JP3095516B2 - Waxless polishing machine - Google Patents
Waxless polishing machineInfo
- Publication number
- JP3095516B2 JP3095516B2 JP04046555A JP4655592A JP3095516B2 JP 3095516 B2 JP3095516 B2 JP 3095516B2 JP 04046555 A JP04046555 A JP 04046555A JP 4655592 A JP4655592 A JP 4655592A JP 3095516 B2 JP3095516 B2 JP 3095516B2
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- plate
- polished
- waxless
- cloth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
【0001】[0001]
【産業上の利用分野】本発明は、半導体基板などのワッ
クスレス型研磨装置に係り、特に半導体装置の製造にお
いて半導体基板表面を研磨によって平坦化を可能とした
ワックスレス型研磨装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wax-less polishing apparatus for a semiconductor substrate and the like, and more particularly to a wax-less polishing apparatus capable of flattening the surface of a semiconductor substrate by polishing in the manufacture of a semiconductor device.
【0002】[0002]
【従来の技術】近年の著しいLSI技術の急速な進展に
伴い、集積回路が高密度化してそれに対応して素子寸法
が微細化している。それにともなって配線の多層化が試
みられていることから、半導体基板表面の段差による凹
凸が極めて大きくなって、配線の接続不良や短絡,断線
などが生じ易い欠点があり、製品歩留りの低下の原因と
なっていた。2. Description of the Related Art With the rapid progress of LSI technology in recent years, integrated circuits have become higher in density and the element size has been correspondingly reduced. Along with this, attempts have been made to increase the number of wiring layers, resulting in extremely large irregularities due to steps on the surface of the semiconductor substrate. Had become.
【0003】ところで、集積回路表面の平坦化を実現す
る手段の一つとしてメカノケミカルポリシング装置(た
とえば特開平3−248532号公報参照)がある。この装置
は、たとえば米国のWestech Systems Inc.が“Model 37
2 Automatic Wafer Polisher”として販売しているよう
にワックスレス型の研磨装置が主で、コロイダルシリカ
などによる機械的要素とアルカリ系溶剤などの化学的要
素とを複合したものである。Meanwhile, as one of means for realizing the flattening of the surface of an integrated circuit, there is a mechanochemical polishing apparatus (for example, see JP-A-3-248532). This device is available, for example, from Westech Systems Inc.
It is mainly a waxless type polishing machine sold as "2 Automatic Wafer Polisher", which combines mechanical elements such as colloidal silica and chemical elements such as alkaline solvents.
【0004】すなわち、図4に示すように、被研磨物と
してたとえば半導体基板(以下単に基板という)1の表
面を研磨する研磨クロス2を貼付して回転自在とされる
研磨定盤3と、基板1を保持する研磨プレート4と、こ
の研磨プレート4を研磨クロス2面に所定の圧力で加圧
して回転自在とされる加圧機構5と、研磨クロス2上に
研磨剤6を供給するノズル7とから構成される。この基
板1は、図5の拡大した断面図に示すように、研磨プレ
ート5の下面に固着されたたとえばポリ系の柔軟材8に
よって形成される真空引き孔9を介して吸着される。そ
して、回転される研磨定盤3の研磨クロス2上にノズル
7から研磨剤6を滴下して、加圧機構5を介して一定の
圧力で負荷されながら回転する研磨プレート4と研磨定
盤3との間で基板1の面を研磨するのである。[0004] That is, as shown in FIG. 4, a polishing platen 3, which is rotatable by attaching a polishing cloth 2 for polishing a surface of a semiconductor substrate (hereinafter simply referred to as a substrate) 1 as a workpiece, and a substrate, 1, a polishing mechanism 5 that presses the polishing plate 4 against the surface of the polishing cloth 2 at a predetermined pressure to be rotatable, and a nozzle 7 that supplies an abrasive 6 onto the polishing cloth 2. It is composed of As shown in the enlarged cross-sectional view of FIG. 5, the substrate 1 is sucked through a vacuum evacuation hole 9 formed by, for example, a poly-based soft material 8 fixed to the lower surface of the polishing plate 5. Then, an abrasive 6 is dropped from the nozzle 7 onto the polishing cloth 2 of the rotating polishing platen 3, and the polishing plate 4 and the polishing platen 3 which rotate while being applied with a constant pressure through the pressing mechanism 5. Then, the surface of the substrate 1 is polished.
