JP3099568B2 - Method for producing lead titanate thin film - Google Patents

Method for producing lead titanate thin film

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Publication number
JP3099568B2
JP3099568B2 JP743193A JP743193A JP3099568B2 JP 3099568 B2 JP3099568 B2 JP 3099568B2 JP 743193 A JP743193 A JP 743193A JP 743193 A JP743193 A JP 743193A JP 3099568 B2 JP3099568 B2 JP 3099568B2
Authority
JP
Japan
Prior art keywords
thin film
alkoxide
lead
titanium
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP743193A
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Japanese (ja)
Other versions
JPH06211520A (en
Inventor
良夫 安部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
Original Assignee
Murata Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to JP743193A priority Critical patent/JP3099568B2/en
Priority to EP94100801A priority patent/EP0607967B1/en
Priority to DE69424885T priority patent/DE69424885T2/en
Priority to US08/184,675 priority patent/US5993901A/en
Publication of JPH06211520A publication Critical patent/JPH06211520A/en
Application granted granted Critical
Publication of JP3099568B2 publication Critical patent/JP3099568B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明はチタン酸鉛の製造方法に
関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing lead titanate.

【0002】[0002]

【従来の技術】チタン酸鉛は、強誘電体材料、圧電体材
料あるいは焦電体材料として優れた性質を有し、磁器コ
ンデンサ、アクチュエータ、焦電型赤外線センサー等に
幅広く応用されている。これらの用途に適用する場合、
電子機器の小型化、高性能化等に伴い、チタン酸鉛を薄
膜として使用することが一般化しているが、その薄膜化
方法としては、例えば、スパッタ−法(特公昭62−4
1311号公報)、CVD(特開昭63−178408号
公報)、真空蒸着法(特開平1−74778号公報)、ク
ラスタ・イオンビーム法(特開平1−222046号公
報)、プラズマ法(特開平2−57686号公報)、塗布
焼付け法(特開昭60−236404号公報)、及び融液
を急冷して薄膜を形成する融液法(特開昭60−847
12号公報)などが知られている。
2. Description of the Related Art Lead titanate has excellent properties as a ferroelectric material, a piezoelectric material or a pyroelectric material, and has been widely applied to ceramic capacitors, actuators, pyroelectric infrared sensors and the like. When applied to these uses,
The use of lead titanate as a thin film has become popular with the miniaturization and high performance of electronic equipment. For example, a sputtering method (Japanese Patent Publication No. Sho 62-4)
No. 1311), CVD (JP-A-63-178408), vacuum deposition method (JP-A-1-74778), cluster ion beam method (JP-A-1-222046), plasma method (Japanese Patent Laid-Open No. 2-57686), a coating baking method (Japanese Patent Application Laid-Open No. 60-236404), and a melt method of rapidly cooling the melt to form a thin film (Japanese Patent Application Laid-Open No. 60-847).
No. 12).

【0003】[0003]

【発明が解決しようとする課題】しかしながら、スパッ
ター法、CVD法及び真空蒸着法などの気相法は、複雑
で高価な装置を必要とし、高温で成膜するため基材の材
質が制約され、しかも原料ガスの流れの中に基材をさら
すため複雑な形状や基板の裏側には成膜できないなどの
問題がある。塗布焼付け法は、塗布と焼付けを繰り返す
必要があり作業が繁雑であり、しかも、複雑な形状の基
材には適用できないなどの問題がある。熔融液を急冷し
て薄膜を形成する方法は、耐熱性が要求されるため基材
の材質が著しく制限される問題がある。
However, gas phase methods such as sputtering, CVD, and vacuum deposition require complicated and expensive equipment, and the material of the base material is restricted because of forming a film at a high temperature. In addition, since the substrate is exposed to the flow of the source gas, there are problems such as a complicated shape and film formation on the back side of the substrate. The coating and baking method has a problem that it is necessary to repeat coating and baking, the operation is complicated, and it cannot be applied to a substrate having a complicated shape. The method of forming a thin film by quenching the melt has a problem in that heat resistance is required and the material of the base material is significantly limited.

【0004】従って、本発明は、基材の形状や材質に制
約を受けることなく、大面積のチタン酸鉛薄膜を安価に
製造することを目的とするものである。
Accordingly, an object of the present invention is to produce a large area lead titanate thin film at low cost without being restricted by the shape and material of the substrate.

