JP3098203B2 - Sample processing method and apparatus - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a sample processing method and apparatus, and more particularly to a sample processing method and apparatus suitable for processing a sample such as a semiconductor element substrate.

[0002]

2. Description of the Related Art A sample such as a semiconductor element substrate is etched using a chemical solution, or is etched using, for example, plasma. In such a sample etching process, it is necessary to pay sufficient attention to corrosion of the sample after the etching process.

[0003] As a technique for preventing corrosion of a sample after such an etching process, there has been conventionally known, for example, a plasma process in which an etching chamber and a vacuum chamber are connected to the etching chamber as described in JP-A-59-186326. It is known that a resist film is ashed (ashed) using plasma in a chamber to remove a chlorine compound which is a corrosive substance remaining in the resist film or the like. Also, adjust the temperature of the sample after the etching process.
By setting the temperature to 200 ° C. or higher, it is possible to promote the vaporization of the remaining corrosive chloride, thereby preventing the corrosion of the sample after the etching treatment. Further, for example, as described in JP-A-61-133388, a sample to be processed, which is a sample after the etching process, is taken out of the etching chamber and transported to the heat treatment chamber, where heated air is applied to the workpiece. It is known that the object to be treated is taken out of the heat treatment chamber, washed with water, and dried to prevent corrosion of the object after the etching treatment due to reaction with the atmosphere.

[0004]

SUMMARY OF THE INVENTION The above-mentioned prior art, that is, a technique in which a sample after an etching process is subjected to an ashing process using plasma, and a process in which a sample after an etching process is subjected to a temperature which promotes vaporization of residual corrosive substances. The technology of heating or the technology of washing and drying after drying the sample after the etching process has a problem that sufficient anticorrosion performance cannot be obtained depending on the type of the sample.

For example, it is considered that corrosion prevention after etching a single metal film such as aluminum (Al) for a wiring film is also effective in the above-mentioned conventional technology. However, a sample having a metal having a different ionization tendency, for example, an Al-copper (Cu) alloy film,
The anticorrosion effect of the alloy film and the high melting point metal or a laminated film of these silicide films after the etching treatment cannot be sufficiently obtained.

That is, with the remarkable progress of miniaturization in recent years, wiring films have been increasingly miniaturized, and in order to prevent disconnection due to electromigration or stress migration, conventional Al-silicon (Si) has been used as a wiring film. )) From an Al-Cu-Si alloy film with a Cu content of several percent or less, and in addition to these, with the purpose of reducing contact resistance, an Al-Cu-si alloy film and a refractory metal, such as titanium Tungsten (Ti
W), titanium nitride (TiN), and molybdenum silicon (Mosi) films having a laminated structure have been used. In the case of such a wiring film structure, Al and C
Due to the different ionization tendency of metals such as u, W, Ti, Mo, etc., a kind of battery action works using water component as a medium, so that corrosion of wiring film is accelerated by so-called electrolytic corrosion, and corrosive substances generated by etching process Even if the sample was removed by ashing using plasma at a high temperature of 200 ° C or higher, corrosion was caused by corrosive ions that remained slightly within tens of minutes to several hours after the sample was taken out to the atmosphere. Become.

A main object of the present invention is to provide a sample processing method and apparatus which can sufficiently prevent corrosion of a sample after etching regardless of the type of the sample.

[0008]

A feature of the present invention is that a sample of a wiring film made of a laminate containing metals having different ionization tendencies is prepared by using a resist mask formed on the wiring film in a first processing chamber. Plasma etching with a first gas plasma through a sample, and a sample after the etching
A wet processing step of preliminarily removing residues remaining in the sample, a drying processing step of drying the wet-processed sample, a resist mask of the dry-processed sample , and a residue remaining after the wet processing.
Removing the remaining residue to be retained by the second gas plasma in the second processing chamber.

Another feature of the present invention is that a sample having a wiring film made of a laminate containing metals having different ionization tendencies from each other and a resist mask formed on the wiring film is placed in a first processing chamber. (1) a processing means for performing plasma etching by gas plasma and remaining on the processed sample
Wet processing means for preliminarily removing the residue, drying means for drying the sample processed by the wet processing means, a resist mask for the dried sample, and further remaining after the wet processing
And a post-processing means for removing a residual residue to be generated by a second gas plasma in a second processing chamber, wherein the sample processing apparatus continuously processes the samples one by one.

According to the present invention, different ionization inclinations are provided.
Processing of Wiring Film Samples Consisting of Laminates Containing Oriented Metals
After the sample is etched, wet cleaning
And dried, and then a resist mask and
A series of processes for removing residual corrosion products was performed on Sample 1
Perform for each sheet. This allows different ionization gradients
Of a wiring film sample consisting of a laminate containing
Corrosion after chining can be sufficiently prevented.

[0011]

BRIEF DESCRIPTION OF THE DRAWINGS FIG.
This will be described with reference to FIG. In FIG. 1, a sample processing apparatus includes a processing apparatus 10 for etching a sample, a plasma post-processing apparatus 2
0, comprising a wet processing apparatus 30 and a drying processing apparatus 40, and having at least means 50 to 70 for transporting a sample between the processing apparatuses.

In FIG. 1, as a processing apparatus 10, an apparatus for processing a sample under reduced pressure using plasma, for example, an etching processing is used. The plasma etching apparatus includes a plasma etching apparatus, a reactive sputter etching apparatus, a non-magnetic field type microwave plasma etching apparatus, a magnetic field type microwave plasma etching apparatus, and an electron cyclotron resonance (ECR) type microwave plasma etching apparatus. Etching equipment, photo-excited plasma etching equipment,
A neutral particle etching device or the like is employed. In addition, as the processing apparatus 10, an apparatus for performing wet etching of a sample, an apparatus for performing etching processing using a corrosive gas, or the like can be employed.

In FIG. 1, the plasma post-processing apparatus 20 includes:
An apparatus that performs post-processing, for example, ashing processing, on the processed sample in the processing apparatus 10 under reduced pressure using plasma is used. In addition, as the ashing processing apparatus, a plasma ashing apparatus, a non-magnetic field type and a magnetic field type microwave plasma etching apparatus, an ECR type microwave plasma ashing apparatus, a photo-excited plasma ashing apparatus, and the like are employed.

In FIG. 1, as the wet processing apparatus 30, for example, a wet processing apparatus for wet-processing the post-processed sample in the plasma post-processing apparatus 20 is used. In the spinning wet processing apparatus, the post-processed sample is subjected to, for example, a spinning cleaning treatment with water, a chemical solution,
For example, a spinning cleaning process is sequentially performed with water.
In this case, the chemical is appropriately selected depending on the substance to be removed from the post-processed sample. As the processing atmosphere, an inert gas atmosphere such as a nitrogen gas atmosphere or an air atmosphere is employed. After the wet treatment, a drying treatment such as draining may be performed in this state.

In FIG. 1, as a drying processing device 40, a wet-processed sample in a wet processing device 30 is subjected to a drying process, for example, an apparatus for heating and drying a wet-processed sample or a wet-processed sample. An apparatus or the like for performing a drying process by blowing a drying gas is used. As the processing atmosphere, a nitrogen gas atmosphere or an air atmosphere is employed.