【0005】[0005]
【発明が解決しようとする課題】しかしながら、上記し
たような従来のメカノケミカルポリシング装置では、ノ
ズル7から研磨クロス2に滴下される研磨剤6は、研磨
定盤3の回転により研磨クロス2の面全体に広げられる
のであるが、研磨クロス2と研磨プレート4の間に十分
に供給されないという欠点があり、それを補おうとする
と研磨剤6を大量に使用しなければならないという問題
がある。However, in the conventional mechanochemical polishing apparatus as described above, the abrasive 6 dropped onto the polishing cloth 2 from the nozzle 7 is rotated by the rotation of the polishing platen 3 so that the surface of the polishing cloth 2 is removed. Although it is spread out as a whole, it has a drawback that it is not supplied sufficiently between the polishing cloth 2 and the polishing plate 4, and there is a problem that a large amount of the abrasive 6 must be used to make up for it.
【0006】本発明は、上記のような従来技術の有する
課題を解消したワックスレス型研磨装置を提供すること
を目的とする。[0006] It is an object of the present invention to provide a waxless polishing apparatus which has solved the above-mentioned problems of the prior art.
【0007】[0007]
【課題を解決するための手段】本発明は、被研磨物を研
磨する研磨クロスを貼付した回転自在とされる研磨定盤
と、前記被研磨物を保持する研磨プレートと、この研磨
プレートを所定の圧力で前記研磨クロス面に加圧しなが
ら回転自在とされる加圧機構とを備えたワックスレス型
研磨装置において、前記研磨プレートの周側部に研磨剤
を供給する供給口を設けたことを特徴とするワックスレ
ス型研磨装置である。According to the present invention, there is provided a rotatable polishing plate having a polishing cloth attached thereon for polishing an object to be polished, a polishing plate for holding the object to be polished, and a polishing plate for holding the object to be polished. And a pressurizing mechanism that is rotatable while pressurizing the polishing cloth surface with the pressure of the above, wherein a supply port for supplying a polishing agent is provided on a peripheral side portion of the polishing plate. It is a waxless type polishing apparatus characterized by the following.
【0008】なお、前記供給口はリング状の形状が好ま
しく、あるいはスリット形状や格子形状であってもよ
い。[0008] Incidentally, the supply port may be preferably ring-shaped, or slit-shaped or lattice shape.
【0009】[0009]
【作 用】本発明によれば、回転する研磨プレートの周
側部に設けられた供給口から研磨剤を供給するようにし
たので、研磨クロスと研磨プレートの間に十分な量の研
磨剤を供給することができ、これによって被研磨物表面
の平坦性の精度を向上することができる。According to the present invention, since the abrasive is supplied from the supply port provided on the peripheral side of the rotating polishing plate, a sufficient amount of the abrasive is supplied between the polishing cloth and the polishing plate. The accuracy of the flatness of the surface of the object to be polished can be improved.
【0010】[0010]
【実施例】以下に、本発明の実施例について図面を参照
して説明する。図1は本発明の研磨装置の構成を示す側
断面図であり、図2はそのA−A矢視図である。なお、
従来例と同一部材は同一符号を付して説明を省略する。
これらの図において、10は研磨プレート4および加圧機
構5の側部を囲うように一体的に設けられる覆い体であ
り、その内面と研磨プレート4,加圧機構5の側面との
間に研磨剤6が導入される流路11が設けられ、また研磨
プレート4の周側部に沿って供給口12が設けられる。こ
の供給口12の形状は図2に示すようにリング状とされ
る。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a side sectional view showing a configuration of a polishing apparatus according to the present invention, and FIG. 2 is a view taken on line AA of FIG. In addition,
The same members as those in the conventional example are denoted by the same reference numerals, and description thereof will be omitted.
In these figures, reference numeral 10 denotes a cover integrally provided so as to surround the side portions of the polishing plate 4 and the pressing mechanism 5, and a polishing member 10 is provided between the inner surface thereof and the side surfaces of the polishing plate 4 and the pressing mechanism 5. A flow path 11 into which the agent 6 is introduced is provided, and a supply port 12 is provided along the peripheral side of the polishing plate 4. The supply port 12 has a ring shape as shown in FIG.
