JP3079308B2 - Magneto-optical recording medium - Google Patents

Magneto-optical recording medium

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Publication number
JP3079308B2
JP3079308B2 JP08243678A JP24367896A JP3079308B2 JP 3079308 B2 JP3079308 B2 JP 3079308B2 JP 08243678 A JP08243678 A JP 08243678A JP 24367896 A JP24367896 A JP 24367896A JP 3079308 B2 JP3079308 B2 JP 3079308B2
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JP
Japan
Prior art keywords
recording medium
film
thin film
thickness
emu
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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JP08243678A
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Japanese (ja)
Other versions
JPH09115197A (en
Inventor
和彦 堤
達也 深見
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は磁界変調方式により
オーバライト (情報の重ね書き) ができる光磁気記録媒
体に関するものである。
The present invention relates to a magneto-optical recording medium capable of overwriting (overwriting information) by a magnetic field modulation method.

【0002】[0002]

【従来の技術】光磁気記録媒体 (以下記録媒体という)
に磁界変調方式によりオーバライトする方法が種々検討
されている。そして磁界変調方式によりオーバライトを
行う場合は、記録媒体に光強度が一定のレーザ光を投射
し、その投射位置に所定強度の変調磁界を与えることに
よって、記録媒体に既に書き込まれている情報を消去す
るとともに新たな情報を書き込むことができる。また、
このような磁界変調方式により光磁気記録を行った研究
結果は、例えば1987年11月24日に社団法人 電気学会が
発行した「電気学会研究会資料マグネティックス研究会
MAG-87-173-180」に発表されている。
2. Description of the Related Art Magneto-optical recording media (hereinafter referred to as recording media)
Various methods of overwriting by a magnetic field modulation method have been studied. When overwriting is performed by a magnetic field modulation method, a laser beam having a constant light intensity is projected onto a recording medium, and a modulation magnetic field having a predetermined intensity is applied to the projection position, so that information already written on the recording medium can be read. Erase and new information can be written. Also,
The results of research conducted on magneto-optical recording using such a magnetic field modulation method are described in, for example, “The Institute of Electrical Engineers of Japan, Magnetics Research Group” published by the Institute of Electrical Engineers of Japan on November 24, 1987.
MAG-87-173-180 ".

【0003】一方、低バイアス磁界による磁界変調方式
に適し、オーバライト(重ね書き)を可能とした光磁気
記録素子が特開平1−199342号公報に示されている。こ
の光磁気記録素子は垂直磁化膜が希土類金属成分として
少なくともGd元素及び遷移金属成分としてFe元素を含有
し、且つFe副格子磁化優勢であり、基板上に有する誘電
体層が非晶質窒化シリコンから成り、更に前記光磁気記
録素子はその垂直磁化膜の磁化MS が20emu/cc≦MS
70emu/ccに且つ該磁化MS と保磁力HC の積が100emu・
kOe/cc≦MS ・HC ≦500emu・kOe/ccの範囲内となるよ
うに設定されている。
On the other hand, a magneto-optical recording element suitable for a magnetic field modulation method using a low bias magnetic field and capable of overwriting (overwriting) is disclosed in JP-A-1-199342. In this magneto-optical recording element, the perpendicular magnetization film contains at least a Gd element as a rare earth metal component and an Fe element as a transition metal component, and has a predominant Fe sublattice magnetization, and the dielectric layer on the substrate is made of amorphous silicon nitride. Wherein the magnetization M S of the perpendicular magnetization film of the magneto-optical recording element is 20 emu / cc ≦ M S
70 emu / cc and the product of the magnetization M S and the coercive force H C is 100 emu
It is set so that kOe / cc ≦ M S · H C ≦ 500 emu · kOe / cc.

【0004】[0004]

【発明が解決しようとする課題】ところで、前述した記
録媒体に情報を高密度に書き込むためには変調磁界を与
える磁気ヘッドの変調周波数を高くする必要がある。ま
た、それとは別に磁気ヘッドと記録媒体との距離を、記
録媒体の反り及び厚さのバラツキ等を考慮して長くする
必要がある。
By the way, in order to write information on a recording medium at a high density, it is necessary to increase the modulation frequency of a magnetic head that applies a modulation magnetic field. In addition, it is necessary to increase the distance between the magnetic head and the recording medium in consideration of the warpage of the recording medium and the thickness variation.

【0005】しかし乍ら、変調周波数を高くすると磁気
ヘッドから発生する磁界の強度が低下する。また記録媒
体が高速回転していることにより、記録媒体に与えられ
る変調磁界の強度が磁気ヘッドの変調磁界の強度に追従
せず、記録媒体に与えられる変調磁界の強度が低下す
る。また磁気ヘッドと記録媒体との距離を長くしたこと
によっても記録媒体に与えられる変調磁界の強度が低下
するという問題がある。
However, when the modulation frequency is increased, the intensity of the magnetic field generated from the magnetic head decreases. In addition, since the recording medium rotates at a high speed, the intensity of the modulation magnetic field applied to the recording medium does not follow the intensity of the modulation magnetic field of the magnetic head, and the intensity of the modulation magnetic field applied to the recording medium decreases. There is also a problem that the intensity of the modulation magnetic field applied to the recording medium is reduced even when the distance between the magnetic head and the recording medium is increased.

【0006】そのため、記録媒体に情報を十分な記録状
態で記録するためには磁気ヘッドの変調磁界の強度を20
0 Oe以上にする必要がある。これは記録媒体自体から発
生している浮遊磁界が磁気ヘッドから与えられる変調磁
界に反発するためであると考えられている。
Therefore, in order to record information on a recording medium in a sufficient recording state, the intensity of the modulation magnetic field of the magnetic head must be reduced to 20.
Must be 0 Oe or more. It is thought that this is because the floating magnetic field generated from the recording medium itself repels the modulation magnetic field given from the magnetic head.

【0007】一方、それとは別の特開平1−199342号公
報に示されている光磁気記録素子は、垂直磁化膜が希土
類金属成分として少なくともGd元素及び遷移金属成分と
してFe元素を含有しており、垂直磁化膜の磁化MS が20
emu/cc≦MS ≦70emu/ccに且つ磁化MS と保磁力HC
積が100emu・kOe/cc≦MS ・HC ≦500emu・kOe/ccの範
囲内となるように設定されているので、磁界変調方式に
適した補償温度記録方式によオーバライトできる光磁気
記録素子を提供できるが、磁界変調方式に適したキュリ
ー点記録方式によって、小さい磁化でオーバライトでき
る光磁気記録媒体を提供できないという問題がある。
On the other hand, in a magneto-optical recording element disclosed in Japanese Patent Application Laid-Open No. 1-199342, the perpendicular magnetization film contains at least a Gd element as a rare earth metal component and an Fe element as a transition metal component. , The magnetization M S of the perpendicular magnetization film is 20
emu / cc ≦ M S ≦ 70 emu / cc and the product of the magnetization M S and the coercive force H C is set so as to be within a range of 100 emu · kOe / cc ≦ M S · H C ≦ 500 emu · kOe / cc. Therefore, it is possible to provide a magneto-optical recording element that can be overwritten by a compensation temperature recording method suitable for a magnetic field modulation method, but a magneto-optical recording medium that can be overwritten with a small magnetization by a Curie point recording method suitable for a magnetic field modulation method. There is a problem that it cannot be provided.

【0008】本発明は斯かる問題に鑑み、記録媒体の変
調磁界の強度が200 Oe以下であってもキュリー点記録方
式により記録媒体に情報を十分な記録状態にして記録し
得る記録媒体を提供することを目的とする。
In view of the above problem, the present invention provides a recording medium capable of recording information in a sufficient recording state on the recording medium by the Curie point recording method even when the intensity of the modulation magnetic field of the recording medium is 200 Oe or less. The purpose is to do.

【0009】[0009]

【課題を解決するための手段】本発明に係る光磁気記録
媒体は、基板に、垂直な磁気異方性を有する磁性薄膜を
形成し、これに重ねて誘電体よりなる保護膜を形成して
なり、磁界変調方式の装置に用いられ、オーバライト可
能とした光磁気記録媒体において、前記磁性薄膜がT
b,Fe,Coを主成分とした磁性薄膜であり、その膜
厚をtμm 、その飽和磁化をMs emu/ccとした場合にt
×Ms <5μm ・emu/cc(但し、t=0.04μm かつ、 (1)Tb18.0(Fe0.89 Co0.11)82.0 (2)Tb19.5(Fe0.89 Co0.11)80.5 (3)Tb21.0(Fe0.89 Co0.11)79.0 (4)Tb22.5(Fe0.89 Co0.11)77.5 (5)Tb24.0(Fe0.89 Co0.11)76.0 の原子比で表記された5種類の組成を 除く)を満足する
磁性薄膜を備えていることを特徴とする。記録媒体の浮
遊磁界の強度は、記録媒体の磁性薄膜の膜厚tμm とそ
の飽和磁化Ms emu/ccとの乗算値に比例する。磁性薄膜
の膜厚t×飽和磁化Ms 5μm・emu/ccを満足する
と、記録媒体の変調磁界の強度を200 Oeにして情報を記
録した場合、搬送波対雑音比 C/Nが45dB以上、ジッター
σが4nsec以下になる。これにより情報を十分な記録状
態で記録するのに、変調磁界の強度を大きくせずにす
む。
According to the magneto-optical recording medium of the present invention, a magnetic thin film having perpendicular magnetic anisotropy is formed on a substrate, and a protective film made of a dielectric is formed on the magnetic thin film. In a magneto-optical recording medium which is used in a magnetic field modulation type apparatus and is capable of overwriting, the magnetic thin film
b, Fe, a magnetic thin film whose main component is Co, the thickness Timyuemu, the saturation magnetization in the case of the M s emu / cc t
× M s <5 μm · emu / cc (where t = 0.04 μm and (1) Tb18.0 (Fe0.89 Co0.11) 82.0 (2) Tb19.5 (Fe0.89 Co0.11) 80.5 (3 ) Tb21.0 (Fe0.89 Co0.11) 79.0 ( 4) Tb22.5 (Fe0.89 Co0.11) was expressed in 77.5 (5) Tb24.0 (Fe0.89 Co0.11 ) 76.0 atomic ratio of ( Excluding five types of compositions ) . The strength of the stray field of the record medium is proportional to the multiplication value of the film thickness tμm magnetic thin film of the recording medium and its saturation magnetization M s emu / cc. When the thickness of the magnetic thin film t × saturation magnetization M s 5 μm · emu / cc is satisfied, when the information is recorded with the intensity of the modulation magnetic field of the recording medium set to 200 Oe, the carrier / noise ratio C / N is 45 dB or more. Jitter σ becomes 4 nsec or less. As a result, the intensity of the modulation magnetic field does not need to be increased to record information in a sufficient recording state.

【0010】[0010]

【発明の実施の形態】以下本発明を発明の実施の形態を
示す図面によって詳述する。図1はジッターσと搬送波
対雑音比C/N との関係を、図2は搬送波対雑音比C/N と
膜厚t×飽和磁化MS との関係を示すグラフである。さ
て、本発明の実施の形態を説明するに先立って発明の原
理を説明する。本願発明者は記録媒体に情報を十分な記
録状態で記録するために、記録媒体の変調磁界の強度を
200 Oe以上にして、記録媒体自体から発生する浮遊磁界
の影響の有無について実験により確かめた。そして記録
媒体の浮遊磁界は、記録媒体における情報記録膜、つま
り磁性薄膜の膜厚tと、その飽和磁化MS との積に比例
することを確認した。そして、記録媒体を用いて情報を
記録して記録信号と再生信号との時間的ズレを示すジッ
ターσと搬送波対雑音比 C/Nとの関係を求めたところ図
1に示す如き結果が得られた。図1は縦軸をジッターσ
とし、横軸を搬送波対雑音比 C/Nとして示している。こ
の図1から明らかなようにジッターσが 3.5nsec以上に
なると搬送波対雑音比C/N が45dB以下になり十分な記録
状態で情報を記録できないことになる。一方、記録媒体
の変調磁界の強度を200 Oeにして、搬送波対雑音比 C/N
に対し膜厚tと飽和磁化MS との乗算値の関係を求めた
ところ、図2に示す如き結果が得られた。図2は縦軸を
搬送波対雑音比 C/Nとし、横軸を膜厚tと飽和磁化MS
との乗算値として示している。この図2から明らかなよ
うに、膜厚t×飽和磁化MS の乗算値が低下するにとも
ない搬送波対雑音比 C/Nが上昇し、両者の関係を示す曲
線は下側に僅かに弯曲して右下りの弧状に示される。そ
して膜厚tと飽和磁化MS との乗算値が5μm ・emu/cc
以下になると搬送波対雑音比 C/Nが45dB以上を保持する
ことになる。これに対し5μm ・emu/cc以上では搬送波
対雑音比 C/Nが45dB以下に低下して前述したように十分
な記録状態で情報を記録できないことになる。換言すれ
ば記録媒体に情報を十分な記録状態で記録するために
は、記録媒体の磁性薄膜の膜厚tと飽和磁化MS との乗
算値を5μm ・emu/cc以下にすべきことが判る。さて、
図3は本発明に係る記録媒体の模式的拡大断面図であ
る。ポリカーボネート基板又は2Pガラス基板からなる基
板1の一方の面には、SiN 膜からなり膜厚が0.06μm の
誘電体膜2が形成されており、この誘電体膜2上にはTb
FeCo膜からなり膜厚が0.08μm であって飽和磁化MS
60emu/ccとしている情報記録膜たる磁性薄膜3が形成さ
れている。そして磁性薄膜3上にはSiN 膜からなり膜厚
0.08μm の保護膜4が形成されている。これらの各薄膜
はいずれもスパッタリング法で形成されている。これに
より膜厚tμm と飽和磁化MS emu/ccとの乗算値は4.8
μm ・emu/ccとなっている。このように構成した試作記
録媒体に、記録信号周波数F=7.4MHz、記録媒体の回転
数N=3600r.p.m 、変調磁界の強度200 Oeとして情報を
記録して搬送波対雑音比 C/N及びジッターσを測定した
ところ表1の如き結果が得られた。磁性薄膜3の膜厚t
が0.08μm であり、飽和磁化MS が60emu/ccである試作
記録媒体S1では、搬送波対雑音比 C/Nが46.0dB、ジッタ
ーσが3.58nsecで得られた。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the drawings showing embodiments of the present invention. Figure 1 is the relationship between the jitter σ and carrier-to-noise ratio C / N, and FIG. 2 is a graph showing the relationship between the carrier-to-noise ratio C / N and the thickness t × saturation magnetization M S. Before describing the embodiments of the present invention, the principle of the present invention will be described. In order to record information on a recording medium in a sufficient recording state, the inventor of the present application increases the intensity of the modulation magnetic field of the recording medium.
At 200 Oe or more, the existence of the influence of the stray magnetic field generated from the recording medium itself was confirmed by an experiment. Then, it was confirmed that the stray magnetic field of the recording medium was proportional to the product of the thickness t of the information recording film in the recording medium, that is, the magnetic thin film, and the saturation magnetization M S thereof. Then, information was recorded using a recording medium, and the relationship between jitter σ indicating the time lag between the recording signal and the reproduction signal and the carrier-to-noise ratio C / N was obtained. The result shown in FIG. 1 was obtained. Was. In FIG. 1, the vertical axis represents the jitter σ.
The horizontal axis indicates the carrier-to-noise ratio C / N. As is apparent from FIG. 1, when the jitter σ is 3.5 nsec or more, the carrier-to-noise ratio C / N becomes 45 dB or less, and information cannot be recorded in a sufficient recording state. On the other hand, the intensity of the modulation magnetic field of the recording medium was set to 200 Oe, and the carrier-to-noise ratio C / N
When the relationship between the product of the film thickness t and the saturation magnetization M S was determined, the results shown in FIG. 2 were obtained. In FIG. 2, the vertical axis represents the carrier-to-noise ratio C / N, and the horizontal axis represents the film thickness t and the saturation magnetization M S.
Is shown as a multiplication value. As is clear from FIG. 2, the carrier-to-noise ratio C / N increases as the product of the film thickness t × the saturation magnetization M S decreases, and the curve showing the relationship between them slightly curves downward. It is shown in the shape of a downward right arc. The product of the film thickness t and the saturation magnetization M S is 5 μm · emu / cc.
Below this, the carrier-to-noise ratio C / N is maintained at 45 dB or more. On the other hand, at 5 μm · emu / cc or more, the carrier-to-noise ratio C / N drops to 45 dB or less, and information cannot be recorded in a sufficient recording state as described above. In other words, in order to record information on the recording medium in a sufficient recording state, it is understood that the product of the thickness t of the magnetic thin film of the recording medium and the saturation magnetization M S should be 5 μm · emu / cc or less. . Now,
FIG. 3 is a schematic enlarged sectional view of the recording medium according to the present invention. On one surface of a substrate 1 made of a polycarbonate substrate or a 2P glass substrate, a dielectric film 2 made of a SiN film and having a thickness of 0.06 μm is formed.
It is composed of a FeCo film, has a thickness of 0.08 μm, and has a saturation magnetization M S
A magnetic thin film 3 serving as an information recording film of 60 emu / cc is formed. The magnetic thin film 3 is made of a SiN film and has a thickness of
A protection film 4 of 0.08 μm is formed. Each of these thin films is formed by a sputtering method. As a result, the product of the film thickness tμm and the saturation magnetization M S emu / cc becomes 4.8.
μm ・ emu / cc. Information is recorded on the thus-produced prototype recording medium at a recording signal frequency F = 7.4 MHz, a recording medium rotation speed N = 3600 rpm, a modulation magnetic field intensity of 200 Oe, and a carrier-to-noise ratio C / N and jitter are recorded. When σ was measured, the results shown in Table 1 were obtained. Thickness t of magnetic thin film 3
Is 0.08 μm, and the prototype recording medium S1 having a saturation magnetization M S of 60 emu / cc has a carrier-to-noise ratio C / N of 46.0 dB and a jitter σ of 3.58 nsec.

