て、熱衝撃試験が行なわれることがある。この熱衝撃試
験は前記電子部品に５〜10秒で200 〜300 ℃程度の熱を
加えることにより行なわれている。この工程は、熱衝撃
工程とも呼ばれており、電子部品に熱を伝える熱伝体と
して一般にシリコンオイル、第３世代フロン（たとえ
ば、イタリア国アウジモント社製ガルデン（商品名）、
スリーエム社製フロリナート（商品名））などの液状物
質が用いられている。2. Description of the Related Art Since electronic components such as diodes, transistors, capacitors, and integrated circuits (ICs) need to withstand thermal shock due to solder reflow or solder dip during mounting, this is one of the test items after the formation of electronic components. First, a thermal shock test may be performed. This thermal shock test is performed by applying heat of about 200 to 300 ° C. to the electronic component for 5 to 10 seconds. This process is also called a thermal shock process. In general, silicone oil, third-generation Freon (for example, Galden (trade name) manufactured by Ausimont, Italy) is used as a heat conductor that transmits heat to electronic components,
A liquid substance such as Fluorinert (trade name, manufactured by 3M) is used.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、熱伝体
として液状物質を用いると熱衝撃工程のあとに付着した
液状物質を完全に除去するため、洗浄工程が必要にな
る。また、現在、洗浄液として一般にフロンが使用され
ているが、環境上問題がある。さらに、設備が大きくな
るため、試験工程をライン機に取り入れることが困難で
あった。However, if a liquid material is used as the heat conductor, a cleaning step is required to completely remove the liquid material attached after the thermal shock step. Further, at present, chlorofluorocarbon is generally used as a cleaning solution, but there is an environmental problem. Furthermore, since the equipment becomes large, it was difficult to incorporate the test process into the line machine.
【０００４】本発明は、叙上の事情に鑑み、洗浄工程を
簡略化するとともに環境汚染を防止することができ、か
つ、ライン機に取り入れることができる電子部品の熱衝
撃試験法および製法を提供することを目的とする。SUMMARY OF THE INVENTION In view of the circumstances described above, the present invention provides a thermal shock test method and a manufacturing method of an electronic component which can simplify a cleaning process, prevent environmental pollution, and can be incorporated into a line machine. The purpose is to do.
【０００５】[0005]
【課題を解決するための手段】本発明の電子部品の熱衝
撃試験法は、形成された電子部品に熱衝撃を与えて試験
する電子部品の熱衝撃試験法であって、耐熱性容器内に
充填された加熱セラミックボール中に前記電子部品を入
れることにより熱衝撃を与えることを特徴としている。The thermal shock test method for an electronic component according to the present invention is a thermal shock test method for an electronic component in which a formed electronic component is subjected to a thermal shock for testing. A thermal shock is provided by placing the electronic component in a filled heated ceramic ball.
【０００６】また、本発明の電子部品の製法は、電子部
品が形成されたのち熱衝撃工程を含む試験工程を経て電
子部品が製造される電子部品の製法であって、前記熱衝
撃工程において、耐熱性容器内に充填された加熱セラミ
ックボール中に前記電子部品を入れることを特徴として
いる。Further, a method of manufacturing an electronic component according to the present invention is a method of manufacturing an electronic component in which an electronic component is manufactured through a test process including a thermal shock process after the electronic component is formed. It is characterized in that the electronic component is placed in a heated ceramic ball filled in a heat-resistant container.
【０００７】[0007]
【作用】本発明においては、熱伝体として加熱されたセ
ラミックボールを用いているため洗浄工程が簡略化さ
れ、また前記セラミックボールを収容する容器中を電子
部品を通過せしめる構成を採用することにより、熱衝撃
試験工程を自動ライン機に取り入れることができる。ま
たセラミックボールを使用しているため、電子部品と摩
擦しても電子部品に金属などが付着して絶縁抵抗を低下
させたりすることがない。In the present invention, a heated ceramic ball is used as a heat conductor, so that the cleaning process is simplified, and a structure is adopted in which electronic components are passed through a container containing the ceramic ball. In addition, the thermal shock test process can be incorporated into an automatic line machine. Further, since the ceramic ball is used, even if it rubs with the electronic component, a metal or the like does not adhere to the electronic component and the insulation resistance is not reduced.
【０００８】[0008]
【実施例】以下、添付図面を参照しつつ本発明の電子部
品の試験法および製法を説明する。まず電子部品が形成
される。たとえば、集積回路などの半導体装置は、半導
体基板にｐ型領域とｎ型領域によりＭＯＳトランジスタ
やダイオードなどの半導体回路が形成され、各チップに
切断されたのちリードフレームにダイボンディングさ
れ、半導体チップの各電極はリードフレームの各リード
端子とワイヤボンディングされる。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view showing a method for testing and manufacturing an electronic component according to the present invention. First, an electronic component is formed. For example, in a semiconductor device such as an integrated circuit, a semiconductor circuit such as a MOS transistor or a diode is formed on a semiconductor substrate by a p-type region and an n-type region. Each electrode is wire-bonded to each lead terminal of the lead frame.
