JP3013454B2 - Resin sealing method for electronic components - Google Patents
Resin sealing method for electronic componentsInfo
- Publication number
- JP3013454B2 JP3013454B2 JP3014528A JP1452891A JP3013454B2 JP 3013454 B2 JP3013454 B2 JP 3013454B2 JP 3014528 A JP3014528 A JP 3014528A JP 1452891 A JP1452891 A JP 1452891A JP 3013454 B2 JP3013454 B2 JP 3013454B2
- Authority
- JP
- Japan
- Prior art keywords
- resin
- wire
- filler
- sealing method
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ハイブリッドＩＣ等の
電子部品の樹脂封止方法、特にサーマルプリンタのサー
マルプリントヘッド基板上に実装したチップの封止方法
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of sealing electronic components such as hybrid ICs with a resin, and more particularly to a method of sealing a chip mounted on a thermal print head substrate of a thermal printer.
【０００２】[0002]
【従来の技術】ハイブリッドＩＣ等のチップを多数個配
列し、これらを樹脂によってモールドする封止方法は既
知である。例えば図３に示す如く、サーマルプリンタの
サーマルプリントヘッドでは、プリントヘッド基板３０
上に発熱抵抗体３１とこれを作動させる複数の駆動用Ｉ
Ｃ（ベアーチップ）３２が実装されている。各駆動用Ｉ
Ｃ３２は基板３０上の導体パターン（特に図示せず）に
ワイヤ３５、３６で接続（ワイヤボンディング）され、
更にワイヤと導体との接続部も含めてＩＣ３２及びワイ
ヤ３５、３６の全体が樹脂３９でモールドされている。2. Description of the Related Art A sealing method of arranging a large number of chips such as hybrid ICs and molding them with a resin is known. For example, as shown in FIG. 3, in a thermal print head of a thermal printer, a print head substrate 30 is provided.
A heating resistor 31 and a plurality of driving I's for operating the heating resistor 31
A C (bear chip) 32 is mounted. Each drive I
C32 is connected (wire-bonded) to a conductor pattern (not particularly shown) on the substrate 30 by wires 35 and 36,
Further, the entirety of the IC 32 and the wires 35 and 36 including the connection between the wire and the conductor are molded with the resin 39.
【０００３】[0003]
【発明が解決しようとする課題】通常、樹脂モールド３
９は、１種類、即ち１水準のフィラー径からなる樹脂が
使用される。この場合、樹脂の性能として、モールド３
９の幅Ｗと高さＨを共に可及的に小さく塗布できること
が要求される。この要求に対し、一般に高さＨを小さく
するにはフィラー径の小さい樹脂を用いればよいが、粘
性低下により塗布後の樹脂キュア時に樹脂が流動し、逆
に幅Ｗが大きくなる傾向がある（図４参照）。Normally, the resin mold 3
For No. 9, one kind, that is, a resin having a one-level filler diameter is used. In this case, as the performance of the resin, the mold 3
It is required that both the width W and the height H can be applied as small as possible. In response to this requirement, generally, a resin having a small filler diameter may be used to reduce the height H. However, the resin tends to flow during curing of the resin after application due to a decrease in viscosity, and conversely, the width W tends to increase ( (See FIG. 4).
【０００４】一方、幅Ｗを小さくするにはフィラー径の
大きい樹脂であればよいが、粘性が増大するため塗布性
が悪くなり、塗布むらが生じ易くなる傾向がある。又、
樹脂がワイヤ３５、３６の下に沈降せず、樹脂モールド
３９内に空隙４０、４１が発生し易くなり、駆動用ＩＣ
３２の動作安定に信頼性を保てなくなる（図５参照）。On the other hand, a resin having a large filler diameter may be used to reduce the width W. However, since the viscosity is increased, the coatability is deteriorated, and uneven coating tends to occur. or,
The resin does not settle below the wires 35, 36, and the voids 40, 41 are easily generated in the resin mold 39, and the driving IC
Therefore, reliability cannot be maintained for stable operation of the P. 32 (see FIG. 5).
【０００５】従って、本発明の目的は、樹脂塗布性を損
なわず、しかも樹脂モールド内での空隙の発生を伴わな
い上で、樹脂モールドの幅と高さを一層小さくできる樹
脂封止方法を提供することにある。Accordingly, an object of the present invention is to provide a resin sealing method capable of further reducing the width and height of the resin mold without impairing the resin coatability and without generating voids in the resin mold. Is to do.
【０００６】[0006]
【課題を解決するための手段】本発明の電子部品の樹脂
封止方法は、ワイヤと導体との接続部及び接続部近傍の
ワイヤ部分に、平均粒径が少なくとも３０μｍ以上のフ
ィラー径を持つフィラー成分を含む樹脂を塗布し、ワイ
ヤの残部分とチップ全体に、平均粒径が少なくとも１０
μｍ以下のフィラー径を持つフィラー成分を含む樹脂を
塗布することを特徴とするものであり、前記目的が達成
される。According to the present invention, there is provided a resin sealing method for an electronic component, wherein a filler having an average particle diameter of at least 30 μm or more is provided at a connection portion between a wire and a conductor and at a wire portion near the connection portion. The resin containing the component is applied, and the average particle size is at least 10
The present invention is characterized in that a resin containing a filler component having a filler diameter of not more than μm is applied, and the above object is achieved.
【０００７】本発明の封止方法では、平均粒径が少なく
とも３０μｍ以上のフィラー径を持つフィラー成分を含
む樹脂と、平均粒径が少なくとも１０μｍ以下のフィラ
ー径を持つフィラー成分を含む樹脂との２種類の樹脂を
用い、樹脂モールドの幅の増加に寄与し易いモールドの
外側領域（ワイヤと導体との接続部及び接続部近傍のワ
イヤ部分）をフィラー径の大きいフィラーを含む樹脂
で、高さの増加に係わる内側領域（ワイヤの残部分とチ
ップ全体）をフィラー径の小さいフィラーを含む樹脂で
モールドする。これにより、樹脂モールドの幅と高さを
小さくできる上に、樹脂の塗布性や塗布後の信頼性が向
上する。In the sealing method of the present invention, a resin containing a filler component having an average particle diameter of at least 30 μm or more and a resin containing a filler component having an average particle diameter of at least 10 μm or less are used. The outer region of the mold (the connection portion between the wire and the conductor and the wire portion near the connection portion), which is likely to contribute to the increase in the width of the resin mold, is made of a resin containing a filler having a large filler diameter. The inner region (the remaining portion of the wire and the entire chip) related to the increase is molded with a resin containing a filler having a small filler diameter. Thereby, the width and height of the resin mold can be reduced, and the applicability of the resin and the reliability after the application are improved.
【０００８】平均粒径が少なくとも３０μｍ以上のフィ
ラー径を持つフィラー成分を含む樹脂は、成分全体とし
て平均粒径が上記値を満足すればよく、フィラー径の大
きい樹脂成分中にフィラー径の小さい樹脂成分が混在し
ても構わない。逆に、平均粒径が少なくとも１０μｍ以
下のフィラー径を持つフィラー成分を含む樹脂は、成分
全体として上記値の平均粒径を満足する限り、フィラー
径の小さい樹脂成分中にフィラー径の大きい樹脂成分が
混在しても差し支えない。ここで因みに、従来使用され
ていた樹脂中に含まれるフィラーのフィラー径の平均粒
径は２０〜４０μｍ程度である。[0008] The resin containing a filler component having a filler diameter of at least 30 µm or more has only to satisfy the above-mentioned average particle diameter as a whole. The components may be mixed. Conversely, a resin containing a filler component having an average particle diameter of at least 10 μm or less as long as a resin component having a large filler diameter is contained in a resin component having a small filler diameter as long as the entire component satisfies the above average particle diameter. May be mixed. Here, the average particle diameter of the filler contained in the conventionally used resin is about 20 to 40 μm.
【０００９】上記大小の平均粒径を有する樹脂として最
適なものとしては、例えばポリエーテルアミド系樹脂、
エポキシ系樹脂等が例示される。これらの樹脂を適宜選
択し、平均粒径が上記値になるよう大小異なるフィラー
径の成分を含む２種類の樹脂を調製する。なお、本発明
の封止方法は電子部品を対象とするものであるが、前述
したように特にサーマルプリンタのサーマルプリントヘ
ッド基板上に搭載される発熱抵抗体の駆動用ＩＣに適用
することができる。As the resin having the above-mentioned large and small average particle diameter, for example, polyether amide resin,
Epoxy resins and the like are exemplified. These resins are appropriately selected, and two kinds of resins containing components having different filler diameters are prepared so that the average particle diameter becomes the above value. Although the sealing method of the present invention is intended for electronic components, it can be particularly applied to an IC for driving a heating resistor mounted on a thermal print head substrate of a thermal printer as described above. .
【００１０】[0010]
【実施例】以下、本発明の電子部品の樹脂封止方法を実
施例に基づいて説明する。図１に本発明の封止方法によ
って電子部品（チップ）を樹脂モールドした例を示す。
基板１上にハイブリッドＩＣ等の多数のチップ２を並列
実装し、基板１上の導体パターン（特に図示せず）とチ
ップ２とをワイヤ３、４で接続（ワイヤボンディング）
してあるチップ実装基板において、樹脂塗布を例えばデ
ィスペンサー等で行う場合、まずワイヤ３、４と導体と
の接続部及びその近傍領域にフィラー径の大きい成分を
含む樹脂（前記平均粒径３０μｍ程度以上のもの）７、
７’を塗布する。塗布の仕方は、例えば一方側のワイヤ
７の領域から他方側のワイヤ７’の領域に向かってチッ
プ２の側面に沿ってＵ字状を描くように塗布する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a resin sealing method for an electronic component according to the present invention will be described with reference to embodiments. FIG. 1 shows an example in which an electronic component (chip) is resin-molded by the sealing method of the present invention.
A large number of chips 2 such as hybrid ICs are mounted on the substrate 1 in parallel, and a conductor pattern (not shown in particular) on the substrate 1 and the chip 2 are connected by wires 3 and 4 (wire bonding).
When a resin is applied to a chip mounting board with a dispenser or the like, first, a resin containing a component having a large filler diameter is used in a connection portion between the wires 3 and 4 and a conductor and a region in the vicinity thereof (the average particle diameter is about 30 μm or more). Thing) 7,
Apply 7 '. The application method is, for example, application in a U-shape along the side surface of the chip 2 from the area of the wire 7 on one side to the area of the wire 7 'on the other side.
【００１１】次に、ワイヤ３、４の残部分とチップ２の
全体を覆うようにフィラー径の小さい成分を含む樹脂
（前記平均粒径１０μｍ程度以下のもの）８を塗布す
る。塗布後、これらの樹脂７、７’、８に対してレベリ
ングを行った後、オーブンキュアを実施して樹脂を完全
に硬化させ、樹脂モールド９とする。このように、樹脂
モールドの幅を増加しがちな領域に高粘性の樹脂を塗布
し、キュア時における樹脂の流動挙動を阻止する一方、
モールドの高さに関連する領域に低粘性の樹脂を塗布
し、塗布性良好にして沈降も十分であり、モールドの幅
と高さを縮減できる。勿論、モールド内に空隙も殆ど生
じなくなる。Next, a resin (having an average particle diameter of about 10 μm or less) containing a component having a small filler diameter is applied so as to cover the remaining portions of the wires 3 and 4 and the entire chip 2. After the application, these resins 7, 7 ', and 8 are leveled, and then oven-cured to completely cure the resin, thereby obtaining a resin mold 9. In this way, a high-viscosity resin is applied to a region where the width of the resin mold tends to increase, while preventing the flow behavior of the resin during curing,
A low-viscosity resin is applied to the area related to the height of the mold, and the sedimentation is sufficient with good applicability, so that the width and height of the mold can be reduced. Of course, almost no voids are formed in the mold.
【００１２】この本発明の封止方法による特徴を活かす
べくサーマルプリンタのサーマルプリントヘッドに適用
した例を図２に示す。プリントヘッド基板１０上には、
発熱抵抗体１１が印字走査方向に配置され、これを作動
させるための多数の駆動用ＩＣ１２が並列・実装されて
いる。ＩＣ１２には前記封止方法の手順により樹脂モー
ルド１３が施される。ヘッド基板１０は、ＩＣ１２の配
線パターン等を有する回路基板１５と該基板１５に螺子
１６によって取付けた圧接カバー１７の圧接ゴム１８で
押圧・接続されている。又、回路基板１５の下面には接
続用コネクタ１９が設けられている。更に、ヘッド基板
１０と回路基板１５の一部は放熱を兼ねるアルミ製支持
板２０に固定される。FIG. 2 shows an example in which the present invention is applied to a thermal print head of a thermal printer to take advantage of the features of the sealing method of the present invention. On the print head substrate 10,
The heating resistor 11 is arranged in the print scanning direction, and a number of driving ICs 12 for operating the heating resistor 11 are mounted in parallel. The resin mold 13 is applied to the IC 12 by the procedure of the sealing method. The head substrate 10 is pressed and connected by a circuit board 15 having a wiring pattern and the like of the IC 12 and a press-contact rubber 18 of a press-contact cover 17 attached to the board 15 by screws 16. A connection connector 19 is provided on the lower surface of the circuit board 15. Further, a part of the head substrate 10 and a part of the circuit substrate 15 are fixed to an aluminum support plate 20 which also serves as heat radiation.
【００１３】かかる構造のプリントヘッド基板１０で
は、上記より樹脂モールド１３の幅Ｗを小さくできるか
ら、発熱抵抗体１１とモールド１３の端縁との間隔Ｌを
従来よりも短くでき、その分だけ基板１０の幅Ｂも小さ
くできる。この結果、基板１０自体の作製に際し、多数
の基板を取得でき、製造コストの低減を図れる。或い
は、間隔Ｌを従来と同等のままにし、より大きな直径の
プラテン２１にも対応できるようになる。In the print head substrate 10 having such a structure, since the width W of the resin mold 13 can be made smaller than the above, the distance L between the heating resistor 11 and the edge of the mold 13 can be made shorter than before, and the substrate The width B of 10 can also be reduced. As a result, when manufacturing the substrate 10 itself, a large number of substrates can be obtained, and the manufacturing cost can be reduced. Alternatively, the distance L can be kept equal to that of the related art, and the platen 21 having a larger diameter can be accommodated.
【００１４】[0014]
【発明の効果】本発明の電子部品の樹脂封止方法は、以
上説明したように、平均粒径が少なくとも３０μｍ以上
のフィラー径を持つフィラー成分を含む樹脂を、ワイヤ
と導体との接続部及び接続部近傍のワイヤ部分に塗布
し、平均粒径が少なくとも１０μｍ以下のフィラー径を
持つフィラー成分を含む樹脂を、ワイヤの残部分とチッ
プ全体に塗布するため、次の効果を有する。 （１）特にワイヤと導体との接続部が上記特定粒径を持
つフィラー径の大きい成分を含む樹脂で被覆されるた
め、ワイヤと導体との結合力が増加するだけでなく、接
続部でのワイヤの剥がれを効果的に防止することがで
き、ワイヤと導体との接続信頼性が向上する。 （２）樹脂モールドの幅及び高さを共に小さくできる。 （３）塗布むらが起こり難く、樹脂の塗布性が良好で且
つ安定する。 （４）樹脂モールド内（特にワイヤの下方部分）に空隙
等の欠陥は生起せず、信頼性が安定且つ向上する。As described above, the resin sealing method for an electronic component according to the present invention comprises, as described above, a resin containing a filler component having a filler diameter of at least 30 μm or more. Since the resin containing a filler component having an average particle diameter of at least 10 μm or less and applied to the remaining portion of the wire and the entire chip is applied to the wire portion near the connection portion, the following effects are obtained. (1) In particular, since the connecting portion between the wire and the conductor is covered with the resin containing the component having the specific particle diameter and a large filler diameter, not only the bonding force between the wire and the conductor increases, but also the connecting portion at the connecting portion Peeling of the wire can be effectively prevented, and connection reliability between the wire and the conductor is improved. (2) Both the width and height of the resin mold can be reduced. (3) Uneven coating is unlikely to occur, and the coating property of the resin is good and stable. (4) Defects such as voids do not occur in the resin mold (particularly below the wire), and the reliability is improved and stable.
