JP3086607B2 - Liquid crystal display - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal display device having a two-terminal nonlinear element.

[0002]

2. Description of the Related Art As a method for displaying large-capacity characters and images using liquid crystal, a method using a two-terminal non-linear element or a three-terminal active element has been actively studied and developed.

A two-terminal non-linear element has the advantages of a simpler structure and fewer manufacturing steps than a three-terminal element.
The method of using a two-terminal nonlinear element is roughly classified into a method using the nonlinearity of capacitance and a method of using the nonlinearity of electric resistance.

[0004] An attempt to display a liquid crystal using the non-linearity of capacitance has been reported by Gramair et al. In Mol. Cryst. Li
q. Cryst. 15 (1971),
Further, a liquid crystal element using a ferroelectric substance is disclosed by Tannas et al. In SID '73 Symp. Digest (1973).

However, this method has a drawback that a drive voltage is high and a ferroelectric substance has a large temperature dependency of a dielectric constant, and has not been put to practical use at present.

On the other hand, as a method using the nonlinearity of the electric resistance, Lechner et al., Proc. IEEE59.
The method using a diode in (1971)
sterryry is IEEE. Trans. Elec
Tough Devices ED-26 (1979) describes a method using a ZnO varistor.
EE. Trans. Electron Devices
Metal-Ins in ED-28 (1981)
Utilizer-Metal (MIM) has been proposed.

Further, as a liquid crystal display device, an MIM type 2 using tantalum oxide (Ta ₂ O ₅ ) as a nonlinear resistance layer.
Devices having terminal elements (hereinafter abbreviated as MIM elements) have been commercialized.

This MIM element has the following features.
Since a timing signal line and a data signal line are not required unlike a TFT (thin film transistor), the ratio (opening ratio) of a pixel area in a screen can be increased as compared with a TFT. (2) Intersection of both signal lines Since the display has a small number of display line defects due to insulation failure due to its structure and its manufacturing process is simple, it is possible to improve the manufacturing yield. (3) There are problems with TFTs and diodes using amorphous silicon. No photo-excitation current is generated, and there is no need to shield the MIM element from external light.

FIG. 4 shows a basic structure of a conventional MIM element. In the figure, reference numeral 40 denotes an MIM element, a first electrode 42 made of Ta or the like is formed on a substrate 41 by sputtering or the like, and a non-linear element made of Ta ₂ O ₅ is formed on the surface of the first electrode 42 by anodic oxidation. A resistance layer 43 is formed. A second electrode 44 made of Cr or the like is formed on the non-linear resistance layer 43. Further, an ITO (Indium-Tin-Oxid) is formed on the substrate 41.
A pixel electrode 46 made of a transparent conductive film such as e) is formed so as to be electrically connected to the second electrode 44.

A substrate having such an MIM element is bonded to a counter substrate provided with a counter electrode in a stripe shape, and liquid crystal is injected into a gap between the two substrates and sealed, whereby a liquid crystal panel is manufactured. .

However, in such a structure of the MIM element, the edge portion and the side end surface 47 of the first electrode 42 are
Since it is used as an element driving unit functioning as an M element, there is a problem that the characteristics of the element are varied or deteriorated due to the deterioration of the coverage of the nonlinear resistance layer particularly at the edge portion.

Japanese Patent Application Laid-Open No. 1-2270027 discloses another conventional MIM element structure as shown in FIG. Also in this MIM element 50, its T
A first electrode 52 made of a or the like is formed on a substrate 51, and a non-linear resistance layer 53 made of Ta ₂ O ₅ is formed on the surface of the first electrode 52. In the MIM element, a second electrode 56 is formed on the non-linear resistance layer 53 via an insulating intermediate layer 54, and the second electrode 56 is formed by a contact hole formed in the intermediate layer 54. It is connected to the nonlinear resistance layer 53 via 55. Further, a pixel electrode 57 is formed on the intermediate layer 54 so as to be electrically connected to the second electrode 56.

[0013]

By the way, in the MIM element 50 having the structure as shown in FIG. 5, the edge portion and the side end face of the first electrode 52 are not used as the element driving section functioning as the MIM element. Therefore, even if the coverage of the non-linear resistance layer 53 or the insulating film 54 is deteriorated at the edge portion, it is possible to prevent variation and deterioration of element characteristics. However, it is necessary to provide the intermediate layer 54 and form the contact hole 55 by etching or the like, which complicates the process and increases the number of required masks.
There is a problem that the production yield as a liquid crystal panel is reduced.

