JP3096087B2 - Ion sensor - Google Patents

Ion sensor

Info

Publication number
JP3096087B2
JP3096087B2 JP03105248A JP10524891A JP3096087B2 JP 3096087 B2 JP3096087 B2 JP 3096087B2 JP 03105248 A JP03105248 A JP 03105248A JP 10524891 A JP10524891 A JP 10524891A JP 3096087 B2 JP3096087 B2 JP 3096087B2
Authority
JP
Japan
Prior art keywords
ion
sensor
fpcb
sensor chip
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP03105248A
Other languages
Japanese (ja)
Other versions
JPH04258755A (en
Inventor
善孝 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shindengen Electric Manufacturing Co Ltd
Original Assignee
Shindengen Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shindengen Electric Manufacturing Co Ltd filed Critical Shindengen Electric Manufacturing Co Ltd
Priority to JP03105248A priority Critical patent/JP3096087B2/en
Publication of JPH04258755A publication Critical patent/JPH04258755A/en
Application granted granted Critical
Publication of JP3096087B2 publication Critical patent/JP3096087B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明はイオン計測等を行う半導
体イオンセンサに関するもので特にイオンセンサの実装
構造に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor ion sensor for performing ion measurement and the like, and more particularly to a mounting structure of an ion sensor.

【0002】[0002]

【従来技術とその問題点】従来イオン感応形電界効果ト
ランジスタ(以下ISFET)の実装はワイヤーを直接
ISFETチップにボンディングするか、フレキシブル
プリント回路(以下FPCB)に取り付けるかしてい
た。まず問題となるのはボンディングの際の電極部の位
置合わせである。ISFETは微小センサとして期待さ
れているので、電極部間の距離が狭く位置合わせは困難
を伴う。次の問題はボンディング後の樹脂による絶縁封
止である。従来は封止しやすいような構造をとらず、適
当に一つ一つ手作業で注意深く行っていた。この為IS
FETの組立コストは上昇し、安価なイオンセンサが供
給できなかった。
2. Description of the Related Art Conventionally, mounting of an ion-sensitive field effect transistor (hereinafter referred to as ISFET) involves directly bonding a wire to an ISFET chip or attaching it to a flexible printed circuit (hereinafter referred to as FPCB). The first problem is the positioning of the electrode part during bonding. Since the ISFET is expected as a microsensor, the distance between the electrode portions is small, and alignment is difficult. The next problem is insulation sealing with a resin after bonding. In the past, the structure was not taken so as to be easily sealed, and was carefully performed manually one by one. Because of this IS
The assembling cost of the FET has increased, and an inexpensive ion sensor could not be supplied.

【0003】[0003]

【本発明の目的】本発明は、自動化しやすいISFET
の封止技術と構造を提供し、上記の組立工程の作業性を
改善し安価なイオンセンサを実現しようとするものであ
る。
The object of the present invention is to provide an ISFET that is easy to automate.
It is intended to provide a sealing technology and a structure of the above, improve the workability of the above-mentioned assembling process, and realize an inexpensive ion sensor.

【0004】図1(a)(b)は本発明に使用するフレ
キシブルプリント回路基板(以下FPCBと称す)の平
面図及び同(a)図A−A’断面図で、図中1はポリイ
ミドフィルム等の絶縁フィルムで内部に導体箔2をも
ち、該導体箔2により電気配線回路が形成されている。
そして導体箔2に接続される外部(コネクタ)接続用の
端子部3及び後述するセンサチップ(ISFET)接続
用バンプ電極部4が形成されている。5はセンサチップ
の感応部を露呈するためのイオン感応窓、6は液絡部を
形成する液絡穴である。又、7は絶縁フィルム1と張り
付け等により一体化される耐熱性の補強板で、前記バン
プ電極部4及びイオン感応窓に対向する部所にセンサチ
ップ取付け用の開口部8と、液絡穴6との対向部に開口
部9が夫々形成されている。なお開口部8はセンサチッ
プの形状より大きく形成されている。
FIGS. 1 (a) and 1 (b) are a plan view of a flexible printed circuit board (hereinafter referred to as "FPCB") used in the present invention and a sectional view taken along the line AA 'of FIG. 1 (a). The conductor foil 2 is formed inside by an insulating film such as the above, and the conductor foil 2 forms an electric wiring circuit.
An external (connector) connection terminal portion 3 connected to the conductor foil 2 and a sensor chip (ISFET) connection bump electrode portion 4 described later are formed. Reference numeral 5 denotes an ion sensitive window for exposing the sensitive portion of the sensor chip, and reference numeral 6 denotes a liquid junction hole forming a liquid junction. Reference numeral 7 denotes a heat-resistant reinforcing plate which is integrated with the insulating film 1 by bonding or the like. An opening 8 for attaching a sensor chip and a liquid junction hole 6 are provided at a portion facing the bump electrode portion 4 and the ion-sensitive window. Openings 9 are respectively formed in the opposed portions of. The opening 8 is formed larger than the shape of the sensor chip.

