JP3013206B2 - Method for producing lithium niobate single crystal - Google Patents

Method for producing lithium niobate single crystal

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Publication number
JP3013206B2
JP3013206B2 JP3244077A JP24407791A JP3013206B2 JP 3013206 B2 JP3013206 B2 JP 3013206B2 JP 3244077 A JP3244077 A JP 3244077A JP 24407791 A JP24407791 A JP 24407791A JP 3013206 B2 JP3013206 B2 JP 3013206B2
Authority
JP
Japan
Prior art keywords
single crystal
crystal
lithium niobate
composition
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP3244077A
Other languages
Japanese (ja)
Other versions
JPH0558792A (en
Inventor
奨 目黒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokin Corp
Original Assignee
Tokin Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokin Corp filed Critical Tokin Corp
Priority to JP3244077A priority Critical patent/JP3013206B2/en
Publication of JPH0558792A publication Critical patent/JPH0558792A/en
Application granted granted Critical
Publication of JP3013206B2 publication Critical patent/JP3013206B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は,ニオブ酸リチウム単結
晶の製造方法に係り,液相エピタキシャル法によってニ
オブ酸リチウム単結晶を製造する方法に関するものであ
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a lithium niobate single crystal, and more particularly to a method for producing a lithium niobate single crystal by a liquid phase epitaxial method.

【0002】[0002]

【従来の技術】ニオブ酸リチウム(LiNbO3 )単結
晶は導波路型光スイッチ用基板材料としてその応用が期
待されている。この種の単結晶の製造法としてはチョク
ラルスキー法が一般的である。しかしながら,この方法
で得られる結晶組成はコングルエント(調和溶融)組成
で,Li/Nb=0.94となり,リチウムが不足して
いる。このことは導波路型光スイッチにおけるDCドリ
フト(駆動電圧の変動),光高調波発生時の光損傷閾値
低下の原因となると考えられる。そこで,Li/Nb=
1.0すなわちストイキオメトリー(化学量論)組成の
結晶を用いた特性改善が求められている。液相エピタキ
シャル法は,半導体結晶や磁性ガネーット等の製造に用
いられており単結晶の製造方法として低コストで,組成
制御が容易である等の利点を有している。液相エピタキ
シャル法による単結晶膜製造に際して,基板結晶と結晶
膜は同一の結晶構造を持ち,双方の格子定数に大きな差
のないことが要求される。ストイキオメトリー組成ニオ
ブ酸リチウム単結晶膜(格子定数a=5.150,c=
13.857 )製造に際しては,基板結晶としてコン
グルエント組成ニオブ組成酸リチウム単結晶(格子定数
a=5.149 ,c=13.865 )またはタンタ
ル酸リチウム単結晶(格子定数a=5.153 ,c=
13.785 )が用いられる。
2. Description of the Related Art Lithium niobate (LiNbO 3 ) single crystals are expected to be applied as substrate materials for waveguide type optical switches. The Czochralski method is generally used as a method for producing this type of single crystal. However, the crystal composition obtained by this method is a congruent (harmonic melting) composition, with Li / Nb = 0.94, and lithium is insufficient. This is considered to be a cause of DC drift (fluctuation of drive voltage) in the waveguide type optical switch and lowering of an optical damage threshold when an optical harmonic is generated. Therefore, Li / Nb =
There is a demand for improved properties using crystals having a 1.0 or stoichiometric (stoichiometric) composition. The liquid phase epitaxial method is used for manufacturing semiconductor crystals, magnetic ganates, and the like, and has advantages such as low cost and easy composition control as a single crystal manufacturing method. In the production of a single crystal film by the liquid phase epitaxial method, it is required that the substrate crystal and the crystal film have the same crystal structure, and that there is no large difference between the two lattice constants. Stoichiometric composition lithium niobate single crystal film (lattice constant a = 5.150, c =
13.857) At the time of production, a single crystal of lithium niobate having a congruent composition and a composition of niobium (a lattice constant a = 5.149, c = 13.865) or a single crystal of lithium tantalate (a lattice constant a = 5.153, c =
13.785) is used.