【０００９】そののち、半導体チップおよびボンディン
グ部分が樹脂でモールドされ、リードフレームから各リ
ードが切断分離されて半導体装置が形成される。この半
導体装置は各リードがフォーミングされたり、フォーミ
ング前に最終的な電気試験に供せられ、良否の判別が行
なわれ、良品のみがリードフォーミングなどをされてユ
ーザに出荷される。ユーザでは半導体装置など電子部品
はプリント基板などに配列し、一括してハンダディップ
したりハンダリフローにより組み立てられる。これらの
組立時の温度は数秒位で200 〜230 ℃位になり、樹脂に
クラックが入ったり、内部の半導体チップなどに異常が
生じるばあいがあるため、あらかじめ前述の最終的電気
試験工程で熱衝撃試験が行なわれる。本発明ではこの熱
衝撃試験の方法を改善したもので、つぎにその詳細につ
いて説明する。Thereafter, the semiconductor chip and the bonding portion are molded with resin, and each lead is cut and separated from the lead frame to form a semiconductor device. In this semiconductor device, each lead is formed or subjected to a final electrical test before the forming, a pass / fail judgment is made, and only a non-defective product is subjected to lead forming or the like and shipped to a user. For a user, electronic components such as semiconductor devices are arranged on a printed circuit board or the like, and are collectively solder-dipped or assembled by solder reflow. The temperature at the time of assembly reaches about 200 to 230 ° C in a few seconds, and cracks may occur in the resin or abnormalities may occur in the internal semiconductor chips. An impact test is performed. In the present invention, the method of the thermal shock test is improved, and the details will be described below.
【００１０】樹脂封止された電子部品１は、図１に示さ
れる装置により熱衝撃が加えられる。The resin-sealed electronic component 1 is subjected to thermal shock by the apparatus shown in FIG.
【００１１】図１において、１は厚さ10mm程度のセラミ
ックスなどからなる耐熱性の容器であり、該容器１内に
は熱伝導率の大きなセラミックス製のボール２が充填さ
れている。具体的に、前記ボール２は、熱伝導率が0.4
〜0.8cal・cm-1・ sec-1・℃-1程度のＳｉＣ、ＢｅＯ、
ＭｇＯ、Ａｌ2 Ｏ3 などから作製されており、その直径
は、本発明においてとくに限定されないが、熱容量を考
慮して通常８〜800 μｍの範囲から選ばれる。In FIG. 1, reference numeral 1 denotes a heat-resistant container made of ceramics or the like having a thickness of about 10 mm. The container 1 is filled with ceramic balls 2 having a high thermal conductivity. Specifically, the ball 2 has a thermal conductivity of 0.4.
~ 0.8 cal · cm -1 · sec -1 · ° C -1 about SiC, BeO,
It is made of MgO, Al 2 O 3, etc., and its diameter is not particularly limited in the present invention, but is usually selected from the range of 8 to 800 μm in consideration of heat capacity.
【００１２】前記ボール２は、耐熱性容器１の外部に設
けられたヒータなどの加熱手段３により所定の温度（通
常230 〜300 ℃）に加熱されている。The ball 2 is heated to a predetermined temperature (usually 230 to 300 ° C.) by a heating means 3 such as a heater provided outside the heat-resistant container 1.
【００１３】電子部品４はリードフレームなどのフレー
ム５に固定された状態で前記容器１内に導入され、加熱
されたボール２中を通過して容器１の出口６より外部に
排出される。この際、電子部品の通過領域の下側にステ
ンレス板やセラミック板などで形成された保持板10によ
り電子部品を一定の位置に保持すると共に保温の機能を
もたせている。電子部品４の容器１内の滞在時間、すな
わち電子部品４の加熱時間は、ボール２の温度により異
なるが、概ね10〜30秒程度である。The electronic component 4 is introduced into the container 1 while being fixed to a frame 5 such as a lead frame, passes through the heated ball 2 and is discharged from the outlet 6 of the container 1 to the outside. At this time, the electronic component is held at a predetermined position by a holding plate 10 formed of a stainless steel plate, a ceramic plate, or the like below the passage area of the electronic component, and has a function of keeping heat. The residence time of the electronic component 4 in the container 1, that is, the heating time of the electronic component 4 varies depending on the temperature of the ball 2, but is generally about 10 to 30 seconds.
【００１４】加熱後の電子部品４は、Ｎ2 ブロー、振動
などにより、加熱工程で付着したセラミックボール２の
除去が行なわれる。The ceramic balls 2 adhered in the heating process are removed from the heated electronic component 4 by N 2 blow, vibration or the like.