【0005】[0005]

【課題を解決するための手段】本発明は、前記課題を解
決するための手段として、カルボン酸鉛とチタンアルコ
キシドから複合アルコキシドを生成させ、その複合アル
コキシドの水溶液に基材を浸漬し、複合アルコキシドの
加水分解により基材表面に薄膜を形成させるようにした
ものである。また、本発明は、カルボン酸鉛とチタンア
ルコキシドとを反応させて、鉛チタン複合アルコキシド
を生成させ、その複合アルコキシドをアミノアルコール
で変成した後、そのアミノアルコール変成複合アルコキ
シドの水溶液に基材を浸漬して、前記複合アルコキシド
の加水分解により基材表面に薄膜を形成させ、これを熱
処理するようにしたものである。
According to the present invention, as a means for solving the above-mentioned problems, a composite alkoxide is formed from lead carboxylate and a titanium alkoxide, and a base material is immersed in an aqueous solution of the composite alkoxide. Is formed into a thin film on the substrate surface by hydrolysis of Further, the present invention provides a method of forming a lead-titanium composite alkoxide by reacting a lead carboxylate and a titanium alkoxide, modifying the composite alkoxide with an amino alcohol, and then immersing the substrate in an aqueous solution of the amino alcohol-modified composite alkoxide. Then, a thin film is formed on the surface of the substrate by hydrolysis of the composite alkoxide, and this is heat-treated.

【0006】前記カルボン酸鉛としては、炭素数10以
下、好ましくは6以下の低級カルボン酸塩が好適であ
り、例えば、酢酸鉛、プロピオン酸鉛、酪酸鉛、カプロ
ン酸鉛、カプリル酸鉛などが挙げられる。このカルボン
酸鉛は、そのままチタンアルコキシド溶液に添加しても
良く、また、チタンアルコキシドを溶解するのに使用し
た溶媒と同じ溶媒に溶解させて溶液となし、その溶液を
アルコキシド溶液と混合するようにしても良い。
As the lead carboxylate, a lower carboxylate having a carbon number of 10 or less, preferably 6 or less is suitable, for example, lead acetate, lead propionate, lead butyrate, lead caproate, lead caprylate and the like. No. This lead carboxylate may be added to the titanium alkoxide solution as it is, or dissolved in the same solvent as the solvent used to dissolve the titanium alkoxide to form a solution, and the solution is mixed with the alkoxide solution. May be.

【0007】チタンアルコキシドとしては、任意のもの
を使用できるが、アルコキシ基の炭素数が15以下、好
ましくは、6以下のものが望ましい。代表的なものとし
ては、チタンエトキシド、チタンイソブトキシド (Ti
(OC494)、チタンイソプロポキシド (Ti (O
374)、ジブトキシ−ジトリエタノール−アミネ
ートチタン、ジブトキシ−ジ (2− (ヒドロキシエチル
アミノ)エトキシ)チタン (Ti (C49O)2・ [N
(C24OH)2・ (C24O)2])などが挙げられる
が、これらに限定されるものではない。
As the titanium alkoxide, any one can be used, but an alkoxy group having 15 or less, preferably 6 or less carbon atoms is desirable. Typical examples are titanium ethoxide, titanium isobutoxide (Ti
(OC 4 H 9 ) 4 ), titanium isopropoxide (Ti (O
C 3 H 7) 4), dibutoxy - ditolyl ethanol - aminate titanium, dibutoxy - di (2- (hydroxyethylamino) ethoxy) titanium (Ti (C 4 H 9 O ) 2 · [N
(C 2 H 4 OH) 2. (C 2 H 4 O) 2 ]) and the like, but are not limited thereto.

【0008】前記複合アルコキシドを生成させる溶媒と
しては、エチレングリコールモノアルキルエーテル(R
OCH2CH2OH)を使用するのが好適である。前記エ
チレングリコールモノアルキルエーテルには、エチレン
グリコールモノメチルエーテル、エチレングリコールモ
ノエチルエーテル、エチレングリコールモノイソプロピ
ルエーテル、エチレングリコールモノn−プロピルエー
テル、エチレングリコールモノイソブチルエーテル、エ
チレングリコールモノn−ブチルエーテル、エチレング
リコールフェニルエーテルなどが含まれ、商品名では、
メチルセロソルブ、エチルセロソルブなどが挙げられ
る。
[0008] As a solvent for producing the complex alkoxide, ethylene glycol monoalkyl ether (R
OCH 2 CH 2 OH) is preferably used. The ethylene glycol monoalkyl ether includes ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monoisopropyl ether, ethylene glycol mono n-propyl ether, ethylene glycol monoisobutyl ether, ethylene glycol mono n-butyl ether, ethylene glycol phenyl Ether, etc., and in the trade name,
Methyl cellosolve, ethyl cellosolve and the like can be mentioned.