【0003】[0003]

【発明が解決しようとする課題】しかしながら,前者の
格子定数はこの結晶膜に対して大きく,後者のそれは逆
に小さい。この格子定数差はこの基板結晶とこの結晶膜
とに応力歪を生じるので結晶膜の割れを誘発する原因と
なる。そこで,本発明の技術的課題は,上記問題点を解
決し,良質の単結晶膜を得るため,該基板結晶と該結晶
膜の格子定数のミスマッチを小さくすることによって,
応力歪を低減する単結晶の製造方法を提供することにあ
る。
However, the lattice constant of the former is large for this crystal film, and the lattice constant of the latter is conversely small. This difference in lattice constant causes stress strain between the substrate crystal and the crystal film, and thus causes the crystal film to crack. In view of the above, the technical problem of the present invention is to solve the above problems and obtain a high quality single crystal film by reducing the mismatch between the lattice constant of the substrate crystal and the crystal film.
An object of the present invention is to provide a method for manufacturing a single crystal that reduces stress strain.

【0004】[0004]

【課題を解決するための手段】本考案は,ストイキオメ
トリー組成ニオブ酸リチウム単結晶膜の液相エピタキシ
ャル法による製造方法において,LiNb1-x Tax
3 (0<x<0.9)なる組成を有することを特徴とす
る。
SUMMARY OF THE INVENTION The present invention is the manufacturing method by the liquid phase epitaxial process of stoichiometric composition of lithium niobate single crystal film, LiNb 1-x Ta x O
3 (0 <x <0.9).

【0005】[0005]

【作用】本発明においては,ニオブ酸リチウム−タンタ
ル酸リチウム混晶単結晶を基板結晶として用いている。
この基板結晶は,xの増加に対してa軸格子定数が単調
増加し,c軸格子定数が単調減少する。したがって,基
板結晶と成長する結晶膜の格子定数のミスマッチを小さ
くすることができる。
In the present invention, a single crystal of lithium niobate-lithium tantalate mixed crystal is used as a substrate crystal.
In this substrate crystal, the a-axis lattice constant monotonically increases and the c-axis lattice constant monotonically decreases as x increases. Therefore, mismatch between the lattice constant of the substrate crystal and the crystal film to be grown can be reduced.

【0006】[0006]

【実施例】以下,本発明の実施例について比較例を参照
して説明する。 (実施例)図1は液相エピタキシャル法による単結晶育
成炉内の断面図である。図1に示すように,単結晶育成
炉は,白金るつぼ1,融液2,ニオブ酸リチウム−タン
タル酸リチウム混晶単結晶基板3,結晶ホルダー4,結
晶ホルダー支持棒5,抵抗加熱体6,及び結晶回転機構
7を備えている。この単結晶育成炉を用いて,白金るつ
ぼ1に保持された850℃の炭酸リチウム−五酸化ニオ
ブ−五酸化バナジウム系融液2にx=0.02,0.7
0,0.90なる組成のLiNb1-x Tax 3 結晶基
板3を60分間浸漬して,ストイキオメトリー組成ニオ
ブ酸リチウム単結晶膜を結晶基板3のc面上に育成し
た。同一組成基板について5回育成したところ,割れの
ない良質の単結晶膜が得られた。
Examples of the present invention will be described below with reference to comparative examples. (Embodiment) FIG. 1 is a sectional view showing the inside of a single crystal growing furnace by a liquid phase epitaxial method. As shown in FIG. 1, the single crystal growing furnace comprises a platinum crucible 1, a melt 2, a single crystal substrate of a mixed crystal of lithium niobate-lithium tantalate 3, a crystal holder 4, a crystal holder support rod 5, a resistance heater 6, And a crystal rotation mechanism 7. Using this single crystal growing furnace, x = 0.02, 0.7 in a lithium carbonate-niobium pentoxide-vanadium pentoxide-based melt 2 held at 850 ° C. in a platinum crucible 1.
0,0.90 the LiNb 1-x Ta x O 3 crystal substrate 3 having the composition formed by dipping for 60 minutes, was grown stoichiometric composition of lithium niobate single crystal film on the c-plane of the crystal substrate 3. When the substrate of the same composition was grown five times, a high quality single crystal film without cracks was obtained.