In FIG. 1, a sample transport means 50 has a function of transporting a processed sample between a processing station (not shown) of the processing apparatus 10 and a processing station (not shown) of the plasma post-processing apparatus 20. The sample transfer means 60 has a function of transferring the post-processed sample between the processing station of the plasma post-processing apparatus 20 and the processing station (not shown) of the wet processing apparatus 30. The sample transfer means 70 includes a processing station of the wet processing apparatus 30 and a processing station of the drying processing apparatus 40.
(Not shown) for transporting the wet-processed sample. The sample transport means 50 can transfer a sample between each processing station of the processing apparatus 10 and the plasma post-processing apparatus 20. The sample transfer means 60 can transfer a sample between each processing station of the plasma post-processing apparatus 20 and the wet processing apparatus 30. The sample transport means 70 can transfer a sample between each processing station of the wet processing apparatus 30 and the drying processing apparatus 40. Sample transfer means 50-70
As a known transport means, for example, mechanically, or electrically, or magnetically, a sample scooping tool or a sample that holds a sample from its back surface on an arm that is rotated or reciprocated magnetically. An arm transfer device provided with a sample gripper for gripping and holding the sample at its outer peripheral edge or a sample gripper for sucking, for example, electromagnetic suction or vacuum suction, or a belt having an endless belt wound around a driving roller and a driven roller. A transport device, a device for transporting a sample by a gas blowing force, or the like is employed. When the processing apparatus 10 is an apparatus for processing a sample under reduced pressure using plasma, the sample transfer means 50 is provided so as to be able to transfer the processed sample in a reduced pressure space without exposing the processed sample to the atmosphere.

In FIG. 1, in this case, a sample transporting means 80 for transporting a sample to be processed by the processing apparatus 10 to the processing apparatus 10 and a sample dried by the drying processing apparatus 40 are placed in, for example, a collection cassette (not shown). (Omitted) is provided. The sample transfer means 80 and 90 include a sample transfer means
The same thing as 50-60 is adopted.

In FIG. 1, when the processing apparatus 10 is an apparatus for processing a sample using plasma under reduced pressure, for example, the sample processing atmosphere of the processing apparatus 10 and the sample to be processed by the processing apparatus 10 are different from each other. The space to be transported to 10 and the space to which the processed sample is transported can be communicated and shut off.
The sample post-processing atmosphere of the plasma post-processing apparatus 20, the space in which the processed sample is transported, and the space in which the post-processed sample is transported can be communicated with or blocked. The space where the post-processed sample is transported,
The sample wet processing atmosphere, the space in which the wet processed sample is transported, the sample drying processing atmosphere of the drying processing device 40, and the space in which the dried sample is transported may be in a state where communication is maintained, Each of them may be able to communicate and shut off.

In FIG. 1, a processing station is provided in a sample processing atmosphere of the processing apparatus 10. When the processing apparatus 10 is an apparatus for processing a sample using plasma under reduced pressure, the processing station is a sample stage (not shown).
A sample stage is used as a processing station in each processing atmosphere of the plasma post-processing apparatus 20, the wet processing apparatus 30, and the drying processing apparatus 40.
(Not shown) are provided. One or more samples can be placed on each sample stage. In addition, the processing device 10,
In the plasma post-processing apparatus 20, each sample stage may be used as one of the components forming the sample processing atmosphere.

2 and 3, a more specific and detailed description will be given. In this case, in FIGS. 2 and 3, as the processing apparatus, in this case, an apparatus for processing a sample under reduced pressure using plasma is used.

2 and 3, four openings 10la to 10lb are formed in the top wall of the buffer chamber 100 in this case. An exhaust nozzle 102a is provided on the bottom wall of the buffer chamber 100. One end of an exhaust pipe (not shown) is connected to the exhaust nozzle 102a, and the other end of the exhaust pipe is connected to an intake port of a vacuum exhaust device (not shown) such as a vacuum pump. The planar shape of the buffer chamber 100 is substantially L-shaped. Buffer room 10
0 is in this case made of stainless steel. When the buffer chamber 100 is viewed in a plan view, the closing portions 10la to 10lC are formed in order from the long side end to the short side side of the L shape, and the closing portion 10ld
Is formed on the short side of the L-shape. Opening 10la ~ 10ld
Has a predetermined distance from adjacent openings. arm
81 is provided rotatably in the buffer chamber 10. The arm 81 is rotatable in the same plane in the buffer chamber 10. A sample scooping tool 82 is provided at the rotating end of the arm 81. The plane shape of the sample rake tool 82 is substantially this shape. The arm 81 is provided such that the rotation trajectory substantially at the center of the sample scooping tool 82 substantially corresponds to the center of each of the openings 10la and 10lb. That is, the rotation fulcrum of the arm 81 is positioned at such a position that the approximate center of the sample rake 82 draws the above-mentioned rotation locus. The rotation fulcrum of the arm 81 has an upper end protruding into the buffer chamber 100 at that position, and a lower end protruding out of the buffer chamber 100 so that the bottom wall of the buffer chamber 100 has It is provided at the upper end of a rotating shaft 83 that is rotatably provided while maintaining airtightness.
The lower end of the rotating shaft 83 is located outside the buffer chamber 100.
Are connected to a rotation drive means (not shown) arranged corresponding to the bottom wall of the.

An arm 51 is provided rotatably in the buffer chamber 100 at a position different from that of the arm 81. Arm 51
Is rotatable in the same plane in the buffer chamber 100, and in this case, in the same plane as the rotation plane of the arm 81. A sample scooping tool 52 is provided at the rotating end of the arm 51. The plane shape of the sample rake tool 52 is
It is almost the same as that of. The arm 51 is provided such that the rotation trajectory substantially at the center of the sample scooping tool 52 substantially corresponds to the center of each of the openings 10 lb to 10 ld. That is, the rotation fulcrum of the arm 51 is positioned at such a position that the approximate center of the sample rake tool 52 draws the above-described rotation locus. The rotation fulcrum of the arm 51 has an upper end protruding into the buffer chamber 100 at that position, and a lower end protruding outside the buffer chamber 100 so that the bottom wall of the buffer chamber 100 It is provided at the upper end of a rotating shaft 53 that is rotatably provided while maintaining airtightness. The lower end of the rotation shaft 53 is connected to a rotation drive unit, for example, a drive shaft of a motor 54 disposed outside the buffer chamber 100 and corresponding to the bottom wall of the buffer chamber 100.

In FIG. 3, the sample stage 110 and the lid member 111 are
la sandwiched between. The sample stage 110 has a sample setting surface on its surface. The planar shape and dimensions of the sample stage 110 are as follows:
The shape and dimensions are sufficient to close the opening 10la. Sample stage 11
Numeral 0 is provided in the buffer chamber 100 so that the closing part 10la can be opened and closed, and in this case, it can be moved up and down. In this case, the elevating shaft 112 has the center of the opening 10la as a substantially axial center, the upper end thereof protruding into the buffer chamber 100, and the lower end protruding out of the buffer chamber 100, thereby forming the bottom wall of the buffer chamber 100. The airtightness inside the buffer chamber 100 is maintained while the airtightness is maintained. The sample stage 110 has an elevating shaft 1
It is provided substantially horizontally at the upper end of the twelve. The lower end of the elevating shaft 112 is connected to elevating drive means, for example, a cylinder rod of a cylinder 113, which is arranged outside the buffer chamber 100 and corresponding to the bottom wall of the buffer chamber 100. An airtight seal ring (not shown) is provided on the inner peripheral surface of the buffer chamber 100 facing the outer peripheral edge of the upper surface of the sample stage 110 or the outer peripheral green, that is, the inner peripheral surface of the buffer chamber 100 around the entrance 10la. .

The sample stage 110 is provided with a sample delivery tool (not shown). That is, the sample delivery tool is provided so as to be able to move up and down between a position below the sample setting surface of the sample stage 110 and a position protruding outward from the entrance 10la with the opening 10la closed by the sample stage 110. Have been. The planar shape and dimensions of the cover member 111 are shapes and dimensions sufficient to close the opening 10la. The lid member 111 is provided outside the buffer chamber 100 so that the opening 10la can be opened and closed, and in this case, can be moved up and down.
In this case, the elevating shaft 114 is provided so as to be vertically movable outside the buffer chamber 100 with the axis of the elevating shaft 112 substantially coincident with the axis. The lid member 111 is provided substantially horizontally at the lower end of the elevating shaft 114. The upper end of the elevating shaft 114 has a lid member outside the buffer chamber 100.
It is connected to a lifting / lowering drive means disposed above the position 111, for example, a cylinder rod of the cylinder 115. Lid member 1
11 or the buffer chamber 10 facing the outer peripheral edge of the lower surface.
An airtight seal ring (not shown) is provided on the outer surface of the top wall of the buffer chamber 100 around the opening 10la.