【0009】前記アミノアルコールとしては、任意のも
のを使用できるが、代表的なものとしてはβ−アミノエ
チルアルコール、β−アミノプロピルアルコール、トリ
エタノールアミンなどが挙げられる。
As the amino alcohol, any one can be used. Representative examples thereof include β-aminoethyl alcohol, β-aminopropyl alcohol, and triethanolamine.

【0010】基材としては、アルミナ、セラミックスそ
の他任意の材料を使用すれば良い。また、成膜用水溶液
中の鉛及びチタンの濃度は、それぞれ0.01mM/l〜
100mM/lとするのが好適である。これは、成膜用水
溶液に含まれる鉛及びチタンの濃度が0.01mM/l未
満では、チタン酸鉛は島状に離散的に析出して膜が形成
されず、100mM/lを越えると、沈澱を生じ、基板表
面を利用した核形成が起こらず緻密な膜が得られないか
らである。この場合、水溶液の温度は0〜110℃の範
囲内の温度に維持して反応させるのが好適である。これ
は液温が0℃未満では、析出速度が極端に遅くなり膜が
形成されず、また、110℃を越えると、基板の表面に
気泡が付着し、基材表面に形成される膜の連続性が失わ
れるからである。さらに、基材表面に形成したチタン酸
鉛薄膜の熱処理は、400〜750℃の温度で行うのが
好適である。これは、熱処理温度が400℃未満では、
アモルファス相又はパイロクロア相が変態するため、強
誘電体薄膜が得られず、750℃を越えると、チタン酸
鉛の針状結晶が成長して膜の平滑性及び均質性が失なわ
れるからである。
As the substrate, alumina, ceramics or any other material may be used. The concentrations of lead and titanium in the aqueous solution for film formation are 0.01 mM / l or more, respectively.
Preferably it is 100 mM / l. This is because when the concentration of lead and titanium contained in the aqueous solution for film formation is less than 0.01 mM / l, the lead titanate is discretely precipitated in the form of islands to form no film, and when the concentration exceeds 100 mM / l, This is because precipitation occurs, nucleation using the substrate surface does not occur, and a dense film cannot be obtained. In this case, it is preferable to carry out the reaction while maintaining the temperature of the aqueous solution within the range of 0 to 110 ° C. If the liquid temperature is lower than 0 ° C., the deposition rate becomes extremely slow and a film is not formed, and if the liquid temperature exceeds 110 ° C., air bubbles adhere to the surface of the substrate and the film formed on the surface of the substrate becomes continuous. Because sex is lost. Further, the heat treatment of the lead titanate thin film formed on the substrate surface is preferably performed at a temperature of 400 to 750 ° C. This is because when the heat treatment temperature is less than 400 ° C,
Because the amorphous phase or the pyrochlore phase is transformed, a ferroelectric thin film cannot be obtained. If the temperature exceeds 750 ° C., needle-like crystals of lead titanate grow and the smoothness and homogeneity of the film are lost. .

【0011】[0011]

【作用】アルコール性水酸基とエーテル結合を有するエ
チレングリコールモノアルキルエーテルを溶媒とし、そ
の溶液中でカルボン酸鉛とチタンアルコキシドを反応さ
せると、鉛とチタンの複合アルコキシドが形成する。こ
れをアミノアルコールで変成し、これを水に溶解して成
膜用の水溶液を調製し、その水溶液に基材を浸漬して徐
々に加水分解させると、不均一核形成により基材表面に
膜の核が形成し、加水分解の進行に伴って核が成長し、
膜となる。この膜を熱処理することによりチタン酸鉛薄
膜が形成される。
When ethylene glycol monoalkyl ether having an alcoholic hydroxyl group and an ether bond is used as a solvent and a lead carboxylate is reacted with a titanium alkoxide in the solution, a complex alkoxide of lead and titanium is formed. This is denatured with amino alcohol, this is dissolved in water to prepare an aqueous solution for film formation, and the substrate is immersed in the aqueous solution and gradually hydrolyzed. Nuclei are formed, and as the hydrolysis proceeds, the nuclei grow,
It becomes a film. By subjecting this film to heat treatment, a lead titanate thin film is formed.