【００１５】なお、電子部品４が容器１内に入るときお
よび出口６で電子部品とともに容器１外に排出されたボ
ール２はホッパー７により回収されて、再度上部からの
投入に供せられる。容器１の上部には供給部８が設けら
れ、排出された分のボールを補うために、新たなボール
が供給される。９は該供給部８に近接して設けられた加
熱手段で、所定の温度に昇温したボールを供給できるよ
うにしている。この供給部８は電子部品４の入口近辺に
設けられており、温度の下がり易い部分に常に所定温度
のボールを供給できるため、電子部品４を均一温度に加
熱できる。When the electronic component 4 enters the container 1 and the ball 2 discharged out of the container 1 together with the electronic component at the outlet 6, the ball 2 is recovered by the hopper 7 and supplied again from above. A supply unit 8 is provided at an upper portion of the container 1 and new balls are supplied to supplement the discharged balls. Reference numeral 9 denotes a heating means provided in the vicinity of the supply section 8 so as to supply a ball heated to a predetermined temperature. The supply unit 8 is provided near the entrance of the electronic component 4 and can always supply a ball having a predetermined temperature to a portion where the temperature is likely to decrease, so that the electronic component 4 can be heated to a uniform temperature.
【００１６】以上説明した実施例では樹脂で封入された
集積回路の半導体装置の例で説明したが、これらの樹脂
封入されたものに限らず、他のアルミ缶などで外装され
たものでもよく、また電子部品としても、ＩＣ以外のダ
イオードやトランジスタ、発光装置などの個別半導体装
置や固体電解コンデンサなど他の電子部品についても、
電子部品が形成された試験工程で本発明を適用すること
により実装時の熱衝撃に対応する熱衝撃工程を行なうこ
とができる。In the above-described embodiments, an example of a semiconductor device of an integrated circuit sealed with a resin has been described. However, the present invention is not limited to these semiconductor devices sealed with a resin. In addition, as electronic components, other electronic components such as diodes and transistors other than ICs, individual semiconductor devices such as light emitting devices and solid electrolytic capacitors,
By applying the present invention in a test process in which an electronic component is formed, a thermal shock process corresponding to a thermal shock during mounting can be performed.
【００１７】[0017]
【発明の効果】以上説明したとおり、本発明において
は、電子部品と加熱されたセラミックボールとを接触さ
せることにより前記電子部品に熱衝撃を付与しているの
で、熱衝撃付与後の洗浄工程を簡略化することができ
る。As described above, in the present invention, the thermal shock is applied to the electronic component by bringing the electronic component into contact with the heated ceramic ball. It can be simplified.
【００１８】また、電子部品に付着したボールは固体で
完全にしかも容易に除去されるので、従来、液体による
耐熱試験で、そののちに洗浄工程が必要であったり、半
田耐熱試験を行なった電子部品は半田が付着するため出
荷不能となっていたが、本発明の試験を行なえば全数か
ら不良品を選別することができ、かつ特別な洗浄工程を
必要とせず、すべての良品を出荷することができる。Further, since the ball adhered to the electronic component is solid and completely and easily removed, conventionally, a cleaning step is required after a heat resistance test using a liquid, or an electronic component subjected to a solder heat resistance test. Parts could not be shipped due to the adhesion of solder, but if the test of the present invention is performed, defective products can be sorted out from all the products, and all good products must be shipped without a special cleaning process Can be.
【図１】本発明の熱衝撃試験法の説明図である。FIG. 1 is an explanatory diagram of a thermal shock test method of the present invention.
１ 耐熱性容器 ２ セラミックボール ３ 加熱手段 ４ 電子部品 DESCRIPTION OF SYMBOLS 1 Heat resistant container 2 Ceramic ball 3 Heating means 4 Electronic component
Claims (2)
験する電子部品の熱衝撃試験法であって、耐熱性容器内
に充填された加熱セラミックボール中に電子部品を入れ
ることにより熱衝撃を与えることを特徴とする電子部品
の熱衝撃試験法。1. A thermal shock test method for an electronic component in which a formed electronic component is subjected to a thermal shock for testing, wherein the electronic component is placed in a heated ceramic ball filled in a heat-resistant container. A method for testing the thermal shock of electronic components, characterized by giving
含む試験工程を経て電子部品が製造される電子部品の製
法であって、前記熱衝撃工程において、耐熱性容器内に
充填された加熱セラミックボール中に前記電子部品を入
れることを特徴とする電子部品の製法。2. A method for manufacturing an electronic component, wherein the electronic component is manufactured through a test step including a thermal shock step after the electronic component is formed, wherein the heating step includes filling a heat-resistant container in the heat shock step. A method for producing an electronic component, comprising placing the electronic component in a ceramic ball.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04231698A JP3113084B2 (en) | 1992-08-31 | 1992-08-31 | Thermal shock test and manufacturing method for electronic components |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP04231698A JP3113084B2 (en) | 1992-08-31 | 1992-08-31 | Thermal shock test and manufacturing method for electronic components |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0682515A JPH0682515A (en) | 1994-03-22 |
| JP3113084B2 true JP3113084B2 (en) | 2000-11-27 |
Family
ID=16927604
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP04231698A Expired - Fee Related JP3113084B2 (en) | 1992-08-31 | 1992-08-31 | Thermal shock test and manufacturing method for electronic components |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3113084B2 (en) |
-
1992
- 1992-08-31 JP JP04231698A patent/JP3113084B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0682515A (en) | 1994-03-22 |
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| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |