JP3084021B1 - Electronic component manufacturing method - Google Patents

Abstract

The present invention aims to further reduce the size of electronic components by making a semiconductor substrate thinner, to operate without any problem as an electronic circuit, and to have sufficient robustness even when used in a portable electronic device. Provided is a method for manufacturing an electronic component capable of manufacturing an electronic component having the same. SOLUTION: A first application step (step S12) of applying a sealing resin to a surface of the substrate on which the post is formed, on which the post is formed, and a back surface polishing step of polishing the back surface of the substrate (step S18). And a second application step of applying a sealing resin to the back surface of the substrate after polishing (step S20), and a separating step of cutting the substrate together with the sealing resin and separating into individual electronic components (step S26). And

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a diode, a transistor, an IC (Integrated Circuit), an LSI (Larg).
e Scale Integration) and other electronic components, especially mobile phones, personal computers (PCs), notebook computers, computer game machines, watches, electronic music boxes, navigation systems, small TVs, camera modules, etc. The present invention relates to a method for manufacturing an electronic component used for an application that requires the following.

[0002]

2. Description of the Related Art Conventionally, generally used electronic components such as ICs have a semiconductor element on which an electronic circuit is formed mounted on a lead frame, and electrodes of the electronic circuit and connection terminals for external connection are formed. Are connected by a wire bond or the like, and then molded by curing a solid epoxy resin sealing material melted in a mold. 2. Description of the Related Art In recent years, the penetration rate of devices requiring small size and light weight, such as mobile phones, has been increasing. In such equipment, the size, weight,
It is common to design electronic circuits, antennas, and the like so as to fit within the specifications after the specifications such as design are determined. The external dimensions and weight of electronic components used in equipment having such applications are extremely limited.

As described above, as electronic components become lighter and thinner in recent years, when sealing the electronic components, a semiconductor element or a film on which an electronic circuit is formed is used as an interposer, and wire bonding or wire bonding is performed on the interposer. Techniques have been devised in which after connection and mounting by bumps, sealing is performed by the above-described mold molding, or sealing with a liquid epoxy resin sealing material. In order to connect the electronic circuit formed inside and the electronic circuit formed on the motherboard to the electronic circuit created by this technology, solder balls electrically connected to the electronic circuit formed on the electronic component are connected. There has been a shift to a BGA (Ball Grid Array) in a formed form and a CSP (Chip Size Package) package in which electronic components have been further miniaturized.

Further, in recent years, a technique for obtaining a package of a wafer size level which has advanced the miniaturization of electronic components has been devised. In this technique, a post is formed on the wafer itself, a protective coating is applied with resin on the wiring formed on the wafer surface by a planar technique, and solder balls are formed on the post, and then cut individually by dicing. The package at the wafer size level is obtained. Note that the term “post” used in this specification refers to a device that electrically connects an electronic circuit formed on an electronic component and an electronic circuit formed on an external motherboard or the like.

According to this technique, the size of the package of the electronic component is the size of the semiconductor element itself, and the external dimensions of the electronic component are minimized. In addition, the thickness of the electronic component is extremely thin because the sealing resin layer is limited to the thickness of the height of the post and the thickness of the semiconductor substrate. It can be kept much smaller than the thickness of the part. For details of this technique, refer to, for example, Japanese Patent Application Laid-Open No. 10-79362.

[0006]

By the way, a wearable computer has recently been considered. This wearable computer is a computer that uses a miniaturized computer attached to a human like clothes. In order to realize such electronic devices,
Further, it is considered that the electronic device needs to be reduced in size and weight. In response to the demand for miniaturization and weight reduction, one way to further reduce the size of electronic components is to reduce the thickness of the wafer itself.

[0007] At present, semiconductor devices generally use a wafer of silicon or the like. The thickness of this wafer is 400
Micron (0.4 mm) or more. The reason why a wafer having such a thickness is used is that silicon or the like is a brittle substance like glass when the thickness is small. That is, in the planar technology, various steps such as a step of adding an n-type or p-type impurity to a part of the substrate, a step of applying a resist to form a pattern of an electronic circuit and developing the resist, and a wiring step are performed. After forming an electronic circuit on the semiconductor substrate,
If a very thin wafer is used, the wafer will be broken during these steps. Therefore, if the thickness is 0.4
It is virtually impossible to handle wafers thinner than mm.

However, the wafer is generally substantially 20 microns (0.0 μm) from the surface of the wafer on which the electronic circuits are formed.
It is said that if it has a thickness of about 2 mm), it functions as an electronic circuit without any problem. Therefore, if the thickness of the wafer on which the electronic circuits are formed can be made smaller than 0.4 mm, it is extremely advantageous when the electronic components are further downsized.

The present invention has been made in view of the above circumstances, and further reduces the size of electronic components by reducing the thickness of a semiconductor substrate, and operates as an electronic circuit without any problem. It is an object of the present invention to provide a method of manufacturing an electronic component capable of manufacturing an electronic component having robustness that can withstand even when used in a semiconductor device.

[0010]

In order to solve the above-mentioned problems, the present invention provides a first coating step of applying a sealing resin by printing to a surface of a semiconductor substrate on which a post is formed, on which the post is formed. When the a rear surface polishing step of polishing the back surface of the semiconductor substrate, a second coating step of coating by printing a sealing resin on the back surface of the semiconductor substrate after polishing, the sealing resin the semiconductor <br/> substrate And a separation step of cutting and separating into individual electronic components. Also,
The present invention is characterized by further comprising a curing step of curing the sealing resin applied in the first application step. Further, the present invention is characterized in that the method further comprises a surface polishing step of polishing the surface on which the sealing resin is applied before the back surface polishing step. Further, the present invention is characterized by further comprising a curing step of curing the sealing resin applied in the second application step. Further, the present invention is characterized by further comprising a connection ball forming step of forming a connection ball on the post before the separation step. Also,
The present invention is characterized in that the connection ball forming step includes a step of printing a solder paste on the post, a step of melting the printed solder paste, and then cooling the same . Further, the present invention is characterized in that the thickness of the stencil for printing used in the second coating step is set according to the curing shrinkage of the sealing resin used in the first coating step.

[0011]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a method for manufacturing an electronic circuit according to an embodiment of the present invention will be described in detail with reference to the drawings. FIG. 1 is a view showing a process procedure of a method of manufacturing an electronic circuit according to one embodiment of the present invention.

First, a step of forming a post on a wafer on which an electronic circuit is formed by a planar technique is performed (step S10). FIG. 2 is a perspective view showing an example of a wafer on which electronic circuits are formed by the planar technique. As shown in FIG. 2, a semiconductor element 12 is formed on the surface of the wafer 10. Usually, a plurality of semiconductor elements 12 on which the same electronic circuit is formed are formed on one wafer 10. The thickness of the wafer 10 is 0.4 mm or more. An insulating film such as a silicon oxide film is formed on the surface of each of the semiconductor elements 12, and a portion where an electrode pad for connecting an electronic circuit formed on the semiconductor element 12 to an external electronic circuit is formed, The silicon oxide film is removed by etching or the like and is exposed.

The post is formed at a location where the silicon oxide film is removed by etching or the like and is exposed. FIG. 3 is a sectional view of the wafer 10. As shown in FIG. 3, a plurality of posts 14 are formed on the semiconductor device 12 of the wafer 10. The method of forming the post 14 is not particularly limited. For example, a solder ball is provided by using a transfer method.

After the post 14 is formed, the post 1
A step of forming a sealing resin layer on the surface on which 4 is formed is performed (step S12). FIG. 4 is a view for explaining a step of forming a sealing resin layer on the surface on which the post 14 is formed. 4, reference numeral 16 denotes a stencil for performing stencil printing. The stencil has a hole for printing the semiconductor element 12 formed on the wafer 10 at one time. The diameter of this hole is slightly smaller than the diameter of the wafer 10. Reference numeral 18 denotes a liquid sealing resin used for sealing. The liquid sealing resin 18 is preferably one that can suppress the warpage of the wafer 10 after curing to be extremely small.

For example, if the diameter is 8 inches and the thickness is 4
When a liquid sealing resin is applied to the surface of the 00 μm wafer and the liquid sealing resin is cured, the warpage of the wafer 10 is preferably 1 mm or less. The liquid encapsulating resin 18 is manufactured by Nippon Lec Co., Ltd., which has a resin curing component containing 80% by weight or more of silica powder, a curing shrinkage of 0.1% or less, and a thermal expansion coefficient of 12 ppm or less. NP
R-785N is best. Reference numeral 20 denotes a squeegee that can reciprocate in the plane of the stencil 16.

When printing, first, the stencil 16 is placed in contact with the upper surface of the wafer 10. At this time, stencil 1
The stencil 16 is arranged so that the hole formed in 6 is located above the semiconductor element 12. That is, the stencil 16 is arranged so that the stencil 16 does not cover the semiconductor element 12. Next, stencil 1
The liquid sealing resin 18 is dropped on the stencil 6, and the squeegee 20 is moved along the stencil 16 to the method indicated by reference numeral D1 in the figure. By moving the squeegee 20 along the stencil 16, the liquid sealing resin 18 flows into the holes formed in the stencil 16 and the liquid sealing resin 1 flowing into the holes.
8 has the same height as the stencil 16 and the upper surface is flat.

Next, the relationship between the thickness of the stencil 16 defining the position of the upper surface of the liquid sealing resin 18 and the height of the post 14 will be described. FIG. 5 shows the thickness of the stencil 16 and the post 14.
FIG. 6 is a diagram for explaining a relationship with the height of the image. In the present embodiment, the thickness of the stencil 16 is not limited to a thickness greater than the height of the post 14. For example, FIG. 5A shows a liquid sealing resin 1 using a stencil 16 having a thickness greater than the height of the post 14.
FIG. 5B is a cross-sectional view showing a state after sealing No. 8 and FIG.
Is a stencil 16 having a thickness approximately equal to the height of the post 14.
FIG. 5C is a cross-sectional view showing a state after the liquid sealing resin 18 is sealed by using a stencil 16 having a thickness smaller than the height of the post 14. FIG. 4 is a cross-sectional view showing a state after sealing is performed.

As shown in FIG. 5C, when a stencil 16 having a thickness smaller than the height of the post 14 is used, the squeegee 20 is elastically deformed (for example, made of rubber). The post 14 protrudes, and the sealing resin is applied around the post. Step S12
The printing performed in the step is not limited to only one printing, and may be performed a plurality of times on one wafer. The printing of the sealing resin 18 may be performed under atmospheric pressure or may be performed in a vacuum state, but printing in a vacuum state is preferable. When printing is performed under atmospheric pressure, it is preferable to perform printing while heating. This is because air bubbles that get caught in the sealing resin 18 during printing are easily released.

Next, a step of curing the printed resin in step S12 is performed (step S14). This step is
For example, the sealing resin 18 is cured by drying with a hot air dryer (not shown). Through the above steps, the circuit is protected by the cured film of the sealing resin 18 and the posts are reinforced.
The strength of is increased.

Next, a step of polishing the surface of the wafer 10 on which the sealing resin 18 is printed to polish the post 14 buried in the sealing resin 18 is performed (step S16). FIG.
FIG. 4 is a view for explaining a step of polishing the post 14 by polishing. In FIG. 6, for easy understanding,
Only electronic components manufactured by performing the steps up to step S14 are shown in a sectional view, and are denoted by reference numeral 22.

As shown in FIG. 6, the electronic component 22 is mounted on the fixed flat plate 2 so that the printed surface of the sealing resin 18 faces upward.
4 and is fixedly mounted thereon. This fixed plate 24 is used to prevent the electronic component 22 from moving on the fixed plate 24 during polishing.
It is preferable that the electronic component 22 be vacuum-sucked. In FIG. 6, reference numeral 26 denotes a polishing apparatus. As this polishing apparatus, an ordinary wafer polishing apparatus can be used. In this step, after fixing the electronic component 22 to the fixed flat plate 24, the sealing resin 18 is polished by the polishing device 26, and if necessary, the post resin 14 is also polished to form a smooth surface.

Next, when the polishing of the sealing resin 18 is completed,
A step of polishing the back surface of the electronic component 22, that is, the back surface of the wafer 10, is performed (Step S18). FIG. 7 shows the electronic component 2
FIG. 4 is a diagram for explaining a step of polishing the back surface of No. 2; In this step, as shown in FIG. 7, the surface polished in step S16 is fixed to the fixing jig 30 with the surface on the lower side facing down. It is preferable that the fixing jig 30 be vacuum-adsorbed similarly to the fixing flat plate 24 in FIG. Further, the fixing jig 30 may be the same as the fixing flat plate 24 in FIG. Reference numeral 32 denotes a polishing device. The polishing apparatus 32 can perform polishing using the polishing apparatus 26 used when polishing the sealing resin 18 in step S16.

In FIG. 7, for the sake of easy understanding, only electronic components manufactured by performing the steps up to step S16 are shown in a sectional view, and are denoted by reference numeral 28. In this step, the electronic component 28 is fixed to the fixing jig 30 with the surface on which the sealing resin is printed facing downward, and then the back surface of the electronic component 28, that is, the back surface of the wafer 10 is Is polished to a predetermined thickness. For example, polishing is performed until the entire thickness of the electronic component 28 becomes 200 μm.

When the above steps are completed, the polished electronic component is removed from the fixing jig 30. The polished electronic component is as shown in FIG. FIG. 8 is a diagram showing the electronic component after double-side polishing. In FIG. 8, a double-side polished electronic component is shown in a cross-sectional view.
Is attached. When the electronic component 34 polished on both sides is separated from the fixing jig, a warp is generated as shown in FIG. This warpage is caused by shrinkage when the sealing resin printed on the surface on which the posts 14 are formed is cured.

Next, a step of applying a resin to the surface polished in step S18 is performed to reduce the warpage and strengthen the electronic component 34 (step S20). FIG.
It is a figure for explaining the process of applying resin to the surface polished in process S18. In FIG. 9, reference numeral 36 denotes a suction fixing flat plate for fixing the electronic component 34. As shown in FIG. 8, the suction-fixed flat plate 36 is warped in the electronic component 34 after the double-side polishing, so that the electronic component 34 is flattened and the electronic component 34 is fixed so as not to move during printing. Used for

Reference numeral 38 denotes a stencil for performing stencil printing. The stencil 38 has a hole for printing the back surface of the electronic component 34. The diameter of this hole is
The diameter is slightly smaller than the diameter of 0. Numeral 40 is a liquid sealing resin used for sealing. The sealing resin 40 has a contraction stress sufficient to correct the warpage of the electronic component 34 after curing. For example, step S1
The same resin as the sealing resin 18 used when sealing the surface of the wafer 10 on which the post 14 is formed in 2 is used. The warpage of the electronic component 34 can also be achieved by controlling the thickness of the sealing resin 40 to be applied. In this case, the coating thickness is controlled by controlling the thickness of the stencil 38.

As long as the warpage of the electronic component 34 can be corrected, a resin different from the sealing resin 18 may be used as the sealing resin 40. Reference numeral 42 denotes a squeegee that can reciprocate in the plane of the stencil 38. The printing is performed under the atmospheric pressure or the vacuum state as in the step S12, but is preferably performed under the vacuum state in consideration of the reliability of the packaging.

When printing, first, the electronic component 34 is arranged at a predetermined position on the adsorption fixed plate 36 with the surface on which the post 14 is formed and the sealing resin 18 printed on the lower side. When the electronic component 34 is disposed on the suction fixed plate 36,
The electronic component 34 is flattened. Next, the stencil 38 is arranged in contact with the back surface of the electronic component 34, that is, the back surface of the wafer 10. When the stencil 38 is placed at a predetermined position, the stencil 38
The liquid sealing resin 40 is dropped on the squeegee 42, and the squeegee 42 is moved along the stencil 38 in the direction indicated by the symbol D2 in the figure. By moving the squeegee 42 along the stencil 38, the liquid sealing resin 40 flows into the holes formed in the stencil 38, and the liquid sealing resin 4 flowing into the holes.
0 has the same height as the stencil 38, and the upper surface is flat. The method of applying the sealing resin 40 to the back surface of the electronic component 34 is not limited to stencil printing, but may be performed by another method. For example, spray coating, spin coating, mold molding and the like can be mentioned.

Next, the sealing resin 40 applied in step S20
Is performed (Step S22). This step is performed, for example, using a hot air dryer (not shown).
0 is cured by drying. This sealing resin 40
Is cured, the warpage that has occurred in the electronic component 34 can be corrected. Through the above steps, the hardened sealing resin 18 and the sealing resin 40 are formed on the front and back surfaces of the electronic component, so that the strength of the wafer 10 is increased. Through the steps up to step S22, it is possible to obtain the wafer 10 on which a plurality of the semiconductor elements 12 each having the sealing resin 18 printed on the surface on which the post 14 is formed and the sealing resin 40 printed on the back surface are formed. it can.

Next, a step of forming a connection ball for electrically connecting an electronic circuit formed inside the semiconductor element 12 and an electronic circuit formed on an external motherboard (not shown) is performed. (Step S24). In this step, a solder ball having a predetermined diameter is sealed with the sealing resin 18.
It is mounted on a post 14 that is exposed on the surface (see FIG. 10). In order to mount the solder ball 44 on the post 14, a ball mounter (not shown) may be used. However, when the pitch of the post 14 becomes 0.5 mm or less, the diameter becomes smaller than 0.3 mm. You need a small ball.
Therefore, when the pitch becomes narrow to this extent, a predetermined amount of solder paste is accurately loaded on the post 14 and reflowed (not shown), rather than mounting the solder ball using a ball mounter. 44 is more preferably formed. In this case, in order to mount the solder paste on the post 14, it is preferable to mount the solder paste by printing using a predetermined stencil and a squeegee. At this time, this method is possible because the wafer is kept smooth.

Finally, a step of forming the electronic component 48 by cutting the electronic component to individually separate the semiconductor elements 12 is performed (step S26). FIG. 10 is a diagram illustrating a process of forming the electronic component 48 by separating the semiconductor elements 12 individually. In FIG. 10, reference numeral 46 denotes a dicing device. In order to form an electronic component 48, the semiconductor elements 12 are individually separated by cutting using the dicing device 46. Note that a normal dicing device can be used for cutting, but a laser cutting device using a laser may be used.

The method for manufacturing an electronic component according to one embodiment of the present invention has been described. Step S12 and step S2
0, the sealing resin 18 and the sealing resin 40 are printed, but after these steps, the printed sealing resin 18 and the sealing resin 18 are printed.
A step of removing air bubbles mixed in the sealing resin 40 may be provided.

[0033]

EXAMPLES The inventor of the present application actually carried out the above embodiment. Hereinafter, the results of the implementation will be described. In the present embodiment, a wafer having a thickness of 725 μm and a diameter of 8 inches was used, and posts having a diameter of 0.2, a height of 100 μm, and a pitch of 0.4 mm were formed on the wafer. Step S in FIG.
12 and sealing resin 18, 40 used in step S20
Used a resin called NPR-785N manufactured by Nippon Lec Co., Ltd. This resin has a resin curing component containing 80% by weight or more of silica powder, a curing shrinkage of 0.1% or less, and a thermal expansion coefficient of 12 ppm or less.

The printing apparatus used was a vacuum stencil printing machine VPES manufactured by Nippon Lec Co., Ltd. The stencil used for printing is a stencil made of stainless steel and has an opening (hole) of 7.6 inches. Further, the thickness of the stencil 16 used in step S12 is 0.1 mm, and the thickness of the stencil 38 used in step S20 is 0.05 mm.

In step S24, the connection balls are formed by using a solder paste. In this method, a solder paste is printed on an electronic component. At this time, the stencil used for printing is a stainless stencil having a thickness of 0.15 mm.
An opening having a pitch of 0.15 and a pitch of 0.4 mm is provided at a position corresponding to the post 14. The squeegee used at this time is a rubber squeegee having a hardness of 90 °.

The sealing resin is printed on the upper surface of the wafer on which the above-mentioned posts are formed.
At PES, set the atmospheric pressure to 1 torr vacuum,
Printing was performed using a stencil having a thickness of 0.1 mm. Then, after returning to normal pressure, the printed electronic component was taken out of the vacuum stencil printer VPES, dried at 100 ° C. for 1 hour, and further dried at 150 ° C. for 3 hours to cure the sealing resin.

The warpage of the wafer after the curing of the sealing resin was 50 μm at the end. Next, the surface on which the sealing resin was printed was polished by 25 μm to smooth the surface, and the post surface was polished. At this point, the total thickness of the electronic components is 8
It became 00 μm. Then, flip this electronic component,
600 μm from the back side of the electronic component, that is, from the back side of the wafer
Polished. The total thickness of the electronic component after polishing the back surface of the electronic component was 200 μm. At this time, the warpage of the electronic component was 120 μm.

Subsequently, NPR-785N was similarly stencil-printed on the polished surface of the back surface of the electronic component using the VPES at room temperature and pressure using a stencil having a thickness of 0.05 mm, and cured under the same curing conditions. I let it. After printing the sealing resin on both surfaces of the wafer, the warpage of the electronic component was 2 μm. Thereafter, the wafer was turned over again, and the solder paste was printed and supplied on the post by PES using the stencil for printing the solder paste with the surface on which the post was formed facing upward.

Thereafter, the solder paste was melted through a reflow furnace and cooled to form solder balls on the posts. The height of the formed solder ball is
0.15 mm. Finally, the package is cut and divided into individual packages by dicing.
A chip size package of 0 μm was obtained.

[0040]

As described above, according to the present invention, since a step of polishing a semiconductor substrate is provided, an electronic component having a smaller thickness can be manufactured. Furthermore, of building an electronic circuit in a semiconductor substrate, since as polished during sealing, there is an effect that can be producing is such ku thin electronic circuit included in the semiconductor substrate is cracked. Further, not only the surface post is formed, since such coating also sealing resin on the back surface of the semiconductor substrate, so enabling a separation step while no warpage occurs in the semiconductor substrate, the process defect rate It can be dramatically improved. In addition , when the connection balls are formed, they are formed by a step of printing a solder paste, so that there is an effect that the connection balls can be formed in a smaller and more stable shape. Therefore, there is an effect that an electronic component having a small overall thickness can be easily and economically produced. Also,
The sealing resin is applied not only on the surface where the posts are formed but also on the back surface of the semiconductor substrate, so that not only the surface on which the electronic circuit is formed but also the back surface is protected. Thus, there is an effect that an electronic component having high reliability that can withstand the external pressure sufficiently can be manufactured.

[Brief description of the drawings]

FIG. 1 is a diagram illustrating a process procedure of a method of manufacturing an electronic circuit according to an embodiment of the present invention.

FIG. 2 is a perspective view showing an example of a wafer on which electronic circuits are formed by a planar technique.

FIG. 3 is a cross-sectional view of the wafer 10.

FIG. 4 is a view for explaining a step of forming a sealing resin layer on the surface on which the post 14 is formed.

FIG. 5 is a diagram for explaining the relationship between the thickness of the stencil 16 and the height of the post 14.

FIG. 6 is a diagram illustrating a step of polishing the post 14 by polishing.

FIG. 7 is a view for explaining a step of polishing the back surface of the electronic component 22.

FIG. 8 is a diagram showing an electronic component after double-side polishing.

FIG. 9 is a view for explaining a step of applying a resin to the surface polished in step S18.

FIG. 10 is a diagram illustrating a process of forming an electronic component 48 by separating the semiconductor elements 12 individually.

[Explanation of symbols]

Reference Signs List 10 wafer ( semiconductor substrate) 14 post 18 sealing resin 38 stencil 40 sealing resin 44 solder ball (connection ball) 48 electronic component

Continuation of the front page (56) References JP-A-9-219421 (JP, A) JP-A-11-67979 (JP, A) JP-A 10-79362 (JP, A) (58) Fields studied (Int .Cl. ⁷ , DB name) H01L 21 / 56,21 / 60 H01L 23 / 12,23 / 28

Claims (7)

(57) [Claims] A first coating step of applying a sealing resin by printing to a surface of the semiconductor substrate on which the posts are formed, on a surface on which the posts are formed; a back surface polishing step of polishing a back surface of the semiconductor substrate; The encapsulation resin is printed on the back surface of the semiconductor substrate
A second coating step of coating the semiconductor substrate together with the sealing resin and a separating step of separating the semiconductor substrate into individual electronic components. 2. The method for manufacturing an electronic component according to claim 1, further comprising a curing step of curing the sealing resin applied in the first application step. 3. The method of manufacturing an electronic component according to claim 1, further comprising a surface polishing step of polishing a surface on which the sealing resin is applied before the back surface polishing step. 4. The method for manufacturing an electronic component according to claim 1, further comprising a curing step of curing the sealing resin applied in the second application step. 5. The method of manufacturing an electronic component according to claim 1, further comprising a connecting ball forming step of forming a connecting ball on the post before the separating step. . 6. The connection ball forming step according to claim 5, further comprising: a step of printing a solder paste on the post; and a step of melting and cooling the printed solder paste. Manufacturing method of electronic components. 7. The thickness of the stencil for printing used in the second coating step, claims characterized in that it is set according to the cure shrinkage of the sealing resin used in the first coating step
A method for manufacturing an electronic component according to claim 1 .