【0012】[0012]

【実施例】酢酸鉛0.5モル(以下、Mと記す)をメチル
セロソルブ4Mに溶解し、約110℃で水分を完全に蒸
発させた後、約50℃まで冷却し、これに0.5Mのチ
タン酸テトライソプロピルを添加して約100℃で1時
間反応させる。その反応液にトリエタノールアミン2M
を加え、アルコ−リシスによりアルコキシル基をアミノ
トリエトキシ基で置換し、トリエタノールアミン変成鉛
チタン複合アルコキシドを得る。
EXAMPLE 0.5 mol of lead acetate (hereinafter referred to as M) was dissolved in 4M of methyl cellosolve, water was completely evaporated at about 110 ° C., then cooled to about 50 ° C., and 0.5M was added thereto. Of tetraisopropyl titanate, and reacted at about 100 ° C. for 1 hour. The reaction mixture contains 2M triethanolamine.
And the alkoxyl group is substituted with an aminotriethoxy group by alcoholysis to obtain a triethanolamine-modified lead-titanium composite alkoxide.

【0013】得られたトリエタノールアミン変成鉛チタ
ン複合アルコキシドを表1に示す濃度になるようにイオ
ン交換水に溶解して水溶液を得、その水溶液に鏡面研摩
した10×15×2mmの大きさのアルミナ焼結体基板を
浸漬して、表1に示す温度で4日間保持したところ、試
料1及び2を除く各基板上に薄膜が形成された。各薄膜
を空気中、表1に示す温度で1時間熱処理した。
The obtained triethanolamine-modified lead-titanium composite alkoxide was dissolved in ion-exchanged water to a concentration shown in Table 1 to obtain an aqueous solution, and the aqueous solution was mirror-polished to a size of 10 × 15 × 2 mm. When the alumina sintered body substrate was immersed and kept at the temperature shown in Table 1 for 4 days, a thin film was formed on each substrate except for Samples 1 and 2. Each thin film was heat-treated in air at the temperature shown in Table 1 for 1 hour.

【0014】[0014]

【表1】 番号 Pb(II) 液温 熱処理温度 (mM/l) (℃) (℃) *1 0.005 110 500 *2 100 115 500 3 0.01 110 400 4 0.1 100 500 5 1 40 600 6 10 5 700 7 100 0 750 [Table 1] No. Pb (II) Liquid temperature Heat treatment temperature (mM / l) (° C) (° C) * 1 0.005 110 500 * 2 100 115 500 3 0.01 110 400 4 0.1 100 500 5 1 40 600 600 5 700 7 100 0 750

【0015】各基板の表面上に形成された薄膜について
X線回折分析したところ、試料3〜6のいづれも、図1
に示す試料6についての薄膜X線回折図と同様な結果が
得られ、正方結晶ペロブスカイト型チタン酸鉛であるこ
とが確認された。なお、試料1の場合、チタン酸鉛は離
散的に島状に析出した膜しか得られず、また、試料2の
場合、沈澱が生成して薄膜は得られなかった。
When a thin film formed on the surface of each substrate was analyzed by X-ray diffraction, any of Samples 3 to 6 showed the results shown in FIG.
The results similar to those of the thin film X-ray diffraction pattern of Sample 6 shown in Fig. 6 were obtained, and it was confirmed that the sample 6 was a tetragonal crystal perovskite-type lead titanate. In addition, in the case of Sample 1, only a film in which lead titanate was discretely precipitated in an island shape was obtained, and in the case of Sample 2, a precipitate was formed and a thin film was not obtained.