【0011】[0011]

【表1】 [Table 1]

【0012】また磁性薄膜の膜厚tを0.10μm 、飽和磁
化MS を50emu/ccとしている試作記録媒体S2では搬送波
対雑音比 C/Nが45.0dB、ジッターσが3.80nsecで得ら
れ、更に磁性薄膜の膜厚tを0.08μm 、飽和磁化を30em
u/ccとした試作記録媒体S3では搬送波対雑音比 C/Nが4
8.0dB、ジッターσが3.50nsecで得られた。
In the prototype recording medium S2 in which the thickness t of the magnetic thin film is 0.10 μm and the saturation magnetization M S is 50 emu / cc, the carrier-to-noise ratio C / N is 45.0 dB and the jitter σ is 3.80 nsec. Thickness t of magnetic thin film is 0.08μm, saturation magnetization is 30em
The carrier-to-noise ratio C / N is 4 for the prototype recording medium S3 with u / cc
8.0dB and jitter σ were obtained in 3.50nsec.

【0013】一方、試作記録媒体S1,S2,S3と同様の組成
の磁性薄膜を形成し、膜厚tと飽和磁化MS との乗算値
が5μm ・emu/cc以上となっている従来の記録媒体SS1,
SS2を同様に測定した場合は表1に示しているようにい
ずれも搬送波対雑音比 C/Nが45dB以下に、またジッター
σが5.0nsec 以上で得られた。
On the other hand, a conventional recording medium in which a magnetic thin film having the same composition as the prototype recording media S1, S2, S3 is formed and the product of the film thickness t and the saturation magnetization M S is 5 μm · emu / cc or more. Medium SS1,
When SS2 was similarly measured, as shown in Table 1, the carrier-to-noise ratio C / N was 45 dB or less and the jitter σ was 5.0 nsec or more.

【0014】このように記録媒体の磁性薄膜の膜厚tと
飽和磁化MS との乗算値を5μm ・emu/cc以下にしたこ
とにより記録媒体の変調磁界の強度を200 Oeになして
も、搬送波対雑音比 C/Nが45.0dBで得られ、ジッターσ
も4nsec以下で得られて、エラーレートが小さく、高速
回転させて小さい変調磁界強度でオーバライトが可能な
記録媒体を得ることができる。
By setting the multiplication value of the thickness t of the magnetic thin film of the recording medium and the saturation magnetization M S to 5 μm · emu / cc or less, even if the intensity of the modulation magnetic field of the recording medium is 200 Oe, Carrier-to-noise ratio C / N of 45.0dB and jitter σ
Can be obtained in 4 nsec or less, and it is possible to obtain a recording medium having a low error rate and capable of overwriting with a small modulated magnetic field intensity by rotating at a high speed.