The present invention has been made to solve the above-mentioned conventional problems, and has a simple manufacturing process.
Moreover, it is an object of the present invention to provide a liquid crystal display device having a non-linear element free from variations and deterioration in characteristics.

[0015]

A liquid crystal display device according to the present invention comprises a first substrate having a plurality of row electrodes, and a plurality of a plurality of row electrodes arranged to face the first substrate and intersecting the row electrodes. A second substrate having column electrodes, a liquid crystal layer sandwiched between the two substrates, and a plurality of pixel electrodes arranged in a matrix at an intersection of the two electrodes on one of the two substrates And a plurality of switching non-linear elements connected between the pixel electrode and a row electrode or a column electrode. The switching nonlinear element includes: a first electrode formed on the one substrate; a planarization film formed on the one substrate so as to fill between the first electrodes; And a second electrode formed on the non-linear resistance layer, wherein the thickness D1 of the planarizing film and the thickness D2 of the first electrode satisfy the relationship of D1> D2 . Is a two-terminal nonlinear element that satisfies the following. Thereby, the above object is achieved.

In the present invention, the non-linear resistance layer includes:
It is preferable that the first electrode is formed of an anodic oxide film formed by anodic oxidation.

A liquid crystal display device according to the present invention has a first substrate having a plurality of row electrodes and a second substrate having a plurality of column electrodes arranged to face the first substrate and intersecting the row electrodes. Substrate, a liquid crystal layer sandwiched between the two substrates, a plurality of pixel electrodes arranged in a matrix at the intersection of the two electrodes on one of the two substrates, and the pixel electrode A plurality of switching non-linear elements connected between the row electrodes or the column electrodes. The switching nonlinear element includes a first electrode formed on the one substrate, a planarization film formed on the one substrate so as to fill the space between the first electrodes, A non-linear resistance layer formed so as to cover the flattening film, and a second electrode formed on the non-linear resistance layer;
1 and a film thickness D2 of the first electrode is a two-terminal nonlinear element that satisfies the relationship of D1> D2 . Thereby, the above object is achieved.

In the present invention, it is preferable that the nonlinear resistance layer covering the first electrode and the flattening film is made of zinc sulfide.

In the present invention, the flattening film is preferably made of a resist.

[0020]

According to the present invention, a switching two-terminal nonlinear element connected between a pixel electrode and a row electrode or a column electrode is embedded in a first electrode thereof with a flattening film, and a non-linear element is formed on the first electrode. A structure in which a second electrode is formed with a resistance layer interposed therebetween, and a film thickness D1 of the planarizing film and a film thickness D of the first electrode
2 satisfy the relationship of D1> D2 .
The edge portion and the side end portion of the electrode do not face the second electrode, and this portion does not function as a switching element. For this reason, variation and deterioration of the element characteristics can be prevented.

When a resist is used as the flattening film, the patterning of the flattening film can be simplified.

For example, by forming a first electrode on the substrate, applying a resist, and patterning the resist using exposure from the back surface of the substrate,
A mask is not required for forming the flattening film. As a result, only two masks are required for forming the first electrode and the second electrode of the two-terminal nonlinear element, and the manufacturing process can be simplified.

Further, by using an anodic oxide film formed by anodizing the surface of the first electrode as the nonlinear resistance layer,
The non-linear resistance layer can be easily formed.

Further, by using a zinc sulfide film as the non-linear resistance layer, it is possible to obtain a large on / off ratio as compared with an MIM element using tantalum oxide, and to obtain steep element characteristics. In addition, since the zinc sulfide film has a lower dielectric constant than that of tantalum oxide, the capacitance ratio of the nonlinear resistance element to the liquid crystal can be reduced, and the voltage can be efficiently applied to the element.

[0025]

Embodiments of the present invention will be described below.

FIG. 1 is a plan view for explaining a liquid crystal display device according to a first embodiment of the present invention.
5 shows a pixel portion of an element-side substrate having a non-linear element.
FIG. 2 is a sectional view taken along line AA ′ of FIG.

In the drawing, reference numeral 101 denotes a MIM type nonlinear element of the present embodiment, which includes a first electrode 12a formed on an insulating substrate 11 made of glass or the like, and a non-linear resistance layer 14 formed on the first electrode 12a . And a second electrode 15 a formed on the non-linear resistance layer 14. Here, the first electrode 12a and the non-linear resistance layer 14 are
The surface of the nonlinear resistance layer 14 is flush with the surface of the flattening layer 13. The first electrode 12a is formed integrally with the column electrode 12 formed on the insulating substrate 11, and the second electrode 15a is formed integrally with the planarizing layer 1.
The pixel electrode 15 is formed integrally with the pixel electrode 15 formed on the pixel electrode 3.

In the liquid crystal display device of this embodiment, the liquid crystal panel is formed by bonding an opposing substrate provided with stripe-shaped row electrodes to the element-side substrate 11 on which the MIM element 101 is formed. It has a structure in which liquid crystal is injected and sealed between them.

Next, a method of manufacturing an MIM element and the like on the above-mentioned insulating substrate will be described.

First, a metal film, for example, a Ta film is formed on an insulating substrate 11 made of glass or the like by sputtering or CVD.
It is formed by a thin film forming method such as a vapor deposition method.
Here, the thickness of the Ta film is 300 nm.

Next, the Ta film is patterned to integrally form the column electrode 12 and the first electrode 12a of the MIM element.

Next, a negative resist is applied to the entire surface of the insulating substrate 11 with a thickness larger than the thickness of the first electrode 12a or the like (Ta film), and the resist is exposed from the rear surface of the substrate and developed. Thereby, the flattening film 13 is formed so as to fill the space between the first electrodes 12a. Here, the film thickness D1 of the planarizing film 13 is D1 ≧ D1 with respect to the film thickness D2 of the first electrode (Ta film).
D2 is desirable. For example, when the film thickness D2 of the first electrode is 300 nm, the film thickness D1 of the planarizing film 13 is about 300 nm to 350 nm.

Here, after the exposure and development of the resist, a heat treatment may be performed to make the edge portion of the flattening film 13 tapered. Also, during the exposure from the back side of the substrate,
A structure may be used in which the planarizing film 13 covers the end of the first electrode 12 by using light that goes around the upper portion of the first electrode 12. In this case, the area of the nonlinear resistance layer 14 in contact with the first electrode 12 is reduced, and an MIM element having a small element capacitance can be formed. Furthermore, if the surface of the planarizing film 13 is made uneven, and if the pixel electrode 15 formed thereon is made uneven, light reflected on the pixel electrode 15 will be scattered, and the display quality can be improved. it can.

Thereafter, the surface of the first electrode 12a is anodized to form a non-linear resistance layer 14 having a thickness of about 50 nm thereon.

Next, a metal such as Al is formed, and is patterned to form the pixel electrode 15 and the second electrode 15a of the MIM element 101 integrally. Thus, the MIM element 101 including the first electrode 12a, the non-linear resistance layer 14, and the second electrode 15a is formed. At this time, if the capacitance of the liquid crystal material is CL and the capacitance of the MIM element is CD, CL≫CD
The area where the second electrode 15a faces the first electrode 12a is determined so that

Subsequently, the substrate 11 on which the MIM element is formed is
An alignment film (not shown) is applied thereon, and after curing, an alignment process is performed to complete an element-side substrate.

On the other hand, as the counter substrate, a transparent conductive film such as ITO is formed on an insulating substrate made of glass or the like, and this is patterned to form a counter electrode (row electrode), and an alignment film is formed thereon. It is prepared by applying and orienting after curing.

The element-side substrate and the opposing-side substrate manufactured as described above are bonded together so that the electrodes of the two substrates intersect, and liquid crystal is injected into a gap between the two substrates to seal the liquid crystal panel. Make it.

In the liquid crystal display device of this embodiment having such a configuration, when a voltage V is applied between the column electrode 12 and the first electrode 12a and the opposing electrode (row electrode), the voltage V is applied to the MIM element. Voltage VD becomes CLV / (CL + CD), and CLV
At the time of ≫CD, a sufficient voltage is applied to the MIM element.
When the voltage VD applied to this element exceeds the threshold voltage VTH, the MIM element becomes conductive, the liquid crystal cell capacitance CL is charged, and display is performed on the liquid crystal panel.

FIG. 6 shows the IV of the MIM element of this embodiment.
The characteristic is shown by curve X1, which is shown in FIG.
In addition, a non-linear element which is equivalent to the IV characteristic of the conventional MIM element shown in (1), has no variation or deterioration of the MIM element characteristic, and has a simple manufacturing process was obtained.