【0016】[0016]

【発明の効果】以上の説明から明らかなように、本発明
は、カルボン酸鉛とチタンアルコキシドとから複合アル
コキシドを生成させた後、これを加水分解してその液中
に浸漬された基板表面に薄膜を析出させ、これを熱処理
することによってチタン酸鉛薄膜を形成するようにした
ので、基板の材質や形状に左右されることなく、均質な
薄膜を製造でき、しかも、熱処理を低温度で行えるの
で、従来の乾式法のように焼成時の鉛の蒸発による損失
がなく、モル比のズレのない所望の組成を有する大面積
の薄膜を簡便かつ安価に製造することができるなど優れ
た効果を奏する。
As is apparent from the above description, the present invention is to produce a composite alkoxide from a lead carboxylate and a titanium alkoxide, hydrolyze the composite alkoxide, and apply it to the surface of the substrate immersed in the liquid. Since a thin film is deposited and heat-treated to form a lead titanate thin film, a uniform thin film can be manufactured without being affected by the material and shape of the substrate, and the heat treatment can be performed at a low temperature. Therefore, unlike the conventional dry method, there is no loss due to evaporation of lead at the time of sintering, and a large area thin film having a desired composition without deviation in molar ratio can be easily and inexpensively manufactured. Play.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 本発明方法によるチタン酸鉛薄膜のX線回折
図である。
FIG. 1 is an X-ray diffraction diagram of a lead titanate thin film according to the method of the present invention.

Claims (5)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 カルボン酸鉛とチタンアルコキシドから
複合アルコキシドを生成させ、その複合アルコキシドの
水溶液に基材を浸漬し、該複合アルコキシドの加水分解
により基材表面に薄膜を形成させることを特徴とするチ
タン酸鉛薄膜の製造方法。
1. A composite alkoxide is formed from a lead carboxylate and a titanium alkoxide, a substrate is immersed in an aqueous solution of the composite alkoxide, and a thin film is formed on the surface of the substrate by hydrolysis of the composite alkoxide. A method for producing a lead titanate thin film.
【請求項2】 前記カルボン酸鉛とチタンアルコキシド
とをエチレングリコールモノアルキルエーテルの存在下
で反応させて複合アルコキシドを生成させる請求項1記
載の方法。
2. The method according to claim 1, wherein said lead carboxylate and titanium alkoxide are reacted in the presence of ethylene glycol monoalkyl ether to form a composite alkoxide.
【請求項3】 前記複合アルコキシドをアミノアルコー
ルで変成した後、水溶液を調製する請求項1又は請求項
2記載の方法。
3. The method according to claim 1, wherein an aqueous solution is prepared after denaturing the complex alkoxide with an amino alcohol.
【請求項4】 前記複合アルコキシド水溶液中の鉛及び
チタンの濃度が、水溶液1リットル当りPb(II)及びTi
(IV)換算で0.01mM/l≦Pb(II)<100mM/l、
0.01mM/l≦Ti(IV)<100mM/lである請求項1
記載の方法。
4. The concentration of lead and titanium in said composite alkoxide aqueous solution is determined by comparing Pb (II) and Ti
(IV) 0.01 mM / l ≦ Pb (II) <100 mM / l,
2. The method according to claim 1, wherein 0.01 mM / l ≦ Ti (IV) <100 mM / l.
The described method.
【請求項5】 前記基材の表面に形成された薄膜を40
0〜750℃の温度で熱処理する請求項1に記載の方
法。
5. The thin film formed on the surface of the base material is
The method according to claim 1, wherein the heat treatment is performed at a temperature of 0 to 750C.
JP743193A 1993-01-20 1993-01-20 Method for producing lead titanate thin film Expired - Lifetime JP3099568B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP743193A JP3099568B2 (en) 1993-01-20 1993-01-20 Method for producing lead titanate thin film
EP94100801A EP0607967B1 (en) 1993-01-20 1994-01-20 Production of thin films of a lead titanate system
DE69424885T DE69424885T2 (en) 1993-01-20 1994-01-20 Production of thin films of a lead titanate system
US08/184,675 US5993901A (en) 1993-01-20 1994-01-21 Production of thin films of a lead titanate system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP743193A JP3099568B2 (en) 1993-01-20 1993-01-20 Method for producing lead titanate thin film

Publications (2)

Publication Number Publication Date
JPH06211520A JPH06211520A (en) 1994-08-02
JP3099568B2 true JP3099568B2 (en) 2000-10-16

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5143408B2 (en) * 2006-12-08 2013-02-13 昭和電工株式会社 Coating agent for complex oxide film formation

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Publication number Publication date
JPH06211520A (en) 1994-08-02

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