In FIG. 3, a discharge tube 11 having a substantially hemispherical shape in this case is airtightly provided on the top wall of the buffer chamber 100. The shape and dimensions of the open part of the discharge tube 11 are substantially the same as those of the opening 10 lb, and the open part of the discharge tube 11 is made substantially coincident with the opening 10 lb. The discharge tube 11 is formed of an electrically insulating material such as quartz. Outside the discharge tube 11, the discharge tube
A waveguide 12a is provided, including 11 inside. The magnetron 13 as a microwave oscillating means and the waveguide 12a are connected by a waveguide 12b. The waveguides 12a and 12b are formed of an electrically conductive material. The waveguide 12b is an isolator 1
2c and a power monitor 12d. Outside the waveguide 12d, a solenoid coil 14 as a magnetic field generating means is mounted. In a space defined by the inside of the buffer chamber 100 and the inside of the discharge tube 11, a sample table 15 is provided so as to be movable up and down. Lifting shaft 16
In this case, the axis of the discharge tube 11 is set to be substantially the axis, and the upper end is projected into the buffer chamber 100, and the lower end is projected outside the buffer chamber 100, so that the discharge tube 11 has the bottom wall. The buffer chamber 100 is provided so as to be able to move up and down while maintaining airtightness.

The sample table 15 has a sample setting surface on its surface. The planar shape and dimensions of the sample table 15 are shapes and dimensions that can be inserted through the opening 101b. The sample table 15 is provided substantially horizontally at the upper end of the elevating shaft 16 with the sample setting surface as the upper surface.
The lower end of the elevating shaft 16 is located outside the buffer chamber 100.
Is connected to a lifting / lowering drive means disposed corresponding to the bottom wall of the cylinder, for example, a syringe rod of a cylinder (not shown).
The lower end of the elevating shaft 16 is a bias power supply in this case. For example, it is connected to a high frequency power supply 18. High frequency power supply 18
Is installed outside the buffer chamber 100 and is grounded. In this case, the sample table 15 and the elevating shaft 16 are in an electrically suitable state, and the buffer chamber 100 and the elevating shaft 16 are electrically insulated.

The sample table 15 is provided with a sample delivery tool (not shown). In other words, the sample delivery tool is located at a position below the sample setting surface of the sample table 15 and the sample setting surface of the sample table 15b
In a state of being further lowered, it is provided so as to be able to move up and down above and below these sample scooping tools 82 and 52.

The sample stage 15 has a structure capable of adjusting the temperature. For example, a heating medium flow path is formed inside the sample table 15, and a cooling medium as a heating medium, for example, a cooling medium such as cooling water, liquid ammonium or liquid nitrogen, hot water, or a heating medium is formed in the flow path. A heating medium such as a gas is supplied. Further, for example, the sample stage 15 is provided with a heating means such as a heater.

Outside the sample table 15 and the elevating shaft 16, flanges 120 and 121 are provided in the buffer chamber 100. The inner diameters and the shapes of the flanges 120 and 121 substantially match those of the opening 10 lb. Flange 120 is for discharge tube 11, sample table 1
5. It is provided airtightly on the inner surface of the bottom wall of the buffer chamber 100 with the axis of the elevating shaft 16 being substantially at the center. The flange 121 is arranged to face the flange 120. A metal bellows 122, which is a telescopic shielding means, is provided across the flanges 120 and 121. An elevating shaft (not shown) has a buffer chamber 100 at its upper end.
The lower end portion of the buffer chamber 100 is protruded out of the buffer chamber 100, and is provided on the bottom wall of the buffer chamber 100 so as to be movable up and down while maintaining the airtightness in the buffer chamber 100. Flange
121 is connected to the upper end of the elevating shaft. The lower end of the elevating shaft is connected to an elevating drive unit, for example, a cylinder rod (not shown) arranged outside the buffer chamber 100 and corresponding to the bottom wall of the buffer 100. Flange 121
An airtight seal ring (not shown) is provided on the upper surface of the buffer chamber 100 or on the inner surface of the top wall of the buffer chamber 100 facing the surface, that is, on the inner surface of the top wall of the buffer chamber 100 around the opening 10 lb.

An exhaust nozzle 102b is provided on the bottom wall of the buffer chamber 100 inside the flange 120. Exhaust nozzle
One end of an exhaust pipe (not shown) is connected to 102b, and the other end of the exhaust pipe is connected to an intake port of a vacuum exhaust device (not shown) such as a vacuum pump. On / off valve (not shown) on the exhaust pipe
And a pressure control valve, for example, a variable resistance valve (not shown). One end of a gas introduction tube (not shown) is connected to the processing gas source (not shown), and the other end is opened in the discharge tube 11 or the like. The gas introduction pipe is provided with an on-off valve and a gas flow controller (not shown).

In FIG. 3, the plasma post-processing chamber 21 is a buffer chamber.
It is airtightly laid on 100 top walls. Plasma post-treatment chamber 2
The shape and dimensions of the open portion 1 are substantially the same as those of the open portion 101c, and the open portion of the plasma post-processing chamber 21 is made substantially coincident with the closed portion 101c. A sample table 22 is provided in a space defined by the inside of the buffer chamber 100 and the inside of the plasma post-processing chamber 21. In this case, the support shaft 23 has the axis of the plasma post-processing chamber 21 substantially as the axis, the upper end of which is projected into the buffer chamber 100, and the lower end of which is projected outside the buffer chamber 100. The airtight inside of the buffer chamber 100 is provided on the bottom wall of the buffer chamber 100.

The sample table 22 has a sample setting surface on its surface. The planar shape and size of the sample stage 22 are smaller than the opening 101c in this case. The sample stage 22 is provided substantially horizontally at the upper end of the support shaft 23 with the sample setting surface as the upper surface. The sample setting surface of the sample stage 22 is located below the sample rake tool 52 of the arm 51. The sample stage 22 is provided with a sample delivery tool (not shown). That is,
The sample delivery tool is provided to be able to move up and down between a position below the sample setting surface of the sample table 22 and a position above the sample scooping tool 52 of the arm 51.

Outside the sample stage 22 and the support shaft 23, flanges 125 and 126 are provided in the buffer chamber 100. The inner diameter and the shape of the flanges 125 and 126 are substantially the same as those of the entrance 101c. The flange 125 is installed in the plasma post-processing chamber 2.
1. Airtightly provided on the inner surface of the bottom wall of the buffer chamber 100 about the axis of the sample stage 22 and the support shaft 23 as a center. Flange 126
Are arranged facing the funnel 125. A gold layer bellows 127, which is a telescopic shielding means, is provided across the flanges 125 and 126. An elevating shaft (not shown) has an upper end protruding into the buffer chamber 100 and a lower end
00 so that the buffer chamber 1
It is provided so as to be able to move up and down while maintaining the airtightness in 00. The flange 126 is connected to the upper end of the elevating shaft.

The lower end of the elevating shaft is connected to elevating drive means, for example, a cylinder rod of a cylinder (not shown) arranged outside the buffer chamber 100 and corresponding to the bottom wall of the buffer chamber 100. An airtight seal ring (not shown) is provided on the upper surface of the flange 126 or on the inner surface of the top wall of the buffer chamber 100 facing the surface, that is, on the inner surface of the top wall of the buffer chamber 100 around the opening 10lc. An exhaust nozzle 102c is provided on the bottom wall of the buffer chamber 100 inside the flange 125. One end of an exhaust pipe (not shown) is connected to the exhaust nozzle 102c, and the other end of the exhaust pipe is connected to a vacuum exhaust device such as a vacuum pump.
(Not shown).