As described above, in the present embodiment, the two-terminal switching element 101 connected between the pixel electrode 15 and the column electrode 12 is used for the switching, and the first electrode 12 a is used for the flattening film 1.
3 and the second electrode 15a is formed on the first electrode 12a via the non-linear resistance layer 14, so that the edge and the end of the first electrode 12a are not used as the element driving section of the MIM element. The structure can be realized. For this reason, it is possible to prevent variations and deterioration of element characteristics,
An MIM element having steep IV characteristics can be obtained.

Further, since a resist is used as the flattening film, the process of patterning the flattening film can be simplified.

In particular, since the backside exposure method is used, a mask is not required for forming the flattening film, and only two masks are required for forming the first and second electrodes, which simplifies the manufacturing process. Thus, the yield of the liquid crystal display device can be improved.

Furthermore, since the pixel electrode 15 is formed on the flattening film 13, it is possible to prevent poor alignment by the pixel electrode 15 in the rubbing step after forming the alignment film, and to obtain a good display screen.

Further, since an anodic oxide film formed by anodizing the surface of the first electrode is used as the nonlinear resistance layer, the formation of the nonlinear resistance layer is easy.

Embodiment 2 FIG. 3 is a view for explaining a liquid crystal display device according to a second embodiment of the present invention, and shows a cross-sectional structure of a portion corresponding to line AA ′ in FIG. I have. In the figure, reference numeral 102 denotes a two-terminal non-linear element according to the present embodiment, and an insulating substrate 1 such as glass.
A first electrode 12a formed on the first electrode 12a;
A non-linear resistance layer 24 formed thereon and the non-linear resistance layer 2
4 on the second electrode 15a. Here, the first electrode 12a is formed on the flattening layer 1 formed on the insulating substrate 11 as in the first embodiment.
3, the non-linear resistance layer 24
Are formed on the first electrode 12a and the planarization layer 13. For this reason, the pixel electrode 15 is disposed on the nonlinear resistance layer 24. Other configurations are the same as those of the liquid crystal display of the first embodiment.

Next, a method of manufacturing a non-linear element or the like on the insulating substrate will be described.

First, a metal film such as Ta is formed on an insulating substrate 11 made of glass or the like to a thickness of 300 nm in the same manner as in the first embodiment, and is patterned into a predetermined shape. The electrode 12 and the first electrode 12a of the nonlinear element are formed integrally.

Next, a negative resist is applied to the entire surface of the insulating substrate 11 with a thickness larger than the thickness of the first electrode 12a or the like (Ta film), and the resist is exposed from the back surface of the substrate and developed. Thereby, the flattening film 13 is formed so as to fill the space between the first electrodes 12a. Here, the film thickness D1 of the planarizing film 13 is D1 ≧ D1 with respect to the film thickness D2 of the first electrode (Ta film).
D2 is desirable. For example, the film thickness D2 of the first electrode
Is 300 nm, the thickness D1 of the planarizing film 13 is
Is set to about 300 nm to 350 nm.

As in the case of the first embodiment, after the exposure and development of the resist, a heat treatment may be performed to make the edge of the flattening film 13 tapered. Further, a structure may be used in which the planarizing film 13 covers the end of the first electrode 12a by using light that goes around the upper part of the first electrode 12a during the exposure from the back side of the substrate. Thereby, a non-linear element having a small element capacitance can be formed. Further, by making the surface of the planarizing film 13 uneven, the pixel electrode 15 formed thereon can be made uneven to improve display quality.

Thereafter, in the present embodiment, the first electrodes 12a,
A non-linear resistance layer 24 is formed by depositing zinc sulfide (ZnS) to a predetermined thickness (50 nm) on the entire surface of the substrate so as to cover the surface of the column electrode 12 and the flattening film 13. Here, the ZnS layer can be formed by a thin film forming method such as a sputtering method, a CVD method, and an evaporation method. When formed by a sputtering method, high-purity Zn is used as a target.
The substrate is set in an RF sputtering apparatus using an S firing target. Ar gas was used as a sputtering gas, and the sputtering conditions were a substrate temperature of 250 ° C. and a gas pressure of 10P.
a, Sputtering is performed with an input power of 750 W.
As the non-linear resistance layer 24, an insulating film such as SiN _x may be formed on the entire surface of the substrate instead of ZnS.

Next, a metal such as Al is applied to the nonlinear resistance layer 24.
The pixel electrode 15 and the second electrode 15a of the non-linear element are formed integrally by patterning this. At this time, if the capacitance of the liquid crystal material is CL and the capacitance of the nonlinear element is CD, the second electrode 15a is connected to the first electrode 15a so that CLＣCD.
The area facing the electrode 12a is determined.

