JP3017822B2 - Method for producing Si3N4 based sliding material - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a Si ₃ N ₄ type sliding material, and more particularly, it is used for a sliding material for a wide range of rotating machine parts, and has corrosion resistance, wear resistance, heat resistance, etc. The present invention relates to a method for producing a Si ₃ N ₄ based sliding material excellent in quality.

[0002]

BACKGROUND OF THE INVENTION Generally, Si ₃
N ₄ based sliding member, the corrosion resistance, abrasion resistance and excellent heat resistance, long service life, the mechanical seal and bearings or the like to be used under severe conditions become indispensable I have.

In a mechanical seal, if a fine spiral groove is formed on a sliding surface, a pumping action occurs during sliding, and leakage from a rotating portion can be prevented. Further, when a fine spiral groove is formed in the thrust bearing, the fluid inside the device can be used as a working fluid for the bearing, and the structure of the device can be made compact and energy can be saved.

Conventionally, as a method of forming such a fine spiral groove, there is a method of coating a photoresist on the surface of a Si ₃ N ₄ -based sliding material and corroding an exposed portion by a method such as plasma etching. .

[0005] However, the method of forming such a groove requires a complicated process, is extremely costly, and is technically difficult.

SUMMARY OF THE INVENTION An object of the present invention is to form a fine spiral groove on a sliding surface at a low cost by a simple process.
An object of the present invention is to provide a method for producing an i ₃ N ₄ based sliding material.

[0007]

SUMMARY OF THE INVENTION In order to achieve the above object, the present invention provides a sliding member body made of Si ₃ N ₄ with one end face having less nitrogen ions or argon ions.
Either one of the ions is implanted at a predetermined acceleration voltage to form an ion-implanted portion, and the ion-implanted portion is masked so that a portion not subjected to masking remains in a spiral shape. On the other hand, a means is employed in which shot blasting is performed to remove a portion of the ion-implanted portion where no masking has been performed, thereby forming a spiral spiral groove on one end face of the sliding member main body. Further, one end surface of the sliding material main body made of Si ₃ N ₄ is provided with nitrogen ions or argon ions.
At least one of the ions is implanted at a predetermined acceleration voltage to form an ion-implanted portion. Shot blasting is performed to remove the ion-implanted portion of the unmasked portion to form a spiral spiral groove on one end surface of the sliding member main body, heat-treated at a predetermined temperature, and removed. This means employs a means for recrystallizing the remaining ion-implanted portion.

[0008]

DETAILED DESCRIPTION OF THE INVENTION The present invention by employing the means described above, since the Si ₃ N ₄ of the ion implantation portion is softened, it is possible to easily form a fine spiral spiral grooves on the sliding surface. In addition, the Si ₃ N manufactured according to the present invention
_{When the 4} series sliding material is used for mechanical seals, bearings, etc., it will exhibit predetermined sliding characteristics.

[0009]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of a method for manufacturing a Si ₃ N ₄ based sliding material according to the present invention will be described below with reference to the drawings. FIG.
5 to 5 show an embodiment of a method of manufacturing a Si ₃ N ₄ based sliding material used for a mechanical seal.

First, as shown in FIGS. 1 and 2, Si ₃ N
_At least one of nitrogen ions and argon ions is provided on the entire axial end surface of the annular sliding member body 2 composed of _four materials.
One of the ions is implanted at a predetermined acceleration voltage to form an ion implanted portion 5. As a result of the ion implantation, Si ₃ N ₄ becomes amorphous in the ion implantation unit 5 and is softened as compared with Si ₃ N ₄ before the ion implantation.

The thickness of the ion-implanted portion 5 made amorphous is proportional to the acceleration voltage value at the time of the ion implantation. Next, as shown in FIGS. 3 and 4, masking 6 is applied to the ion-implanted portion 5 so that a portion not subjected to masking 6 remains in a spiral shape.

Then, shot blasting is performed on a portion of the ion implantation section 5 where the masking 6 is not applied. The ion implantation part 5 is provided with Si ₃ N as a result of the ion implantation.
_{Since 4} is amorphous and softened, when shot blasting is performed, it is removed at a removal rate five times or more that of normal Si ₃ N ₄ .

[0013] A spiral groove 4 is formed in a portion of the ion implantation portion 5 where the masking 6 has not been applied.

Next, the masking 6 is removed, and a heat treatment is performed at a predetermined temperature on the ion-implanted portion 5 which has not been removed from the sliding member main body 2 so as to form amorphous Si ₃ N.
₄ is recrystallized to restore the original strength of Si ₃ N ₄ to form the sliding surface 3. Thus, the Si shown in FIG.
₃ for producing a N ₄ system sliding member 1.

According to the method for manufacturing a Si ₃ N ₄ based sliding material of the present invention as described above, a spiral groove having a predetermined shape can be easily formed on a sliding surface. Further, when the Si ₃ N ₄ based sliding material 1 manufactured according to the present invention is used as a sliding material for a mechanical seal, a pumping action is generated during sliding, thereby preventing leakage from a rotating part.

Next, another embodiment of the method for producing a Si ₃ N ₄ based sliding material will be described. 6 to 10 show an embodiment of a method of manufacturing a Si ₃ N ₄ based sliding material used for a thrust bearing.

First, as shown in FIGS. 6 and 7, Si ₃ N
_At least the nitrogen ions or the argon ions are formed over the entire axial end surface of the disk-shaped sliding member body 12 composed of _four materials.
One of the ions is implanted at a predetermined acceleration voltage,
The ion implantation part 15 is formed.

In the ion implantation section 15, Si ₃ N ₄ is made amorphous as a result of the ion implantation, and is softened as compared with Si ₃ N ₄ before the ion implantation. Also,
The thickness of the amorphized ion implantation unit 15 is proportional to the acceleration voltage value at the time of the ion implantation.

Next, as shown in FIGS. 8 and 9, masking 16 is applied to the ion-implanted portion 15 so that a portion not subjected to masking 16 remains in a spiral shape. Then, shot blast is performed on a portion of the ion implanted portion 15 where the masking 16 is not applied.

[0020] The ion implantation part 15 as a result of ions implanted, since the Si ₃ N ₄ is softened by amorphous, when the shot blasting, typically the Si ₃ N ₄
Is removed at a removal rate of 5 times or more. Then, a spiral spiral groove 14 is formed in a portion of the ion implantation portion 15 where the masking 16 has not been applied.

Next, the masking 16 is removed, and a heat treatment is performed at a predetermined temperature on the ion-implanted portion 15 remaining without removing the sliding member main body 12, thereby forming the amorphous material S.
The sliding surface 13 is formed by recrystallizing i ₃ N ₄ and restoring the original strength of Si ₃ N ₄ . Thus, the Si ₃ N ₄ based sliding material 11 shown in FIG. 10 is manufactured.

According to the method of manufacturing a Si ₃ N ₄ based sliding material of the present invention as described above, a spiral groove having a predetermined shape can be easily formed on a sliding surface. Further, when the Si ₃ N ₄ -based sliding material 11 manufactured according to the present invention is used as a sliding material for a thrust bearing, the fluid inside the device can be used as a working fluid for the bearing, and the structure of the device can be reduced. Compactness and energy saving can be achieved. In both embodiments, the means for recrystallizing the Si ₃ N ₄ which has been made amorphous by the heat treatment is employed, but the present invention is not limited to this, and the means may be recrystallized by other means.

[Embodiment 1] Ion implantation is performed under the condition that the ion species is Ar ⁺ and the acceleration voltage value is 800 keV. After masking, shot blasting was performed for 30 minutes. Next, the masking was removed and the formed spiral groove was observed.
It was confirmed that a μm groove was formed.

[0024]

According to the present invention, as described above, the spiral groove is easily formed on the sliding surface in a short time by softening Si ₃ N ₄ by ion implantation and performing shot blasting. It has an excellent effect that it can be performed.

[Brief description of the drawings]

FIG. 1 is a schematic front view showing a state after ion implantation in one embodiment of a method of manufacturing a Si ₃ N ₄ based sliding material according to the present invention.

FIG. 2 is a schematic right side view showing the right side of FIG.

FIG. 3 is a schematic front view showing a state in which an ion implanted portion is masked in one embodiment of the method for producing a Si ₃ N ₄ based sliding material according to the present invention.

FIG. 4 is a schematic right side view showing the right side of FIG. 3;

5 is a schematic front view showing one of the examples manufactured Si ₃ N ₄ based sliding material of the production method the Si ₃ N ₄ based sliding material according to the present invention.

FIG. 6 is a schematic front view showing a state after ion implantation in another embodiment of the method for manufacturing a Si ₃ N ₄ based sliding material according to the present invention.

FIG. 7 is a schematic right side view showing the right side of FIG. 6;

FIG. 8 is a schematic front view showing a state in which an ion implanted portion is masked in another embodiment of the method of manufacturing a Si ₃ N ₄ based sliding material according to the present invention.

FIG. 9 is a schematic right side view showing the right side of FIG. 8;

10 is a schematic front view showing another examples manufactured Si ₃ N ₄ based sliding material of the production method the Si ₃ N ₄ based sliding material according to the present invention.

[Explanation of symbols]

1,11 ...... Si ₃ N ₄ based sliding material 2,12 ...... sliding member body 3,13 ...... sliding surface 4, 14 ...... spiral grooves 5,15 ...... ion implantation section 6, 16 ...... masking

──────────────────────────────────────────────────の Continuation of the front page (51) Int.Cl. ⁷ identification code FI C10N 70:00 (58) Field surveyed (Int.Cl. ⁷ , DB name) C10M 103/00-103/06 C09K 3/10 F16J 15/34 C04B 35/56

Claims (2)

(57) [Claims] 1. A method according to claim 1, wherein said one end surface of said sliding material body made of Si ₃ N ₄ has a small amount of nitrogen ions or argon ions.
Either one of the ions is implanted at a predetermined acceleration voltage to form an ion-implanted portion, and the ion-implanted portion is masked so that a portion not subjected to masking remains in a spiral shape. S is subjected to shot blasting to remove the ion-implanted portion of the unmasked portion to form a spiral spiral groove on one end surface of the sliding member main body.
i ₃ N ₄ system manufacturing method of the sliding member. 2. The method according to claim 1, wherein the sliding member body made of Si ₃ N ₄ is provided with one end face of nitrogen or argon ions on one end face thereof.
Either one of the ions is implanted at a predetermined accelerating voltage to form an ion-implanted portion. Shot blasting is performed to remove the ion-implanted portion of the unmasked portion to form a spiral spiral groove on one end surface of the sliding member main body, heat-treated at a predetermined temperature, and removed. A method for producing a Si ₃ N ₄ -based sliding material, characterized by recrystallizing the remaining ion-implanted portion.