JP3034010B2 - Thin film manufacturing method - Google Patents
Thin film manufacturing methodInfo
- Publication number
- JP3034010B2 JP3034010B2 JP2286451A JP28645190A JP3034010B2 JP 3034010 B2 JP3034010 B2 JP 3034010B2 JP 2286451 A JP2286451 A JP 2286451A JP 28645190 A JP28645190 A JP 28645190A JP 3034010 B2 JP3034010 B2 JP 3034010B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film
- substrate
- organic material
- support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は薄膜（例えば光電変換膜）の製造方法に関す
るものである。The present invention relates to a method for producing a thin film (for example, a photoelectric conversion film).
イメージ管などに用いられる光電変換膜は、従来は次
のように製造されてきた。まず、表面が平滑面となった
ガラス基板が用意され、この平滑面に有機材料を塗布し
て有機膜が形成される。次に、光電変換能を有する材料
（例えば金）を真空蒸着し、光電面としての薄膜を形成
する。しかる後、有機膜をガラス基板から引き剥すこと
で、光電変換膜としての二層膜が得られる。Conventionally, a photoelectric conversion film used for an image tube or the like has been manufactured as follows. First, a glass substrate having a smooth surface is prepared, and an organic material is applied to the smooth surface to form an organic film. Next, a material (for example, gold) having a photoelectric conversion ability is vacuum-deposited to form a thin film as a photoelectric surface. Thereafter, the organic film is peeled off from the glass substrate to obtain a two-layer film as a photoelectric conversion film.
しかし、上記の従来方法では、有機膜がガラス基板に
接触するため、その種類によっては引き剥しが非常に困
難となる。また、製造後に大気中などに放置しておく
と、せっかく作った光電面としての薄膜が潮解、酸化な
どにより変質し、あるいはホコリが付着して、光電変換
効率等の特性が劣化する。However, in the above-mentioned conventional method, the organic film comes into contact with the glass substrate, so that it is very difficult to peel off the organic film depending on the type. Also, if left in the air after manufacture, the thin film as the photocathode, which has been prepared, will be degraded by deliquescence, oxidation, etc., or dust will adhere, and characteristics such as photoelectric conversion efficiency will be degraded.
そこで本発明は、基板からの引き剥しが容易であっ
て、しかも光電面の変質等を招くことのない薄膜の製造
方法を提供することを目的とする。Therefore, an object of the present invention is to provide a method for producing a thin film that can be easily peeled off from a substrate and does not cause deterioration of the photoelectric surface or the like.
本発明に係る薄膜の製造方法は、基板の平滑面上に光
電変換特性を有する材料の薄膜を形成する第１工程と、
薄膜上に、基板と薄膜との間の接着力よりも大きな接着
力が薄膜との間で生じる有機材料の支持膜を形成する第
２工程と、第２工程に引き続いて、支持膜を薄膜と共に
基板から引き剥す工程とを備えることを特徴とする。特
に、第２工程は、基板を回転させ、液状の前記有機材料
を基板上に垂らし、これを電気炉にセットして焼結し、
この有機材料を硬化させることにより実行されることが
好ましい。The method for producing a thin film according to the present invention includes a first step of forming a thin film of a material having photoelectric conversion characteristics on a smooth surface of a substrate,
A second step of forming a support film of an organic material on the thin film where an adhesive force greater than the adhesive force between the substrate and the thin film is generated between the thin film and the second step; Peeling off from the substrate. In particular, in the second step, the substrate is rotated, the liquid organic material is dropped on the substrate, and this is set in an electric furnace and sintered.
It is preferably performed by curing the organic material.
本発明に係る薄膜の製造方法は、Cs Iからなる薄膜を
基板上に形成する工程と、薄膜上に有機材料からなる支
持膜を形成する工程と、支持膜を薄膜に接着させたまま
基板から分離する工程とを備えることとしてもよい。好
適には、支持膜は、ポリパラキシリレン又はポリイミド
からなる。The method for producing a thin film according to the present invention includes a step of forming a thin film made of CsI on a substrate, a step of forming a support film made of an organic material on the thin film, and a step of forming a support film adhered to the thin film from the substrate. And a step of separating. Preferably, the support membrane is made of polyparaxylylene or polyimide.
本発明によれば、支持膜と薄膜の間の接着力は、薄膜
と基板の間の接着力よりも大きくなっているので、基板
から支持膜を薄膜と共に容易に引き剥すことができる。
また、引き剥すまで薄膜は支持膜と基板に挟まれている
ので、保存中劣化することもない。According to the present invention, since the adhesive force between the support film and the thin film is larger than the adhesive force between the thin film and the substrate, the support film and the thin film can be easily peeled off from the substrate.
Further, since the thin film is sandwiched between the supporting film and the substrate until the thin film is peeled, the thin film does not deteriorate during storage.
以下、添付図面を参照して本発明の実施例を説明す
る。Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.
第１図は実施例の製造工程を示す工程別の断面図であ
る。まず、一面が平滑面となったガラス基板１を用意
し、ここに光電変換材料の薄膜２を形成する（同図
（ａ）図示）。この薄膜２は、例えば紫外線や軟Ｘ線に
感度を有する金（Au）を真空蒸着することで形成できる
が、銀（Ag）、ニッケル（Ni）の他、潮解性のあるヨウ
化セシウム（Cs I）等であってもよい。但し、Cs Iは絶
縁物なので、その上に金（Au）などを数十〜百Å蒸着
し、これを電子伝導膜とし、これらを薄膜２とする必要
がある。FIG. 1 is a cross-sectional view showing a manufacturing process of an embodiment in each process. First, a glass substrate 1 having a smooth surface is prepared, and a thin film 2 of a photoelectric conversion material is formed thereon (shown in FIG. 1A). This thin film 2 can be formed, for example, by vacuum-depositing gold (Au) having sensitivity to ultraviolet rays or soft X-rays. In addition to silver (Ag) and nickel (Ni), deliquescent cesium iodide (Cs) can be used. I) and the like. However, since CsI is an insulator, it is necessary to deposit gold (Au) or the like on it for several tens to hundreds of millimeters to form an electron conductive film, which is used as the thin film 2.
次に、薄膜２の上面に有機材料からなる支持膜３を形
成する（同図（ｂ）図示）。この有機材料としては、例
えばポリイミドやパリレン（ポリパラキシリレン）を用
い得るが、例えばポリイミドの支持膜３は次のように形
成される。すなわち、Auの薄膜２を形成してあるガラス
基板１を、毎分1000〜2000回転のスピードで回転させ、
中央部に液状ポリイミドを垂らしてスピンコートする。
次いで、これを電気炉にセットし、200℃程度で焼結す
ると、硬化された支持膜３が得られる。Next, a support film 3 made of an organic material is formed on the upper surface of the thin film 2 (shown in FIG. 1B). As the organic material, for example, polyimide or parylene (polyparaxylylene) can be used. For example, the polyimide support film 3 is formed as follows. That is, the glass substrate 1 on which the Au thin film 2 is formed is rotated at a speed of 1000 to 2000 rotations per minute,
Liquid polyimide is dripped at the center and spin-coated.
Next, this is set in an electric furnace and sintered at about 200 ° C. to obtain a cured support film 3.
以上の工程によって得られた光電変換膜は、ガラス基
板１から引き剥されて使用される。すなわち、ガラス基
板１上で必要なサイズおよび形状に切断され、ピンセッ
トなどで端から剥して使用される（同図（ｃ）図示）。
このとき、ガラス基板１と薄膜２の間の接着力は、薄膜
２と支持膜３の間の接着力より小さいので、容易に引き
剥し得る。また、引き剥すまでは薄膜２は外気に触れな
いので、潮解や酸化が生じることがなく、汚れやホコリ
が付着することもない。The photoelectric conversion film obtained by the above steps is peeled off from the glass substrate 1 and used. That is, it is cut into the required size and shape on the glass substrate 1 and peeled off from the end with tweezers or the like and used (illustrated in FIG. 3C).
At this time, since the adhesive force between the glass substrate 1 and the thin film 2 is smaller than the adhesive force between the thin film 2 and the support film 3, it can be easily peeled off. Further, since the thin film 2 does not come into contact with the outside air until the thin film is peeled off, there is no deliquescence or oxidation, and no dirt or dust adheres.
上記実施例では、紫外線や軟Ｘ線用の光電変換膜とし
て、Au膜の例を中心に説明してきたが、光電変換膜以外
の薄膜（例えば光学フィルタ）の製造にも応用できる。
この場合には、薄膜２として波長選択性のある光吸収材
料が用いられ、支持膜３としてはこれに合致した有機材
料が用いられる。In the above embodiment, an Au film has been mainly described as a photoelectric conversion film for ultraviolet rays and soft X-rays. However, the present invention can be applied to the manufacture of a thin film (for example, an optical filter) other than the photoelectric conversion film.
In this case, a light-absorbing material having wavelength selectivity is used as the thin film 2, and an organic material conforming thereto is used as the support film 3.
以上、詳細に説明した通り本発明では、支持膜と薄膜
の間の接着力は、薄膜と基板の間の接着力よりも大きく
なっているので、基板から薄膜を容易に引き剥すことが
できる。また、引き剥すまで薄膜は支持膜と基板に挟ま
れているので、大気中等での保存によって劣化すること
もない。As described above in detail, in the present invention, since the adhesive force between the support film and the thin film is larger than the adhesive force between the thin film and the substrate, the thin film can be easily peeled from the substrate. Further, since the thin film is sandwiched between the support film and the substrate until the thin film is peeled, the thin film does not deteriorate due to storage in the air or the like.
第１図は本発明の実施例に係る薄膜の製造方法の工程別
断面図である。 １……ガラス基板、２……薄膜、３……支持膜。FIG. 1 is a sectional view of each step of a method for producing a thin film according to an embodiment of the present invention. 1 ... Glass substrate, 2 ... Thin film, 3 ... Support film.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平２−215530（ＪＰ，Ａ) 特開 平１−298302（ＪＰ，Ａ) 特開 昭59−76978（ＪＰ，Ａ) 特開 昭61−289302（ＪＰ，Ａ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01J 9/12,9/233 H01J 29/36 - 29/45 H01J 31/08 - 31/68 B29C 67/00 - 73/34 B29D 1/00 - 31/02 B32B 1/00 - 35/00 C08J 5/00 - 5/02 C08J 5/12 - 5/22 G02B 5/20 - 5/28 ──────────────────────────────────────────────────続 き Continued from the front page (56) References JP-A-2-215530 (JP, A) JP-A-1-298302 (JP, A) JP-A-59-76978 (JP, A) JP-A-61- 289302 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) H01J 9 / 12,9 / 233 H01J 29/36-29/45 H01J 31/08-31/68 B29C 67/00 -73/34 B29D 1/00-31/02 B32B 1/00-35/00 C08J 5/00-5/02 C08J 5/12-5/22 G02B 5/20-5/28
Claims (4)
料の薄膜を形成する第１工程と、前記薄膜上に、前記基
板と前記薄膜との間の接着力よりも大きな接着力が前記
薄膜との間で生じる有機材料の支持膜を形成する第２工
程と、前記第２工程に引き続いて、前記支持膜を前記薄
膜と共に前記基板から引き剥す工程とを備えることを特
徴とする薄膜の製造方法。A first step of forming a thin film of a material having photoelectric conversion characteristics on a smooth surface of a substrate; and an adhesive force larger than an adhesive force between the substrate and the thin film on the thin film. A second step of forming a support film of an organic material formed between the thin film and the thin film; and, subsequent to the second step, a step of peeling the support film together with the thin film from the substrate. Production method.
状の前記有機材料を前記基板上に垂らし、これを電気炉
にセットして焼結し、前記有機材料を硬化させることに
より実行されることを特徴とする請求項１記載の薄膜の
製造方法。2. The second step is performed by rotating the substrate, dropping the liquid organic material on the substrate, setting the liquid in an electric furnace, sintering the organic material, and curing the organic material. The method for producing a thin film according to claim 1, wherein:
と、前記薄膜上に有機材料からなる支持膜を形成する工
程と、前記支持膜を前記薄膜に接着させたまま前記基板
から分離する工程とを備えることを特徴とする薄膜の製
造方法。3. A step of forming a thin film made of Cs I on a substrate, a step of forming a support film made of an organic material on the thin film, and separating the support film from the substrate while keeping the support film adhered to the thin film. A method of manufacturing a thin film.
リイミドからなることを特徴とする請求項３記載の薄膜
の製造方法。4. The method according to claim 3, wherein said support film is made of polyparaxylylene or polyimide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2286451A JP3034010B2 (en) | 1990-10-24 | 1990-10-24 | Thin film manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2286451A JP3034010B2 (en) | 1990-10-24 | 1990-10-24 | Thin film manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04162327A JPH04162327A (en) | 1992-06-05 |
| JP3034010B2 true JP3034010B2 (en) | 2000-04-17 |
Family
ID=17704559
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2286451A Expired - Fee Related JP3034010B2 (en) | 1990-10-24 | 1990-10-24 | Thin film manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3034010B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004079396A1 (en) * | 2003-03-07 | 2004-09-16 | Hamamatsu Photonics K.K. | Scintillator panel and method of manufacturing radiation image sensor |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4941924B2 (en) * | 2006-07-18 | 2012-05-30 | 裕雄 長谷部 | Ion beam generation method |
-
1990
- 1990-10-24 JP JP2286451A patent/JP3034010B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004079396A1 (en) * | 2003-03-07 | 2004-09-16 | Hamamatsu Photonics K.K. | Scintillator panel and method of manufacturing radiation image sensor |
| US7618511B2 (en) | 2003-03-07 | 2009-11-17 | Hamamatsu Photonics K.K. | Scintillator panel and method of manufacturing radiation image sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04162327A (en) | 1992-06-05 |
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