【0011】このような覆い体10を設けた研磨装置を用
いて基板1を研磨する際には、その研磨中に、研磨剤タ
ンク(図示せず)から覆い体10の流路11に導入された研
磨剤6を、その供給口12から研磨プレート4の側部を経
て研磨プレート4と研磨クロス2との間に直接大量に供
給することができるから、これによって基板1の表面を
高い平坦度になるように研磨することができる。When the substrate 1 is polished using a polishing apparatus provided with such a cover 10, the polishing liquid is introduced from a polishing agent tank (not shown) into the flow path 11 of the cover 10 during the polishing. The polishing agent 6 can be supplied in a large amount from the supply port 12 directly between the polishing plate 4 and the polishing cloth 2 through the side portion of the polishing plate 4, whereby the surface of the substrate 1 has a high flatness. Can be polished so that
【0012】なお、上記実施例において、供給口12の形
状をリング状として説明したが、本発明はこれに限るも
のではなく、たとえば図3(a) に示すようなスリット形
状の供給口12aやあるいは図3(b) に示すような格子形
状の供給口12b、さらには図3(c) のような多孔状の供
給口12cとすることにより、研磨剤の供給方法をコント
ロールすることができる。また、本発明の研磨装置は半
導体装置分野以外にも幅広く適用し得ることはいうまで
もない。In the above embodiment, the supply port 12 has been described as a ring, but the present invention is not limited to this. For example, a slit-like supply port 12a as shown in FIG. Alternatively, the supply method of the abrasive can be controlled by providing a lattice-shaped supply port 12b as shown in FIG. 3 (b) and a porous supply port 12c as shown in FIG. 3 (c). Needless to say, the polishing apparatus of the present invention can be widely applied to fields other than the semiconductor device field.
【0013】[0013]
【発明の効果】以上説明したように本発明によれば、研
磨プレートの周側部に設けられた供給口から研磨剤を供
給するようにしたので、研磨クロスと研磨プレートの間
に十分な量の研磨剤を供給することができ、これによっ
て被研磨物の品質向上を図ることができるとともに、研
磨剤の使用量の節減にも寄与する。As described above, according to the present invention, since the abrasive is supplied from the supply port provided on the peripheral side of the polishing plate, a sufficient amount of polishing agent is supplied between the polishing cloth and the polishing plate. Can be supplied, thereby improving the quality of the object to be polished and contributing to a reduction in the amount of the abrasive used.
【図1】本発明の研磨装置の構成を示す側断面図であ
る。FIG. 1 is a side sectional view showing a configuration of a polishing apparatus of the present invention.
【図2】図1のA−A矢視図である。FIG. 2 is a view taken along the line AA of FIG. 1;
【図3】(a) ,(b) ,(c) は供給口の他の実施例を示す
平面図である。FIGS. 3 (a), 3 (b) and 3 (c) are plan views showing another embodiment of the supply port.
【図4】メカノケミカルポリシング装置の従来例を示す
斜視図である。FIG. 4 is a perspective view showing a conventional example of a mechanochemical polishing apparatus.
【図5】従来のメカノケミカルポリシング装置の要部を
拡大して示す部分側断面図である。FIG. 5 is an enlarged partial side sectional view showing a main part of a conventional mechanochemical polishing apparatus.
1 基板(半導体基板) 2 研磨クロス 3 研磨定盤 4 研磨プレート 5 加圧機構 6 研磨剤 8 柔軟材 9 真空引き孔 10 覆い体 11 流路 12 供給口 DESCRIPTION OF SYMBOLS 1 Substrate (semiconductor substrate) 2 Polishing cloth 3 Polishing platen 4 Polishing plate 5 Pressing mechanism 6 Abrasive 8 Flexible material 9 Vacuum hole 10 Cover 11 Flow path 12 Supply port
フロントページの続き (56)参考文献 特開 平4−129669(JP,A) 特開 平2−60127(JP,A) 実開 平5−49253(JP,U) (58)調査した分野(Int.Cl.7,DB名) B24B 37/00 H01L 21/304 622 Continuation of front page (56) References JP-A-4-129669 (JP, A) JP-A-2-60127 (JP, A) JP-A-5-49253 (JP, U) (58) Fields surveyed (Int) .Cl. 7 , DB name) B24B 37/00 H01L 21/304 622
Claims (2)
した回転自在とされる研磨定盤と、前記被研磨物を保持
する研磨プレートと、この研磨プレートを所定の圧力で
前記研磨クロス面に加圧しながら回転自在とされる加圧
機構とを備えたワックスレス型研磨装置において、前記
研磨プレートの周側部に研磨剤を供給する供給口をリン
グ状の形状となるように設けたことを特徴とするワック
スレス型研磨装置。1. A rotatable polishing platen to which a polishing cloth for polishing an object to be polished is affixed, a polishing plate for holding the object to be polished, and the polishing plate being attached to the surface of the polishing cloth with a predetermined pressure. In a waxless type polishing apparatus having a pressurizing mechanism that is rotatable while pressurizing, a supply port for supplying an abrasive to a peripheral side portion of the polishing plate is connected to a phosphorus.