In FIG. 3, the sample stage 130 and the lid member 131 have the opening 10
1d is provided. The sample stage 130 has a sample setting surface on its surface. The planar shape and dimensions of the sample stage 130 are sufficient to close the opening 101d. Sample table 130
Is provided in the buffer chamber 100 so that the opening 101d can be opened and closed, and in this case, can be moved up and down. In this case, the elevating shaft 132 has the center of the opening 101d as a substantially axial center, the upper end of which is projected into the buffer chamber 100, and the lower end of which is projected outside the buffer chamber 100, thereby forming the bottom wall of the buffer chamber 100. The airtightness inside the buffer chamber 100 is maintained while the airtightness is maintained.

The sample table 130 is provided substantially horizontally on the upper end of the elevating shaft 132 with the sample setting surface as the upper surface. Vertical axis 1
The lower end of 32 is a lifting / lowering drive means arranged outside the buffer chamber 100 and corresponding to the bottom wall of the buffer chamber 100, for example, a cylinder.
It is connected to 133 cylinder rods. An airtight seal ring (not shown) is provided on the inner peripheral surface of the upper surface of the sample table 130 or on the inner surface of the upper wall of the buffer chamber 100 facing the outer peripheral edge, that is, on the inner surface of the upper wall of the buffer chamber 100 around the opening 101d. . The sample table 130 is provided with a sample delivery tool (not shown). That is, the sample delivery tool is provided so as to be able to move up and down between a position below the sample setting surface of the sample stage 130 and a position protruding outward from the closing portion 101d with the opening 101d closed by the sample stage 130. Have been. The planar shape and dimensions of the lid member 131 are provided outside the buffer chamber 100 so that the opening 101d can be opened and closed. The lifting shaft 134 is
In this case, the axis of the elevating shaft 132 is substantially coincident with the axis, and the elevating shaft 132 is provided outside the buffer chamber 100 so as to be vertically movable. Lid member 131
Is provided substantially horizontally at the lower end of the elevating shaft 134. The upper end of the elevating shaft 134 is connected to an elevating drive unit, for example, a cylinder rod of a cylinder 135, which is disposed outside the buffer chamber 100 and above the lid member 131. An airtight seal ring (not shown) is provided on the outer peripheral surface of the lower surface of the lid member 131 or the outer surface of the top wall of the buffer chamber 100 facing the outer peripheral edge, that is, the outer surface of the top wall of the buffer chamber 100 around the opening 101d. .

2 and 3, a cassette table 140 is provided outside the buffer chamber 100 so as to be able to move up and down corresponding to the longitudinal side surface of the L-shaped long side of the buffer chamber 100. Outside the buffer chamber 100, a guide 141 is provided linearly along the widthwise side surface of the L-shaped long side of the buffer chamber 100. In this case, the end of the guide 141 on the side of the cassette table 140 is extended to correspond to the center of the cassette table 140. The arm 142, in this case,
A linear member, one end of which is connected to the guide 141 by the guide 1
It is provided so as to be able to reciprocate guided by 41. arm
A sample scooping tool 143 is provided at the other end of 142.
The cassette table 140 has a vertical
It is provided substantially horizontally at the upper end of 44. The lower end of the elevating shaft 144 is provided to the elevating drive means 145.

2 and 3, the wet processing chamber 31, the drying processing chamber 41, and the sample recovery chamber 15 are provided outside the buffer chamber 100 in this case.
0 is provided. In this case, the wet processing chamber 31, the drying processing chamber 41, and the sample collection chamber 150
They are sequentially arranged in series along the side walls on the c and 101d sides. Of these, the wet processing chamber 31 is provided at a position closest to the opening 101d.

2 and 3, a sample stage 32 is provided in the wet processing chamber 31. In this case, the support shaft 33 has an upper end protruding into the wet processing chamber 31 and a lower end protruding outside the wet processing chamber 31 so as to be provided on the bottom wall of the wet processing chamber 31. The chamber 31 is rotatably provided while maintaining airtightness and watertightness. The lower end of the support shaft 33 is connected to a rotation drive means, for example, a rotation shaft of a motor (not shown). The sample stage 32 has a sample setting surface on its surface. Sample table 32
Is provided substantially horizontally on the upper end of the support shaft 33 with the sample installation surface as the upper surface. The sample setting surface of the sample stage 32 is an arm
It is located below the sample scooping tool 61. The sample table 32 is provided with a sample delivery tool (not shown).
That is, the sample delivery tool is provided so as to be able to move up and down between a position below the sample setting surface of the sample table 32 and a position above the sample scooping tool 52 of the arm 61.

In the wet processing chamber 31, a processing liquid supply pipe (not shown) is provided so as to be able to supply a processing liquid toward the sample setting surface of the sample stage 32. A processing liquid supply device (not shown) is provided outside the wet processing chamber 31. The processing liquid supply pipe is connected to the processing liquid supply device. A waste liquid discharge pipe (not shown) is connected to the wet processing chamber 31. Also, in this case,
An inert gas introducing means (not shown) for introducing an inert gas such as a nitrogen gas into the wet processing chamber 31 is provided.

2 and 3, the arm 61 is rotatably provided so as to correspond to the sample table 130 and the sample table 32. The arm 61 is rotatable in the same plane outside the buffer chamber 100. A sample scooping tool 62 is provided at the rotating end of the arm 61. The plan shape of the sample rake 62 is substantially the same as those of the sample rakes 52 and 82. The arm 61 is provided such that the rotation locus of the center of the sample rake 62 substantially corresponds to the center of each of the sample tables 130 and 32. That is, the rotation fulcrum of the arm 61 is positioned at such a position that the approximate center of the sample rake 62 draws the above-mentioned rotation locus.
In this case, the rotation fulcrum of the arm 61 is provided at the upper end of a rotation shaft 63 rotatably provided outside the buffer chamber 100 and outside the wet processing chamber 31. The lower end of the rotating shaft 63 is connected to a rotating drive means, for example, a driving shaft of a motor 64. Wet processing chamber 31 corresponding to the rotation area of arm 61 and sample scooping tool 62
An opening 34 is formed in the side wall of. The size and position of the opening 34 do not hinder the entry and retreat of the arm 61 and the sample scooping tool 62 into the wet processing chamber 31.
In this case, the opening 34 can be opened and closed by opening and closing means (not shown).

2 and 3, a sample table 42 is provided in the drying processing chamber 41. The sample table 42 has a sample setting surface on its surface. The sample stage 42 is provided substantially horizontally on the bottom wall of the drying chamber 41 with the sample setting surface as the upper surface. In this case, a heater 43 is used as a heating unit. The heater 43 is provided on the back surface of the sample stage so as to heat the sample stage. The heater 43 is connected to a power supply (not shown). The sample setting surface of the sample stage 42 is located below the sample rake 72 of the arm 71. The sample table 42 is provided with a sample delivery tool (not shown). That is, the sample delivery tool is positioned between the position below the sample setting surface of the sample table 42 and the arm 71.
The sample scooping tool 72 is provided so as to be able to move up and down with respect to a position above the sample scooping tool 72. In this case, the sample delivery tool of the sample table 32 can also be moved up and down between a position below the sample setting surface of the sample table 32 and a position above the sample scooping tool 72 of the arm 71. Also,
In this case, an inert gas introducing means (not shown) for introducing an inert gas such as a nitrogen gas into the drying processing chamber 41 is provided.

In FIGS. 2 and 3, a cassette table 151 is provided in the sample collection chamber 150. The elevating shaft 152 has an upper end protruding into the sample collecting chamber 150 and a lower end protruding outside the sample collecting chamber 150, and is provided on the bottom wall of the sample collecting chamber 150 so as to be able to move up and down. The cassette table 151 is provided substantially horizontally at the upper end of the elevating shaft 152 with the cassette installation surface as the upper surface. The lower end of the elevating shaft 152 is provided to the elevating drive means 153. In this case, an inert gas introducing means (not shown) for introducing an inert gas such as a nitrogen gas into the sample recovery chamber 150 is provided.

In FIG. 2, a guide 73 is provided along the inner wall of the wet processing chamber 31, the dry processing chamber 41, and the sample recovery chamber 150. The guide 73 has a linear shape. In other words, in this case, a line passing through the center of each of the sample tables 32 and 42 and the cassette table 151 is a straight line, and is guided substantially parallel along the straight line.
73 are provided. In this case, the arm 71 is a linear member, and one end of the arm 71 is guided by the guide 73 by the guide 73 so as to be able to reciprocate. At the other end of the arm 71, a sample scooping tool 72 is provided. In FIGS. 2 and 3, the arm 71 and the sample scooping device are used to prevent the arm 71 and the sample scooping tool 72 from entering and retracting into the wet processing chamber 31, the drying processing chamber 41, and the sample recovery chamber 150. Openings (not shown) on the side walls of each chamber corresponding to the reciprocating range of the tool 72
Are formed. In addition, these openings are opened and closed
It can be opened and closed by (not shown). The sample collection chamber 150 is provided with an opening and a door for loading and unloading the cassette (both are not shown).

2 and 3, a cassette 160 is installed on the cassette table 140. In this case, the cassette 160 is capable of stacking a plurality of samples 170 one by one in the height direction and accommodating the same.
One is open. The cassette 160 is placed on the cassette table 140 with the sample removal open side face toward the opening 101a. The cassette table 140 on which the cassette 160 is installed is lowered, for example, in this state. The lowering of the cassette table 140 is stopped at a position where the sample 170 stored in the uppermost stage of the cassette 160 can be scooped by the sample scooping tool 143. on the other hand,
The openings 101a and 101d are closed by the sample stages 110 and 130, respectively, and in this state, the inside of the buffer chamber 100 is evacuated to a predetermined pressure by operating the evacuation device. Thereafter, the lid member 111 is raised, and the lifting is stopped at a position where the sample scooping tool 143 having the sample 170 scooped does not obstruct the opening 101a.

In this state, the arm 142 is moved toward the cassette 160, and the movement corresponds to the movement of the sample holder 143 corresponding to, for example, the back surface of the sample 170 stored in the lowermost stage of the cassette 160. It stops when it reaches the position where Thereafter, the cassette 160 is raised by raising the cassette table 140 as much as possible to scoop the sample 170 with the sample scooping tool 143. As a result, the sample 170 is scooped by the sample scooping tool 143 and transferred to the sample scooping tool 143. With the sample scooping tool 143 receiving the sample 170, the arm 142
Is moved toward the opening 101a.

Such movement of the arm 142 is stopped when the sample scooping tool 143 having the sample 170 reaches a position corresponding to the opening 101a. In this state, the sample delivery tool on the sample stage 110 is raised, whereby the sample 170 is delivered from the sample scooping tool 143 to the sample delivery tool. Thereafter, the sample scooping tool 143 is retracted by the movement of the arm 142 to a position where the lowering of the sample delivery tool that has received the sample 170 is not hindered. Thereafter, the sample delivery tool having the sample is lowered. As a result, the sample 170 is moved from the sample delivery tool to the sample stage 110.
And placed on the sample setting surface. Thereafter, the lid member 111 is lowered. Thereby, the opening 101a is
It is also closed by the lid member 111, and the communication with the outside is cut off. Thereafter, the sample stage 110 having the sample 170 is lowered, and the lowering is performed by moving the sample stage 110 to a position where the sample 170 can be transferred between the sample delivery tool of the sample stage 110 and the sample rake tool 82 of the arm 81. Stopped when it reaches. -, The flanges 120, 121 and the gold delivery rose 122 are lowered so as not to hinder the rotation of the arm 81 and the sample scooping tool 82,
The sample table 15 has a sample delivery tool and a sample rake tool of the arm 81.
The sample 170 is lowered to a position where the sample 170 can be transferred to and from the position.

In this state, the sample delivery tool of the sample stage 110 is raised so as to deliver the sample 170 to and from the sample scooping tool 82 of the arm 81. After that, by rotating the arm 81 in the direction of the sample stage 110, the sample rake tool 82
The sample 170 is positioned so that it can be scooped, corresponding to the back surface of the sample 170 of the sample delivery device. In this state, the sample delivery device of the sample stage 110 is lowered, thereby
70 is transferred from the sample delivery tool of the sample stage 110 to the sample scooping tool 82 of the arm 81.

Sample scooping tool 8 which scoops sample 170
By rotating the arm 81 in the direction of the sample stage 15, the arm 2 passes between the flange 121 and the inner surface of the top wall of the buffer chamber 100 and is rotated in the direction of the sample stage 15. The sample stage 110 is raised again, whereby the opening 101a is closed by the sample stage 110. The rotation of the sample rake tool 82 as described above is stopped when the sample rake tool 82 reaches a position where the sample 170 can be transferred between the sample rake tool 82 and the sample delivery tool of the sample table 15. . In this state, by raising the sample delivery tool of the sample stage 15, the sample 170 is delivered from the sample scooping tool 82 to the sample delivery tool of the sample stage 15. Thereafter, the sample scooping tool 82 is caused to stand by for the next sample transfer between the sample tables 110 and 15 by rotating the arm 81 to a position between the openings 101a and 101b. Then, flange 12
1.The gold delivery rose 122 is raised, whereby the inside of the buffer chamber 100 and the inside of the discharge tube 11 inside the metal bellows 122 are
The communication with the inside of the buffer chamber 100 outside the metal bellows 122 is cut off. Further, by lowering the sample delivery device of the sample stage 15 that has received the sample 170, the sample 170 is transferred from the sample delivery device of the sample stage 15 to the sample stage 15 and set on the sample setting surface of the sample stage 15. You.

Sample stage 1 on which sample 170 is set on the sample setting surface
5 can raise a space, which is cut off from the inside of the buffer chamber 100 outside the metal bellows 122, to a predetermined position. A predetermined processing gas is introduced at a predetermined flow rate from a processing gas source into a space outside the metal bellows 122 and in communication with the inside of the buffer chamber 100. The portion of the processing gas introduced into the space is discharged out of the space by the operation of the vacuum exhaust device and the variable resistance valve. Thereby, the pressure in the space is adjusted to a predetermined etching processing pressure.

On the other hand, from the magnetron 13, in this case, 2.
A microwave of 45 GHz is oscillated. The oscillated microwave propagates through the waveguides 12b and 12a via the isolator 12c and the power monitor 12d, and is absorbed by the discharge tube 11, whereby a high-frequency electric field including the microwave is generated. At the same time, by operating the solenoid coil 14, a magnetic field is generated. The processing gas in a space that is cut off from the inside of the buffer chamber 100 outside the metal bellows 122 is turned into plasma by the synergistic action of the high-frequency electric field including the microwave and the magnetic field. Sample placed on sample stage 15
170 is etched using this plasma.

The rotation of the sample rake tool 52 causes the sample rake tool 52 to reach a position where the etched sample 170 can be transferred between the sample rake tool 52 and the sample transfer tool of the sample table 15. Will be stopped at that point. In this state,
The sample receiving device 15 is lowered, so that the etched sample 170 is transferred from the sample receiving device on the sample stage 15 to the sample scooping device 52 on the arm 51. The sample scooping tool 52 that has scooped the etched sample 170 receives the flange 121 by rotating the arm 51 toward the sample stage 22.
And between the inner surface of the top wall of the buffer chamber 100 and rotated in the direction of the sample stage 22. Note that the etched sample 170
A new sample in the cassette 160 is set on the sample table 15 from which the above operation has been removed by performing the above operation. The new sample placed on the sample stage 15 is continuously etched by performing the above operation. On the other hand, the etched sample
Before or during the above-described rotation of the sample rake 52 having the 170, the flange 126 and the metal bellows 127 are attached to the arm 51.
And, it is lowered so as not to hinder the rotation of the sample scooping tool 52. High frequency power supply 18 during etching process of sample 170
Is operated, a predetermined high-frequency power is applied to the sample table 15 via the elevating shaft 16, and a predetermined high-frequency bias is applied to the sample 170. The sample 170 is adjusted to a predetermined temperature via the sample table 15.