【0005】図2(a)(b)(c)はセンサチップを
実装するための本発明の組立説明図で、10はセンサチ
ップでボンディング用バンプ電極10aとイオン感応部
10bが予め形成されている。そして図2(a)に示す
ようにチップ取孔8内でバンプ電極4及び10aを接合
する。次にセンサチップ10のイオン感応部10b領域
が露出するように、また補強板7の開口窓8が埋まるよ
うに絶縁樹脂11で封止する。図2−(b)の構造によ
りシート状のイオンセンサが実現できる。このような構
成にすることによりISFETチップのボンディング時
にFPCBに補強板が張り付いているので、ボンディン
グ位置合わせが正確にできる。また、補強板の開口窓の
寸法を調整することによりISFETを窓に入れるだけ
で自動的にボンディング位置合わせができるようにな
る。さらにチップへの絶縁樹脂封止についても樹脂11
の粘度を調整することにより、窓部に一定量滴下するこ
とによりイオン感応部を露出させるように、自動的に封
止することが可能である。次に図2(c)に示すように
飽和KClゲル12を充填したケース13に金属疑似電
極14を埋設し、上記のシート状センサを液絡部が接す
るように一体に構成する。
FIGS. 2 (a), 2 (b) and 2 (c) are assembly explanatory views of the present invention for mounting a sensor chip. Reference numeral 10 denotes a sensor chip in which a bonding bump electrode 10a and an ion sensitive portion 10b are formed in advance. I have. Then, as shown in FIG. 2A, the bump electrodes 4 and 10a are joined in the chip hole 8. Next, the sensor chip 10 is sealed with an insulating resin 11 so that the ion-sensitive portion 10b region is exposed and the opening 8 of the reinforcing plate 7 is filled. The sheet-like ion sensor can be realized by the structure shown in FIG. With such a configuration, since the reinforcing plate is attached to the FPCB when bonding the ISFET chip, the bonding position can be accurately adjusted. Further, by adjusting the size of the opening window of the reinforcing plate, the bonding position can be automatically adjusted just by inserting the ISFET into the window. Further, the resin 11 is also used for sealing the insulating resin to the chip.
By adjusting the viscosity of the resin, it is possible to seal automatically so that the ion-sensitive part is exposed by dropping a certain amount on the window. Next, as shown in FIG. 2 (c), a metal dummy electrode 14 is embedded in a case 13 filled with a saturated KCl gel 12, and the above-mentioned sheet-like sensor is integrally formed so that a liquid junction is in contact therewith.

【0006】図3は本発明の他の実施例構造図で2つの
シート状センサを用いて差動構成を形成した例を示すも
ので、ケース13に内側向きと外側向きにISFET1
0,10’がボンディングされたシートをそれぞれ張り
合わせて、外側向きのシート上のISFET近傍に液絡
部9を設けまたケース内に飽和KClゲル12を充填し
その中に金属疑似電極14を設ける構成とする。この構
成でケース内の飽和KClゲルに接しているISFET
10’は参照用のISFETとして働き、ケースの外側
向きのISFET10は被測定溶液のイオン濃度を検知
する。上記二つのISFETは飽和KClゲル中の金属
疑似電極14に相対し、結果として差動電圧を出力する
ことができる。
FIG. 3 is a structural view of another embodiment of the present invention, showing an example in which a differential configuration is formed using two sheet-like sensors.
A structure in which sheets bonded with 0 and 10 'are bonded to each other, a liquid junction 9 is provided near the ISFET on the outwardly facing sheet, and a case is filled with a saturated KCl gel 12 and a metal pseudo electrode 14 is provided therein. And ISFET in contact with the saturated KCl gel in the case with this configuration
10 'functions as a reference ISFET, and the ISFET 10 facing the outside of the case detects the ion concentration of the solution to be measured. The two ISFETs are opposed to the metal pseudo electrode 14 in the saturated KCl gel, and can output a differential voltage as a result.

【0007】図4は本発明の他の実施例構造図で1つの
基板(シート)の両面にISFET10、10’を張り付
けたもので、飽和KClゲルに接する向きと、被測定溶
液に接する向きに2ケのISFET10、10’をそれ
ぞれ反対向きにシート状のボンディング部に張り付けた
もので、この構成でケース13に取り付け、液絡部9を
設け、ケース内を飽和KClゲル12で満たし、金属疑
似電極14を設けることにより簡単に差動構成のイオン
センサを製作できる。なおセンサチップ10’のイオン
感応部10b’には予めダイヤモンド状薄膜等のイオン
非感応膜が形成され、基準用或いは参照用電極として機
能する。
FIG. 4 is a structural view of another embodiment of the present invention, in which ISFETs 10 and 10 'are adhered to both surfaces of one substrate (sheet), in a direction in contact with a saturated KCl gel and in a direction in contact with a solution to be measured. Two ISFETs 10, 10 'are attached to a sheet-like bonding portion in opposite directions, respectively, and are attached to a case 13 with this configuration, a liquid junction 9 is provided, the inside of the case is filled with a saturated KCl gel 12, and a pseudo metal is formed. By providing the electrode 14, an ion sensor having a differential configuration can be easily manufactured. An ion-insensitive film such as a diamond-like thin film is formed in advance on the ion-sensitive portion 10b 'of the sensor chip 10', and functions as a reference or reference electrode.

【0008】[0008]

【発明の効果】本発明により、ISFETのボンディン
グ及び樹脂封止が容易となり、簡単な設備で自動化が可
能になるので組立コストが大幅に低下し安価なイオンセ
ンサの実現に効果が大きいものである。
According to the present invention, ISFET bonding and resin encapsulation are facilitated and automation is possible with simple equipment, so that the assembly cost is greatly reduced and the effect of realizing an inexpensive ion sensor is great. .

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明に用いるフレキシブルプリント回路基板
(FPCB)の構造図。
FIG. 1 is a structural diagram of a flexible printed circuit board (FPCB) used in the present invention.

【図2】本発明の組立説明図FIG. 2 is an explanatory view of the assembly of the present invention.

【図3】本発明の他の実施例構造図FIG. 3 is a structural view of another embodiment of the present invention.

【図4】本発明の他の実施例構造図FIG. 4 is a structural view of another embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1 絶縁フィルム 2 導体箔 3 外部接続用電極 4 バンプ用電極 5 イオン感応窓 6 液絡穴 7 補強板 8 チップ取付け用開口部 9 液絡用開口部 10 イオンセンサチップ 10a バンプ用電極 10b イオン感応部 12 飽和KClゲル 13 ケース 14 金属疑似電極 DESCRIPTION OF SYMBOLS 1 Insulating film 2 Conductor foil 3 External connection electrode 4 Bump electrode 5 Ion sensitive window 6 Liquid junction hole 7 Reinforcement plate 8 Chip mounting opening 9 Liquid junction opening 10 Ion sensor chip 10a Bump electrode 10b Ion sensitive part 12 Saturated KCl gel 13 Case 14 Metal pseudo electrode

Claims (2)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】半導箔による電気配線回路を内在するフレ
キシブルプリント回路基板(以下FPCB)に外部接続
用の電極部とセンサチップ接続用のバンプ電極部を設け
ると共に、前記FPCBを貫通する液絡用穴とイオン感
応窓を設け、又、前記FPCBのセンサチップ接続用の
電極部、イオン感応窓及び液絡穴に対向する部分に夫々
開口部を有する補強板を前記FPCBと一体に構成し、
且つ前記補強板の一方の開口部内に前記センサチップを
設けて該センサチップのバンプ電極と接続用バンプ電極
を接合すると共に前記開口部内のセンサチップを樹脂封
止し、且つ飽和KClゲルを充填したケースに金属疑似
電極を埋設し、該ケースとイオンセンサを該飽和KCl
ゲルと液絡用開口部もしくは、該イオン感応窓が接する
ように一体に構成した事を特徴とするイオンセンサ。
1. A flexible printed circuit board (hereinafter referred to as "FPCB") in which an electric wiring circuit made of a semiconductive foil is provided with an electrode portion for external connection and a bump electrode portion for sensor chip connection, and a liquid junction penetrating the FPCB. A hole and an ion-sensitive window are provided, and a reinforcing plate having an opening in a portion opposite to the electrode portion for connecting the sensor chip of the FPCB, the ion-sensitive window and the liquid junction hole is integrally formed with the FPCB,
The sensor chip was provided in one opening of the reinforcing plate, the bump electrode of the sensor chip was joined to the bump electrode for connection, and the sensor chip in the opening was resin-sealed and filled with saturated KCl gel. A metal pseudo electrode is embedded in the case, and the case and the ion sensor are saturated with KCl.
An ion sensor, wherein the gel and the opening for liquid junction or the ion sensitive window are integrally formed so as to be in contact with each other.
【請求項2】FPCBに複数個のセンサチップ接続用の
バンプ電極を設けた事を特徴とする請求項1のイオンセ
ンサ。
2. The ion sensor according to claim 1, wherein a plurality of bump electrodes for connecting sensor chips are provided on the FPCB.
JP03105248A 1991-02-13 1991-02-13 Ion sensor Expired - Fee Related JP3096087B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP03105248A JP3096087B2 (en) 1991-02-13 1991-02-13 Ion sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP03105248A JP3096087B2 (en) 1991-02-13 1991-02-13 Ion sensor

Publications (2)

Publication Number Publication Date
JPH04258755A JPH04258755A (en) 1992-09-14
JP3096087B2 true JP3096087B2 (en) 2000-10-10

Family

ID=14402353

Family Applications (1)

Application Number Title Priority Date Filing Date
JP03105248A Expired - Fee Related JP3096087B2 (en) 1991-02-13 1991-02-13 Ion sensor

Country Status (1)

Country Link
JP (1) JP3096087B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5677892B2 (en) * 2011-05-11 2015-02-25 株式会社堀場製作所 Ion sensor device and ion concentration measuring device equipped with ion sensor device
JP6004523B2 (en) * 2012-07-09 2016-10-12 アイスフエトコム株式会社 pH meter

Also Published As

Publication number Publication date
JPH04258755A (en) 1992-09-14

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