【0015】図4は本発明の他の実施の形態を示した記
録媒体の模式的拡大断面図である。ポリカードネート基
板又は2Pガラス板からなる基板1の一方の面には、SiN
膜からなり膜厚tが0.06μm の誘電体膜2が形成されて
おり、この誘電体膜2上には例えばTbFeCo膜からなり、
膜厚tが0.03μm であって飽和磁化MS を100 emu/ccと
している磁性薄膜3が形成されている。そして磁性薄膜
3上にはAlNi膜からなり、膜厚が0.04μm である反射膜
5が形成されている。更に反射膜5上にはSiN膜からな
り膜厚tが0.08μm の保護膜4が形成されている。な
お、前記磁性薄膜3にはDyFeCo、GdTbFe又はGdTbFeCoあ
るいはBiYIG 、BiDy-Garnet の膜を用いることができ
る。
FIG. 4 is a schematic enlarged sectional view of a recording medium showing another embodiment of the present invention. On one side of a substrate 1 made of a polycardate substrate or a 2P glass plate, SiN
A dielectric film 2 made of a film and having a thickness t of 0.06 μm is formed. On this dielectric film 2 is formed, for example, a TbFeCo film.
A magnetic thin film 3 having a thickness t of 0.03 μm and a saturation magnetization M S of 100 emu / cc is formed. On the magnetic thin film 3, a reflective film 5 made of an AlNi film and having a thickness of 0.04 μm is formed. Further, a protective film 4 made of a SiN film and having a thickness t of 0.08 μm is formed on the reflective film 5. The magnetic thin film 3 may be a film of DyFeCo, GdTbFe, GdTbFeCo, BiYIG, or BiDy-Garnet.

【0016】このように構成した記録媒体も前記記録媒
体S1, S2, S3と同様に記録媒体に情報を記録して搬送波
対雑音比 C/N及びジッターσを測定したところ表2に示
す如き結果が得られた。
With the recording medium thus configured, information was recorded on the recording medium in the same manner as the recording media S1, S2, and S3, and the carrier-to-noise ratio C / N and the jitter σ were measured. was gotten.

【0017】[0017]

【表2】 [Table 2]

【0018】この表2から明らかなように磁性薄膜3を
TbFeCoで形成し、その膜厚tを前述した記録媒体S1, S
2, S3の膜厚tの略1/3 の0.03μm にした場合も膜厚t
と飽和磁化MS との乗算値を5μm ・emu/cc以下にする
と、そのうよにした試作記録媒体S4,S5,S6では搬送波対
雑音比 C/Nが45dB以上、またジッターσが4.0nsec 以下
で得られる。そしてこの記録媒体S4, S4と同様の組成で
磁性薄膜3を形成し、膜厚tと飽和磁化MS との乗算値
が6μm ・emu/ccである従来の記録媒体SS3 では搬送波
対雑音比C/N が44.2dBに、ジッターσが4.4nsec になっ
た。このように磁性薄膜3が薄い場合でも膜厚tと飽和
磁化MS との乗算値を5μm ・emu/cc以下にすることに
よってエラーレートが小さく、高速回転させて小さい変
調磁界強度でオーバライトが可能な記録媒体を得ること
ができる。図5は本発明の更に他の実施の形態を示す記
録媒体の模式的拡大断面図である。前記同様の基板1の
一方の面にはSiN 膜からなり膜厚tが0.06μm の第1の
誘電体膜2Aが形成されており、この誘電体膜2A上には例
えばTbFeCo膜であって膜厚tが0.03μm であり飽和磁化
S が50emu/ccの磁性薄膜3を形成している。そして磁
性薄膜3上にはSiN 膜からなり膜厚tが0.06μm の第2
の誘電体膜2Bが形成されており、その誘電体膜2B上には
AlNi膜からなり膜厚tが0.04μm の反射膜5を形成して
いる。更に反射膜5上にはSiN 膜からなり膜厚tが0.08
μm の保護膜4が形成されている。このように構成した
記録媒体を前記同様にして情報を記録して搬送波対雑音
比C/N及びジッターσを測定したところ表3に示す結果
を得た。
As apparent from Table 2, the magnetic thin film 3
The recording medium S1, S
2, Even when the thickness is set to 0.03 μm, which is approximately 1/3 of the thickness t of S3,
And the saturation magnetization M to a multiplication value of the S below 5 [mu] m · emu / cc, the trial recording medium S4, was Uyo, S5, S6 in carrier-to-noise ratio C / N is 45dB or more and the jitter σ is 4.0nsec Obtained below. Then, the magnetic thin film 3 is formed with the same composition as the recording media S4, S4, and the carrier-to-noise ratio C is set in the conventional recording medium SS3 in which the multiplication value of the film thickness t and the saturation magnetization M S is 6 μm · emu / cc. / N was 44.2 dB and jitter σ was 4.4 nsec. Thus, even when the magnetic thin film 3 is thin, the error rate is small by making the multiplication value of the film thickness t and the saturation magnetization M S equal to or less than 5 μm · emu / cc. A possible recording medium can be obtained. FIG. 5 is a schematic enlarged sectional view of a recording medium showing still another embodiment of the present invention. A first dielectric film 2A made of a SiN film and having a thickness t of 0.06 μm is formed on one surface of the same substrate 1 as above, and a TbFeCo film such as a TbFeCo film is formed on the dielectric film 2A. A magnetic thin film 3 having a thickness t of 0.03 μm and a saturation magnetization M S of 50 emu / cc is formed. On the magnetic thin film 3 is formed a second SiN film having a thickness t of 0.06 μm.
Dielectric film 2B is formed on the dielectric film 2B.
A reflection film 5 made of an AlNi film and having a thickness t of 0.04 μm is formed. Further, the reflective film 5 is made of a SiN film and has a thickness t of 0.08.
A μm protective film 4 is formed. Information was recorded on the recording medium thus configured in the same manner as described above, and the carrier-to-noise ratio C / N and jitter σ were measured. The results shown in Table 3 were obtained.

【0019】[0019]

【表3】 [Table 3]

【0020】この表3から明らかなように磁性薄膜3が
0.03又は0.04μm と薄く、磁性薄膜3と反射膜5との間
に誘電体膜2Bを介在させている記録媒体であっても、磁
性薄膜3の膜厚tと飽和磁化MS との乗算値を5μm ・
emu/cc以下にしている試作記録媒体S6, S7, S8は、いず
れも搬送波対雑音比 C/Nが45dB以上、ジッターσが4.0n
sec で得られる。これに対し膜厚tと飽和磁化MS との
乗算値が6.4μm ・emu/ccである従来の記録媒体SS4 で
は搬送波対雑音比C/N が45dB以下に、ジッターσが4ns
ec以上になる。このように磁性薄膜3と反射膜5との間
に誘電体膜2Bを形成している記録媒体においても、エラ
ーレートが小さく、高速回転させて小さい変調磁界強度
でオーバライトできる記録媒体を得ることができる。な
お、磁性薄膜3と反射膜5との間に誘電体膜2Bを形成し
ている記録媒体はカー回転角θk が大きくなる。
As apparent from Table 3, the magnetic thin film 3
Even in a recording medium that is as thin as 0.03 or 0.04 μm and has a dielectric film 2B interposed between the magnetic thin film 3 and the reflective film 5, the multiplication value of the thickness t of the magnetic thin film 3 and the saturation magnetization M S To 5 μm
The prototype recording media S6, S7, and S8 having an emu / cc or less have a carrier-to-noise ratio C / N of 45 dB or more and a jitter σ of 4.0 n.
Obtained in seconds. On the other hand, in the conventional recording medium SS4 in which the product of the film thickness t and the saturation magnetization M S is 6.4 μm · emu / cc, the carrier-to-noise ratio C / N is 45 dB or less and the jitter σ is 4 ns.
more than ec. As described above, even in the recording medium in which the dielectric film 2B is formed between the magnetic thin film 3 and the reflection film 5, a recording medium having a low error rate and capable of being rotated at high speed and overwritten with a small modulation magnetic field intensity is obtained. Can be. The recording medium in which the dielectric film 2B is formed between the magnetic thin film 3 and the reflection film 5 has a large Kerr rotation angle θk.

【0021】[0021]

【発明の効果】以上詳述したように本発明に係る光磁気
記録媒体は、変調磁界の強度を200 Oeにして情報を記録
した場合、その情報の搬送波対雑音比 C/Nを45dB以上、
ジッターσを4nsec以下になし得、そのためエラーレー
トが小さく、高速回転させて小さい変調磁界強度でキュ
リー点記録方式によってオーバライトが可能な光磁気記
録媒体を提供できる優れた効果を奏する。
Magneto-optical recording medium according to the present invention as described in detail above, according to the present invention, when by the intensity of the modulated magnetic field to 200 Oe was recorded information, the carrier-to-noise ratio C / N of the information 45dB or more,
Give no jitter σ below 4 nsec, therefore the error rate is small, an excellent effect capable of providing a magneto-optical recording medium capable of overwriting by Curie point recording method with a small modulated magnetic field intensity at a high speed.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 ジッター及び搬送波対雑音比の関係を示すグ
ラフである。
FIG. 1 is a graph showing the relationship between jitter and carrier to noise ratio.

【図2】 搬送波対雑音比及び磁性薄膜の膜厚と飽和磁
化との乗算値との関係を示すグラフである。
FIG. 2 is a graph showing a relationship between a carrier-to-noise ratio and a product of a thickness of a magnetic thin film and a saturation magnetization.

【図3】 本発明の光磁気記録媒体の実施の形態を示す
模式的拡大断面図である。
FIG. 3 is a schematic enlarged sectional view showing an embodiment of the magneto-optical recording medium of the present invention.

【図4】 本発明の他の実施の形態を示す光磁気記録媒
体の模式的拡大断面図である。
FIG. 4 is a schematic enlarged cross-sectional view of a magneto-optical recording medium showing another embodiment of the present invention.

【図5】 本発明の他の実施の形態を示す光磁気記録媒
体の模式的拡大断面図である。
FIG. 5 is a schematic enlarged sectional view of a magneto-optical recording medium showing another embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1 基板、2,2A, 2B 誘電体膜、3 磁性薄膜、4
保護膜、5 反射膜。
1 substrate, 2, 2A, 2B dielectric film, 3 magnetic thin film, 4
Protective film, 5 reflective film.

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 基板に、垂直な磁気異方性を有する磁性
薄膜を形成し、これに重ねて誘電体よりなる保護膜を形
成してなり、磁界変調方式の装置に用いられ、オーバラ
イト可能とした光磁気記録媒体において、前記磁性薄膜
がTb,Fe,Coを主成分とした磁性薄膜であり、そ
の膜厚をtμm 、その飽和磁化をMsemu/ccとした場合
に t×Ms <5μm・emu/cc (但し、t=0.04μm かつ、 (1)Tb18.0(Fe0.89 Co0.11)82.0 (2)Tb19.5(Fe0.89 Co0.11)80.5 (3)Tb21.0(Fe0.89 Co0.11)79.0 (4)Tb22.5(Fe0.89 Co0.11)77.5 (5)Tb24.0(Fe0.89 Co0.11)76.0 の原子比で表記された5種類の組成を 除く)を満足する
磁性薄膜を備えていることを特徴とする光磁気記録媒
1. A magnetic thin film having perpendicular magnetic anisotropy is formed on a substrate, and a protective film made of a dielectric is formed on the magnetic thin film. in magneto-optical recording medium with said magnetic thin film is Tb, Fe, a magnetic thin film whose main component is Co, Timyuemu its thickness, its saturation magnetization M s emu / cc and the case t × M s <5 μm · emu / cc (however , t = 0.04 μm and (1) Tb18.0 (Fe0.89 Co0.11) 82.0 (2) Tb19.5 (Fe0.89 Co0.11) 80.5 (3) Tb21. 0 (Fe0.89 Co0.11) 79.0 (4) Tb22.5 (Fe0.89 Co0.11) 77.5 (5) Five kinds of Tb24.0 (Fe0.89 Co0.11) 76.0 A magneto-optical recording medium characterized by comprising a magnetic thin film satisfying (excluding composition ) .
JP08243678A 1996-09-13 1996-09-13 Magneto-optical recording medium Expired - Lifetime JP3079308B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP08243678A JP3079308B2 (en) 1996-09-13 1996-09-13 Magneto-optical recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP08243678A JP3079308B2 (en) 1996-09-13 1996-09-13 Magneto-optical recording medium

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP1032116A Division JP2660569B2 (en) 1989-02-10 1989-02-10 Magneto-optical recording medium

Publications (2)

Publication Number Publication Date
JPH09115197A JPH09115197A (en) 1997-05-02
JP3079308B2 true JP3079308B2 (en) 2000-08-21

Family

ID=17107368

Family Applications (1)

Application Number Title Priority Date Filing Date
JP08243678A Expired - Lifetime JP3079308B2 (en) 1996-09-13 1996-09-13 Magneto-optical recording medium

Country Status (1)

Country Link
JP (1) JP3079308B2 (en)

Also Published As

Publication number Publication date
JPH09115197A (en) 1997-05-02

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