When the etching of the sample 170 is completed, the magnetron 13, the solenoid coil 14, the high frequency power supply
The operation of 18 and the like is stopped, and the introduction of the processing gas into the space that is disconnected from the inside of the buffer chamber 100 outside the metal bellows 122 is stopped. After that, after the space is sufficiently evacuated, the on-off valve constituting the decompression / evacuation means for the space is closed. Thereafter, the flange 121 and the metal bellows 122 are lowered so as not to hinder the rotation of the arm 51 and the sample rake tool 52, and the sample table 15 is connected to the sample delivery tool and the sample rake tool 52 of the arm 51. Is lowered to a position where the etched sample 170 can be delivered.

Thereafter, the sample delivery device of the sample table 15 is
Samples that have been etched between 51 and sample rake 52
170 is raised to be deliverable. In this state, the sample rake tool 52 is rotated in the direction of the sample table 15 by rotating the arm 51 in the direction of the sample table 15 to pass between the flange 121 and the inner surface of the top wall of the buffer chamber 100, Further, the sample scooping tool 52 having the sample 170 having been subjected to the etching treatment is rotated by further rotating the arm 51 in the direction of the sample table 22 so that the flange is formed.
It passes between 121 and the inner surface of the top wall of the buffer chamber 100 and is further rotated in the direction of the sample table 22. Such rotation of the sample rake tool 52 is performed when the sample rake tool 52 reaches a position where the etched sample 170 can be transferred between the sample rake tool 52 and the sample transfer tool of the sample stage 22. Stopped. In this state, the sample receiver of the sample stage 22 is raised, whereby the etched sample 170 is transferred from the sample rake tool 52 to the sample receiver of the sample stage 22.

Thereafter, the sample scooping tool 52 is caused to stand by at this position by rotating the arm 51 to a position between the openings 101c and 101d. Thereafter, the flange 126 and the metal bellows 127 are raised, whereby the metal bellows 1
The inside of the buffer chamber 10 and the plasma post-processing chamber 21 inside 27 are blocked from the connection with the inside of the buffer chamber 100 outside the metal bellows 127. Further, by lowering the sample delivery tool of the sample stage 22 that has received the etched sample 170, the etched sample 170 is transferred from the sample delivery tool of the sample stage 22 to the sample stage 22, and Installed on 22 sample setting surfaces.

A predetermined amount of a post-processing gas is introduced into a space that is disconnected from the inside of the buffer chamber 100 outside the metal bellows 127, and a part of the post-processing gas is exhausted from the space. Thereby, the pressure in the space is adjusted to a predetermined post-processing pressure. Thereafter, the post-processing gas in the space is turned into plasma by the action of a high-frequency electric field including microwaves in this case. The etched sample 170 placed on the sample stage 22 is post-processed using this plasma. When the post-processing of such an etched sample is completed, the post-processing gas is introduced into a space that is cut off from the inside of the buffer chamber 100 outside the metal bellows 127, and the post-processing gas is turned into plasma. Stopped.

Thereafter, the flange 126 and the metal layer bellows 127
Is lowered so as not to hinder the rotation of the arm 51 and the sample scooping tool 52. The sample scooping tool 52 that is kept on standby between the openings 101c and 101d is at a position where the elevation of the post-processed sample 170 by the sample delivery tool of the sample stage 22 is not hindered, and up to a position where the sample stage 22 has passed. Rotated. In this state, the sample delivery tool of the sample stage 22 is raised, whereby the post-processed sample 170
Is transferred to the sample delivery tool of the sample stage 22. Then arm
The sample rake 52 is rotated by rotating the sample
Corresponds to the back surface of the post-processed sample 170 included in the sample delivery tool of the sample stage 22, and is positioned so that the sample 170 can be scooped. In this state, the sample delivery tool of the sample stage 22 is lowered, whereby the post-processed sample 170 is moved to the sample stage 22.
Is transferred to the sample scooping tool 52 of the arm 51.

The sample scooping tool 52, which has scooped the post-processed sample 170, passes between the flange 126 and the inner surface of the top wall of the buffer chamber 100 by rotating the arm 51 toward the sample table 130. It is rotated in the direction of the table 130. The sample table 22 from which the post-processed sample 170 has been removed is provided with the next sample subjected to the etching process, and the sample is continuously post-processed using plasma. On the other hand, before or during the above-described rotation of the sample rake tool 52 having the post-processed sample 170, the sample table 130 is connected to the sample delivery tool and the arm 51.
The sample 170, which has been post-processed with the sample scooping tool 52, is lowered to a position where it can be transferred. The rotation of the sample rake tool 52 as described above is performed when the sample rake tool 52 reaches a position where the post-processed sample 170 can be transferred between the sample rake tool 52 and the sample transfer tool of the sample stage 130. Stopped at In this state, the sample receiving device of the sample stage 130 is raised, whereby the post-processed sample 170 is transferred from the sample scooping device 52 to the sample transferring device of the sample stage 130.

After that, the sample scooping tool 52 is caused to stand by at this position by rotating the arm 51 to a position between the openings 101b and 101c so as to transport the next etched sample to the sample table 22. . Thereafter, the next sample subjected to the etching treatment is set on the sample stage 22 from which the post-processed sample 170 has been removed, and the sample is continuously post-processed using plasma.

On the other hand, the sample delivery tool of the sample stage 130 that has received the post-processed sample 170 is lowered. As a result, the post-processed sample 170 is transferred from the sample delivery tool of the sample stage 130 to the sample stage 130 and set on the sample setting surface.
Thereafter, the sample stage 130 having the post-processed sample 170 is raised, whereby the opening 101d is airtightly closed by the sample stage 130. In this state, the lid member 131 is raised. The rise of the lid member 131 does not hinder the rise of the sample delivery tool of the sample stage 130, and the sample rake tool 62 of the arm 61 is used for the post-processed sample 170 with the sample delivery tool of the sample stage 130. It stops when the lid member 131 rises to a position where it does not hinder reaching the receivable position. In this state, first, the sample delivery tool of the sample stage 130 is raised.
As a result, the post-processed sample 170 is transferred from the sample stage 130 to the sample delivery tool of the sample stage 130. Thereafter, the sample rake tool 62 is rotated toward the sample table 130 by rotating the arm 61 in the direction of the sample table 130. Such rotation of the sample rake tool 62 has a position at which the post-processed sample 170 can be transferred between the sample rake tool 62 and the sample delivery tool of the sample stage 130, that is, the sample delivery tool of the sample stage 130 has At the position corresponding to the back surface of the post-processed sample 170, the sample scooping tool 62
Is stopped at the point where

Thereafter, the sample delivery tool of the sample stage 130 is lowered. As a result, the post-processed sample 170 is transferred from the sample delivery tool on the sample stage 130 to the sample scooping tool 62. Sample scooping tool 62 that has scooped the post-processed sample 170
By rotating the arm 61 in the direction of the wet processing chamber 31,
It is rotated toward the sample stage 32 in the wet processing chamber 31. On the other hand, the sample delivery tool of the sample stage 130 that has passed the post-processed sample 170 to the sample scoop 62 is further lowered to a position below the sample installation surface of the sample stage 130. Then, cover member 131
Is lowered. As a result, the opening 101d is airtightly closed by the lid member 131. In this state, the sample stage 130 is lowered again, and the lowered sample stage 1
30 is provided with the next post-processed sample.

On the other hand, the rotation of the sample rake tool 62 having the post-processed sample 170 is moved to a position where the post-processed sample 170 can be transferred between the sample rake tool 62 and the sample delivery tool of the sample stage 32. The operation is stopped when the sample scooping tool 62 is reached. In this state, the sample delivery tool of the sample stage 32 is raised. As a result, the post-processed sample 170 is transferred from the sample scooping tool 62 to the sample delivery tool on the sample stage 32. Post-treated sample 17
The sample scooping tool 62 that has passed 0 is retracted outside the wet processing chamber 31 in preparation for receiving the next post-processed sample. Thereafter, the opening 34 is closed.

On the other hand, the sample delivery tool of the sample stage 32 that has received the post-processed sample 170 is lowered. This allows
The post-processed sample 170 is transferred from the sample delivery tool of the sample stage 32 to the sample stage 32 and set on the sample setting surface. Thereafter, the processing liquid is supplied from the processing liquid supply device through the processing liquid supply pipe at a predetermined flow rate, and the post-processed sample 17 is set on the sample stage 32.
It is supplied toward the surface to be treated 0. At the same time, the post-processed sample 170 is rotated by the operation of the motor.
By such an operation, wet processing of the post-processed sample 170 is performed. Note that, for example, nitrogen gas is introduced into the wet processing chamber 31 by an inert gas introducing means, whereby the wet processing is performed in a nitrogen gas atmosphere. Also,
The waste liquid generated by the wet processing is discharged out of the wet processing chamber 31 through a waste liquid discharge pipe. When such wet processing ends, supply of the processing liquid, rotation of the sample 170, and the like are stopped. Thereafter, the sample delivery tool of the sample stage 32 is raised.

The wet-processed sample 170 is transferred from the sample table 32 to the sample delivery tool during the ascent. The lift of the sample delivery device of the sample stage 32 that has received the wet-processed sample 170 is stopped when the wet-processed sample 170 reaches a position where the wet-processed sample 170 can be transferred to and from the sample scooping tool 72. In this state, the sample scooping tool 72 is moved toward the sample table 32 via the arm 71. The movement is stopped when the sample scooping tool 72 reaches a position where the wet-processed sample 170 can be transferred between the sample scooping tool 72 and the sample delivery tool of the sample stage 32. Thereafter, the sample delivery tool of the sample stage 32 is lowered. Thus, the wet-processed sample 170 is transferred to the sample scooping tool 72. The sample delivery tool of the sample stage 32 from which the wet-processed sample 170 has been removed is prepared for receiving the next post-processed sample.

The sample scooping tool 72 having the wet-processed sample 170 is further moved from the clear processing chamber 31 to the drying processing chamber 41 through the opening toward the sample table 42 via the arm 71. The movement is stopped when the sample scooping tool 72 reaches a position where the wet-processed sample 170 can be transferred between the sample scooping tool 72 and the sample delivery tool of the sample stage 42. Thereafter, the sample delivery tool of the sample stage 42 is raised. As a result, the wet-processed sample 170 is transferred to the sample delivery tool of the sample stage 42. The sample scooping tool 72 from which the wet-processed sample 170 has been removed is retracted for one day. The sample delivery tool on the sample stage 42 is lowered. Thus, the wet-processed sample 170 is transferred from the sample delivery tool of the sample stage 42 to the sample stage 42 and is set on the sample setting surface. The sample stage 42 is heated by the heat generated by energizing the heater 43, and the wet-processed sample 170 is heated via the sample stage 42. The temperature of the wet-processed sample 170 is adjusted to a predetermined temperature by adjusting the amount of electricity supplied to the heater 43. Thus, the wet-processed sample 170 is dried. Note that, for example, a nitrogen gas is introduced into the drying processing chamber 41 by an inert gas introducing unit, whereby the drying processing is performed in a nitrogen gas atmosphere. When such a drying process is completed, the sample delivery tool on the sample stage 42 is raised.

The dried sample 170 is transferred from the sample table 42 to the sample delivery tool during the ascent. The lifting of the sample delivery tool on the sample stage 42 that has received the dried sample 170 is stopped when the sample delivery tool 170 reaches a position where the dried sample 170 can be delivered to and from the sample scooping tool 72. In this state, the sample scooping tool 72 is moved again to the sample table 42 via the arm 72. The movement is performed by the sample rake 72.
The dried sample 17 between the sample
When the sample scooping tool 72 reaches a position where it can deliver 0, it is stopped. Thereafter, the sample delivery tool of the sample stage 42 is lowered. Thereby, the dried sample 170 is transferred to the sample scooping tool 72. The dried sample 170
The sample delivery tool of the sample stage 42 from which the has been removed is prepared for receiving the next wet-processed sample.

The sample scooping tool 72 having the dried sample 170 is further moved from the drying chamber 41 to the sample collecting chamber 150 through the opening toward the cassette table 151 via the arm 71. The movement is performed by the sample rake 72 and the cassette table.
The sample scooping tool 72 is stopped when the sample scooping tool 72 reaches a position where the sample 170 that has been subjected to the drying process can be transferred to and from the cassette 161 installed in the 151. The cassette 161 has, for example, a plurality of storage grooves formed in the height direction, and the cassette 161 is positioned so as to be able to receive a sample by the uppermost groove. In this state, the cassette 161 is lowered intermittently by a predetermined amount. As a result, the dried sample 17
0 is supported in the uppermost groove of the cassette 161,
Collected and stored in 1. In addition, for example, nitrogen gas is introduced into the sample collection chamber 150 by an inert gas introduction unit, whereby the dried sample 170 is stored in the cassette 161 under a nitrogen gas atmosphere, and It is carried and stored at 150. The collection of the dried samples in the cassette 161 is sequentially performed, whereby the cassette 161 is carried out of the sample collection chamber 150 when the collection is completed. The sample carried out of the sample collection chamber 150 while being stored in the cassette 161 is carried to the next step.

As a sample, a Si substrate 171 as shown in FIG.
Make a 3000 mm thick silicon oxide belly 172 on top and T
A laminated wiring of the iW layer 173 and the Al-Cu-Si film 174 was formed, and a sample using the photoresist 175 as a mask was processed using the apparatus shown in FIGS.

As etching conditions, the processing gas type BC
l ₃ + Cl ₂ , a processing gas flow rate of 150 sccm, a processing pressure of 16 mTorr, a microwave output of 600 W, and an RF bias of 60 W were selected.

After the etching process, all the subsequent processes are passed without any processing (A), after the etching process, the plasma post-processing is performed, and the subsequent wet process is omitted with the drying process (B) ) And those that have undergone the prescribed treatment in all steps (D), and those that have undergone a wet treatment and a drying treatment, omitting the plasma post-treatment after the etching treatment, and (C).
The effect on anticorrosion was compared.

The processing conditions in the plasma post-processing chamber were as follows: processing gas type O ₂ + CF ₄ , processing gas flow rate 400 sccm (O ₂ ), 35 sccm (CF
₄ ) The processing pressure was 1.5 Torr, and the plasma was generated using a microwave of 2.45 GHz. In this case, the post-plasma treatment is mainly for the purpose of ashing the photoresist and removing the chloride remaining on the pattern side wall protective film and the bottom of the pattern.
Minutes additional processing was performed. In the wet treatment, a 1 minute water washing treatment with pure water and a 30 second drying process were performed. Further, the sample stage was heated to 150 ° C. by a heater under a nitrogen gas atmosphere, and the wet-processed sample was left thereon for 1 minute to perform a drying process.

As a result, when an etching treatment was performed and then a plasma post-treatment was performed, and a wet treatment, that is, a treatment in which the water washing treatment and the drying treatment were omitted, was observed using an optical microscope. Spot-like ones were observed. Then, when this was further observed in detail using SEM, as shown in FIG. 5, a product 180 due to fan-shaped corrosion was recognized starting from the boundary between the TiW layer and the Al-Cu-Si layer. Therefore, as plasma post-treatment conditions, the mixing ratio of CF _{4 to} O ₂ was 5 to 20%, the treatment pressure was 0.6 to 2 Torr, and the sample temperature was raised to 250 ° C. during the treatment. After the treatment, the same corrosion was observed within several hours after the treatment.