Thus, the nonlinear element 102 composed of the first electrode 12a, the nonlinear resistance layer 24, and the second electrode 15a
Is formed.

Thereafter, similarly to the first embodiment, an alignment film (not shown) is applied on the substrate on which the nonlinear element is formed, and after the curing, an alignment process is performed to produce an element-side substrate. This is bonded to a counter substrate on which a counter electrode and an alignment film are formed, and a liquid crystal of, for example, a white tailor type is injected and sealed between the two substrates to complete a liquid crystal panel.

In the liquid crystal display device having the liquid crystal panel of the present embodiment, when the voltage V is applied between the first electrode 12a and the opposing electrode, the voltage VD applied to the nonlinear element becomes CLV
/ (CL + CD), and when CL≫CD, a sufficient voltage is applied to the nonlinear element. The voltage V applied to this element
When D exceeds the threshold voltage VTH, the nonlinear element becomes conductive, the liquid crystal cell capacitance CL is charged, and the display on the liquid crystal panel is performed.

FIG. 6 shows the IV characteristic of the nonlinear element formed in this embodiment by a curve X2. In this nonlinear element, ZnS is used for the nonlinear resistance layer 24, so that the IV The characteristics are steeper than those of the MIM element of the first embodiment.

Also in this embodiment, there is no variation or deterioration in the characteristics of the nonlinear element, and the manufacturing process of the nonlinear element is simple and the yield is good.

As described above, in this embodiment, in addition to the effect of the above-described embodiment, since the zinc sulfide film is used as the nonlinear resistance layer, a larger on / off ratio is obtained as compared with the MIM element using tantalum oxide. And steep device characteristics can be obtained. Further, since the zinc sulfide film has a lower dielectric constant than the tantalum oxide film, the capacitance ratio of the non-linear resistance element to the liquid crystal can be reduced, and the voltage can be efficiently applied to the element.

(Embodiment 3) In each of the above embodiments, a resist was used as the flattening film 13, but an inorganic insulating film such as SiO ₂ may be used as the flattening film.

For example, in the method for forming a nonlinear element having the structure shown in FIG. 2, after forming the first electrode 12a in the same manner as in the second embodiment, a positive resist is applied to the entire surface of the substrate, and the backside is exposed. And the development leaves the resist only on the first electrode 12a. Thereafter, an SiO ₂ film is deposited on the entire surface, the resist is removed, and the SiO ₂ film is lifted off. Thereby, S is filled so as to fill the space between the first electrodes 12a.
A flattening film made of an iO ₂ film is formed. Subsequent processes are the same as in the second embodiment.

Also in this embodiment, the masks required for forming the non-linear element include those used for forming the column electrode 12 and the first electrode 12a and those for the pixel electrode 15a.
And two electrodes used for forming the second electrode 15a, and the manufacturing process of the nonlinear element is simple as in the above embodiment.

In each of the above embodiments, the reflection type liquid crystal panel using metal as the material of the pixel electrode has been described as an example.
The liquid crystal panel may be of a transmission type using a transparent conductive film as a pixel electrode and a film transparent to visible light as a planarizing film.

[0063]

As described above, according to the present invention, a two-terminal switching element connected between a pixel electrode and a row electrode or a column electrode is embedded in the first electrode by a flattening film. A second electrode is formed on the first electrode with a non-linear resistance layer interposed therebetween, and the thickness D1 of the planarization film and the thickness D2 of the first electrode satisfy the relationship of D1> D2. Therefore, it is possible to form a non-linear element that does not use the edge and side end of the first electrode as an element driving section. Therefore, variation and deterioration of element characteristics can be prevented, and a nonlinear element having steep IV characteristics can be obtained.

Further, by using a resist as the flattening film, the process of patterning the flattening film can be simplified.

For example, when a backside exposure method is used, a mask is not required for forming a flattening film, and the required mask is the first mask.
Only two electrodes are formed when the electrodes and the second electrode are formed, so that the manufacturing process can be simplified and the yield of the liquid crystal display device can be improved.

Further, since the pixel electrode can be formed on a flat surface, it is possible to prevent poor alignment due to the pixel electrode in the rubbing step after forming the alignment film, and to obtain a good display screen.

Further, even if an inorganic film is used as the flattening film, the number of masks can be reduced to two by using the lift-off method, so that the yield can be improved by a simple manufacturing process.