【００１５】その上、樹脂モールド内に空隙等の欠陥は
生起せず、信頼性が安定且つ向上する。Furthermore, no defects such as voids occur in the resin mold, and the reliability is stabilized and improved.
【図１】本発明の封止方法によって施した樹脂モールド
の様子を示す一部省略断面図である。FIG. 1 is a partially omitted sectional view showing a state of a resin mold formed by a sealing method of the present invention.
【図２】本発明の封止方法による樹脂モールドを適用し
たサーマルプリントヘッドの側面図である。FIG. 2 is a side view of a thermal print head to which a resin mold according to the sealing method of the present invention is applied.
【図３】従来の樹脂モールドを施したプリントヘッド基
板の断面図である。FIG. 3 is a cross-sectional view of a conventional print head substrate provided with a resin mold.
【図４】従来の樹脂モールドの変更例を施したプリント
ヘッド基板の断面図である。FIG. 4 is a cross-sectional view of a print head substrate to which a modified example of a conventional resin mold is applied.
【図５】従来の樹脂モールドの更に別の変更例を施した
プリントヘッド基板の断面図である。FIG. 5 is a cross-sectional view of a print head substrate to which still another modified example of the conventional resin mold is applied.
１ 基板 ２ チップ（電子部品） ３・４ ワイヤ ７・７’ フィラー径の大きい成分を含む樹脂 ８ フィラー径の小さい成分を含む樹脂 ９ 樹脂モールド DESCRIPTION OF SYMBOLS 1 Substrate 2 Chip (electronic component) 3.4 Wire 7 7 'Resin containing a component with a large filler diameter 8 Resin containing a component with a small filler diameter 9 Resin mold
Claims (1)
し、チップとワイヤを樹脂でモールドする封止方法であ
って、ワイヤと導体との接続部及び接続部近傍のワイヤ
部分に、平均粒径が少なくとも３０μｍ以上のフィラー
径を持つフィラー成分を含む樹脂を塗布し、ワイヤの残
部分とチップ全体に、平均粒径が少なくとも１０μｍ以
下のフィラー径を持つフィラー成分を含む樹脂を塗布す
ることを特徴とする電子部品の樹脂封止方法。1. A sealing method for connecting a chip and a conductor on a substrate with a wire and molding the chip and the wire with a resin, comprising: a connecting portion between the wire and the conductor and a wire near the connecting portion.
A resin containing a filler component having an average particle diameter of at least 30 μm or more is applied to the portion, and the remaining wire is
The average particle size should be at least 10 μm over the part and the entire chip.
A resin sealing method for an electronic component, comprising applying a resin containing a filler component having the following filler diameter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3014528A JP3013454B2 (en) | 1991-02-05 | 1991-02-05 | Resin sealing method for electronic components |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3014528A JP3013454B2 (en) | 1991-02-05 | 1991-02-05 | Resin sealing method for electronic components |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04249330A JPH04249330A (en) | 1992-09-04 |
| JP3013454B2 true JP3013454B2 (en) | 2000-02-28 |
Family
ID=11863639
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3014528A Expired - Fee Related JP3013454B2 (en) | 1991-02-05 | 1991-02-05 | Resin sealing method for electronic components |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3013454B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08288426A (en) * | 1995-04-20 | 1996-11-01 | Nec Corp | Semiconductor device |
| JP6195031B1 (en) * | 2016-10-24 | 2017-09-13 | 三菱電機株式会社 | High frequency amplifier |
-
1991
- 1991-02-05 JP JP3014528A patent/JP3013454B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04249330A (en) | 1992-09-04 |
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