JP3084482B2 - Magneto-optical element - Google Patents

Magneto-optical element

Info

Publication number
JP3084482B2
JP3084482B2 JP02338523A JP33852390A JP3084482B2 JP 3084482 B2 JP3084482 B2 JP 3084482B2 JP 02338523 A JP02338523 A JP 02338523A JP 33852390 A JP33852390 A JP 33852390A JP 3084482 B2 JP3084482 B2 JP 3084482B2
Authority
JP
Japan
Prior art keywords
crystal
magneto
plane
light
optical element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP02338523A
Other languages
Japanese (ja)
Other versions
JPH04204816A (en
Inventor
亨 及川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokin Corp
Original Assignee
Tokin Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokin Corp filed Critical Tokin Corp
Priority to JP02338523A priority Critical patent/JP3084482B2/en
Publication of JPH04204816A publication Critical patent/JPH04204816A/en
Application granted granted Critical
Publication of JP3084482B2 publication Critical patent/JP3084482B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は光アイソレータ,磁界センサ等のファラデー
回転子に用いられる磁気光学素子に関する。
Description: TECHNICAL FIELD The present invention relates to a magneto-optical element used for a Faraday rotator such as an optical isolator and a magnetic field sensor.

[従来の技術] 従来,半磁性半導体Cd1-xMnxTe(0<x≦0.7)結晶
をブリッジマン法で作製した場合,双晶欠陥が発生する
ことが知られている。双晶欠陥を持つ結晶をファラデー
回転子として用いた場合,実用上充分な光透過率が得ら
れないという問題がある。双晶欠陥の発生はこの物質の
相変態に帰因するとされ,高温相である六方晶から低温
相の立方晶に相転移する際に,双晶になると説明されて
いる。
[Prior Art] Conventionally, when a semimagnetic semiconductor Cd 1-x Mn x Te (0 <x ≦ 0.7) crystal is manufactured by the Bridgman method, twin defects are known to occur. When a crystal having twin defects is used as a Faraday rotator, there is a problem that practically sufficient light transmittance cannot be obtained. The generation of twin defects is attributed to the phase transformation of this material, and it is described that when the phase transitions from hexagonal, which is a high-temperature phase, to cubic, which is a low-temperature phase, twins are formed.

従って,双晶欠陥をさけるために従来は溶解帯移動法
(THM法:Travelling Heater Method)を用いて相変態温
度以下での結晶成長を行っていた。
Therefore, in order to avoid twin defects, crystal growth has been conventionally performed below the phase transformation temperature using the melting zone transfer method (THM: Traveling Heater Method).

[発明が解決しようとする課題] しかしながら,THM法で作製した結晶は実用上充分な光
学特性が得られるが,ブリッジマン法に比べ成長速度が
1/10以下となるため,生産性に劣りコスト高になるとい
う欠点があった。
[Problems to be Solved by the Invention] However, although crystals produced by the THM method have practically sufficient optical characteristics, the growth rate is higher than that of the Bridgman method.
Since it is 1/10 or less, there is a disadvantage that productivity is poor and costs are high.

そこで,本発明の技術的課題は,生産性に優れたブリ
ッジマン法により作製したCd1-xMnxTe結晶でも実用上充
分な光透過率を確保し,低挿入損失のファラデー回転子
素子を提供することを目的とする。
Therefore, the technical problem of the present invention is to provide a Faraday rotator element having a low insertion loss and a sufficiently high light transmittance even with a Cd 1-x Mn x Te crystal manufactured by the Bridgman method having excellent productivity. The purpose is to provide.

[課題を解決するための手段] 本発明によれば、レーザ光を透過させる磁気光学素子
において、ブリッジマン法で作製したカドミウム・マン
ガン・テルルCd1-xMnxTe(0<x≦0.7)単結晶と、該
単結晶のミラー指数が{111}の結晶面に前記レーザ光
を入射させる入射手段とを有することを特徴とする磁気
光学素子が得られる。
[Means for Solving the Problems] According to the present invention, in a magneto-optical element that transmits laser light, a cadmium-manganese-tellurium Cd 1-x MnxTe (0 <x ≦ 0.7) single crystal produced by the Bridgman method And a means for making the laser light incident on a crystal plane of the single crystal having a mirror index of {111}.

[作用] 本発明は光アイソレータ磁界センサ等に用いられる磁
気光学素子として,ブリッジマン法により育成したCd
1-xMnxTe(0<x≦0.7)単結晶のミラー指数が{111}
の結晶面に垂直に入射手段によりレーザ光を入射させる
ようにしたもので,{111}面を用いることで双晶欠陥
があるにもかかわらず,光透過率が減少しない。
[Operation] The present invention provides a Cd grown by the Bridgman method as a magneto-optical element used for an optical isolator magnetic field sensor or the like.
The Miller index of 1-x Mn x Te (0 <x ≦ 0.7) single crystal is {111}
The laser beam is made incident on the crystal plane perpendicularly to the crystal plane by using the {111} plane. Even though there are twin defects, the light transmittance does not decrease.

すなわち,従来,この結晶のベルデ定数は結晶面の方
位に依存しないことから,任意の面でファラデー回転子
を構成していた。一方,この結晶に発生する双晶欠陥は
{111}方向に垂直に積み重なった規則的な構造を有し
ている。
That is, conventionally, since the Verdet constant of this crystal does not depend on the orientation of the crystal plane, the Faraday rotator has been constituted by an arbitrary plane. On the other hand, the twin defects generated in this crystal have a regular structure stacked vertically in the {111} direction.

入射手段により,{111}面以外で光を面に垂直入射
させた場合,光は双晶境界で回折され,透過光は広がっ
たビームになるため,受光面には透過光の一部しか到達
しないことで,これが光透過率の減少の原因となる。
When light is perpendicularly incident on the surface other than the {111} plane by the incident means, the light is diffracted at the twin boundary and the transmitted light becomes a spread beam, so only a part of the transmitted light reaches the light receiving surface Not doing so causes a decrease in light transmittance.

そこで,入射手段により,{111}面に垂直入射させ
た場合,光は双晶境界に当たることがないため,回折は
起こらず,ビーム径の変化がないので,光透過率は双晶
のない結晶と同じになる。
Therefore, when the light is perpendicularly incident on the {111} plane by the incidence means, since the light does not hit the twin boundary, no diffraction occurs and the beam diameter does not change. Will be the same as

[実施例] 以下に本発明を一実施例を用いて具体的に説明する。
ブリッジマン法により組成Cd1-xMnxTe(x=0.2,0.45)
の単結晶を育成した。これらの結晶は{111}方向に約1
0μm間隔で双晶面の重なった構造を有していた。双晶
面に平行な{111}面,及びそれに垂直な{110}面,ラ
ンダムに決めた面でそれぞれ切り出し光学研磨を行い試
料を作製した。試料の厚さは全て1.00mmとした。受光素
子の受光面積を5mm×5mmとし,入射手段から波長633nm,
850nmでビーム径1mmのレーザを用いて光透過率を測定し
た。
EXAMPLES Hereinafter, the present invention will be specifically described using one example.
Composition Cd 1-x Mn x Te (x = 0.2,0.45) by Bridgman method
Was grown. These crystals have about 1 in the {111} direction.
It had a structure in which twin planes overlapped at 0 μm intervals. Samples were prepared by cutting out the {111} plane parallel to the twin plane, the {110} plane perpendicular to the {111} plane, and a randomly determined plane, and performing optical polishing. The thickness of each sample was 1.00 mm. The light receiving area of the light receiving element is 5 mm × 5 mm, the wavelength is 633 nm,
The light transmittance was measured using a laser having a beam diameter of 1 mm at 850 nm.

比較のためにTHM法で育成した双晶欠陥のない同じ組
成,厚さを持つ試料でも同様に光透過率を測定した。測
定の結果を第3図,第4図及び第5図に示す。
For comparison, the light transmittance was similarly measured for a sample having the same composition and thickness without twin defects grown by the THM method. The measurement results are shown in FIGS. 3, 4 and 5.

以上の測定結果,いずれの波長,組成においても{11
1}面にレーザ光を入射させた場合は試料と受光素子間
の距離を変えても光透過率は変化せず,光路長の大きな
デバイスに使用する場合に特に有利になる。透過率の大
きさはTHM法で育成したものと同じレベルになっていて
光アイソレータ,磁界センサ等に必要なレベルが得られ
た。
As a result of the above measurement, at all wavelengths and compositions,
When the laser beam is incident on the 1} surface, the light transmittance does not change even if the distance between the sample and the light receiving element is changed, which is particularly advantageous when used in a device having a large optical path length. The magnitude of the transmittance was the same level as that grown by the THM method, and the level required for optical isolators, magnetic field sensors, etc. was obtained.

[発明の効果] 以上述べたごとく本発明によれば,低挿入損失を有す
る磁気光学素子を低コストで提供することが可能とな
る。
[Effects of the Invention] As described above, according to the present invention, a magneto-optical element having low insertion loss can be provided at low cost.

【図面の簡単な説明】[Brief description of the drawings]

第1図及び第2図は,発明の作用を説明するための概念
図であり,第2図は{111}面以外に光を入射させた場
合,第1図は{111}面の場合を示す。 第3図,第4図及び第5図は試料の実測光透過率を反射
率を考慮して補正した値で示したものである。単位は%
(パーセント)。第3図は組成Cd0.8Mn0.2Teの結晶を波
長850nmで測定したものである。第4図は組成Cd0.55Mn
0.45Teの結晶を波長633nmで測定したものである。第5
図は組成Cd0.55Mn0.45Teの結晶を波長850nmで測定した
ものである。
1 and 2 are conceptual diagrams for explaining the operation of the present invention. FIG. 2 shows a case where light is incident on a plane other than the {111} plane, and FIG. Show. FIGS. 3, 4 and 5 show the measured light transmittance of the sample as a value corrected in consideration of the reflectance. Units%
(percent). FIG. 3 shows a result of measuring a crystal having a composition of Cd 0.8 Mn 0.2 Te at a wavelength of 850 nm. Figure 4 shows the composition Cd 0.55 Mn
0.45 Te crystal was measured at a wavelength of 633 nm. Fifth
The figure shows a crystal having a composition of Cd 0.55 Mn 0.45 Te measured at a wavelength of 850 nm.

フロントページの続き (58)調査した分野(Int.Cl.7,DB名) G02F 1/09 501 G02B 27/28 JICSTファイル(JOIS)Continuation of the front page (58) Field surveyed (Int.Cl. 7 , DB name) G02F 1/09 501 G02B 27/28 JICST file (JOIS)

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】レーザ光を透過させる磁気光学素子におい
て、ブリッジマン法で作製したカドミウム・マンガン・
テルルCd1-xMnxTe(0<x≦0.7)単結晶と、該単結晶
のミラー指数が{111}の結晶面に前記レーザ光を入射
させる入射手段とを有することを特徴とする磁気光学素
子。
1. A magneto-optical device for transmitting laser light, comprising cadmium, manganese, and cadmium produced by the Bridgman method.
A magneto-optical element comprising: a tellurium Cd 1-x MnxTe (0 <x ≦ 0.7) single crystal; and an incidence means for causing the laser light to enter a crystal plane having a mirror index of {111}. .
JP02338523A 1990-11-30 1990-11-30 Magneto-optical element Expired - Fee Related JP3084482B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP02338523A JP3084482B2 (en) 1990-11-30 1990-11-30 Magneto-optical element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP02338523A JP3084482B2 (en) 1990-11-30 1990-11-30 Magneto-optical element

Publications (2)

Publication Number Publication Date
JPH04204816A JPH04204816A (en) 1992-07-27
JP3084482B2 true JP3084482B2 (en) 2000-09-04

Family

ID=18318965

Family Applications (1)

Application Number Title Priority Date Filing Date
JP02338523A Expired - Fee Related JP3084482B2 (en) 1990-11-30 1990-11-30 Magneto-optical element

Country Status (1)

Country Link
JP (1) JP3084482B2 (en)

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
平成2年電気学会全国大会講演論文集 10−114
日本応用磁気学会誌 Vol.12,No.2,1988 p.187−192
東北大学科学計測研究所報告 第36巻 第1号 p.29−38

Also Published As

Publication number Publication date
JPH04204816A (en) 1992-07-27

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