The above-mentioned corrosion is not observed in the Al-Si single-layer wiring film. That is, from this, it is considered that corrosion is generated and accelerated by the so-called battery contact in the laminated wiring of dissimilar metals having different ionization tendencies.

In order to sufficiently prevent the occurrence of such corrosion, it has been found that it is necessary to thoroughly remove even a slight chlorine component which cannot be completely removed by the plasma post-treatment after the etching treatment.

Then, as described above, the treatment was performed under various conditions, and the time until corrosion occurred after the treatment was examined. The result shown in FIG. 6 was obtained. As is clear from FIG. 6, with respect to the wiring material having a severe corrosion such as the laminated wiring, a plasma post-treatment such as resist ashing is performed after the etching, or a plasma post-treatment such as the resist ashing is performed after the etching. Without performing the washing and drying treatments, the anti-corrosion effect is not sufficient, and for the first time, the plasma treatments such as etching, resist incineration, etc., washing, and drying are performed. High anticorrosion effect over time can be obtained.

In addition to the above, the same effect can be obtained by treating with hydrofluoric nitric acid before the water washing process for the purpose of removing the residue after etching. Further, after the etching process, after performing a plasma ashing process, for the purpose of removing the pattern sidewall protective film that cannot be completely removed by the process, a process with a weak alkaline solution or a weak acidic solution (for example, acetic acid), a water washing process, By performing the drying treatment, the chlorine component can be more completely removed, and the anticorrosion effect can be further improved.

In the above embodiment, the etching process
Plasma post-treatment → wet treatment → drying treatment, but etching treatment → wet treatment → drying treatment → plasma post-treatment may also be used. In this case, in the wet processing, for example, preliminary removal of a residue or the like after etching and removal of the resist are performed. In addition, for example, preliminary removal of a residue or the like after etching is performed. In such a case, in the plasma post-processing, for example, removal of a residual residue or the like is performed, and, for example, removal of the residual residue or the like and removal of the resist are performed.

In the above-described embodiment, the time required for completing the wet processing of the plasma-treated sample is, for example, about 1 hour as shown in FIG. Therefore, it is limited to the time at the longest. However, it is desirable to complete the wet processing within as short a time as possible. That is, it is desirable that the sample after the plasma post-processing is immediately conveyed from the plasma post-processing apparatus to the wet processing apparatus to perform the wet processing. In the above-described embodiment, the plasma-post-treated sample is transported in the air. Alternatively, the sample may be transported under vacuum or in an inert gas atmosphere. The transfer in such an atmosphere is extremely effective when the time from the plasma post-treatment to the start of the wet treatment is longer than, for example, the time of occurrence of corrosion in the atmosphere. In such a case, means for storing the plasma-post-treated sample under vacuum or in an inert gas atmosphere may be provided between the plasma post-processing apparatus and the wet processing apparatus.

FIG. 7 illustrates a second embodiment of the present invention. The difference from FIG. 1 illustrating the first embodiment of the present invention is that the passivation treatment device 190 is This is a point attached to the latter stage. In this case, the sample transfer means 90
It has a function of transporting the dried sample from the drying chamber (not shown) of the drying apparatus 40 to the passivation chamber (not shown) of the passivation apparatus 190. Further, there is provided a sample transport means 200 for transporting the passivated sample to, for example, a collection cassette (not shown). In FIG. 7, the same devices and the like as those in FIG.

In FIG. 7, a sample (not shown) which has been subjected to the etching and plasma post-processing is carried into a wet processing chamber (not shown) of the wet processing apparatus 30 by the sample transfer means 60, and the wet processing in the wet processing chamber is performed. It is installed on a sample mounting surface of a sample stage (not shown) which is a station. The plasma-post-processed sample placed on the sample stage in the wet processing chamber is subjected to, for example, a phenomenon liquid treatment (TMAH). By such a wet treatment, residues after etching and the like are sufficiently removed. At the same time, when the sample has, for example, Al as a component as shown in FIG. 4, the Al is also partially dissolved. If such a sample is subsequently subjected to a drying treatment and taken out into the atmosphere, for example, oxidation, which is a form of corrosion, occurs, which is inconvenient.
Therefore, the sample subjected to TMAH and dried in the drying treatment chamber of the drying treatment device 40 is carried into the passivation treatment room of the passivation treatment device 190 by the sample transfer means 90, and is treated in the treatment station in the passivation treatment room. Is set on a sample setting surface of a sample stage (not shown). On the other hand, in the passivation chamber, gas plasma for passivation, this stage, and oxygen gas plasma are generated or transferred. The dried sample placed on the sample stage in the passivation chamber is passivated by the oxygen gas plasma. The passivated sample is conveyed from the passivation chamber to the collection cassette by the sample conveying means 200 and collected and stored.

The passivation treatment may be performed by using, for example, nitric acid in addition to the above.

[0082]

According to the present invention, different ionizations are performed.
Samples of the wiring layer made of a laminate comprising a metal having a tendency, the effect can be sufficiently prevented corrosion of after the etching process.

[Brief description of the drawings]

FIG. 1 is a block diagram of a sample processing apparatus according to an embodiment of the present invention.

FIG. 2 is a specific detailed plan sectional view of the apparatus of FIG. 1;

FIG. 3 is a longitudinal sectional view of the device of FIG. 2;

FIG. 4 is a longitudinal sectional view showing an example of a sample.

FIG. 5 is a perspective external view showing an example of occurrence of corrosion.

FIG. 6 is a relationship diagram between a processing mode after an etching process and a time until corrosion occurs.

FIG. 7 is a block diagram of a sample processing apparatus according to a second embodiment of the present invention.

[Explanation of symbols]

10 ---- Etching processing equipment, 20 ---- Plasma post-processing equipment, 30 ---- Wet processing equipment, 40 ---- Drying processing equipment, 190 ---
-Passivation equipment, 50 to 90,200 ---- Sample transport means

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification code FI H01L 21/3065 H01L 21/302 N (72) Inventor Ryoji Fukuyama 502 Kandate-cho, Tsuchiura-shi, Ibaraki Pref. (72) Inventor Kazuo Nojiri 5-2-1, Josui-Honcho, Kodaira-shi, Tokyo Inside the Musashi Plant, Hitachi, Ltd. (72) Inventor Zenzo Tori 5-2-1, Josui-Honcho, Kodaira-shi, Tokyo (56) References JP-A-63-244846 (JP, A) JP-A-63-249146 (JP, A) JP-A-61-160938 (JP, A) JP-A-56-17022 JP, A) JP-A-63-164243 (JP, A) JP-A-59-195654 (JP, A) JP-A-63-36037 (JP, U) (58) Fields investigated (Int. Cl. ⁷ , (DB name) H01L 21/68 H01L 21/304 651 H01L 21/3065

Claims (3)

(57) [Claims] 1. A plasma etching method for a wiring film sample made of a laminate containing metals having different ionization tendencies by a first gas plasma through a resist mask formed on the wiring film in a first processing chamber. Performing a wet treatment step of preliminarily removing a residue remaining on the sample after the etching, a drying treatment step of drying the wet treated sample, a resist mask and a wet mask of the dried specimen.
Removing the residual residue remaining after the type treatment by a second gas plasma in a second processing chamber, continuously for each of the samples. 2. A sample processing method according to claim 1, wherein said sample is a sample processing method, characterized by being tied to the wet treatment is performed in an inert gas atmosphere. 3. A sample having a wiring film made of a laminate containing metals having different ionization tendencies and a resist mask formed on the wiring film is plasma-treated by a first gas plasma in a first processing chamber. Processing means for etching, wet processing means for preliminarily removing residues remaining on the processed sample, drying means for drying the processed sample in the wet processing means, and the dried sample A resist mask and a post-processing means for removing a residual residue remaining after the wet processing by a second gas plasma in a second processing chamber, wherein the sample is continuously processed one by one. Processing equipment.