JP3023994B2 - Semiconductor device and manufacturing method thereof - Google Patents

Description

Description: TECHNICAL FIELD The present invention relates to a semiconductor device in which a semiconductor element is bonded to a support member such as a lead frame using a die bonding material and sealed with a resin, and a method of manufacturing the semiconductor device.

BACKGROUND ART Conventionally, as a method of bonding a semiconductor element to a lead frame, a method of supplying a die bonding material onto the lead frame and bonding the semiconductor element has been used.

As these materials, for example, Au-Si eutectic, solder, resin paste and the like are known. Among them, Au-Si eutectic has a problem that it is expensive and has a high elastic modulus, and it is necessary to vibrate the bonded portion. There is a problem that solder cannot withstand a temperature higher than the melting point temperature and has a high elastic modulus.

Silver paste is the most common type of resin paste.Since silver paste is the cheapest, has high heat resistance, and has a low elastic modulus compared to other materials, it is most often used as an adhesive material for IC and LSI lead frames. ing.

The demand for high-density mounting by making electronic equipment smaller and thinner
In recent years, the number of semiconductor packages has increased rapidly,
Instead of the conventional pin insertion type, the surface mounting type suitable for high-density mounting has become mainstream.

This surface mount type package is mounted by heating the entire package by infrared reflow, vapor phase reflow, solder dip, or the like in order to directly solder the leads to a printed circuit board or the like.

At this time, since the entire package is exposed to a high temperature of 210 to 260 ° C., if moisture exists inside the package, explosive vaporization of the moisture causes a package crack (hereinafter referred to as a reflow crack).

The reflow crack significantly reduces the reliability of the semiconductor package, and is a serious problem and technical problem.

The mechanism by which the reflow crack occurs due to the die bonding material is as follows. While the semiconductor package is stored, (1) the die bonding material absorbs moisture, (2) the water is vaporized by heating at the time of reflow soldering, and (3) the vapor pressure destroys the die bonding layer. Peeling occurs, (4)
Reflow cracks occur.

While the reflow crack resistance of the encapsulant has been improved, reflow cracks caused by the die bonding material have become a serious problem, especially in thin packages, and improvement in reflow crack resistance has been strongly demanded. I have.

In the past, silver paste, which has been most commonly used, has become difficult to apply the silver paste uniformly over the entire application area due to the enlargement of the chip. Reflow cracks are liable to occur due to easy occurrence of cracks.

DISCLOSURE OF THE INVENTION The present invention provides a semiconductor device which uses a film-shaped organic die bonding material, does not generate reflow cracks, and has excellent reliability, and a method for manufacturing the same.

In the present invention, a film-like organic die bonding material is used. This is for example epoxy resin, silicone resin,
A film-like material mainly composed of an organic material such as an acrylic resin or a polyimide resin (including those obtained by adding a metal filler or an inorganic filler to an organic material). A film-like organic die bonding material is formed on a support member such as a lead frame. The pressure bonding is performed in a heated state, and the semiconductor element is further superimposed on the film-shaped organic die bonding material and then heated and pressed. That is, by forming a resin paste into a film, a die bonding material is to be uniformly applied to the bonded portion.

FIG. 1 shows an example of a manufacturing process of a semiconductor device of the present invention.

The film-shaped organic die-bonding material 1 is cut from a roll into a predetermined size by a cutter 2 (FIG. 1A). The film-shaped organic die-bonding material 1 is pressure-bonded to a die pad portion 6 of a lead frame 5 on a hot platen 7. It is crimped by the child 4 (FIG. 1B). Crimping conditions are temperature 100 ~ 250 ℃, time
Preferably, the pressure is 0.1 to 20 seconds and the pressure is 4 to 200 gf / mm ² .

The semiconductor element 8 is placed on the film-shaped organic die bonding material 1 stuck to the die pad portion 6 and subjected to heat compression bonding (die bonding) (FIG. 1C). The condition of die bonding is temperature 10
0 to 350 ° C., time 0.1 to 20 seconds, pressure 0.1 to 30 gf / mm ² are preferable, temperature 150 to 250 ° C., time 0.1 to more than 2 seconds, pressure 0.1
44 gf / mm ² is more preferable, and the temperature is most preferably 150 to 250 ° C., the time is 0.1 second or more and 1.5 seconds or less, and the pressure is 0.3-2 gf / mm ² .

Thereafter, a semiconductor device is manufactured through a wire bonding step (FIG. 1D) and a resin sealing step of the semiconductor element (FIG. 1E). 9 is a sealing resin.

For example, the film-shaped organic die bonding material of the present invention is a coating varnish obtained by dissolving and decomposing materials such as an organic material such as polyimide and epoxy resin and additives such as a metal filler as necessary in an organic solvent. A varnish for coating is applied to a carrier film such as a biaxially stretched polypropylene film, the solvent is volatilized, and the varnish is peeled off from the carrier film. In this way, a film having self-supporting properties can be obtained.

The present invention has found that there is a correlation between the occurrence of reflow cracks in a semiconductor device and the physical properties and characteristics of a film-like organic die bonding material, and has found the relationship between the occurrence of reflow cracks and the characteristics of a film-like organic die bonding material. This is the result of a detailed study.

The first invention of the present application is a semiconductor device in which a semiconductor element is bonded to a support member with a die bonding material, and the semiconductor element is sealed with a resin.
A semiconductor device using a film-shaped organic die bonding material of 5 vol% or less and a method for manufacturing the same.

According to a second aspect of the present invention, in a semiconductor device in which a semiconductor element is bonded to a supporting member with a die bonding material and the semiconductor element is sealed with a resin, the water absorption of the die bonding material is 1.0 vol.
% Or less of a film-shaped organic die bonding material.

The third invention of the present application is a semiconductor device in which a semiconductor element is bonded to a support member with a die bonding material, and the semiconductor element is sealed with a resin.
A semiconductor device using a film-shaped organic die bonding material of 0 wt% or less and a method for manufacturing the same.

According to a fourth aspect of the present invention, there is provided a semiconductor device in which a semiconductor element is bonded to a supporting member with a die bonding material and the semiconductor element is sealed with a resin. A semiconductor device using a die bonding material and a method for manufacturing the same.

The fifth invention of the present application is directed to a semiconductor device in which a semiconductor element is bonded to a support member with a die bonding material and the semiconductor element is sealed with a resin. A semiconductor device using a film-shaped organic die bonding material having a void volume ratio of 10% or less in a bonding material and at an interface between a die bonding material and a support member, and a method for manufacturing the same.

The sixth invention of the present application is directed to a semiconductor device in which a semiconductor element is bonded to a support member with a die bonding material and the semiconductor element is sealed with a resin. Peel strength is 0.5kgf / 5
A semiconductor device using a film-shaped organic die bonding material of × 5 mm chip or more, and a method for manufacturing the same.

According to a seventh aspect of the present invention, in a semiconductor device in which a semiconductor element is bonded to a supporting member with a die bonding material and the semiconductor element is sealed with a resin, the die bonding material has an area equal to or less than the area of the semiconductor element. When the semiconductor element is bonded to the support member, the die bonding material does not protrude from the region of the semiconductor element, that is, a film-shaped organic die bonding material that does not protrude from between the semiconductor element and the support member. And a method of manufacturing the same.

In these inventions, at the stage of attaching the film-shaped organic die bonding material to the support member, the water absorption is 1.5 vol.
% Or less, a film-like organic die-bonding material with a saturated moisture absorption of 1.0 vol% or less, a film-like organic die-bonding material with a residual volatile content of 3.0 wt% or less, and an elastic modulus at 250 ° C of 10 MPa or less. Are used.

A film organic die bonding material having a water absorption of 1.5 vol% or less used in the first invention, a film organic die bonding material having a saturated moisture absorption of 1.0 vol% or less used in the second invention, A film-like organic die bonding material having an elastic modulus at 250 ° C. of 10 MPa or less used in the invention and a peel strength of 0.5 kgf / 5 × 5 mm chip at the stage of bonding the semiconductor element used in the sixth invention to a supporting member. The above film-shaped organic die bonding material can be manufactured by adjusting the composition of the film-shaped organic die bonding, for example, the structure of a polymer such as polyimide or the content of a filler such as silver.

In addition, the residual volatile matter used in the third invention is 3.0 wt%.
At the stage where the film-shaped organic die bonding material and the semiconductor element used in the fifth invention are adhered to the support member, voids present in the die bonding material and on the active surfaces of the die bonding material and the support member have a void volume ratio of 10 % Or less can be produced by adjusting the production conditions of the film-like organic die bonding, such as the drying temperature and the drying time.

As the semiconductor element, a general semiconductor element such as an IC, an LSI, and a VLSI is used. The present invention is particularly suitably used for a semiconductor device having a size of 5 mm in length and 5 mm in width or more. As the supporting member, a lead frame having a die pad portion, a wiring board such as a ceramic wiring board, a glass-polyimide wiring board, or the like is used. FIG. 3 shows a plan view of an example of a lead frame having a die pad portion. The lead frame 40 shown in FIG.

As the film-like organic die bonding material, not only a single layer material but also a multi-layer one is used.

In the present invention, the film-like organic die bonding material can have two or more of the above-mentioned physical properties and characteristics.

Physical properties and characteristics that are preferably provided include, for example, (1) a relaxed moisture absorption of 1.0 vol% or less and a residual volatile matter of 3.0 w
(2) Film organic die having a saturated moisture absorption of 1.0 vol% or less and a peel strength of 0.5 kgf / 5 x 5 mm chip or more when the semiconductor element is bonded to the supporting member. (3) The residual volatile content is 3.0 wt% or less, and the peel strength at the stage when the semiconductor element is bonded to the supporting member is 0.5 kgf / 5 × 5 m.
Organic die bonding material in film form of m chips or more (4) Saturated moisture absorption rate is 1.0 vol% or less, residual volatile matter is 3.0 wt%
% Or less, and a peel strength of 0.5 kgf / 5 × 5 mm chip or more when the semiconductor element is bonded to the supporting member.

In the present invention, the above-mentioned physical properties and characteristics of the film-shaped organic die bonding material can be arbitrarily combined according to the purpose of use.

Further, the film-shaped organic die-bonding material of (1) to (4) or the film-shaped organic die-bonding material obtained by arbitrarily combining the above-described physical properties and characteristics has a semiconductor element having an area equal to or less than the area of the semiconductor element. It is preferable to use it as a film-like organic die bonding material that does not protrude from the size of the semiconductor element when it is adhered to the member.

ADVANTAGE OF THE INVENTION The semiconductor device of this invention can avoid generation | occurrence | production of a reflow crack at the time of the solder reflow of a semiconductor device mounting, and is excellent in reliability.

As an organic material of the film-like organic die bonding material of the present invention, a polyimide resin is preferable.

Examples of the tetracarboxylic dianhydride used as a raw material of the polyimide resin include 1,2- (ethylene) bis (trimellitate anhydride), 1,3- (trimethylene) bis (trimellitate anhydride), 1,4- (tetramer Methylene) bis (trimellitate anhydride), 1,5- (pentamethylene)
Bis (trimellitate anhydride), 1,6- (hexamethylene) bis (trimellitate anhydride), 1,7- (heptamethylene) bis (trimellitate anhydride), 1,8- (octamethylene) bis (trimellitate anhydride) ), 1,9-
(Nonamethylene) bis (trimellitate anhydride), 1,10
-(Decamethylene) bis (trimellitate anhydride), 1,
12- (dodecamethylene) bis (trimellitate anhydride), 1,16- (hexadecamethylene) bis (trimellitate anhydride), 1,18- (octadecamethylene) bis (trimellitate anhydride), pyromellitic dianhydride Thing, 3,
3 ', 4,4'-diphenyltetracarboxylic dianhydride, 2,
2 ', 3,3'-diphenyltetracarboxylic dianhydride, 2,2
-Bis (3,4-dicarboxyphenyl) propane dianhydride, 2,2-bis (2,3-dicarboxyphenyl) propane dianhydride, 1,1-bis (2,3-dicarboxyphenyl) ethane Dianhydride, 1,1-bis (3,4-dicarboxyphenyl) ethane dianhydride, bis (2,3-dicarboxyphenyl) methane dianhydride, bis (3,4-dicarboxyphenyl) methane dianhydride Anhydride, bis (3,4-dicarboxyphenyl) sulfone dianhydride, 3,4,9,10-perylenetetracarboxylic dianhydride, bis (3,4-dicarboxyphenyl)
Ether dianhydride, benzene-1,2,3,4-tetracarboxylic dianhydride, 3,4,3 ', 4'-benzophenonetetracarboxylic dianhydride, 2,3,2', 3-benzophenone Tetracarboxylic dianhydride, 2,3,3 ', 4'-benzophenonetetracarboxylic dianhydride, 1,2,5,6-naphthalenetetracarboxylic dianhydride, 2,3,6,7-naphthalene Tetracarboxylic dianhydride, 1,2,4,5-naphthalenetetracarboxylic dianhydride, 1,4,5,8-naphthalenetetracarboxylic dianhydride, 2,6-dichloronaphthalene-1,4, 5,8-tetracarboxylic dianhydride, 2,7-dichloronaphthalene-1,4,5,8
-Tetracarboxylic dianhydride, 2,3,6,7-tetrachloronaphthalene-1,4,5,8-tetracarboxylic dianhydride, phenanthrene-1,8,9,10-tetracarboxylic dianhydride object,
Pyrazine-2,3,5,6-tetracarboxylic dianhydride, thiophene-2,3,4,5-tetracarboxylic dianhydride, 2,3,
3 ', 4'-biphenyltetracarboxylic dianhydride, 3,4,
3 ', 4'-biphenyltetracarboxylic dianhydride, 2,3,
2 ', 3'-biphenyltetracarboxylic dianhydride, bis (3,4-dicarboxyphenyl) dimethylsilane dianhydride, bis (3,4-dicarboxyphenyl) methylphenylsilane dianhydride, bis (3 , 4-dicarboxyphenyl) diphenylsilane dianhydride, 1,4-bis (3,4-dicarboxyphenyldimethylsilyl) benzene dianhydride,
1,3-bis (3,4-dicarboxyphenyl) -1,1,3,3-
Tetramethyldicyclohexane dianhydride, p-phenylenebis (trimellitate anhydride), ethylenetetracarboxylic dianhydride, 1,2,3,4-butanetetracarboxylic dianhydride, decahydronaphthalene-1,4, 5,8-tetracarboxylic dianhydride, 4,8-dimethyl-1,2,3,5,6,7-hexahydronaphthalene-1,2,5,6-tetracarboxylic dianhydride, cyclopentane -1,2,3,4-tetracarboxylic dianhydride, pyrrolidine-2,3,4,5-tetracarboxylic dianhydride, 1,2,3,4-cyclobutanetetracarboxylic dianhydride, bis (Exo-bicyclo [2,2,1] heptane-2,3-
Dicarboxylic dianhydride) sulfone, bicyclo- (2,2,
2) -Oct-7-ene-2,3,5,6-tetracarboxylic dianhydride, 2,2-bis (3,4-dicarboxyphenyl) hexafluoropropane dianhydride, 2,2-bis [4- (3,4-
Dicarboxyphenyl) phenyl] hexafluoropropane dianhydride, 4,4'-bis (3,4-dicarboxyphenoxy) diphenyl sulfide dianhydride, 1,4-bis (2
-Hydroxyhexafluoroisopropyl) benzenebis (trimellitic anhydride). 1,3-bis (2-hydroxyhexafluoroisopropyl) benzenebis (trimellitic anhydride), 5- (2,5-dioxotetrahydrofuryl) -3-methyl-3-cyclohexene-1,2-
Dicarboxylic dianhydride, tetrahydrofuran-2,3,4,5
-Tetracarboxylic dianhydride and the like, and two or more kinds may be used as a mixture.

As the diamine used as a raw material of the polyimide resin, o-phenylenediamine, m-phenylenediamine, p-phenylenediamine, 3,3'-diaminodiphenyl ether, 3,4'-diaminodiphenyl ether, 4,4'-diaminodiphenyl ether , 3,3'-diaminodiphenylmethane, 3,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylmethane, bis (4-
Amino-3,5-dimethylphenyl) methane, bis (4-
Amino-3,5-diisopropylphenyl) methane, 3,3 '
-Diaminodiphenyldifluoromethane, 3,4'-diaminodiphenyldifluoromethane, 4,4'-diaminodiphenyldifluoromethane, 3,3'-diaminodiphenylsulfone, 3,4'-diaminodiphenylsulfone, 4,
4'-diaminodiphenylsulfone, 3,3'-diaminodiphenylsulfide, 3,4'-diaminodiphenylsulfide, 4,4'-diaminodiphenylsulfide, 3,3 '
-Diaminodiphenyl ketone, 3,4'-diaminodiphenyl ketone, 4,4'-diaminodiphenyl ketone, 2,2-
Bis (3-aminophenyl) propane, 2,2 '-(3,4'
-Diaminodiphenyl) propane, 2,2-bis (4-aminophenyl) propane, 2,2-bis (3-aminophenyl) hexafluoropropane, 2,2- (3,4'-diaminodiphenyl) hexafluoropropane , 2,2-bis (4-aminophenyl) hexafluoropropane, 1,3
-Bis (3-aminophenoxy) benzene, 1,4-bis (3-aminophenoxy) benzene, 1,4-bis (4-
Aminophenoxy) benzene, 3,3 '-(1,4-phenylenebis (1-methylethylidene)) bisaniline,
4 '-(1,4-phenylenebis (1-methylethylidene)) bisaniline, 4,4'-(1,4-phenylenebis (1-methylethylidene)) bisaniline, 2,2-bis (4- (3 -Aminophenoxy) phenyl) propane,
2,2-bis (4- (4-aminophenoxy) phenyl)
Propane, 2,2-bis (4-3-aminophenoxy) phenyl) hexafluoropropane, 2,2-bis (4-
(4-aminophenoxy) phenyl) hexafluoropropane, bis (4- (3-aminophenoxy) phenyl) sulfide, bis (4- (4-aminophenoxy)
Aromatic diamines such as phenyl) sulfide, bis (4- (3-aminophenoxy) phenyl) sulfone, and bis (4- (4-aminophenoxy) phenyl) sulfone;
1,2-diaminoethane, 1,3-diaminopropane, 1,4-
Diaminobutane, 1,5-diaminopentane, 1,6-diaminohexane, 1,7-diaminoheptane, 1,8-diaminooctane, 1,9-diaminononane, 1,10-diaminodecane, 1,11-diaminoundecane And aliphatic diamines such as 1,12-diaminododecane and the like, and two or more kinds may be used in combination.

A polyimide can be obtained by subjecting a tetracarboxylic dianhydride and a diamine to a condensation reaction by a known method. That is, in an organic solvent, tetracarboxylic dianhydride and diamine are used in an equimolar or almost equimolar manner (addition order of each component is arbitrary), and the reaction is carried out at a reaction temperature of 80 ° C or lower, preferably 0 to 50 ° C. As the reaction proceeds, the viscosity of the reaction solution gradually increases, and polyamic acid, which is a precursor of polyimide, is generated.

The polyimide can be obtained by dehydrating and ring-closing the above reactant (polyamic acid). The dehydration ring closure can be carried out by a method of heat treatment at 120 ° C. to 250 ° C. or a chemical method.

A glycidyl ether type, glycidylamine type, glycidyl ester type, or alicyclic epoxy resin is used as the organic material of the film-like organic die bonding material of the present invention.

As described above, in the method for manufacturing a semiconductor device of the present invention, the conditions for die bonding are as follows: a temperature of 100 to 350 ° C. and a time of 0.1.
20 seconds, preferably pressure 0.1~30gf / mm ^2, a temperature of 150 to 250
° C, time 0.1 second or more and less than 2 seconds, pressure 0.1-4 gf / mm ² is more preferable, temperature 150-250 ° C, time 0.1 second or more and 1.5 seconds or less,
A pressure of 0.3-2 gf / mm ² is most preferred.

If a film having an elastic modulus at 250 ° C. of the film-like organic die bonding material of 10 MPa or less is used, the temperature is 150 to
Die bonding is performed under the conditions of 250 ° C., time of 0.1 second or more and less than 2 seconds, and pressure of 0.1 to 4 gf / mm ² , and a sufficient peel strength (for example, strength of 0.5 kgf / 5 × 5 mm chip or more) can be obtained.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a sectional view showing an example of a manufacturing process of a semiconductor device according to the present invention.

FIG. 2 is a front view illustrating a method for measuring the peel strength using a push-pull gauge.

FIG. 3 is a plan view of an example of a lead frame having a die pad portion.

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described, but the present invention is not limited to these embodiments. The polyimides used in the following examples are all obtained by mixing equimolar acid anhydrides and diamines in a solvent and heating to polymerize. In each of the following examples, polyimide A is a polyimide synthesized from 1,2- (ethylene) bis (trimellitate anhydride) and bis (4-amino-3,5-dimethylphenyl) methane, and polyimide B
Is 1,2- (ethylene) bis (trimellitate anhydride)
And polyimide synthesized from 4,4'-diaminodiphenyl ether. Polyimide C is composed of 1,2- (ethylene) bis (trimellitate anhydride), bis (4-amino-3,5-diisopropylphenyl) methane and Polyimide D is composed of 1,2- (ethylene) bis (trimellitate anhydride) and 2,2-bis [4
-(4-aminophenoxy) phenyl] propane, and polyimide E is 1,2-
(Ethylene) bis (trimellitate anhydride) and 1,10
Polyimide synthesized from an equimolar mixture of-(decamethylene) bis (trimellitate anhydride) and 2,2-bis [4- (4-aminophenoxy) phenyl] propane, and polyimide F is 1,10- ( This is a polyimide synthesized from decamethylene) bis (trimellitate anhydride) and 2,2-bis [4- (4-aminophenoxy) phenyl] propane.

Example 1 To 100 g of polyimide and 10 g of epoxy resin shown in Table 1,
Add and dissolve 280 g of organic solvent. Here, a predetermined amount of silver powder is added, stirred well, and uniformly dispersed to obtain a coating varnish.

This coated varnish is applied to a carrier film (OPP film:
It was coated on a biaxially oriented polypropylene) and heated in a hot air circulation type drier to evaporate and dry the solvent to produce a film-shaped organic die bonding material having the composition and water absorption shown in Table 1.

The film-shaped organic die bonding material shown in Table 1 was attached on the tab of the lead frame by heating at 160 ° C., and the temperature of 300 ° C., the pressure of 12.5 gf / mm ² , In 5 seconds, the semiconductor element was mounted, wire-bonded, and molded with a sealing material (CEL-9000, manufactured by Hitachi Chemical Co., Ltd.) to manufacture a semiconductor device. (QFP (Quad Flat Pac
kage) Package 14 × 20 × 1.4mm, chip size 8 × 10m
m, 42 alloy lead frame) Semiconductor device after sealing in a thermo-hygrostat at 85 ° C and 85% RH
After the treatment for 168 hours, it is heated at 240 ° C. for 10 seconds in an IR reflow furnace.

Thereafter, the semiconductor device was cast with a polyester resin, and a cross section cut with a diamond cutter was observed with a microscope, and a reflow crack generation rate (%) was measured by the following formula to evaluate reflow crack resistance.

(Number of occurrences of reflow cracks / number of tests) × 100 = reflow crack occurrence rate (%) Table 1 shows the evaluation results.

The method of measuring the absorptance is as follows.

A film having a size of 50 × 50 mm is used as a sample. The sample is dried in a vacuum drier at 120 ° C. for 3 hours, and is allowed to cool in a desiccator. The sample is immersed in distilled water at room temperature for 24 hours and then taken out. The sample surface is wiped with filter paper and weighed quickly to obtain M2.

The water absorption was calculated as [(M2-M1) / (M1 / d)] × 100 = water absorption (vol%). d is the density of the film-shaped organic die bonding material.

Example 2 To 100 g of polyimide and 10 g of epoxy resin shown in Table 2,
Add and dissolve 280 g of organic solvent. Here, a predetermined amount of silver powder is added, stirred well, and uniformly dispersed to obtain a coating varnish.

This coated varnish is applied to a carrier film (OPP film:
It was applied on a biaxially stretched polypropylene) and heated in a hot air circulating drier to evaporate and dry the solvent to produce a film-shaped organic die bonding material having the composition and saturated moisture absorption shown in Table 2.

On the tab of the lead frame, apply the film-shaped organic die bonding material of Table 2 at 160 ° C by heating and apply the film-shaped organic die bonding material to the lead frame.
In Nos. 1 to 6 and the comparative example, the temperature was 300 ° C and the pressure was 12.5 gf / mm.
² , time 5 seconds, No.7 ~ 10, temperature 230 ℃, pressure 0.6gf /
mm ^2, at time 1 second, to mount the semiconductor element performs a wire bonding, sealing material (Hitachi Chemical Co., Ltd.,
A semiconductor device was manufactured by molding with CEL-9000 (trade name). (QFP package 14 × 20 × 1.4mm, chip size 8 ×
10mm, 42 alloy lead frame) The sealed semiconductor device is placed in a 85 ° C, 85% RH constant temperature and humidity chamber.
After the treatment for 168 hours, it is heated at 240 ° C. for 10 seconds in an IR reflow furnace.

Thereafter, the semiconductor device was cast with a polyester resin, and a cross section cut with a diamond cutter was observed with a microscope, and a reflow crack generation rate (%) was measured by the following formula to evaluate reflow crack resistance.

(Number of occurrences of reflow cracks / number of tests) × 100 = reflow crack occurrence rate (%) Table 2 shows the evaluation results.

The method of measuring the saturated moisture absorption is as follows.

A circular film-shaped organic die bonding material with a diameter of 100 mm was used as a sample, and the sample was dried at 120 ° C in a vacuum dryer.
After being dried for 3 hours, and allowed to cool in a desiccator, the dry weight is measured and defined as M1. A sample is taken out after absorbing moisture in a constant temperature and humidity chamber of 85 ° C. and 85% RH, and is weighed quickly. When the weighed value becomes constant, the weight is defined as M2.

The saturated moisture absorption was calculated as [(M2−M1) / (M1 / d)] × 100 = saturated moisture absorption (vol%). d is the density of the film-shaped organic die bonding material.

Example 3 140 g of dimethylacetamide and 140 g of cyclohexanone as solvents are dissolved in 100 g of polyimide F and 10 g of epoxy resin. Here, 74 g of silver powder is added, stirred well, and uniformly dispersed to obtain a coating varnish.

This coated varnish is applied to a carrier film (OPP film:
(Biaxially oriented polypropylene), and heated to a temperature of 80 to 120 ° C in a hot air circulating dryer to evaporate and dry the solvent to produce a die bonding film with residual volatile components shown in Table 3. did. However, if the drying temperature is higher than 120 ° C, after drying on the OPP film at 80 ° C for 30 minutes, the film-shaped organic die bonding material is peeled off from the OPP film, and this is fixed with an iron frame. Then, it was heated again in a dryer and dried.

On the tab of the lead frame, apply the film-shaped organic die bonding material of Table 3 by heating at 160 ° C, and attach the film-shaped organic die bonding material to the lead frame.
At a temperature of 230 ° C., a pressure of 0.6 gf / mm ² , and a time of 1 second, the semiconductor element is mounted, wire-bonded, and molded with a sealing material (trade name: CEL-9000, manufactured by Hitachi Chemical Co., Ltd.). Was manufactured. (QFP package 14 × 20 ×
1.4mm, chip size 8 × 10mm, 42 alloy lead frame) The sealed semiconductor device is placed in a 85 ° C, 85% RH constant temperature and humidity chamber.
After the treatment for 168 hours, it is heated at 240 ° C. for 10 seconds in an IR reflow furnace.

Thereafter, the semiconductor device was cast with a polyester resin, and a cross section cut with a diamond cutter was observed with a microscope, and a reflow crack generation rate (%) was measured by the following formula to evaluate reflow crack resistance.

(Number of occurrences of reflow cracks / number of tests) × 100 = reflow crack occurrence rate (%) Table 3 shows the evaluation results.

The existing volatile matter measuring method is as follows.

A film-shaped organic die bonding material having a size of 50 × 50 mm was used as a sample, and the weight of the sample was measured to be M1. The sample was heated in a hot-air circulating thermostat at 200 ° C. for 2 hours, weighed as M2, and [(M2- M1) / M1] × 100 = residual volatiles (wt%), and the residual volatiles were calculated.

Example 4 140 g of dimethylacetamide and 140 g of cyclohexanone as solvents are dissolved in 100 g of polyimide D and 10 g of epoxy resin. Here, 74 g of silver powder is added, stirred well, and uniformly dispersed to obtain a coating varnish.

This coated varnish is applied to a carrier film (OPP film:
It was coated on a biaxially oriented polypropylene) and heated in a hot air circulation type drier at a temperature of 80 ° C. to 120 ° C. to evaporate and dry the solvent, thereby producing a void bonding film shown in Table 5.

However, if the drying temperature is higher than 120 ° C, after drying on the OPP film at 80 ° C for 30 minutes, the film-shaped organic die bonding material is peeled off from the OPP film, and this is fixed with an iron frame. Was heated again in a drier and dried.

Here, the void volume ratio is a void volume ratio of voids existing at the interface between the die bonding material and the support member when the semiconductor element is bonded to the support member.

On the tab of the lead frame, apply the film-shaped organic die bonding material of Table 4 by heating at 160 ° C, and attach the film-shaped organic die bonding material to the lead frame.
At a temperature of 300 ° C., a pressure of 12.5 gf / mm ² and a time of 5 seconds, the semiconductor element is mounted, wire-bonded, and molded with a sealing material (trade name: CEL-9000, manufactured by Hitachi Chemical Co., Ltd.). Was manufactured. (QFP package 14 × 20 ×
1.4mm, chip size 8 × 10mm, 42 alloy lead frame) The sealed semiconductor device is placed in a 85 ° C, 85% RH constant temperature and humidity chamber.
After the treatment for 168 hours, it is heated at 240 ° C. for 10 seconds in an IR reflow furnace.

Thereafter, the semiconductor device was cast with a polyester resin, and a cross section cut with a diamond cutter was observed with a microscope, and a reflow crack generation rate (%) was measured by the following formula to evaluate reflow crack resistance.

(Number of occurrences of reflow cracks / number of tests) × 100 = reflow crack occurrence rate (%) The evaluation results are shown in Table 4.

The method of measuring the void volume ratio is as follows.

A lead frame and a silicon chip are bonded with a film-like organic die bonding material to prepare a sample, and a soft X
The image observed from the upper surface of the sample was photographed using a line device. The area ratio of voids in the photograph was measured by an image analyzer, and the area ratio of voids as seen through from the upper surface = the volume ratio of voids (%).

Example 5 To 100 g of polyimide and 10 g of epoxy resin shown in Table 5,
Add and dissolve 280 g of organic solvent. Here, a predetermined amount of silver powder is added, stirred well, and uniformly dispersed to obtain a coating varnish.

This coated varnish is applied to a carrier film (OPP film;
It was coated on a biaxially oriented polypropylene) and heated in a hot air circulation type drier to evaporate and dry the solvent to produce a film-shaped organic die bonding material having the composition and peel strength shown in Table 5.

Here, the peel strength is the peel strength of the film-shaped organic die bonding material at the stage when the semiconductor element is bonded to the supporting member via the film-shaped organic die bonding material.

On the tab of the lead frame, apply the film-shaped organic die bonding material shown in Table 5 at 160 ° C by heating and apply N to the lead frame to which the film-shaped organic die bonding material is attached.
o. 1-5, temperature 300 ° C, pressure 12.5gf / mm ² , time 5 seconds, No. 6-10, temperature 230 ° C, pressure 0.6gf / m
The semiconductor element was mounted, wire-bonded, and molded with a sealing material (trade name: CEL-9000, manufactured by Hitachi Chemical Co., Ltd.) in m ² for 1 second to manufacture a semiconductor device. (QFP package 14 × 20 × 1.4mm, chip size 8 ×
10mm, 42 alloy lead frame) The sealed semiconductor device is placed in a 85 ° C, 85% RH constant temperature and humidity chamber.
After the treatment for 168 hours, it is heated at 240 ° C. for 10 seconds in an IR reflow furnace.

Thereafter, the semiconductor device was cast with a polyester resin, and a cross section cut with a diamond cutter was observed with a microscope, and a reflow crack generation rate (%) was measured by the following formula to evaluate reflow crack resistance.

(Number of occurrences of reflow cracks / number of tests) × 100 = reflow crack occurrence rate (%) Table 5 shows the evaluation results.

Peel strength measurement method A 5 x 5 mm silicon chip (test piece) bonded to a support member for supporting a semiconductor element, such as a tab surface of a lead frame, with a film-like organic die bonding material interposed therebetween, is 240 Fig. 2
Test speed using a push-pull gauge as shown in
The peel strength was measured at 0.5 mm / min. In FIG. 2, 21
Is a semiconductor element, 22 is a film-like organic die bonding material, 23 is a lead frame, 24 is a push-pull gauge, 25
Is a hot plate. In this case, the measurement was carried out at 240 ° C. for 20 seconds, but when the temperature at which the semiconductor device was mounted was different depending on the purpose of use of the semiconductor device, the measurement was carried out at the semiconductor device mounting temperature.

Example 6 Organic solvent 28 was added to 100 g of polyimide E and 10 g of epoxy resin.
Add 0 g and dissolve. Here, a predetermined amount of silver powder is added,
Stir well and disperse uniformly to obtain coating varnish.

This coated varnish is applied to a carrier film (OPP film;
It was coated on a biaxially oriented polypropylene) and heated in a hot air circulation type drier to evaporate and dry the solvent to produce a film-shaped organic die bonding material.

A film-shaped organic die bonding material having a size shown in Table 6 was stuck at 160 ° C. on the tab of the lead frame, and a temperature of 300 ° C. and a pressure of 12.5 gf / mm ² were applied to the lead frame to which the film-shaped organic die bonding material was stuck. For 5 seconds, the semiconductor element was mounted, wire-bonded, and molded with a sealing material (CEL-9000, manufactured by Hitachi Chemical Co., Ltd.) to produce a semiconductor device. (QFP Package 1
(4 × 20 × 1.4mm, chip size 8 × 10mm, 42 alloy lead frame) The sealed semiconductor device is placed in a thermo-hygrostat at 85 ° C and 85% RH.
After the treatment for 168 hours, it is heated at 240 ° C. for 10 seconds in an IR reflow furnace.

Thereafter, the semiconductor device was cast with a polyester resin, and a cross section cut with a diamond cutter was observed with a microscope, and a reflow crack generation rate (%) was measured by the following formula to evaluate reflow crack resistance.

(Number of occurrences of reflow cracks / number of tests) × 100 = reflow crack occurrence rate (%) Table 6 shows the evaluation results.

Example 7 An organic solvent 28 was added to 100 g of polyimide F and 10 g of epoxy resin.
Add 0 g and dissolve. Here, a predetermined amount of silver powder is added,
Stir well and disperse uniformly to obtain coating varnish.

This coated varnish is applied to a carrier film (OPP film;
It was coated on a biaxially oriented polypropylene) and heated in a hot air circulation type drier to evaporate and dry the solvent to produce a film-shaped organic die bonding material.

The film-shaped organic die-bonding material having an elastic modulus of 250 ° C in Table 7 was adhered by heating at 160 ° C on the tab of the lead frame, and the die-bonding conditions in Table 7 were applied to the lead frame to which the film-shaped organic die-bonding material was adhered. Then, when the semiconductor element was mounted, the peel strength was as shown in Table 7.

Film elastic modulus (MPa) measurement method Using a rheograph solid S type manufactured by Toyo Seisakusho Co., Ltd., measure dynamic viscoelasticity at a heating rate of 5 ° C./min and a frequency of 10 Hz, and store at 250 ° C. The elastic modulus E 'was defined as the elastic modulus.

Peel strength measurement method Same as Example 5.

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Iwano Maekawa 4-46-24 Nishi-Narizawa, Hitachi City, Ibaraki Prefecture (72) Inventor Mitsuo Yamazaki 2565-17 Ishitaki, Takahagi City, Ibaraki Prefecture (72) Inventor Akira Kageyama Saitama 5-5-8-303 Niiza Ichidera

Claims (7)

(57) [Claims] 1. A semiconductor device comprising: a support member; a semiconductor element; a die bonding material for bonding the semiconductor element to the support member; and a resin sealing member for sealing the semiconductor element. Has a water absorption of 1.5% by volume or less and an elastic modulus at 250 ° C.
A semiconductor device, which is a film containing an organic substance of 10 MPa or less. 2. The above-mentioned die bonding material has a residual volatile component.
2. The semiconductor device according to claim 1, wherein the content is 3.0% by weight or less. 3. The die bonding material has a peel strength of 0.5 k when the semiconductor element is bonded to the support member.
3. The semiconductor device according to claim 1, wherein the size of the semiconductor device is at least gf / 5 mm.times.5 mm. 4. The die bonding material has a saturated moisture absorption rate.
4. The composition according to claim 2, wherein the content is 1.0% by volume or less.
13. The semiconductor device according to claim 1. 5. The die bonding material according to claim 1, wherein the void existing inside the die bonding material and an interface between the die bonding and the support member has a void volume ratio when the semiconductor element is bonded to the support member. The semiconductor device according to claim 1, wherein the content is 10% or less. 6. The area of the front and back of the die bonding material is:
The die bonding material is a film that does not protrude from between the semiconductor element and the support member at the stage of bonding the semiconductor element to the support member. The semiconductor device according to claim 1, wherein: 7. The front and back area of the die bonding material is as follows:
6. The semiconductor device according to claim 5, wherein each of the areas is smaller than the area of the bonding surface of the semiconductor element.