【0007】(比較例)図1で示すものと同様な装置
に,白金るつぼ1に保持された摂氏850度の炭酸リチ
ウム−五酸化ニオブ−五酸化バナジウム系融液2にタン
タル酸リチウム結晶基板3を60分間浸漬して,ストイ
キオメトリー組成ニオブ酸リチウム単結晶膜をx=0,
0.95,1.0なる組成のLiNb1-x Tax 3
晶基板3のc面上に育成した。同一組成基板について5
回育成したところ,この単結晶膜に割れを生じ,良質の
単結晶膜を得ることは不可能であった。本発明の実施例
および比較例による育成結果を表1に示す(尚,格子定
数の値は,J.CrystalGroth,vol.33,(1976)p199.参
照)。表1の○印は結晶に割れを生じなかったもの,×
印は割れを生じたものを示す。
COMPARATIVE EXAMPLE A lithium tantalate crystal substrate 3 was placed on a lithium carbonate-niobium pentoxide-vanadium pentoxide-based melt 2 at 850 ° C. held in a platinum crucible 1 by a device similar to that shown in FIG. Is immersed for 60 minutes to form a stoichiometric composition lithium niobate single crystal film at x = 0,
0.95,1.0 composed composition LiNb 1-x Ta x O 3 was grown on the c-plane of the crystal substrate 3. 5 for substrates of the same composition
After multiple growth, the single crystal film was cracked, and it was impossible to obtain a good quality single crystal film. Table 1 shows the growth results of Examples and Comparative Examples of the present invention (for the values of lattice constants, see J. Crystal Groth, vol. 33, (1976) p199.). The circles in Table 1 indicate that the crystal did not crack,
The marks indicate those having cracks.

【0008】[0008]

【表1】 [Table 1]

【0009】尚,前述した実施例のみならず,本発明
は,LiNb1-x Tax 3 (0<x<0.9)なる組
成を有するニオブ酸リチウム−タンタル酸リチウム混晶
単結晶を用いるものであるならば,所望の組成を有する
ニオブ酸リチウム単結晶膜の製造方法全般に適用される
ものである。
[0009] Incidentally, not only the embodiments described above, the present invention is, LiNb 1-x Ta x O 3 (0 <x <0.9) composed of lithium niobate having a composition - lithium tantalate mixed single crystal If it is used, it can be applied to all methods for producing a lithium niobate single crystal film having a desired composition.

【0010】[0010]

【発明の効果】以上説明した如く,本発明を用いること
により液相エピタキシャル法で所望の組成を有するニオ
ブ酸リチウム単結晶膜の製造を行う際の成長した単結晶
膜の割れを防止することが可能となるため,工業的利用
価値は大である。
As described above, by using the present invention, it is possible to prevent cracking of a grown single crystal film during production of a lithium niobate single crystal film having a desired composition by a liquid phase epitaxial method. The industrial use value is great because it becomes possible.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明による実施例で,育成炉内に白金るつぼ
に保持された融液及び基板結晶を挿入した断面図であ
る。
FIG. 1 is a cross-sectional view of a growth furnace in which a melt and a substrate crystal held in a platinum crucible are inserted into a growth furnace.

【符号の説明】[Explanation of symbols]

1 白金るつぼ 2 結晶原料 3 結晶基板 4 結晶ホルダー 5 結晶ホルター支持棒 6 抵抗加熱体 DESCRIPTION OF SYMBOLS 1 Platinum crucible 2 Crystal raw material 3 Crystal substrate 4 Crystal holder 5 Crystal holter support rod 6 Resistance heating element

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 液相エピタキシャル法によるニオブ酸リ
チウム単結晶を製造する方法において,基板結晶として
LiNb1-x Tax 3 (0<x<0.9)なる組成を
有するニオブ酸リチウム−タンタル酸リチウム混晶単結
晶を用いることを特徴とするニオブ酸リチウム単結晶の
製造方法。
1. A method for producing a lithium niobate single crystal by liquid phase epitaxial method, LiNb 1-x Ta x O 3 lithium niobate having a (0 <x <0.9) having a composition as the substrate crystal - Tantalum A method for producing a lithium niobate single crystal, comprising using a lithium oxide mixed crystal single crystal.
JP3244077A 1991-08-30 1991-08-30 Method for producing lithium niobate single crystal Expired - Fee Related JP3013206B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3244077A JP3013206B2 (en) 1991-08-30 1991-08-30 Method for producing lithium niobate single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3244077A JP3013206B2 (en) 1991-08-30 1991-08-30 Method for producing lithium niobate single crystal

Publications (2)

Publication Number Publication Date
JPH0558792A JPH0558792A (en) 1993-03-09
JP3013206B2 true JP3013206B2 (en) 2000-02-28

Family

ID=17113396

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3244077A Expired - Fee Related JP3013206B2 (en) 1991-08-30 1991-08-30 Method for producing lithium niobate single crystal

Country Status (1)

Country Link
JP (1) JP3013206B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006143550A (en) * 2004-11-24 2006-06-08 Fdk Corp Electrooptic thin film element

Also Published As

Publication number Publication date
JPH0558792A (en) 1993-03-09

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