Further, by using an anodic oxide film formed by anodizing the surface of the first electrode as the nonlinear resistance layer,
The formation of the nonlinear resistance layer can be facilitated.

Further, by using a zinc sulfide film as the nonlinear resistance layer, it is possible to obtain a large on / off ratio as compared with a nonlinear element using tantalum oxide, and to obtain steep element characteristics. Further, since the zinc sulfide film has a lower dielectric constant than the tantalum oxide film, the capacitance ratio of the non-linear resistance element to the liquid crystal can be reduced, and the voltage can be efficiently applied to the element.

[Brief description of the drawings]

FIG. 1 is a plan view illustrating a liquid crystal display according to a first embodiment of the present invention.

FIG. 2 is a diagram showing a cross-sectional structure taken along line AA ′ of FIG. 1;

FIG. 3 is a diagram for explaining a liquid crystal display device according to a second embodiment of the present invention, and shows a cross-sectional structure corresponding to the line AA ′ of FIG. 1;

FIG. 4 is a cross-sectional view illustrating a structure of a nonlinear element in a conventional liquid crystal display device.

FIG. 5 is a cross-sectional view showing the structure of another nonlinear element in a conventional liquid crystal display device.

FIG. 6 is a graph showing the IV characteristics of the nonlinear elements in the liquid crystal display devices according to the first and second embodiments.

[Explanation of symbols]

 Reference Signs List 11 Insulating substrate 12 Column electrode 12a First electrode of non-linear element 13 Flattening film 14, 24 Non-linear resistance layer 15 Pixel electrode 15a Second electrode of non-linear element 101, 102 Non-linear element

Claims (6)

(57) [Claims] A first substrate having a plurality of row electrodes; a second substrate having a plurality of column electrodes arranged to face the first substrate and intersecting the row electrodes; A liquid crystal layer sandwiched between the two electrodes; a plurality of pixel electrodes arranged in a matrix at an intersection of the two electrodes on one of the two substrates; A plurality of switching non-linear elements connected therebetween, the switching non-linear elements comprising: a first electrode formed on the one substrate; and a first electrode formed on the one substrate. A flattening film formed so as to be buried, a non-linear resistance layer formed on the first electrode, and a second electrode formed on the non-linear resistance layer; And the thickness D2 of the first electrode is D1> D
2. A liquid crystal display device which is a two-terminal nonlinear element satisfying the relationship of 2. 2. The liquid crystal display device according to claim 1, wherein the flattening film is made of a resist. 3. A first substrate having a plurality of row electrodes, and a first substrate having a plurality of row electrodes, the first substrate being opposed to the first substrate, and intersecting with the row electrodes.
A second substrate having a plurality of column electrodes, a liquid crystal layer sandwiched between the two substrates, and an intersection of the two electrodes on one of the two substrates
A plurality of pixel electrodes arranged in a matrix in the portion, and connected between the pixel electrode and a row electrode or a column electrode.
A plurality of switching non-linear elements, wherein the switching non-linear element is formed on the one substrate so as to fill a space between the first electrodes on the one substrate.
A flattened film , a non-linear resistance layer formed on the first electrode, and a second electrode formed on the non-linear resistance layer.
The thickness D1 of the carrier film and the thickness D2 of the first electrode are D1 ≧ D
2, the non-linear resistance layer is formed by anodizing the surface of the first electrode.
The liquid crystal display device is a two-terminal non-linear element made of an anodic oxide film . 4. A first substrate having a plurality of row electrodes, a second substrate having a plurality of column electrodes arranged to face the first substrate and intersecting with the row electrodes, and both substrates. A liquid crystal layer sandwiched between the two electrodes; a plurality of pixel electrodes arranged in a matrix at an intersection of the two electrodes on one of the two substrates; A plurality of switching non-linear elements connected therebetween, the switching non-linear elements comprising: a first electrode formed on the one substrate; and a first electrode formed on the one substrate. A planarizing film formed so as to be embedded, a non-linear resistance layer formed to cover the first electrode and the planarizing film, and a second electrode formed on the non-linear resistance layer; When the film thickness D1 of the film and the film thickness D2 of the first electrode are D1> D
2. A liquid crystal display device which is a two-terminal nonlinear element satisfying the relationship of 2. 5. The liquid crystal display device according to claim 4, wherein said flattening film is made of a resist. 6. The liquid crystal display device according to claim 4, wherein the non-linear resistance layer is formed of zinc sulfide.