A waxless type polishing apparatus, wherein the polishing apparatus is provided so as to have a brush-like shape .
した回転自在とされる研磨定盤と、前記被研磨物を保持
する研磨プレートと、この研磨プレートを所定の圧力で
前記研磨クロス面に加圧しながら回転自在とされる加圧
機構とを備えたワックスレス型研磨装置において、前記
研磨プレートの周側部に研磨剤を供給する供給口をスリ
ット形状または格子形状となるように設けたことを特徴
とするワックスレス型研磨装置。2. A polishing cloth for polishing an object to be polished is attached.
A rotatable polishing platen that holds the object to be polished
Polishing plate and the polishing plate at a predetermined pressure.
Pressurization that allows free rotation while pressing against the polishing cloth surface
A waxless type polishing apparatus having a mechanism
Slip the supply port for supplying abrasive to the peripheral side of the polishing plate.
A waxless- type polishing apparatus characterized in that the polishing apparatus is provided so as to have a slit shape or a lattice shape .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP04046555A JP3095516B2 (en) | 1992-03-04 | 1992-03-04 | Waxless polishing machine |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP04046555A JP3095516B2 (en) | 1992-03-04 | 1992-03-04 | Waxless polishing machine |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH05251413A JPH05251413A (en) | 1993-09-28 |
JP3095516B2 true JP3095516B2 (en) | 2000-10-03 |
Family
ID=12750573
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP04046555A Expired - Fee Related JP3095516B2 (en) | 1992-03-04 | 1992-03-04 | Waxless polishing machine |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP3095516B2 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6527624B1 (en) * | 1999-03-26 | 2003-03-04 | Applied Materials, Inc. | Carrier head for providing a polishing slurry |
JP6345474B2 (en) * | 2014-04-30 | 2018-06-20 | 株式会社荏原製作所 | Substrate polishing equipment |
US10576604B2 (en) | 2014-04-30 | 2020-03-03 | Ebara Corporation | Substrate polishing apparatus |
CN105983895B (en) * | 2015-01-28 | 2018-01-09 | 东港启鑫科技有限公司 | A kind of waxing mechanism of stainless steel tableware automatic polishing machine |
CN108044431A (en) * | 2018-02-06 | 2018-05-18 | 俞巍 | A kind of productive technology of short flow technical equipment |
-
1992
- 1992-03-04 JP JP04046555A patent/JP3095516B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH05251413A (en) | 1993-09-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR0154610B1 (en) | Method for polishing semiconductor substrate and apparatus for the same | |
JP3645528B2 (en) | Polishing method and semiconductor device manufacturing method | |
US6010395A (en) | Chemical-mechanical polishing apparatus | |
KR20010052820A (en) | A technique for chemical mechanical polishing silicon | |
JP2002524281A (en) | Carrier head for chemical mechanical polishing of substrates | |
US6722949B2 (en) | Ventilated platen/polishing pad assembly for chemcial mechanical polishing and method of using | |
US6218306B1 (en) | Method of chemical mechanical polishing a metal layer | |
JP2000190211A (en) | Chemical mechanical polishing device and its method | |
JP3095516B2 (en) | Waxless polishing machine | |
JP2005531930A (en) | Carrier head that is partly a membrane | |
US6500059B2 (en) | Apparatus and method for mounting a wafer in a polishing machine | |
US6749486B2 (en) | Chemical-mechanical polishing device, damascene wiring forming device, and damascene wiring forming method | |
JP3326841B2 (en) | Polishing equipment | |
JP3291946B2 (en) | Chemical mechanical polishing apparatus and chemical mechanical polishing method | |
JPH0236066A (en) | Abrasive cloth and polishing device | |
JP3047904B1 (en) | Polishing equipment | |
JPH09246218A (en) | Polishing method/device | |
JP2000094310A (en) | Substrate-being-polished holding device, polishing method for substrate and manufacture of semiconductor device | |
JP3575944B2 (en) | Polishing method, polishing apparatus, and method of manufacturing semiconductor integrated circuit device | |
JPH0298926A (en) | Polishing apparatus for semiconductor wafer | |
JPH04206930A (en) | Chuck for polishing semiconductor wafer | |
JP3601937B2 (en) | Surface flattening method and surface flattening device | |
JPH0122113B2 (en) | ||
JPH097984A (en) | Manufacture of semiconductor device and polishing apparatus used therefore | |
JPH08264497A (en) | Wafer fitting base |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |